Utility model content
In order to overcome problem above, the utility model aims to provide a kind of film antenna, is passed by nano-antenna to improve
System antenna structure, expand the application of antenna.
In order to achieve the above object, the utility model provides a kind of film antenna, and it includes:
One dielectric substrate layers;
Metal interconnecting wires in dielectric substrate layers, for being transmitted to the signal of nano-antenna layer;
Positioned at the nano-antenna layer of dielectric substrate layer surface;Wherein, nano-antenna layer bottom passes through metal contact line and gold
Belong to interconnection line connection;
Medium between nano-antenna layer;
Coating on nano-antenna layer.
Preferably, the nano-antenna in the nano-antenna layer has a constant pattern antenna and multiple constant with this
The changing patterns antenna that pattern antenna zooms in or out.
Preferably, on the basis of the constant pattern antenna, the constant pattern antenna is put by increasing or decreasing order
Greatly multiple changing patterns antennas, by multiple changing patterns antennas according to size from small to large order and by hanging to same
Arranged on straight line.
Preferably, the top of adjacent changing patterns antenna is on the same line and in adjacent changing patterns antenna
One changing patterns antenna is oppositely arranged with another changing patterns antenna in 180 °.
Preferably, the curved track arrangement of the constant pattern antenna.
Preferably, the constant pattern antenna is wave and using arc as trajectory alignment.
Preferably, the arc is semicircle.
Preferably, one end bottom of the every nano-antenna at the top of the metal contact line with being connected.
Preferably, the metal contact line is made up of metal contact hole structure;Metal contact hole structure is formed at insulation lining
In bottom, its one end is connected with nano-antenna layer bottom, and the other end is connected through dielectric substrate layers with metal interconnecting wires.
Preferably, the line width of the metal interconnecting wires is identical with the diameter of the metal contact line.
Preferably, the material of the metal interconnecting wires is copper, and the material of the metal contact line is copper.
Preferably, closed cavity is provided with the nano-antenna layer bottom, and closed cavity is located at metal interconnection
In dielectric substrate layers between line and the nano-antenna layer.
Preferably, at least one medium beam is provided with the top of closed cavity and in nano-antenna layer bottom, for supporting
Nano-antenna layer.
Preferably, one end bottom of the nano-antenna contacts the position of linear contact lay with metal and may be contained within nano-antenna layer
Side, at least one medium beam is arranged at another side bottom of the nano-antenna layer.
Preferably, the closed cavity is in flat structure.
Preferably, one end of the every metal contact line is connected with the end of corresponding antenna, and the other end is described in
Closed cavity is into dielectric substrate layers, and the other end is connected with metal interconnecting wires.
Preferably, the material of the nano-antenna layer is single-layer graphene film.
Preferably, the material of the dielectric substrate layers is organic shielding material.
Preferably, the material of the coating is graphene oxide film.
Preferably, the material of the medium is air or low-loss high-frequency medium.
In order to achieve the above object, the utility model additionally provides a kind of preparation method of above-mentioned film antenna, including:
Step 01:One original dielectric substrate layers are provided;
Step 02:Go out to interconnect line trenches in original dielectric substrate layers surface etch and fill metal, so as to form interconnection line;
Step 03:In interconnection line and the redeposited one layer of new dielectric substrate layers of original dielectric substrate layer surface, served as a contrast in new insulation
Contact hole is etched in bottom;And metal is filled in the contact hole, so as to form metal contact line;Contact hole position is
The end position of relevant nanometer antenna;
Step 04:Metal contact line top and new dielectric substrate layers overlying lid last layer nano-antenna layer;
Step 05:Nano-antenna layer is patterned, forms multiple nano-antennas, and expose new dielectric substrate layer surface;
Wherein, one end of each nano-antenna in nano-antenna layer and metal contact line top contact;
Step 06:Medium is formed between nano-antenna, and coating is covered on nano-antenna surface.
Preferably, the step 06 includes:Coating is covered in nano-antenna layer surface in a vacuum, so that covering
Vacuum medium is formed between adjacent nano antenna below cap rock.
Preferably, the step 06 includes:First, deposit and be situated between in nano-antenna layer and the new dielectric substrate layer surface of exposure
Matter layer;Dielectric layer is spaced apart by nano-antenna;Then, the dielectric layer positioned at nano-antenna layer surface is removed, retains to be located at and receives
Dielectric layer between rice antenna;Then, coating is formed in dielectric layer surface and nano-antenna layer surface;Finally, to coating
Pressurized treatments are carried out, make coating and dielectric layer adsorbed close.
Preferably, the top of the dielectric layer is higher than the top of described nano-antenna layer.
Preferably, in the step 03, the deposition of the new dielectric substrate layers specifically includes:First, in interconnection line and original
Beginning dielectric substrate layer surface deposits the first new dielectric substrate layers;Then, first groove is etched in new dielectric substrate layers;Exist again
Filling sacrificial layer material in first groove;After the step 05 and before the step 06, in addition to:Remove sacrifice layer material
Material, makes to form cavity between nano-antenna layer and the first new dielectric substrate layers;In the step 06, covered on nano-antenna surface
After coating, the cavity forms closed cavity.
Preferably, after sacrificial layer material filling, and before step 04, in addition to:
Step 041:At least one long and narrow second groove is etched in sacrificial layer material;
Step 042:In second groove and the first new dielectric substrate layer surface deposits the second new dielectric substrate layers, and first is new
Mutually it is bonded between dielectric substrate layers and the second new dielectric substrate layers;Wherein, the both ends of second groove and the first new dielectric substrate layers
Connection;
Step 043:The second new dielectric substrate layers are patterned, wherein, remove the second new dielectric substrate outside second groove
Layer so that the second new dielectric substrate layers in second groove form the engraved structure connected with the first new dielectric substrate layers;
After the removal sacrificial layer material, the second new dielectric substrate layers in the second groove retain, and form medium
Beam, for supporting nano-antenna layer.
Preferably, at least two second groove cross arrangements.
Preferably, second groove is distributed in non-rectilinear.
Film antenna of the present utility model, nano-antenna and metal interconnecting wires are formed integral with one another, and realize nano-antenna layer
Thin-film state.Further, using nano-antenna size it is small and it is spatially integrate degree it is high the characteristics of, it is possible to achieve multiple nano-antennas
One layer of shared nano-antenna layer;Using the conversion and arrangement of constant pattern antenna and changing patterns antenna, different frequency range is realized
Antenna is integrated in one layer;Further, to the setting of the metal contact line of nano-antenna bottom so that film antenna is integrally tied
The longitudinal direction height of structure reduces;In addition, the setting of closed cavity, the signal utilization rate of nano-antenna layer is improved;Medium beam coordinates
The setting of closed cavity, the volume of closed cavity is not only improved, also improves and is advantageous to the integrated of more multiband aerial.This practicality is new
Film antenna of type and preparation method thereof, can be mutually compatible with existing CMOC techniques, without extra increase cost, is advantageous to
Large-scale production.
Embodiment
To make content of the present utility model more clear understandable, below in conjunction with Figure of description, to of the present utility model interior
Appearance is described further.Certain the utility model is not limited to the specific embodiment, known to those skilled in the art
General replacement be also covered by the scope of protection of the utility model.
Film antenna of the present utility model, including dielectric substrate layers;Metal interconnecting wires in dielectric substrate layers, are used for
The signal of nano-antenna layer is transmitted;Positioned at the nano-antenna layer of dielectric substrate layer surface;Wherein, nano-antenna layer bottom
It is connected by metal contact line with metal interconnecting wires;Medium between nano-antenna layer;Covering on nano-antenna layer
Cap rock.
Below in conjunction with accompanying drawing 1~24 and specific embodiment to there is two layers of antenna in one embodiment of the present utility model
The antenna structure of unit and two layers of anti-crosstalk dielectric layer is described in further detail.It should be noted that accompanying drawing is using very simple
The form of change, using non-accurately ratio, and only to it is convenient, clearly reach and aid in illustrating the purpose of the present embodiment.
Refer to Fig. 1 and 2, the film antenna of the present embodiment, including:Dielectric substrate layers 00;In dielectric substrate layers 00
Metal interconnecting wires 01, for being transmitted to the signal of nano-antenna layer 02;Positioned at the nanometer day on the surface of dielectric substrate layers 00
Line layer 02;Wherein, the bottom of nano-antenna layer 02 is connected by metal contact line 04 with metal interconnecting wires 01;Positioned at nano-antenna layer
Medium between 02;Coating 03 on nano-antenna layer 02.It is used to support nano-antenna layer using dielectric substrate layers 00
02 and the short circuit of isolation nano-antenna layer 02 and extraneous other functional structures.Metal interconnecting wires are integrated with dielectric substrate layers 00
01 and metal contact line 04 be used for the signal transmission of realizing nano-antenna layer 02, and saved space, simplified structure, realized
Nano-antenna it is integrated.Medium (medium shown in Fig. 2 is air) is set between nano-antenna layer 02, can not only be used
Interference between nano-antenna is isolated, the signal intensity of nano-antenna can also be strengthened.Other embodiments of the present utility model
In, the medium set between nano-antenna can also be low-loss high-frequency medium 06, as shown in Figure 3.
Refer to Fig. 1 and combine Fig. 2, the nano-antenna in nano-antenna layer 02 has a constant pattern antenna and multiple
The changing patterns antenna for being amplified with this constant pattern antenna and/or being reduced.In the present embodiment, as shown in figure 1, constant pattern day
Line can be any one arc shown in Fig. 1, preferably, arc is semicircle, or less than 1/2 circle.Referring to Fig. 1, with
On the basis of constant pattern antenna, constant pattern antenna is enlarged into multiple changing patterns antennas by increasing or decreasing order, will be more
Individual changing patterns antenna will arrange sequentially and on hanging to same straight line from small to large according to size.Adjacent changing patterns
A changing patterns antenna of the top of antenna on the same line and in adjacent changing patterns antenna and another Transformation Graphs
Case antenna is oppositely arranged in 180 °.In addition, in other embodiments of the present utility model, constant pattern antenna can also be wave
And using arc as trajectory alignment.
In the present embodiment, one end bottom of every nano-antenna at the top of metal contact line with being connected.Incorporated by reference to Fig. 1~3,
For the ease of expression in Fig. 1, nano-antenna, dielectric substrate layers 00, cavity Q and medium beam 05 are merely illustrated, but this is not used in limit
The scope of protection of the utility model processed.White circle positional representation nano-antenna contacts an end position of linear contact lay with metal in Fig. 1, real
The white circle position for the ease of representing, is shown in nano-antenna in nano-antenna bottom on border., please in the present embodiment
Refering to Fig. 2 and 3, metal contact line 04 is made up of metal contact hole structure;Metal contact hole structure is formed at dielectric substrate layers 00
In, its one end is connected with the bottom of nano-antenna layer 02, and the other end is connected through dielectric substrate layers 00 with metal interconnecting wires 01.In order to
Reduce loss of signal, the line width of the metal interconnecting wires 01 of the present embodiment is identical with the diameter of metal contact line 04, preferably, can be with
The diameter of metal contact line 04 is set to be not more than 10nm, interference effect of the so small metal contact line 04 to nano-antenna
It is smaller, it can almost ignore.Preferably, the material of the metal interconnecting wires 01 of the present embodiment can be copper, metal contact line 04
Material can be copper.
As shown in Figures 2 and 3, in the present embodiment, the bottom of nano-antenna layer 01 is provided with closed cavity Q, and closed cavity Q
In dielectric substrate layers 00 between metal interconnecting wires 04 and nano-antenna layer 02.One end of every metal contact line 04 and phase
The one end for the nano-antenna answered is connected, and the other end passes through closed cavity Q into dielectric substrate layers 00, and the other end and metal are mutual
Line 01 is connected.The closed cavity Q of the present embodiment is in flat structure, preferably, closed cavity Q height is not more than nanometer day
Two times of the thickness of line layer 02, closed cavity Q area is not less than the 90% of the area of nano-antenna layer 02, the closing of flat structure
Equivalent to one layer dielectric film of cavity Q, buffer action can be played, reduce longitudinal direction height, be advantageous to the thin of whole antenna structure
Membranization.
In the present embodiment, referring to Fig. 1, being provided with least one at the top of closed cavity Q and in the bottom of nano-antenna layer 02
Bar medium beam 05, for supporting nano-antenna layer 02.Fig. 4~7 are referred to, are the film antenna in embodiment of the present utility model
Medium beam schematic diagram.Referring to Fig. 4, one end bottom of nano-antenna may be contained within the position that metal contact line 04 contacts
The side of nano-antenna layer 02, at least one medium beam 05 are arranged at another side bottom of nano-antenna layer 02, further, it is also possible to
An at least medium beam 05 is set in the central axis zone of nano-antenna layer 02, as shown in Figure 5.Other embodiments of the present utility model
In, two medium beam cross-distributions, can also be with nano-antenna layer 02 such as dotted line position in Fig. 5 below nano-antenna layer
Mandrel is the medium beam 05 that symmetry axis is symmetrical arranged at least two intersections.In other embodiments of the present utility model, figure is referred to
6, can also be only with a medium beam 05, the both ends of this root medium beam 05 connect dielectric substrate layers 00 respectively, dotted line table in Fig. 6
Show that the medium beam 05 is arranged for non-rectilinear, such as can be S types, or it is Z-shaped, as shown in fig. 7, using one for nano-antenna layer bottom
The schematic diagram of root medium beam 05, the medium beam 05 is Z-shaped, and S types can use identical position with the Z-type, simply by wedge angle
Corners, straight line varied curve.Therefore, the medium beam that the conversion for any conventional technical means of the present embodiment obtains,
Belong in thought range of the present utility model.It should be noted that medium beam 05 and the material of dielectric substrate layers 00 can phases
Together.
In addition, in the present embodiment, in order to realize the filming of whole antenna structure and flexibility so that antenna film can appoint
Meaning deformation, is advantageously applied in intelligent device, the material of nano-antenna layer 02 can be single-layer graphene film;Dielectric substrate
The material of layer 00 can be organic shielding material or inorganic mask material, and the material of coating 03 can be that graphene oxide is thin
Film.Therefore, the antenna structure of the present embodiment is actually the film of one layer of Nano grade, the definition of the Nano grade be no more than
1000nm.In addition, the non-interfering stacked film antenna of multilayer can also be set using this antenna structure, be advantageous to multimode multi-frequency
The realization of section.
In addition, additionally providing a kind of preparation method of the above-mentioned film antenna of the present embodiment in the present embodiment, figure is referred to
8, it includes:
Step 01:Referring to Fig. 9, provide an original dielectric substrate layers 00';
Specifically, original dielectric substrate layers 00' material can be organic shielding material or inorganic mask material.
Step 02:Referring to Fig. 10, go out to interconnect line trenches in original dielectric substrate layers 00' surface etch and fill metal,
So as to form interconnection line 01;
Specifically, can be, but not limited to using photoetching and etching technics come prepare interconnection line trenches and using electroplating technology come
Metal is filled, metal can be copper.In addition, the organic material or inorganic material that can develop when original dielectric substrate layers 00' uses
During material, interconnection line trenches directly can be prepared in original dielectric substrate layers 00' using photoetching process.
Step 03:Figure 11~17 are referred to, it is new exhausted in redeposited one layer of interconnection line 01 and original dielectric substrate layers 00' surfaces
Edge substrate layer 00 ", contact hole is etched in new dielectric substrate layers 00 ";And metal is filled in the contact hole, so as to form gold
Belong to contact line 04;Contact hole position is the end position of relevant nanometer antenna, as shown in Fig. 1 and Fig. 4~7;
Specifically, in this step 03, the deposition of new dielectric substrate layers 00 " specifically includes:
Figure 11 is referred to, first, the first new dielectric substrate layers are deposited in interconnection line 01 and original dielectric substrate layers 00' surfaces
00”;
Figure 12 is referred to, then, first groove is etched in new dielectric substrate layers 00 ";Figure 13 is referred to, then first
Filling sacrificial layer material X in groove.Then, Figure 14 is referred to, then carries out the preparation of contact hole, including:In new dielectric substrate layers
Contact hole is etched in 00 " neutralization sacrificial layer material X, contact hole bottom-exposed goes out interconnection line 01;And fill in the contact hole
Metal, so as to form metal contact line 04, metal contact line 04 is connected with interconnection line 01.Explanation is needed exist for, is sacrificed
Layer material X size determines follow-up cavity Q size.
In step 03 in the present embodiment, after sacrificial layer material X fillings, in addition to:
Step 041:Figure 15 is referred to, at least one long and narrow second groove is etched in sacrificial layer material X, and (this second
The pattern of groove and position may be referred to Fig. 1 and the medium beam 05 of Fig. 4~7, after being formed in second groove after filled media
Continuous medium beam 05);
Step 042:Figure 16 is referred to, in second groove and the first new surface of dielectric substrate layers 00 " deposition second is new absolutely
Edge substrate layer 00 " ', the first new dielectric substrate layers 00 " and the second new dielectric substrate layers 00 " ' between be mutually bonded;Wherein, the second ditch
The both ends of groove connect with the first new dielectric substrate layers 00 ";
Step 042:Refer to Figure 17, the second new dielectric substrate layers 00 " of patterning ', wherein, remove outside second groove
Second new dielectric substrate layers 00 " ' so that the second new dielectric substrate layers 00 " ' in second groove and the first new dielectric substrate layers
The engraved structure of 00 " formation connection, and the second new dielectric substrate layers 00 " in second groove ' form final medium beam 05;
Here, referring to Fig. 4, when one end bottom of nano-antenna may be contained within nanometer day with the position that metal contact line 04 contacts
The side of line layer 02, at least one second groove (position of medium beam 05) are arranged at another side bottom of nano-antenna layer 02;
Or referring to Fig. 5, at least two second groove (position of medium beam 05) cross arrangements;Or referring to Fig. 6, second groove
(position of medium beam 05) is distributed in non-rectilinear, such as S-type distribution, or Z-shaped distribution (medium beam 05 as shown in Figure 7
Position).
It should be noted that original dielectric substrate layers 00, the first new dielectric substrate layers 00 ", the second new dielectric substrate layers
00 " ' collectively forms the dielectric substrate layers 00 in the above-mentioned film antenna structure of the present embodiment.
Step 04:Refer to Figure 18, the top of metal contact line 04 and the new overlying of dielectric substrate layers 00 " lid last layer nanometer day
Line layer 04;
Specifically, due to being also prepared for medium beam 05 in the present embodiment in above-mentioned steps 03, therefore, in this step 04,
Nano-antenna layer 04 is also covered on medium beam 05 simultaneously.In the present embodiment, the material of nano-antenna layer can be mono-layer graphite
Alkene film;Then the preparation process of the nano-antenna layer 04 of single-layer graphene film includes:Prepared using chemical gaseous phase depositing process
Single-layer graphene film;Single-layer graphene film is transferred on the top of metal contact line 04 and new dielectric substrate layers 00 ", and
On the medium beam 05 of the present embodiment.
Step 05:Figure 19 is referred to, patterning nano-antenna layer 02, forms multiple nano-antennas, and is exposed new exhausted
The surface of edge substrate layer 00 ";Wherein, one end of each nano-antenna in nano-antenna layer 02 connects with the top of metal contact line 04
Touch;
In the present embodiment, after step 05 and before step 06, in addition to:Figure 20 is referred to, removes sacrifice layer material
Expect X, make to form cavity Q between 02 and first new dielectric substrate layers 00 " of nano-antenna layer;
Here, after removing sacrificial layer material X, the second new dielectric substrate layers in second groove retain, and form medium beam
05, for supporting nano-antenna layer 02.
Step 06:Figure 21 and Figure 22~24 are referred to, medium is formed between nano-antenna, and cover on nano-antenna surface
Lid coating 03.
Specifically, for the antenna film shown in Fig. 2, the medium used is air, then this step 06 can use as follows
Mode is realized:Figure 21 is referred to, in a vacuum, mechanical transfer technique is can be, but not limited to and coating 03 is deposited on nano-antenna
02 surface of layer, so that forming vacuum medium between the adjacent nano antenna of the lower section of coating 03.It should be noted that due to
Spacing between the nano-antenna of the present embodiment is very small, generally less than 10nm, and the coating 03 used is graphene oxide
Film, directly the graphene oxide film prepared can be covered on nano-antenna layer 02, and consider conjugation, can be with
Heat is applied to nano-antenna layer and graphene oxide film interface, makes the two interface bond, realizes firmly connection.
In addition, for the antenna film shown in Fig. 3, the medium used is situated between for low-loss high-frequency medium or other low-losses
Matter, this step 06 can also be realized in the following way:
First, Figure 22 is referred to, in nano-antenna layer 02 and the new surface of the dielectric substrate layers 00 " metallization medium layer of exposure
06;Dielectric layer 06 is spaced apart by nano-antenna;Here it is possible to but it is not limited to use gas-phase deposition or ald work
Skill carrys out metallization medium layer 06.It should be noted that the top of dielectric layer 06 can be higher than the top of nano-antenna layer 02.
Then, refer to Figure 23, remove the dielectric layer 06 positioned at the surface of nano-antenna layer 02, retain positioned at nano-antenna it
Between dielectric layer 06;Here it is possible to but it is not limited to use photoresist using plasma dry etch process etches again for mask
Remove the dielectric layer 06 positioned at the surface of nano-antenna layer 02.Then, Figure 23 is referred to, on the surface of dielectric layer 06 and nano-antenna layer
Surface forms coating;Finally, pressurized treatments are carried out to coating, makes coating and dielectric layer adsorbed close.Here, it is necessary to note
Anticipate, the top of the dielectric layer 06 after etching can still be higher than the top of nano-antenna layer 02, can so reduce nanometer day
Crosstalk between line layer, the top of the dielectric layer 06 in the antenna film finally prepared in the present embodiment are higher than nano-antenna layer 02
Top.
Finally, Figure 24 is referred to, one layer of coating 03 is covered on dielectric layer 06, coating 03 will seal at the top of cavity Q,
Form closed cavity.
Although the utility model is disclosed as above with preferred embodiment, the right embodiment is illustrated only for the purposes of explanation
, the utility model is not limited to, those skilled in the art is not before the spirit and scope of the utility model is departed from
Some change and retouching can be made by putting, and the protection domain that the utility model is advocated should be to be defined described in claims.