CN206799790U - Single crystal growing furnace - Google Patents
Single crystal growing furnace Download PDFInfo
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- CN206799790U CN206799790U CN201620720001.8U CN201620720001U CN206799790U CN 206799790 U CN206799790 U CN 206799790U CN 201620720001 U CN201620720001 U CN 201620720001U CN 206799790 U CN206799790 U CN 206799790U
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- heater
- graphite crucible
- crucible
- single crystal
- crystal growing
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Abstract
The utility model discloses a kind of single crystal growing furnace that can improve production efficiency.The single crystal growing furnace includes body of heater, the furnace interior is provided with graphite crucible, the graphite crucible bottom is mutually fixed by crucible axis with bottom of furnace body, silica crucible is provided with the graphite crucible, side heater is provided with the outside of graphite crucible, aspirating hole is provided with the sidewall of the furnace body, the bottom of the graphite crucible is provided with bottom heater, and the bottom heater and side heater are integral type structure.By setting bottom heater in the bottom of graphite crucible, the thawing of polycrystalline silicon raw material can be accelerated, shorten the thawing time of raw material, production efficiency can be greatly improved, meanwhile using bottom heater temperature-compensating can be carried out to graphite crucible bottom, avoid graphite crucible bottom temp is relatively low from causing boule growth speed slow, for the ease of installation and removal, the bottom heater and side heater are integral type structure.It is adapted in monocrystalline production equipment field popularization and application.
Description
Technical field
Monocrystalline production equipment field is the utility model is related to, especially a kind of single crystal growing furnace.
Background technology
21 century, world energy sources crisis promote the development of photovoltaic market, and crystal silicon solar energy battery is photovoltaic industry
Leading products.With further attention of the countries in the world to solar photovoltaic industry, particularly developed country has formulated a series of
Support policy, encourage utilization solar energy, in addition, with the continuous expansion of silicon solar cell application surface, solar-electricity
The demand in pond is increasing, and the demand of silicon single crystal material is also just increasing.
Monocrystalline silicon is a kind of semi-conducting material, is generally used for manufacturing integrated circuit and other electronic components, monocrystalline silicon growing
Technology has two kinds：One kind is zone-melting process, and another kind is vertical pulling method, and wherein vertical pulling method is the method generally used at present.
The method of monocrystalline growth with czochralski silicon is as follows：The polycrystalline silicon raw material of high-purity is put into the silica crucible of single crystal growing furnace
It is interior, fusing is then heated under the protection of low vacuum and inert gas, the monocrystalline silicon for having a particular growth direction (
It is called seed crystal) it is fitted into seed crystal clamping device, and seed crystal is contacted with silicon solution, the temperature of molten silicon solution is adjusted, connects it
Nearly melting temperature, seed crystal is stretched into from top to bottom in the silicon solution of melting and rotate, then slowly upper lifting seed is brilliant, now,
Monocrystalline silicon enters the growth of conical section, when the diameter of cone is close to aimed dia, improves the lifting speed of seed crystal, makes monocrystalline
Silicon body diameter no longer increases into the middle part growth phase of crystal, in monocrystalline silicon body growth at the end of, then improves seed crystal
Lifting speed, monocrystalline silicon body progressively disengages molten silicon, forms lower cone and terminate to grow.The list to grow out in this way
Crystal silicon, it is shaped as two sections of tapered cylinders, the cylinder is cut into slices, that is, obtains single-crystal semiconductor raw material, this circle
Shape monocrystalline silicon piece can serve as the material of integrated circuit or solar cell.
Pulling single crystal silicon is carried out typically in single crystal growing furnace, and at present, used single crystal growing furnace includes body of heater, the furnace interior
Provided with graphite crucible, the graphite crucible bottom is mutually fixed by crucible axis with bottom of furnace body, and stone is provided with the graphite crucible
English crucible, graphite crucible outside are provided with side heater, and the bottom of furnace body sets aspirating hole, in addition to tunger tube, described
Tunger tube is extend into silica crucible through body of heater, and it is in order to avoid crystal bar is in crystal pulling growth course that argon gas is passed through in single crystal growing furnace
In be oxidized.Existing single crystal growing furnace is only provided with side heater on the outside of graphite crucible, and graphite crucible bottom does not have heating to set
It is standby, so need longer time to be melted when by the thawing of polycrystalline silicon raw material so that and production efficiency is relatively low, and
Because aspirating hole is located at below graphite crucible, the temperature of graphite crucible bottom can be caused relatively low so that the temperature of graphite crucible bottom
Degree is larger with the temperature difference at other positions, and it is slow to easily cause boule growth speed.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of single crystal growing furnace that can improve production efficiency.
Technical scheme is used by the utility model solves its technical problem：The single crystal growing furnace, including body of heater, the body of heater
Inside is provided with graphite crucible, and the graphite crucible bottom is mutually fixed with bottom of furnace body by crucible axis, set in the graphite crucible
There is silica crucible, be provided with side heater on the outside of graphite crucible, aspirating hole, in addition to argon gas are provided with the sidewall of the furnace body
Pipe and argon gas source, the argon gas source are connected with tunger tube by air inlet pipe, and the end of the tunger tube extend into stone through body of heater
In English crucible, the bottom of the graphite crucible is provided with bottom heater, and the bottom heater is integrated with side heater
Formula structure.
It is further that gas preheating unit is provided with the air inlet pipe, the gas preheating unit includes closed
Cavity, is provided with heat exchanger tube in the cavity, and it is outer and connected with air inlet pipe, institute that the both ends of the heat exchanger tube extend respectively to cavity
State the argon gas in argon gas source to flow into crucible along air inlet pipe, heat exchanger tube, tunger tube successively, the junction of the heat exchanger tube and cavity
Sealing, air entraining pipe and blast pipe are connected with the cavity, one end of the air entraining pipe connects with the aspirating hole set on body of heater,
The other end of air entraining pipe is connected with cavity inside, and aspiration pump is provided with the air entraining pipe, and the blast pipe connects with cavity inside
It is logical.
It is further that the heat exchanger tube is metal coil pipe.
It is further that the heat exchanger tube is made using copper pipe.
It is further that heat-preservation cylinder is provided with the body of heater, graphite crucible, silica crucible, side heater, bottom add
Hot device is respectively positioned in heat-preservation cylinder.
It is further to be provided with insulation quilt between the body of heater and heat-preservation cylinder.
It is further that heat radiation reflecting layer is scribbled on the inwall of the heat-preservation cylinder.
The beneficial effects of the utility model are：By setting bottom heater in the bottom of graphite crucible, can accelerate more
The thawing of crystal silicon raw material, shorten the thawing time of raw material, production efficiency can be greatly improved, simultaneously as aspirating hole is located at stone
Below black crucible, the temperature of graphite crucible bottom can be caused relatively low, graphite crucible bottom can be carried out using bottom heater
Temperature-compensating, avoid graphite crucible bottom temp is relatively low from causing boule growth speed slow, it is described for the ease of installation and removal
Bottom heater 11 and side heater 5 are integral type structure.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model single crystal growing furnace；
In figure mark for：Body of heater 1, graphite crucible 2, crucible axis 3, silica crucible 4, side heater 5, aspirating hole 6, argon gas
Pipe 7, bottom heater 11, heat-preservation cylinder 12, insulation quilt 13, air inlet pipe 14, argon gas source 15, gas preheating unit 16, cavity 161,
Heat exchanger tube 162, air entraining pipe 163, blast pipe 164, aspiration pump 165, heat radiation reflecting layer 17.
Embodiment
The utility model is further illustrated below in conjunction with the accompanying drawings.
As shown in figure 1, the single crystal growing furnace, including body of heater 1, the inside of body of heater 1 are provided with graphite crucible 2, the graphite crucible 2
Bottom is mutually fixed by crucible axis 3 and the bottom of body of heater 1, and silica crucible 4 is provided with the graphite crucible 2, and the outside of graphite crucible 2 is set
Side heater 5 is equipped with, aspirating hole 6, in addition to tunger tube 7 and argon gas source 15, the argon gas are provided with the side wall of body of heater 1
Source 15 is connected with tunger tube 7 by air inlet pipe 14, and the end of the tunger tube 7 is extend into silica crucible 4 through body of heater 1, institute
The bottom for stating graphite crucible 2 is provided with bottom heater 11, and the bottom heater 11 and side heater 5 are integral type knot
Structure.It is to accelerate the thawing of polycrystalline silicon raw material that bottom heater 11 is set in the bottom of graphite crucible 2, shortens the thawing of raw material
Time, production efficiency can be greatly improved, simultaneously as aspirating hole 6 is located at the lower section of graphite crucible 2, the bottom of graphite crucible 2 can be caused
The temperature in portion is relatively low, can carry out temperature-compensating to the bottom of graphite crucible 2 using bottom heater 11, avoid the bottom of graphite crucible 2
Portion's temperature is relatively low to cause boule growth speed slow, and for the ease of installation and removal, the bottom heater 11 heats with sidepiece
Device 5 is integral type structure.
Gas preheating unit 16 is provided with the air inlet pipe 14, the gas preheating unit 16 includes closed cavity
161, it is provided with heat exchanger tube 162 in the cavity 161, it is outer and with entering that the both ends of the heat exchanger tube 162 extend respectively to cavity 161
Tracheae 14 is connected, and the argon gas in the argon gas source 15 is flowed into crucible 6 along air inlet pipe 14, heat exchanger tube 162, air inlet pipe 14 successively,
The junction of the heat exchanger tube 162 and cavity 161 is sealed, and air entraining pipe 163 and blast pipe 164, institute are connected with the cavity 161
The one end for stating air entraining pipe 163 connects with the aspirating hole 2 set on body of heater 1, and the other end of air entraining pipe 163 inside cavity 161 with connecting
It is logical, aspiration pump 165 is provided with the air entraining pipe 163, the blast pipe 164 connects with the inside of cavity 161.By in air inlet pipe
Gas preheating unit 16 is set on 14, and gas preheating unit 16 can heat to entering the argon gas in body of heater 1, avoid temperature
Relatively low argon gas enters in body of heater 1 causes large effect to the temperature in body of heater 1, in the process of polycrystalline silicon ingot or purifying furnace work
In, it is ensured that the temperature in body of heater 1 is maintained in a stable scope, and the Ingot quality for ensureing finally to grow up to reaches higher
Quality level, in addition, the high temperature for being discharged aspirating hole 2 using aspiration pump 165 give up argon gas cavity is imported by air entraining pipe 163
In 161, new argon gas is preheated using the high temperature argon gas that gives up, can not only make full use of high temperature to give up the heat contained in argon gas
Amount, realizes energy-saving and emission-reduction, meanwhile, the argon gas being preheated is passed through in body of heater 1, it is possible to reduce argon gas takes away the heat in body of heater 1, enters
One step realizes energy-saving and emission-reduction, reduces the production cost of silicon ingot.
In order to improve heat exchange efficiency, extend heat-exchange time, the heat exchanger tube 162 is metal coil pipe.In order to further improve
Heat exchange efficiency, the heat exchanger tube 162 are made using copper pipe.
In order to reduce thermal loss, the energy is saved, energy consumption is reduced, heat-preservation cylinder 12, graphite crucible is provided with the body of heater 1
2nd, silica crucible 4, side heater 5, bottom heater 11 are respectively positioned in heat-preservation cylinder 12.In order to further reduce heat damage
Lose, insulation quilt 13 is additionally provided between the body of heater 1 and heat-preservation cylinder 12, while it is anti-on the inwall of heat-preservation cylinder 12 to scribble heat radiation
Penetrate layer 17.
Claims (7)
1. single crystal growing furnace, including body of heater (1), the body of heater (1) is internal to be provided with graphite crucible (2), and graphite crucible (2) bottom leads to
Cross crucible axis (3) mutually to fix with body of heater (1) bottom, be provided with silica crucible (4) in the graphite crucible (2), graphite crucible (2) is outside
Side is provided with side heater (5), and aspirating hole (6), in addition to tunger tube (7) and argon gas are provided with body of heater (1) side wall
Source (15), the argon gas source (15) are connected with tunger tube (7) by air inlet pipe (14), and the end of the tunger tube (7) passes through stove
Body (1) is extend into silica crucible (4), it is characterised in that：The bottom of the graphite crucible (2) is provided with bottom heater
(11), the bottom heater (11) and side heater (5) are integral type structure.
2. single crystal growing furnace as claimed in claim 1, it is characterised in that：Gas preheating unit is provided with the air inlet pipe (14)
(16), the gas preheating unit (16) includes closed cavity (161), and heat exchanger tube is provided with the cavity (161)
(162), the both ends of the heat exchanger tube (162) extend respectively to cavity (161) outside and connected with air inlet pipe (14), the argon gas source
(15) argon gas in is flowed into silica crucible (4) along air inlet pipe (14), heat exchanger tube (162), tunger tube (7) successively, the heat exchange
Manage (162) and the junction of cavity (161) seal, air entraining pipe (163) and blast pipe (164) are connected with the cavity (161),
One end of the air entraining pipe (163) connects with the aspirating hole (6) set on body of heater (1), the other end and cavity of air entraining pipe (163)
(161) it is internal to connect, aspiration pump (165) is provided with the air entraining pipe (163), the blast pipe (164) is interior with cavity (161)
Portion connects.
3. single crystal growing furnace as claimed in claim 2, it is characterised in that：The heat exchanger tube (162) is metal coil pipe.
4. single crystal growing furnace as claimed in claim 3, it is characterised in that：The heat exchanger tube (162) is made using copper pipe.
5. single crystal growing furnace as claimed in claim 4, it is characterised in that：Heat-preservation cylinder (12), graphite earthenware are provided with the body of heater (1)
Crucible (2), silica crucible (4), side heater (5), bottom heater (11) are respectively positioned in heat-preservation cylinder (12).
6. single crystal growing furnace as claimed in claim 5, it is characterised in that：Guarantor is provided between the body of heater (1) and heat-preservation cylinder (12)
Warm felt (13).
7. single crystal growing furnace as claimed in claim 6, it is characterised in that：Heat radiation reflection is scribbled on the inwall of the heat-preservation cylinder (12)
Layer (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620720001.8U CN206799790U (en) | 2016-07-11 | 2016-07-11 | Single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620720001.8U CN206799790U (en) | 2016-07-11 | 2016-07-11 | Single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206799790U true CN206799790U (en) | 2017-12-26 |
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ID=60727695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620720001.8U Active CN206799790U (en) | 2016-07-11 | 2016-07-11 | Single crystal growing furnace |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554755A (en) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of heating equipment and production of polysilicon equipment |
| CN112725903A (en) * | 2020-11-26 | 2021-04-30 | 南京晶升能源设备有限公司 | Thermal field of silicon carbide raw material synthesis furnace and synthesis furnace |
-
2016
- 2016-07-11 CN CN201620720001.8U patent/CN206799790U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554755A (en) * | 2018-12-19 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | A kind of heating equipment and production of polysilicon equipment |
| CN112725903A (en) * | 2020-11-26 | 2021-04-30 | 南京晶升能源设备有限公司 | Thermal field of silicon carbide raw material synthesis furnace and synthesis furnace |
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