CN206774540U - Self-heating effect detects structure - Google Patents
Self-heating effect detects structure Download PDFInfo
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- CN206774540U CN206774540U CN201720174214.XU CN201720174214U CN206774540U CN 206774540 U CN206774540 U CN 206774540U CN 201720174214 U CN201720174214 U CN 201720174214U CN 206774540 U CN206774540 U CN 206774540U
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Abstract
The utility model discloses a kind of self-heating effect to detect structure, and the self-heating effect test structure includes a substrate；At least two are formed at the fin unit in the substrate, and each fin unit includes at least one fin structure；At least two are formed at the first region in the substrate, each at least one fin structure of the first region in a fin unit.So, by the voltage for controlling at least one the first region, then, by the situation of change for the I V curves for detecting more at least one the first region, self-heating effect i.e. in can be known device, sensitive, effective it can reflect self-heating effect situation, so that technical staff has found and analyzed in time the influence of self-heating effect, corresponding Improving Measurements are made in time, improve the performance of device.
Description
Technical field
Semiconductor integrated circuit technical field is the utility model is related to, more particularly to a kind of self-heating effect detection structure.
Background technology
In advanced complementary metal oxide semiconductor (CMOS) industry, with 22nm and smaller size of arrival, in order to
Improve short-channel effect and improve the performance of device, fin formula field effect transistor (Fin Field-effect Transistor,
FinFET) because it has a smaller device architecture, and the advantage of better performances and be widely used.
But with the application of the structure, technical staff has found the structure, and there is also some defects.In FinFET structure
Heat caused by drain electrode can be by being diffused into fin structure and bases, and fin structure would generally be by dioxy in FinFET structure
SiClx etc. seals, and the heat conductivility of silicon and silica is all poor, so as to cause the temperature of fin structure to raise, the temperature of substrate
With rise.The temperature rise of device can cause the reduction of its electron mobility, this existing so as to cause device channel electric current to reduce
Self-heating effect (self-heating effect) as being referred to as device.
Therefore, self-heating effect just turns into a key factor for influenceing FinFET performances, but one kind does not have at present
The method of effect carries out detection monitoring to FinFET self-heating effect.In consideration of it, it is necessary to design a kind of self-heating effect detection structure
To solve above-mentioned technical problem.
Utility model content
The utility model provides a kind of self-heating effect detection structure, can effectively detect the self-heating effect in device, side
Just technical staff pinpoints the problems and improved problem in time, improves the performance of device.
To solve above-mentioned technical problem and other relevant issues, self-heating effect provided by the utility model detects structure, bag
Include：
One substrate；
At least two are formed at the fin unit in the substrate, and each fin unit includes at least one fin structure；
At least two are formed at the first region in the substrate, and each the first region is across a fin
At least one fin structure in unit.
Further, the self-heating effect detection structure is detected including an at least test side and at least one holds, and at least one
The individual the first region is as the test side, and at least one the first region is as the detected end, the inspection
The first region and the first region at the detected end for surveying end are alternately arranged.
Optionally, the self-heating effect detection structure includes three the first regions, wherein, one described first
Electrode district is as the test side, and two other described the first region is respectively as the detected end.
Further, in described self-heating effect detection structure, the first region of the test side is located at two institutes
State the centre for the first region for being detected end.
Optionally, in described self-heating effect detection structure, the bearing of trend of all the first regions is same
On straight line.
Further, in described self-heating effect detection structure, the line width of all the first regions is consistent.
Optionally, in described self-heating effect detection structure, each fin unit includes the fin of varying number
Structure.
Optionally, in described self-heating effect detection structure, each fin unit includes the fin of identical quantity
Structure.
Further, in described self-heating effect detection structure, each fin unit is included described in adjacent three
Fin structure.
Further, in described self-heating effect detection structure, all fin structures are parallel to each other.
Optionally, in described self-heating effect detection structure, the total quantity of all fin structures is 2~100
It is individual.
Optionally, in described self-heating effect detection structure, the two neighboring the first region is in the direction of extension
Spacing be the fin structure 0.5 times~5 times of width.
Further, the self-heating effect detection structure also includes the grid and second electrode being formed in the substrate
Area；The grid is across all fin units；The second electrode area is located at the side of the grid；Each described first
Electrode district is arranged in the opposite side of the grid.
Optionally, in described self-heating effect detection structure, the first region is drain region, the second electrode area
For common source area.
Optionally, in described self-heating effect detection structure, the second electrode area is across all fin units.
Optionally, in described self-heating effect detection structure, the width of the grid is 10nm~50nm.
Further, the self-heating effect detection structure also includes at least one dummy grid being formed in the substrate,
For the dummy grid across all fin units, the dummy grid is parallel with the grid and is located at the first region
And/or side of the second electrode area away from the grid.
Further, the self-heating effect detection structure includes two dummy grids, one of them described dummy grid position
In side of the first region away from the grid, another described dummy grid is located at the second electrode area away from described
The side of grid.
Optionally, in described self-heating effect detection structure, the width one of the width of the dummy grid and the grid
Cause.
Compared with prior art, the utility model has the advantages that：
Self-heating effect detection structure of the present utility model includes a substrate；At least two are formed at the fin in the substrate
Unit, each fin unit include at least one fin structure；At least two are formed at the first region in the substrate, often
At least one fin structure of the individual the first region in a fin unit.So, formed on the same base to
Few two the first regions across different fin units, wherein, at least one the first region can be used as a test side,
At least one the first region can be used as one to be detected end, the electricity of the first region by controlling the detected end
Pressure, then, changed by detecting the I-V curve of the first region of the test side, you can know the self-heating in device
Effect.
Further, the first region is drain region, because closer to drain region, the self-heating effect of device is bigger, so,
By the voltage in the drain region for controlling the detected end, the I-V curve for then detecting the drain region of the test side changes feelings
Condition, it can more accurately, effectively reflect the self-heating effect (i.e. the temperature variations of device) of device.Therefore, it is described from
The susceptibility of fuel factor detection structure is high, can timely and effectively reflect self-heating effect situation, so that technical staff has found in time
With the influence of analysis self-heating effect.Moreover, a hot-wire array, the test battle array can be formed in the self-heating effect detection structure
Row include several drain regions, the detection sensitivity of the self-heating effect detection structure can be further enhanced, so as to more
Accurately know the self-heating effect of device, make corresponding Improving Measurements in time, improve the performance of device.
Brief description of the drawings
Fig. 1 is the top view that a kind of self-heating effect detects structure；
Fig. 2 is the top view that self-heating effect detects structure described in the utility model embodiment.
Embodiment
A kind of self-heating effect detection structure is as shown in figure 1, self-heating effect detection structure includes a substrate 10；It is formed at institute
Three units in substrate 10 are stated, wherein A1 is the first detected unit, and A2 is detection unit, and A3 is the second detected unit.
First, which is detected unit A1, includes at least one fin structure 11 being formed in the substrate 10, in the figure, the fin structure
11 quantity is 9；Across the first grid 121 of all fin structures 11；Positioned at the both sides of first grid 121 and horizontal stroke
The first source region 131 and the first drain region 141 across all fin structures 11；Generally, in the structure shown here, it will also include at least one
Individual the first imitative grid 151 across all fin structures 11, and the first imitative grid 151 is parallel with the first grid 121
And it is located at side of first drain region 141 away from the first grid 121, the described first imitative grid 151 and the first grid
Both width of pole 121 are consistent.
The detected unit A3 of the detection unit A2 and second structure and the described first detected unit A1 structure are complete
It is exactly the same, the detection unit A2 include the fin structure 11, second grid 122, the second source region 132 and the second drain region 142,
And the second imitative grid 152；Described second, which is detected unit A3, includes the fin structure 11, the 3rd grid 123, the 3rd source region
133 and the 3rd drain region 143 and the 3rd imitative grid 153.The detection unit A2 is detected unit A1 and the positioned at described first
Two are detected between unit A3, and three is arranged parallel to each other.
So, by the voltage feelings in the drain region for controlling the described first detected detected unit A3 of unit A1 and second respectively
Condition (will described first be detected unit A1 and/or second be detected unit A3 be used as heating source, first drain region 141 with/
Or second drain region 143 as being detected end), the second drain region 142 that the detection unit A2 is detected (will described second
Drain region 142 is as test side) electric current and voltage relationship, you can know the temperature variations in device.
But inventor has found, sensitivity of the above-mentioned self-heating effect detection structure to temperature change is not high, detection monitoring
Self-heating effect effect in device is simultaneously bad.Inventor's research is considered because first drain region 141, the 3rd drain region 143 are divided
(it is not detected end to be too far apart with test side) farther out with the compartment of the second drain region 142, and heat is in titanium dioxide caused by drain region
Conduction is again slow in silicon and silicon, therefore when the heat in the drain region 143 of the first drain region 141 and/or the 3rd is conducted to the detection list
During first A2, the loss of heat is larger, causes the sensitivity of the detection unit A2, correctness not high.Because in FinFET structure
It is bigger closer to drain region, its self-heating effect.
Based on the studies above and discovery, the application provides a kind of self-heating effect detection structure, including a substrate；At least two
The fin unit being formed in the substrate, each fin unit include at least one fin structure；At least two be formed at it is described
The first region in substrate, each at least one fin structure of the first region in a fin unit.
Self-heating effect detection structure of the present utility model includes a substrate；At least two are formed at the fin in the substrate
Unit, each fin unit include at least one fin structure；At least two are formed at the first region in the substrate, often
At least one fin structure of the individual the first region in a fin unit.So, formed on the same base to
Few two the first regions across different fin units, wherein, at least one the first region can be used as a test side,
At least one the first region can be used as one to be detected end, the electricity of the first region by controlling the detected end
Pressure, then, changed by detecting the I-V curve of the first region of the test side, you can know the self-heating in device
Effect.
Self-heating effect of the present utility model detection structure is described in more detail below in conjunction with schematic diagram, wherein table
Preferred embodiment of the present utility model is shown, it should be appreciated that it is new that those skilled in the art can change described here practicality
Type, and still realize advantageous effects of the present utility model.
The utility model is more specifically described by way of example referring to the drawings in the following passage.According to following explanation and power
Sharp claim, advantages and features of the present utility model will become apparent from.It should be noted that accompanying drawing using very simplified form and
Non- accurately ratio is used, only to purpose that is convenient, lucidly aiding in illustrating the utility model embodiment.
The embodiment of the self-heating effect detection structure is exemplified below, should with clear explanation content of the present utility model
It is clear that content of the present utility model is not restricted to following examples, other pass through the normal of those of ordinary skill in the art
The improvement of rule technological means is also within thought range of the present utility model.
Referring to Fig. 2, Fig. 2 is the top view that self-heating effect detects structure described in the present embodiment, the self-heating effect inspection
Geodesic structure includes a substrate 20；At least two are formed at the fin unit in the substrate 20, and each fin unit is included at least
One fin structure 21, in the present embodiment, preferably, the quantity of the fin structure 21 is 9, all phases of the fin structure 21
It is mutually parallel；At least two are formed at the first region in the substrate 20, and each the first region is across described in one
At least one fin structure 21 in fin unit, in the present embodiment, the first region are drain region, because in FinFET
In, it is bigger closer to the position in drain region, self-heating effect.
Preferably, in the present embodiment, the self-heating effect detection structure divides 9 fin structures 21 for three fin lists
Member, each fin unit includes the fin structure 21 of adjacent three, and (i.e. three adjacent fin structures 21 of the top are
First fin unit 211, middle three adjacent fin structures 21 are second fin unit 212, three phases bottom
The adjacent fin structure 21 is the 3rd fin unit 213).Accordingly, three leakages are provided with the self-heating effect detects structure
Area is respectively the first drain region 241, the second drain region 242 and the 3rd drain region 243, and then, first drain region 241 is across described first
All fin structures 21 in individual fin unit 211, second drain region 242 is in second fin unit 212
All fin structures 21, all fin structures 21 of the 3rd drain region 243 in the 3rd fin unit 213, and
And the bearing of trend in first drain region 241, the second drain region 242 and the 3rd drain region 243 is on the same line, meanwhile, described
Two drain regions 242 are located at the centre in the drain region 243 of the first drain region 241 and the 3rd, and the line width in three drain regions is consistent；Moreover, it is
The sensitivity of self-heating effect detection structure is improved, the spacing of the two neighboring drain region in the direction of extension can be controlled and existed
0.5 times of the width of the fin structure 21~5 times, such as 1 times, 2 times, 3 times or 4 times etc..
Generally, a grid 22 being formed in the substrate 20 and the be will also include in the self-heating effect detects structure
Two electrode districts 23, the grid 22 is across all fin structures 21；The second electrode area 23 is located at the grid 22
Side；Meanwhile each drain region is arranged in the opposite side of the grid 22.In the present embodiment, the second electrode area
23 also across all fin structures 21, and accordingly, the second electrode area 23 is common source area 23.
In addition, also include at least one dummy grid being formed in the substrate 20 in the self-heating effect detection structure
25, the dummy grid 25 is parallel with the grid 22 and positioned at described across the described fin structure 21, the dummy grid 25
The side of the first region or second electrode area 23 away from the grid 22.For example, in the present embodiment, the self-heating effect
Detection structure includes two dummy grids 25, and one of them described dummy grid 25 is located at the drain region (such as the first drain region
241) side away from the grid 22, another described dummy grid 25 are located at one of the common source area 23 away from the grid 22
Side.Both width of the dummy grid 25 and the grid 22 are consistent, such as the width of the grid 22 is 10nm~50nm.
Therefore, it can be understood as including a detection unit in above-mentioned self-heating effect detects structure and two be detected list
Member, the detection unit include the substrate 20, the grid 22,23, second, common source area fin unit 212 and across
Second drain region 242 of second fin unit 212；First, which is detected unit, includes the substrate 20, grid 22, described
23, first, common source area fin unit 211 and across the first drain region 241 of first fin unit 211；Second is detected list
Member includes the substrate 20, the grid 22, the common source area 23, the 3rd fin unit 213 and across the 3rd fin
3rd drain region 243 of unit 213.
In order to further illustrate the beneficial effect of the self-heating effect of the present embodiment detection structure, next, simple place of matchmakers
State the specific detection process of self-heating effect detection structure.
Above-mentioned self-heating effect is detected first in structure and is detected unit and/or the second detected unit as heating
Source, reflect self-heating effect situation by detecting electric current and the voltage relationship of the detection unit.Specifically, pass through difference
Control is detected the voltage condition in the drain region 243 of first drain region 241 and the 3rd at end, such as：By first drain region 241 and
When the voltage in three drain regions 243 is disposed as 0, the electric current and electricity in the second drain region 242 (i.e. test side) of the detection unit are detected
Pressure situation；Then, the voltage in the drain region 243 of the first drain region 241 and/or the 3rd is arranged to VDD (VDD is not 0), then detected
The electric current and voltage condition in the second drain region 242 of the detection unit, by the change for comparing electric current and voltage before and after test side
Change situation, the situation of change of corresponding resistor can be obtained, i.e., can reflect the temperature variations (i.e. self-heating effect) of structure.
Because the drain region 243 (being detected end) of the first drain region 241 and the 3rd is respectively at the interval of second drain region 242 (test side)
Relatively near, then what the detection unit can be very sensitive detects temperature variations.Therefore, above-mentioned self-heating effect detects structure
High sensitivity, it can effectively reflect self-heating effect situation, to facilitate technical staff's scientific discovery problem and propose that improvement is arranged
Apply, improve the performance of device.
In addition, above-mentioned self-heating effect detection structure can also be by a series of detection units and detected unit composition one
Hot-wire array, the susceptibility of detection can be further enhanced.So as to more accurately know the self-heating effect of device, make in time
Go out corresponding Improving Measurements, improve the performance of device.
Obviously, the quantity (fin of the fin structure in the self-heating effect detection structure that those skilled in the art know
The quantity of structure can be 2~100), the quantity of dummy grid, the size of grid, the size of dummy grid, the size of fin structure
And common source area and drain region all have an impact along the size in fin direction etc. to FinFET self-heating effects, therefore, people in the art
Member can obtain the quantity to fin structure, the quantity of dummy grid, the size of grid, puppet by above-described embodiment of the present utility model
The size of grid, the size of fin structure and common source area and drain region are set along the size in fin direction etc..
To sum up, self-heating effect detection structure of the present utility model includes a substrate；At least two are formed at the substrate
On fin unit, each fin unit includes at least one fin structure；At least two are formed at the first electricity in the substrate
Polar region, each at least one fin structure of the first region in a fin unit.So, on the same base
Formed at least two across different fin units the first region, wherein, at least one the first region can be used as one
Test side, at least one the first region can be used as one to be detected end, by the first electricity for controlling the detected end
The voltage of polar region, then, changed by detecting the I-V curve of the first region of the test side, you can know device
In self-heating effect.
Further, the first region is drain region, because closer to drain region, the self-heating effect of device is bigger, so,
By the voltage in the drain region for controlling the detected end, the I-V curve for then detecting the drain region of the test side changes feelings
Condition, it can very accurately, effectively reflect the self-heating effect (i.e. the temperature variations of device) of device.Therefore, it is described from
The susceptibility of fuel factor detection structure is high, can timely and effectively reflect self-heating effect situation, so that technical staff has found in time
With the influence of analysis self-heating effect.Moreover, a hot-wire array, the test battle array can be formed in the self-heating effect detection structure
Row include several drain regions, the detection sensitivity of the self-heating effect detection structure can be further enhanced, so as to more
Accurately know the self-heating effect of device, make corresponding Improving Measurements in time, improve the performance of device.
Obviously, preferred embodiment only of the present utility model in the above-described embodiments, detected in above-mentioned self-heating effect
On the basis of structure, additionally it is possible to which self-heating effect as drawing multiple types detects structure.Therefore, above-described embodiment is not limiting
The utility model.It is new without departing from this practicality that those skilled in the art can carry out various changes and modification to the utility model
The spirit and scope of type.So, if these modifications and variations of the present utility model belong to the utility model claims and its
Within the scope of equivalent technologies, then the utility model is also intended to comprising including these changes and modification.
Claims (18)
1. a kind of self-heating effect detects structure, it is characterised in that including：
One substrate；
At least two are formed at the fin unit in the substrate, and each fin unit includes at least one fin structure；
At least two are formed at the first region in the substrate, and each the first region is across a fin unit
In at least one fin structure；And
An at least test side and at least one is detected end, and at least one the first region is as the test side, at least one
The individual the first region is as the detected end, the first region of the test side and first electricity at the detected end
Polar region is alternately arranged.
2. self-heating effect as claimed in claim 1 detects structure, it is characterised in that the self-heating effect detection structure includes
Three the first regions, wherein, a first region is as the test side, two other described first electrode
Area is respectively as the detected end.
3. self-heating effect as claimed in claim 2 detects structure, it is characterised in that the first region of the test side is located at
The centre of the first region at two detected ends.
4. self-heating effect as claimed in claim 1 detects structure, it is characterised in that the extension of all the first regions
Direction is on same straight line.
5. self-heating effect as claimed in claim 1 detects structure, it is characterised in that the line width of all the first regions
It is consistent.
6. self-heating effect as claimed in claim 1 detects structure, it is characterised in that each fin unit includes varying number
The fin structure.
7. self-heating effect as claimed in claim 1 detects structure, it is characterised in that each fin unit includes identical quantity
The fin structure.
8. self-heating effect as claimed in claim 7 detects structure, it is characterised in that each fin unit includes adjacent three
The individual fin structure.
9. self-heating effect as claimed in claim 1 detects structure, it is characterised in that all fin structures are parallel to each other.
10. self-heating effect as claimed in claim 1 detects structure, it is characterised in that the total quantity of all fin structures
For 2~100.
11. self-heating effect as claimed in claim 1 detects structure, it is characterised in that the two neighboring the first region exists
Spacing on bearing of trend is 0.5 times~5 times of the width of the fin structure.
12. the self-heating effect detection structure as described in claim 1 to 11 any one, it is characterised in that the self-heating effect
Detection structure also includes grid and the second electrode area being formed in the substrate；The grid is across all fin lists
Member；The second electrode area is located at the side of the grid；Each the first region is arranged in the another of the grid
Side.
13. self-heating effect as claimed in claim 12 detects structure, it is characterised in that the first region is drain region, institute
It is common source area to state second electrode area.
14. self-heating effect as claimed in claim 12 detects structure, it is characterised in that the second electrode area is across all
The fin unit.
15. self-heating effect as claimed in claim 12 detects structure, it is characterised in that the width of the grid be 10nm~
50nm。
16. self-heating effect as claimed in claim 12 detects structure, it is characterised in that the self-heating effect detection structure is also wrapped
At least one dummy grid being formed in the substrate is included, the dummy grid is across all fin units, the dummy grid
It is parallel with the grid and be located at the side of the first region and/or second electrode area away from the grid.
17. self-heating effect as claimed in claim 16 detects structure, it is characterised in that the self-heating effect detection structure includes
Two dummy grids, one of them described dummy grid are located at side of the first region away from the grid, another
The dummy grid is located at the side of the second electrode area away from the grid.
18. self-heating effect as claimed in claim 16 detects structure, it is characterised in that the width of the dummy grid and the grid
The width of pole is consistent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201720174214.XU CN206774540U (en) | 2017-02-24 | 2017-02-24 | Self-heating effect detects structure |
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| CN201720174214.XU CN206774540U (en) | 2017-02-24 | 2017-02-24 | Self-heating effect detects structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110095703A (en) * | 2019-04-12 | 2019-08-06 | 北京大学 | A kind of self-heating effect test structure and method |
| CN110346702A (en) * | 2019-06-12 | 2019-10-18 | 北京大学 | Self-heating effect tests structure and method |
| CN110411392A (en) * | 2019-07-17 | 2019-11-05 | 上海华力集成电路制造有限公司 | The nano strip of semiconductor devices or the measurement method of nanometer sheet width |
| CN116224009A (en) * | 2023-04-11 | 2023-06-06 | 中芯先锋集成电路制造(绍兴)有限公司 | Measuring structure and measuring method for SOI self-heating effect |
-
2017
- 2017-02-24 CN CN201720174214.XU patent/CN206774540U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110095703A (en) * | 2019-04-12 | 2019-08-06 | 北京大学 | A kind of self-heating effect test structure and method |
| CN110346702A (en) * | 2019-06-12 | 2019-10-18 | 北京大学 | Self-heating effect tests structure and method |
| CN110346702B (en) * | 2019-06-12 | 2021-05-04 | 北京大学 | Self-heating effect test structure and method |
| CN110411392A (en) * | 2019-07-17 | 2019-11-05 | 上海华力集成电路制造有限公司 | The nano strip of semiconductor devices or the measurement method of nanometer sheet width |
| CN116224009A (en) * | 2023-04-11 | 2023-06-06 | 中芯先锋集成电路制造(绍兴)有限公司 | Measuring structure and measuring method for SOI self-heating effect |
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