CN206671519U - A kind of single-chip twin shaft magneto-resistor linear transducer - Google Patents
A kind of single-chip twin shaft magneto-resistor linear transducer Download PDFInfo
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- CN206671519U CN206671519U CN201720293521.XU CN201720293521U CN206671519U CN 206671519 U CN206671519 U CN 206671519U CN 201720293521 U CN201720293521 U CN 201720293521U CN 206671519 U CN206671519 U CN 206671519U
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Abstract
The utility model discloses a kind of single-chip twin shaft magneto-resistor linear transducer, including the substrate on X Y planes, push-pull type X-axis and push-pull type Y-axis magneto-resistor linear transducer on substrate, the former includes X push arms and X draws bow, the latter includes Y push arms and Y draws bow, X push arms, X draws bow, Y push arms and Y, which draw bow, respectively includes at least one magnetic susceptibility direction along+X, X, + Y, the magneto-resistor linear sensing cell array of Y-direction, with same magnetic field sensitive direction magneto-resistor linear sensing cell array arranged adjacent, magneto-resistor linear sensing unit is respectively provided with the MTJ cell of same magnetic multi-layer film structure, its inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal, the single-chip twin shaft magneto-resistor linear transducer also includes soft magnetism flux decline device.The utility model has a compact-sized, high accuracy, small size, and the advantages of significantly magnetic field working range can be realized.
Description
Technical field
Magnetic sensor field is the utility model is related to, more particularly to a kind of single-chip twin shaft magneto-resistor linear transducer.
Background technology
Twin shaft linear transducer, for measurement space external magnetic field on an x-y plane along two orthogonal directions such as X and Y sides
To magnetic-field component information, available for planar field profile measure, be widely used in detection of magnetic field field.
Twin shaft magneto-resistor linear transducer includes two uniaxial magnetic resistive linearity sensors of X and Y, each single shaft X or Y magnetoelectricities
Linear transducer generally use push-pull type bridge structure is hindered to strengthen the signal output of magneto-resistor linear transducer, and push-pull type is electric
Bridge includes pushing away magneto-resistor linear sensing unit and draws magneto-resistor linear sensing unit, and has opposite magnetic-field-sensitive side respectively
To.
For the twin shaft magneto-resistor linear transducer of MTJ types, generally use has single magnetic-field-sensitive direction by one,
Magneto-resistor sensing unit such as X-axis is cut into slices, and overturns 90,180 and 270 degree respectively, and magneto-resistor sensing is pushed away to obtain Y-axis respectively with this
The section of magneto-resistor sensing unit is drawn in unit section, X-axis and Y-axis draws the section of magnetic resistance sensor unit, along with original X-axis pushes away
Magneto-resistor sensing unit is cut into slices.Therefore, twin shaft magnetic resistance sensor will at least need 4 sections using the method for upset section；
It the advantage is that, preparation method is simple, it is only necessary to a section, and a corresponding ferromagnetic reference structure；Itself the disadvantage is that,
Need 4 sections of operation to be accurately positioned in the same plane, add due to the measurement of sensor caused by operational error
The possibility of loss of significance.
Using the design of the ferromagnetic reference of multi-layer film structure, by changing the ferromagnetic layer with inverse ferric magnetosphere coupling interaction
The number of plies of the plural layers formed with metal spacing layer, i.e. one of them is odd-level, and another is the method for even level, can
To realize that pushing away for opposite ferromagnetic reference and draws the manufacture of magneto-resistor sensing unit at magneto-resistor sensing unit, for orthogonal ferromagnetic
The orientation of reference layer, it can be realized by two kinds of different inverse ferric magnetosphere AF1 and AF2 by magnetic field thermal annealing twice, it is lacked
Point is, due to needing to introduce at least four multi-layer film structures and magnetic-field annealing twice when depositing plural layers, adds
The complexity of micro fabrication.
Chinese Patent Application No. discloses one kind for CN201610821610.7 patent and uses laser program-controlled heating magnetic field
The method of annealing is scanned to magneto-resistor sensing unit to realize, quickly heats inverse ferric magnetosphere to more than blocking temperature, simultaneously
It can apply magnetic field along any direction in cooling procedure, can scan one by one, even scanning realizes that magneto-resistor sensing is single piecewise
The orientation in the magnetic-field-sensitive direction of member in either direction, it can realize that the twin shaft magneto-resistor in single section passes using this method
Four kinds of manufactures with orthogonally oriented magneto-resistor sensing unit and its array of unit are felt, so as to overcome the essence of upset section
It is determined that the problem of the micro fabrication complexity of position and a variety of magnetic multi-layer film structures of deposition, and single-chip twin shaft magnetoelectricity can be realized
Hinder the batch micro operations of linear transducer.
On the other hand, China Patent Publication No. is that CN104776794A patent discloses a kind of high intensity magnetic singly encapsulated
Field magneto-resistor angular transducer, increase magnetic by increasing the method for field decay layer on the surface of magneto-resistor angle sensor unit
The magnetic-field measurement scope of resistance angle sensor unit, therefore, it is also possible to the method by increasing soft magnetism flux decline device, can
To obtain the twin shaft high magnetic field intensity magneto-resistor linear transducer of single-chip.
In addition, during practical laser program-controlled heating magnetic anneal, because magneto-resistor linear sensing unit is in process
In it is that may be present deviate circular, anisotropy is disperseed, and the factor such as stress, may all cause actual pinned layer magnetization side
+ the X set to deviation ,-X ,+Y and -Y direction, therefore also require setting+X ,-X-axis magneto-resistor linear sensing unit and+Y ,-Y
Angular range between axle magneto-resistor linear sensing unit pinned layer magnetization direction.
The content of the invention
In order to solve the above problems, the purpose of this utility model is to propose a kind of single-chip twin shaft magneto-resistor linear sensing
Device, it has a compact-sized, high accuracy, small size, and the advantages of significantly magnetic field working range can be realized.
To reach above-mentioned purpose, the technical solution adopted in the utility model is：
A kind of single-chip twin shaft magneto-resistor linear transducer, including substrate on X-Y plane, on the substrate
Push-pull type X-axis magneto-resistor linear transducer and push-pull type Y-axis magneto-resistor linear transducer, the push-pull type X-axis magneto-resistor line
Property sensor include X push arms and X and draw bow, the push-pull type Y-axis magneto-resistor linear transducer includes Y push arms and Y draws bow, the X
Push arm, X are drawn bow, Y push arms and Y are drawn bow respectively including at least one magnetic-field-sensitive direction edge+X ,-X ,+Y, the magnetoelectricity of -Y direction
Linear sensing cell array is hindered, the magneto-resistor linear sensing cell array is by least one magneto-resistor linear sensing unit group
Into,
The push-pull type X-axis magneto-resistor linear transducer and the push-pull type Y-axis magneto-resistor linear transducer have common
Geometric center,
The magneto-resistor linear sensing unit is MTJ cell, and the magneto-resistor linear sensing unit has identical magnetic more
Layer film structure, the magnetic multi-layer film structure include Seed Layer, lower electrode layer, inverse ferric magnetosphere, pinning layer, Ru from bottom to top
Layer, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer and passivation layer, or from bottom to top include Seed Layer,
Lower electrode layer, inverse ferric magnetosphere, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer and passivation layer,
The inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal, has the magnetoelectricity of the identical direction of magnetization
Resistance linear sensing cell array be disposed adjacent, between the magneto-resistor linear sensing cell array with different magnetic-field-sensitives with
Heat-insulated gap,
The nonmagnetic intermediate layer is Al2O3Or MgO, the magnetic bias layer are hard magnetic layer, another inverse ferric magnetosphere or conjunction
Into inverse ferric magnetosphere structure, the passivation layer is the material to laser-light transparent,
The either above or below of the linear magnetoresistance sensing unit or the linear magnetoresistance sensing unit array is set
Soft magnetism flux decline device is equipped with to measure the magnetic field intensity of high field intensity external magnetic field.
Further, the magneto-resistor linear sensing unit has for oval or described magneto-resistor linear sensing unit
Rectangular middle part and the both ends triangular in shape or fan-shaped for being located at middle part opposite sides respectively；What composition X push arms and X drew bow
The major axis of magneto-resistor linear sensing unit is along Y direction, and short axle is along X-direction；It is linear to form the magneto-resistor that Y push arms and Y draw bow
The major axis of sensing unit is along X-direction, and short axle is along Y direction；The direction of magnetization of the reference layer and the free layer is mutually hung down
Directly, there is identical magnetic field sensitivity and zero field ressitance value.
Further, the X push arms, the X are drawn bow, the Y push arms and the Y are drawn bow including identical quantity, and had
The magneto-resistor linear sensing unit of same resistance, and respective magneto-resistor linear sensing unit passes through series, parallel or mixing
Connection in series-parallel forms both ends mouth structure.
Further, the reference layer magnetic of the magneto-resistor linear sensing unit of the push-pull type X-axis magneto-resistor linear transducer
Change the angle model of the reference layer direction of magnetization of the magneto-resistor linear sensing unit of direction and push-pull type Y-axis magneto-resistor linear transducer
It is trapped among between 85 ° and 95 °.
Further, the push-pull type X magneto-resistors linear transducer and the push-pull type Y magneto-resistors linear transducer are half
Bridge, full-bridge or quasi- bridge structure.
Further, arrangement mode is between the magneto-resistor linear sensing cell array：+ X/-Y/+Y/-X, or+X/
+ Y/-Y/-X, either-X/-Y/+Y/+X or+X/-Y/+Y/-X.
Further, it is attached between the magneto-resistor linear sensing cell array by interconnecting wire, at least partly
The interconnection wire have positioned at each magneto-resistor linear sensing unit side zigzag section, and it is described interconnection wire song
The distance of trisection and the magneto-resistor linear sensing cell array is more than 15 microns.
Further, power supply common port Vs and push arm and the interconnection wire drawn bow are connected and be connected public terminal GND and
Push arm and the interconnection wire drawn bow have identical interconnection resistance, connect respectively signal output common port V+, V- and push arm with
And the interconnection wire drawn bow has identical interconnection resistance, there is the interconnection wire straightway or the zigzag section to obtain
Identical interconnection resistance.
Further, the material of the soft magnetism flux decline device is High-magnetic permeability soft magnetic alloy, and the high magnetic permeability soft magnetism closes
Gold include Fe, Co, Ni element in one or more, its thickness between 5-30 um, the magneto-resistor linear sensing unit and
Insulation material layer is provided between the soft magnetism flux decline device, the soft magnetism flux decline device is circular or square；
The soft magnetism flux decline device is located at that the magneto-resistor linear sensing unit is just upper or underface, and with the magnetic
Resistive linearity sensing unit is concentric, and the soft magnetism flux decline device diameter or the length of side are more than the magneto-resistor linear sensing unit
Major axis,
Or, the soft magnetism flux decline device is located at the surface or underface of the magneto-resistor sensing unit array, and
Concentric with the magneto-resistor sensing unit array, the soft magnetism flux decline device diameter or the length of side sense more than the magneto-resistor
The catercorner length of cell array.
Further, institute's passivation layer is Ultra-Violet Laser transparent material, including BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、
LaF3、MgF2、Sc2O3、HfO2Or SiO2；
Or, the passivation layer is infrared laser transparent material, including diamond-like carbon film, MgO, SiN, SiC, AlF3、
MgF2、SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge；
And the passivation layer surface adds ARC.
Further, the power supply of the X-axis magneto-resistor linear transducer and Y-axis magneto-resistor linear transducer, output draw
Edge arrangement of the pin along sensor chip.
The utility model compared with prior art, has following technique effect：The utility model uses single chip architecture, will
Two linear transducers are integrated on the same chip, and the magneto-resistor linear sensing unit of two linear transducers has phase
Same magnetic multi-layer film structure, the utility model has compact-sized, high accuracy, small size, and can realize significantly magnetic field work
The advantages of making scope.
Brief description of the drawings
Fig. 1 is a kind of single-chip twin shaft magneto-resistor linear transducer schematic diagram of the present utility model；
Fig. 2 is magneto-resistor linear sensing unit magnetic multi-layer film structure figure of the present utility model；
Fig. 3（a1）, Fig. 3（a2）, Fig. 3（a3）And Fig. 3（b1）, Fig. 3（b2）, Fig. 3（b3）Respectively illustrate in Fig. 2 at A
The partial enlarged drawing of adoptable six kinds of different situations；
Fig. 4（a）, Fig. 4（b）, Fig. 4（c）And Fig. 4（d）Respectively illustrate several magneto-resistor linear sensings of the present utility model
The shape graph of unit；
Fig. 5（a1）, Fig. 5（a2）, Fig. 5（a3）And Fig. 5（a4）Several soft magnetism flux of the present utility model are respectively illustrated to decline
Subtract the front view of device shape and distribution；
Fig. 6（a1）, Fig. 6（a2）, Fig. 6（a3）And Fig. 6（a4）Several soft magnetism flux of the present utility model are respectively illustrated to decline
Subtract the side view of device distribution
Fig. 7（a）、7（b）Push-pull type X-axis respectively of the present utility model, the structure chart of Y-axis magneto-resistor linear transducer；
Fig. 8 is push-pull type magneto-resistor linear transducer interconnection resistance distribution map of the present utility model；
Fig. 9-12 is shown as several magneto-resistor linear sensing cell array distribution maps of the present utility model.
Embodiment
It is new below in conjunction with this practicality to make the purpose, technical scheme and advantage of the utility model embodiment clearer
Accompanying drawing in type embodiment, the technical scheme in the embodiment of the utility model is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model part of the embodiment, rather than whole embodiments.
Below with reference to the accompanying drawings and in conjunction with the embodiments, the utility model is described in detail.
Fig. 1 is single-chip twin shaft magneto-resistor linear transducer schematic diagram, including, the substrate 1 on X-Y plane, it is located at
Push-pull type X-axis magneto-resistor linear transducer 2 and push-pull type Y-axis magneto-resistor linear transducer 3 on substrate 1, wherein, X-axis magnetoelectricity
Resistance linear transducer 2 and Y-axis magneto-resistor linear transducer 3 have common geometric center, so, X-axis magnetic resistance sensor and Y
Measured field region has identical average value to axle magnetic resistance sensor on substrate 1.Push-pull type X-axis magneto-resistor linearly passes
Sensor includes X push arms and X draws bow, and push-pull type Y-axis magneto-resistor linear transducer includes Y push arms and Y draws bow.X push arms are included at least
One magnetic-field-sensitive direction magneto-resistor linear sensing cell array 4 in X direction and 5, X draw bow including at least one magnetic-field-sensitive
Magneto-resistor linear sensing cell array 6 and 7, Y push arm of the direction along -X direction include at least one magnetic-field-sensitive direction along Y-direction
Magneto-resistor linear sensing cell array 8 and 9, Y draw bow including the magneto-resistor line at least one magnetic-field-sensitive direction along -Y direction
Property sensing unit array 10 and 11.The different adjacent magneto-resistor sensing unit array such as 4,5 in two of which magnetic-field-sensitive direction
Between 8,9, between 8,9 and 10,11, separated respectively by insulated room away from 12-1,12-2,12-3 between 10,11 and 6,7,
Insulated room is to cause laser to heat the magneto-resistor different to adjacent magnetic field sensitive direction and sense linear unit battle array away from 12 purpose
The influence of row is isolated.The magneto-resistor linear sensing cell array of+X ,-X ,+Y and-Y magnetic field orientating is by identical magneto-resistor
Linear sensing unit 15 forms, and X push arms, X draws bow, and Y push arms and Y draw bow and include+X ,-X ,+Y and-the Y magnetic susceptibility of identical quantity
Direction magneto-resistor linear sensing unit, and connect into two-port each via series, parallel or the series-parallel form of mixing
Structure, and there is identical resistance.It is attached between magneto-resistor linear sensing cell array by interconnecting the form of wire 13,
And the interconnection wire 13 for not being connected with the magneto-resistor linear sensing unit in magneto-resistor linear sensing cell array, then position
In the range of distance 14 is more than 15um between magneto-resistor sensing unit array, in addition, 16 tie for the tortuous of interconnection wire
Structure（I.e. so-called curved section）, its object is to interconnect the method for conductor length by increasing to increase interconnection conductor resistance.
Fig. 2 and 3 shows the magnetic multi-layer film structure figure of magneto-resistor linear sensing unit, magneto-resistor linear sensing unit 80
For magnetic tunnel-junction MTJ cell, according to two kinds of different Rotating fields of spin-exchange-coupled, 6 kinds of situations, wherein Fig. 3 can be divided into（a1-a3）
Ferromagnetic reference exchange-coupled structure be：Inverse ferric magnetosphere/pinning layer/Ru layers/ferromagnetic reference, from top to bottom, is followed successively by：Kind
Sublayer 81, lower electrode layer 82, inverse ferric magnetosphere 83, pinning layer 84, Ru layers 85, ferromagnetic reference 86, nonmagnetic intermediate layer 87, it is ferromagnetic from
By layer 88, Fig. 3（b1-b3）It is then another situation of ferromagnetic reference spin-exchange-coupled, inverse ferric magnetosphere/ferromagnetic reference, from
Under to being above followed successively by：Seed Layer 81, lower electrode layer 82, inverse ferric magnetosphere 83, ferromagnetic reference 86, nonmagnetic intermediate layer 87, it is ferromagnetic from
By layer 88.Wherein Fig. 3（a1）And Fig. 3（b1）In be with ferromagnetic free layer exchange-coupled structure：Ferromagnetic free layer 88/ is antiferromagnetic
Layer 89；Fig. 3（a2）And Fig. 3（b2）In be with ferromagnetic free layer exchange-coupled structure：92/ anti-iron of ferromagnetic free layer 88/Ru layers
Magnetosphere 89；Fig. 2（a3）And Fig. 3（b3）In ferromagnetic free layer 88 be then biased by the external magnetic field of hard magnetic layer 94.MTJ cell
The superiors be upper electrode layer 90 and passivation layer 91.Wherein, nonmagnetic intermediate layer Al2O3Or MgO film, the magnetic of inverse ferric magnetosphere 83
It is the direction of magnetization and magneto-resistor linear sensing list for determining ferromagnetic reference respectively along+X ,-X ,+Y and -Y direction to change direction
The sensitive magnetic direction of member, and the direction of magnetization of ferromagnetic free layer is then vertical with the direction of ferromagnetic reference, therefore exchange therewith
The inverse ferric magnetosphere 89 of coupling biases the direction of the hard magnetic layer 94 also ferromagnetic reference with corresponding magneto-resistor linear sensing unit
86 directions are vertical.
Fig. 4 is the shape graph of magneto-resistor linear sensing unit 80, for ellipse, such as Fig. 4（a）And Fig. 4（c）It is shown；Or
Middle part is rectangle, is respectively triangle or sector positioned at the both ends of middle part opposite sides, such as Fig. 4（b）And Fig. 4（d）Shown
Structure.Wherein Fig. 4（a）And Fig. 4（b）For shape corresponding to X-axis magneto-resistor linear sensing unit, its major axis and short axle are respectively along Y
And X-direction；Fig. 4（c）And Fig. 4（d）For shape corresponding to Y-axis magneto-resistor linear sensing unit, its major axis and short axle respectively along X and
Y-direction.In both cases, short-axis direction is the ferromagnetic reference direction of magnetization, respectively edge+X, -X direction and+Y, -Y direction,
Ferromagnetic free layer direction is long axis direction.In order to ensure that twin shaft magneto-resistor linear transducer can normally work, it is contemplated that by
In magneto-resistor linear sensing unit reality that may be present caused by deviateing circular, thermal stress and anisotropic dispersiveness
Pinned layer magnetization direction deviation+X ,-X ,+Y and -Y direction, also require sensitive direction for X-axis and the iron of Y-axis magneto-resistor sensing unit
Angular orientation scope is between 85 ° and 95 ° between the magnetic reference layer direction of magnetization.
Fig. 5,6 are soft magnetism flux decline device shape and distribution map, and the material of soft magnetism flux decline device is high magnetic permeability soft magnetism
Alloy, the High-magnetic permeability soft magnetic alloy include the one or more in Fe, Co, Ni element, and its thickness is between 5-30 um, institute
It is insulation material layer to state between magneto-resistor linear sensing unit and the soft magnetism flux decline device, and the soft magnetism flux decline device is
Circular or square, and positioned at the magneto-resistor linear sensing unit is just upper or underface, and linearly passed with the magneto-resistor
Feel that unit is concentric, the soft magnetism flux decline device diameter or the length of side are more than the major axis of the magneto-resistor linear sensing unit, or
Person, the soft magnetism flux decline device positioned at the surface or underface for pushing away, drawing magneto-resistor sensing unit array, and with institute
It is concentric to state magneto-resistor sensing unit array, the soft magnetism attenuator diameter or the length of side are more than the magneto-resistor sensing unit array
Catercorner length, wherein, Fig. 5（a1）And Fig. 6（a1）It is located at oval magneto-resistor for circular soft magnetism flux decline device linearly to pass
Feel the front view and side view immediately below unit, Fig. 5（a2）And Fig. 6（a2）It is that square soft magnetism flux decline device is located at ellipse
Front view and side view immediately below magneto-resistor linear sensing unit.In both cases, its diameter or the length of side are more than ellipse
The major axis of shape.Fig. 5（a3）And Fig. 6（a3）It is located at for circular soft magnetism flux decline device immediately below magneto-resistor linear sensing cell array
Front view and side view, Fig. 5（a4）And Fig. 6（a4）It is located at oval magneto-resistor for square soft magnetism flux decline device linearly to pass
Feel the front view and side view immediately below cell array.Now its diameter or the length of side are more than the catercorner length of array.
In addition, passivation layer is Ultra-Violet Laser transparent material, including BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、
MgF2、Sc2O3、HfO2Or SiO2。
The passivation layer is infrared laser transparent material, including diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、
SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge.
The passivation layer surface adds ARC.
The power supply of the X-axis magneto-resistor linear transducer and Y-axis magneto-resistor linear transducer, output pin is along square
The side arrangement of shape chip.
Fig. 7 is push-pull type twin shaft magneto-resistor linear transducer structure chart, can be half-bridge, full-bridge or quasi- bridge structure, Fig. 7
（a）For push-pull type X-axis magneto-resistor linear transducer full bridge structure figure, Fig. 7（b）It is complete for push-pull type Y-axis magneto-resistor linear transducer
Bridge structure chart.
Fig. 8 is push-pull type magneto-resistor linear transducer interconnection resistance distribution map, for push-pull type X-axis magneto-resistor linear sensing
Device or push-pull type Y-axis magneto-resistor linear transducer, either in push-pull type full-bridge or half-bridge circuit, connect power supply common port
Vs and the push arm and the interconnection wire drawn bow, and the interconnection wire for connecting ground public terminal GND and the push arm and drawing bow are equal
With identical interconnection resistance Rc1, the interconnection wire for connecting signal output common port V+, V- and the push arm and drawing bow is respectively provided with
Identical interconnection resistance Rc2, and all push arms and draw bow simultaneously with identical resistance, in this manner it is ensured that push-pull type X-axis magnetic
It is 0 voltage signal that resistive linearity sensor or push-pull type Y-axis magneto-resistor linear transducer can export at 0 magnetic field, is
Reach this purpose, interconnect straightway of the wire by rectilinear form, or zigzag section, the curved structure as shown in Fig. 1 16
To increase resistance, so as to obtain identical interconnection resistance.
Fig. 9-12 is+X ,-X ,+Y ,-Y the magneto-resistor linear sensing cell array of twin shaft magneto-resistor linear transducer shown in Fig. 1
Distribution map, in order to ensure+the X of X push-pull type magneto-resistor linear transducers and Y push-pull type magneto-resistor linear transducers ,-X ,+Y ,-
The distribution of Y magneto-resistors sensing unit array has identical geometric center, and distributed architecture shown in Fig. 9 is+Y/+X/-X/-Y, Tu10Suo
It is-Y/+X/-X/+Y to show distributed architecture, and distributed architecture shown in Figure 11 is+Y/-X/+X/-Y, and distributed architecture shown in Figure 12 is-Y/-
X/+X/+Y, wherein the magneto-resistor bridge arm arranged adjacent with the identical direction of magnetization, so as to laser program control operation.
Preferred embodiment of the present utility model is the foregoing is only, is not limited to the utility model, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all in the spirit and principles of the utility model
Within, any modification, equivalent substitution and improvements made etc., it should be included within the scope of protection of the utility model.
Claims (11)
1. a kind of single-chip twin shaft magneto-resistor linear transducer, including substrate on X-Y plane, on the substrate
Push-pull type X-axis magneto-resistor linear transducer and push-pull type Y-axis magneto-resistor linear transducer, the push-pull type X-axis magneto-resistor are linear
Sensor includes X push arms and X draws bow, and the push-pull type Y-axis magneto-resistor linear transducer includes Y push arms and Y draws bow, and the X is pushed away
Arm, X are drawn bow, Y push arms and Y are drawn bow respectively including at least one magnetic-field-sensitive direction edge+X ,-X ,+Y, the magneto-resistor of -Y direction
Linear sensing cell array, the magneto-resistor linear sensing cell array are made up of at least one magneto-resistor linear sensing unit,
Characterized in that,
The push-pull type X-axis magneto-resistor linear transducer and the push-pull type Y-axis magneto-resistor linear transducer have jointly several
What center,
The magneto-resistor linear sensing unit is MTJ cell, and the magneto-resistor linear sensing unit has identical magnetic multi-layer thin
Membrane structure, the magnetic multi-layer film structure include Seed Layer, lower electrode layer, inverse ferric magnetosphere, pinning layer, Ru layers, ginseng from bottom to top
Layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer and passivation layer are examined, or includes Seed Layer, lower electricity from bottom to top
Pole layer, inverse ferric magnetosphere, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer and passivation layer,
The inverse ferric magnetosphere direction of magnetization is obtained by laser program-controlled heating magnetic anneal, has the magneto-resistor line of the identical direction of magnetization
Property sensing unit array is disposed adjacent, with heat-insulated between the magneto-resistor linear sensing cell array with different magnetic-field-sensitives
Gap,
The nonmagnetic intermediate layer is Al2O3Or MgO, the magnetic bias layer are that hard magnetic layer, another inverse ferric magnetosphere or synthesis are anti-
Ferromagnetic layer structure, the passivation layer are the material to laser-light transparent,
The either above or below of the linear magnetoresistance sensing unit or the linear magnetoresistance sensing unit array is provided with
Soft magnetism flux decline device.
A kind of 2. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the magneto-resistor
Linear sensing unit has rectangular middle part and is located at middle part respectively for oval or described magneto-resistor linear sensing unit
The both ends triangular in shape or fan-shaped of opposite sides；Form the major axis edge for the magneto-resistor linear sensing unit that X push arms and X draw bow
Y direction, short axle is along X-direction；The major axis for the magneto-resistor linear sensing unit that Y push arms and Y draw bow is formed along X-direction, it is short
Axle is along Y direction；The direction of magnetization of the reference layer and the free layer is mutually perpendicular to, and has identical magnetic field sensitivity and zero
Field resistance value.
A kind of 3. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the X push arms,
The magneto-resistor linear sensing unit that the X draws bow, the Y push arms and the Y draw bow including identical quantity and with same resistance,
And respective magneto-resistor linear sensing unit forms both ends mouth structure by series, parallel or mixing connection in series-parallel.
A kind of 4. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the push-pull type
The reference layer direction of magnetization and the push-pull type Y-axis magneto-resistor of the magneto-resistor linear sensing unit of X-axis magneto-resistor linear transducer
The angular range of the reference layer direction of magnetization of the magneto-resistor linear sensing unit of linear transducer is between 85 ° and 95 °.
A kind of 5. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the push-pull type
X magneto-resistors linear transducer and the push-pull type Y magneto-resistors linear transducer are half-bridge, full-bridge or quasi- bridge structure.
A kind of 6. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the magneto-resistor
Arrangement mode is between linear sensing cell array：+ X/-Y/+Y/-X, either+X/+Y/-Y/-X or-X/-Y/+Y/+X, or
Person+X/-Y/+Y/-X.
A kind of 7. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the magneto-resistor
It is attached between linear sensing cell array by interconnecting wire, at least part of interconnection wire has positioned at each described
The zigzag section of magneto-resistor linear sensing unit side, and the zigzag section of the interconnection wire and the magneto-resistor linear sensing unit
The distance of array is more than 15 microns.
8. a kind of single-chip twin shaft magneto-resistor linear transducer according to claim 7, it is characterised in that connection power supply is public
Hold Vs that there is phase with push arm and the interconnection wire drawn bow and the interconnection wire for being connected ground public terminal GND and push arm and drawing bow altogether
Same interconnection resistance, the interconnection wire for connecting signal output common port V+, V- and push arm respectively and drawing bow have identical mutual
Join resistance, there is the interconnection wire straightway or the zigzag section to obtain identical interconnection resistance.
9. a kind of single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the soft magnetism leads to
The material for measuring attenuator is High-magnetic permeability soft magnetic alloy, and the thickness of the High-magnetic permeability soft magnetic alloy is between 5-30 um, the magnetic
Insulation material layer is provided between resistive linearity sensing unit and the soft magnetism flux decline device, the soft magnetism flux decline device is circle
Shape or square；
The soft magnetism flux decline device is located at that the magneto-resistor linear sensing unit is just upper or underface, and with the magneto-resistor
Linear sensing unit is concentric, and the soft magnetism flux decline device diameter or the length of side are more than the length of the magneto-resistor linear sensing unit
Axle,
Or, the soft magnetism flux decline device is located at the surface or underface of the magneto-resistor sensing unit array, and with institute
It is concentric to state magneto-resistor sensing unit array, the soft magnetism flux decline device diameter or the length of side are more than the magneto-resistor sensing unit
The catercorner length of array.
A kind of 10. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the passivation
The surface of layer is provided with ARC；
Institute's passivation layer is Ultra-Violet Laser transparent material, and the Ultra-Violet Laser transparent material includes BCB, Si3N4、Al2O3、HfO2、
AlF3、GdF3、LaF3、MgF2、Sc2O3、HfO2Or SiO2；
Or, the passivation layer is infrared laser transparent material, the infrared laser transparent material include diamond-like carbon film, MgO,
SiN、SiC、AlF3、MgF2、SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7, Si or Ge.
A kind of 11. single-chip twin shaft magneto-resistor linear transducer according to claim 1, it is characterised in that the X-axis magnetic
The power supply of resistive linearity sensor and Y-axis magneto-resistor linear transducer, output pin along sensor chip edge row
Row.
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| CN108089139A (en) * | 2018-01-30 | 2018-05-29 | 江苏多维科技有限公司 | A kind of bipolar switch sensor reset |
| WO2018202085A1 (en) * | 2017-05-04 | 2018-11-08 | 江苏多维科技有限公司 | Monolithic-chip and high-sensitivity type magneto-resistor linear transducer |
| CN115728681A (en) * | 2022-11-15 | 2023-03-03 | 南方电网数字电网研究院有限公司 | Magnetic field sensor, testing method and device thereof, preparation method and computer equipment |
| CN115825826A (en) * | 2022-12-22 | 2023-03-21 | 南方电网数字电网研究院有限公司 | Three-axis full-bridge circuit transformation type linear magnetic field sensor |
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| WO2018202085A1 (en) * | 2017-05-04 | 2018-11-08 | 江苏多维科技有限公司 | Monolithic-chip and high-sensitivity type magneto-resistor linear transducer |
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| CN108089139A (en) * | 2018-01-30 | 2018-05-29 | 江苏多维科技有限公司 | A kind of bipolar switch sensor reset |
| CN108089139B (en) * | 2018-01-30 | 2024-02-27 | 江苏多维科技有限公司 | Double-pole switch sensor capable of resetting |
| EP4089428A4 (en) * | 2020-01-10 | 2024-01-24 | Multidimension Technology Co Ltd | Magnetoresistive sensor with harmonic widened linear range |
| CN115728681A (en) * | 2022-11-15 | 2023-03-03 | 南方电网数字电网研究院有限公司 | Magnetic field sensor, testing method and device thereof, preparation method and computer equipment |
| CN115728681B (en) * | 2022-11-15 | 2023-09-12 | 南方电网数字电网研究院有限公司 | Magnetic field sensor, testing method and device thereof, preparation method and computer equipment |
| CN115825826A (en) * | 2022-12-22 | 2023-03-21 | 南方电网数字电网研究院有限公司 | Three-axis full-bridge circuit transformation type linear magnetic field sensor |
| CN115825826B (en) * | 2022-12-22 | 2023-09-15 | 南方电网数字电网研究院有限公司 | Three-axis full-bridge circuit transformation type linear magnetic field sensor |
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