CN206650644U - Electric power management circuit - Google Patents
Electric power management circuit Download PDFInfo
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- CN206650644U CN206650644U CN201720310022.7U CN201720310022U CN206650644U CN 206650644 U CN206650644 U CN 206650644U CN 201720310022 U CN201720310022 U CN 201720310022U CN 206650644 U CN206650644 U CN 206650644U
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Abstract
A kind of electric power management circuit is the utility model is related to, applied to HEMT, including：First input end, it is connected with the first external power source；Second input, it is connected with the second external power source；First output end, respectively the grid with first input end and HEMT be connected；Second output end, it is connected with the drain electrode of HEMT；Electrifying timing sequence protection module, it is connected respectively with first input end, the second input and the second output end；Electrifying timing sequence protection module; for first input end receive the first external power source input negative voltage and the second input receive the second external power source input positive voltage when; the path between the second input and the second output end is turned on, positive voltage is exported to the drain electrode of HEMT by the second output end.Pass through the technical solution of the utility model, it can be ensured that the correct electrifying timing sequence of HEMT.
Description
Technical field
Electronic technology field is the utility model is related to, in particular it relates to a kind of electric power management circuit.
Background technology
Microwave power amplifier part is one of important component of modern wireless communication systems, its be widely used in radar,
In the systems such as satellite communication, electronics military affairs and navigation.
In recent years, with the fast development of semiconductor technology, the height made using third generation wide bandgap semiconductor GaN material
Electron mobility transistor (High Electron Mobility Transistor, HEMT) is increasingly becoming microwave power amplification
The developing direction of device.Because GaN has the characteristics that high-breakdown-voltage, compared with high electron mobility so that GaN base high electron mobility
Rate transistor compared to first generation semi-conducting material and the transistor of second generation semi-conducting material manufacturing, have high power density,
The advantages such as high efficiency and working band are wide, it is more applicable in military and civilian wireless communication system.
Because GaN base HEMT is a kind of depletion mode transistor, its grid is being not added with the feelings of negative voltage
Fully on state is under condition, if now drain electrode plus positive voltage can cause drain current rapidly to increase and cause the high electricity of GaN base
Transport factor transistor is burnt, therefore certain sequential need to be observed when carrying out electric to GaN base HEMT.
In correlation technique, generally use timesharing powers up mode to electric on GaN base HEMT, i.e., first right
The grid of GaN base HEMT adds negative voltage, then the drain electrode to GaN base HEMT adds positive electricity
Pressure.But which there may be the problems such as gate short, leakage plus grid negative voltage of GaN base HEMT and make
Burnt into GaN base HEMT.
Utility model content
To achieve these goals, the utility model provides a kind of electric power management circuit, brilliant applied to high electron mobility
Body pipe, the electric power management circuit include：First input end, it is connected with the first external power source；Second input, with the second external electrical
Source connects；First output end, respectively the grid with the first input end and the HEMT be connected；Second
Output end, the drain electrode with the HEMT are connected；
Electrifying timing sequence protection module, respectively with the first input end, second input and second output end
Connection；
The electrifying timing sequence protection module, for receiving the first external power source input in the first input end
When negative voltage and second input receive the positive voltage of the second external power source input, second input is turned on
Path between second output end, the positive voltage is exported to the high electronics by second output end and moved
The drain electrode of shifting rate transistor.
Alternatively, the electric power management circuit also includes：
Overvoltage protective module, it is connected respectively with second input and the electrifying timing sequence protection module, in institute
When stating positive voltage and exceeding predetermined voltage threshold, the electrifying timing sequence protection module is controlled by second input and described second
Path cut-off between output end.
Alternatively, the electric power management circuit also includes：3rd input and power modulation module；
3rd input is connected with external pulse signal generator；
One end of the power modulation module is connected with the 3rd input, the other end point of the power modulation module
It is not connected with the electrifying timing sequence protection module and second output end；
The power modulation module, for the external pulse signal generator received according to the 3rd input
The control signal of input controls the on or off of the path between the electrifying timing sequence protection module and second output end.
Alternatively, the electric power management circuit also includes：
First energy-storage module, it is connected respectively with the first input end and first output end, for described first
Electric power storage when input receives the negative voltage of the first external power source input, outside the first input end and described first
When power supply disconnects negative voltage is provided by first output end to the grid of the HEMT.
Alternatively, the electric power management circuit also includes：
Second energy-storage module, be connected respectively with the electrifying timing sequence protection module and the power modulation module, for
Electric power storage when the electrifying timing sequence protection module turns on the path between second input and second output end, Yi Ji
By described when the power modulation module turns on the path between the electrifying timing sequence protection module and second output end
Drain electrode of second output end to the HEMT provides positive voltage.
Alternatively, the electrifying timing sequence protection module includes：
Diode V3, divider resistance R3, divider resistance R5, switch triode V7, FET V9 and diode V5；
The negative pole of the diode V3 is connected with the first input end, and the negative pole of the diode V3 is respectively with described
One output end connects with the emitter stage of the switch triode V7；
The base earth of the switch triode V7, the colelctor electrode of the switch triode V7 pass through the divider resistance R3
It is connected with second input；
The source electrode of the FET V9 is connected with second input, the drain electrode of the FET V9 and described the
Two output ends are connected, and the grid of the FET V9 is grounded by the divider resistance R5；
The positive pole of the diode V5 is connected with the colelctor electrode of the switch triode V7, the negative pole of the diode V5 with
The grid connection of the FET V9.
Alternatively, first energy-storage module includes：Storage capacitor C2；
One end of the storage capacitor C2 is connected with the positive pole of the diode V3 and first output end respectively, described
Storage capacitor C2 other end ground connection.
Alternatively, the overvoltage protective module includes：
Regulator block N1, voltage comparator N2A, divider resistance R14, divider resistance R1, divider resistance R6, divider resistance R7,
Divider resistance R4, switch triode V8 and diode V6；
The input of the regulator block N1 is connected with second input, output end and the electricity of the regulator block N1
Press comparator N2A positive power source terminal connection；
One end of the divider resistance R14 is connected with second input, and the other end of the divider resistance R14 passes through
The divider resistance R1 ground connection；
One end of the divider resistance R6 is connected with the positive power source terminal of the voltage comparator N2A, the divider resistance R6
The other end be grounded by the divider resistance R7；
The first input end of the voltage comparator N2A is grounded by the divider resistance R1, the voltage comparator N2A
The second input be grounded by the divider resistance R7, the output end of the voltage comparator N2A and the switch triode
V8 base stage connection；
The grounded emitter of the switch triode V8, the colelctor electrode of the switch triode V8 pass through the divider resistance
R4 is connected with second input；
The positive pole of the diode V6 is connected with the colelctor electrode of the switch triode V8, the negative pole of the diode V6 with
The grid connection of the FET V9.
Alternatively, the power modulation module includes：
Divider resistance R10, divider resistance R12, current-limiting resistance R13, FET V10, switch triode V11, switch three
Pole pipe V12 and switch triode V13；
The base stage of the switching diode V12 is connected by the divider resistance R12 with the 3rd input, described to open
The colelctor electrode for closing triode V12 is connected by the divider resistance R10 with second input, the switch triode V12
Grounded emitter；
The base stage of the switch triode V13 is connected by the divider resistance R12 with the 3rd input, Yi Jitong
Cross current-limiting resistance R13 ground connection；The colelctor electrode of the switch triode V13 is connected with the grid of the FET V10；It is described to open
Close triode V13 grounded emitter；
The source electrode of the FET V10 is connected with the drain electrode of the FET V9, the drain electrode of the FET V10
It is connected with second output end；
The base stage of the switch triode V11 is connected with the colelctor electrode of the switch triode V12, the switch triode
V11 colelctor electrode is connected with second input, the emitter stage of the switch triode V11 and the switch triode V13
Colelctor electrode connection.
Alternatively, second energy-storage module includes：Storage capacitor C4；
One end of the storage capacitor C4 respectively with the FET V9 drain electrode and the FET V10 source electrode
Connection, the other end ground connection of the storage capacitor.
The technical scheme provided by the utility model embodiment can include the following benefits：It can avoid in high electricity
Drain electrode of the grid of transport factor transistor without negative voltage or during gate short to HEMT adds positive voltage
And cause HEMT to burn, ensure that the correct electrifying timing sequence of HEMT.
Other feature and advantage of the present utility model will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is to be further understood for providing to of the present utility model, and a part for constitution instruction, and following
Embodiment be used to explain the utility model together, but do not form to limitation of the present utility model.In the accompanying drawings：
Fig. 1 is I-V output characteristic curve of the HEMT under different grid voltages；
Fig. 2 is a kind of structural representation of electric power management circuit according to an exemplary embodiment；
Fig. 3 is a kind of structural representation of electric power management circuit according to another exemplary embodiment；
Fig. 4 is a kind of circuit diagram of electric power management circuit according to an exemplary embodiment；
Fig. 5 is a kind of circuit diagram of electric power management circuit according to another exemplary embodiment；
Fig. 6 is a kind of circuit diagram of electric power management circuit according to another exemplary embodiment.
Embodiment
Specific embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.It should be appreciated that herein
Described embodiment is merely to illustrate and explained the utility model, is not limited to the utility model.
Fig. 1 is I-V output characteristic curve of the HEMT under different grid voltages.As shown in figure 1, IDS
For the drain current of HEMT, VDSFor drain voltage, ImaxFor maximum drain current, IdssDrained for saturation electric
Stream, VkneeFor knee voltage, VBRFor highest breakdown voltage.
For depletion high electron mobility transistors, when its grid does not add negative voltage at HEMT
In fully on state.Now, if its drain electrode, which adds positive voltage, can cause drain current IDSRapidly increase, so as to cause high electronics
Mobility transistor burns.
When the grid of HEMT adds negative voltage, HEMT closes with it
The positive voltage increase that drain electrode adds, when reaching turn on voltage threshold, HEMT turns on, its drain current IDS
Gradually increase, its power output PoutGradually increase, but as drain electrode positive voltage VDSMore than highest breakdown voltage VBRWhen, it drains
Electric current IDSIt will increased dramatically, it will cause HEMT breakdown.
Fig. 2 is a kind of structural representation of electric power management circuit according to an exemplary embodiment, wherein, the power supply
Management circuit is applied to HEMT.As shown in Fig. 2 the electric power management circuit includes：First input end, first
Output end, the second input, the second output end and electrifying timing sequence protection module 110.
Wherein, first input end, it is connected with the first external power source；Second input, it is connected with the second external power source；First
Output end, respectively the grid G with first input end and HEMT 200 be connected；Second output end, with high electronics
The drain D connection of mobility transistor 200；Electrifying timing sequence protection module 110, respectively with first input end, the second input and
Second output end connects.
In embodiment of the present utility model, the first external power source and the second external power source can be D.C. regulated power supply.
In one embodiment, the first external power source can provide -5V negative voltage so that the exportable -5V of the first output end negative voltage
To the grid of HEMT；Second external power source can provide+12V positive voltage.
The negative voltage of the first external power source input is received in first input end and the second input is received outside second
During the positive voltage of power input, the negative voltage is exported to the grid G of HEMT 200 by the first output end；
Meanwhile electrifying timing sequence protection module 110 turns on the path between the second input and the second output end, positive voltage is passed through the
Two output ends are exported to the leakage D poles of HEMT 200.
By the technical scheme of the present embodiment, grid in HEMT can be avoided without negative voltage or
Drain electrode during from gate short to HEMT adds positive voltage and causes HEMT to burn, so as to
It ensure that the correct electrifying timing sequence of HEMT.
In another embodiment, as shown in figure 3, the electric power management circuit can also include：Overvoltage protective module 120.
Wherein, overvoltage protective module 120, it is connected respectively with the second input and electrifying timing sequence protection module 110, for when the second input
When the positive voltage that termination receives exceedes predetermined voltage threshold, electrifying timing sequence protection module 110 is controlled by the second input and second
Path cut-off between output end, so that positive voltage can not be exported by the second output end to HEMT 200
Drain D.
Thus, while the correct electrifying timing sequence of high electron mobility is ensured, high electron mobility crystal can be avoided
The drain electrode positive voltage of pipe is excessive and causes HEMT breakdown, realizes to HEMT
Drain overvoltage protection.
In another embodiment, as shown in figure 3, the electric power management circuit also includes：3rd input and power modulation
Module 130.Wherein, the 3rd input is connected with external pulse signal generator；One end of power modulation module 130 and the 3rd defeated
Enter end connection, its other end is connected with the output end of electrifying timing sequence protection module 110 and second respectively.
Power modulation module 130, for the control of the external pulse signal generator input received according to the 3rd input
The on or off of path between signal control electrifying timing sequence protection module 110 and the second output end processed.Of the present utility model
In embodiment, the control signal of external pulse signal generator input can be d. c. voltage signal or Transistor-Transistor Logic level signal.
When the control signal that external pulse signal generator is inputted by the 3rd input is high level signal, power supply is adjusted
Molding block 130 then turns on the path between electrifying timing sequence protection module 110 and the second output end, so that the second input receives
To the second external power source input positive voltage can be exported through the second output end to the drain D of HEMT 200.
When the control signal that external pulse signal generator is inputted by the 3rd input is low level signal or negative voltage
Signal, either the 3rd input terminal shortcircuit or during open circuit, power modulation module 130 is by electrifying timing sequence protection module 110 and second
Path cut-off between output end, so that the positive voltage for the second external power source input that the second input receives can not be through second
Output end is exported to the drain D of HEMT 200.
Thus, it is possible to control signal is inputted to realize that high electronics moves to the 3rd input by external pulse signal generator
Two kinds of mode of operations of continuous and pulse of the drain electrode positive voltage of shifting rate transistor.
In another embodiment, as shown in figure 3, the electric power management circuit also includes：First energy-storage module 140.Wherein,
First energy-storage module 140 is connected with first input end and the first output end respectively.
First energy-storage module 140, for first input end receive the first external power source input negative voltage when carry out
Electric power storage, and when first input end and the first external power source disconnect by the first output end to HEMT
200 grid G provides negative voltage.
Thus, it is possible to first input end power down or it is short-circuit when make the grid of HEMT remain to keep
Negative voltage and retention time are more than the input time of its positive voltage that drains, so as to avoid first input end power down or short circuit
The HEMT excessively stream that moment may occur burns phenomenon.
In another embodiment, as shown in figure 3, the electric power management circuit can also include：Second energy-storage module 150.
Wherein, the second energy-storage module 150 is connected with electrifying timing sequence protection module 110 and power modulation module 130 respectively.
Second energy-storage module 150, for being turned in electrifying timing sequence protection module 110 between the second input and the second output end
Path when electric power storage, and turn on the path between electrifying timing sequence protection module 110 and the second output end in power modulation module 130
When by drain D from the second output end to HEMT 200 provide positive voltage.
Thus, it is possible to electric power management circuit is stored under pulse working mode needed for the drain electrode of HEMT
Positive voltage, reduce HEMT to the second external power source export positive voltage Capability Requirement.
Fig. 4 is a kind of circuit diagram of electric power management circuit according to an exemplary embodiment, wherein, power management electricity
Road is applied to HEMT.As shown in figure 4, in this embodiment, the electric power management circuit includes the first input
End, the second input, the first output end, the second output end and electrifying timing sequence protection module 110.
Electrifying timing sequence protection module 110 specifically includes：Diode V3, divider resistance R3, divider resistance R5, switch triode
V7, FET V9 and diode V5.
Wherein, diode V3 negative pole is connected with first input end, diode V3 negative pole respectively with the first output end and
Switch triode V7 emitter stage connection；Switch triode V7 base earth, switch triode V7 colelctor electrode pass through partial pressure
Resistance R3 is connected with the second input；FET V9 source electrode is connected with the second input, FET V9 drain electrode and the
Two output ends are connected, and FET V9 grid is grounded by divider resistance R5；Diode V5 positive pole and switch triode V7
Colelctor electrode connection, diode V5 negative pole is connected with FET V9 grid.
In this embodiment, FET V9 is P-channel field-effect transistor (PEFT) pipe, and switch triode V7 can be on off state
NPN type triode, divider resistance R5 resistance are 10 times of divider resistance R3 resistance.
When the second input receives the positive voltage of the second external power source input, if first input end first input end connects
Receive between positive voltage or first input end and the first external power source when there is short circuit, short circuit, diode V3 cut-offs,
Exported without negative voltage by the first output end to the grid of HEMT, and switch triode V7 emitter stage
Ground connection, switch triode V7 base stage and emitter stage are not turned on, now switch triode V7 current collection extremely high level, diode
V5 is turned on, and the second input forms loop, grid of its partial pressure to FET V9 with divider resistance R3 and divider resistance R5.
Thus, FET V9 gate voltage valuesFET V9 source electrode electricity
Pressure value VS9=Vds, wherein, VG9For FET V9 gate voltage values, VS9For FET V9 source voltage values, VdsFor
Second input receives the positive voltage value of the second external power source input, R3For divider resistance R3 resistance, R5For divider resistance R5
Resistance.
Because the pressure difference between FET V9 grid voltage and source voltage is smaller, not up to it opens threshold value electricity
Pressure, FET V9 disconnect, and the positive voltage for the second external power source input that the second input receives can not pass through the second output
End is exported to the drain electrode of HEMT.
When first input end receives the negative voltage of the first external power source input, diode V3 conductings, the side of negative voltage one
The output end of face first is exported to the grid of HEMT, is on the other hand delivered to switch triode V7 transmitting
Pole, switch triode V7 base stage and emitter stage conducting, switch triode V7 colelctor electrode are pulled down to low level, diode V5
Cut-off.Now, FET V9 source voltage values VS9=Vds, FET V9 gate voltage values VG9=0, FET
Pressure difference between V9 source voltage and grid voltage exceedes its turn-on threshold voltage, FET V9 conductings, the second input termination
The positive voltage of the second external power source input received can be exported through the second output end to the drain electrode of HEMT.
Electrifying timing sequence protection module 120 can also include：Voltage-regulator diode V1 with pressure stabilization function, there is filtering and resist
The electric capacity C3 and current-limiting resistance R2 of interference effect.Wherein, voltage-regulator diode V1 negative pole is connected with the second input, its positive pole
Ground connection；Electric capacity C3 one end is connected with diode V3 positive pole and the first output end respectively, its other end ground connection；Current-limiting resistance R2
One end be connected with first input end, its other end is connected with switch triode V7 emitter stage.
By the technical scheme of the present embodiment, grid in HEMT can be avoided without negative voltage or
Drain electrode during from gate short to HEMT adds positive voltage and causes HEMT to burn, so as to
It ensure that the correct electrifying timing sequence of HEMT.
Further, since diode V3 has one-way conduction, the first external power source can be missed by first input end defeated
Enter the abnormal condition such as positive voltage and first input end open circuit, short circuit to be isolated, avoid HEMT
Grid sustain damage.
In another embodiment, as shown in figure 5, the electric power management circuit also includes：Overvoltage protective module 120.Overvoltage
Protection module 120 specifically includes：Regulator block N1, voltage comparator N2A, divider resistance R14, divider resistance R1, divider resistance R6,
Divider resistance R7, divider resistance R4, switch triode V8 and diode V6.
Wherein, regulator block N1 input is connected with the second input, regulator block N1 output end and voltage comparator N2A
Positive power source terminal connection；Divider resistance R14 one end is connected with the second input, and the divider resistance R14 other end passes through partial pressure
Resistance R1 is grounded；Divider resistance R6 one end is connected with voltage comparator N2A positive power source terminal, and the divider resistance R6 other end leads to
Cross divider resistance R7 ground connection；Voltage comparator N2A first input end is grounded by divider resistance R1, voltage comparator N2A's
Second input is grounded by divider resistance R7, and voltage comparator N2A output end is connected with switch triode V8 base stage；Open
Triode V8 grounded emitter is closed, switch triode V8 colelctor electrode is connected by divider resistance R4 with the second input；Two
Pole pipe V6 positive pole is connected with switch triode V8 colelctor electrode, and diode V6 negative pole is connected with FET V9 grid.
In this embodiment, switch triode V8 can be the NPN type triode on off state, divider resistance R4's
Resistance is 1/10 of divider resistance R5 in electrifying timing sequence protection module 110.
When first input end receive the first external power source input negative voltage and the second input receive outside second
During the positive voltage of power input, the FET V9 conductings in electrifying timing sequence protection module 110.Second input receives just
Output is voltage ratio to voltage comparator N2A positive power source terminal after on the one hand positive voltage that voltage is converted to 5V through regulator block N1
Powered compared with device N2A；On the other hand the positive voltage that second input receives is formed back by divider resistance R14 and divider resistance R1
Road.Voltage comparator N2A first input end Y is received by divider resistance R1 and divider resistance R14 to the second input
The positive voltage of second external power source input enters the sampling of line amplitude partial pressure, shown in sample voltage value such as formula (1).
Shown in voltage comparator N2A the second input X reference voltage level such as formula (2).
In formula, Vf1For voltage comparator N2A first input end Y sample voltage value；Vf2For voltage comparator N2A's
Second input X reference voltage level；R1、R14、R6And R7Respectively divider resistance R1, divider resistance R14, divider resistance R6 and
Divider resistance R7 resistance.
Voltage comparator N2A is compared first input end Y sample voltage value and the second input X reference voltage level
Compared with according to the corresponding voltage signal of comparative result output.
It should be noted that in embodiment of the present utility model, can by set divider resistance R14, divider resistance R1,
Divider resistance R6 and divider resistance R7 resistance set the voltage threshold V of the drain electrode of HEMTth。
If positive voltage VdsLess than predetermined voltage threshold Vth, voltage comparator N2A first input end Y sampled voltage
Vf1Less than the second input X reference voltage Vf2(Vf1For Vf290 percent five), voltage comparator N2A output end is defeated
Go out high level to switch triode V8 base stage, switch triode V8 base stage and emitter stage to turn on, switch triode V8 collection
Electrode is pulled down to low level, diode V6 cut-offs.The positive voltage one for the second external power source input that second input receives
Aspect is exported to FET V9 source electrode, is on the other hand grounded through divider resistance R4, and FET V9 grid passes through partial pressure
Resistance R5 is grounded, FET V9 grid voltage VG9=0, its source voltage VS9=Vds, FET V9 is held on shape
State, the positive voltage that the second input receives can be exported by the second output end to the drain electrode of HEMT.
If the positive voltage V that the second input receivesdsMore than predetermined voltage threshold Vth, the first of voltage comparator N2A be defeated
Enter to hold Y sampled voltage Vf1More than the second input X reference voltage Vf2, voltage comparator N2A output end output low level is extremely
Switch triode V8 base stage, switch triode V8 base stage and emitter stage are not turned on, and switch triode V8 collector voltage is
High level, diode V6 conductings.On the one hand the positive voltage that second input receives is exported to FET V9 source electrode, the opposing party
Face forms loop, FET V9 grid voltage through divider resistance R4 and divider resistance R5
Its source voltage VS9=Vds, FET V9 grid voltage and the pressure difference of source voltage are not up to and open FET V9's
Threshold voltage, FET V9 disconnect, and the positive voltage that the second input receives can not export paramount electricity by the second output end
The drain electrode of transport factor transistor.
In addition, the overvoltage protective module 120 also includes：Electric capacity C1, current-limiting resistance R8 with filtering and Anti-Jamming
With current-limiting resistance R9.Wherein, electric capacity C1 one end is connected with regulator block N1 output end, its other end ground connection；The one of resistance R9
End is connected with switch triode V8 base stage, and its other end is connected with voltage comparator N2A output end；Resistance R8 one end with
Voltage comparator N2A positive power source terminal connection, its other end are connected with voltage comparator N2A output end.
By the technical scheme of the present embodiment, while the correct electrifying timing sequence of high electron mobility is ensured, can keep away
The drain electrode positive voltage for exempting from HEMT is excessive and causes HEMT breakdown, realizes to height
The overvoltage protection of electron mobility transistor.
In another embodiment, as shown in fig. 6, the electric power management circuit also includes the 3rd input and power modulation mould
Block 130.Power modulation module 130 specifically includes：Divider resistance R10, divider resistance R12, current-limiting resistance R13, FET
V10, switch triode V11, switch triode V12 and switch triode V13.
Wherein, switching diode V12 base stage is connected by divider resistance R12 with the 3rd input, switch triode V12
Colelctor electrode be connected by divider resistance R10 with the second input, switch triode V12 grounded emitter；Switch triode
V13 base stage is connected by divider resistance R12 with the 3rd input, and is grounded by current-limiting resistance R13；Switch triode
V13 colelctor electrode is connected with FET V10 grid；Switch triode V13 grounded emitter；FET V10 source
Pole is connected with FET V9 drain electrode, and FET V10 drain electrode is connected with the second output end；Switch triode V11 base
Pole is connected with switch triode V12 colelctor electrode, and switch triode V11 colelctor electrode is connected with the second input, switchs three poles
Pipe V11 emitter stage is connected with switch triode V13 colelctor electrode.
In this embodiment, switch triode V11, switch triode V12 and switch triode V13 can be in switch
The NPN type triode of working condition, FET V10 are P-channel field-effect transistor (PEFT) pipe.
When first input end receive the first external power source input negative voltage and the second input receive outside second
When the positive voltage of power input is less than predetermined voltage threshold, on the one hand the negative voltage exports paramount electronics by the first output end and moved
The grid of shifting rate transistor carries out voltage division processing, and switch triode V7 emitter stage is on the other hand added by current-limiting resistance R2.
Now, switch triode V7 base stage to emitter stage is turned on, and its collector voltage is pulled down to low level, and diode V5 is cut
Only.
In the case where diode V5 ends, if the positive voltage that now the second input receives is more than predeterminated voltage threshold
It is worth, then voltage comparator N2A first input end Y sampled voltage Vf1More than its second input X reference voltage Vf2, electricity
Comparator N2A output end output low level is pressed, switch triode V8 base stage to emitter stage is not turned on, the extremely high electricity of its current collection
It is flat, diode V6 conductings.Now, FET V9 grid voltage is less than with the pressure difference between its source voltage opens threshold value electricity
Pressure, FET V9 are disconnected, and the positive voltage that the second input receives can not be exported to high electron mobility by the second output end
The drain electrode of transistor, thus achieve the overvoltage protection of the drain electrode to HEMT.
The positive voltage that second input receives is less than the first input end of predetermined voltage threshold, then voltage comparator N2A
Sampled voltage Vf1Less than the reference voltage V of its second inputf2(Vf1For Vf290 percent five), voltage comparator N2A
High level is exported, switch triode V8 base stage to emitter stage turns on, and its colelctor electrode is pulled down to low level, and diode V6 is cut
Only.Now, FET V9 grid is grounded by resistance R5, and its grid voltage exceedes with the pressure difference between its source voltage to be opened
Threshold voltage, FET V9 conductings are opened, the positive voltage that the second input receives can pass through the second output end and export paramount electronics
The drain electrode of mobility transistor, thus achieve the correct electrifying timing sequence to HEMT.
When first input end receives negative voltage and the second input receives the positive voltage less than predetermined voltage threshold,
FET V9 is turned on.Now, if short circuit between external pulse signal generator and the 3rd input, open circuit, or outside
The control signal of portion pulse signal generator input be low level signal or negative voltage signal, switch triode V12 base stage and
Emitter stage is not turned on, and switch triode V13 base stage and emitter stage are not turned on, switch triode V12 colelctor electrode and switch three
Pole pipe V13 colelctor electrode is in high-impedance state, and switch triode V11 base stage turns on emitter stage.Second input receives just
On the one hand voltage flows to FET V10 grid by divider resistance R10 and switch triode V11, on the other hand then pass through
The FET V9 of conducting flows to FET V10 source electrode, and FET V10 grid voltage and the pressure difference of source voltage are not
Reach its turn-on threshold voltage, FET V10 disconnects, and the positive voltage that the second input receives can not pass through the second output end
Export to the drain electrode of HEMT.
If the control signal that the 3rd input receives the input of external pulse signal generator is high level signal, switch
Triode V12 base stage and switch triode V13 base stage connect high level by divider resistance R12, switch triode V12's
Base stage turns on emitter stage, and switch triode V13 base stage turns on emitter stage, switch triode V11 base stage and emitter stage
It is not turned on.The positive voltage that second input receives flows to FET V10 source electrode by the FET V9 of conducting, with opening
The grid voltage for closing the FET V10 of triode V13 colelctor electrode connection is pulled to low level, so that FET V10
Source voltage VS9=Vds, FET V10 conductings, the positive voltage that the second input receives can be defeated by the second output end
Go out to the drain electrode of HEMT.
Power modulation module 130 can also include：Current-limiting resistance R11 with metering function, with filtering and it is anti-interference
The electric capacity C5 and electric capacity C6 of effect.Wherein, current-limiting resistance R11 one end is connected with switch triode V11 colelctor electrode, and its is another
End is connected with the second input；Electric capacity C5 one end is connected with switch triode V11 colelctor electrode, its other end ground connection；Electric capacity
C6 is in parallel with divider resistance R12.
By the technical scheme of the present embodiment, the 3rd input can be inputted by external pulse signal generator and controlled
Signal come realize HEMT drain electrode positive voltage two kinds of mode of operations of continuous and pulse.
In another embodiment, as shown in fig. 6, power modulation module 130 can also include：Diode V4.Wherein, two
Pole pipe V4 positive pole is connected with the 3rd input, its negative pole by divider resistance R12 respectively with switch triode V12 base stage and
Switch triode V13 base stage connection.
When the control signal that external pulse signal generator is inputted by the 3rd input is low level signal or negative electricity
Press signal or the 3rd input terminal shortcircuit or open circuit when, because diode V4 has one-way conduction, these four states by every
From so that the 3rd input could be by three poles of switch triode V12 and switch only when receiving the control signal of high level
Pipe V13 is turned on so that switch triode V11 is operated in cut-off state, and V13 is saturation state, and its collector voltage is pulled down to low
Level, so as to turn on FET V10 so that the drain electrode of HEMT has positive voltage input.
In another embodiment, as shown in fig. 6, electric power management circuit can also include：Current Limiting Diodes V16.Wherein,
Current Limiting Diodes V16 positive pole is connected with the second input, and Current Limiting Diodes V16 negative pole connects with voltage-regulator diode V1 negative pole
Connect.
For Current Limiting Diodes V16 in addition to each element in electrifying timing sequence protection module carries out overcurrent protection, its is unidirectional
Conduction can also be isolated to the second external power source by the negative voltage of the second input erroneous input, and avoid the second input
The HEMT caused by abnormal condition such as open circuit, short circuit is held to damage, so as to protect high electron mobility brilliant
The drain electrode of body pipe.
In another embodiment, as shown in fig. 6, the electric power management circuit also includes：First energy-storage module 140.First
Energy-storage module 140 specifically includes：Storage capacitor C2.
Wherein, storage capacitor C2 one end is connected with diode V3 positive pole and the first output end respectively, storage capacitor C2
The other end ground connection.
When first input end receives the negative voltage of the first external power source input, diode V3 conductings, storage capacitor C2
Start electric power storage.After the completion of electric power storage, storage capacitor C2 is discharged, and is on the one hand exported negative voltage by the first output end paramount
The grid of electron mobility transistor, on the other hand negative voltage is exported to switch triode V7 emitter stage.
Storage capacitor C2 can be opened a way in first input end due to its energy storage characteristic or be remained to move to high electronics when short-circuit
The grid of shifting rate transistor provides negative voltage and the retention time is more than the input time of its positive voltage that drains, so as to avoid first
The drain electrode for the HEMT that input is opened a way or the moment of short circuit may occur adds positive voltage and causes it
The phenomenon that excessively stream is burnt occurs.
In another embodiment, as shown in fig. 6, the electric power management circuit also includes：Second energy-storage module 150.Second
Energy-storage module 150 specifically includes：Storage capacitor C4.
Wherein, drain electrode of the storage capacitor C4 one end respectively with FET V9 source electrode and FET V10 is connected, storage
Energy electric capacity C4 other end ground connection.
When sequence protection module 110 turns on the path between the second input and the second output end upon power-up, that is, field effect
Should pipe V9 conducting when, storage capacitor C4 carry out electric power storage；When the FET V10 conductings in power modulation module 130, energy storage electricity
Positive voltage can be provided by drain electrode of second output end to HEMT by holding C4.
Thus, storage capacitor C4 can store electric power management circuit HEMT under pulse working mode
Drain electrode needed for positive voltage, reduce HEMT to the second external power source export positive voltage Capability Requirement.
Storage capacitor C4 capacity can be obtained by formula (3).
In formula, IpFor peak impulse voltage (unit：A)；TpFor pulse width (unit：uS)；VdsFor the second input termination
Positive voltage (the unit of the second external power source input received:V)；Allow minimum for circuit；C is storage capacitor
C4 capacitance (unit：uF).
It should be noted that in embodiment of the present utility model, FET V9 and FET V10 can also be N
Channel field-effect pipe, switch triode V7, V8, V10, V11, V12 and V13 may be replaced by the integrated drive with identical function
The connected mode of dynamic chip, diode V5 and diode V6 docking could alternatively be OR circuit etc..Power management electricity after replacement
Connected mode in road between each element accordingly changes, and no longer describes in detail herein.
Preferred embodiment of the present utility model, still, the utility model and unlimited is described in detail above in association with accompanying drawing
Detail in above-mentioned embodiment, can be to skill of the present utility model in range of the technology design of the present utility model
Art scheme carries out a variety of simple variants, and these simple variants belong to the scope of protection of the utility model.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, the utility model is to each
The possible combination of kind no longer separately illustrates.
In addition, it can also be combined between a variety of embodiments of the present utility model, as long as it is not disobeyed
Thought of the present utility model is carried on the back, it should equally be considered as content disclosed in the utility model.
Claims (10)
- A kind of 1. electric power management circuit, applied to HEMT, it is characterised in that including：First input end, it is connected with the first external power source；Second input, it is connected with the second external power source；First output end, respectively the grid with the first input end and the HEMT be connected；Second output end, the drain electrode with the HEMT are connected；Electrifying timing sequence protection module, it is connected respectively with the first input end, second input and second output end；The electrifying timing sequence protection module, for receiving the negative electricity of the first external power source input in the first input end When pressure and second input receive the positive voltage of the second external power source input, second input and institute are turned on The path between the second output end is stated, the positive voltage is exported to the high electron mobility by second output end The drain electrode of transistor.
- 2. electric power management circuit according to claim 1, it is characterised in that the electric power management circuit also includes：Overvoltage protective module, be connected respectively with second input and the electrifying timing sequence protection module, for it is described just When voltage exceedes predetermined voltage threshold, the electrifying timing sequence protection module is controlled by second input and the described second output Path cut-off between end.
- 3. electric power management circuit according to claim 2, it is characterised in that the electric power management circuit also includes：3rd Input and power modulation module；3rd input is connected with external pulse signal generator；One end of the power modulation module is connected with the 3rd input, the other end of the power modulation module respectively with The electrifying timing sequence protection module connects with second output end；The power modulation module, for the external pulse signal generator input received according to the 3rd input Control signal control the on or off of the path between the electrifying timing sequence protection module and second output end.
- 4. electric power management circuit according to claim 3, it is characterised in that the electric power management circuit also includes：First energy-storage module, it is connected respectively with the first input end and first output end, in the described first input Electric power storage when termination receives the negative voltage of the first external power source input, in the first input end and first external power source During disconnection negative voltage is provided by first output end to the grid of the HEMT.
- 5. electric power management circuit according to claim 4, it is characterised in that the electric power management circuit also includes：Second energy-storage module, it is connected respectively with the electrifying timing sequence protection module and the power modulation module, for described Electric power storage when electrifying timing sequence protection module turns on the path between second input and second output end, and described Power modulation module passes through described second when turning on the path between the electrifying timing sequence protection module and second output end Drain electrode of the output end to the HEMT provides positive voltage.
- 6. electric power management circuit according to claim 5, it is characterised in that the electrifying timing sequence protection module includes：Diode V3, divider resistance R3, divider resistance R5, switch triode V7, FET V9 and diode V5；The negative pole of the diode V3 is connected with the first input end, and the negative pole of the diode V3 is defeated with described first respectively Go out end to connect with the emitter stage of the switch triode V7；The base earth of the switch triode V7, the colelctor electrode of the switch triode V7 pass through the divider resistance R3 and institute State the connection of the second input；The source electrode of the FET V9 is connected with second input, the drain electrode of the FET V9 and described second defeated Go out end connection, the grid of the FET V9 is grounded by the divider resistance R5；The positive pole of the diode V5 is connected with the colelctor electrode of the switch triode V7, the negative pole of the diode V5 with it is described FET V9 grid connection.
- 7. electric power management circuit according to claim 6, it is characterised in that first energy-storage module includes：Energy storage electricity Hold C2；One end of the storage capacitor C2 is connected with the positive pole of the diode V3 and first output end respectively, the energy storage Electric capacity C2 other end ground connection.
- 8. electric power management circuit according to claim 6, it is characterised in that the overvoltage protective module includes：Regulator block N1, voltage comparator N2A, divider resistance R14, divider resistance R1, divider resistance R6, divider resistance R7, partial pressure Resistance R4, switch triode V8 and diode V6；The input of the regulator block N1 is connected with second input, output end and the voltage ratio of the regulator block N1 Positive power source terminal connection compared with device N2A；One end of the divider resistance R14 is connected with second input, and the other end of the divider resistance R14 passes through described Divider resistance R1 is grounded；One end of the divider resistance R6 is connected with the positive power source terminal of the voltage comparator N2A, and the divider resistance R6's is another One end is grounded by the divider resistance R7；The first input end of the voltage comparator N2A is grounded by the divider resistance R1, and the of the voltage comparator N2A Two inputs are grounded by the divider resistance R7, and the output end of the voltage comparator N2A is with the switch triode V8's Base stage connects；The grounded emitter of the switch triode V8, the colelctor electrode of the switch triode V8 by the divider resistance R4 with The second input connection；The positive pole of the diode V6 is connected with the colelctor electrode of the switch triode V8, the negative pole of the diode V6 with it is described FET V9 grid connection.
- 9. electric power management circuit according to claim 8, it is characterised in that the power modulation module includes：Divider resistance R10, divider resistance R12, current-limiting resistance R13, FET V10, switch triode V11, switch triode V12 and switch triode V13；The base stage of the switching diode V12 is connected by the divider resistance R12 with the 3rd input, the switch three Pole pipe V12 colelctor electrode is connected by the divider resistance R10 with second input, the hair of the switch triode V12 Emitter grounding；The base stage of the switch triode V13 is connected by the divider resistance R12 with the 3rd input, and passes through limit Leakage resistance R13 is grounded；The colelctor electrode of the switch triode V13 is connected with the grid of the FET V10；The switch three Pole pipe V13 grounded emitter；The source electrode of the FET V10 is connected with the drain electrode of the FET V9, the drain electrode of the FET V10 and institute State the connection of the second output end；The base stage of the switch triode V11 is connected with the colelctor electrode of the switch triode V12, the switch triode V11 Colelctor electrode be connected with second input, the emitter stage of the switch triode V11 and the switch triode V13 collection Electrode connects.
- 10. electric power management circuit according to claim 9, it is characterised in that second energy-storage module includes：Energy storage electricity Hold C4；One end of the storage capacitor C4 connects with the drain electrode of the FET V9 and the source electrode of the FET V10 respectively Connect, the other end ground connection of the storage capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720310022.7U CN206650644U (en) | 2017-03-27 | 2017-03-27 | Electric power management circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720310022.7U CN206650644U (en) | 2017-03-27 | 2017-03-27 | Electric power management circuit |
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| CN206650644U true CN206650644U (en) | 2017-11-17 |
Family
ID=60279042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201720310022.7U Withdrawn - After Issue CN206650644U (en) | 2017-03-27 | 2017-03-27 | Electric power management circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947742A (en) * | 2017-12-11 | 2018-04-20 | 湖南时变通讯科技有限公司 | A kind of sequential protection circuit for being used to control depletion type power device |
| CN108446204A (en) * | 2018-03-30 | 2018-08-24 | 联想(北京)有限公司 | A kind of chip and electronic equipment |
| CN109188941A (en) * | 2018-09-14 | 2019-01-11 | 北京空间机电研究所 | The hard sequential control circuit of space remote sensing camera CCD power supply |
-
2017
- 2017-03-27 CN CN201720310022.7U patent/CN206650644U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947742A (en) * | 2017-12-11 | 2018-04-20 | 湖南时变通讯科技有限公司 | A kind of sequential protection circuit for being used to control depletion type power device |
| CN108446204A (en) * | 2018-03-30 | 2018-08-24 | 联想(北京)有限公司 | A kind of chip and electronic equipment |
| CN108446204B (en) * | 2018-03-30 | 2021-09-14 | 联想(北京)有限公司 | Chip and electronic equipment |
| CN109188941A (en) * | 2018-09-14 | 2019-01-11 | 北京空间机电研究所 | The hard sequential control circuit of space remote sensing camera CCD power supply |
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