CN206595263U - The interconnection structure of IBC batteries - Google Patents
The interconnection structure of IBC batteries Download PDFInfo
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- CN206595263U CN206595263U CN201720080886.4U CN201720080886U CN206595263U CN 206595263 U CN206595263 U CN 206595263U CN 201720080886 U CN201720080886 U CN 201720080886U CN 206595263 U CN206595263 U CN 206595263U
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- grid line
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model provides a kind of interconnection structure of IBC batteries, including just superfine grid line, the thin grid line of negative pole, anode connecting line and GND connecting line, the backplate of IBC batteries is using two dimension without main grid structure, just superfine grid line, the thin grid line of negative pole is placed on antireflective passive film, antireflective passive film has emitter stage and back surface field area, just superfine grid line, the thin grid line of negative pole penetrates antireflective passive film and forms Ohmic contact with emitter stage and back surface field area respectively, anode connecting line, GND connecting line is made of conductive material, the thin grid line of negative pole in the vertical direction of adjacent IBC cell pieces is connected by anode connecting line with just superfine grid line, just superfine grid line in the vertical direction of adjacent IBC cell pieces is connected by GND connecting line with the thin grid line of negative pole；The interconnection structure of this kind of IBC battery, can reduce the consumption of slurry, reduce cost, and shorten the collection distance of electric current, so as to improve battery efficiency.
Description
Technical field
The present invention relates to a kind of interconnection structure of IBC batteries.
Background technology
IBC（Interdigitated back contact refer to intersection back contacts）Battery, refers to that battery front side is electrodeless,
Positive and negative polarities metal grid lines are in finger-like cross arrangement in cell backside.The characteristics of IBC batteries are maximum is that PN junction and metal are contacted all
The back side in battery, the positive influence blocked without metal electrode, therefore with higher short circuit current flow Jsc, while the back side
Wider metal grid lines can be allowed to reduce series resistance Rs to improve fill factor, curve factor FF；Plus battery front-surface field
（Front Surface Field, FSF）And the open loop voltage gain that well passivated zone of action is come so that this front is without screening
The battery of gear not only high conversion efficiency, and look more attractive, meanwhile, the component of all back-contact electrodes is easier to assembling.IBC batteries
It is to realize one of technique direction of high-efficiency crystal silicon cell at present.
Extremely important step is metallization in the preparation of IBC batteries.Because there are many masters in current existing structure
Positive pole main gate line 5, negative pole main gate line 6, just superfine grid line 1 and the thin grid line 2 of negative pole in grid and thin grid, such as Fig. 1, with very high
Silver paste consumption, and conventional IBC batteries main gate line in the battery between region equidistantly distributed, add main grid chemical metallization
The complexity of skill and the cost of slurry.
Above mentioned problem is the problem of should paying attention to and solve in IBC cell manufacturing process.
The content of the invention
Above-mentioned present in prior art ask is solved it is an object of the invention to provide a kind of interconnection structure of IBC batteries
Topic.
The present invention technical solution be：
A kind of interconnection structure of IBC batteries, anode connecting line, GND connecting line and more than two
IBC cell pieces, two adjacent IBC cell pieces Central Symmetries are set, and each IBC cell pieces backplate is using two dimension without main grid
Structure, including just superfine grid line and the thin grid line of negative pole, just superfine grid line, the thin grid line of negative pole are placed on antireflective passive film, anti-reflection
Penetrate passivating film and have emitter stage and back surface field area, just superfine grid line, the thin grid line of negative pole penetrate antireflective passive film and hair respectively
Emitter-base bandgap grading and back surface field area form Ohmic contact, anode connecting line and GND connecting line also located at reduced passivation resisting film it
On, not with the emitter stage under it or back surface field formation Ohmic contact.Anode connecting line, GND connecting line are used
Conductive material is made, and anode connecting line is by the thin grid line of negative pole in adjacent IBC cell pieces vertical direction and just superfine grid line
Just superfine grid line in adjacent IBC cell pieces vertical direction is connected by connection, GND connecting line with the thin grid line of negative pole.
Further, just superfine grid line is evenly distributed in the metallized area of battery with the thin grid line of negative pole；Just superfine grid
The thin grid line of line, negative pole is parallel to each other, and in interfinger is inserted, i.e., is arranged alternately when mutually being held such as both hands interdigitate；Same level
Just superfine grid line, the thin grid line of negative pole are made up of many line segments respectively on line, just superfine grid line, each intersegmental difference of the thin grid line of negative pole
Provided with gap, it is located at the segmentation of just superfine grid line on the center line for the thin grid line of negative pole being parallel to each other, point of the thin grid line of negative pole
It also is located at section on the center line of just superfine grid line that is parallel to each other.
Further, the level interval between just superfine grid line, the adjacent segment of the thin grid line of negative pole is 0.5-2mm, it is vertical between
Away from for 0.6-2mm.
Further, just superfine grid line include positioned at horizontal direction metallized area sidepiece the just superfine grid line in edge and
The thin grid line of center cathode in the middle part of the metallized area of horizontal direction；The thin grid line of negative pole includes the metal positioned at horizontal direction
Change the thin grid line of edge negative pole and the superfine grid line of central negative in the middle part of the metallized area of horizontal direction of region sidepiece, battery
Edge connecting line is each passed through the thin grid line of edge negative pole and the just superfine grid line in edge, and battery edge connecting line is apart from edge negative pole
One end 0-0.5mm of thin grid line or the just superfine grid line in edge, battery center connecting line is each passed through the superfine grid line of central negative
With the center line of the thin grid line of center cathode.
Further, anode connecting line is by welding or being bonded the negative pole in adjacent IBC cell pieces vertical direction
Thin grid line is connected with just superfine grid line, and GND connecting line is by welding or being bonded the vertical direction of adjacent IBC cell pieces
On just superfine grid line be connected with the thin grid line of negative pole.
Further, conductive material uses the metal wire for being coated with low-temperature metal alloy, low-temperature alloy or using conductive
Organic and inorganic material and metal mixture.Wherein, low-temperature metal alloy is welding temperature<250oC low-temperature metal is closed
Gold.
Further, the cross-sectional area of anode connecting line and GND connecting line is respectively 2500-90000 squares
Micron, number is respectively 4-25 roots.
Further, silk-screen printing, chemical plating, plating, PVD method, ink-jet is respectively adopted in just superfine grid line, the thin grid line of negative pole
Printing, laser transfer are formed.
Further, just superfine grid line, the width of the thin grid line of negative pole are respectively 20-150 microns, and height is respectively 5-40 micro-
Rice, number is respectively 500-4000 roots.
Further, emitter stage and back surface field area are continuum or sectional area, just superfine when using sectional area
The thin grid line of grid line, negative pole is located in each sectional area respectively.
The beneficial effects of the invention are as follows：The interconnection structure of this kind of IBC battery, the backplate of IBC batteries uses two
Dimension can reduce the consumption of main gate line slurry, reduce cost without main grid structure, and shorten the collection distance of electric current, so as to improve
Battery efficiency.
Brief description of the drawings
Fig. 1 is conventional IBC batteries main grid, the structural representation of thin grid；
Fig. 2 is the structural representation of the interconnection structure of IBC batteries of the embodiment of the present invention；
Fig. 3 is just superfine grid line, anode connecting line and antireflective passive film, the structural representation of doped layer in embodiment
Figure；
Wherein：The just superfine grid lines of 1-, the thin grid line of 2- negative poles, 3- anode connecting lines, 4- GND connecting lines, 5- is just
Pole main gate line, 6- negative pole main gate lines, 7- antireflective passive films, 8- doped layers, 9- insulating cements.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment
A kind of interconnection structure of IBC batteries, such as Fig. 2, anode connecting line 3, GND connecting line 4 and two
IBC cell pieces above, two adjacent IBC cell pieces Central Symmetries are set, and each IBC cell pieces include just superfine grid respectively
Line 1 and the thin grid line 2 of negative pole, the backplate of IBC batteries use two dimension without main grid structure, just superfine grid line 1, the thin grid line 2 of negative pole
It is placed on antireflective passive film 7, antireflective passive film 7 has emitter stage or a back surface field area, such as Fig. 3, just superfine grid line 1,
The thin grid line 2 of negative pole penetrates antireflective passive film 7 and forms Ohmic contact, anode connecting line with emitter stage and back surface field area respectively
3rd, GND connecting line 4 is made of conductive material, and anode connecting line 3 is by adjacent IBC cell pieces vertical direction
The thin grid line 2 of negative pole be connected with just superfine grid line 1, GND connecting line 4 is by the positive pole in adjacent IBC cell pieces vertical direction
Thin grid line 1 is connected with the thin grid line of negative pole 2.
The interconnection structure of this kind of IBC battery, the backplate of IBC batteries, without main grid structure, can be dropped using two dimension
The consumption of low main gate line slurry, reduces cost, and shortens the collection distance of electric current, so as to improve battery efficiency.
Just superfine grid line 1 is evenly distributed in the metallized area of battery with the thin grid line 2 of negative pole；Just superfine grid line 1, negative pole
Thin grid line 2 is parallel to each other, and in slotting interfinger；Just superfine grid line 1, the thin grid line 2 of negative pole are respectively by many in same horizontal line
Line segment is constituted, and just superfine grid line 1, each intersegmental be respectively equipped with gap, the segmentation of just superfine grid line 1 of the thin grid line 2 of negative pole are located at
On the center line for the thin grid line 2 of negative pole being parallel to each other, the just superfine grid line being parallel to each other also is located at the segmentation of the thin grid line 2 of negative pole
On 1 center line.Level interval between just superfine grid line 1, the adjacent segment of the thin grid line 2 of negative pole is 0.5-2mm, vertical interval
For 0.6-2mm.
Just superfine grid line 1 includes the just superfine grid line 1 in edge of the metallized area sidepiece positioned at horizontal direction and positioned at water
Square to metallized area in the middle part of the thin grid line 1 of center cathode；The thin grid line 2 of negative pole includes the metallized area positioned at horizontal direction
The thin grid line 2 of edge negative pole of domain sidepiece and the superfine grid line 2 of central negative in the middle part of the metallized area of horizontal direction, battery side
Edge positive lead 3 passes through the just superfine grid line 1 in edge, and anode connecting line 3 is apart from an end of the just superfine grid line 1 in edge
Portion 0-0.5mm, GND connecting line 4 passes through the thin grid line 2 of edge negative pole, and GND connecting line 4 is thin apart from edge negative pole
One end 0-0.5mm of grid line 2.Anode connecting line 3 passes through the center line of the thin grid line 1 of center cathode, and GND connects
Wiring 4 is each passed through the center line of the superfine grid line 2 of central negative.
Anode connecting line 3 by weld or be bonded by the thin grid line 2 of negative pole in adjacent IBC cell pieces vertical direction with
Just superfine grid line 1 is connected, and GND connecting line 4 is by welding or being bonded the positive pole in adjacent IBC cell pieces vertical direction
Thin grid line 1 is connected with the thin grid line of negative pole 2.
Conductive material is using the metal wire, low-temperature alloy or organic, the nothing using conduction for being coated with low-temperature metal alloy
The mixture of machine material and metal.Emitter stage and back surface field area are continuum or sectional area, when using sectional area, just
The thin grid line 2 of superfine grid line 1, negative pole is located in each sectional area respectively.Silk screen is respectively adopted in just superfine grid line 1, the thin grid line 2 of negative pole
Printing, chemical plating, plating, PVD method, inkjet printing, laser transfer are formed.The width point of just superfine grid line 1, the thin grid line 2 of negative pole
Wei not be 20-150 microns, height is respectively 5-40 microns, and number is respectively 500-4000 roots.Anode connecting line 3 and battery
The cross-sectional area of negative lead 4 is respectively 2500-90000 square microns, and number is respectively 4-25 roots.
It is two preferred exemplaries of embodiment below.
Example 1, such as Fig. 2, IBC cell backsides electrode, without main grid structure, are divided into just superfine grid line 1 and negative pole are thin using two dimension
Grid line 2, thin grid line subsection setup, spacing is preferably 1mm between every section, and is located at the just superfine segmentation of grid line 1 parallel with it
The center of negative electrode grid line segment, wherein the doped layer 8 under thin grid line is continuous doped layer 8.
Adjacent cell piece is rotated 180oC, makes the positive and negative superfine grid line 1,2 of adjacent cell be located on a vertical line, will
The positive and negative electrode with upper a piece of battery in vertical range of adjacent cell is attached using same tinned wird.Center
Domain tinned wird is located at segmentation grid line center, and edge tinned wird is located at segmentation grid line edge, apart from grid line edge 0.5mm, plating
A diameter of 300 microns of tin copper cash, number is 10.
Example 2, IBC cell backsides electrode, without main grid structure, is divided into just superfine grid line 1 and the thin grid line 2 of negative pole using two dimension,
Thin grid line subsection setup, spacing is to be located at negative pole grid line parallel with it at 0.8mm, and the just superfine segmentation of grid line 1 between every section
The center of section.Doped layer 8 under wherein thin grid line is the spacing in discontinuous doped layer 8, horizontal range between adjacent doped layer 8
For 0.3mm.
Adjacent cell piece is rotated 180oC, makes the positive and negative superfine grid 1,2 of adjacent cell remain on a vertical line,
The positive and negative electrode with upper a piece of battery in vertical range of adjacent cell is used into the same copper cash for being coated with indium stannum alloy
It is attached.The copper cash that central area is coated with indium stannum alloy is located at segmentation grid line center, and edge is coated with the copper of indium stannum alloy
Line is located at segmentation grid line edge, apart from grid line edge 0.5mm, is coated with a diameter of 200 microns of the copper cash of indium stannum alloy, number
For 30.
Embodiment use battery-end set two-dimensional electrode figure, assembly end by adjacent cell perpendicular to same straight line
Both positive and negative polarity be connected, connecting line can use tinned wird, a diameter of 100 microns -300 microns of line, often go here and there component include 10-
12 pcs cell pieces, using whole copper cash.Copper cash in the middle of battery is located at the center of electrode pattern, the copper cash distance on both sides
The end 0.1mm of electrode pattern, the spacing between the electrode and connecting line that are not connected with connecting line keeps 0.3mm, to avoid hair
Raw short circuit.The number of connecting line is 8-40 roots.
The principle of the interconnection structure of embodiment IBC batteries：The series resistance of thin grid line and electric current transmission range are into anti-
Than the more short then series resistance of transmission range is smaller, and according to this principle, the number that increase connects grid line can effectively reduce series electrical
Resistance, so as to increase battery efficiency.
Claims (10)
1. a kind of interconnection structure of IBC batteries, it is characterised in that：Anode connecting line, GND connecting line and two
IBC cell pieces more than individual, two adjacent IBC cell pieces Central Symmetries are set, and each IBC cell pieces backplate uses two
Dimension is without main grid structure, including just superfine grid line and the thin grid line of negative pole, and just superfine grid line, the thin grid line of negative pole are placed in antireflective passive film
On, antireflective passive film has emitter stage and back surface field area, and just superfine grid line, the thin grid line of negative pole penetrate antireflective passivation respectively
Film forms Ohmic contact with emitter stage and back surface field area, and anode connecting line is located at reduced passivation resisting film with GND connecting line
On, not with the emitter stage under it and back surface field formation Ohmic contact, anode connecting line, GND connecting line are used
Conductive material is made, anode connecting line by the thin grid line of negative pole in the vertical direction of adjacent IBC cell pieces with it is just superfine
Grid line is connected, and GND connecting line connects the just superfine grid line in the vertical direction of adjacent IBC cell pieces and the thin grid line of negative pole
Connect.
2. the interconnection structure of IBC batteries as claimed in claim 1, it is characterised in that：Just superfine grid line and the thin grid of negative pole
Line is evenly distributed in the metallized area of battery；Just superfine grid line, the thin grid line of negative pole are parallel to each other, and in slotting interfinger；
Just superfine grid line, the thin grid line of negative pole are made up of many line segments respectively in same horizontal line, just superfine grid line, the thin grid line of negative pole it is each
Intersegmental be respectively equipped with is located at gap, the segmentation of just superfine grid line on the center line for the thin grid line of negative pole being parallel to each other, and negative pole is thin
It also is located at the segmentation of grid line on the center line of just superfine grid line that is parallel to each other.
3. the interconnection structure of IBC batteries as claimed in claim 2, it is characterised in that：Just superfine grid line, the thin grid line of negative pole
Adjacent segment between level interval be 0.5-2mm, vertical interval is 0.6-2mm.
4. the interconnection structure of IBC batteries as claimed in claim 2, it is characterised in that：Just superfine grid line includes being located at water
Square to metallized area sidepiece the just superfine grid line in edge and center in the middle part of the metallized area of horizontal direction just
Superfine grid line；The thin grid line of negative pole includes the thin grid line of edge negative pole of the metallized area sidepiece positioned at horizontal direction and positioned at level
The superfine grid line of central negative in the middle part of the metallized area in direction, battery edge connecting line is each passed through the thin grid line of edge negative pole and side
The just superfine grid line of edge, and battery edge connecting line is apart from an end 0- of the just superfine grid line of the thin grid line of edge negative pole or edge
0.5mm, battery center connecting line is each passed through the center line of the superfine grid line of central negative and the thin grid line of center cathode.
5. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：Anode is connected
The thin grid line of negative pole in adjacent IBC cell pieces vertical direction is connected by line by welding or bonding with just superfine grid line, and battery is born
Pole connecting line is connected the just superfine grid line in the vertical direction of adjacent IBC cell pieces and the thin grid line of negative pole by welding or being bonded
Connect.
6. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：Conductive material is used
It is coated with the metal wire, low-temperature alloy or the mixture using conductive organic and inorganic material and metal of low-temperature metal alloy.
7. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：Anode is connected
The cross-sectional area of line and GND connecting line is 2500-90000 square microns, and number is respectively 4-25 roots.
8. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：It is just superfine grid line, negative
Superfine grid line is respectively adopted silk-screen printing, chemical plating, plating, PVD method, inkjet printing or laser transfer and formed.
9. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：It is just superfine grid line, negative
The width of superfine grid line is respectively 20-150 microns, and height is respectively 5-40 microns, and number is respectively 500-4000 roots.
10. the interconnection structure of the IBC batteries as described in claim any one of 1-4, it is characterised in that：Transmitting is extremely continuous
Region or sectional area, back surface field area are continuum or sectional area, when using sectional area, just superfine grid line, negative pole
Thin grid line is located in each sectional area respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720080886.4U CN206595263U (en) | 2017-01-22 | 2017-01-22 | The interconnection structure of IBC batteries |
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| CN201720080886.4U CN206595263U (en) | 2017-01-22 | 2017-01-22 | The interconnection structure of IBC batteries |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653880A (en) * | 2017-01-22 | 2017-05-10 | 泰州乐叶光伏科技有限公司 | Electrode interconnection structure of IBC battery |
| EP4177966A1 (en) * | 2021-11-05 | 2023-05-10 | Zhejiang Jinko Solar Co., Ltd. | Busbar-free interdigitated back contact solar cell and interdigitated back contact solar cell module |
-
2017
- 2017-01-22 CN CN201720080886.4U patent/CN206595263U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653880A (en) * | 2017-01-22 | 2017-05-10 | 泰州乐叶光伏科技有限公司 | Electrode interconnection structure of IBC battery |
| EP4177966A1 (en) * | 2021-11-05 | 2023-05-10 | Zhejiang Jinko Solar Co., Ltd. | Busbar-free interdigitated back contact solar cell and interdigitated back contact solar cell module |
| US11764317B2 (en) | 2021-11-05 | 2023-09-19 | Jinko Solar (Haining) Co., Ltd. | Busbar-free interdigitated back contact solar cell and interdigitated back contact solar cell module |
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