CN206583873U - The micro- thermal conductivity detector (TCD) of film-type - Google Patents
The micro- thermal conductivity detector (TCD) of film-type Download PDFInfo
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- CN206583873U CN206583873U CN201621343162.6U CN201621343162U CN206583873U CN 206583873 U CN206583873 U CN 206583873U CN 201621343162 U CN201621343162 U CN 201621343162U CN 206583873 U CN206583873 U CN 206583873U
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Abstract
The utility model provides a kind of micro- thermal conductivity detector (TCD) of film-type, and the micro- thermal conductivity detector (TCD) of the film-type has sandwich structure, is glass substrate, the silicon chip with very low power and the glass with micro- raceway groove successively from below to up；Cross network structure fabrication is in silicon chip surface and is suspended among microchannel, and its structure is the thermistor protected by two layers of silica/silicon nitride film；Critical process includes passing through deep reaction ion etching（DRIE）Technique etching silicon wafer back side silicon release cross network structure, the making that low-grade fever leads detector chip is completed by electrostatic bonding twice.Two layers of silica/silicon nitride film up and down of thermistor of the present utility model not only plays a protective role to it; and symmetrical due to structure can also play a part of stress equilibrium; the deformation of cross network structure is reduced, the intensity and stability of thermistor supporting construction is substantially increased；Cross network structure is discharged using a step DRIE techniques so that very low power sidewall, device dead volume is small.
Description
Technical field
The utility model belongs to microelectromechanical systems field, more particularly to a kind of micro- thermal conductivity detector (TCD) of film-type and its
Preparation method.
Background technology
Thermal conductivity detector (TCD) is a kind of important detector of gas chromatograph, and this detector is only to the dense of detected gas
Degree is sensitive, and almost all gas are all responded.Traditional gas chromatography thermal conductivity detector is typically added using stainless steel or ceramics
Work is formed, and volume is big, weight weight, power consumption is big, it is prior be due to process technology restriction, traditional thermal conductivity detector (TCD) typically all has
There is a larger dead volume, about tens to several hectolambdas, which has limited the reduction of thermal conductivity detector (TCD) Monitoring lower-cut.
With the development of MEMS (Micro-electro-mechanical system) technology, designed using MEMS technology,
The low-grade fever of making, which leads detector chip, has the advantages that small volume, lightweight, small power consumption, and what is more important is based on MEMS technology
The dead volume of the thermal conductivity detector (TCD) of making is greatly lowered and (is generally less than 1 microlitre, be a nanoliter magnitude), and its Monitoring lower-cut is up to several
Ppm is even less than 1ppm.
In existing low-grade fever leads detector technologies scheme, thermistor be made on supporting layer and be suspended in micro- raceway groove it
In, but there is Railway Project：
1st, the supporting layer of thermistor is generally silicon nitride monofilm or silicon nitride/Si oxide compound film structure, due to answering
Power is excessive or mismatch problems, the problems such as structure after release can occur fracture, moderate finite deformation, collapse, and this supporting construction is stable
Property it is poor, easily by airflow influence.
2nd, based on potassium hydroxide (KOH) anisotropic etch or two step deep reaction ion etching techniques, (DRIE, the first step is
Anisotropic etching, second step is isotropic etching) discharge supporting construction and shape from positive (thermistor side) corrosion silicon
Into corresponding micro- raceway groove, excessive unnecessary dead volume can be brought.
In order to obtain high performance micro- thermal conductivity detector (TCD), above mentioned problem is the research of this area for being engaged in micro- thermal conductivity detector (TCD)
Personnel need the technical problem for putting forth effort to solve.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is that providing a kind of film-type low-grade fever leads inspection
Device and preparation method thereof is surveyed, for solving the supporting layer of thermistor in the prior art is easily broken off and unnecessary dead volume is excessive etc.
Problem.
In order to achieve the above objects and other related objects, the utility model provides a kind of micro- thermal conductivity detector (TCD) of film-type, bag
Include：Very low power structure is formed with silicon substrate, the silicon substrate；By first medium film-thermistor-second medium film shape
Into graphical stacked structure, hang in the positive very low power structure of the silicon substrate；Sheet glass with micro- raceway groove, key
Together in silicon substrate front, and the graphical stacked structure is located in micro- raceway groove of the sheet glass；Glass substrate,
It is bonded to the back side of the silicon substrate.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the very low power structure runs through institute
State silicon substrate front and the back side.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, it is also formed with the silicon substrate
Pad structure is formed with pad recess, the pad recess, the pad structure is electrical connected with the thermistor.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, what the thermistor was used
Metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
It is used as a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the first medium film and
The planar structure of second medium film is each to extend to have multiple extensions in cross network structure, and the cross network structure
Portion is connected with the silicon substrate, to support the cross network structure.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the thermistor is serrated
Extend along the cross network structure, and be connected between the pad structure.
It is used as a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the first medium film and
Second medium film includes the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
Preferably, the first medium film and second medium film be silicon oxide film and silicon nitride film constitute it is folded
Rotating fields, the first medium film is from bottom to top silicon oxide film and silicon nitride film laminated construction, the second medium
Film is from bottom to top silicon nitride film and silicon oxide film laminated construction.
It is used as a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the first medium film and
Second medium film is the parcel thermistor or clamps the thermistor.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the graphical stacked structure hangs
It is hung on the middle section of the positive very low power structure of the silicon substrate, and the central area in micro- raceway groove of the sheet glass
Domain.
As a kind of preferred scheme of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the sheet glass and silicon substrate,
The glass substrate and silicon substrate are electrostatic bonding.
The utility model also provides a kind of preparation method of the micro- thermal conductivity detector (TCD) of film-type, and the preparation method includes step
Suddenly：Step 1) there is provided a silicon substrate, deposit first medium film in the surface of silicon；Step 2), in the first medium
Deposited metal and thermistor is graphically formed on film；Step 3), in heavy on the thermistor and first medium layer film
Product second medium film, formation first medium film Film patterning to the first medium film and second medium-temperature-sensitive electricity
The graphical stacked structure of resistance-second medium film；Step 4) there is provided the sheet glass that one carries micro- raceway groove, it is bonded the glass
Piece and the silicon substrate, and the graphical stacked structure is located in micro- raceway groove of the sheet glass；Step 5), from the back side
The silicon substrate is etched, the graphical stacked structure of the first medium film-thermistor-second medium film is discharged；
Step 6) there is provided a glass substrate, and the glass substrate is bonded to the back side of the silicon substrate.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, step 1) heavy
Also it is included in the step of forming pad area groove on the silicon substrate before product first medium film；Step 2) after deposited metal, figure
Shapeization forms pad structure in the pad recess simultaneously, and the pad structure is electrical connected with the thermistor；Step
3) it is Film patterning to the first medium film and second medium while exposing the key of the pad structure and silicon substrate in
Close region.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, step 2) in,
The metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, step 3) figure
After change, the planar structure of the first medium film and second medium film is cross network structure, and the cross network knot
There are multiple extensions, graphical heap of each extension in the first medium film-thermistor-second medium film in structure
After stack structure release, it is connected with the silicon substrate, to support the cross network structure.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, the temperature-sensitive electricity
Resistance is serrated to be extended along the cross network structure, and is connected between the pad structure.
It is situated between as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, described first
Matter film and second medium film include the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
Preferably, the first medium film and second medium film be silicon oxide film and silicon nitride film constitute it is folded
Rotating fields, the first medium film is from bottom to top silicon oxide film and silicon nitride film laminated construction, the second medium
Film is from bottom to top silicon nitride film and silicon oxide film laminated construction.
It is situated between as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, described first
Matter film and second medium film are the parcel thermistor or the clamping thermistor.
It is described graphical as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model
Stacked structure hangs on the middle section of the positive very low power structure of the silicon substrate, and step 4) in, the sheet glass and
After the silicon substrate bonding, the graphical stacked structure is located at the middle section in micro- raceway groove of the sheet glass.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, step 5) in,
Using deep reaction ion etching technique from silicon substrate described in back-etching, the first medium film-thermistor-the is discharged
The graphical stacked structure of second medium film.
It is used as a kind of preferred scheme of the preparation method of the micro- thermal conductivity detector (TCD) of film-type of the present utility model, step 4) in
Sheet glass and silicon substrate, step 6) in glass substrate and silicon substrate be bonded using static bonding process.
As described above, micro- thermal conductivity detector (TCD) of film-type of the present utility model and preparation method thereof, has the advantages that：
1) two layers of silica/silicon nitride film up and down of thermistor of the present utility model not only plays protection to it and made
With, on the other hand due to the symmetrical deformation that can also play a part of stress equilibrium, reduce cross network structure of structure,
So as to substantially increase the intensity and stability of thermistor supporting construction；
2) the utility model discharges cross network structure using a step deep reaction ion etching DRIE techniques so that very low power
Sidewall, device dead volume is small.
Brief description of the drawings
Fig. 1 is shown as the schematic diagram of the cross network structure in the micro- thermal conductivity detector (TCD) of film-type of the present utility model.
Fig. 2 is shown as micro- thermal conductivity detector (TCD) with four thermistors.
Fig. 3 is shown as the Wheatstone bridge that four thermistors are constituted.
What each step of preparation method that Fig. 4~Figure 12 is shown as the micro- thermal conductivity detector (TCD) of film-type of the present utility model was presented
Structural representation, wherein, Figure 12 is shown as the micro- thermal conductivity detector (TCD) structural representation of film-type.
Component label instructions
1 silicon substrate
11 very low power structures
12 cross network structures
2 oxide layers
3 pad recess
41 first medium films
42 second medium films
51 thermistors
52 pad structures
6 have the sheet glass of micro- raceway groove
7 glass substrates
81st, 83 microchannel
82 install the interface channel of capillary
Embodiment
Illustrate embodiment of the present utility model below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages of the present utility model and effect easily.The utility model can also be by addition
Different embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With, without departing from it is of the present utility model spirit under carry out various modifications or alterations.
Refer to Fig. 1~Figure 12.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, only display is with relevant component in the utility model rather than according to during actual implement in illustrating then
Component count, shape and size are drawn, and kenel, quantity and the ratio of each component can change for a kind of random during its actual implementation
Become, and its assembly layout kenel may also be increasingly complex.
As shown in FIG. 11 and 12, the micro- thermal conductivity detector (TCD) of film-type of the present utility model has sandwich structure, from lower and
On be glass substrate 7, the silicon substrate 1 with very low power and the sheet glass with micro- raceway groove 6 successively.Cross network structure 12 is made in silicon
The surface of substrate 1 and the middle section (distance of cross network structure to two side walls of very low power is equal) for being suspended in very low power, such as
Shown in Figure 11 and 12, its structure is the thermistor 51 protected by two layers of silica/silicon nitride film, is distinguished from top to down
For：Silica/silicon nitride, thermistor 51, nitridation silicon/oxidative silicon, it is notable that in order to more clearly draw temperature-sensitive electricity
Hinder silica/silicon nitride that upper strata is not drawn in 51 structures, Fig. 1.In addition, it is necessary to which explanation is：Other structures can be used
Cross network structure 12 and the structure of thermistor 51, it is not limited to the structure shown in Fig. 1.This new structure design is fine
Ground solves two problems of the prior art：First, two layers of silica/silicon nitride film up and down of thermistor 51 is not only right
It plays a protective role, and on the other hand because the symmetrical of structure can also play a part of stress equilibrium, reduces crossing net
The deformation of shape structure 12；Second, cross network structure 12 is discharged using a step DRIE techniques, very low power sidewall, device is dead
Small volume.
A thermistor 51 is only depicted in Figure 11 and Figure 12, it is however generally that, a micro- thermal conductivity detector (TCD) includes four
Individual thermistor 51R1, R2, R3, R4, as shown in Fig. 2 wherein R1, R4 are located in a microchannel 81, and R2, R3 are located in addition
In one microchannel 83, there is the interface channel 82 of an installation capillary at the two ends of each microchannel respectively.R1、R2、R3、R4
According to one Wheatstone bridge of composition that is linked in sequence as shown in Figure 3.
As shown in FIG. 11 and 12, the present embodiment provides a kind of micro- thermal conductivity detector (TCD) of film-type, including：Silicon substrate 1, it is described
Very low power structure 11 is formed with silicon substrate 1；Formed by first medium film 41- thermistor 51- second mediums film 42
Graphical stacked structure, hangs in the positive very low power structure 11 of the silicon substrate 1；Sheet glass 6 with micro- raceway groove, key
Together in the front of silicon substrate 1, and the graphical stacked structure is located in micro- raceway groove of the sheet glass 6；Glass lined
Bottom 7, is bonded to the back side of the silicon substrate 1.
As an example, the very low power structure 11 is through the front of silicon substrate 1 and the back side.
As an example, being also formed with being formed with pad structure in pad recess 3, the pad recess in the silicon substrate 1
52, the pad structure 52 is electrical connected with the thermistor 51.The metal that the thermistor 51 is used includes Pt/Ti
One kind in lamination, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
As an example, the planar structure of the first medium film 41 and second medium film 42 is cross network structure
There are multiple extensions, each extension is connected with the silicon substrate 1 in 12, and the cross network structure 12, it is described to support
Cross network structure 12.The thermistor 51 is serrated to be extended along the cross network structure 12, and is connected to the weldering
Between dish structure 52.
As an example, the first medium film 41 and second medium film 42 include silicon oxide film and silicon nitride film
One or two kinds of compositions laminated construction.The first medium film 41 and second medium film 42 are electric to wrap up the temperature-sensitive
Resistance 51 clamps the thermistor 51.
As an example, the graphical stacked structure is located at the middle section in micro- raceway groove of the sheet glass 6.
As an example, the sheet glass 6 is electrostatic bonding with silicon substrate 1, the glass substrate 7 and silicon substrate 1.
As shown in Fig. 4~Figure 12, the present embodiment also provides a kind of preparation method of the micro- thermal conductivity detector (TCD) of film-type, the system
Preparation Method includes step：
As shown in Fig. 4~Fig. 6, step 1 is carried out first) there is provided a silicon substrate 1, in forming pad area on the silicon substrate 1
Groove, as shown in Fig. 4~Fig. 5, then in the surface of silicon substrate 1 deposition first medium film 41, as shown in Figure 6.
As shown in fig. 6, then carrying out step 2), form in deposited metal on the first medium film 41 and graphically heat
Quick resistance 51.
As an example, the metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
In addition, in the present embodiment, step 2) after deposited metal, it is graphical to form weldering in the pad recess 3 simultaneously
Dish structure 52, the pad structure 52 is electrical connected with the thermistor 51.
As shown in Fig. 7~Fig. 8, step 3 is then carried out), in deposition on the thermistor 51 and first medium layer film
Second medium film 42, first medium film 41- is graphically formed to the first medium film 41 and second medium film 42
The graphical stacked structure of thermistor 51- second mediums film 42.
As an example, step 3) it is graphical after, the planar structure of the first medium film 41 and second medium film 42
To have multiple extensions in cross network structure 12, and the cross network structure 12, as shown in figure 1, each extension is in institute
After the graphical stacked structure release for stating first medium film 41- thermistor 51- second mediums film 42, with the silicon substrate
1 connection, to support the cross network structure 12.
Extend as an example, the thermistor 51 is serrated along the cross network structure 12, and be connected to described
Between pad structure 52, as shown in Figure 1.
As an example, the first medium film 41 and second medium film 42 are the parcel thermistor 51 or clamping
The thermistor 51.
As an example, the first medium film 41 and second medium film 42 include silicon oxide film and silicon nitride film
One or two kinds of compositions laminated construction.In the present embodiment, the first medium film 41 is that silica is thin from bottom to top
Film and silicon nitride film laminated construction, the second medium film 42 is silicon nitride film and silicon oxide film lamination from bottom to top
Structure, i.e., what is contacted with the thermistor 51 is silicon nitride film, and silicon oxide film is then located at the silicon nitride film
Outside, the silicon oxide film is arranged at outside silicon nitride film, the thermistor 51 can be more effectively protected, increased
The antioxygenic property of thermistor 51 and anti-etching/corrosivity of laminated construction.
Two layers of silica/silicon nitride film up and down of thermistor 51 of the present utility model not only plays protection to it and made
With on the other hand due to the symmetrical shape that can also play a part of stress equilibrium, reduce cross network structure 12 of structure
Become, so as to substantially increase the intensity and stability of the supporting construction of thermistor 51.
As an example, step 3) in, the first medium film 41 and second medium film 42 are graphically exposed simultaneously
The bond area of the pad structure 52 and silicon substrate 1.
As shown in figure 9, then carrying out step 4) there is provided the sheet glass 6 that one carries micro- raceway groove, be bonded the sheet glass 6 and
The silicon substrate 1, and cause the graphical stacked structure be located at the sheet glass 6 micro- raceway groove in, the sheet glass 6 it is micro-
Very low power on raceway groove and the silicon substrate 1 collectively constitutes the microchannel 81,83 of the micro- thermal conductivity detector (TCD) of film-type.
As an example, after the sheet glass 6 and the silicon substrate 1 are bonded, the graphical stacked structure is located at the glass
Middle section in micro- raceway groove of glass piece 6.
As an example, step 4) in sheet glass 6 and silicon substrate 1 be bonded using static bonding process.
It should be noted that the specific size of the very low power on glass on micro- raceway groove and silicon substrate can be with next according to being actually needed
It is determined that.The size of micro- raceway groove can be determined by the control corrosion rate time on glass；The depth of very low power on silicon substrate is by silicon chip
Thickness is determined.
As shown in Figure 10, step 5 is then carried out), from silicon substrate 1 described in back-etching, discharge the first medium thin
The graphical stacked structure of film 41- thermistor 51- second mediums film 42.
As an example, using deep reaction ion etching technique from silicon substrate 1 described in back-etching, discharging described first and being situated between
The graphical stacked structure of matter film 41- thermistor 51- second mediums film 42.The utility model using a step react deeply from
Son etching DRIE technique release cross networks structure 12 so that very low power sidewall, device dead volume is small.
As shown in FIG. 11 and 12, step 6 is finally carried out) it is bonded there is provided a glass substrate 7, and by the glass substrate 7
In the back side of the silicon substrate 1.
As an example, the glass substrate 7 is bonded with silicon substrate 1 using static bonding process.
In a specific implementation process, the preparation method of the micro- thermal conductivity detector (TCD) of film-type comprises the following steps：
1) silicon substrate 1 is provided, oxidation is carried out to the silicon substrate 1 and forms oxide layer 2 and graphical, as shown in Figure 4；
2) corroded using KOH and pad recess 3, corrosion depth is more than 0.5 micron and less than 10 microns, as shown in Figure 5；
3) silicon oxide deposition/silicon nitride film, then splash-proofing sputtering metal Pt/Ti or Ni/Cr or W/Ti or W/Re, and figure
Change, form thermistor 51 and metal pad, as shown in Figure 6；
4) deposit silicon nitride/silicon oxide film, as shown in Figure 7；
5) etch silicon nitride/silicon oxide film, exposes the silicon of pad area and bonding region (it is worth noting that, temperature-sensitive is electric
Silicon nitride/silicon oxide film of the top of resistance 51 and silica/silicon nitride of lower section can be with fully wrapped around metal Pr/Ti or Ni/Cr
Or W/Ti or W/Re, Pr/Ti or Ni/Cr or W/Ti or W/Re can also be clamped), as shown in Figure 8；
6) sheet glass 6 for having micro- raceway groove will be corroded and the front of silicon substrate 1 carries out electrostatic bonding, as shown in Figure 9；
7) DRIE etches the back side silicon of silicon substrate 1, discharges cross network structure 12, as shown in Figure 10；
8) back side silicon of silicon substrate 1 and glass substrate 7 carry out electrostatic bond and merge scribing formation low-grade fever leading detector chip, such as
Shown in Figure 11 and Figure 12.
As described above, micro- thermal conductivity detector (TCD) of film-type of the present utility model and preparation method thereof, has the advantages that：
1) two layers of silica/silicon nitride film up and down of thermistor 51 of the present utility model not only plays protection to it and made
With on the other hand due to the symmetrical shape that can also play a part of stress equilibrium, reduce cross network structure 12 of structure
Become, so as to substantially increase the intensity and stability of the supporting construction of thermistor 51；
2) the utility model is using step deep reaction ion etching DRIE techniques release cross network structure 12 so that micro- ditch
Groove sidewall is steep, and device dead volume is small.
So, the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (11)
1. a kind of micro- thermal conductivity detector (TCD) of film-type, it is characterised in that：Including：
Very low power structure is formed with silicon substrate, the silicon substrate；
The graphical stacked structure formed by first medium film-thermistor-second medium film, hangs on the silicon substrate
Positive very low power structure in；
Sheet glass with micro- raceway groove, is bonded to the silicon substrate front, and cause the graphical stacked structure is located at described
In micro- raceway groove of sheet glass；
Glass substrate, is bonded to the back side of the silicon substrate.
2. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The very low power structure is through described
Silicon substrate front and the back side.
3. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：Weldering is also formed with the silicon substrate
Pad structure is formed with disk groove, the pad recess, the pad structure is electrical connected with the thermistor.
4. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The gold that the thermistor is used
Category includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
5. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
The planar structure of dielectric film be cross network structure, and the cross network structure in have multiple extensions, each extension
It is connected with the silicon substrate, to support the cross network structure.
6. the micro- thermal conductivity detector (TCD) of film-type according to claim 5, it is characterised in that：The thermistor is serrated edge
The cross network structure extension, and be connected between pad structure.
7. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
Dielectric film includes the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
8. the micro- thermal conductivity detector (TCD) of film-type according to claim 7, it is characterised in that：The first medium film and second
Dielectric film is the laminated construction that silicon oxide film and silicon nitride film are constituted, and the first medium film is from bottom to top oxidation
Silicon thin film and silicon nitride film laminated construction, the second medium film are folded for silicon nitride film with silicon oxide film from bottom to top
Rotating fields.
9. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
Dielectric film is the parcel thermistor or clamps the thermistor.
10. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The graphical stacked structure hangs
It is hung on the middle section of the positive very low power structure of the silicon substrate, and the central area in micro- raceway groove of the sheet glass
Domain.
11. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The sheet glass and silicon substrate, institute
It is electrostatic bonding that glass substrate, which is stated, with silicon substrate.
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| CN108318525A (en) * | 2018-04-08 | 2018-07-24 | 北京工业大学 | A kind of micro thermal conductivity detector insensitive to flow |
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| CN109959747A (en) * | 2017-12-22 | 2019-07-02 | 中国科学院上海微***与信息技术研究所 | The integrated chip and preparation method of microfluidic chromatography column and micro- thermal conductivity detector (TCD) |
| CN109959747B (en) * | 2017-12-22 | 2024-01-16 | 中国科学院上海微***与信息技术研究所 | Integrated chip of micro chromatographic column and micro heat conduction detector and preparation method |
| CN108249385A (en) * | 2018-01-15 | 2018-07-06 | 烟台艾睿光电科技有限公司 | A kind of MEMS package weld assembly |
| CN108318525A (en) * | 2018-04-08 | 2018-07-24 | 北京工业大学 | A kind of micro thermal conductivity detector insensitive to flow |
| CN108318525B (en) * | 2018-04-08 | 2024-01-05 | 北京工业大学 | Micro thermal conductivity detector insensitive to flow |
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