CN206532753U - A kind of compound substrate/III-nitride micron rod structure - Google Patents

Abstract

The utility model discloses a kind of compound substrate/III-nitride micron rod structure.To grow graphene insert layer on dielectric material as compound substrate, III-nitride micron post is grown in graphene insert layer.In the utility model, graphene is directly prepared by low temperature solid-state carbon source method on non-sapphire dielectric material, regrowth obtains III-nitride micron post in compound substrate, solve on some dielectric materials III-nitride can not nucleating growth problem, widened the scope that dielectric substrate is adopted outside III-nitride.III-nitride micron rod structure is prepared especially with graphene/quartz compound substrate extension, production cost can be effectively reduced.

Description

A kind of compound substrate/III-nitride micron rod structure

Technical field

The utility model is related to a kind of III-nitride micron rod structure using graphene/dielectric material as compound substrate, Belong to technical field of semiconductor.

Background technology

III-nitride is as third generation semi-conducting material, with direct band gap, the advantages of energy gap is big, illumination, The optoelectronic areas such as display, ultraviolet detection are widely used.At present, group III nitride material is more from Sapphire Substrate epitaxial growth system It is standby, and the extension III-nitride relative difficulty on other dielectric materials such as silica.

Before the utility model is made, Chinese invention patent（CN 102593294A）" combined type gallium nitride-based semiconductor Growth substrates and preparation method thereof " propose a kind of combined type gallium nitride-based semiconductor growth substrates, and it includes：Substrate, lattice Cushion, it is by class diamond film（Diamond-LikeCarbon abbreviations DLC）Constitute, using the combination of DLC and nitride, Overcome the common substrates such as quartz glass or metal substrate be used for growing gallium nitride semi-conducting material exist lattice mismatch and The problems such as thermal mismatching；Chinese utility model patent（CN 203697610U）" indium nitride/gallium nitride/glass structure " proposes glass The structure of cvd nitride indium on cvd nitride gallium buffer layer thin film on glass, nitride buffer layer film.Chinese invention patent（CN 101320686）" the SiO in HVPE method growing gallium nitride films₂Nanometer mask and method " proposes the first electronics in GaN template Beam evaporation layer of metal Al, then using the method generation cellular anodised aluminium (AAO) of electrochemistry, then deposit one layer of medium SiO₂Layer, then removes AAO with acid or aqueous slkali, SiO has been obtained in GaN template₂The dot matrix distribution of nano-particle, by clear After washing, using this template as substrate, it is placed in hvpe reactor Intracavity and goes out GaN thick films.Using the above method, technological process It is relative complex.

Because III-nitride is difficult nucleating growth on some dielectric materials, therefore, prior art can't directly exist Grown obtains the higher group iii nitride semiconductor of quality.

The content of the invention

The utility model in view of the deficienciess of the prior art, provide it is a kind of it is with low cost, simple to operate, can scale metaplasia The compound substrate of production/III-nitride micron rod structure.

Realizing the technical scheme of the present utility model purpose is：A kind of compound substrate/III-nitride micron post is provided Structure, described compound substrate is that graphene insert layer is grown on dielectric material；Three races's nitrogen is grown in graphene insert layer Compound micron post.

The height of micron post described in the utility model is 10~300um, a diameter of 10~300um.

The utility model provide a preferred scheme be：In dielectric material grown on quartz graphene insert layer, in stone GaN microns of posts are grown in black alkene insert layer.

The compound substrate that the utility model is provided/III-nitride micron rod structure can be prepared as follows and obtain：

1st, dielectric material substrate is cleaned by ultrasonic in acetone 2~5 minutes, is cleaned by ultrasonic 2~5 points after taking-up in ethanol Clock, then be cleaned by ultrasonic 2~5 minutes in deionized water；

2nd, 50~500nm nickel dams are plated on dielectric material substrate surface using ion beam sputtering or electron beam evaporation；

3rd, the graphite powder ultrasonic disperse by purity higher than 99.9% is in ethanol, coating and nickel dam surface；

4th, the dielectric material substrate for scribbling graphite powder is put into reaction chamber, argon gas atmosphere, temperature are 300 DEG C~600 DEG C Heated 3~10 minutes under conditions of temperature, carbon mechanism is analysed by carburizing, i.e., in heating process, in carbon infiltration metallic nickel, when stopping Only during heating cooling, carbon is separated out from metallic nickel, and graphene is formed between nickel dam and dielectric material interface；

5th, taken out from reaction chamber after compound substrate, be put into the FeCl that concentration is 0.2mol/l~0.8mol/l₃Solution, is carved Eating away nickel dam, compound substrate is cleaned with deionized water repeatedly, until deionized water is in colorless state, obtains graphene/medium material Expect compound substrate；

6th, compound substrate is put into hydride gas-phase epitaxy system or metal-organic chemical vapor deposition equipment system chamber, Handled 10~20 minutes under the conditions of hydrogen atmosphere, 900 DEG C~1000 DEG C；

7th, it is passed through XCl in hydride gas-phase epitaxy system₃ And NH₃Respectively as three clan sources and nitrogen source, X is three-group metal Al, Ga, In, XCl₃Reacted and generated by the HCl positioned at hydride gas-phase epitaxy system upstream and three-group metal Al, Ga, In, NH₃With XCl₃III-nitride XN is generated in the reaction of hydride gas-phase epitaxy system downstream and is deposited on compound substrate surface.Have in metal X is passed through in machine thing chemical gas-phase deposition system（CH₃）₃ And NH₃Respectively as three clan sources and nitrogen source, Group III nitride is generated after reaction Thing is deposited on compound substrate surface.Compound lining material described in the utility model includes graphene, dielectric material, dielectric material Refer mainly to silica, tantalum pentoxide, hafnium oxide, zinc sulphide, zinc selenide etc..

In technical solutions of the utility model, with high purity graphite powder as carbon source, reaction temperature is 300~600 DEG C, passes through gold The carburizing analysis carbon mechanism of category nickel realized under cryogenic conditions, on dielectric material the growth of graphene prepare, then with preparing Graphene/dielectric material compound substrate epitaxial growth go out III-nitride micron post, micron 10~300um of pillar height, diameter 10 ~300um.

The utility model grows graphene using low temperature solid-state carbon source method, and in answering with graphene/dielectric material formation Close on substrate, epitaxial growth of group iii micron post, obtained a kind of raw directly on substrate using graphene as insert layer Length obtains the higher group iii nitride semiconductor of quality.

Compared with prior art, the utility model has the following advantages that：

1st, using the method for low temperature solid-state carbon source, direct growth goes out the height beneficial to III-nitride nucleation in dielectric substrate Defect state graphene, without carrying out transfer operation to graphene；Directly high-quality three races can be gone out in graphene Epitaxial growth Nitride micron post；It is successfully realized the growth of group iii nitride semiconductor on dielectric material.

2nd, compared with prior art, growth three races nitrogen in graphene/dielectric material compound substrate that the utility model is provided Compound micron post technology, with it is with low cost, simple to operate, be produced on a large scale the features such as.

Brief description of the drawings

The structural representation of III-nitride micron post is grown in the compound substrate that Fig. 1 provides for the utility model embodiment In figure, figure：1st, dielectric material；2nd, graphene insert layer；3rd, III-nitride micron post；

The optics for the graphene that Fig. 2 obtains for the use low temperature solid-state carbon source method growth that the utility model embodiment is provided shows Micro mirror figure；

The Raman light for the graphene that Fig. 3 obtains for the use low temperature solid-state carbon source method growth that the utility model embodiment is provided Spectrogram；

The use hydride vapour phase epitaxy method that Fig. 4 is provided for the utility model embodiment is in graphene/quartz compound substrate The upper scanning electron microscope diagram for growing obtained gallium nitride micron post；

The scanning electron microscope diagram and corresponding the moon for the gallium nitride micron post that Fig. 5 provides for the utility model embodiment Extreme ray fluorometric investigation figure.

Embodiment

Technical solutions of the utility model are further elaborated with specific embodiment below in conjunction with the accompanying drawings.

Embodiment 1

Referring to accompanying drawing 1, it is the signal of growth III-nitride micron rod structure in the compound substrate of the present embodiment offer Figure, graphene insert layer 2 is grown on dielectric material 1, compound substrate is obtained；In the graphene insert layer 2 of compound substrate again III-nitride micron post 3 is grown, adopts and prepares with the following method：

Step one, graphene/dielectric material compound substrate is prepared, the dielectric material that the present embodiment is provided is quartz, is utilized The method of low temperature solid-state carbon source, beneficial to the high defect state graphene of nitride nucleation, is comprised the following steps that in growth thereon：

1st, quartz substrate is cleaned by ultrasonic in acetone 3 minutes, be cleaned by ultrasonic in ethanol after taking-up 3 minutes, then gone It is cleaned by ultrasonic 3 minutes in ionized water；

2nd, using ion beam sputtering or electron beam evaporation method, the nickel dam that thickness is 200nm is plated in quartz substrate surface；

3rd, by 2g purity for 99.9% graphite powder ultrasonic disperse into 50ml ethanol, be coated on obtained by nickel dam table Face；

4th, the quartz substrate for scribbling graphite powder is put into reaction chamber, argon gas is injected after vacuumizing, in 500 DEG C of temperature Under the conditions of heat 5 minutes, make carbon penetrate into metal nickel dam in；Stop after heating, chamber naturally cools to room temperature, carbon is from nickel dam It is middle to separate out, grow high defect graphene between nickel dam and quartzy interface.Referring to accompanying drawing Fig. 2, it is obtained by the present embodiment High defect state graphene pattern optical microscope, the graphene shown in 1 in figure is thicker, and the graphene at 2 is relatively thin；Ginseng See accompanying drawing 3, it is the Raman spectrogram of obtained graphene, at 1 in accompanying drawing 2 and 2（Difference homologous thread 1 and 2）, The characteristic signal of graphene, i.e. D peaks, G peaks and 2D peaks can be measured, wherein Raman spectrum D peaks are very strong, indicate obtained stone Black alkene has higher defect in itself.

5th, substrate made from step 4 is put into the FeCl that concentration is 0.4mol/l₃In solution, etching removes nickel dam, is used in combination Deionized water is cleaned repeatedly, until deionized water is in colorless state, obtains graphene/quartz compound substrate.

Step 2, is compound substrate with graphene/quartz, and using hydride vapour phase epitaxy method, extension is given birth in compound substrate Long gallium nitride micron post, is comprised the following steps that：

1st, compound substrate is put into hydride gas-phase epitaxy system chamber, in a hydrogen atmosphere, 960 DEG C handle 15 points Clock；

2nd, it is passed through NH after the completion of hydrogen treat₃And GaCl₃Respectively as nitrogen source and gallium source, the ratio between its mole V/III is 50, growth pressure is 0.7Pa, at a temperature of 950 DEG C, and gallium nitride nucleation process is about 20 minutes；

3rd, temperature is risen into 1050 DEG C, gallium nitride micron rod structure epitaxial growth 2 hours；After the completion of growth with 5 degrees Celsius/ The speed of minute is down to 300 DEG C, then naturally cools to room temperature.

Referring to accompanying drawing 4, it is the use hydride vapour phase epitaxy method of the present embodiment offer in graphene/quartz compound substrate The upper scanning electron microscope diagram for growing obtained gallium nitride micron post；In figure, a figures are with high defect state low temperature solid-state carbon Its visible natural step in the scanning electron microscope diagram of source graphene, figure, shows without further handling just graphene The nucleating growth of gallium nitride can be achieved；B schemes and c scheme be respectively gallium nitride micron post top view and 30 ° of elevation angle side views, can be with See that micron post surface is very smooth；D figures are that sweeping after growing gallium nitride is attempted in the quartz substrate without graphene insert layer Electron micrograph is retouched, is as a result shown, in addition to some scattered polycrystalline particles, gallium nitride micron post can not be obtained, its reason exists It is difficult to the nucleation directly on quartz in gallium nitride.It can be proved by Fig. 4, graphene/quartz composite lining that the utility model is provided Bottom can smoothly realize the epitaxial growth of gallium nitride.

Cathode-ray fluorescent test is carried out to the gallium nitride micron post obtained by the present embodiment, cathode-ray is by 5KV-30KV Voltage is produced.Under the exciting of cathode-ray, the poor region of the luminous specific mass in the second best in quality region is luminous brighter.Referring to The scanning electron microscope diagram of one in accompanying drawing 5, the gallium nitride micron post provided for the present embodiment（Scheme a）And corresponding the moon Extreme ray fluorometric investigation figure（Scheme b）, except center pocket light it is dark in addition to, other regions are luminous clearly.Illustrate to prepare Gallium nitride micron post dislocation density it is relatively low, gallium nitride quality is higher.

Claims (3)

1. a kind of compound substrate/III-nitride micron rod structure, it is characterised in that：Described compound substrate is in dielectric material Upper growth graphene insert layer；III-nitride micron post is grown in graphene insert layer.

2. a kind of compound substrate according to claim 1/III-nitride micron rod structure, it is characterised in that：It is described micro- Meter Zhu height is 10~300um, a diameter of 10~300um.

3. a kind of compound substrate according to claim 1 or 2/III-nitride micron rod structure, it is characterised in that：It is being situated between Material grown on quartz graphene insert layer, grows GaN microns of posts in graphene insert layer.