CN206505949U - A kind of active brightness enhancement film - Google Patents
A kind of active brightness enhancement film Download PDFInfo
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- CN206505949U CN206505949U CN201621311566.7U CN201621311566U CN206505949U CN 206505949 U CN206505949 U CN 206505949U CN 201621311566 U CN201621311566 U CN 201621311566U CN 206505949 U CN206505949 U CN 206505949U
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- brightness enhancement
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Abstract
The utility model provides a kind of active brightness enhancement film.Metal nano-rod orientation in thin polymer film and at least one layer of thin polymer film containing metal nano-rod comprising at least one layer of doped quantum dot in active brightness enhancement film of the present utility model, the thin polymer film containing metal nano-rod is consistent and in periodic arrangement.Structure of reflection reducting coating of the present utility model is unique, can not only obtain red and green fluorescence that efficient quantum dot is sent, can also obtain the Efficient polarization light of light source wave band.Moreover, active brightness enhancement film cost economic of the present utility model, performance is even more more excellent than the DBEF films of 3M group, and then break the corner on the market that the multilayer diffusing reflection formula blast (DBEF) of 3M groups proposition is formed.
Description
Technical field
The utility model belongs to technical field of semiconductor illumination, is related to a kind of active brightness enhancement film, more particularly to one kind is included
The active of the thin polymer film of at least one layer of doped quantum dot and at least one layer of thin polymer film containing metal nano-rod adds lustre to
Film.
Background technology
Semiconductor lighting and display are a kind of based on efficient white light light emitting diode (White Light Emitting
Diode, WLED) novel illumination and Display Technique.Compared to conventional light source, with luminous efficiency is high, power consumption is few, reliability is high
And the advantages of long lifespan, it is acknowledged as one of 21 century high-tech sector most with prospects.
At present, focus of the fluorescent material due to the utilization in many key areas as research, mainly includes machine glimmering
Photoinitiator dye, fluorescin and quantum dot.Semiconductor-quantum-point has stronger fluorescence, high-light-fastness, wide excitation spectrum, fluorescence longevity
Life length, emission spectrum is narrow and adjustable.
Quantum dot (Quantum Dots, QDs), can claim nanocrystalline again, be a kind of by iii-v or II-VI group member
The nano particle of element composition.The particle diameter of quantum dot is typically in the range of between 1~10nm, and fluorescence can be launched after being excited.It launches light
Spectrum can be controlled by changing the size of quantum dot.It can be made by the size and its chemical composition that change quantum dot
Its emission spectrum covers whole visible region.By taking CdTe quantum as an example, when its particle diameter grows into 4.0nm from 2.5nm, it
Launch wavelength can be from 510nm red shift to 660nm.
At present, using the characteristics of luminescence of quantum dot, quantum dot can be applied in display device, monochromatic quantum dot is made
For the light emitting source of the backlight module of LCDs, monochromatic quantum dot sends monochromatic light and blue light after being excited by blue-ray LED
White background light is mixed to form, with larger colour gamut, picture quality can be improved.
In the new wide-gamut LED of quantum dot LED backlight+liquid crystal panel mode is shown, DBEF (Dual
Brightness Enhancement Film) it is a kind of blast overlapped by multilayer refractive anisotrop thin-film material
Film.From quantum dot LED send without polarisation, incide after DBEF, P polarization light passes through；And S-polarization light is reflected by DBEF, pass through
It is changed into no polarisation again after the diffusing reflection of backlight module substrate, is again incident on DBEF.S-polarization light can so be followed by DBEF
Ring is utilized, so as to improve the utilization rate for inciding light energy in liquid crystal panel, the effect in LED is shown is extremely important.But,
DBEF is mainly monopolized by 3M a companys of the U.S. for a long time, expensive, is cost in each optical thin film of LED backlight module
Highest part." DBEF " bloom capacity usage ratios technology is gone to turn into the study hotspot in LED display technique, while being also difficult
Point.
Wide colour gamut LED based on quanta point material show be Display Technique Main Trends of The Development, meanwhile, how in nothing
LED backlight outgoing P polarization state light is realized in the case of DBEF, breaks the monopolization of Minnesota Mining and Manufacturing Company, it has also become LED of new generation is shown
One of key point of technology development, for the application of white light LEDs, particularly QLED backlights display aspect is extremely important.And it is existing
Quantum dot composite material can not meet the Technical Board for the requirements such as the wet ability of wide colour gamut, linearly polarized light, antioxygen is strong, thermal conductivity is high simultaneously
Limit, it is impossible to provide a kind of new solution and product for wide colour gamut of new generation, low cost (no DBEF) LED display technique.Cause
This, prior art has yet to be improved and developed.
The content of the invention
The purpose of this utility model is to provide a kind of active brightness enhancement film.Active brightness enhancement film of the present utility model has specific
Structure, the unique combination mode of the quantum dot therein metal nano-rod consistent with orientation can obtain quantum in maximum efficiency
Fluorescence and the Efficient polarization light of light source wave band that point is sent, can preferably apply to QLED backlights and show.
For up to above-mentioned purpose, the utility model uses following technical scheme：
Mixed in a first aspect, the utility model is provided in a kind of active brightness enhancement film, the active brightness enhancement film comprising at least one layer
The thin polymer film of miscellaneous quantum dot and at least one layer of thin polymer film containing metal nano-rod, it is described containing metal nano-rod
Metal nano-rod orientation in thin polymer film is consistent and in periodic arrangement.
The thin polymer film of doped quantum dot in active brightness enhancement film of the present utility model can be one layer or many
Layer (number of plies M >=2), number of plies M is the positive integer more than or equal to 2, such as 2,3,4,5 or 6.
The thin polymer film containing metal nano-rod in active brightness enhancement film of the present utility model can be one layer, can also
Multilayer (number of plies N >=2), number of plies N is the positive integer more than or equal to 2, such as 2,3,4,6,7 or 8, is received when there is multilayer to contain metal
During the thin polymer film of rice rod, the orientation of the metal nano-rod in all thin polymer films containing metal nano-rod need to be ensured
It is consistent.
In active brightness enhancement film of the present utility model, the thin polymer film of multi-layer doping quantum dot can be with adjacent, can also be by
At least one layer of thin polymer film containing metal nano-rod is spaced apart.
In active brightness enhancement film of the present utility model, the thin polymer film that multilayer contains metal nano-rod can also may be used with adjacent
Separated with the thin polymer film by least one layer of doped quantum dot.
Preferably, if comprising only the thin polymer film of one layer of doped quantum dot, active blast in the active brightness enhancement film
One outer surface of film is the thin polymer film of doped quantum dot.
Preferably, if containing the thin polymer film of at least two layers doped quantum dot in the active brightness enhancement film, actively increase
Two outer surfaces of bright film are the thin polymer film of doped quantum dot.
Preferably, the thickness of the thin polymer film of the doped quantum dot be 0.0005mm~1mm, such as 0.0005mm,
0.0008mm、0.001mm、0.003mm、0.005mm、0.01mm、0.02mm、0.04mm、0.05mm、0.07mm、0.1mm、
0.12mm, 0.15mm, 0.35mm, 0.5mm, 0.6mm, 0.8mm or 1mm etc..
Preferably, the polymer in the thin polymer film of the doped quantum dot is selected from polymethyl methacrylate (poly
(methyl methacrylate, PMMA), polyvinylpyrrolidone (polyvinyl pyrrolidone, PVP) or polychlorostyrene second
In alkene (Polyvinyl chloride, PVC) any one or at least two combination.
Preferably, the quantum dot in the thin polymer film of the doped quantum dot can be monokaryon material or core
Shell cladded type just comes, and it can also be multilayer that the cladding shell in nucleocapsid cladded type material, which can be one layer, preferably include CdSe,
In CdTe, CdS, ZnSe, CdTe, CuInS, InP, CuZnSe, ZnMnSe any one or at least two mixture.
Preferably, the thickness of the thin polymer film containing metal nano-rod is 0.0005mm~1mm, for example
0.0005mm、0.001mm、0.003mm、0.005mm、0.007mm、0.01mm、0.02mm、0.03mm、0.05mm、0.06mm、
0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.2mm, 0.3mm, 0.35mm, 0.4mm, 0.5mm, 0.6mm, 0.8mm or 1mm etc..
Preferably, the polymer in the thin polymer film containing metal nano-rod is selected from polymethyl methacrylate
In PMMA, polyvinylpyrrolidone PVP or polyvinylchloride any one or at least two combination.
Preferably, in the thin polymer film containing metal nano-rod, the chemical composition of the metal nano-rod includes
In Au, Ag, Cu, Al, Fe or Zn any one or at least two combination.
The utility model is not construed as limiting to the pattern of metal nano-rod, can be bar-like material or line style etc. many
Plant pattern.
Preferably, in the thin polymer film containing metal nano-rod, the diameter of the metal nano-rod 1nm~
200nm, such as 1nm, 5nm, 10nm, 15nm, 20nm, 30nm, 40nm, 60nm, 70nm, 80nm, 100nm, 120nm, 140nm,
150nm, 160nm, 180nm or 200nm etc..
Preferably, the draw ratio of the metal nano-rod in the thin polymer film containing metal nano-rod is more than 1, for example
1.5th, 2,2.5,3,4,5,6,10,20,25,30,40,50,55,60,70,80,90,100 or 110 etc., preferably more than 3,
More preferably 3~5.
Preferably, in the thin polymer film containing metal nano-rod, the axle edge of two adjacent metal nano-rods is golden
Belong to the spacing lx of nanometer rods radial direction in 0~300nm, such as 0,5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 70nm,
100nm, 120nm, 130nm, 150nm, 160nm, 170nm, 190nm, 220nm, 240nm, 260nm, 280nm or 300nm etc..
Preferably, in the thin polymer film containing metal nano-rod, the same side of adjacent two metal nano-rods
Spacing l of the end face along metal nano-rod axial directionyIn 0~300nm, such as 0,10nm, 30nm, 50nm, 70nm, 80nm, 100nm,
130nm, 145nm, 160nm, 180nm, 200nm, 225nm, 260nm, 270nm, 280nm or 300nm etc..
Thin polymer film and at least one layer comprising at least one layer of doped quantum dot in active brightness enhancement film of the present utility model
Metal nano-rod orientation in thin polymer film containing metal nano-rod, the thin polymer film containing metal nano-rod it is consistent and
Periodic arrangement.Active brightness enhancement film of the present utility model had both combined quantum dot, and can to send stronger fluorescence, light resistance high, sharp
The characteristics of luminous spectrum width, fluorescence lifetime length, narrow and adjustable emission spectrum, periodic metal nano-rod is combined again to be had strongly
The characteristics of polarization, further adjusting parameter is combined, so as to get active brightness enhancement film except light source wave band can be obtained
Polarised light beyond, the fluorescence for the different-waveband that quantum dot is launched by light source activation can also be obtained.
In use, it is preferred that the thin polymer film side of doped quantum dot is placed close to light source, the active of this structure
Brightness enhancement film can also obtain light source ripple in addition to it can obtain the red and green fluorescence that enhanced efficient quantum dot is sent
The efficient polarised light of section.Active brightness enhancement film of the present utility model for QLED backlights can show etc. many as luminescent material
Plant purposes.
Second aspect, the utility model provides the application method of active brightness enhancement film as described in relation to the first aspect, the active
When in use, at least one outermost layer of the active increment film preferably used is the thin polymer film of doped quantum dot to brightness enhancement film,
And when using by outermost layer for doped quantum dot thin polymer film side close to light source, such as by active brightness enhancement film and backlight mould
When group is combined, combined by the thin polymer film side of doped quantum dot with backlight module.
Compared with the prior art, the utility model has the advantages that：
(1) the utility model thin polymer film by the thin polymer film of doped quantum dot and containing metal nano-rod first
Combine, and control Parameter Conditions therein, obtain the active brightness enhancement film of excellent performance, the active blast of the unique texture
Film can obtain red and green fluorescence and the Efficient polarization light of light source wave band that efficient quantum dot is sent simultaneously.
(2) active brightness enhancement film cost economic of the present utility model, performance is even more more excellent than the DBEF films of 3M group, can
The corner on the market that the marketable product formed with breaking the multilayer diffusing reflection formula blast (DBEF) proposed at present by U.S. 3M is formed.
(3) active brightness enhancement film of the present utility model when in use preferably places the thin polymer film side of doped quantum dot
Close to light source, the purpose is to make quantum dot absorb the blue no polarization light of light source transmitting in maximum efficiency, and then in maximum efficiency
Obtain quantum dot fluorescence.
(4) active brightness enhancement film of the present utility model can realize LED backlight outgoing P polarization state light in the case of without DBEF,
Break the monopolization of Minnesota Mining and Manufacturing Company, reduce further manufacturing cost.
Brief description of the drawings
Fig. 1 a are the structural representations of the active brightness enhancement film of the utility model embodiment 1, wherein, 1 is doped quantum dot
Thin polymer film, 2 be the thin polymer film containing metal nano-rod；
Fig. 1 b are that the structure of the thin polymer film of the doped quantum dot in the active brightness enhancement film of the utility model embodiment 1 is shown
It is intended to, wherein, 11 be polymer substrate, and 12 be quantum dot；
Fig. 1 c are the knots of the thin polymer film containing metal nano-rod in the active brightness enhancement film of the utility model embodiment 1
Structure schematic diagram, wherein, 21 be polymer substrate, and 22 be metal nano-rod, r0For the radius of metal nano-rod, l0For metal nano
The length of rod, LxAnd LyRespectively spacing distance of the metal nano-rod in x-axis and y-axis.
Fig. 2 is the structural representation of the active brightness enhancement film of the utility model embodiment 2, wherein, 1 is the poly- of doped quantum dot
Compound film, 2 be the thin polymer film containing metal nano-rod；
Fig. 3 is the structural representation of the active brightness enhancement film of the utility model embodiment 3, wherein, 1 is the poly- of doped quantum dot
Compound film, 2 be the thin polymer film containing metal nano-rod；
Fig. 4 is the structural representation of the active brightness enhancement film of the utility model embodiment 4, wherein, 1 is the poly- of doped quantum dot
Compound film, 2 be the thin polymer film containing metal nano-rod.
Embodiment
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by embodiment.
Embodiment 1
A kind of active brightness enhancement film, as shown in Figure 1a, the active brightness enhancement film by one layer of doped quantum dot thin polymer film 1
And stick to one layer of thin polymer film 2 containing metal nano-rod on the surface of the thin polymer film of the doped quantum dot and constitute；
The thin polymer film 1 of doped quantum dot includes polymer substrate 11 and scattered quantum dot 12 in the polymer matrix
(structural representation of the thin polymer film of doped quantum dot is shown in Fig. 1 b)；Thin polymer film 2 containing metal nano-rod includes poly-
Polymer matrix 21 and scattered periodic arrangement in the polymer matrix are orientated consistent metal nano-rod 22 and (contain metal nano
The structural representation of the thin polymer film of rod is shown in Fig. 1 c)；
The thickness of the thin polymer film 1 of doped quantum dot is 1mm, and polymer substrate 11 therein is poly-methyl methacrylate
Ester, quantum dot therein is CdSe quantum dot；
The thickness of thin polymer film 2 containing metal nano-rod is 0.01mm, and polymer substrate 21 therein is poly- methyl
Methyl acrylate, metal nano-rod therein is gold nanorods, a length of 100nm of rod, a diameter of 30nm of rod, two adjacent metals
Spacing l of the axle of nanometer rods along metal nano-rod radial directionxIn 100nm, the same side of adjacent two metal nano-rods
Spacing l of the face along metal nano-rod axial directionyIn 200nm.
Embodiment 2
A kind of active brightness enhancement film, as shown in Fig. 2 thin polymer film 1 of the active brightness enhancement film by two layers of doped quantum dot
And one layer of thin polymer film 2 containing metal nano-rod is constituted, the thin polymer film 1 of two layers of doped quantum dot is adhered to respectively
In the upper and lower surface of the thin polymer film 2 for containing metal nano-rod；
The thin polymer film 1 of doped quantum dot includes polymer substrate 11 and scattered quantum dot in the polymer matrix
12；Thin polymer film 2 containing metal nano-rod includes polymer substrate 21 and scattered periodicity row in the polymer matrix
The consistent metal nano-rod 22 of row orientation；
Stick to the thickness of the thin polymer film of the doped quantum dot of the upper surface of the thin polymer film 2 containing metal nano-rod
Spend for 0.01mm, polymer substrate 11 therein is polyvinylpyrrolidone, quantum dot therein is CdTe；
Stick to the thickness of the thin polymer film of the doped quantum dot of the lower surface of the thin polymer film 2 containing metal nano-rod
Spend for 0.01mm, polymer substrate 11 therein is polymethyl methacrylate, quantum dot therein is CdTe；
The thickness of thin polymer film containing metal nano-rod is 0.8mm, and polymer substrate 21 therein is poly- methyl-prop
E pioic acid methyl ester, metal nano-rod therein is Silver nanorod, and a length of 200nm of rod, a diameter of 60nm of rod, two adjacent metals are received
Spacing l of the axle of rice rod along metal nano-rod radial directionxIn 50nm, the same side end face edge of adjacent two metal nano-rods
The spacing l of metal nano-rod axial directionyIn 80nm.
Embodiment 3
A kind of active brightness enhancement film, as shown in figure 3, thin polymer film 1 of the active brightness enhancement film by two layers of doped quantum dot
And two layers of thin polymer film 2 containing metal nano-rod is constituted, the thin polymer film 1 of the doped quantum dot and described contain gold
The thin polymer film 2 of category nanometer rods is arranged at intervals, and is followed successively by from top to bottom：The thin polymer film of doped quantum dot, contain gold
Belong to thin polymer film, the thin polymer film of doped quantum dot and the thin polymer film containing metal nano-rod of nanometer rods；
The thin polymer film 1 of doped quantum dot includes polymer substrate 11 and scattered quantum dot in the polymer matrix
12；Thin polymer film 2 containing metal nano-rod includes polymer substrate 21 and scattered periodicity row in the polymer matrix
The consistent metal nano-rod 22 of row orientation；
Thickness positioned at the thin polymer film of the doped quantum dot of the superiors is 0.01mm, and polymer substrate 11 therein is
Polyvinyl chloride, quantum dot therein is CdSe；
It is 1mm, polymer matrix therein positioned at the thickness of the thin polymer film containing metal nano-rod of upper several second layers
21 be polymethyl methacrylate, and metal nano-rod therein is gold nanorods, and a length of 70nm of rod, rod a diameter of 10nm are adjacent
Two metal nano-rods spacing l of the axle along metal nano-rod radial directionxIn 40nm, adjacent two metal nano-rods
Spacing ly of the same side end face along metal nano-rod axial direction is in 80nm；
It is 0.005mm, polymer matrix therein positioned at the thickness of the thin polymer film of the doped quantum dot of upper several third layer
Matter 11 is polyvinylpyrrolidone, and quantum dot therein is CdTe；
It is 0.9mm, compound base therein positioned at the thickness of the bottom one layer thin polymer film containing metal nano-rod
Matter 21 is polymethyl methacrylate, and metal nano-rod therein is gold nanorods, a length of 70nm of rod, a diameter of 10nm of rod, phase
Spacing l of the axle of two adjacent metal nano-rods along metal nano-rod radial directionxIn 40nm, two adjacent metal nano-rods
Same side end face along metal nano-rod axial direction spacing ly in 80nm；
Wherein, the orientation of all metal nano-rods in the active brightness enhancement film of the present embodiment is consistent.
Embodiment 4
A kind of active brightness enhancement film, as shown in figure 4, thin polymer film 1 of the active brightness enhancement film by two layers of doped quantum dot
And one layer of thin polymer film 2 containing metal nano-rod is constituted, be followed successively by from top to bottom doped quantum dot thin polymer film 1,
The thin polymer film 1 of doped quantum dot and the thin polymer film 2 containing metal nano-rod；
It is 0.002mm, polymer substrate 11 therein positioned at the thickness of the thin polymer film of the doped quantum dot of the superiors
For polymethyl methacrylate, quantum dot therein is CdSe；
It is 0.005mm, polymer matrix therein positioned at the thickness of the thin polymer film of the doped quantum dot of upper several second layers
Matter 11 is polyvinyl chloride, and quantum dot therein is ZnSe；
It is 0.5mm, compound base therein positioned at the thickness of the bottom one layer thin polymer film containing metal nano-rod
Matter 21 is polymethyl methacrylate, and metal nano-rod therein is Silver nanorod, and a length of 50nm of rod, rod a diameter of 5nm are adjacent
Two metal nano-rods spacing l of the axle along metal nano-rod radial directionxIn 100nm, two adjacent metal nano-rods
Same side end face along metal nano-rod axial direction spacing ly in 150nm.
Applicant states that above-described embodiment is only to illustrate technical concept of the present utility model and feature, and its object is to allow
Person skilled in the art can understand content of the present utility model and implement according to this, can not limit the utility model with this
Protection domain.All equivalent transformations done according to the utility model Spirit Essence or modification, should all cover in the utility model
Protection domain within.
Claims (8)
1. a kind of active brightness enhancement film, it is characterised in that the polymerization of at least one layer of doped quantum dot is included in the active brightness enhancement film
In thing film and at least one layer of thin polymer film containing metal nano-rod, the thin polymer film containing metal nano-rod
Metal nano-rod orientation is consistent and in periodic arrangement；
Wherein, the thickness of the thin polymer film of the doped quantum dot is 0.05mm~0.35mm；
The thickness of the thin polymer film containing metal nano-rod is 0.005mm~0.02mm.
2. active brightness enhancement film according to claim 1, it is characterised in that in the active brightness enhancement film, the doping quantum
The number of plies of the thin polymer film of point is more than or equal to 2.
3. active brightness enhancement film according to claim 1 or 2, it is characterised in that the polymer containing metal nano-rod
The orientation for whole metal nano-rods that the number of plies of film is more than or equal in 2, and the active brightness enhancement film is consistent.
4. active brightness enhancement film according to claim 1, it is characterised in that mixed if comprising only one layer in the active brightness enhancement film
The thin polymer film of the thin polymer film of miscellaneous quantum dot, then doped quantum dot described in active brightness enhancement film a outer surface.
5. active brightness enhancement film according to claim 1, it is characterised in that if containing at least two layers in the active brightness enhancement film
The thin polymer film of doped quantum dot, then the two of active brightness enhancement film outer surface is the thin polymer film of doped quantum dot.
6. active brightness enhancement film according to claim 1, it is characterised in that the thin polymer film containing metal nano-rod
In, the diameter of the metal nano-rod is in 1nm~200nm.
7. active brightness enhancement film according to claim 1, it is characterised in that the thin polymer film containing metal nano-rod
In, the draw ratio of the metal nano-rod is 3~5.
8. the active brightness enhancement film according to claim 1, it is characterised in that the polymer thin containing metal nano-rod
In film, the spacing l of the axles of adjacent two metal nano-rods along metal nano-rod radial directionxIn 0~300nm；Adjacent two
Spacing l of the same side end face of individual metal nano-rod along metal nano-rod axial directionyIn 0~300nm.
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| CN201621311566.7U CN206505949U (en) | 2016-11-30 | 2016-11-30 | A kind of active brightness enhancement film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490529A (en) * | 2018-01-22 | 2018-09-04 | 南京贝迪电子有限公司 | A kind of quantum dot light guiding film and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108490529A (en) * | 2018-01-22 | 2018-09-04 | 南京贝迪电子有限公司 | A kind of quantum dot light guiding film and preparation method thereof |
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Effective date of registration: 20180321 Address after: The streets of Buji Gan Li Industrial Park of Longgang District, Shenzhen City, Guangdong province 518000 six road No. 12 Gan Li Hisense innovation industrial city 19A Building 2 layer Patentee after: SHENZHEN PLANCK INNOVATION TECHNOLOGY Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Nanshan District Taoyuan Xueyuan Road 1088 Street Co-patentee before: Sun Xiaowei Patentee before: Shenzhen Nanke big asset management Ltd. |
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Effective date of registration: 20230113 Address after: No. 1088, Xueyuan Avenue, Nanshan District, Shenzhen, Guangdong 518000 Patentee after: Sun Xiaowei Patentee after: Shenzhen Pulang Quantum Semiconductor Co.,Ltd. Address before: 518000 2nd floor, building 19A, China Hisense innovation industry city, No.12, Ganli 6th Road, Ganli Industrial Park, Buji street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN PLANCK INNOVATION TECHNOLOGY Co.,Ltd. |
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