CN2064504U - Pressure sensitive components - Google Patents
Pressure sensitive components Download PDFInfo
- Publication number
- CN2064504U CN2064504U CN 89205181 CN89205181U CN2064504U CN 2064504 U CN2064504 U CN 2064504U CN 89205181 CN89205181 CN 89205181 CN 89205181 U CN89205181 U CN 89205181U CN 2064504 U CN2064504 U CN 2064504U
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- CN
- China
- Prior art keywords
- silicon
- pressure sensitive
- flatness
- utility
- model
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model discloses a new-type pressure sensitive component belonging to a pressure sensitive sensor prepared by high-flatness silicon diaphragms. The utility model is composed of a silicon layer, a dielectric layer, and the silicon diaphragms. The utility model is characterized in that the silicon diaphragms are composed of silicon diaphragms with high flatness and uniform thickness; the silicon diaphragms are manufactured through the adoption of the significant difference in the erosion rate of heterogeneous materials in the same erosion liquid; a heterojunction interface is used as an erosion self-stop interface; the eroded silicon diaphragms have high flatness and uniform thickness; consequently, the high precision and the good consistency of the pressure sensitive component are ensured.
Description
The utility model is a kind of force-sensing sensor by the preparation of high-flatness silicon diaphragm, belongs to the semiconductor transducer technical field.
In existing Silicon pressure Sensitive Apparatus, its silicon diaphragm all is the difference preparation that utilizes the different silicon layer corrosion rate in same corrosive liquid of resistivity or conduction type, with the p of silicon
--p
+, n
--n
+, the interface of p-n junction etc. stops the interface certainly as corrosion, thus the thickness of control silicon diaphragm.Because the thickness evenness and the profile pattern of this silicon diaphragm are relatively poor, thereby influence the precision and the consistance of Silicon pressure Sensitive Apparatus.
The purpose of this utility model is at the deficiencies in the prior art, and the pressure-sensitive component of the new structure of a kind of high-flatness and high conformity is provided.
The utility model is made up of silicon layer, dielectric layer and silicon diaphragm, and its characteristics are that silicon diaphragm is made of high-flatness and the uniform silicon diaphragm of thickness, and its flatness can reach ± and 50
, thickness evenness can reach ± 1 μ m.Silicon diaphragm of the present utility model adopts the significant difference of dissimilar materials corrosion rate in same corrosive liquid to make, with heterojunction boundary as corrosion from stopping the interface, make the silicon diaphragm after the corrosion have high-flatness and homogeneous thickness.
The utility model is owing to adopt high-flatness and the uniform silicon diaphragm of thickness constitutes, thereby has high conformity and precision advantages of higher, and is easy and simple to handle in the processes process, ensures the quality of products easily.
Fig. 1 is a structural representation of the present utility model; Fig. 2 is the structural representation in the process.
The utility model can be taked as shown in drawings, and scheme realizes: a kind of capacitive pressure Sensitive Apparatus, as shown in Figure 1.Utilize that ion injects, the SDB(Si direct bonding) or SOI(semiconductor such as double heterojunction extension on prepare insulation course) technology prepares both sides and respectively has certain thickness silicon layer (1), dielectric layer (2) can adopt silicon dioxide (SiO
2) or silicon nitride (Si
3N
4) wait insulation course, shown in Fig. 2 (a); The certain thickness SiO of growth on the silicon layer of both sides
2Film (6) is shown in Fig. 2 (b); Form capacitance gap (5) by photoetching and corrosion in thin silicone layer one side, shown in Fig. 2 (c); Through photoetching and corrosion capacitance gap (5) The corresponding area of opposite side silicon layer is corroded to Si-SiO again
2The interface is so that form the deep trouth (3) of exerting pressure, shown in Fig. 2 (d); Remove the SiO of superficial layer
2With the SiO in the deep etch groove
2Layer promptly forms capacitive pressure Sensitive Apparatus shown in Figure 1.
Claims (2)
1, a kind of pressure-sensitive component by the preparation of high-flatness silicon diaphragm is made up of silicon layer, dielectric layer and silicon diaphragm, it is characterized in that silicon diaphragm is made of high-flatness and the uniform silicon diaphragm of thickness, and its flatness can reach 50
, thickness evenness can reach 1 μ m.
2,, it is characterized in that dielectric layer can adopt insulation courses such as silicon dioxide or silicon nitride according to the described pressure-sensitive component of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89205181 CN2064504U (en) | 1989-06-23 | 1989-06-23 | Pressure sensitive components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89205181 CN2064504U (en) | 1989-06-23 | 1989-06-23 | Pressure sensitive components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2064504U true CN2064504U (en) | 1990-10-24 |
Family
ID=4862390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89205181 Withdrawn CN2064504U (en) | 1989-06-23 | 1989-06-23 | Pressure sensitive components |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2064504U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327202C (en) * | 2005-01-14 | 2007-07-18 | 清华大学 | Temperature sensor based on disordered multi-wall carbon nano-tube and metal heterojunction |
| CN1327201C (en) * | 2005-01-14 | 2007-07-18 | 清华大学 | Temperature sensor based on ordered multi-wall carbon nano-tube bundle and metal heterojunction |
| KR20230081514A (en) * | 2021-11-30 | 2023-06-07 | 하이비스 주식회사 | Pressure sensor being able to measure the pressure homogeneously by pressing means |
-
1989
- 1989-06-23 CN CN 89205181 patent/CN2064504U/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327202C (en) * | 2005-01-14 | 2007-07-18 | 清华大学 | Temperature sensor based on disordered multi-wall carbon nano-tube and metal heterojunction |
| CN1327201C (en) * | 2005-01-14 | 2007-07-18 | 清华大学 | Temperature sensor based on ordered multi-wall carbon nano-tube bundle and metal heterojunction |
| KR20230081514A (en) * | 2021-11-30 | 2023-06-07 | 하이비스 주식회사 | Pressure sensor being able to measure the pressure homogeneously by pressing means |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |