CN206412633U - A kind of DFB semiconductor laser - Google Patents
A kind of DFB semiconductor laser Download PDFInfo
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- CN206412633U CN206412633U CN201720051403.8U CN201720051403U CN206412633U CN 206412633 U CN206412633 U CN 206412633U CN 201720051403 U CN201720051403 U CN 201720051403U CN 206412633 U CN206412633 U CN 206412633U
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Abstract
The utility model is related to a kind of DFB semiconductor laser, including：Ridge waveguide laser, grating and detector, wherein, ridge waveguide laser is located at substrate surface close to the region of light output end, grating and detector are located at outside the chamber of ridge waveguide laser, grating etches into substrate layer and close to ridge waveguide laser, detector is located at substrate surface close to the region of backlight end face, and close to grating.The utility model is by using Single-Chip Integration grating and detector outside laser chamber, compared with conventional DFB semiconductor laser, and the secondary burial without grating grows；Without additional back light detector chip for device application, device cost can be effectively reduced.
Description
Technical field
The utility model is related to a kind of semiconductor laser, and in particular to a kind of DFB (distributed Feedback) semiconductor laser
Device.
Background technology
In fiber optic communication, semiconductor laser due to small volume, efficiency high, it is low in energy consumption, be easily integrated the advantages of,
As the core signal emission source in optical communication field, Distributed Feedback Laser is due to its single-mode output, output in semiconductor laser
Spectrum is narrow, significantly reduce light transmit in a fiber caused by dispersive broadening, be very suitable for applying in High Speed Modulation and
In long-distance optical fiber communication.
For DFB semiconductor laser, method main at present is by double light on the grating layer of epitaxial material
The grating of beam holographic exposure method manufacturing cycle uniformity, then grating is buried by MOCVD growing technologies, complete the system of epitaxial wafer
Make.The preparation technology is required for diauxic growth technology, adds the difficulty of preparation.On the other hand, in actual applications either
The TO-CAN devices or Butterfly devices of encapsulation, it encapsulates inside in addition to conventional Distributed Feedback Laser, in laser
PD chips are needed at backlight, for indirect monitoring laser works situation.
Utility model content
In order to solve the above-mentioned technical problem, the utility model provides a kind of DFB semiconductor laser, utilizes single-chip collection
The technology of the outer grating of coelosis and detector, it is to avoid diauxic growth and need the cost of extra addition PD chips so that technique letter
Change, effectively reduction device holistic cost.
The utility model proposes technical scheme it is as follows.
A kind of DFB semiconductor laser, including：Ridge waveguide laser, grating and detector, wherein, ridge waveguide swashs
Light device is located at substrate surface and is located at close to the region of light output end, grating and detector outside the chamber of ridge waveguide laser, grating
Etch into substrate layer and close to ridge waveguide laser, detector is located at substrate surface close to the region of backlight end face, and close
Grating.
Further, the substrate uses MQW epitaxial structure.
Further, the substrate include N-InP substrate layers, N-InP cushions, AlGaInAs lower waveguide layers,
The upper ducting layer of AlGaInAs multiple quantum well active layers, AlGaInAs, P-InP walls, P-InGaAsP etch stop layers, P-InP
Space layer, P-InGaAsP transition zones, P+- InGaAs heavy doping ohmic contact layer and P-InP protective layers.
Further, the upper ducting layers of AlGaInAs and the ducting layer that AlGaInAs lower waveguide layers are content gradually variational.
Further, the ridge waveguide structure of the ridge waveguide laser includes P-InGaAsP etch stop layers, P-
InP space layers, P-InGaAsP transition zones and P+- InGaAs heavy doping ohmic contact layers.
Further, the ridge of ridge waveguide structure is deep 1.8 μm, and wide ridge is respectively 2.0 μm and 1.8 μm up and down.
Further, the grating is periodicity uniform grating.
Further, the grating surface is covered with BCB.
Further, in addition to the laser metal-coated region positioned at the ridge waveguide surface of ridge waveguide laser and
Positioned at the metal detector overlay area of detector surface.
Further, light output end evaporation has a pair of Si/Al2O3High transmittance film；The evaporation of backlight end face has two couples of Al2O3/ Si is high
Anti- film.
The beneficial effects of the utility model：
The utility model uses InP-base egative film grown buffer layer, waveguiding structure active region layer, etching-stop in the above
The formation substrate such as layer, space layer, electric contacting layer, technique preparation is carried out to substrate, i.e., in single tube core, close to light extraction petiolarea
Domain prepares ridge waveguide structure laser；In backlight area, the region adjacent with RWG lasers uses ICP dry etchings, realized
Periodic outside RWG laser chambers, its grating etches into substrate layer, grating close to backlight end face be detector；Using
BCB is covered to grating, plays a part of protecting grating；Electrode is prepared, high transmittance film finally is deposited to light output end, to backlight
High-reflecting film is deposited in end face, forms the DFB semiconductor laser for integrating the outer grating of coelosis and detector, the device prepares same
When possess laser output and monitoring back light function.
The utility model is by using Single-Chip Integration grating and detector outside laser chamber, with conventional DFB half
Conductor laser is compared, and the secondary burial without grating grows；Without additional back light detector core for device application
Piece, can effectively reduce device cost.
Brief description of the drawings
Fig. 1 be the utility model proposes DFB semiconductor laser preparation method FB(flow block)；
Fig. 2 be the utility model proposes DFB semiconductor laser epitaxial slice structure figure；
Fig. 3 be the utility model proposes DFB semiconductor laser positive structure schematic；
Fig. 4 be the utility model proposes DFB semiconductor laser side structure schematic diagram.
Description of reference numerals：
1：N-InP substrate layers, 2：N-InP cushions, 3：AlGaInAs lower waveguide layers, 4：AlGaInAs MQWs are active
Layer, 5：The upper ducting layers of AlGaInAs, 6：P-InP walls, 7：P-InGaAsP etch stop layers；8：P-InP space layers, 9：P-
InGaAsP transition zones, 10：P+- InGaAs heavy doping ohmic contact layers, 11：P-InP protective layers, 12：Ridge waveguide laser,
13：Grating, 14：Detector, 15：Laser metal-coated region, 16：Metal detector overlay area, 17：BCB, L1：Ridge
The chamber of waveguiding structure laser is long, L2：The length of the outer grating of chamber, L3：The length of detector.
Embodiment
For the purpose of this utility model, technical scheme and advantage is more clearly understood, below in conjunction with specific embodiment, and
Referring to the drawings, the utility model is further described.But those skilled in the art know, the utility model is not limited to
Accompanying drawing and following examples.
The utility model proposes a kind of DFB semiconductor laser preparation method as shown in figure 1, comprising the following steps：
Step S11, prepare substrate：On N-InP substrate layers, MOCVD (metal-organic ligand method) forming amount
Sub- well structure and epitaxial structure, as shown in Figure 2；
Step S12, prepare ridge waveguide structure：Photoetching is carried out on substrate surface prepared by step S11, wet etching,
Ridge waveguide (RWG, ridge waveguide) structure is formed in the zonal corrosion close to light output end, as shown in Figure 3 and Figure 4,
Direction in Fig. 3 shown in arrow is light direction；
Step S13, prepare chamber external structure：Adopted by step S12 substrate surface close to the region of ridge waveguide structure
With dry etching, the periodicity uniform grating 13 for etching into substrate layer is formed outside the chamber of RWG lasers 12；And it is close in grating 13
The region of backlight end face forms detector 14, as shown in Figure 3 and Figure 4；
Step S14, prepare single tube core：In grating surface covering BCB (benzocyclobutane olefine resin) 17, as shown in figure 4, light
Carve, with the surface perforate of detector 14 above ridge waveguide, evaporate front metal；It is thinned, evaporates back metal, alloy formation PN
Face Ohmic contact；Bar is solved, high transmittance film is deposited in light output end, high-reflecting film is deposited in backlight end face, dissociation forms single tube core.
Wherein, step S11 comprises the following steps：On two inches of N-InP substrate layers 1, pass through MOCVD (Organometallics
Learn vapor deposition method) epitaxial growth N-InP cushions 2, AlGaInAs lower waveguide layers 3, AlGaInAs MQWs are active successively
Layer 4, the upper ducting layers 5 of AlGaInAs, P-InP walls 6, P-InGaAsP etch stop layers 7, P-InP space layers 8, P-
InGaAsP transition zones 9, P+- InGaAs heavy doping ohmic contact layer 10 and P-InP protective layers 11, as shown in Figure 2.
Wherein, the thickness of N-InP cushions 2 can be 800nm；
The thickness of AlGaInAs lower waveguide layers 3 can be 60nm, and wherein AlGaInAs lower waveguide layers 3 use content gradually variational material
Material, by adjusting limitation of the material component realization to carrier and photon；
Active area of the AlGaInAs multiple quantum well active layers 4 containing 4 AlGaInAs SQWs, quantum well thickness 8nm, light
Photoluminescence wavelength 1525nm or so；
The upper ducting layers 5 of AlGaInAs are similar with the content gradually variational of AlGaInAs lower waveguide layers 3；
The thickness of P-InP walls 6 is 100nm；
The thickness of P-InGaAsP etch stop layers 7 is 30nm；
The thickness of P-InP space layers 8 is 1600nm；
The thickness of P-InGaAsP transition zones 9 is 50nm；
P+- InGaAs heavy doping ohmic contact layer 10 can be 150nm as electric contacting layer, its thickness, and doping concentration is big
In 1 × 1019cm-3；
The thickness of P-InP protective layers 11 is 10nm.
Step S12 may comprise steps of：
Rinsed using HCl, corrosion removes the P-InP protective layers 11 of substrate surface, and with deionized water rinsing, nitrogen blows
It is dry, PECVD (plasma enhanced chemical vapor deposition method) deposition 150nm SiO2Dielectric layer；
Close to 250 μm of regions of tube core light output end, ridge pattern, RIE etchings SiO are being lithographically formed2, remove photoresist；Make successively
Use Br:HBr:H2O solution and H3PO4:HCl solution carries out ridge control corrosion rate, and corrosion to P-InGaAsP etch stop layers 7 is formed
The ridge waveguide structure of laser 12.
Preferably, the ridge of ridge structure is deep about 1.8 μm, and ridge is wide up and down respectively may be about 2.0 μm and 1.8 μm.
Step S13 may comprise steps of：
Photoetching dry etching formation grating pattern in 50 μm of regions outside laser chamber, screen periods are controlled at 3.75 μm
Left and right, wherein InP length is 1.17 μm or so in a screen periods, using Cl2:CH4:H2Gas carries out ICP to grating
Etching, etching depth is controlled at 5 μm or so, the adjacent area formation cycle uniform grating outside laser chamber.
Simultaneously in another end regions about 100um or so of chip, complete epitaxial structure and active area is contained in this section of region,
When adding direction to bias on its surface, light jump can be absorbed in active area carriers when entering detector for the light through grating
Move to produce photoelectric current, serve the effect of backlight detection.Then the InP-base material for forming grating is surface-treated：
With 5s is rinsed in 10%HF solution, oxide on surface, deionized water rinsing are removed；Use HBr:Br2：H2O solution rinses 10s, removes
Due to surfacing defect caused by dry etching, deionized water rinsing, nitrogen drying；Remove surface media, PECVD depositions
400nmSiO2Passivation layer.
The method to set up of wherein screen periods is：
Optical communicating waveband InP semi-conducting materials and BCB refractive index respectively 3.3 and 1.5 or so, DFB gratings and swash
Ejected wave length meets following relational expression：
Wherein ΛInPAnd ΛBCBInP and BCB length, n respectively in a screen periodsInPAnd nBCBRespectively InP
With BCB refractive index, m is grating series, and λ is laser works wavelength.If m=10, it can calculate when laser works exist
During 1550nm wavelength, InP and BCB length is respectively in a cycle：1.17 μm and 2.58 μm, screen periods are 3.75 μ
m。
Preferably, a length of 400 μm of single tube core chamber, wherein the ridge waveguide structure laser chamber close to light output end is a length of
250 μm, grating is 50 μm long outside the chamber being connected with laser；Detector area length of field is 100 μm；Die width is 250 μm.
Step S14 may comprise steps of：BCB spin coatings, BCB front bakings, photoetching, BCB development front bakings, development removes laser
Device surface and searching surface BCB glue, dry after BCB developments, carry out curing process to BCB using combination alternating temperature temperature, form BCB
The uniform grating constituted with semi-conducting material, BCB plays a protective role to material.Spin coating, photoetching again, to the ridge of laser 12
The laser metal-coated region 15 of waveguide surface and the metal detector overlay area 16 on the surface of detector 14 carry out perforate, carve
Lose opening area surface SiO2Layer, is handled opening area surface, electron beam evaporation P faces metal Ti/Pt/Au (50nm/
50nm/800nm), N faces physical grinding is thinned to 100-110 μm, electron beam evaporation N faces metal Ti/Pt/Au (50nm/
100nm/600nm), sample is placed in quick anneal oven and carries out alloy：N2400 DEG C of alloy 50s in atmosphere；It is dissociated into bar
(bar) bar, 400 μm of bar bar chambers length；End face optical film is finally deposited：A pair of Si/Al of exiting surface electron beam evaporation plating2O3High transmittance film,
Reflectivity is controlled 2% or so, for weakening the feedback effect of Cavity surface；Shady face evaporates two couples of Al2O3/ Si high-reflecting films, mainly
In order to protect detector chip end face and carry high light reflectivity, reflectivity is controlled 90% or so；Test, dissociation completes chip system
It is standby.
The utility model also proposed laser made from a kind of preparation method according to DFB semiconductor laser, such as scheme
2nd, shown in Fig. 3 and Fig. 4, including：Ridge waveguide laser 12, grating 13 and detector 14, wherein 12, ridge waveguide laser
In substrate surface close to the region of light output end, grating 13 etches into N-InP substrate layers 1 and close to ridge waveguide laser 12,
Detector 14 is located at substrate surface close to the region of backlight end face, and close to grating 13.
The surface of grating 13 is covered with BCB 17, as shown in Figure 4.
The substrate is included on N-InP substrate layers 1, outer successively by MOCVD (metal-organic ligand method)
The N-InP cushions 2 of epitaxial growth, AlGaInAs lower waveguide layers 3, AlGaInAs multiple quantum well active layers 4, the upper waveguides of AlGaInAs
Layer 5, P-InP walls 6, P-InGaAsP etch stop layers 7, P-InP space layers 8, P-InGaAsP transition zones 9, P+-InGaAs
Heavy doping ohmic contact layer 10 and P-InP protective layers 11, as shown in Figure 2.
Wherein, the thickness of N-InP cushions 2 can be 800nm；
The thickness of AlGaInAs lower waveguide layers 3 can be 60nm, and wherein AlGaInAs lower waveguide layers 3 use content gradually variational material
Material, by adjusting limitation of the material component realization to carrier and photon；
Active area of the AlGaInAs multiple quantum well active layers 4 containing 4 AlGaInAs SQWs, quantum well thickness 8nm, light
Photoluminescence wavelength 1525nm or so；
The upper ducting layers 5 of AlGaInAs are similar with the content gradually variational of AlGaInAs lower waveguide layers 3；
The thickness of P-InP walls 6 is 100nm；
The thickness of P-InGaAsP etch stop layers 7 is 30nm；
The thickness of P-InP space layers 8 is 1600nm；
The thickness of P-InGaAsP transition zones 9 is 50nm；
P+- InGaAs heavy doping ohmic contact layer 10 can be 150nm as electric contacting layer, its thickness, and doping concentration is big
In 1 × 1019cm-3；
The thickness of P-InP protective layers 11 is 10nm.
Preferably, the ridge of ridge waveguide structure is deep about 1.8 μm, and ridge is wide up and down respectively may be about 2.0 μm and 1.8 μm.
Preferably, a length of 400 μm of single tube core chamber, wherein the chamber of ridge waveguide structure laser 12 close to light output end is long
L1 is that the length L2 of grating 13 is 50 μm outside 250 μm, the chamber being connected with laser 12；The length L3 of detector 14 is 100 μm；Tube core is wide
Spend for 250 μm.
Preferably, a pair of Si/Al of light output end electron beam evaporation plating2O3High transmittance film, reflectivity is controlled 2% or so, for subtracting
The feedback effect of weak Cavity surface；Backlight end face evaporates two couples of Al2O3/ Si high-reflecting films, primarily to protection detector chip end face is simultaneously
High light reflectivity is carried, reflectivity is controlled 90% or so.
More than, embodiment of the present utility model is illustrated.But, the utility model is not limited to above-mentioned implementation
Mode.It is all it is of the present utility model spirit and principle within, any modification, equivalent substitution and improvements done etc. should be included in
Within protection domain of the present utility model.
Claims (10)
1. a kind of DFB semiconductor laser, it is characterised in that including：Ridge waveguide laser, grating and detector, wherein, ridge
Type waveguide laser is located at substrate surface close to the region of light output end, and grating and detector are located at the chamber of ridge waveguide laser
Outside, grating etches into substrate layer and close to ridge waveguide laser, and detector is located at substrate surface close to the region of backlight end face,
And close to grating.
2. DFB semiconductor laser according to claim 1, it is characterised in that the substrate uses MQW extension
Structure.
3. DFB semiconductor laser according to claim 2, it is characterised in that the substrate include N-InP substrate layers,
Between N-InP cushions, AlGaInAs lower waveguide layers, AlGaInAs multiple quantum well active layers, the upper ducting layers of AlGaInAs, P-InP
Interlayer, P-InGaAsP etch stop layers, P-InP space layers, P-InGaAsP transition zones, P+- InGaAs heavy doping Ohmic contacts
Layer and P-InP protective layers.
4. DFB semiconductor laser according to claim 3, it is characterised in that the upper ducting layers of AlGaInAs with
AlGaInAs lower waveguide layers are the ducting layer of content gradually variational.
5. DFB semiconductor laser according to claim 3, it is characterised in that the ridge of the ridge waveguide laser
Waveguiding structure includes P-InGaAsP etch stop layers, P-InP space layers, P-InGaAsP transition zones and P+- InGaAs heavy doping
Ohmic contact layer.
6. DFB semiconductor laser according to claim 5, it is characterised in that the ridge of ridge waveguide structure is deep 1.8 μm,
Wide ridge is respectively 2.0 μm and 1.8 μm up and down.
7. DFB semiconductor laser according to claim 1, it is characterised in that the grating is periodicity uniform grating.
8. DFB semiconductor laser according to claim 1, it is characterised in that the grating surface is covered with BCB.
9. DFB semiconductor laser according to claim 1, it is characterised in that also including positioned at ridge waveguide laser
Ridge waveguide surface laser metal-coated region and the metal detector overlay area positioned at detector surface.
10. DFB semiconductor laser according to claim 1, it is characterised in that light output end evaporation has a pair of Si/
Al2O3High transmittance film；The evaporation of backlight end face has two couples of Al2O3/ Si high-reflecting films.
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| CN201720051403.8U CN206412633U (en) | 2017-01-17 | 2017-01-17 | A kind of DFB semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720051403.8U CN206412633U (en) | 2017-01-17 | 2017-01-17 | A kind of DFB semiconductor laser |
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