CN206385256U - Durable type silicon wafer bearing disk - Google Patents
Durable type silicon wafer bearing disk Download PDFInfo
- Publication number
- CN206385256U CN206385256U CN201621235037.3U CN201621235037U CN206385256U CN 206385256 U CN206385256 U CN 206385256U CN 201621235037 U CN201621235037 U CN 201621235037U CN 206385256 U CN206385256 U CN 206385256U
- Authority
- CN
- China
- Prior art keywords
- silicon
- disk
- disk body
- barrier layer
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 87
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 54
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000002210 silicon-based material Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 39
- 229910002804 graphite Inorganic materials 0.000 description 39
- 239000010439 graphite Substances 0.000 description 39
- 229910021529 ammonia Inorganic materials 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000407 epitaxy Methods 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000003754 machining Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 238000003763 carbonization Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011469 building brick Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 210000005069 ears Anatomy 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- -1 Gallium nitride (GaN) series compound Chemical class 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 206010020718 hyperplasia Diseases 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model discloses a kind of durable type silicon wafer bearing disk.Its technological means is a kind of durable type silicon wafer bearing disk, and it can accommodate an at least wafer body, and it includes disk body and barrier layer, and disk body is made up of polycrystalline silicon material, and disk body surface, which is arranged with least one, can correspond to the circular groove for accommodating wafer body；Barrier layer is made up of the silicon nitride material that growth is reacted by tropical resources method, barrier layer is coated on disk body surface, MOCVD process gas and/or depositing metal atoms can be stopped, spread and acted on the silicon in disk body toward disk body interior, silicon that simultaneously can also be in barrier disc body spreads toward outside, and is acted on MOCVD process gas and/or depositing metal atoms.
Description
Technical field
The utility model is related to a kind of applied to Metalorganic chemical vapor deposition (Metal Organic Chemical
Vapor Deposition, abbreviation MOCVD) epitaxy stove silicon wafer bearing disk (susceptor, wafer carrier or
Substrate holder), espespecially a kind of durable type silicon wafer bearing disk.
Background technology
Gallium nitride (GaN) series compound semi-conducting material, has been successfully applied to light emitting diode in recent years
(Light Emitting Diode, abbreviation LED) is illuminated, and will be turned into a new generation's 5G mobile communcations systems, indispensable
High frequency and HIGH-POWERED MICROWAVES electronic building brick, following gallium nitride (GaN) if electronic building brick can be widely used on power conversion apparatus,
It can also reduce electric energy consume in each power transformation link, can be rated as most potential third generation semi-conducting material, and commodity at present
Gallium nitride (GaN) based semiconductor photoelectric subassembly of change, is all with MOCVD epitaxy fabrication techniques mostly.
The yield of LED chip, is to be determined by the uniformity of its emission wavelength, MOCVD epitaxies stove is for accuracy controlling LED
Epitaxy justifies the uniformity of emission wavelength, and its silicon wafer bearing disk need to coordinate heater there is provided an optimization wafer uniformity temperature, with heavy
The high-quality epitaxial layer of product, therefore during silicon wafer bearing disk is MOCVD epitaxy stoves, a very important component, while being also that LED is built
One of main consumptive material of brilliant factory.
As depicted in figs. 1 and 2, traditional silicon wafer bearing disk A either one chips or be multiple-piece form, both
Carrier body 10, it will usually made using graphite material, and the pocket (Pocket) 30 of respective amount be set, to carry
Wafer 40, and on the surface of entirety, CVD can be recycled, carborundum (SiC) coating 20 of about 70 to 120 μm of a layer thickness is plated,
Refer to Fig. 3.
Although the carbonization silicon cladding 20 that CVD plates out, its strength of materials is very high, thickness also only only have 70 to
120 μm, and carrier body 10, as made by graphite substrate 101, its intensity is but very low, such combined material, impact resistance
Ability is bad；Carrier in use, can may be from handling process regularly by external force collision, on
Blanking or artificial accident collision, but topmost shock factor, also come from the collision of wafer 40, moreover current LED epitaxial growth
Wafer 40, be sapphire wafer (SapphireAl2O3Wafer), it is very rigid；The problem of shock, especially it is common in high rotating speed
Among the MOCVD epitaxy stoves of type, the rotating speed of its silicon wafer bearing disk is up to per minute 1000 turns, mistake of the board in start and stop
Cheng Dangzhong, due to the effect of inertia force, hard sapphire wafer, often by whipping, hits the pocket of silicon wafer bearing disk
(Pocket) 30 side wall 301 or edge 302, causes carbonization silicon cladding 20 some micro-cracks 201 or unfilled corner 202 occur, please join
Fig. 3 and Fig. 4 are read, more seriously, the large-scale epitaxy stove of a new generation, the external diameter about 700mm of its silicon wafer bearing disk, powerful centrifugation
Power so that the impact of sapphire wafer is bigger, and destructive power is stronger.
Study for a long period of time the carborundum coated graphite carrier scrapped, and its damage mechanism is found, as shown in figure 5, being hit from external force
Hit a and micro-crack or unfilled corner b occur to silicon carbide film, the reaction gas passage c of vapor phase etchant graphite substrate is subsequently formed, in high temperature
Lower processing procedure ammonia, which is decomposed, produces a large amount of atom state hydrogen d, and hydrogen etches graphite reaction generation hydrocarbon gas e strongly, finally leads
Graphite substrate h is eaten in cause hollow.
After external force collision carbonization silicon cladding 20, the micro-crack 201 or unfilled corner 202 accordingly produced, in the circulation of MOCVD processing procedures
Under thermal stress is helped, the breach 203 that can be developed into quickly on a carbonization silicon cladding 20, and then as vapor phase etchant graphite substrate
101 reaction gas passage, and producing comprising eating the typical channel of area 204 and porous graphite 205 hollow, its typical channel is cutd open
Face schematic diagram is as shown in Figure 6.
Ammonia (NH in gallium nitride semiconductor MOCVD epitaxial growth process3), the atom state hydrogen (H) produced through pyrolytic is right
The carbon of graphite-phase, there is strong reaction, as the hydrocarbon gas (CH of reaction generationX) largely disengaged by breach 203,
In the atmosphere for being mixed into gas phase epitaxy, emission wavelength and the brightness of grown LED chip can be influenceed, now need to consider to eliminate and change renewal
Silicon wafer bearing disk, too early carrier is damaged, and often leads to the too high consumptive material expense of LED epitaxial growth factory.
The shortcoming of Conventional silicon carbide coated graphite carrier, can conclude some as follows：
First point：Not impact resistance, service life is short.
Second point：Graphite can disturb epitaxial growth process by ammonia Eroded.
Thirdly：Graphite intensity difference, machining deformation amount is big so that on multiple-piece carrier, each pocket card profile chi
Very little tolerance is larger, influences integral LED chip process rate.
4th point：The film thickness distribution of large area CVD silicon carbide plated film, has in certain variation, and CVD silicon carbide plated film
Often there is the salient point (Asperities) of abnormal growth, cause the tolerance of carrier pocket card profile and surface flatness compared with
Greatly, the process rate of integral LED chip is influenceed.
5th point：Graphite is the bulk of powder compacting, the carrier being processed into, its density, pyroconductivity, thermal expansion system
The uniformity of the material characters such as number is poor, influences the temperature homogeneity and uniformity of carrier.
On the other hand, Recent study finds the uniformity of LED wafer temperature, can influence the uniformity of epitaxial layer composition,
Especially during InGaN (InGaN) quantum well (Quantum Wells) is made, indium composition is distributed for temperature very
Sensitivity, small temperature difference, finally to the uniformity of LED chip wavelength, having obviously influences, therefore, carrier
Pocket card profile, in addition to being typically processed into plane as shown in Figure 3, in order to compensate in epitaxial growth process, because of silicon wafer warpage
The non-uniform temperature of generation, just accordingly develops this change for being processed into concave surface as shown in Figure 4.
About tens microns of the depth of concave surface, and the machining deformation amount of graphite or the thickness variation of CVD silicon carbide, equally
It is also this order of magnitude so that the uniformity of Conventional silicon carbide coated graphite carrier upper pocket card profile is bad, it is difficult to lifted
The production yield of LED chip.
Although illuminating LED chip market still Sustainable Growth, illuminating product price competition is fierce, annual drop range is up to
30 to 40%, manufacturer is difficult to make a profit, in order to reach the target of LED chip low priceization, the MOCVD epitaxial growth process skills of developing low-cost
Art, will turn into the successful key factor of Mirae Corp., however, at present in MOCVD epitaxial growth process, moreover it is possible to quickly and efficiently reduce
The part of cost, also only this part of silicon wafer bearing disk.
In view of this, how providing one kind can be applied in MOCVD epitaxial growth process, consumables cost is low, process rate is high,
The durable type silicon wafer bearing disk of service life length, becomes and is intended to improved purpose for the utility model.
Utility model content
The utility model purpose is to provide a kind of durable type silicon wafer bearing disk, its service life length, impact resistance, intensity
High, nonexpendable item, nothing is etched problem.
To solve the above problems and reaching the purpose of this utility model, technological means of the present utility model is realized in
, a kind of durable type silicon wafer bearing disk, the durable type silicon wafer bearing disk can accommodate an at least wafer body, and it includes a disk sheet
Body and a barrier layer, the disk body, it is made up of polycrystalline silicon material, and the disk body surface is arranged with least one can be right
The circular groove of the wafer body should be accommodated；The barrier layer, it by tropical resources method by reacting the silicon nitride material grown
Constituted, the barrier layer is coated on the disk body surface, can stop MOCVD process gas and/or depositing metal atoms,
Spread and acted on the silicon in the disk body toward the disk body interior, while can also stop silicon in the disk body outward
Portion spreads, and is acted on MOCVD process gas and/or depositing metal atoms.
More particularly, the barrier layer, its thickness range is 1nm to 100nm.
More particularly, the disk body, the silicone content of its polycrystalline silicon material, higher than 98%.
More particularly, the barrier layer, its silicon nitride material is by tropical resources method, in 1000 DEG C to 1300 DEG C temperature
Under, using ammonia or nitrogen one of both, reacted and generated.
Understood according to above-mentioned, the beneficial effects of the utility model are：
First point：In the utility model, disk body is made up of polycrystalline silicon material through being integrally machined, polycrystalline silicon material
Mechanical performance, far superior to graphite mechanical performance, therefore the utility model durable type silicon wafer bearing disk not only can crashworthiness
Hit, be also less prone to damage.
Second point：In the utility model, the disk body that polycrystalline silicon material is constituted, even if occurring crack on barrier layer,
Will not be by ammonia (NH3) corroded, therefore the utility model durable type silicon wafer bearing disk can be long-term used in gallium nitride semiconductor
Under the hot environment of MOCVD epitaxial growth process, service life is indefinitely, it is not necessary to change often, effectively reduces consumables cost.
Thirdly：In the utility model, the barrier layer that silicon nitride material is constituted, in gallium nitride semiconductor MOCVD epitaxies
Under the atmosphere of processing procedure, the ability for having self-healing to regenerate can increase the service life, allow the utility model durable type silicon wafer bearing disk energy
It is used for a long time, even if barrier layer suffers from external force collision, therefore produces rupture or unfilled corner, influenceed by its self-healing ability, still
It is old to be continuing with.
4th point：The strength of materials of polycrystalline silicon material is much larger than graphite, and the machining deformation amount of polysilicon is few, can produce
The process rate of the high silicon wafer bearing disk of appearance and size uniformity, further lifting integral LED chip.
5th point：Grown using tropical resources method, the barrier layer formed by silicon nitride material, the spy with self limiting growth
Property, therefore easily a uniform film thickness and thin silicon nitride layer are obtained, so not interfering with carrier when Nitridation of Large is handled
Appearance and size precision.
6th point：The purity of polycrystalline silicon material is high, and the uniformity of material is good, and thermal conductivity ratio graphite is high, thermal coefficient of expansion
Carrier lower than graphite, being made using polysilicon, dimensional stability at high temperature is high, there is more excellent temperature homogeneity table
It is existing.
7th point：MOCVD epitaxial growth process for a long time, there are the problem of carbon background concn is too high, main pollution sources
One of, it is exactly carborundum coated graphite carrier, comparatively, the utility model durable type silicon wafer bearing disk is once coming into operation
Afterwards, the carbon background concn of MOCVD epitaxial growth process just can be greatly reduced, gallium nitride (GaN) based semiconductor is further lifted
The photoelectric characteristic of material, and accelerate exploitation gallium nitride (GaN) to be high frequency and great-power electronic component.
Brief description of the drawings
Fig. 1 is the schematic perspective view of conventional one-piece formula silicon wafer bearing disk；
Fig. 2 is the schematic perspective view of traditional multiple-piece silicon wafer bearing disk；
I-I diagrammatic cross-section when Fig. 3 is implemented for pockets in Fig. 2 with plane；
I-I diagrammatic cross-section when Fig. 4 is implemented for pockets in Fig. 2 with concave surface；
Fig. 5 is the damage schematic diagram of mechanism of traditional silicon wafer bearing disk；
Fig. 6 is the diagrammatic cross-section of typical channel；
Schematic perspective view when Fig. 7 applies for the monolithic that the utility model embodiment is provided；
Schematic perspective view when Fig. 8 applies for the multi-disc that the utility model embodiment is provided；
II-II diagrammatic cross-section when Fig. 9 is implemented for circular groove part in Fig. 8 with plane；
II-II diagrammatic cross-section when Figure 10 is implemented for circular groove part in Fig. 8 with concave surface.
Description of reference numerals：
1 disk body
11 circular grooves
1A polycrystalline silicon materials
2 barrier layers
2A silicon nitride materials
10 carrier bodies
101 graphite substrates
20 carbonization silicon claddings
201 micro-cracks
202 unfilled corners
203 breaches
204 eat area hollow
205 porous graphites
30 pockets
301 sides
302 edges
40 wafers
100 durable type silicon wafer bearing disks
200 wafer bodies
A tradition silicon wafer bearing disks
A external force collisions
There is micro-crack or unfilled corner in b silicon carbide films
The reaction gas passage of c formation vapor phase etchant graphite substrates
Processing procedure ammonia, which is decomposed, under d high temperature produces a large amount of atom state hydrogens
E hydrogen etches graphite reaction generation hydrocarbon gas strongly
H eats graphite substrate hollow
Embodiment
It is described in detail based on the following the embodiment shown in drawing：
As shown in Figure 7 to 10, a kind of durable type silicon wafer bearing disk, the durable type silicon wafer bearing disk are disclosed in figure
100 can accommodate an at least wafer body 200, and it includes a disk body 1 and a barrier layer 2, the disk body 1, and it is by polysilicon
Material 1A is constituted, and the surface of disk body 1, which is arranged with least one, can correspond to the circular groove for accommodating the wafer body 200
11；The barrier layer 2, it is made up of the silicon nitride material 2A that growth is reacted by tropical resources method, and the barrier layer 2 is coated on
On the surface of disk body 1, MOCVD process gas and/or depositing metal atoms can be stopped, toward the diffusion inside of disk body 1
And acted on the silicon in the disk body 1, while can also stop that silicon in the disk body 1 spreads toward outside, and with MOCVD systems
Journey gas and/or depositing metal atoms effect.
Wherein, the utility model durable type silicon wafer bearing disk 100, polycrystalline silicon material 1A disk body 1, mechanical performance is much
Better than graphite silicon wafer bearing disk, not only can impact resistance, be also less prone to damage, and silicon nitride material 2A barrier layer 2, even if splitting
Seam, disk body 1 will not also be corroded by ammonia, on the other hand, gas of the barrier layer 2 in gallium nitride semiconductor MOCVD epitaxial growth process
Under atmosphere, energy self-healing regeneration, and influenceed by silicon nitride material 2A characteristics, the problem of not having hyperplasia, both cooperations allow
The overall service life of the utility model durable type silicon wafer bearing disk 100 is extended, and can effectively reduce consumables cost.
Secondly, the manufacture of the utility model durable type silicon wafer bearing disk 100, be described as follows shown in, there is provided one first
By high-purity silicon material through melting, solidifying the polycrystal silicon ingot (Polysilicon ingot) of long crystalline substance；Cleaved again, grinding
And a disk body 1 is made after computer numerical control (CNC) instrument machining profile；Then tropical resources method (Thermal is recycled
Nitridation) go out one layer of barrier layer 2 being made up of silicon nitride material 2A in the superficial growth of disk body 1, this reality is finally made
With novel durable type silicon wafer bearing disk 100.
Traditional silicon wafer bearing disk, as shown in figure 1, made by graphite bulk, graphite bulk is manufactured by powder compacting
Form, typically contain hole, and the uniformity of material is poor, relatively the disk body 1 in the utility model is by melting, coagulated
Gu being come out manufactured by long crystalline substance process, there is no hole in material, and the uniformity of material is splendid；Solar-grade polysilicon can be directly
It is brilliant using freezing method length, square silicon heavy stone used as an anchor, such as 450kg square silicon heavy stone used as an anchor, size about 840x840x280mm, Ke Yiyong can be obtained
To manufacture external diameter about 700mm multiple-piece silicon wafer bearing disk, carrying such as 4 inch wafer X31 pieces or be 6 are can apply to
Inch wafer X12 pieces.
Polycrystalline silicon material 1A property, is similar to monocrystalline silicon, therefore the material for comparing silicon and graphite in following table [1] is special
Property：
Table [1] silicon is compared with the material property of graphite
Made in the density difference of silicon and graphite only about 20% or so, therefore the utility model using polycrystalline silicon material 1A
Disk body 1, the traditional silicon wafer bearing disk A weights that can't work as material with graphite than script are too many, it is possible to turn applied to height
Fast, large-scale epitaxy stove, is unlikely to increase too many system load.
The pyroconductivity of silicon better than high intensity, etc. isostactic pressing graphite, be conducive to needing accurate control temperature homogeneity
MOCVD epitaxy carriers.
The thermal coefficient of expansion of silicon less than high intensity, etc. isostactic pressing graphite, therefore polycrystalline silicon material 1A make disk sheet
Body 1, making the utility model durable type silicon wafer bearing disk 100, dimensional stability is improved at high temperature, and heat distortion amount is few, is suitable for
Make the silicon wafer bearing disk of major diameter.
In MOCVD epitaxy stoves, the maximum operating temperature of silicon wafer bearing disk is about at 1200 DEG C, and the highest of polysilicon works
Temperature works at high temperature up to 1350 DEG C, and for a long time, will not become cellular, will not also deform, no particle, not peel off,
MOCVD epitaxial growth process will not be polluted.
Polycrystalline silicon material 1A cutting, grinding, can use conventional abrasives, such as aluminum oxide, carborundum, it is possible to use
Diamond abrasive material improves material remove rate, reduction cutting and attrition process cost.
Profile and pocket card profile as silicon wafer bearing disk, that is, circular groove 11 processing, using CNC
Toolroom machine coordinates diamond cutter to carry out Precision Machining, strictly controls dimensional accuracy, and the dimensional tolerance range of circular groove 11 can be with
Less than ± 10 μm.
Polycrystalline silicon material 1A property, is similar to monocrystalline silicon, therefore compare the mechanicalness of silicon and graphite in following table [2]
Matter：
Table [2] silicon is compared with the engineering properties of graphite
Young's modulus (Young's modulus) very little of graphite, the machining deformation amount of material is big, it is difficult to which control machinery adds
The dimensional accuracy of work, therefore the margin of tolerance of the silicon wafer bearing disk appearance and size of graphite is big, uniformity is poor.
The young's modulus of silicon is more much larger than high strength graphite, and the machining deformation amount of material is small, the dimensional accuracy of machining
Height, can produce the high silicon wafer bearing disk of appearance and size uniformity.
Bending strength (Flexural Strength), fracture toughness (Fracture toughness) and the hardness of silicon,
It is all more much larger than high strength graphite, therefore the disk body 1 that polycrystalline silicon material 1A makes, make the utility model durable type wafer carrying
The impact resistance ability of disk 100, exceeds well over the silicon wafer bearing disk of graphite.
Under high temperature, graphite can be by ammonia (NH3) strong erosion, therefore tradition silicon wafer bearing disk A surfaces, it is necessary to utilize CVD
Method is plated after one layer of carborundum (SiC) coating, could be used for gallium nitride (GaN) based semiconductor MOCVD epitaxial growth process；On the contrary, should
, will not be by ammonia (NH with the utility model durable type silicon wafer bearing disk 100 of polysilicon3) corrode, on the contrary can be with ammonia (NH3)
Reaction generation silicon nitride (Si3N4)。
In above-mentioned, the barrier layer 2, its thickness range is 1nm to 100nm.Wherein, preferably thickness range be 5nm extremely
60nm。
In above-mentioned, the disk body 1, its polycrystalline silicon material 1A silicone content, higher than 98%.
Wherein, polycrystalline silicon material 1A source, can be divided into solar-grade polysilicon (purity 99.9999% or more) and electricity
Sub- level polysilicon (purity 99.999999999% or more), the elemental silicon of melting, when being solidified under the conditions of supercooling, silicon atom meeting
With diamond lattice morphologic arrangement into many nucleus, such as these nucleus grow up to the different crystal grain of high preferred orientation, then these crystal grain knots
Altogether, polysilicon is just crystallized into；And the preferably application selection of the utility model durable type silicon wafer bearing disk 100, it is solar energy
Level polysilicon.
In above-mentioned, the barrier layer 2, its silicon nitride material 2A is by tropical resources method, in 1000 DEG C to 1300 DEG C temperature
Under, using ammonia or nitrogen one of both, reacted and generated.
Silicon and nitrogen, can generate silicon nitride according to following chemical equation at high temperature：
3Si(s)+2N2(g)→Si3N4(s)；
The tropical resources method that the utility model is used, is, using this reaction, to allow polycrystalline silicon material 1A disk body 1,
Under 1000 DEG C to 1300 DEG C of temperature, with ammonia (NH3) or nitrogen (N2) atmosphere reaction, generation is one by silicon nitride material 2A
The barrier layer 2 formed, integral coating is on the surface of disk body 1.
The advantage of the tropical resources method of use, it is as follows：
First, usual cvd nitride silicon thin film must use chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition
Etc. (PACVD) expensive manufacture of semiconductor method, is reacted using the Direct-Nitridation of tropical resources method, cost can be reduced, by many
On the disk body 1 that crystal silicon material 1A is constituted, high density of texture is grown, barriering effect is good, be made up of silicon nitride material 2A
Barrier layer 2.
2nd, the silicon nitride layer grown using tropical resources method, because its density of texture is high, the effect of barrier atoms diffusion is good, tool
There is the characteristic of self limiting growth, therefore be easy in Nitridation of Large, obtain a uniform film thickness, thin silicon nitride layer, no
The appearance and size precision of carrier can be influenceed.
On the other hand, the utility model uses tropical resources method, and silicon nitride (Si is prepared on the disk body 1 of polysilicon3N4)
Barrier layer 2, its main function is as follows：
First, the surface of disk body 1 of stable polysilicon is passivated, in gallium nitride (GaN) based semiconductor MOCVD epitaxial growth process,
Silicon is except meeting and processing procedure ammonia (NH3) reaction is outer, can also with other organic metal gas, for example：Trimethyl gallium
(Trimethylgallium), trimethyl aluminium (Trimethylaluminum) etc.；The metals such as the gallium (Ga) or aluminium (Al) that are deposited
Produce metallurgy action；High density silicon nitride (the Si grown by tropical resources method3N4), the barrier layer 2 formed can stop system
The depositing metal atoms such as journey gas or gallium (Ga), aluminium (Al) spread inside, are acted on the silicon of disk body 1；Also can barrier disc body 1
Silicon toward the depositing metal atoms such as the gas in external diffusion, with MOCVD epitaxial growth process or gallium (Ga), aluminium (Al) act on.
2nd, surface emissivity (the emissivity of of stable the utility model durable type silicon wafer bearing disk 100
Surface), the temperature control of MOCVD epitaxy furnace systems is conducive to.
The barrier layer 2 being made up of silicon nitride material 2A, in gallium nitride (GaN) based semiconductor MOCVD epitaxial growth process atmosphere
Under, there is the ability that self-healing regenerates, barrier layer 2 is during the utility model use, even if being produced by external force collision
Rupture or unfilled corner, so cause disk body 1 polysilicon surface be exposed to it is outer, but in this more than 1000 DEG C of MOCVD epitaxial growth process
Temperature environment under, the silicon of disk body 1, can and a large amount of ammonia (NH in MOCVD epitaxial growth process3), automatic reaction grows nitrogen
SiClx (Si3N4), that is to say, that barrier layer 2 rupture or unfilled corner position, during epitaxy, can because disk body 1 silicon
With processing procedure ammonia (NH3) reaction, regenerate silicon nitride (Si3N4), barrier layer 2 is automatically healed.
Embodiment 1：For making the polycrystalline silicon material 1A of disk body 1, using solar-grade polysilicon, purity exists
More than 99.9999%；After machined, disk body 1 is obtained, then disk body 1 is inserted in vacuum furnace again, carry out heat
Nitridation reaction, is heated to 1100 DEG C, is passed through ammonia (NH3), reaction pressure maintains 400 support ears (torr), nitridation reaction time
For 4 hours, the barrier layer 2 of the superficial growth of disk body 1, thickness can be of about 5nm.
Embodiment 2：After mode same as Example 1, the disk body 1 for producing polysilicon, disk body 1 is inserted into vacuum
In heating furnace, tropical resources reaction is carried out, 1200 DEG C is heated to, is passed through nitrogen (N2) and 5% hydrogen (H2) forming gas, reaction
Pressure maintains 150 support ears (torr), and the nitridation reaction time is 4 hours, and the barrier layer 2 of the superficial growth of disk body 1, thickness can reach
About 60nm.
Construction of the present utility model, feature and action effect is described in detail according to diagrammatically shown embodiment above, with
Upper described is only preferred embodiment of the present utility model, but the utility model is not to limit practical range shown in drawing, it is every according to
According to the made change of conception of the present utility model, or the equivalent embodiment of equivalent variations is revised as, still without departing from specification and figure
, all should be in protection domain of the present utility model when showing covered spirit.
Claims (2)
1. a kind of durable type silicon wafer bearing disk, the durable type silicon wafer bearing disk (100) can accommodate an at least wafer body (200),
It includes a disk body (1) and a barrier layer (2), it is characterised in that：
The disk body (1), it is made up of polycrystalline silicon material (1A), and disk body (1) surface is arranged with least one can be right
The circular groove (11) of the wafer body (200) should be accommodated；
The barrier layer (2), it is made up of the silicon nitride material (2A) that growth is reacted by tropical resources method, the barrier layer
(2) it is coated on disk body (1) surface, MOCVD process gas and/or depositing metal atoms can be stopped, toward the disk sheet
Body (1) diffusion inside and acted on the silicon in the disk body (1), while can also stop silicon in the disk body (1) outward
Portion spreads, and is acted on MOCVD process gas and/or depositing metal atoms.
2. durable type silicon wafer bearing disk according to claim 1, it is characterised in that the barrier layer (2), its thickness range
For 1nm to 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621235037.3U CN206385256U (en) | 2016-11-17 | 2016-11-17 | Durable type silicon wafer bearing disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621235037.3U CN206385256U (en) | 2016-11-17 | 2016-11-17 | Durable type silicon wafer bearing disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206385256U true CN206385256U (en) | 2017-08-08 |
Family
ID=59486853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621235037.3U Expired - Fee Related CN206385256U (en) | 2016-11-17 | 2016-11-17 | Durable type silicon wafer bearing disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206385256U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109183001A (en) * | 2018-11-27 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to epitaxial growth of semiconductor material growth |
| CN109841556A (en) * | 2017-11-28 | 2019-06-04 | 桦榆国际有限公司 | Silicon wafer bearing disk method for maintaining |
| CN113201728A (en) * | 2021-04-28 | 2021-08-03 | 錼创显示科技股份有限公司 | Semiconductor wafer bearing structure and metal organic chemical vapor deposition device |
-
2016
- 2016-11-17 CN CN201621235037.3U patent/CN206385256U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841556A (en) * | 2017-11-28 | 2019-06-04 | 桦榆国际有限公司 | Silicon wafer bearing disk method for maintaining |
| CN109841556B (en) * | 2017-11-28 | 2020-11-03 | 桦榆国际有限公司 | Method for maintaining wafer bearing plate |
| CN109183001A (en) * | 2018-11-27 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to epitaxial growth of semiconductor material growth |
| CN113201728A (en) * | 2021-04-28 | 2021-08-03 | 錼创显示科技股份有限公司 | Semiconductor wafer bearing structure and metal organic chemical vapor deposition device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11685660B2 (en) | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide | |
| TWI770769B (en) | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide | |
| US7163393B2 (en) | Heat treatment jig for semiconductor silicon substrate | |
| CN206385256U (en) | Durable type silicon wafer bearing disk | |
| EP2738140B1 (en) | Polycrystalline diamond, manufacturing method therefor, scribe tool, scribe wheel, dresser, rotary tool, water-jet orifice, wire drawing die, cutting tool, and electron source | |
| US20070158654A1 (en) | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application | |
| JP5569112B2 (en) | Method for manufacturing silicon carbide single crystal wafer and silicon carbide single crystal wafer obtained by this method | |
| JP2013028500A (en) | Polycrystalline diamond and method for producing the same, scribe tool, scribe wheel, dresser, rotating tool, orifice for waterjet, wire drawing die and cutting tool | |
| CN110890309B (en) | Graphite disc repairing method | |
| CN105393336A (en) | Composite substrate, method for fabricating same, function element, and seed crystal substrate | |
| TWM541639U (en) | Improved wafer carrier | |
| CN105658847B (en) | The manufacturing method of epi-taxial silicon carbide silicon wafer | |
| JP7081453B2 (en) | Graphite substrate, silicon carbide film formation method and silicon carbide substrate manufacturing method | |
| CN112410762B (en) | Silicon-based tray for MOCVD equipment and preparation method | |
| EP0581438B1 (en) | Etching a diamond body with a molten or partially molten metal | |
| KR101139910B1 (en) | Silicon carbide complex and manufacturing method thereof | |
| JP4619036B2 (en) | Carbon composite material | |
| CN108447772A (en) | A kind of manufacturing method of COOLMOS silicon epitaxial wafers | |
| JP2014009144A (en) | Polycrystalline diamond composite and method for producing the same | |
| JP2013249212A (en) | Method of manufacturing diamond film and composite substrate used for the same | |
| TWM566720U (en) | Improved graphite susceptor surface layer structure | |
| CN208608179U (en) | Modified form graphite plate surface structure | |
| TW201521133A (en) | Reclaiming wafer susceptor and method for repairing the same | |
| JP4274833B2 (en) | Polycrystalline silicon casting material | |
| CN216793619U (en) | Novel pretreatment equipment for silicon carbide substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170808 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |