CN206353538U - A kind of high-photoelectric transformation efficiency solar cell - Google Patents
A kind of high-photoelectric transformation efficiency solar cell Download PDFInfo
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- CN206353538U CN206353538U CN201720050335.3U CN201720050335U CN206353538U CN 206353538 U CN206353538 U CN 206353538U CN 201720050335 U CN201720050335 U CN 201720050335U CN 206353538 U CN206353538 U CN 206353538U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of high-photoelectric transformation efficiency solar cell, including：One p-type dope semiconductor substrates, substrate has first surface and the second surface relative with the first surface；One back electrode, is arranged at first surface, and with the first surface Ohmic contact；One first convex tapered structure, the first convex tapered structure is formed by graphical treatment in second surface；One n type diffused layer, is formed by phosphorus diffusion；One transparent gate electrode, is made up of conductive transparent material, is arranged above n type diffused layer, and with n type diffused layer Ohmic contact；One transparent anti-reflection layer, is made of clear material；Positive electrode window region is etched with the transparent anti-reflection layer, the positive electrode window region bottom is connected with transparent gate electrode upper epidermis, and the positive electrode window region is provided with the positive electrode with transparent gate electrode Ohmic contact.It is roughened structure by improving substrate surface, and micro-nano concentrator lens structure is etched into transparent anti-reflection layer, greatly improves photoelectric transformation efficiency.
Description
Technical field
The utility model is related to a kind of solar cell, more particularly to a kind of high-photoelectric transformation efficiency solar cell.
Background technology
Following becoming increasingly conspicuous with problem of energy crisis, the mankind by the new energy of development and utilization such as solar energy etc,
Solar energy is a kind of inexhaustible, nexhaustible regenerative resource.In recent years, with the development of heliotechnics, government
Support on policy, solar energy turns into a kind of new cleaning fuel, has obtained extensive popularization.
But, how to improve the photoelectric transformation efficiency of solar cell, it has also become the technical bottleneck that industry is commonly encountered, industry
Interior many research staff pay many effort for it.
In the prior art, because the surface for being formed at doped silicon layer is a smooth planar structure, its surface area is smaller, because
This, make solar cell takes light area smaller.In addition, during surface of the sunray from external incident to doped silicon layer, irradiation
A light part to doped silicon layer is absorbed, and a part is reflected, and reflected light line can not be recycled, therefore solar energy
The utilization rate of cell against light is relatively low.
Chinese patent literature CN 103094374 discloses a kind of solar cell, including：One silicon chip substrate, the silicon chip
Substrate has a first surface and the second surface being oppositely arranged with the first surface；
Multiple 3-D nano, structures are formed at the second surface of the silicon chip substrate, and each three-dimensional in the form of an array
Nanostructured includes one first fin and one second fin, and first fin is extend side by side with the second fin, and adjacent first
Have between fin and the second fin between one first groove, adjacent 3-D nano, structure and form the second groove, described first
The depth of groove is less than the depth of the second groove；
One back electrode, the back electrode is arranged at the first surface of the silicon chip substrate, and is connect with first surface ohm
Touch；
One doped silicon layer, the doped silicon layer is arranged at the surface of the 3-D nano, structure；And
One Top electrode, the Top electrode is arranged at least part surface of the doped silicon layer.
Although the 3-D nano, structure of setting adds the surface area of silicon chip substrate, but structure is extremely complex, formation
Technique is also extremely complex, and cost is higher.
In addition, doped silicon layer is arranged at the surface of the 3-D nano, structure, understand that doped silicon layer must by its accompanying drawing
3-D nano, structure, can be only achieved be irradiated to doped silicon layer light largely absorbed.Therefore making doped silicon layer is also
It is extremely complex.
Utility model content
For the technical problem of above-mentioned prior art presence, the utility model purpose is：There is provided a kind of high opto-electronic conversion
Efficiency solar cell, is carved by improving p-type dope semiconductor substrates piece surface coarsening structure, and in transparent anti-reflection layer surface
Erosion forms micro-nano concentrator lens structure, can greatly improve solar energy photoelectric conversion efficiency, be a kind of high performance energy-conserving and environment-protective
Product.
The technical solution of the utility model is：
A kind of high-photoelectric transformation efficiency solar cell, including：
One p-type dope semiconductor substrates, the p-type dope semiconductor substrates have a first surface and with first table
The relative second surface in face；
One back electrode, the back electrode is arranged at first surface, and with the first surface Ohmic contact；
One first convex tapered structure, the first convex tapered structure is formed by graphical treatment in the second surface；
One n type diffused layer, the n type diffused layer is formed by phosphorus diffusion；
One transparent gate electrode, the transparent gate electrode is made up of conductive transparent material, is arranged above n type diffused layer, and
With n type diffused layer Ohmic contact；
One transparent anti-reflection layer, is made of clear material；Be etched with positive electrode window region on the transparent anti-reflection layer, it is described just
Electrode window mouth region bottom is connected with transparent gate electrode upper epidermis, and the positive electrode window region is provided with positive electrode, the positive electrode
With transparent gate electrode Ohmic contact.
It is preferred that, the first convex tapered structure includes equally distributed multiple convex cones, the convex cone bottom surface a width of 2~3
Micron, is highly 1~2 micron, and the spacing of convex cone and convex cone is 0.2~0.5 micron.
It is preferred that, the transparent gate electrode is one or more synthesis of indium tin oxide, fluorine tin-oxide or graphene
Material, thickness is 120~240 nanometers.
It is preferred that, the material of the transparent anti-reflection layer is silicon nitride, silica or alundum (Al2O3), and thickness is 15~20
Micron.
It is preferred that, the transparent anti-reflection layer upper surface is etched with micro-nano collector lens, and the micro-nano collector lens is second
Convex tapered structure, the second convex tapered structure include equally distributed multiple convex cones, a width of 2~3 microns of the convex cone bottom surface,
It highly it is 1~2 micron, the spacing of convex cone and convex cone is 0.2~0.5 micron.
It is preferred that, the upper surface of the convex cone of the micro-nano collector lens is an approximate sphere, the arc of the myopic spherical
Spend for 2.5~3.5rad.
It is preferred that, the p-type dope semiconductor substrates are monocrystalline silicon, polysilicon, non-crystalline silicon, GaAs, aluminium indium phosphorus, vulcanization
One kind in cadmium or cadmium antimonide material.
Compared with prior art, the utility model has the advantages that：
1, by improving p-type dope semiconductor substrates piece surface coarsening structure, using a graphical treatment, to substrate slice
Front carries out more regular patterned surface roughening, forms convex tapered structure, and technique is simple, cell piece can be caused more efficient
The incident light total reflection of reduction, so as to improve light quantum absorption efficiency.
2, by changing gate material, conductive silver paste opaque in traditional handicraft is replaced with transparent conductive material,
Because transparent conductive material has translucency, it can increased the light absorbing effective area in cell piece front, so that preferably
Improve the effective area that luminous energy is converted into electric energy.
3, photoelectric transformation efficiency is improved by improving transparent anti-reflection Rotating fields, using secondary graphical treatment, is etched
Graphical micro-nano collector lens, changes the optical texture of conventional transparent anti-reflection layer, patterning micro-nano collector lens can be played
Optically focused is acted on, and more luminous energy is received, so as to improve photoelectric transformation efficiency.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：
Fig. 1 is the structural representation of the utility model high-photoelectric transformation efficiency solar cell；
Fig. 2 is the distribution schematic diagram of convex tapered structure；
Fig. 3 is the flow chart of the preparation method of the utility model high-photoelectric transformation efficiency solar cell.
Embodiment
To make the purpose of this utility model, technical scheme and advantage of greater clarity, with reference to embodiment
And referring to the drawings, the utility model is further described.It should be understood that these descriptions are merely illustrative, and do not really want
Limit scope of the present utility model.In addition, in the following description, the description to known features and technology is eliminated, to avoid not
Necessarily obscure concept of the present utility model.
Embodiment：
As shown in figure 1, the utility model high-photoelectric transformation efficiency solar cell, including：
P-type dope semiconductor substrates 1, p-type dope semiconductor substrates have a first surface and with the first surface phase
To a second surface；P-type dope semiconductor substrates be monocrystalline silicon, polysilicon, non-crystalline silicon, GaAs, aluminium indium phosphorus, cadmium sulfide or
One kind in the materials such as cadmium antimonide.
The first surface of p-type dope semiconductor substrates 1 is provided with back electrode 2, and with the first surface Ohmic contact；
The first convex tapered structure 11 is formed with the second surface of p-type dope semiconductor substrates 1, as shown in Fig. 2 first is convex
Tapered structure 11 is formed by graphical treatment, and the first convex tapered structure 11 includes equally distributed multiple convex cones 111, described convex
A width of 2~3 microns of 111 bottom surfaces are bored, are highly 1~2 micron, the spacing of convex cone 111 and convex cone 111 is 0.2~0.5 micron.
Phosphorus diffusion is carried out on the first convex surface of tapered structure 11, forms certain thickness in p-type dope semiconductor substrates 1
N type diffused layer 3, thickness of diffusion layer is 0.3~0.5 micron, and the region that such p-type dope semiconductor substrates 1 do not spread is p-type
Conductance layer 12, p-type conductance layer 12 and the formation PN junction of n type diffused layer 3.
Transparent gate electrode 4 and transparent anti-reflection layer 5 are prepared in the upper surface of n type diffused layer 3, wherein the thickness of transparent gate electrode 4
Spend for 120~240 nanometers, the thickness of transparent anti-reflection layer 5 is 15~20 microns.Transparent gate electrode 4 is indium tin oxide, fluorine tin oxygen
One or more synthetic materials of the conductive transparent material such as compound or graphene, the transparent gate electrode 4 and the Europe of n type diffused layer 3
Nurse is contacted.The material of transparent anti-reflection layer 5 is the transparent materials such as silicon nitride, silica or alundum (Al2O3).
Transparent gate electrode silver-colored gate electrode positive compared to tradition, due to that with translucency, can make cell piece front is light absorbing to have
Effect area increased, so as to preferably improve the effective area that luminous energy is converted into electric energy；On the one hand transparent anti-reflection layer plays electricity
The passivation on pond piece surface, improves the reliability of battery, on the other hand plays a part of incident light anti-reflection.
The transparent upper surface of anti-reflection layer 5 is etched with micro-nano collector lens 51, and micro-nano collector lens 51 is the second convex tapered structure,
Second convex tapered structure includes equally distributed multiple convex cones, and a width of 2~3 microns of convex cone bottom surface is highly 1~2 micron, convex cone
Spacing with convex cone is 0.2~0.5 micron.The upper surface of the convex cone of micro-nano collector lens 51 is an approximate sphere, near-sighted ball
The radian in face is 2.5~3.5rad.
Micro-nano collector lens can play optically focused effect, receive more luminous energy, further improve photoelectric transformation efficiency.
Positive electrode window region, positive electrode window region bottom and the transparent upper table of gate electrode 4 are etched with the transparent two ends of anti-reflection layer 5
Layer connection, positive electrode window region is provided with positive electrode 6, the positive electrode 6 and the transparent Ohmic contact of gate electrode 4.
As shown in figure 3, the preparation method of the solar cell comprises the following steps：
（1）The Semiconductor substrate piece adulterated from p-type as solar cell substrate, Semiconductor substrate piece be monocrystalline silicon,
One kind in the materials such as polysilicon, non-crystalline silicon, GaAs, aluminium indium phosphorus, cadmium sulfide, cadmium antimonide.
（2）The Semiconductor substrate piece that p-type is adulterated once is schemed with semiconductor technologies such as photoetching, dry or wet etch
Shapeization processing, forms convex tapered structure, and convex tapered structure includes equally distributed multiple convex cones, and convex cone bottom surface a width of 2~3 is micro-
Rice, is highly 1~2 micron, and the spacing of convex cone and convex cone is 0.2~0.5 micron.
The preparation process of convex tapered structure is：--- --- --- ----post bake --- etching --- is gone front baking whirl coating for development for exposure
Glue --- cleaning, the wherein technological parameter of etch step can be any of following：
1st, wet etching silica, silicon nitride, the mixed liquor configured with hydrofluoric acid, ammonium fluoride and deionized water, proportioning
Hydrofluoric acid：Ammonium fluoride：Deionized water=3ml:6g:9ml, bath temperature is controlled at 30-40 degrees Celsius, and etch period is in 50-70
Second.
2nd, RIE dry etchings silica, silicon nitride, reaction source CHF3, SF6, He, O2, Power Control is in 300-
400W, used time 1-4 minute.
3rd, wet etching alundum (Al2O3), the mixed liquor configured with sulfuric acid, phosphoric acid, matches sulfuric acid：Phosphoric acid=3ml:1ml, is carved
Temperature is lost in 270-500 DEG C, etch period 10-20 minutes.
4th, ICP dry etchings alundum (Al2O3), reaction source gas：Cl2, BCl3, etching radio-frequency power control is in 700-
1500W, substrate bias power is in 250-450W, etch period 1-3 minutes.
5th, wet etching silicon, the mixed liquor matched somebody with somebody with hydrofluoric acid, nitric acid, deionized water matches hydrofluoric acid：Nitric acid：Deionization
Water=6ml:100ml:40ml, 40-80 DEG C of temperature, etch period 1-3 minutes.
6th, IBE dry etchings silicon, the inert gas such as reaction source Ar, Kr, Xe, ion energy is in 300-350ev, used time 60-
90 minutes.Advantage high resolution, can be accurate to 10 nanometers.
（3）Phosphorus diffusion is carried out to p-type dope semiconductor substrates piece front with diffusion technique, certain thickness N-type is formed and expands
Layer is dissipated, so as to form PN junction, thickness of diffusion layer is 0.3~0.5 micron.
（4）Use physical vapour deposition (PVD)（PVD）Method transparent gate electrode, transparent gate electrode are made above n type diffused layer
Thickness be 120~240 nanometers.Transparent gate electrode is in the conductive transparent material such as indium tin oxide, fluorine tin-oxide, graphene
One or more synthetic materials, transparent gate electrode is compared to the positive silver-colored gate electrode of tradition, due to that with translucency, can make cell piece just
The light absorbing effective area in face increased, so as to preferably improve the effective area that luminous energy is converted into electric energy；
（5）Use physical vapour deposition (PVD)（PVD）Method transparent anti-reflection layer, transparent anti-reflection layer are made above transparent gate electrode
Thickness be 15~20 microns.On the one hand transparent anti-reflection layer plays the passivation on cell piece surface, improves the reliable of battery
Property, on the other hand play a part of incident light anti-reflection, the material of the transparent anti-reflection layer is silicon nitride, silica, three oxidations
One kind in the transparent materials such as two aluminium；
（6）Secondary graphical treatment is carried out using techniques such as photoetching, dry or wet etch on transparent anti-reflection layer, is formed
Micro-nano collector lens, micro-nano collector lens is convex tapered structure, and convex tapered structure includes equally distributed multiple convex cones, convex cone bottom
A width of 2~3 microns of face, is highly 1~2 micron, and the spacing of convex cone and convex cone is 0.2~0.5 micron.Micro-nano collector lens 51
The upper surface of convex cone is an approximate sphere, and the radian of myopic spherical is 2.5~3.5rad.
The method of micro-nano collector lens etching is identical with once patterned step, and the structure can play optically focused effect,
More luminous energy are received, so as to improve photoelectric transformation efficiency；
（7）Positive electrode window region, positive electrode are etched on transparent anti-reflection layer using photoetching, dry or wet etch technique
Window region bottom is connected with transparent gate electrode upper epidermis；
（8）With silk-screen printing technique, the positive silver electrode of filling printing in front electrode window region, the material of selection be with
One or more synthetic materials in the silver paste of electric conductivity, aluminium paste, preferential selection silver paste, the thickness of positive silver electrode is 15~25
Micron；
（9）Silver electrode is carried on the back in cell piece back up with silk-screen printing technique, the material of selection is conductive silver
One or more synthetic materials in slurry, aluminium paste, preferential selection silver paste carries on the back the thickness of silver electrode 15 at 15~25 microns；
（10）Cell piece is sent into sintering furnace and sintered, sintering temperature forms Ohmic contact at 800~1000 DEG C.Finally
Required high-photoelectric transformation efficiency solar cell is made.
It should be appreciated that above-mentioned embodiment of the present utility model is used only for exemplary illustration or explains this reality
With new principle, without constituting to limitation of the present utility model.Therefore, without departing from spirit and scope of the present utility model
In the case of any modification, equivalent substitution and improvements done etc., should be included within protection domain of the present utility model.In addition,
The utility model appended claims are intended to fall into scope and border or this scope and border
Whole in equivalents changes and modifications example.
Claims (7)
1. a kind of high-photoelectric transformation efficiency solar cell, it is characterised in that including：
One p-type dope semiconductor substrates, the p-type dope semiconductor substrates have a first surface and with the first surface phase
To a second surface；
One back electrode, the back electrode is arranged at first surface, and with the first surface Ohmic contact；
One first convex tapered structure, the first convex tapered structure is formed by graphical treatment in the second surface；
One n type diffused layer, the n type diffused layer is formed by carrying out phosphorus diffusion in the first convex cone type body structure surface；
One transparent gate electrode, the transparent gate electrode is made up of conductive transparent material, is arranged above n type diffused layer, and and N-type
Diffusion layer Ohmic contact；
One transparent anti-reflection layer, is made of clear material；Positive electrode window region, the positive electrode are etched with the transparent anti-reflection layer
Window region bottom is connected with transparent gate electrode upper epidermis, and the positive electrode window region is provided with positive electrode, the positive electrode with thoroughly
Bright gate electrode Ohmic contact.
2. high-photoelectric transformation efficiency solar cell according to claim 1, it is characterised in that the first convex cone type knot
Structure includes equally distributed multiple convex cones, and a width of 2~3 microns of the convex cone bottom surface, is highly 1~2 micron, convex cone and convex cone
Spacing is 0.2~0.5 micron.
3. high-photoelectric transformation efficiency solar cell according to claim 1, it is characterised in that the transparent gate electrode is
One or more synthetic materials of indium tin oxide, fluorine tin-oxide or graphene, thickness is 120~240 nanometers.
4. high-photoelectric transformation efficiency solar cell according to claim 1, it is characterised in that the transparent anti-reflection layer
Material is silicon nitride, silica or alundum (Al2O3), and thickness is 15~20 microns.
5. the high-photoelectric transformation efficiency solar cell according to claim any one of 1-4, it is characterised in that described transparent
Anti-reflection layer upper surface is etched with micro-nano collector lens, and the micro-nano collector lens is the second convex tapered structure, second convex cone
Type structure include equally distributed multiple convex cones, a width of 2~3 microns of the convex cone bottom surface, is highly 1~2 micron, convex cone with it is convex
The spacing of cone is 0.2~0.5 micron.
6. high-photoelectric transformation efficiency solar cell according to claim 5, it is characterised in that the micro-nano collector lens
The upper surface of convex cone be approximate sphere, the radian of the approximate sphere is 2.5~3.5rad.
7. high-photoelectric transformation efficiency solar cell according to claim 1, it is characterised in that the p-type doping is partly led
Body substrate is one kind in monocrystalline silicon, polysilicon, non-crystalline silicon, GaAs, aluminium indium phosphorus, cadmium sulfide or cadmium antimonide material.
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| CN201720050335.3U CN206353538U (en) | 2017-01-17 | 2017-01-17 | A kind of high-photoelectric transformation efficiency solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039538A (en) * | 2017-01-17 | 2017-08-11 | 苏州瑞而美光电科技有限公司 | A kind of high-photoelectric transformation efficiency solar cell and preparation method thereof |
| CN109378353A (en) * | 2018-12-04 | 2019-02-22 | 厦门乾照半导体科技有限公司 | A kind of solar battery structure and preparation method thereof |
-
2017
- 2017-01-17 CN CN201720050335.3U patent/CN206353538U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039538A (en) * | 2017-01-17 | 2017-08-11 | 苏州瑞而美光电科技有限公司 | A kind of high-photoelectric transformation efficiency solar cell and preparation method thereof |
| CN107039538B (en) * | 2017-01-17 | 2019-07-16 | 苏州瑞而美光电科技有限公司 | A kind of high-photoelectric transformation efficiency solar battery and preparation method thereof |
| CN109378353A (en) * | 2018-12-04 | 2019-02-22 | 厦门乾照半导体科技有限公司 | A kind of solar battery structure and preparation method thereof |
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