CN206312889U - A kind of package structure of self-adapting type semiconductor - Google Patents
A kind of package structure of self-adapting type semiconductor Download PDFInfo
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- CN206312889U CN206312889U CN201621481874.4U CN201621481874U CN206312889U CN 206312889 U CN206312889 U CN 206312889U CN 201621481874 U CN201621481874 U CN 201621481874U CN 206312889 U CN206312889 U CN 206312889U
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- wire
- wire matrix
- semiconductor chip
- matrix
- gai
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000011159 matrix material Substances 0.000 claims abstract description 49
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 description 9
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of package structure of self-adapting type semiconductor, including semiconductor chip, cross Ka Gai, the first wire matrix and the second wire matrix；The cross Ka Gai with through hole is provided with above the semiconductor chip；The first wire matrix that bottom is rectangular channel is provided with below semiconductor chip, the bottom of the rectangular channel is provided with rectangular radiator；Set fluted on second wire matrix, the bottom of groove is provided with heat dissipating layer；First wire matrix is arranged in groove；Wire is respectively arranged with first wire matrix and the second wire matrix.The utility model is provided with the Ka Gai of through hole by using four pin, and the position of semiconductor chip can be fixed, it is ensured that semiconductor chip is one overall with Ka Gai, improves package quality；By setting multiple radiator structures, radiating effect is improved；Realized to the requirement of the size of semiconductor packages by the quantity for changing wire matrix, with strong adaptability, low cost and the characteristics of reuse.
Description
Technical field
The utility model belongs to technical field of semiconductor encapsulation, is related to a kind of packaging part knot of self-adapting type semiconductor
Structure.
Background technology
With continuing to develop for integrated circuit, the encapsulation of integrated circuit requires also more and more higher, and common packaging technology is
Chip is fixed on lead frame, chip is packaged by adhesive tape and is wrapped up protection, so as to realize to semiconductor structure
Encapsulation.
The encapsulating structure of current chip, chip is bonded on the base of chip by with elargol, is led to during encapsulation
Overbaking step carrys out curing chip so that chip is fixed on chip carrier.During encapsulation, solidified using elargol, not only
Increase cost, and so that the poor radiation of chip, the life-span for causing chip to use is shorter, while the encapsulation of chip has size
It is fixed, it is impossible to adapt to different working environments, cause the region of encapsulation to be restricted, with high cost, thermal diffusivity and use model
Narrow shortcoming is enclosed, therefore, a kind of package structure of self-adapting type semiconductor need to be designed.
Utility model content
The package structure of a kind of self-adapting type semiconductor that the utility model is provided, by setting on a semiconductor die
There is Ka Gai, and card is covered and is provided with through hole；By setting multiple heat abstractors, the radiating effect of semiconductor packages is improved；Pass through
The quantity of wire matrix is being added or reduced, is changing the size of encapsulation, the package dimension for solving semiconductor is being fixed and dissipated
The problem of hot difference.
The purpose of this utility model can be achieved through the following technical solutions：
A kind of package structure of self-adapting type semiconductor, including semiconductor chip, cross Ka Gai, the first wire matrix
With the second wire matrix；
Cross Ka Gai is provided with above the semiconductor chip, the cross card is covered and is provided with through hole；
The first wire matrix is provided with below the semiconductor chip, the bottom of the first wire matrix is provided with square
Shape groove；The semiconductor chip is arranged in rectangular channel, and the bottom of the rectangular channel is provided with rectangular radiator；
Set fluted on the second wire matrix, the bottom of the groove is provided with heat dissipating layer, first wire
Matrix is arranged in groove；
The upper surface of the first wire matrix is provided with the first wire；The upper surface of the second wire matrix is provided with
Second wire.
Further, be respectively arranged with a through hole on four pin of the cross Ka Gai, the section of the through hole for it is circular,
Square or kidney-shaped.
Further, width of the caliber size of the through hole less than cross Ka Gai.
Further, the quantity of first wire is more than or equal to the number of pins of semiconductor chip, and first wire leads to
Scolding tin is crossed to be connected with the pin of semiconductor chip.
Further, the upper surface of the upper surface of the second wire matrix and the first wire matrix is in same level
On.
Further, the extended line of second wire overlaps with the first wire, and the quantity of second wire is equal to
The quantity of the first wire.
Further, there is clearance aperture between the first wire matrix and the second wire matrix, second wire leads to
Cross and be connected with the first wire to injection scolding tin in the clearance aperture.
The beneficial effects of the utility model：The utility model is provided with the Ka Gai of through hole by using four pin, can be half-and-half
The position of conductor chip is fixed, it is ensured that semiconductor chip is one overall with Ka Gai, improves package quality；It is multiple by setting
Radiator structure, improves radiating effect；Size requirement to semiconductor packages is realized by the quantity for changing wire matrix, with suitable
The characteristics of Ying Xingqiang, low cost and reuse.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the utility model embodiment, make required for being described to embodiment below
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present utility model,
For those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Other accompanying drawings.
Fig. 1 is a kind of package structure schematic diagram of self-adapting type semiconductor of the utility model；
Fig. 2 is a kind of packaging part generalized section of self-adapting type semiconductor of the utility model；
In accompanying drawing, the list of parts representated by each label is as follows：
1- semiconductor chips, 2- cross Ka Gai, 3- the first wire matrixes, 4- the second wire matrixes, the wires of 5- first, 6-
Fin, 7- through holes, 8- clearance apertures, 9- rectangular channels, the wires of 10- second, 11- grooves, 12- heat dissipating layers.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The all other embodiment for being obtained, belongs to the scope of the utility model protection.
Refer to Fig. 1, shown in 2, a kind of package structure of self-adapting type semiconductor, including semiconductor chip 1, cross
Card lid 2, the first wire matrix 3 and the second wire matrix 4；
The top of semiconductor chip 1 is provided with cross card lid 2, four installation feet of cross card lid 2 respectively with partly lead
The socket connection of the surrounding of body chip 1, serves fixed to semiconductor chip 1；Cross card lid 2 is in crosswise, cross
A through hole 7, the wherein width of the caliber size less than cross card lid 2 of through hole 7, through hole 7 are respectively arranged with four pin of card lid 2
Section be circular, square or kidney-shaped.
The lower section of semiconductor chip 1 is provided with the first wire matrix 3, and the bottom of the first wire matrix 3 is provided with rectangular channel
9；Semiconductor chip 1 is arranged in rectangular channel 9, and the bottom of rectangular channel 9 is provided with rectangular radiator 6, and fin 6 is to semiconductor core
Piece 1 has the effect of radiating, increases the thermal diffusivity of semiconductor chip 1；The surrounding of the upper surface of the first wire matrix 3 is provided with many
Individual the first parallel wire 5, the number of pins of the quantity more than or equal to semiconductor chip 1 of the first wire 5, the first wire 5 is by weldering
Tin is connected with the pin of semiconductor chip 1.
The middle part of the second wire matrix 4 sets fluted 11, and the bottom of groove 11 is provided with heat dissipating layer 12, heat dissipating layer 12
Interior filling heat dissipating substance, the first wire 5 on 12 pairs of the first wire matrixes 3 of heat dissipating layer radiates；Second wire matrix 4 it is upper
The upper surface of surface and the first wire matrix 3 is provided with multiple flat in same level in the upper surface of the second wire matrix 4
The second capable wire 10, the extended line of the second wire 10 overlaps with the first wire 5；First wire matrix 3 and the second wire matrix 4
Between there is clearance aperture 8, by injecting scolding tin in clearance aperture 8 so that the second wire 10 is connected with the first wire 5, wherein
The quantity of the second wire 10 is equal to the quantity of the first wire 5 on the first wire matrix 3 on two wire matrixes 4.
During encapsulation, semiconductor chip 1 is arranged in the rectangular channel of the first wire matrix 3, and in semiconductor
Fin 6 is installed between chip 1 and rectangular channel 9, and cross card lid 2 is arranged on the upper surface of semiconductor chip 1, pass through
Cross card lid 2 and semiconductor chip 1 are fixed to gel is injected in through hole 7.
In addition, the package dimension of semiconductor can be changed by increasing or decreasing the quantity of wire matrix.
The utility model is provided with the Ka Gai of through hole by using four pin, and the position of semiconductor chip can be consolidated
It is fixed, it is ensured that semiconductor chip is one overall with Ka Gai, improves package quality；By setting multiple radiator structures, radiating effect is improved
Really；Size requirement to semiconductor packages is realized by the quantity for changing wire matrix, with strong adaptability, low cost and repetition
The characteristics of using.
Above content is only to the utility model structure example and explanation, the technology people of affiliated the art
Member is made various modifications or supplement to described specific embodiment or is substituted using similar mode, without departing from reality
With new structure or surmount scope defined in the claims, protection domain of the present utility model all should be belonged to.
Claims (7)
1. a kind of package structure of self-adapting type semiconductor, it is characterised in that：Including semiconductor chip (1), cross Ka Gai
(2), the first wire matrix (3) and the second wire matrix (4)；
Cross Ka Gai (2) is provided with above the semiconductor chip (1), through hole is provided with the cross Ka Gai (2)
(7)；
The first wire matrix (3) is provided with below the semiconductor chip (1), the bottom of the first wire matrix (3) sets
It is equipped with rectangular channel (9)；In rectangular channel (9), the bottom of the rectangular channel (9) is provided with square to the semiconductor chip (1)
Shape fin (6)；
Set fluted (11) on the second wire matrix (4), the bottom of the groove (11) is provided with heat dissipating layer (12), institute
The first wire matrix (3) is stated to be arranged in groove (11)；
The upper surface of the first wire matrix (3) is provided with the first wire (5)；The upper surface of the second wire matrix (4)
It is provided with the second wire (10).
2. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：It is described cross
A through hole (7) is respectively arranged with four pin of Ka Gai (2), the section of the through hole (7) is circular, square or kidney-shaped.
3. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：The through hole
(7) width of the caliber size less than cross Ka Gai (2).
4. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：Described first leads
, more than or equal to the number of pins of semiconductor chip (1), first wire (5) is by scolding tin and semiconductor chip for the quantity of line (5)
(1) pin connection.
5. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：Described second leads
The upper surface of the upper surface of line matrix (4) and the first wire matrix (3) is in same level.
6. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：Described second leads
The extended line of line (10) overlaps with the first wire (5), and second wire (10) quantity be equal to the first wire (5) number
Amount.
7. the package structure of a kind of self-adapting type semiconductor according to claim 1, it is characterised in that：Described first leads
There is clearance aperture (8) between line matrix (3) and the second wire matrix (4), second wire (10) is by the clearance aperture
(8) injection scolding tin is connected with the first wire (5) in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621481874.4U CN206312889U (en) | 2016-12-30 | 2016-12-30 | A kind of package structure of self-adapting type semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621481874.4U CN206312889U (en) | 2016-12-30 | 2016-12-30 | A kind of package structure of self-adapting type semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206312889U true CN206312889U (en) | 2017-07-07 |
Family
ID=59248401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621481874.4U Active CN206312889U (en) | 2016-12-30 | 2016-12-30 | A kind of package structure of self-adapting type semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206312889U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146152A (en) * | 2019-10-30 | 2020-05-12 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Semiconductor packaging part |
-
2016
- 2016-12-30 CN CN201621481874.4U patent/CN206312889U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146152A (en) * | 2019-10-30 | 2020-05-12 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Semiconductor packaging part |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220623 Address after: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Address before: 6 / F, building B, public service and applied technology R & D Center for scientific and technological innovation, Hewu Beng Experimental Zone, 860 Wangjiang West Road, high tech Zone, Hefei City, Anhui Province, 230000 Patentee before: HEFEI HUADA SEMICONDUCTOR Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 230000, No. 66 Tiantangzhai Road, High tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Country or region after: China Address before: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee before: Hefei Huayu Semiconductor Co.,Ltd. Country or region before: China |
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| CP03 | Change of name, title or address |