CN206301802U - A kind of high-quality AlGaN/GaN growth structures of selective area epitaxial - Google Patents
A kind of high-quality AlGaN/GaN growth structures of selective area epitaxial Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 33
- 230000012010 growth Effects 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005036 potential barrier Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 238000000151 deposition Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- -1 quantum well Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
The utility model is related to the technical field of semiconductor epitaxial process, more particularly, to a kind of high-quality AlGaN/GaN growth structures of selective area epitaxial.A kind of high-quality AlGaN/GaN growth structures of selective area epitaxial, including substrate, in Grown stress-buffer layer, on stress-buffer layer grow GaN cushions, one layer of SiO deposited on GaN cushions2As mask layer；It is additionally included in the GaN channel layers of not masked region growing, deposits AlGaN potential barrier depositing Al N layers on GaN channel layers, on AlN layers.The utility model can effectively suppress the parasitic channel at regrowth interface in selective area epitaxial, improve the AlGaN/GaN heterojunction structure quality of selective area epitaxial growth, reduce the leakage current of epitaxial layer.
Description
Technical field
The utility model is related to the technical field of semiconductor epitaxial process, high-quality more particularly, to a kind of selective area epitaxial
The AlGaN/GaN growth structures of amount.
Background technology
Selective area growth（SAG）Technology suffers from being widely applied in semiconductor epitaxial growth and device fabrication arts.
In terms of semiconductor epitaxial growth, epitaxial lateral overgrowth is realized using SAG technologies, reduction be through to the dislocation density of material surface and
Control crystal mass.In semiconductor devices manufacture view, SAG technologies can be used for the preparation of special construction in planar technology, such as
The p-GaN layer in the highly doped ohmic contact regions of N-shaped and p-n junction type HFET in base stage or emitter stage, the AlGaN/GaN HFET of HBT
Etc..In addition, some semiconductor microactuator micro-nano structures, such as quantum well, quantum dot can also be related to selection region extension.
2011, Yuhua Wen et al. also proposed a kind of enhanced device of the notched gates based on selection region epitaxy method
The implementation method of part（Applied Physics Letters, Vol.98, p072108, 2011）, it is to avoid plasma quarter
Erosion prepares damage of the groove to device active region, helps to increase the reliability and stability of device.Selection region extension is general
Need on backing material by mask layer graphically come the region for selecting to need to grow, but this masking process process can draw
Enter growth interface problem.First, on the material and substrate of selection region extension there is inevitably growth in original storeroom
Interface, the native oxide on GaN material surface and the impurity of absorption can introduce defect state, while the substrate material that a secondary growth is completed
Surface is expected in the presence of a large amount of dangling bonds and there is the phenomenon of surface reconstruction.With SAG technologies Comparison study in other respects, for giving birth to
The challenge of heterojunction structure AlGaN/GaN barrier layers long is bigger.Because：（1）Selection region epitaxy layer thickness is in tens nanometers
Left and right, conducting channel is easily influenceed near growth interface by interface non-ideal factor.（2）Selection region epitaxial layer
With Stress Release easily forming layer island growth pattern, the 2DEG that will be directly influenced at crystal mass and heterojunction boundary is dense
Degree and mobility.It is therefore desirable to seek a kind of selective area growth interface protection structure, to overcome the shortcoming in traditional handicraft.
The content of the invention
The utility model is to overcome at least one defect described in above-mentioned prior art, there is provided a kind of selective area epitaxial high-quality
AlGaN/GaN growth structures, be a kind of structure of the improvement of selection region extension AlGaN/GaN heterojunction structure quality.The knot
Structure can be used for preparing recessed grid normally-off GaN base device, improve on state characteristic and the OFF state electric leakage of device.
In order to solve the above technical problems, the technical solution adopted in the utility model is：A kind of selective area epitaxial is high-quality
AlGaN/GaN growth structures, including substrate, Grown stress-buffer layer, on stress-buffer layer grow GaN buffering
Layer, one layer of SiO of deposition on GaN cushions2As mask layer；Be additionally included in not masked region growing GaN channel layers,
AlGaN potential barrier is deposited depositing Al N layers on GaN channel layers, on AlN layers.
Described substrate is any one in Si substrates, Sapphire Substrate, silicon carbide substrates, GaN self-supported substrates.Institute
The stress-buffer layer stated is any one of AlN, AlGaN, GaN or combines；Stress-buffer layer thickness is 10 nm~10 μm.It is described
GaN cushions be the GaN epitaxial layer of unintentional doping or the high resistant GaN epitaxial layer of doping, the doping of the doping resistive formation
Element is carbon, iron or magnesium；GaN buffer layer thicknesses are 100 nm ~ 10 μm.Described GaN channel layers thickness is 1nm ~ 500 nm.
In described AlN layers, thickness is 0-10 nm.Described AlGaN potential barrier, thickness is 5-50 nm；AlGaN potential barrier material is
One kind or any several combination in AlInN, AlInGaN, AlN.
In the utility model, TMIn assisting growths are introduced in selection region extension GaN channel layers, due to selection region life
The non-ideal factor at interface long is present causes selection region epitaxial layer, easy forming layer island growth pattern, while deriving defect.Directly
Connect and have influence on 2DEG concentration and mobility at crystal mass and heterojunction boundary.TMIn plays the role of surface active, can be auxiliary
Aided metal source migrates, and is uniformly distributed atom, reduces defect, improves the crystal matter of interface performance and selection region epitaxial film materials
Amount.Specifically comprise the steps of：
S1., a kind of substrate is provided；
S2. in Grown stress-buffer layer；
S3. GaN cushions are grown on stress-buffer layer；
S4. one layer of SiO is deposited on GaN cushions2, as mask layer；
S5. removal needs the mask layer in selective area epitaxial region, realizes to the graphical of mask layer；
S6. in the GaN channel layers of not masked area deposition TMIn sources assisting growth；
S7. depositing Al N layers on GaN channel layers；
S8. AlGaN potential barrier is deposited on AlN layers；
S9. etching removes mask layer.
In step S6, TMIn sources assisting growth is introduced in selection region extension GaN channel layers.TMIn has surface active
Effect, energy assistant metal source migration, is uniformly distributed atom, reduces defect, improves interface performance, while improving outside selection region
Prolong GaN crystal quality.
Substrate in step sl can be the substrate or the epitaxial layer with heterogeneity of single component.
In step s 2, stress-buffer layer is that Metalorganic Chemical Vapor Deposition or molecular beam epitaxy grow.
In step s3, GaN cushions are that Metalorganic Chemical Vapor Deposition or molecular beam epitaxy grow.
In step s 4, the mask layer is by plasma enhanced chemical vapor deposition or ald.
Or physical vapour deposition (PVD) or magnetic control sputtering plating method are formed.Preferably, the dielectric layer can be in step s 4
SiO2、SiNx、Al2O3、HfO2、MgO、Sc2O3, any one in AlHfOx, HfSiON.
In step s 5, the photoresist is positivity or negative photoresist.
The selection region epitaxial layer described in step S6-S7 is Metalorganic Chemical Vapor Deposition or molecular beam epitaxy
Growth.
Compared with prior art, beneficial effect is：A kind of selection region extension AlGaN/GaN hetero-junctions of the utility model
Growth interface improves structure.Beneficial effect compared with traditional selection region extension is：Because TMIn plays the role of surface active,
The migration of energy assistant metal source, is uniformly distributed atom.Relatively lower dislocation density and more smooth material list can so be obtained
Face, and then improve the crystal mass of GaN channel layers and AlGaN potential barrier.The structure can be used for preparing recessed grid normally-off GaN base
Device, improves the interface problem of selection region extension and improves device performance.
Brief description of the drawings
Fig. 1-8 is the preparation method process schematic representation of the embodiment of the present invention.
Specific embodiment
Accompanying drawing being for illustration only property explanation, it is impossible to be interpreted as the limitation to this patent；It is attached in order to more preferably illustrate the present embodiment
Scheme some parts to have omission, zoom in or out, do not represent the size of actual product；To those skilled in the art,
Some known features and its explanation may be omitted and will be understood by accompanying drawing.Being for illustration only property of position relationship described in accompanying drawing
Explanation, it is impossible to be interpreted as the limitation to this patent.
Embodiment 1
The selection region epitaxial structure schematic diagram of the present embodiment is illustrated in figure 8, its structure includes lining successively from lower to upper
Bottom 1, stress-buffer layer 2, GaN channel layers 3, AlN insert layers 4, AlGaN potential barrier 5.The making of above-mentioned selection region epitaxial structure
Method as Figure 1-Figure 8, is comprised the following steps：
1) a kind of substrate 1 is provided；As shown in Figure 1.
2) growth stress cushion 2 on substrate 1；As shown in Figure 2.
3) GaN channel layers 3 are grown on stress-buffer layer；As shown in Figure 3.
4) one layer of SiO is deposited on GaN channel layers 32, as mask layer 7；As shown in Figure 4.
5) removal needs the mask layer in selective area epitaxial region, realizes to the graphical of mask layer.As shown in Figure 5.
6) in the GaN channel layers 4 of not masked area deposition TMIn assisting growths.As shown in Figure 6.
7) depositing Al N layers 5 on GaN channel layers 4.
8) AlGaN potential barrier 6 is deposited on AlN layers 5,
9) it is etched away mask layer.As shown in Figure 8.
So far, the preparation process of whole selection region epitaxial material is completed.The material structure that Fig. 8 is embodiment 1 shows
It is intended to.
Embodiment 2
The selection region epitaxial structure schematic diagram of the present embodiment is illustrated in figure 8, its structure includes lining successively from lower to upper
Bottom 1, stress-buffer layer 2, GaN channel layers 3, AlN insert layers 4, AlGaN potential barrier 5.The making of above-mentioned selection region epitaxial structure
Method as Figure 1-Figure 8, is comprised the following steps：
1) a kind of substrate 1 is provided；As shown in Figure 1.
2) growth stress cushion 2 on substrate 1；As shown in Figure 2.
3) GaN channel layers 3 are grown on stress-buffer layer；As shown in Figure 3.
4) one layer of SiO is deposited on GaN channel layers 32, as mask layer 7；As shown in Figure 4.
5) removal needs the mask layer in selective area epitaxial region, realizes to the graphical of mask layer.As shown in Figure 5.
6) in the GaN channel layers 4 of not masked area deposition TMIn assisting growths.As shown in Figure 6.
7) AlN layers 5 of TMIn assisting growths is deposited on GaN channel layers 4.
8) AlGaN potential barrier 6 of TMIn assisting growths is deposited on AlN layers 5,
9) it is etched away mask layer.As shown in Figure 8.
So far, the preparation process of whole selection region epitaxial material is completed.The material structure that Fig. 8 is embodiment 2 shows
It is intended to.Its advantage is the less Al atoms permeatings of TMIn auxiliary atom diffusion lengths, improves AlGaN layer crystal mass so as to be lifted
Selection region extension AlGaN/GaN heterojunction structure transport properties.
Obviously, above-described embodiment of the present utility model is only intended to clearly illustrate the utility model example, and
It is not the restriction to implementation method of the present utility model.For those of ordinary skill in the field, in described above
On the basis of can also make other changes in different forms.There is no need and unable to give all of implementation method
It is exhaustive.All any modification, equivalent and improvement made within spirit of the present utility model and principle etc., should be included in
Within the utility model scope of the claims.
Claims (6)
1. a kind of high-quality AlGaN/GaN growth structures of selective area epitaxial, including substrate（1）, in substrate（1）The stress of upper growth
Cushion（2）, on stress-buffer layer grow GaN cushions（3）, in GaN cushions（3）One layer of SiO of upper deposition2As
Mask layer（7）；It is additionally included in the GaN channel layers of not masked region growing（4）, in GaN channel layers（4）The AlN of upper deposition
Layer（5）, at AlN layers（5）The AlGaN potential barrier of upper deposition（6）；Substrate（1）It is Si substrates, Sapphire Substrate, carborundum lining
Any one in bottom, GaN self-supported substrates.
2. high-quality AlGaN/GaN growth structures of a kind of selective area epitaxial according to claim 1, it is characterised in that：Institute
The stress-buffer layer thickness stated is 10 nm~10 μm.
3. high-quality AlGaN/GaN growth structures of a kind of selective area epitaxial according to claim 1, it is characterised in that：Institute
The GaN cushions stated（3）It is the GaN epitaxial layer or the high resistant GaN epitaxial layer of doping of unintentional doping；GaN buffer layer thicknesses are
100 nm~10 μm。
4. high-quality AlGaN/GaN growth structures of a kind of selective area epitaxial according to claim 1, it is characterised in that：Institute
The GaN channel layers stated（4）Thickness is 1nm ~ 500 nm.
5. high-quality AlGaN/GaN growth structures of a kind of selective area epitaxial according to claim 1, it is characterised in that：Institute
AlN layers for stating（5）In, thickness is 0-10 nm.
6. high-quality AlGaN/GaN growth structures of a kind of selective area epitaxial according to claim 1, it is characterised in that：Institute
The AlGaN potential barrier stated（6）, thickness is 5-50 nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198747A (en) * | 2018-01-09 | 2018-06-22 | 湖南理工学院 | A kind of method that secondary epitaxy growth prepares gallium nitride material |
| CN109427779A (en) * | 2017-08-22 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN111446296A (en) * | 2020-04-03 | 2020-07-24 | 中国科学院半导体研究所 | P-type gate enhanced gallium nitride-based high-mobility transistor structure and manufacturing method thereof |
| US20220384632A1 (en) * | 2021-05-25 | 2022-12-01 | United Microelectronics Corp. | Nitride semiconductor device and manufacturing method thereof |
-
2016
- 2016-09-05 CN CN201621037359.7U patent/CN206301802U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109427779A (en) * | 2017-08-22 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN109427779B (en) * | 2017-08-22 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN108198747A (en) * | 2018-01-09 | 2018-06-22 | 湖南理工学院 | A kind of method that secondary epitaxy growth prepares gallium nitride material |
| CN111446296A (en) * | 2020-04-03 | 2020-07-24 | 中国科学院半导体研究所 | P-type gate enhanced gallium nitride-based high-mobility transistor structure and manufacturing method thereof |
| US20220384632A1 (en) * | 2021-05-25 | 2022-12-01 | United Microelectronics Corp. | Nitride semiconductor device and manufacturing method thereof |
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