CN206282824U - SPM and power electronic equipment - Google Patents
SPM and power electronic equipment Download PDFInfo
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- CN206282824U CN206282824U CN201621285506.2U CN201621285506U CN206282824U CN 206282824 U CN206282824 U CN 206282824U CN 201621285506 U CN201621285506 U CN 201621285506U CN 206282824 U CN206282824 U CN 206282824U
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model provides a kind of SPM and power electronic equipment, wherein, SPM includes：The positive side of substrate is compounded with insulating barrier and wiring successively；Isolation channel, first area and second area are divided into by the substrate；High-power component, on the first area, the high-power component includes MOSFET, IGBT and fast recovery diode；Low power devices, on the second area, the low power devices include high speed integral control circuit；Bonding line, is connected between the low power devices and the high-power component.By technical solutions of the utility model, heat interference of the SPM high to low SPM is reduced, on the premise of production cost is not improved, further improve the reliability and heat endurance of SPM.
Description
Technical field
The utility model is related to SPM technical field, in particular to a kind of SPM and one
Plant power electronic equipment.
Background technology
SPM, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive device (Deriver Integrated Circuit, i.e. Driver IC) that road technique is combined.Due to collecting with height
The advantages such as Cheng Du, high reliability, SPM wins increasing market, is particularly suitable for the frequency converter of motor
And various inverters, it is the conventional power electronics of frequency control, metallurgical machinery, electric propulsion, servo-drive and frequency-conversion domestic electric appliances
Device.
The circuit structure of existing SPM 100 is as shown in Figure 1：
The VCC of HVIC (Hyper-Velocity integrated circuit, high speed integral control circuit) chip 101
End is generally 15V as low-pressure area power supply the anode VDD, VDD of the SPM 100；The HVIC chips 101
HIN1 ends as bridge arm input UHIN in the U phases of the SPM 100；The HIN2 ends of the HVIC chips 101
As bridge arm input VHIN in the V phases of the SPM 100；The HIN3 ends of the HVIC chips 101 are used as described
Bridge arm input WHIN in the W phases of SPM 100；The LIN1 ends of the HVIC chips 101 are used as the intelligent power
Bridge arm input ULIN under the U phases of module 100；The LIN2 ends of the HVIC chips 101 are used as the SPM 100
Bridge arm input VLIN under V phases；The LIN3 ends of the HVIC chips 101 are used as bridge arm under the W phases of the SPM 100
Input WLIN；Here, the six tunnels input of U, V, W three-phase of the SPM 100 receives the input signal of 0~5V；
The GND ends of the HVIC chips 101 as the SPM 100 low-pressure area power supply negative terminal COM；The HVIC
The VB1 ends of chip 101 as the SPM 100 U phases higher-pressure region power supply anode UVB；The HVIC chips
101 HO1 ends are connected with the base stage of bridge arm IGBT pipes 121 in U phases；Managed with the IGBT at the VS1 ends of the HVIC chips 101
The colelctor electrode of bridge arm IGBT pipes 124, the negative electrode of FRD pipes 114 are connected, and make under 121 emitter stage, the anode of FRD pipes 111, U phases
It is the U phases higher-pressure region power supply negative terminal UVS of the SPM 100；The VB2 ends of the HVIC chips 101 are used as institute
State the U phases higher-pressure region power supply anode VVB of SPM 100；The HO3 ends of the HVIC chips 101 and bridge arm in V phases
The base stage of IGBT pipes 123 is connected；The emitter stage of the VS2 ends of the HVIC chips 101 and the IGBT pipes 122, FRD pipes 112
The colelctor electrode of bridge arm IGBT pipes 125, the negative electrode of FRD pipes 115 are connected under anode, V phases, and as the SPM 100
W phases higher-pressure region power supply negative terminal VVS；The VB3 ends of the HVIC chips 101 as the SPM 100 W phases
Higher-pressure region power supply anode WVB；The HO3 ends of the HVIC chips 101 are connected with the base stage of bridge arm IGBT pipes 123 in W phases；Institute
State bridge arm IGBT pipes 126 under the VS3 ends of HVIC chips 101 and emitter stage, the anode of FRD pipes 113, the W phases of the IGBT pipes 123
Colelctor electrode, the negative electrode of FRD pipes 116 be connected, and as the W phases higher-pressure region power supply negative terminal of the SPM 100
WVS；The LO1 ends of the HVIC chips 101 are connected with the base stage of the IGBT pipes 124；The LO2 ends of the HVIC chips 101 with
The base stage of the IGBT pipes 125 is connected；The LO3 ends of the HVIC chips 101 are connected with the base stage of the IGBT pipes 126；It is described
The emitter stage of IGBT pipes 124 is connected with the anode of the FRD pipes 114, and as the low electricity of U phases of the SPM 100
Pressure reference edge UN；The emitter stage of the IGBT pipes 125 is connected with the anode of the FRD pipes 115, and as the intelligent power mould
The V phase low reference voltages end VN of block 100；The emitter stage of the IGBT pipes 126 is connected with the anode of the FRD pipes 116, and conduct
The W phase low reference voltages end WN of the SPM 100；The moon of the colelctor electrode of the IGBT pipes 121, the FRD pipes 111
Pole, the colelctor electrode of the IGBT pipes 122, the negative electrode of the FRD pipes 112, the colelctor electrode of the IGBT pipes 123, FRD pipes
113 negative electrode is connected, and high voltage input P, P as the SPM 100 typically meets 300V.
Wherein, the effect of the HVIC chips 101 is：By input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3
The logical signal of 0~5V passes to output end HO1, HO2, HO3 and LO1, LO2, LO3 respectively, and wherein HO1, HO2, HO3 is VS~VS
The logical signal of+15V, LO1, LO2, LO3 are the logical signals of 0~15V.
Reference picture 2 (A) and Fig. 2 (B) illustrate the structure of existing SPM 100.
Fig. 2 (A) is the top view taken out after potting resin of the SPM 100.
Fig. 2 (B) is X-X ' the line profiles of Fig. 2 (A).
As shown in Fig. 2 (A) and Fig. 2 (B), SPM includes：Circuit substrate 206；Located at foregoing circuit substrate 206
The foregoing circuit wiring 208 formed on insulating barrier 207 on surface；It is fixed on the above-mentioned IGBT in foregoing circuit wiring 208
The components such as pipe 121~126, above-mentioned FRD pipes 111~116, above-mentioned HVIC chips 101；Connection component and foregoing circuit wiring
208 metal wire 205；The pin 201 being connected with foregoing circuit wiring 208；At least one side of foregoing circuit substrate 206 is sealed
Resin 202 is sealed, and in order to improve sealing, in order to improve thermal diffusivity, all sealings of circuit substrate 206 can be made into above-mentioned aluminium
The back side of substrate 206 is sealed in the state of being exposed to outside.
The manufacture method of above-mentioned SPM includes：Aluminium is formed appropriately sized as foregoing circuit substrate 206,
Above-mentioned insulating barrier 207 is set on the surface of foregoing circuit substrate 206 and Copper Foil is formed on above-mentioned insulating barrier 207, by etching
Copper Foil is set to form foregoing circuit wiring 208；In the ad-hoc location application tin cream of foregoing circuit wiring 208；Placed on tin cream
State component and above-mentioned pin 201；Solidify tin cream by Reflow Soldering, above-mentioned component and above-mentioned pin 101 are fixed on above-mentioned
On wiring 208；By cleaning ways such as spray, ultrasounds, removing remains in the scaling powder on foregoing circuit substrate 206；It is logical
Bonding metal wire 205 is crossed, connection is formed between making above-mentioned component, between above-mentioned component and foregoing circuit wiring 208；By using
The injection mould molding of thermoplastic resin or the transmission mould molding mode using thermosetting resin, by foregoing circuit component seal；Will
The redundance of above-mentioned pin 201 cuts off and forms required shape；Arrow component 209 is IGBT pipes 123 toward the side of circuit substrate 206
To sinking path；Necessary test is carried out by test equipment, test passes person just turns into above-mentioned SPM.
From Fig. 1, Fig. 2 (A) and Fig. 2 (B) it can be seen that existing SPM at least has following defect：
(1) the HVIC chips of existing SPM and 6 pairs of IGBT, FRD pipes exist together on one piece of circuit substrate, easily
It is heated, reduces performance.
(2) distributed inductance that is caused due to the structure of existing SPM, electric capacity are larger, cause switching loss very
Height, heating is very serious during existing SPM real work, so needing thick and heavy circuit substrate 206 as radiating
Device helps above-mentioned IGBT pipes and the radiating of FRD pipes.
(3) application scenario larger for power, such as drives the occasion of frequency converting air-conditioner compressor, if in foregoing circuit base
External bigger aluminium radiator on plate, increased material cost, cost of transportation and the application cost of SPM, hinder
The popularization of SPM.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art or correlation technique.
Therefore, a purpose of the present utility model is to propose a kind of preparation method of SPM.
Another purpose of the present utility model is to propose a kind of SPM.
Another purpose of the present utility model is to propose a kind of power electronic equipment.
To achieve the above object, according to the embodiment of first aspect of the present utility model, it is proposed that a kind of intelligent power mould
The preparation method of block, including：Isolation channel is formed in the positive side of substrate, substrate is divided into the first area and the secondth area of isolation
Domain；High-power component is formed on the first region, and high-power component includes MOSFET (Metal-Oxide-Semiconductor
Field Effect Transistor, mos field effect transistor), IGBT (Insulated Gate
Bipolar Translator, insulated gate gate transistors) and fast recovery diode；Low-power device is formed on the second region
Part, low power devices include high speed integral control circuit；Bonding line is formed between high-power component and low power devices.
The preparation method of the SPM according to embodiment of the present utility model, is drawn substrate by forming isolation channel
It is divided into first area and second area, to realize the isolation between high-power component and low power devices, reduces high power device
The heat that the part course of work is produced is transmitted to low power devices, and then reduces the thermal noise of low power devices and hot crosstalk, especially
It is for high speed integral control circuit this class low power devices, to be effectively improved device reliability and use the longevity
Life.
The preparation method of the SPM according to above-described embodiment of the present utility model, can also have following technology
Feature：
Preferably, also include：Half encapsulation or full bag are carried out to the substrate for forming bonding line using thermosetting resin material
Encapsulation, to form covering high-power component, low power devices and the package casing of bonding line.
The preparation method of the SPM according to embodiment of the present utility model, by forming covering high power device
The package casing of part, low power devices and bonding line, reduces interference of the electromagnetic interference to SPM, further carries
Device reliability is risen.
Preferably, also include：Before half encapsulation or total incapsulation dress is carried out, formation stretches out in the high power device of package casing
The pin of part and the pin of low power devices.
The preparation method of the SPM according to embodiment of the present utility model, by carrying out half encapsulation or complete
Before encapsulation, formation stretch out in package casing high-power component pin and the pin of low power devices, can easily by
SPM is plugged in peripheral circuit plate, is suitable to batch production.
Preferably, before formation isolation channel on substrate, also include：Metal base is cut into the sheet material of specified size；
The positive side of sheet material sequentially forms insulating barrier and patterned wiring, wherein, the most narrow spacing between isolation channel and wiring
From being 100 microns.
The preparation method of the SPM according to embodiment of the present utility model, is generally cut into table by metal base
Area is the sheet material of 44mm × 20mm, in addition, by setting the minimum range between isolation channel and wiring for 100 microns,
Influence of the isolation channel preparation technology to wiring is reduced, wiring open circuit or the possibility peeled off especially is reduction of,
Improve the reliability of wiring.
Preferably, the positive side in sheet material sequentially forms insulating barrier and patterned wiring, specifically includes following steps：
Oxide layer is formed in the positive side of sheet material using oxidation technology or depositing technics, as insulating barrier；In the designated area shape of oxide layer
Into copper clad layers；Copper clad layers are patterned with etching, to form wiring, the designated area of the wiring of first area is used
In welding high-power component, the designated area of the wiring of second area is used to weld low power devices.
The preparation method of the SPM according to embodiment of the present utility model, by the circuit for setting first area
The designated area of wiring is used to weld high-power component, and the designated area of the wiring of second area is used to weld low-power device
Part, realizes the isolation between high-power component and low power devices, reduces the heat of high-power component course of work generation
Transmitted to low power devices, and then reduce the thermal noise of low power devices and hot crosstalk, especially for the integrated control of high speed
For circuit this class low power devices, device reliability and service life are effectively improved.
Preferably, also include：Substrate to forming package casing carries out insulation voltage-withstand test, quiescent dissipation test and postpones
At least one test in time test.
The preparation method of the SPM according to embodiment of the present utility model, by the base to forming package casing
Plate carries out at least one test in insulation voltage-withstand test, quiescent dissipation test and time delay test, improves intelligent power
The reliability and yield rate of module.
According to the embodiment of second aspect of the present utility model, it is proposed that a kind of SPM, including：Substrate is just
Side is compounded with insulating barrier and wiring successively；Isolation channel, first area and second area are divided into by substrate；High power device
Part, on first area, high-power component includes MOSFET, IGBT and fast recovery diode；Low power devices, located at
On two regions, low power devices include high speed integral control circuit；Bonding line, be connected to low power devices and high-power component it
Between.
According to the SPM of embodiment of the present utility model, substrate is divided into the firstth area by forming isolation channel
Domain and second area, to realize the isolation between high-power component and low power devices, reduce the high-power component course of work
The heat of generation is transmitted to low power devices, and then reduces the thermal noise of low power devices and hot crosstalk, especially for height
For fast integral control circuit this class low power devices, device reliability and service life are effectively improved.
According to the SPM of above-described embodiment of the present utility model, there can also be following technical characteristic：
Preferably, also include：Package casing, total incapsulation is filled or half encapsulation is to cover high-power component, low power devices
With bonding line.
According to the SPM of embodiment of the present utility model, by setting covering high-power component, low-power device
The package casing of part and bonding line, reduces interference of the electromagnetic interference to SPM, and further improving device can
By property.
Preferably, also include：The pin of high-power component and the pin of low power devices, stretch out in the outer of package casing
Side.
According to the SPM of embodiment of the present utility model, by the pin and low-power that set high-power component
The pin of device, stretches out in the outside of package casing, SPM easily can be plugged in into peripheral circuit plate, is suitable to
Batch production.
Preferably, also include：Alloy-layer, located at the top layer of pin, the thickness range of alloy-layer is 0.1~10 micron.
According to the SPM of embodiment of the present utility model, alloy-layer is set by the top layer of pin, in addition,
Alloy-layer can be corroded oxidation with protection pin, improve the reliability of pin welding procedure.
Preferably, the thickness of alloy-layer is 5 microns.
Preferably, also include：Insulating barrier, is formed in the positive side of substrate, insulating barrier doped with radiating particle, and radiate particle
Shape include spherical and angle-style；Patterned wiring, is formed on insulating barrier, between isolation channel and wiring most
Small distance is 100 microns, wherein, the wiring on first area is provided with high-power component, the wiring on second area
It is provided with low power devices.
According to the SPM of embodiment of the present utility model, specified by the wiring for setting first area
Region is used to weld high-power component, and the designated area of the wiring of second area is used to weld low power devices, realizes
Isolation between high-power component and low power devices, reduces the heat of high-power component course of work generation to low-power device
Part is transmitted, and then reduces the thermal noise of low power devices and hot crosstalk, especially for this class of high speed integral control circuit
For low power devices, device reliability and service life are effectively improved.
Preferably, the line width scope of bonding line is 350~400 microns.
Preferably, the thickness of wiring is 0.0175 millimeter or 0.035 millimeter or 0.07 millimeter.
According to the embodiment of the third aspect of the present utility model, it is proposed that a kind of power electronic equipment, including as described above
SPM described in the technical scheme of two aspects.
Preferably, power electronic equipment is air-conditioner.
Additional aspect of the present utility model and advantage will be set forth in part in the description, partly by from following description
In become obvious, or by it is of the present utility model practice recognize.
Brief description of the drawings
Of the present utility model above-mentioned and/or additional aspect and advantage will from description of the accompanying drawings below to embodiment is combined
Become substantially and be readily appreciated that, wherein：
Fig. 1 shows the circuit diagram of SPM in correlation technique；
Fig. 2 (A) shows the schematic top plan view of SPM in correlation technique；
Fig. 2 (B) shows the schematic cross-sectional view of SPM in Fig. 2 (A)；
Fig. 3 (A) shows the schematic top plan view of the SPM according to embodiment of the present utility model；
Fig. 3 (B) shows the schematic cross-sectional view of the SPM of the embodiment of Fig. 3 (A)；
Fig. 4 shows showing for the embodiment one of the preparation method of the SPM according to embodiment of the present utility model
Meaning flow chart；
Fig. 5 shows showing for the embodiment two of the preparation method of the SPM according to embodiment of the present utility model
Meaning flow chart；
Fig. 6 shows the schematic diagram of the power electronic equipment according to embodiment of the present utility model.
Specific embodiment
In order to be more clearly understood that above-mentioned purpose of the present utility model, feature and advantage, below in conjunction with the accompanying drawings and tool
Body implementation method is further described in detail to the utility model.It should be noted that in the case where not conflicting, this Shen
Feature in embodiment please and embodiment can be mutually combined.
Many details are elaborated in the following description in order to fully understand the utility model, but, this practicality
It is new to be different from other modes described here using other to implement, therefore, protection domain of the present utility model is simultaneously
Do not limited by following public specific embodiment.
Fig. 3 (A) shows the schematic top plan view of the SPM according to embodiment of the present utility model.
Fig. 3 (B) shows the schematic cross-sectional view of the SPM of the embodiment of Fig. 3 (A).
The SPM according to embodiment of the present utility model is carried out specifically with reference to Fig. 3 (A) and Fig. 3 (B)
Explanation.
As shown in Fig. 3 (A) and Fig. 3 (B), the SPM 300 according to embodiment of the present utility model, including：Base
The positive side of plate is compounded with insulating barrier and wiring successively；Isolation channel 302, the area of first area 304 and second is divided into by substrate
Domain 306；High-power component, on first area 304, high-power component includes MOSFET, IGBT and fast recovery diode；
Low power devices, on second area 306, low power devices include high speed integral control circuit 312；Bonding line 314, connection
Between low power devices and high-power component.
, be divided into for substrate by forming isolation channel 302 by the SPM 300 according to embodiment of the present utility model
First area 304 and second area 306, to realize the isolation between high-power component and low power devices, reduce high power
The heat that device operation is produced is transmitted to low power devices, and then reduces the thermal noise of low power devices and hot crosstalk,
Especially for for high speed integral control circuit 312 this class low power devices, it is effectively improved device reliability and makes
Use the life-span.
Wherein, while isolation channel 302 are formed, insulating barrier is cut into the He of insulating barrier 320 of the first area of separation
The insulating barrier 322 of second area, but, wiring forms separate two parts wiring region, Ye Ji in patterning process
The wiring 316 in one region, is formed on the insulating barrier 320 of first area, and the wiring 318 in region, be formed at
On the insulating barrier 322 of second area.
As shown in Fig. 3 (A), the designated area of the wiring of first area is welded with multigroup IGBT and FRD, upper three-phase separate
Wei not an an IGBT 308A and FRD 310A, the 2nd IGBT 308B and the 2nd FRD 310B, the 3rd IGBT 308C and
Three FRD 310C, lower three-phase is respectively the 4th IGBT 308D and the 4th FRD 310D, the 5th IGBT 308E and the 5th FRD
310E, the 6th IGBT 308F and the 6th FRD 310F, HVIC 312 are welded in the designated area of the wiring of second area,
In addition, the specific effect of whole pins 328 is identical with described in background technology.
SPM 300 according to above-described embodiment of the present utility model, can also have following technical characteristic：
Preferably, also include：Package casing 324, total incapsulation is filled or half encapsulation is to cover high-power component, low-power device
Part and bonding line 314.
SPM 300 according to embodiment of the present utility model, by setting covering high-power component, low-power
The package casing 324 of device and bonding line 314, reduces interference of the electromagnetic interference to SPM 300, further carries
Device reliability is risen.
Preferably, also include：The pin of high-power component and the pin of low power devices, stretch out in package casing 324
Outside.
SPM 300 according to embodiment of the present utility model, by setting the pin of high-power component and low
The pin of power device, stretches out in the outside of package casing 324, SPM 300 easily can be plugged in into periphery
Circuit board, is suitable to batch production.
Preferably, also include：Alloy-layer, located at the top layer of pin, the thickness range of alloy-layer is 0.1~10 micron.
SPM 300 according to embodiment of the present utility model, sets alloy-layer, separately by the top layer of pin
Outward, alloy-layer can be corroded oxidation with protection pin, improve the reliability of pin welding procedure.
Preferably, the thickness of alloy-layer is 5 microns.
Preferably, also include：Insulating barrier, is formed in the positive side of substrate, insulating barrier doped with radiating particle, and radiate particle
Shape include spherical and angle-style；Patterned wiring, is formed on insulating barrier, between isolation channel 302 and wiring
Minimum range be 100 microns, wherein, the wiring on first area 304 is provided with high-power component, on second area 306
Wiring be provided with low power devices.
SPM 300 according to embodiment of the present utility model, by the wiring for setting first area 304
Designated area be used to weld high-power component, the designated area of the wiring of second area 306 is used to weld low-power device
Part, realizes the isolation between high-power component and low power devices, reduces the heat of high-power component course of work generation
Transmitted to low power devices, and then reduce the thermal noise of low power devices and hot crosstalk, especially for the integrated control of high speed
For circuit 312 this class low power devices, device reliability and service life are effectively improved.
Preferably, the line width scope of bonding line 314 is 350~400 microns.
Preferably, the thickness of wiring is 0.0175 millimeter or 0.035 millimeter or 0.07 millimeter.
Fig. 4 shows showing for the embodiment one of the preparation method of the SPM according to embodiment of the present utility model
Meaning flow chart.
Fig. 5 shows showing for the embodiment two of the preparation method of the SPM according to embodiment of the present utility model
Meaning flow chart.
The preparation method of the SPM according to embodiment of the present utility model is carried out with reference to Fig. 4 and Fig. 5
Illustrate.
Embodiment one：
As shown in figure 4, the preparation method of the SPM according to embodiment of the present utility model, including：Step
402, isolation channel is formed in the positive side of substrate, substrate is divided into first area and the second area of isolation；Step 404,
High-power component is formed on first area, high-power component includes MOSFET (Metal-Oxide-Semiconductor Field
Effect Transistor, mos field effect transistor), IGBT (Insulated Gate Bipolar
Translator, insulated gate gate transistors) and fast recovery diode；Step 406, forms low-power device on the second region
Part, low power devices include high speed integral control circuit；Step 408, forms nation between high-power component and low power devices
Alignment.
The preparation method of the SPM according to embodiment of the present utility model, is drawn substrate by forming isolation channel
It is divided into first area and second area, to realize the isolation between high-power component and low power devices, reduces high power device
The heat that the part course of work is produced is transmitted to low power devices, and then reduces the thermal noise of low power devices and hot crosstalk, especially
It is for high speed integral control circuit this class low power devices, to be effectively improved device reliability and use the longevity
Life.
The preparation method of the SPM according to above-described embodiment of the present utility model, can also have following technology
Feature：
Preferably, also include：Half encapsulation or full bag are carried out to the substrate for forming bonding line using thermosetting resin material
Encapsulation, to form covering high-power component, low power devices and the package casing of bonding line.
The preparation method of the SPM according to embodiment of the present utility model, by forming covering high power device
The package casing of part, low power devices and bonding line, reduces interference of the electromagnetic interference to SPM, further carries
Device reliability is risen.
Preferably, also include：Before half encapsulation or total incapsulation dress is carried out, formation stretches out in the high power device of package casing
The pin of part and the pin of low power devices.
The preparation method of the SPM according to embodiment of the present utility model, by carrying out half encapsulation or complete
Before encapsulation, formation stretch out in package casing high-power component pin and the pin of low power devices, can easily by
SPM is plugged in peripheral circuit plate, is suitable to batch production.
Preferably, before formation isolation channel on substrate, also include：Metal base is cut into the sheet material of specified size；
The positive side of sheet material sequentially forms insulating barrier and patterned wiring, wherein, the most narrow spacing between isolation channel and wiring
From being 100 microns.
The preparation method of the SPM according to embodiment of the present utility model, is generally cut into table by metal base
Area is the sheet material of 44mm × 20mm, in addition, by setting the minimum range between isolation channel and wiring for 100 microns,
Influence of the isolation channel preparation technology to wiring is reduced, wiring open circuit or the possibility peeled off especially is reduction of,
Improve the reliability of wiring.
Preferably, the positive side in sheet material sequentially forms insulating barrier and patterned wiring, specifically includes following steps：
Oxide layer is formed in the positive side of sheet material using oxidation technology or depositing technics, as insulating barrier；In the designated area shape of oxide layer
Into copper clad layers；Copper clad layers are patterned with etching, to form wiring, the designated area of the wiring of first area is used
In welding high-power component, the designated area of the wiring of second area is used to weld low power devices.
The preparation method of the SPM according to embodiment of the present utility model, by the circuit for setting first area
The designated area of wiring is used to weld high-power component, and the designated area of the wiring of second area is used to weld low-power device
Part, realizes the isolation between high-power component and low power devices, reduces the heat of high-power component course of work generation
Transmitted to low power devices, and then reduce the thermal noise of low power devices and hot crosstalk, especially for the integrated control of high speed
For circuit this class low power devices, device reliability and service life are effectively improved.
Preferably, also include：Substrate to forming package casing carries out insulation voltage-withstand test, quiescent dissipation test and postpones
At least one test in time test.
The preparation method of the SPM according to embodiment of the present utility model, by the base to forming package casing
Plate carries out at least one test in insulation voltage-withstand test, quiescent dissipation test and time delay test, improves intelligent power
The reliability and yield rate of module.
Embodiment two：
As shown in figure 5, the preparation method of the SPM according to embodiment of the present utility model, including：Step
502, substrate is suppressed and etching technics, substrate is slotted, isolation channel is formed, to be divided into load region and control zone；Step
Rapid 504, HVIC is mounted on control zone, IGBT and FRD are attached to load region；Step 506, installs pin, and form circuit
Metal connecting line between element and wiring；Step 508, half encapsulating or total incapsulation are carried out using resin seal material；Step 510,
Carry out solidify afterwards, burr removing and Trim Molding operation.
Fig. 6 shows the schematic diagram of the power electronic equipment according to embodiment of the present utility model.
As shown in fig. 6, the power electronic equipment 600 according to embodiment of the present utility model, including such as above-mentioned Fig. 3 (A) and
SPM 300 shown in Fig. 3 (B).
Preferably, power electronic equipment 600 is air-conditioner.
The technical solution of the utility model is described in detail above in association with accompanying drawing, it is contemplated that the intelligence proposed in correlation technique
The thermal stability problems of power model, the utility model proposes a kind of preparation method of SPM, intelligent power mould
Block and power electronic equipment, first area and second area are divided into by forming isolation channel by substrate, to realize high power device
Isolation between part and low power devices, the heat for reducing the generation of the high-power component course of work is transmitted to low power devices,
And then the thermal noise of low power devices and hot crosstalk are reduced, especially for this class low-power device of high speed integral control circuit
For part, device reliability and service life are effectively improved.
Preferred embodiment of the present utility model is the foregoing is only, the utility model is not limited to, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all it is of the present utility model spirit and principle
Within, any modification, equivalent substitution and improvements made etc. should be included within protection domain of the present utility model.
Claims (10)
1. a kind of SPM, it is characterised in that including：
The positive side of substrate is compounded with insulating barrier and wiring successively；
Isolation channel, first area and second area are divided into by the substrate；
High-power component, on the first area, the high-power component includes MOSFET, IGBT and the pole of fast quick-recovery two
Pipe；
Low power devices, on the second area, the low power devices include high speed integral control circuit；
Bonding line, is connected between the low power devices and the high-power component.
2. SPM according to claim 1, it is characterised in that also include：
Package casing, total incapsulation is filled or half encapsulation is to cover the high-power component, the low power devices and the bonding
Line.
3. SPM according to claim 2, it is characterised in that also include：
The pin of high-power component and the pin of low power devices, stretch out in the outside of the package casing.
4. SPM according to claim 3, it is characterised in that also include：
Alloy-layer, located at the top layer of the pin, the thickness range of the alloy-layer is 0.1~10 micron.
5. SPM according to claim 4, it is characterised in that
The thickness of the alloy-layer is 5 microns.
6. SPM according to claim 1, it is characterised in that also include：
Insulating barrier, is formed in the positive side of the substrate, the insulating barrier doped with radiating particle, the shape of the radiating particle
Including spherical and angle-style；
Patterned wiring, is formed on the insulating barrier, the most narrow spacing between the isolation channel and the wiring
From being 100 microns,
Wherein, the wiring on the first area is provided with high-power component, and the wiring on the second area is provided with
Low power devices.
7. SPM according to any one of claim 1 to 6, it is characterised in that
The line width scope of the bonding line is 350~400 microns.
8. SPM according to any one of claim 1 to 6, it is characterised in that
The thickness of the wiring is 0.0175 millimeter or 0.035 millimeter or 0.07 millimeter.
9. a kind of power electronic equipment, it is characterised in that including the intelligent power mould as any one of claim 1 to 8
Block.
10. power electronic equipment according to claim 9, it is characterised in that
The power electronic equipment is air-conditioner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621285506.2U CN206282824U (en) | 2016-11-28 | 2016-11-28 | SPM and power electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621285506.2U CN206282824U (en) | 2016-11-28 | 2016-11-28 | SPM and power electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206282824U true CN206282824U (en) | 2017-06-27 |
Family
ID=59074355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621285506.2U Expired - Fee Related CN206282824U (en) | 2016-11-28 | 2016-11-28 | SPM and power electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206282824U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684002A (en) * | 2016-11-28 | 2017-05-17 | 广东美的制冷设备有限公司 | Intelligent power module and preparation method therefor, and power electronic equipment |
| CN107195433A (en) * | 2017-06-30 | 2017-09-22 | 广东美的制冷设备有限公司 | The Inductive component and air conditioner of air conditioner |
-
2016
- 2016-11-28 CN CN201621285506.2U patent/CN206282824U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684002A (en) * | 2016-11-28 | 2017-05-17 | 广东美的制冷设备有限公司 | Intelligent power module and preparation method therefor, and power electronic equipment |
| CN107195433A (en) * | 2017-06-30 | 2017-09-22 | 广东美的制冷设备有限公司 | The Inductive component and air conditioner of air conditioner |
| CN107195433B (en) * | 2017-06-30 | 2024-04-23 | 广东美的制冷设备有限公司 | Inductance assembly of air conditioner and air conditioner |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
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Granted publication date: 20170627 |