CN206274508U - The system for integrating ald and reactive ion etching - Google Patents
The system for integrating ald and reactive ion etching Download PDFInfo
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- CN206274508U CN206274508U CN201621051978.1U CN201621051978U CN206274508U CN 206274508 U CN206274508 U CN 206274508U CN 201621051978 U CN201621051978 U CN 201621051978U CN 206274508 U CN206274508 U CN 206274508U
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- ald
- reactive ion
- sample
- reaction cavity
- ion etching
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Abstract
The utility model provides a kind of system for integrating ald and reactive ion etching, it includes a reaction unit and a sample mobile device, one second reaction cavity that reaction unit is connected with each other comprising one first reaction cavity and with first reaction cavity, and sample mobile device is arranged in the reaction unit, the control that one kind of product pass through the sample mobile device, carries out ald or is moved in second reaction cavity to carry out reactive ion etching to be moved in first reaction cavity.The utility model can effectively save manufacturing time, and equipment cost is greatly reduced by combining system and the system for carrying out reactive ion etching technology for carrying out technique for atomic layer deposition.
Description
Technical field
The utility model is related to a kind of semi-conductor manufacturing system, it is espespecially a kind of integrate ald and reactivity from
The system of son etching.
Background technology
Ald (Atomic Layer Deposition, ALD) be in semiconductor industry common manufacturing technology it
One, it is related in a pulsed fashion alternately be passed through gas phase predecessor in reaction cavity, and by predecessor in sample surfaces
Saturation chemical absorbing (Saturated Chemisorption) and self limitation (Self-limiting) chemical reaction and
By atom stacked in multi-layers, deposition and the growth of film are carried out.In addition, technique for atomic layer deposition can also be entered by the auxiliary of plasma-based
Row plasma-based formula ald (Plasma Enhanced Atomic Layer Deposition), it can be promoted using plasma-based
Make the predecessor reaction generation film that sample surfaces are adsorbed.The advantage of ald is that the film made by it has excellent
Different uniform fold rate and compliance.
Another common technique is reactive ion etch (Reactive Ion Etching, RIE) in semiconductor industry
Technology.Reactive ion etch is included in reaction chamber and is passed through specific manufacture gas, and manufacture gas is converted into plasma-based
(for example, the applied voltage between two electrode plates, or plasma-based is produced using electromagnetic induction), and by plasma-based to sample surfaces
It is etched.Specifically, reactive ion etch is simultaneously comprising physical (Physical) and chemically (Chemical)
Etching：Physical etching refers to that electrically charged ion in plasma-based is influenceed and accelerated by the potential difference produced by battery lead plate with electronics
The sample surfaces such as film or wafer are clashed into, and the atom of sample surfaces is hit；And chemically etching is incited somebody to action by plasma-based
Etching gas is dissociated into various ions, and then produces chemical reaction to samples such as film or wafers.Due to reactive ion etch
Physical etching and the advantage for chemically etching are combined, it is the main flow of etch process in industrial circle.
The step of ald and reactive ion etch all required for semiconductor manufacturing, and existing plasma-based formula is former
It is two sets of systems of independent operating that sublayer deposits (PEALD) coating system with reactive ion etch system, if being needed in manufacture
Intersection carries out two kinds of technologies, and sample need to be shifted between two systems.Consequently, it is possible to not only consume manufacturing time, it is easier to
There is damage and surface contamination when sample is shifted.Furthermore, while purchasing two sets of independent systems can increase equipment cost and maintenance
Cost.
Therefore, it is in need that a kind of manufacture of semiconductor for integrating technique for atomic layer deposition and reactive ion etch technology is provided
System, avoids sample from shifting caused pollution and equipment cost is greatly reduced whereby.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of integration atomic layer in view of the shortcomings of the prior art
The system of deposition and reactive ion etching, it can reach two kinds of integration traditionally independent fortune by special structure design
Capable system simultaneously avoids shortcoming in manufacture and reduces the purpose of production cost.
The utility model wherein embodiment provides a kind of system for integrating ald and reactive ion etching,
Wherein, the system of the integration ald and reactive ion etching includes a reaction unit and sample movement dress
Put.One second reaction chamber that the reaction unit is connected with each other comprising one first reaction cavity and with first reaction cavity
Body.The sample mobile device is arranged in the reaction unit, the control that one kind of product pass through the sample mobile device,
Carry out ald or be moved in second reaction cavity to be reacted to be moved in first reaction cavity
Property ion(ic) etching.
Preferably, the sample mobile device comprising be used to carry a plummer of the sample and with the plummer
The travel mechanism being connected.
Preferably, when the sample is by the control of the sample mobile device, to be moved to first reaction cavity
When inside carrying out ald, the plummer for carrying the sample is located in first reaction cavity, and described the
One reaction cavity is interconnected with second reaction cavity；When the sample is by the control of the sample mobile device, with
It is moved to when carrying out reactive ion etching in second reaction cavity, the plummer for carrying the sample is located at institute
State in the second reaction cavity, and the plummer mutually completely cuts off first reaction cavity and second reaction cavity and mutual
Do not connect.
Preferably, the reaction unit is also comprising first air inlet pipeline and for being communicated to first reaction cavity
The second air inlet pipeline of second reaction cavity is communicated to, an ald gas is by first air inlet pipeline with defeated
Enter to first reaction cavity, and a reactive ion etching gas by second air inlet pipeline being input into described the
Two reaction cavities.
Preferably, the reaction unit has the plasma-based generator of an outside for being arranged on second reaction cavity, with
For the reactive ion etching gas to be converted into a plasma-based when reactive ion etching is carried out, or carrying out atom
Plasma-based assisted atomic layer deposition is further carried out during layer deposition.
Preferably, the reaction unit is also arranged on heater in first reaction cavity comprising one, for
The sample is heated when carrying out ald.
Preferably, the sample mobile device also includes a cooling line, for when reactive ion etching is carried out
The sample is cooled down.
Preferably, the sample mobile device also includes a rf bias cable, is penetrated for being applied to the sample one
Frequency power or a bias.
Preferably, the reaction unit also includes a gas exhaust piping, for controlling the reaction chamber of reaction unit first
The internal pressure of body and second reaction cavity.
Preferably, the reaction unit also includes a local heater, for carrying out the atomic layer chemical deposition
Or local heating is carried out to the sample before the reactive ion etching.
Preferably, the local heater produces a focus type electron beam or a laser, and part is carried out with to the sample
Heating.
The beneficial effects of the utility model are the integration ald that the utility model embodiment is provided and anti-
The system of answering property ion(ic) etching, can be by the way that " the sample mobile device is arranged in the reaction unit, and one kind of product pass through
The control of the sample mobile device, carries out ald or is moved to described to be moved in first reaction cavity
Reactive ion etching is carried out in second reaction cavity " structure design, and reach carries out atom inside same reaction device
Layer deposition and reactive ion etching effect, avoid whereby sample shifted between differential responses system caused by pollution and
Loss, can also be greatly reduced equipment cost.
Feature of the present utility model and technology contents are further understood that to enable, are referred to below in connection with the utility model
Detailed description and accompanying drawing, but the accompanying drawing for being provided be merely provided for referring to explanation, not for adding to the utility model
To limit.
Brief description of the drawings
Fig. 1 integrates the system of ald and reactive ion etching in the first shape for the utility model embodiment
Generalized section under state；And
Fig. 2 is that the utility model integrates ald and reactive ion etching for the utility model embodiment
System generalized section in the second condition.
Fig. 3 is the another kind of the system for integrating ald and reactive ion etching of the utility model embodiment
Implementation method.
Fig. 4 is yet another for the system for integrating ald and reactive ion etching of the utility model embodiment
Plant implementation method.
Specific embodiment
The following is illustrated by specific instantiation disclosed by the utility model it is relevant " integrate ald and
The implementation method of the system of reactive ion etching ", the content that those skilled in the art can be proposed by this specification understands this
The advantage and technique effect of utility model.The utility model can be implemented or applied by other different specific embodiments,
The various details in this specification may be based on different viewpoints and application, be carried out in the case where spirit of the present utility model is not departed from various
Modification and change.In addition, schema of the present utility model is only simple schematically illustrate, not according to the description of actual size, first gives and chatting
It is bright.Following implementation method will be explained in further detail correlation technique content of the present utility model, but the content for being proposed is not
It is used to limit technology category of the present utility model.
Refer to shown in Fig. 1 and Fig. 2.Integration alds and reaction of the Fig. 1 and Fig. 2 for the utility model embodiment
Generalized section of the system of property ion(ic) etching under different conditions.It is provided by the utility model integration ald and
The system S of reactive ion etching includes reaction unit 1 and sample mobile device 2.Sample mobile device 2 is arranged at reaction dress
Put in 1, and be electrically connected with outside control device (not shown).
Specifically, reaction unit 1 includes the first reaction cavity 11 and the second reaction cavity 12, the first reaction cavity 11
It is connected with each other with the second reaction cavity 12.For example, the first reaction cavity 11 and the second reaction cavity 12 are the true of cylindrical type
Cavity body.However, the utility model system not subject to the limits.In embodiment of the present utility model, the first reaction cavity 11 and second
Reaction cavity 12 is mutually socketed, i.e. a part for the second reaction cavity 12 is located in the first reaction cavity 11.Such as Fig. 1 and Fig. 2 institutes
Show, the first reaction cavity 11 is located at the bottom of reaction unit 1, and the second reaction cavity 12 is located at the top of reaction unit 1.
Hold above-mentioned, the second reaction cavity 12 includes a main part 121 and a cavity hatch 122.In the utility model,
A part and cavity hatch 122 for the main part 121 of the second reaction cavity 12 is located in the first reaction cavity 11.Cavity hatch
122 shape system not subject to the limits.In the utility model embodiment, cavity hatch 122 is a circular opening, and with an internal diameter
d1.In embodiment of the present utility model, the internal diameter d2s of the internal diameter d1 more than main part 121 of cavity hatch 122.In such as Fig. 1 institutes
Under the first state shown, the first reaction cavity 11 and the second reaction cavity 12 are interconnected by cavity hatch 122.Cavity is opened
The functions that mouth 122 is played under the second state as shown in Figure 2 are described after a while.
Sample mobile device 2 is arranged in reaction unit 1, is used to control sample 21 to be moved in the first reaction cavity 11
Row ald or it is moved in the second reaction cavity 12 and carries out reactive ion etching.Fig. 1 and Fig. 2 show integration respectively
The system S of ald and reactive ion etching is carrying out the state of ald, and carries out reactive ion
The state of etching.In other words, in Fig. 1, sample 21 is moved in the first reaction cavity 11 and carries out ald, and in figure
In 2, sample 21 is moved in the second reaction cavity 12 and carries out reactive ion etching.
For example, sample 21 can be semiconductor base material, the base material for for example being formed by silicon.Sample mobile device 2 is wrapped
The travel mechanism 23 being connected containing the plummer 22 for being used to carry sample 21 and with plummer 22.In other words, sample movement
The travel mechanism 23 of device 2 can control the plummer 22 to carry out the movement (that is, being lifted) of Z axis.In addition, in the utility model
In, plummer 22 be a disk, and the cavity hatch 122 of the diameter d3 of plummer 22 and the second reaction cavity 12 internal diameter d1 realities
It is identical in matter so that when plummer 22 is risen in the second reaction cavity 12 by travel mechanism 23, the second reaction to be sticked in
In the cavity hatch 122 of cavity 12, the effect of the first reaction cavity 11 of isolation and the second reaction cavity 12 is reached.
Fig. 1 and Fig. 2 is please equally referred to, reaction unit 1 is also comprising the first air inlet pipeline for being communicated to the first reaction cavity 11
13 and it is communicated to the second air inlet pipeline 14 of the second reaction cavity 12.For example, as shown in figure 1, the first air inlet pipeline 13
The first reaction cavity 11 can be directly communicated to, be used to make an ald gas to pass through the first air inlet pipeline 13 be input into
First reaction cavity 11.Or, in other examples, the first air inlet pipeline 13 can be arranged at the second reaction cavity 12
At cavity hatch 122 so that the ald gas being input into by the first air inlet pipeline 13 is by the chamber of the second reaction cavity 12
Body opening 122 enters the first reaction cavity 11.Under this set-up mode, the gas being input into by the first air inlet pipeline 13 can pass through
Selectivity is arranged at the concrete dynamic modulus net (not shown) of the top of cavity hatch 122 of the second reaction cavity 12 so that gas can be equal
On even distribution to the surface of sample 21.Second air inlet pipeline 14 is connected to the top of the second reaction cavity 12, is used to make a reaction
Property ion(ic) etching gas by the second air inlet pipeline 14 being input into the second reaction cavity 12.The setting position of the second air inlet pipeline 14
Putting can be adjusted according to experiment demand.In the embodiment shown by Fig. 1 and Fig. 2, the second air inlet pipeline 14 is to be connected to
The top of the main part 121 of the second reaction cavity 12.
It is noted that in the utility model, the first air inlet pipeline 13 and the second air inlet pipeline 14 and non-concurrent
It is input into inside ald gas and reactive ion etching gas to reaction unit 1 respectively.In other words, by
When one reaction cavity 11 carries out ald, just need to be input into ald gas by the first air inlet pipeline 13；And
When carrying out reactive ion etching by the second reaction cavity 12, just need to be input into reactive ion by the second air inlet pipeline 14
Etching gas.
In addition, the ald and the system S of reactive ion etching integrated provided by the utility model also includes
Gas exhaust piping 17, for controlling the first reaction cavity 11 of reaction unit 1 and the internal pressure of the second reaction cavity 12.Row
Air pipe 17 is arranged at the bottom of reaction unit 1, i.e. the lower end of the first reaction cavity 11 of reaction unit 1.For example, arrange
Air pipe 17 is connected to a vavuum pump, the place for being vacuumized to the first reaction cavity 11 and/or the second reaction cavity 12 whereby
Reason step.
Please coordinate shown in Fig. 1 and Fig. 2.Next will be further illustrated using integration atomic layer provided by the utility model
The system S of deposition and reactive ion etching carries out the process step of ald and reactive ion etching respectively.
First, Fig. 1 is referred to.Fig. 1 displays are using integration ald and reactivity provided by the utility model
The system S of ion(ic) etching carries out the state of ald.When the control that sample 21 passes through sample mobile device 2, to be moved to
When carrying out ald in the first reaction cavity 11, the plummer 22 for carrying sample 21 is located in the first reaction cavity 11,
And first reaction cavity 11 and the second reaction cavity 12 be interconnected.
First reaction cavity 11 of reaction unit 1 is the reaction cavity for carrying out ald.As it was previously stated, can lead to
The first air inlet pipeline 13 for being communicated to the first reaction cavity 11 is crossed, is used to make an ald gas be input into the first reaction chamber
Body 11.Ald gas is the predecessor of ald.For example, by ald come deposited oxide
During zinc (ZnO) layer, ald gas can include thing containing zinc precursor and oxygen-containing predecessor.Thing containing zinc precursor can be included, for example,
Zinc ethide ((C2H5)2) or dimethyl zinc ((CH Zn3)2Zn), oxygen-containing predecessor can include water (H2O), ozone (O3) and oxygen
(O2).However, the species of ald gas can be selected according to manufacture demand, the utility model is not any limitation as.
Due to reaction mechanism and the temperature of ald have it is close associate, when ald is carried out, it is necessary to essence
True controlling reaction temperature.Accordingly, it is anti-in the system S for integrating ald and reactive ion etching of the present utility model
Device 1 is answered to include the heater 16 for being arranged on the first reaction cavity 11, for adding to sample 21 when ald is carried out
Heat.For example, the heater 16 that the utility model is used can be laser, electron beam source or x-ray source.In addition, lifting
It is further setting office in the system S for integrating ald and reactive ion etching shown by Fig. 4 for example
Portion's heater 18, such as focus type laser or focus type electron gun are used as source of auxiliary heat.
However, the utility model system not subject to the limits.Heater is directly arranged at carrying sample with conventionally manufactured equipment
Unlike 21 inside of plummer 22, the utility model is that heater 16 is arranged inside the first reaction cavity 11 in addition.
Hold above-mentioned, in other words, in system of the present utility model, heater 16 is to be provided separately with plummer 22.This
It is because system of the present utility model is to control the position of sample 21 (that is, to make sample by moving up and down for sample mobile device 2
Grade is in the first reaction cavity 11 or the second reaction cavity 12), therefore, if heater 16 is built into plummer 22
Portion, when sample 21 is moved into by sample mobile device 2 carries out reactive ion etching in second reaction cavity 12, plus
Hot device 16 will be subject to the corrosion of reactive ion etching gas and cause to damage.
In addition, reaction unit 1 can also have the plasma-based generator 15 of the outside for being arranged on the second reaction cavity 12, with
For carrying out plasma-based assisted atomic layer deposition (Plasma Enhanced Atomic Layer Deposition, PEALD).Electricity
Slurry generator 15 can include the multiple coils around the second reaction cavity 12, and the power source being electrically connected with coil is (not
It has been shown that, such as radio frequency (RF) generator).Plasma-based generator 15 is used to form plasma-based region of discharge in the second reaction cavity 12, and
By controlling to apply to control the plasma-based density and ionic flux (Ion flux) inside reaction unit 1 to the energy of coil.
In addition, as shown in figure 3, in integration ald provided by the utility model and reactive ion etching
In the another embodiment of system S, reaction unit 1 can produce plasma-based by a hole net 123, carry out whereby reaction equation from
Son etching.Hole net 123 is a metal plate with Micro-v oid, for example, being a flat aluminium alloy plate.
As it was previously stated, the control for passing through sample mobile device 2 in sample 21, is carried out with being moved in the first reaction cavity 11
During ald, the plummer 22 for carrying sample 21 is located in the first reaction cavity 11, and the first reaction cavity 11 and the
Two reaction cavities 12 are interconnected.Therefore, it is input into inside ald gas to reaction unit 1 by the first air inlet pipeline 13
When, ald gas can enter in second reaction cavity 12 on the top of reaction unit 1.Consequently, it is possible to be arranged on second
The plasma-based generator 15 of the outside of reaction cavity 12 can form plasma-based region of discharge in the second reaction cavity 12, and then provide electricity
Plasma-based needed for slurry assisted atomic layer deposition manufacture.
In sum, when ald is carried out, can be put by the plasma-based formed in the second reaction cavity 12 simultaneously
Electric area produces plasma-based, and in carrying out the ald on the surface of sample 21 in the first reaction cavity 11.Carrying out the table of sample 21
During the ald in face, by the heater 16 in the first reaction cavity 11, can be with the reaction temperature of precise control sample 21.
In addition, during ald is carried out, nitrogen or inert gas (such as argon gas) can be used to the first air inlet pipeline 13
(Purge) is rinsed, to avoid different ald gas interactive interferences.
Then, Fig. 2 is referred to.Fig. 2 displays are using integration ald and reactivity provided by the utility model
The system S of ion(ic) etching carries out the state of reactive ion etching.When the control that sample 21 passes through sample mobile device 2, to move
Move when carrying out reactive ion etching to the second reaction cavity 12, the plummer 22 for carrying sample 21 is located at the second reaction chamber
In body 12, and the body of the first reaction chamber 11 is mutually completely cut off and not connected mutually by plummer 22 with the second reaction cavity 12.
As shown in Fig. 2 when the plummer 22 for carrying sample 21 was thrown the travel mechanism 23 of sample mobile device 2 and moved
When in the second reaction cavity 12, plummer 22 can just meet (fit) in the cavity hatch 122 of the second reaction cavity 12.Such as
Preceding described, the internal diameter d1 of the cavity hatch 122 of the second reaction cavity 12 is identical with the diameter d3 of plummer 22, therefore, carrying out
During reactive ion etching, plummer 22 may be used to the first reaction cavity 11 and the second mutually isolation of reaction cavity 12.So
One, the reactive ion etching gas for carrying out reactive ion etching may not flow into the inside of the first reaction cavity 11 and damage
Heater 16 in the first reaction cavity 11 of evil.
Depending on the species of reactive ion etching gas is according to the etch process for forming the material of sample 21 and being carried out.
For example, when sample 21 is silicon substrate, reactive ion etching gas can be the gas based on fluorine, such as sulfur hexafluoride,
Carbon tetrafluoride (CF4), fluoroform (CHF3), perfluoroethane (C2F6) and octafluoropropane (C3F8) etc..
Hold above-mentioned, when sample 21 is located in the second reaction cavity 12, can be by being arranged at outside the second reaction cavity 12
Plasma-based generator 15 produce plasma-based region of discharge.For example, RF energy magnetic field (RF can be produced by plasma-based generator 15
Powered magnetic field) produce highdensity plasma-based.However, the etching outline formed by aforesaid way is more etc.
Tropism (Isotropic), sample mobile device 2 of the present utility model also includes rf bias cable 25, for being applied to sample
The radio-frequency power supply of product 22 1 or a bias.Rf bias cable 25 can also apply in addition to being used to carry out sample insulation by sample 1
Directionality (Directional) electric field, to reach the etching outline of more anisotropy (Anisotropic).
Equally refering to shown in Fig. 2, sample mobile device 2 of the present utility model also includes cooling line 24, for carrying out
Sample 21 is cooled down during reactive ion etching.Specifically, cooling line 24 can be passed through the cooling water of circulation, or
Being filled with the gases such as helium reduces the temperature of sample 21 to help.If it is noted that when reactive ion etching is carried out with cold
But water carries out the cooling of sample 21, it is necessary to be additionally provided with discharging valve, to discharge cooling line 24 when ald is carried out
Interior cooling water.
In sum, when reactive ion etching is carried out, can be anti-by first by carrying the plummer 22 of sample 21
The mutually isolation of reaction cavity 12 of cavity 11 and second is answered, and in the interior etching work for carrying out the surface of sample 21 of the second reaction cavity 12
Skill.Consequently, it is possible to the heater 16 being arranged in the first reaction cavity 11 can be avoided to be subject to the corruption of reactive ion etching gas
Erosion.In addition, when the etch process on the surface of sample 21 is carried out, by the cooling line 24 in sample mobile device 2, can control
The reaction temperature of sample 21.
In addition, the system S for integrating ald and reactive ion etching provided by the utility model is also
Comprising local heater 18, for before atomic layer chemical deposition or reactive ion etching is carried out, to the sample
Carry out local heating.In general, in traditional technique, in order to make pattern, it is necessary in others on the surface of sample 21
Sample 21 is patterned in advance in equipment, and after the completion of follow-up coating process, then the materials such as the photoresist of pattern will be formed
Material is removed.Accordingly, various different patterns are if desired made on sample 21, or is patterned in the new film layer for being formed, all
Outside having to sample removal reaction cavity, and re-start the shielding processing of pattern.Consequently, it is possible to manufacturing step is more numerous
It is multiple, and the risk of manufacturing time and specimen breakdown is increased simultaneously.
Therefore, to solve the above problems, it is of the present utility model integrate ald and reactive ion etching be
The local heater 18 that system S is included can use focus type electron beam or laser, and the precalculated position to pattern to be produced is entered
Row local heating.Fig. 4 is referred to, local heater 18 is a focus type laser or focus type electron gun, and it is former that it is arranged at integration
The top of the system S of sublayer deposition and reactive ion etching.Consequently, it is possible to pass through local heater 18, can be by system
During making, the temperature only allowed required for reaching manufacture through the precalculated position of local heating, and then the growth of film is carried out, or enter
Row etch process.Accordingly, the effect of selective plating or etching can be reached.
The beneficial effects of the utility model
In sum, the beneficial effects of the utility model can be that the integration that the utility model embodiment is provided is former
The system S of sublayer deposition and reactive ion etching, it can be by the way that " sample mobile device 2, it is arranged on the reaction unit
In 1, the control that a sample 21 passes through the sample mobile device 2 carries out atom to be moved in first reaction cavity 11
Layer deposition or be moved in second reaction cavity 12 carry out reactive ion etching " structure design, with same
The technique for carrying out ald and reactive ion etching respectively in reaction unit 1.
Specifically, the utility model embodiment is provided integration ald and reactive ion etching are
System S except by sample mobile device 2 come mobile example to appropriate response location in addition to, moved by reaction unit 1 and sample
The particular design of each component of dynamic device 2, can be when ald be carried out simultaneously using the electricity outside the second reaction cavity 12
Starch generator 15 to produce plasma-based region of discharge, to carry out plasma-based assisted atomic layer deposition technique.And carrying out reaction equation ion erosion
During quarter, by the way that the first reaction cavity 11 is mutually isolated with the second reaction cavity 12, can avoid being arranged at the first reaction cavity
Heater 16 in 11 is by reactive ion etch gas pickling.
Finally, the ald and the system S of reactive ion etching integrated of the present utility model can also include part
Heater 18, reaches the technique effect of selective plating or etching whereby.
Content disclosed above is only preferred possible embodiments of the present utility model, not thereby limits to the utility model
Scope of the claims, therefore all utilization the utility model specifications and accompanying drawing content done equivalence techniques change,
It is contained in scope of the claims of the present utility model.
Claims (12)
1. a kind of system for integrating ald and reactive ion etching, it is characterised in that the integration atomic layer deposition
The system of product and reactive ion etching is included：
One reaction unit, one second reaction chamber being connected with each other comprising one first reaction cavity and with first reaction cavity
Body；And
One sample mobile device, is arranged in the reaction unit, wherein, the control that a sample passes through the sample mobile device
System, carries out ald or is moved in second reaction cavity to carry out instead to be moved in first reaction cavity
The ion(ic) etching of answering property.
2. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that institute
State sample mobile device and include and be used to carry a plummer of the sample and the moving machine being connected with the plummer
Structure.
3. the system for integrating ald and reactive ion etching according to claim 2, it is characterised in that when
The control that the sample passes through the sample mobile device, ald is carried out to be moved in first reaction cavity
When, carry the sample the plummer be located at first reaction cavity in, and first reaction cavity with it is described
Second reaction cavity is interconnected.
4. the system for integrating ald and reactive ion etching according to claim 2, it is characterised in that when
The control that the sample passes through the sample mobile device, reactive ion erosion is carried out to be moved in second reaction cavity
During quarter, the plummer for carrying the sample is located in second reaction cavity, and the plummer is by described first
Reaction cavity mutually completely cuts off with second reaction cavity and does not connect mutually.
5. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that institute
Stating reaction unit, to be also communicated to described second comprising first air inlet pipeline for being communicated to first reaction cavity and one anti-
The second air inlet pipeline of cavity, an ald gas is answered to be reacted to be input into described first by first air inlet pipeline
Cavity, and a reactive ion etching gas by second air inlet pipeline being input into second reaction cavity.
6. the system for integrating ald and reactive ion etching according to claim 5, it is characterised in that institute
State reaction unit with one be arranged on second reaction cavity outside plasma-based generator, for carry out reactivity from
The reactive ion etching gas is converted into a plasma-based during son etching, or for further when ald is carried out
Carry out plasma-based assisted atomic layer deposition.
7. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that institute
State reaction unit and be also arranged on heater in first reaction cavity comprising one, for when ald is carried out pair
The sample is heated.
8. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that institute
Sample mobile device is stated also comprising a cooling line, it is cold for being carried out to the sample when reactive ion etching is carried out
But.
9. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that institute
Sample mobile device is stated also comprising a rf bias cable, for being applied to the radio-frequency power supply of the sample one or a bias.
10. the system for integrating ald and reactive ion etching according to claim 1, it is characterised in that
The reaction unit also includes a gas exhaust piping, for controlling first reaction cavity of the reaction unit and described
The internal pressure of the second reaction cavity.
11. systems for integrating ald and reactive ion etching according to claim 1, it is characterised in that
The reaction unit also include a local heater, for carry out the atomic layer chemical deposition or it is described reactivity from
Local heating is carried out to the sample before son etching.
12. systems for integrating ald and reactive ion etching according to claim 11, it is characterised in that
The local heater produces a focus type electron beam or a laser, and local heating is carried out with to the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621051978.1U CN206274508U (en) | 2016-09-13 | 2016-09-13 | The system for integrating ald and reactive ion etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621051978.1U CN206274508U (en) | 2016-09-13 | 2016-09-13 | The system for integrating ald and reactive ion etching |
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| Publication Number | Publication Date |
|---|---|
| CN206274508U true CN206274508U (en) | 2017-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621051978.1U Active CN206274508U (en) | 2016-09-13 | 2016-09-13 | The system for integrating ald and reactive ion etching |
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| CN (1) | CN206274508U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11183369B2 (en) | 2018-12-27 | 2021-11-23 | Industrial Technology Research Institute | Focalized microwave plasma reactor |
-
2016
- 2016-09-13 CN CN201621051978.1U patent/CN206274508U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11183369B2 (en) | 2018-12-27 | 2021-11-23 | Industrial Technology Research Institute | Focalized microwave plasma reactor |
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