CN206015133U - 一种降低硅料铸锭功耗的热场结构 - Google Patents
一种降低硅料铸锭功耗的热场结构 Download PDFInfo
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- CN206015133U CN206015133U CN201620873817.4U CN201620873817U CN206015133U CN 206015133 U CN206015133 U CN 206015133U CN 201620873817 U CN201620873817 U CN 201620873817U CN 206015133 U CN206015133 U CN 206015133U
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- 239000002210 silicon-based material Substances 0.000 title claims abstract description 28
- 238000005266 casting Methods 0.000 title claims abstract description 22
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 40
- 239000010439 graphite Substances 0.000 claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000009413 insulation Methods 0.000 claims abstract description 30
- 238000010792 warming Methods 0.000 claims abstract description 22
- 230000009467 reduction Effects 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
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CN201620873817.4U CN206015133U (zh) | 2016-08-11 | 2016-08-11 | 一种降低硅料铸锭功耗的热场结构 |
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CN201620873817.4U CN206015133U (zh) | 2016-08-11 | 2016-08-11 | 一种降低硅料铸锭功耗的热场结构 |
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CN206015133U true CN206015133U (zh) | 2017-03-15 |
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CN201620873817.4U Active CN206015133U (zh) | 2016-08-11 | 2016-08-11 | 一种降低硅料铸锭功耗的热场结构 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112647122A (zh) * | 2020-11-25 | 2021-04-13 | 浙江普智能源装备有限公司 | 一种铸造单晶的热场结构及其方法 |
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2016
- 2016-08-11 CN CN201620873817.4U patent/CN206015133U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112647122A (zh) * | 2020-11-25 | 2021-04-13 | 浙江普智能源装备有限公司 | 一种铸造单晶的热场结构及其方法 |
CN112647122B (zh) * | 2020-11-25 | 2022-05-24 | 浙江普智能源装备有限公司 | 一种铸造单晶的热场结构及其方法 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210622 Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TIANJIN ZHONGHUAN SEMICONDUCTOR Co.,Ltd. Address before: 010070 No.15, Saihan baoli'er street, Hohhot, Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee after: TCL Zhonghuan New Energy Technology Co.,Ltd. Address before: 300384 No.12 Haitai East Road, Huayuan Industrial Zone, New Technology Industrial Park, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. |
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CP01 | Change in the name or title of a patent holder |