CN206004132U - Lasing source plant growing device - Google Patents
Lasing source plant growing device Download PDFInfo
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- CN206004132U CN206004132U CN201620642520.7U CN201620642520U CN206004132U CN 206004132 U CN206004132 U CN 206004132U CN 201620642520 U CN201620642520 U CN 201620642520U CN 206004132 U CN206004132 U CN 206004132U
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
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- Cultivation Of Plants (AREA)
Abstract
The utility model discloses a kind of lasing source plant growing device, it includes protecting shell, nanometer light guide plate, nano coating reflection shield, semiconductor laser, laser controlling mechanism and power supply；Semiconductor laser has the advantages that electricity conversion is high, wavelength setting is accurate, reliability is high, is easy to control, and it is used cooperatively with laser controlling mechanism, realizes laser intensity and/or the time is adjustable, more conducively plant efficient growth.Power supply is used for powering for laser controlling mechanism, for laser controlling mechanism normal work.Lasing source plant growing device of the present utility model is novel in design, and structure is simple, economical and practical；The optical maser wavelength of transmitting and proportioning setting science, laser intensity and/or time are adjustable, with meet different plants in different growth phases the demand to intensity of illumination and light application time, improve plant growing photosynthetic efficiency, promote plant efficient growth, reducing pest and disease damage to occur, thus improving the yield and quality, there is higher economy and social value.
Description
Technical field
This utility model is related to plant growth device technical field, more particularly, to a kind of lasing source plant growing dress
Put.
Background technology
Luminous environment is one of growth and development of plants indispensable important physical environmental factorss.Light passes through to affect light cooperation
Adjust the growth promoter of plant with, photomorphogenesis and photoperiod, because residing climate zone is different or the reason such as seasonal variations,
Sometimes crops are inevitably grown in Light Stress.In recent years, North China including Beijing for the China is mostly
Area experienced long haze weather winter, and the low temperature and less sunshine leading to brings seriously to the plantation of crops for rotation facilities vegetable of surviving the winter
Retardation of growth, even destructive strike, carry out light filling using artificial light source, help that facilities vegetable is quick, safety grows
It is a requisite measure.In addition, continuing to increase with national policy support dynamics, national photovoltaic greenhouse project is also increasingly
Many.It is also required to artificial light source light filling technology and carry out supplementary light.The photovoltaic greenhouses occurring in a large number in recent years also cause larger to crop
Shading impact.The long-term low light level growth of crops can lead to that plant nutrition body is not healthy and strong, fruit drop is serious, fruit development is slow
Slowly the problems such as, sugar content reduces, yield declines, quality deteriorates.When crop is in below light compensation point, blade net photosynthesis product
Accumulation few even zero, this seriously inhibits the demand to photosynthate for the crop normal growth.Plant growing is to artificial light
The requirement in source is embodied in the aspects such as spectrum property, luminous efficiency and service life.In terms of spectrum property, both required light source can protect
The card demand to light quality for the plant photosynthesis, reduces unnecessary invalid spectrum and energy consumption again as far as possible；In terms of luminous efficiency it is desirable to
The photosynthetically active radiation amount sending reaches higher level with the ratio of power consumption；In other aspect of performances it is desirable to artificial light source
Service life is longer, light decay is smaller, and cost performance is higher.
Nineteen fifty-seven, Robert's Emerson (R.Emerson) is observed, under the conditions of far-red light (wavelength is more than 685nm),
As supplemented HONGGUANG (wavelength 650nm), then quantum yield increases, and summation when individually irradiating than the light of both wavelength also will
Greatly.The light of such two kinds of wavelength promotes the phenomenon of photosynthetic efficiency to be called double gain of light effects or Emerson effect (Emerson
effect).May be considered the light that far-red light has helped short wavelength, or the light of short wavelength has helped far-red light.
Utility model content
This utility model embodiment provides a kind of lasing source plant growing device, to promote the efficient life of plant
Long.
In order to solve the above problems, this utility model embodiment discloses a kind of lasing source plant growing device, bag
Include protection shell, nanometer light guide plate, nano coating reflection shield, semiconductor laser, laser controlling mechanism and power supply；
Described nano coating reflection shield is in concave shape, and has an accommodation space, and offers multiple through holes thereon；Described
The quantity of semiconductor laser is identical with the quantity of described through hole, and is fixed in described through hole, and described quasiconductor is swashed
The luminous end of light device is located in the accommodation space of described nano coating reflection shield；
Described nano coating reflection shield is fixed on described protection inside the shell, and it is outer that described nanometer light guide plate is fixed on described protection
On the opening of shell, thus covering the opening of described protection shell；
Described laser controlling mechanism is connected with described semiconductor laser, sharp for control semiconductor laser to be launched
Light light quality, intensity of illumination and light application time；
Described power supply is connected with described laser controlling mechanism, to power to described laser controlling mechanism.
Optionally, described semiconductor laser includes the semiconductor laser of emitting ultraviolet light, the optical maser wavelength of its transmitting
For 380nm；The semiconductor laser of transmitting blue violet light, the optical maser wavelength of its transmitting is 405nm；The semiconductor laser of transmitting blue light
Device, the optical maser wavelength of its transmitting is 450nm；The semiconductor laser of transmitting HONGGUANG, the optical maser wavelength of its transmitting is 660nm；Send out
Penetrate the semiconductor laser of far-red light, the optical maser wavelength of its transmitting is 730nm.
Optionally, described laser controlling mechanism includes controller U1, driver and laser pulse generation circuit；
Described controller U1 is connected with described driver signal, and described driver occurs circuit signal with described laser pulse
Connect, described laser pulse occurs circuit to be connected with described semiconductor laser circuit.
Optionally, described HONGGUANG and the light quality ratio of blue light are (4～10)：1；The light quality of described red and far-red light
Ratio is (2～8)：1.
Optionally, described lasing source plant growing device also includes intensity of illumination sensor, and described intensity of illumination passes
Sensor is connected with described controller U1 signal.
Optionally, described nano coating reflection shield and nanometer light guide plate be square.
Optionally, described nanometer light guide plate is the arc of evagination.
This utility model provides a kind of lasing source plant growing device, and it includes protecting shell, nanometer light guide plate, receives
Rice coating reflection shield, semiconductor laser, laser controlling mechanism and power supply；Described nano coating reflection shield is fixed on described protection
Inside the shell, described nanometer light guide plate is fixed on the opening of described protection shell, thus covering the opening of described protection shell；Institute
State laser controlling mechanism to be connected with described semiconductor laser, for the laser light quality controlling semiconductor laser to be launched；Institute
State power supply to be connected with described laser controlling mechanism, to power to described laser controlling mechanism.Semiconductor laser can launch 5 kinds of ripples
Long laser, is conducive to plant to carry out efficient photosynthesis；And, semiconductor laser has electricity conversion height, ripple
Long setting precisely, irradiate efficiently, life-span length and reliability are high, be easy to the advantages of control, it is coordinated with laser controlling mechanism
Use, intensity and/or the time of realizing transmitting laser are adjustable, to meet different plants in different growth stage to intensity of illumination
With the demand of light application time, it is more beneficial for the efficient growth of plant.Power supply is used for powering for laser controlling mechanism, for laser controlling
Mechanism's normal work.The lasing source plant growing device that this utility model provides is novel in design, and structure is simple, economical real
With；The laser intensity of transmitting and/or time are adjustable, can meet plant when different growth stage is to intensity of illumination and illumination
Between demand, improve plant growing photosynthetic efficiency, promote plant efficient growth, reduce pest and disease damage occur, thus improving product
Amount and quality, have higher economy and social value.
Brief description
By reading the detailed description of hereafter preferred implementation, various other advantages and benefit are common for this area
Technical staff will be clear from understanding.Accompanying drawing is only used for illustrating the purpose of preferred implementation, and is not considered as to this practicality
New restriction.And in whole accompanying drawing, it is denoted by the same reference numerals identical part.In the accompanying drawings：
Fig. 1 is the structural representation of lasing source plant growing device of the present utility model；
Fig. 2 is the structural representation of lasing source plant growing device of the present utility model；
Fig. 3 is the electrical block diagram of laser controlling mechanism of the present utility model.
Fig. 4 is the solar radiation spectrum schematic diagram of the photosynthesis absorption of plant of the present utility model；
Description of reference numerals：1- protects shell；2- nanometer light guide plate；3- nano coating reflection shield；4- nano coating is reflective
Cover.
Specific embodiment
To describe this utility model in detail below with reference to accompanying drawing and in conjunction with the embodiments.It should be noted that not rushing
In the case of prominent, the embodiment in this utility model and the feature in embodiment can be mutually combined.
Embodiment 1
Refer to Fig. 1, the lasing source plant growing device of this utility model embodiment one offer is provided.Should
Lasing source plant growing device includes：Protect shell, nanometer light guide plate, nano coating reflection shield, semiconductor laser, swash
Photocontrol mechanism, power supply and intensity of illumination sensor；
Described nano coating reflection shield is in concave shape, and has an accommodation space, and offers multiple through holes thereon；Described
The quantity of semiconductor laser is identical with the quantity of described through hole, and is fixed in described through hole, and described quasiconductor is swashed
The luminous end of light device is located in the accommodation space of described nano coating reflection shield；And it is highly preferred that described nano coating is reflective
Cover for square, described nanometer light guide plate is also square, and described nanometer light guide plate covers the opening of described nano coating reflection shield, and
Close described accommodation space；Now when described semiconductor laser lights, one part laser can directly pass through nano coating
To emission after reflection shield；And remaining part is after the reflection of nano coating reflection shield, also by described nanometer light guide plate
To emission；Thus using the light scattering effect of the nanoparticle being dispersed in nanometer light guide plate, by the point source of laser
It is changed into area source, thus the laser of this lasing source plant growing device range of exposures can become big, the irradiation of light source output
Degree is evenly；Described nano coating reflection shield is connected with described protection shell, effectively improves light total reflectivity and scattered power, from
And improve the effective rate of utilization of the LASER Light Source of plant growing device, realize energy-saving consumption.
And in the present embodiment, described semiconductor laser could be arranged to 5 kinds, and it is sharp to include the quasiconductor of emitting ultraviolet light
Light device, the optical maser wavelength of its transmitting is 380nm；Launch the semiconductor laser of blue violet light, the optical maser wavelength of its transmitting is
405nm；The semiconductor laser of transmitting blue light, the optical maser wavelength of its transmitting is 450nm；The semiconductor laser of transmitting HONGGUANG,
The optical maser wavelength of its transmitting is 660nm；The semiconductor laser of transmitting far-red light, the optical maser wavelength of its transmitting is 730nm.
In the present embodiment, described nano coating reflection shield and semiconductor laser are respectively positioned on described protection inside the shell, i.e. institute
State nano coating reflection shield and be fixed on described protection inside the shell, described nanometer light guide plate is fixed on the opening of described protection shell
Place.
Described laser controlling mechanism is connected with described semiconductor laser, sharp for control semiconductor laser to be launched
Light light quality (refer to the proportioning of the laser of various wavelength, specially wavelength be the ultraviolet light of 380nm, the blue violet light of 405nm, 450nm
The far-red light of blue light, the HONGGUANG of 660nm and 730nm), intensity of illumination and photoperiod etc.；Described power supply and laser controlling mechanism phase
Even, for powering for described laser controlling mechanism；And for meeting different applied environments, the power supply mode bag of this power supply setting
Include external municipal administration power supply, common batteries, solar module etc..
Further, power supply has voltage regulation unit, for providing stable low-tension supply for laser controlling mechanism, such as
DC12V power supply, the voltage output end of this voltage regulation unit is connected with laser controlling mechanism.Further, anti-according to photosynthesis light
Should be with dark reaction principle, the power supply that semiconductor laser described in phase is transmitted can adopt and be swashed by the pulse that controller U1 is controlled
Photoswitch power supply, further greatly to save energy consumption, and the light under the conditions of penetrating than continuous illumination under the conditions of pulsed light
Close the speed of action to be greatly enhanced, this structure will be described below.
It is to open described semiconductor laser when suitable, in the present embodiment, described lasing source plant growing
Device also includes intensity of illumination sensor, and described intensity of illumination sensor is connected with described laser controlling mechanism, by it
The plant growth environment illuminance parameter of detection is sent to described laser controlling mechanism, and described laser controlling mechanism is according to described plant
Thing growing environment illuminance parameter, controls the opening and closing of semiconductor laser in conjunction with the database information setting, that is, judge to work as front ring
Border carries out artificially feed, and the active power of the described semiconductor laser of control, example the need of opening semiconductor laser
As worked as, room is controlled to described semiconductor laser by PWM, thus it is possible to vary the dutycycle of described PWM.
In the present embodiment, described laser controlling mechanism includes controller U1, driver and laser pulse and circuit occurs；
Described controller U1 is ATXMEGA32A4-AU controller, and described controller U1 includes 44 pins, its 8th pin
Ground connection；9th pin connects+3.3V power supply；18th pin ground connection；19th pin connects+3.3V power supply；38th pin ground connection；The
39 pins connect+3.3V power supply；Its 30th pin is grounded, and the 31st pin connects+3.3V power supply.
Described driver is IXDN604 chip, and the 11st pin of described controller U1 passes through described in resistance R4 is connected to
The INB pin of IXDN604 chip；And one end of resistance R6 is grounded, the other end is also connected to the INB pipe of described IXDN604 chip
Foot；The GND pin ground connection of described IXDN604 chip, its VCC pin is connected to described+12V DC source (VCC by resistance R3
Power supply)；One end ground connection of electric capacity C3, the other end is connected to the VCC pin of described IXDN604 chip, to carry out to described VCC end
Voltage stabilizing；By above-mentioned connection, when described controller U1 passes through its 11st pin (PC1 pin) output switching signal, Ke Yitong
The OUTB pin crossing described IXDN604 chip exports powerful switching current signal.
Described driver occurs circuit to be connected with described laser pulse, thus under the driving of described driver, producing and swash
Light pulse；Specifically, described laser pulse occurs circuit to include field effect transistor Q1, diode D1 and semiconductor laser D2；
The OUTB pin of described driver (IXDN604 chip) is connected to the G end of described field effect transistor Q1 by resistance R5；Described field effect
The D end of pipe Q1 should be connected to the power supply of+200V by resistance R2；The S end ground connection of described field effect transistor；Simultaneously described electric capacity C1 and
One end of C2 is grounded respectively；The other end links together, and is connected to+200V power supply；So that electric capacity C1 and C2 forms high pressure
The filter capacitor of input power；The minus earth of described diode D1, the positive pole of described semiconductor laser D2 passes through resistance R7
Ground connection；The positive pole of described diode D1 is connected with the negative pole of described semiconductor laser D2, and is connected to one end of electric capacity C4, institute
The other end stating electric capacity C4 is connected to the D end of described field effect transistor Q1.
In the present embodiment, wherein resistance R2 is charging current limiter resistance, and resistance R7 is pulse current current-limiting resistance, and electric capacity C4 is
Storage capacitor ,+200V power supply is input HVB high voltage bias, and diode D1 is clamp diode, and D2 is semiconductor laser, field effect
Pipe Q1 is controlling switch.When field effect transistor Q1 disconnects ,+200V HVB high voltage bias is passed through resistance R2 and is charged to storage capacitor C4, electricity
The voltage holding C4 two ends raises immediately, after charging complete, the voltage UC at storage capacitor two ends i.e. with HVB high voltage bias voltage+200V phase
Deng after field effect transistor Q1 closes, storage capacitor C4 passes through field effect transistor Q1, electric discharge current-limiting resistance R7 and semiconductor laser
The loop instantaneous discharge that D2 is formed, the voltage being added in semiconductor laser D2 two ends is -200V.
Compared with common lamp source and LED light source, semiconductor laser (LD) has more smart as plant culture light source
Accurate, efficiently, low consumption, abridged edition, with strong points the features such as, specially：
Light source is smaller light；Low voltage drive, driving power supply is more compact；Heat radiation is minimum, and accessible plant is irradiated；Can
Carry out short pulse illumination, it is possible to decrease power demand；Deterioration is few, and long service life, up to 50000 hours；As long as radiator,
Chiller is little；Laser light quality has efficiency light excitation behavior, more energy efficient section consumption；Can be for different plants, different growth phases
And the optionally suitable wavelength of different planting environment and light quality proportioning, in the present embodiment, the laser of semiconductor laser precisely sets
It is set to the ultraviolet light of 380nm, the blue violet light of 405nm, the light of the far-red light of the blue light of 450nm, the HONGGUANG of 660nm and 730nm are joined
Ratio combination, does not have unnecessary unnecessary wavelength to photosynthesis of plant；Electric energy be converted into the conversion efficiency up to 50% of luminous energy with
On.
In above-mentioned semiconductor laser, light quality (R/B) ratio of the laser red light of described transmitting and blue light (HONGGUANG with
The light quality ratio of blue light) it is (4～10)：1；The laser red light of described transmitting and light quality (R/FR) ratio of far-red light
For (2～8)：1；Blue violet light LD of 405nm is 1～2；The ultraviolet light LD of 380nm is 1～2.
The LASER Light Source configuration of above-mentioned semiconductor laser and wavelength selection are mainly based upon basic to photosynthesis of plant
The research of principle.Solar radiation spectrum that the photosynthesis of plant absorb is as shown in figure 4, the effective spectrum of green plantss photosynthesis
Scope is 380nm-730nm, and what the photosynthesis of plant mainly absorbed is HONGGUANG and blue light, additionally, the ultraviolet of also fraction
Line and infrared ray.
In conjunction with Fig. 4 as can be seen that the photosynthesis of plant occur in chloroplast, chloroplast is to enter in non-green plant cell
The photosynthetic structure of row.Chlorophyll (chlorophyll a and chlorophyll b), β-carotenoid is mainly contained in the chloroplast of plant
(carotene and phylloxanthin), phytochrome (Pfr, Pr).The wave spectrum peak that chlorophyll a, chlorophyll b and β-carotenoid mainly absorb
It is worth the HONGGUANG of blue light for 450nm and 660nm, phytochrome absorption peak is 380nm, 660nm and 730nm.Phytochrome is adjusted
The reaction to light for the plant of multiple difference, including photoperiod, seed sprouting, lamina, hypocotyl elongation and de-etiolation.Therefore, this reality
With new selection, the growth promoter of plant is played with the light proportioning combination of critical effect, the i.e. ultraviolet light of 380nm, 405nm
Blue violet light, the far-red light of the blue light of 450nm, the HONGGUANG of 660nm and 730nm.Additionally, the 380nm selecting in the present embodiment
The royal purple luminous energy of ultraviolet light and 405nm promotes the formation of Anthocyanin, and some insect pests can also be played with certain preventing and treating work
With.
Have research to confirm that photosynthesis can be divided into two steps, one be just can must carry out under light, by light institute
The photoreaction causing.It can be divided into primary reaction again, and electron transmission and two stages of photophosphorylation；Another is then
Do not need the general chemical reaction (can also carry out under light) of light, it is that carbon dioxide fixation and reduction are become Organic substance
Reaction, i.e. dark reaction.
The Wa Baige (O.Warburg) of Germany carries out flash point test with algae, under the premise of light energy identical, Yi Zhongyong
Continuous irradiation, another kind flash irradiation, the middle interval necessarily dark phase, (glisten 0.0034S every time, interval 0.0166S, and per second 50
Secondary), find that the latter's photosynthetic efficiency is 200%～400% under continuous light.These experiments indicate photosynthesis and can be divided into need
Two stages of dark reaction (dark reaction) of the photoreaction (light reaction) of light and not light requirement.
Kozai etc. is studied using the impact that LED pulsed light reacts to growth and the light compositing of Caulis et Folium Lactucae sativae, result table
Bright, the cycle be below 100 μ s pulsed light under the conditions of, the facilitation effect under the conditions of Caulis et Folium Lactucae sativae growth fraction continuous illumination is penetrated improves
20%, thus confirming the imagination that can accelerate its growth using different frequency pulse light irradiation Caulis et Folium Lactucae sativae.It is right that Tanaka etc. passes through
The practical research of LED plant culture, has inquired into pulsed light exposure period and the impact to plant growing for the dutycycle, result table
Bright, when dutycycle reaches 25%～50%, plant growing can be accelerated.
Therefore, the power supply that in the present embodiment, semiconductor laser is transmitted is using the pulse laser being controlled by controller U1
Switching Power Supply, not only can greatly save energy consumption, and the photosynthesis under the conditions of penetrating than continuous illumination under the conditions of pulsed light
Speed can be greatly enhanced, and more conducively promotes plant efficient growth.
Finally it should be noted that：Above example only in order to the technical solution of the utility model to be described, is not intended to limit；
Although being described in detail to this utility model with reference to the foregoing embodiments, it will be understood by those within the art that：
It still can be modified to the technical scheme described in foregoing embodiments, or wherein some technical characteristics are carried out etc.
With replacement；And these modifications or replacement, do not make the essence of appropriate technical solution depart from this utility model each embodiment technology
The spirit and scope of scheme.
Claims (7)
1. a kind of lasing source plant growing device is it is characterised in that include protection shell, nanometer light guide plate, nano coating
Reflection shield, semiconductor laser, laser controlling mechanism and power supply；
Described nano coating reflection shield is in concave shape, and has an accommodation space, and offers multiple through holes thereon；Described partly lead
The quantity of body laser is identical with the quantity of described through hole, and is fixed in described through hole, and makes described semiconductor laser
Luminous end be located at described nano coating reflection shield accommodation space in；
Described nano coating reflection shield is fixed on described protection inside the shell, and described nanometer light guide plate is fixed on described protection shell
On opening, thus covering the opening of described protection shell；
Described laser controlling mechanism is connected with described semiconductor laser, for the laser light controlling semiconductor laser to be launched
Matter, intensity of illumination and light application time；
Described power supply is connected with described laser controlling mechanism, to power to described laser controlling mechanism.
2. lasing source plant growing device according to claim 1 is it is characterised in that described semiconductor laser bag
Include the semiconductor laser of emitting ultraviolet light, the optical maser wavelength of its transmitting is 380nm；The semiconductor laser of transmitting blue violet light,
The optical maser wavelength of its transmitting is 405nm；The semiconductor laser of transmitting blue light, the optical maser wavelength of its transmitting is 450nm；Transmitting is red
The semiconductor laser of light, the optical maser wavelength of its transmitting is 660nm；The semiconductor laser of transmitting far-red light, what it was launched swashs
The a length of 730nm of light wave.
3. lasing source plant growing device according to claim 2 is it is characterised in that described laser controlling mechanism wraps
Include controller U1, driver and laser pulse and circuit occurs；
Described controller U1 is connected with described driver signal, and described driver and described laser pulse occur circuit signal even
Connect, described laser pulse occurs circuit to be connected with described semiconductor laser circuit.
4. lasing source plant growing device according to claim 3 is it is characterised in that the light of described HONGGUANG and blue light
Matter ratio is (4～10)：1；The light quality ratio of described red and far-red light is (2～8)：1.
5. lasing source plant growing device according to claim 4 is it is characterised in that also include intensity of illumination sensing
Device, described intensity of illumination sensor is connected with described controller U1 signal.
6. lasing source plant growing device according to claim 5 is it is characterised in that described nano coating reflection shield
With nanometer light guide plate be square.
7. lasing source plant growing device according to claim 6 is it is characterised in that described nanometer light guide plate is outer
Convex arc.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620642520.7U CN206004132U (en) | 2016-06-24 | 2016-06-24 | Lasing source plant growing device |
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| CN201620642520.7U CN206004132U (en) | 2016-06-24 | 2016-06-24 | Lasing source plant growing device |
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| CN206004132U true CN206004132U (en) | 2017-03-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025791A (en) * | 2016-06-24 | 2016-10-12 | 陈晓栋 | Laser radiation source plant growth device |
| CN108007014A (en) * | 2017-12-01 | 2018-05-08 | 浙江大学 | Electric card refrigerating plant and its method based on photoelectricity combination drive |
| CN116369083A (en) * | 2023-06-02 | 2023-07-04 | 浙江长芯光电科技有限公司 | Laser photovoltaic planting method |
-
2016
- 2016-06-24 CN CN201620642520.7U patent/CN206004132U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025791A (en) * | 2016-06-24 | 2016-10-12 | 陈晓栋 | Laser radiation source plant growth device |
| CN108007014A (en) * | 2017-12-01 | 2018-05-08 | 浙江大学 | Electric card refrigerating plant and its method based on photoelectricity combination drive |
| CN116369083A (en) * | 2023-06-02 | 2023-07-04 | 浙江长芯光电科技有限公司 | Laser photovoltaic planting method |
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Effective date of registration: 20170619 Address after: 100086 1707-030 room, No. 113, Zhichun Road, Beijing, Haidian District, China Patentee after: Beijing Academy of Agricultural Sciences Address before: 100094 Haidian District Old Summer Palace West Road, No. 2, China Agricultural University, west campus, Patentee before: Chen Xiaodong |
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