CN206002559U - A kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy - Google Patents
A kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy Download PDFInfo
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- CN206002559U CN206002559U CN201620828200.0U CN201620828200U CN206002559U CN 206002559 U CN206002559 U CN 206002559U CN 201620828200 U CN201620828200 U CN 201620828200U CN 206002559 U CN206002559 U CN 206002559U
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- solid inert
- scanning probe
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Abstract
The utility model discloses a kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy, including conductor sample, the Surface coating of the conductor sample has the fine and close solid inert film of nanometer grade thickness, the solid inert film can be electrically conductive film, can also be the dielectric film of insulation, they can be used to prevent the random oxidation of sample surfaces, be conducive to the measurement of the scanning probe microscopies such as AFM, magnetic force microscopy, PSTM;And probe and the generation of sample room short circuit phenomenon of the dielectric film for insulating when can more prevent testing current, it is particularly suited for PSTM.The utility model is with low cost and simple to operate, and atmosphere at room temperature environment SPM technical staff can be directly tested to film sample.
Description
Technical field
The utility model belongs to the sample treatment technical field of scanning probe microscopy, and in particular to a kind of being applied to is scanned
The anti-short circuit film sample of the resistant to deterioration of probe microscope.
Background technology
Scanning probe microscopy (SPM) with its current highest spatial resolution, science and technology and nanosecond science and technology field on surface
Irreplaceable and vital effect is given play to, but there is also the difficult problem of some:
On the one hand, when the sample for being scanned into picture is the easily stronger material of oxidation, activity in atmosphere, surface holds
Easily there is random oxidation deterioration, affect the SPM imaging under the conventional environment such as atmosphere at room temperature, such as AFM, magnetic force
Microscope etc..Now, can only be tested under high vacuum environment.But the price of vacuum equipment is expensive, sufficiently bulky, occupancy
The expensive real estate in a lot of laboratories, technical staff that operating process is a lot, needs are special etc. are very big difficult problems.Hinder and receive
The development of rice science and technology and popularization.
On the other hand, as the SPM for measuring electric current, such as PSTM (STM) or conducting atomic force microscopy
(CAFM), when, easily there is the short circuit of conductor probe and conductor sample room, impact measurement in conductor sample.
A difficult problem for easily short circuit in order to overcome that above-mentioned sample is perishable, between sample and conducting probe, in project approval number be:
Under the support of 11304082 state natural sciences fund " improvement of supper-fast PSTM and application ", this patent is carried
A kind of anti-short circuit film sample of resistant to deterioration suitable for scanning probe microscopy is gone out.
Content of the invention
The utility model solve technical problem there is provided a kind of resistant to deterioration suitable for scanning probe microscopy prevent short
Road film sample.
The utility model is adopted the following technical scheme that for solving above-mentioned technical problem, a kind of suitable for scanning probe microscopy
Resistant to deterioration anti-short circuit film sample, including conductor sample, it is characterised in that:The Surface coating of the conductor sample has nanoscale
The fine and close solid inert film of thickness.
Further preferably, described solid inert film is solid inert conducting film, and the material of the solid inert conducting film is
Gold, platinum or Graphene.
Further preferably, the solid inert film that the bread to be tested of the conductor sample covers is solid inert dielectric film,
The material of the solid inert dielectric film is sodium chloride, alundum (Al2O3), silicon nitride, silica or polytetrafluoroethylene (PTFE);Conductor
The solid inert film of the remainder cladding of sample is solid inert conducting film.
Further preferably, described conductor sample is oxidizable sample or inert conductor sample under atmosphere at room temperature environment,
Wherein oxidizable under atmosphere at room temperature environment sample is single crystal Cu, monocrystalline silicon, iron or cobalt, and inert conductor sample is graphite or gold.
Further preferably, when the conductor sample for needing measurement is magnetic sample, in the Surface coating non-magnetic of conductor sample
Property film;When the optical characteristics for needing to measure conductor sample, in the Surface coating light transmissive film of conductor sample.
Further preferably, described magnetic sample is iron or cobalt, and the material of described nonmagnetic film is silica or three
Al 2 O, the material of described light transmissive film is calcirm-fluoride or lithium fluoride.
The utility model is with low cost and simple to operate, and atmosphere at room temperature environment SPM technical staff can enter to film sample
Row is directly tested.
Description of the drawings
Fig. 1 is the structural representation of film sample obtained in embodiment 1;
Fig. 2 is the structural representation of film sample obtained in embodiment 2;
Fig. 3 is the structural representation of film sample obtained in embodiment 3.
In figure:1st, perishable conductor sample, 2, solid inert dielectric film, 3, solid inert conducting film.
Specific embodiment
Particular content of the present utility model is described in detail in conjunction with accompanying drawing.Operation principle is:Inert material plasma membrane includes that solid-state is lazy
Property dielectric film and solid inert conducting film, be unlikely to deteriorate under room temperature, atmospheric environment, while the activity of inside can be protected relatively
There is no random oxidation deterioration in strong conductor sample surfaces.
When solid dielectric film is coated on conducting sample, dielectric film can be used as the solid-state gesture of PSTM
Build, remain able to STM test is carried out, and needle point is short-circuited with sample when there is no concern that test.
Embodiment 1
The all outer surfaces of perishable conductor sample 1 are plated in filming equipment the solid inert conduction of 0.5-10nm or so
Film 3, the perishable conductor sample 1 are single crystal Cu or monocrystalline silicon, and solid inert conducting film 3 is gold, platinum or Graphene, that is, covered
Membrane sample.
Embodiment 2
Will be lazy for solid-state that the unsalted surface to be tested of perishable conductor sample 1 plates 0.5-10nm or so in filming equipment
Property dielectric film 2, wherein perishable conductor sample 1 is single crystal Cu, monocrystalline silicon, iron or cobalt, etc. solid inert dielectric film 2 is
Aluminum oxide, polytetrafluoroethylene (PTFE) or sodium chloride, then take out i.e. and obtain film sample.
Embodiment 3
In example 2, by the face non-to be tested plating 0.5-10nm left and right thickness of the film sample after the plated film for obtaining
Solid inert conducting film 3, the solid inert conducting film 3 are gold, platinum or Graphene, are easy to connection electrode.
Embodiment 4
When being magnetic sample of measurement is needed, including iron, cobalt, then in the Surface coating nonmagnetic film of sample, such as two
Silica, alundum (Al2O3);When need measure sample optical characteristics when, sample surfaces coat light transmissive film, such as calcirm-fluoride,
Lithium fluoride.
General principle of the present utility model, principal character and advantage is had been shown and described above, new without departing from this practicality
On the premise of type spirit and scope, the utility model also has various changes and modifications, and these changes and improvements both fall within requirement and protect
The scope of the present utility model of shield.
Claims (6)
1. a kind of resistant to deterioration suitable for scanning probe microscopy anti-short circuit film sample, including conductor sample, it is characterised in that:
The Surface coating of the conductor sample has the fine and close solid inert film of nanometer grade thickness.
2. the anti-short circuit film sample of a kind of resistant to deterioration suitable for scanning probe microscopy according to claim 1, which is special
Levy and be:Described solid inert film is solid inert conducting film, and the material of the solid inert conducting film is gold, platinum or stone
Black alkene.
3. the anti-short circuit film sample of a kind of resistant to deterioration suitable for scanning probe microscopy according to claim 1, which is special
Levy and be:The solid inert film that the bread to be tested of the conductor sample covers is solid inert dielectric film, the solid inert electricity
The material of deielectric-coating is sodium chloride, alundum (Al2O3), silicon nitride, silica or polytetrafluoroethylene (PTFE), its remaining part of conductor sample
The solid inert film that subpackage is covered is solid inert conducting film.
4. the anti-short circuit film sample of a kind of resistant to deterioration suitable for scanning probe microscopy according to claim 1, which is special
Levy and be:Described conductor sample is oxidizable rotten sample or inert conductor sample, wherein room temperature under atmosphere at room temperature environment
Under atmospheric environment, oxidizable sample is single crystal Cu, monocrystalline silicon, iron or cobalt, and inert conductor sample is graphite or gold.
5. the anti-short circuit of a kind of resistant to deterioration suitable for scanning probe microscopy as claimed in any of claims 1 to 4
Film sample, it is characterised in that:When the conductor sample for needing measurement is magnetic sample, in the Surface coating non-magnetic of conductor sample
Property film;When the optical characteristics for needing to measure conductor sample, in the Surface coating light transmissive film of conductor sample.
6. the anti-short circuit film sample of a kind of resistant to deterioration suitable for scanning probe microscopy according to claim 5, which is special
Levy and be:Described magnetic sample is iron or cobalt, and the material of described nonmagnetic film is silica or alundum (Al2O3), described
The material of light transmissive film be calcirm-fluoride or lithium fluoride.
Priority Applications (1)
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CN201620828200.0U CN206002559U (en) | 2016-08-02 | 2016-08-02 | A kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy |
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CN201620828200.0U CN206002559U (en) | 2016-08-02 | 2016-08-02 | A kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy |
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CN201620828200.0U Expired - Fee Related CN206002559U (en) | 2016-08-02 | 2016-08-02 | A kind of anti-short-circuit film sample of resistant to deterioration suitable for scanning probe microscopy |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106093472A (en) * | 2016-08-02 | 2016-11-09 | 河南师范大学 | A kind of resistant to deterioration anti-short circuit film sample being applicable to scanning probe microscopy |
-
2016
- 2016-08-02 CN CN201620828200.0U patent/CN206002559U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106093472A (en) * | 2016-08-02 | 2016-11-09 | 河南师范大学 | A kind of resistant to deterioration anti-short circuit film sample being applicable to scanning probe microscopy |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 Termination date: 20190802 |