CN205940475U - 一种磁控溅射平面靶刻蚀深度测量装置 - Google Patents
一种磁控溅射平面靶刻蚀深度测量装置 Download PDFInfo
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CN111172507A (zh) * | 2020-03-05 | 2020-05-19 | 东莞南玻工程玻璃有限公司 | 平面靶材烧穿报警*** |
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CN111172507A (zh) * | 2020-03-05 | 2020-05-19 | 东莞南玻工程玻璃有限公司 | 平面靶材烧穿报警*** |
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Effective date of registration: 20190202 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 332020 National Youth Venture Base Service Bureau of Gongqing City, Jiujiang City, Jiangxi Province Patentee before: Komsomolsk, Jiangxi Han Neng thin film solar company limited |
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Effective date of registration: 20190314 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
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