CN205900577U - Wide spectrum gaN base LED epitaxial structure - Google Patents
Wide spectrum gaN base LED epitaxial structure Download PDFInfo
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- CN205900577U CN205900577U CN201620524657.2U CN201620524657U CN205900577U CN 205900577 U CN205900577 U CN 205900577U CN 201620524657 U CN201620524657 U CN 201620524657U CN 205900577 U CN205900577 U CN 205900577U
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Abstract
The utility model provides a wide spectrum gaN base LED epitaxial structure, N type gaN layer, release of stress layer, superlattice multi -quantum well luminescent layer, p type alGaN electron barrier layer and p type gaN layer on the LED epitaxial structure includes the substrate in proper order and is located the substrate, superlattice multi -quantum well luminescent layer including at least two -layer multi -quantum well luminescent layer, half wide HW of different multi -quantum well luminescent layers is different, every layer of multi -quantum well luminescent layer comprises a plurality of stacking gradually with the gaN layer the inGaN layer. The utility model discloses well superlattice multi -quantum well luminescent layer includes the different multilayer multi -quantum well luminescent layer of half wide HW, can reach the effect of wide spectrum, and half wide HW is steerable between 40~60nm for superlattice multi -quantum well luminescent layer, still can adjust the spectral range according to practical application, have extensive application in industry such as afforest, breed fish.
Description
Technical field
This utility model is related to led technical field, more particularly, to a kind of wide spectrum gan base led epitaxial structure.
Background technology
Light emitting diode (light-emitting diode, led) is the semiconductor electronic component that a kind of energy lights.This
Electronic component occurred early in 1962, can only send the HONGGUANG of low luminosity in early days, develop other monochromatic versions afterwards, when
Throughout visible ray, infrared ray and ultraviolet, luminosity also brings up to suitable luminosity to the light that can send to today.And purposes also by
At the beginning as display lamp, display panel etc.；With the continuous progress of technology, light emitting diode be widely used in display,
Television set daylighting decoration and illumination.
Development and popularization green energy resource pollution-free food, are the themes of 21st century market food products market.Green vegetables,
Grain and food should come from optimal ecological environment it is ensured that pollution-free, safety, high-quality, the characteristic of nutrition, and wherein especially to reduce
Persticide residue or non agricultural chemical residuum are environmental protection, the primary necessary requirement of green.In order to solve this present situation, all parts of the country also phase
Continue using miscellaneous parasite killing light fixture, but most of trapping lamp lightwave spectrum is narrow, lure worm effect difference the shortcomings of, light fixture work(simultaneously
Consumption is big, short life, and keeps in repair frequently.
In view of this, in order to solve above-mentioned technical problem it is necessary to provide a kind of wide spectrum gan base led epitaxial structure.
Utility model content
The purpose of this utility model is to provide a kind of wide spectrum gan base led epitaxial structure, can obtain wider frequency spectrum
Scope.
To achieve these goals, the technical scheme that this utility model embodiment provides is as follows:
A kind of wide spectrum gan base led epitaxial structure, described led epitaxial structure includes substrate and the n being located on substrate successively
Type gan layer, stress release layer, superlattices multiple quantum well light emitting layer, p-type algan electronic barrier layer and p-type gan layer, described super crystalline substance
Lattice multiple quantum well light emitting layer includes at least two-layer multiple quantum well light emitting layer, and half-breadth hw of different multiple quantum well light emitting layers is different,
Every layer of multiple quantum well light emitting layer is made up of some being stacked gradually with gan layer to ingan layer.
As further improvement of the utility model, described superlattices multiple quantum well light emitting layer includes 2 ~ 10 layers of MQW
Luminescent layer.
As further improvement of the utility model, described multiple quantum well light emitting layer by 2 ~ 8 pairs of ingan layers and gan layer according to
Secondary stacking composition.
As further improvement of the utility model, in described multiple quantum well light emitting layer, each pair ingan layer and gan layer is total
Thickness is 6 ~ 16nm, and the thickness of every layer of ingan layer is 2 ~ 6nm, and the thickness of every layer of gan layer is 4 ~ 13nm.
As further improvement of the utility model, described superlattices multiple quantum well light emitting layer includes 5 layers of MQW and sends out
Photosphere, half-breadth hw of superlattices multiple quantum well light emitting layer is 40 ~ 60nm.
Compared with prior art, this utility model superlattices multiple quantum well light emitting layer includes the different multilamellar volume of half-breadth hw
Sub- trap luminescent layer, can reach the effect of wide spectrum, superlattices multiple quantum well light emitting layer half-breadth hw can be controlled in 40 ~ 60nm it
Between；Also spectral range can be adjusted according to practical application, afforesting, the industry such as breed fish has a wide range of applications.
Brief description
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or in description of the prior art the accompanying drawing of required use be briefly described it should be apparent that, drawings in the following description are only
It is some embodiments described in this utility model, for those of ordinary skill in the art, do not paying creative work
On the premise of, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of this utility model wide spectrum gan base led epitaxial structure；
Fig. 2 is the structural representation of multiple quantum well light emitting layer in this utility model superlattices multiple quantum well light emitting layer；
Fig. 3 is the structural representation of wide spectrum gan base led epitaxial structure in this utility model one specific embodiment.
Specific embodiment
In order that those skilled in the art more fully understand the technical scheme in this utility model, below in conjunction with this reality
With the accompanying drawing in new embodiment, the technical scheme in this utility model embodiment is clearly and completely described it is clear that
Described embodiment is only a part of embodiment of this utility model, rather than whole embodiments.Based on this utility model
In embodiment, the every other enforcement that those of ordinary skill in the art are obtained under the premise of not making creative work
Example, all should belong to the scope of this utility model protection.
Shown in ginseng Fig. 1, in this utility model, disclose a kind of wide spectrum gan base led epitaxial structure, this led epitaxial structure
Include substrate 10 and the N-shaped gan layer 20 being located on substrate, stress release layer 30, superlattices multiple quantum well light emitting layer 40, p successively
Type algan electronic barrier layer 50 and p-type gan layer 60.
Wherein, superlattices multiple quantum well light emitting layer 40 includes at least two-layer multiple quantum well light emitting layer, different MQW
Glow peak half width values during the half-breadth hw(normal work of luminescent layer) different, every layer of multiple quantum well light emitting layer is by some to ingan
Layer and gan layer stack gradually composition.
Preferably, the substrate 10 in this utility model can be sapphire, si, sic, gan, zno etc..
Further, the superlattices multiple quantum well light emitting layer 40 in this utility model includes 2 ~ 10 layers of multiple quantum well light emitting
Layer, in conjunction with shown in Fig. 2, every layer of multiple quantum well light emitting layer is stacked gradually with gan layer by 2 ~ 8 pairs of ingan layers and forms, each pair ingan
Layer is 6 ~ 16nm with the thickness of gan layer, and in ingan layer, in component content is 10% ~ 30%, to ensure superlattices multiple quantum well light emitting
Half-breadth hw of layer is 40 ~ 60nm.
Correspondingly, the invention also discloses a kind of manufacture method of wide spectrum gan base led epitaxial structure, including with
Lower step:
On s1, load plate substrate being placed in mocvd reative cell, carry out surface cleaning process at 1050 ~ 1100 DEG C；
S2, under the conditions of 1000 ~ 1200 DEG C, in Grown N-shaped gan layer；
S3, under the conditions of 800 ~ 820 DEG C, growth stress releasing layer on N-shaped gan layer；
S4, under the conditions of 760 ~ 800 DEG C, ingan layer and gan layer are grown on stress release layer successively, form MQW
Luminescent layer, repeated growth at least two-layer multiple quantum well light emitting layer, form superlattices multiple quantum well light emitting layer, wherein, every layer of volume
The growth temperature difference of sub- trap luminescent layer is 5 ~ 20 DEG C；
S5, under the conditions of 750 ~ 900 DEG C, p-type algan electronic barrier layer is grown on superlattices multiple quantum well light emitting layer；
S6, under the conditions of 800 ~ 1000 DEG C, p-type gan layer is grown on p-type algan electronic barrier layer.
Preferably, in step s4, superlattices multiple quantum well light emitting layer by 2 ~ 10 layers of multiple quantum well light emitting layer growing successively,
Every layer of multiple quantum well light emitting layer is formed to the ingan layer growing successively and gan layer by 2 ~ 8.
Further, in step s4, the growth temperature of every layer of multiple quantum well light emitting layer in superlattices multiple quantum well light emitting layer
It is to gradually rise upwards from substrate direction or reduce by 5 ~ 20 DEG C.
Below in conjunction with specific embodiment, the utility model is described in further detail.
Join shown in Fig. 3, the wide spectrum gan base led epitaxial structure in this utility model one specific embodiment, this led extension
Structure includes substrate 10 and the N-shaped gan layer 20 being located on substrate, stress release layer 30, superlattices multiple quantum well light emitting layer successively
40th, p-type algan electronic barrier layer 50 and p-type gan layer 60, is also formed with gan nucleating layer between substrate 10 and N-shaped gan layer 20
70th, gan cushion 80 and undoped u-gan layer 90.
Wherein, substrate 10 is Sapphire Substrate, and at least 5 layers MQW of inclusion of superlattices multiple quantum well light emitting layer 40 are sent out
Photosphere, half-breadth hw of different multiple quantum well light emitting layer is different, every layer of multiple quantum well light emitting layer by 5 pairs of ingan layers and gan layer according to
Secondary stacking composition.
Further, each pair ingan layer and the gross thickness of gan layer are 6 ~ 16nm, and the thickness of every layer of ingan layer is 2 ~ 6nm,
The thickness of every layer of gan layer is 4 ~ 13nm, and in ingan layer, in component content is 10% ~ 30%, to ensure superlattices multiple quantum well light emitting
Half-breadth hw of layer is 40 ~ 60nm.
In present embodiment, the manufacture method of wide spectrum gan base led epitaxial structure is specific as follows:
1st, Sapphire Substrate is placed on the graphite plate in mocvd reative cell, is annealed in hydrogen atmosphere, cleaning
Sapphire substrate surface, temperature control, between 1050 ~ 1100 DEG C, then carries out nitrogen treatment 1 ~ 3min；
2nd, by temperature drop between 500 ~ 550 DEG C, the thick gan nucleating layer of growth 15-25nm, growth pressure controls
500torr, between 80 ~ 120, at 600 revs/min, tmga is as ga source for graphite plate stabilization of speed for/mol ratio；
3rd, after the growth of gan nucleating layer terminates, carry out in-situ annealing process, growth thickness is the gan cushion of 0.5 ~ 1um；
4th, after gan buffer growth terminates, grow one layer of undoped u-gan layer；
5th, under the conditions of 1000 ~ 1200 DEG C, in Grown N-shaped gan layer；
6th, under the conditions of 800 ~ 820 DEG C, growth stress releasing layer on N-shaped gan layer.800 ~ 820 DEG C of this layer growth temperature, leads to
Cross low-temperature epitaxy and form 3-dimensional structure, so that current path is changed, reach more preferable CURRENT DISTRIBUTION effect；
7th, under the conditions of 760 ~ 800 DEG C, stress release layer grows 5 successively to ingan layer and gan layer, form Multiple-quantum
Trap luminescent layer, 5 layers of multiple quantum well light emitting layer of repeated growth, form superlattices multiple quantum well light emitting layer, wherein, every layer of MQW
The growth temperature difference of luminescent layer is 5 ~ 20 DEG C, and each pair ingan layer is 6 ~ 16nm with the gross thickness of gan layer, every layer of ingan layer
Thickness is 2 ~ 6nm, and the thickness of every layer of gan layer is 4 ~ 13nm, and in ingan layer, in component content is 10% ~ 30%, to ensure superlattices
Half-breadth hw of multiple quantum well light emitting layer is 40 ~ 60nm；
8th, under the conditions of 750 ~ 900 DEG C, p-type algan electronic barrier layer is grown on superlattices multiple quantum well light emitting layer；
9th, under the conditions of 800 ~ 1000 DEG C, p-type gan layer is grown on p-type algan electronic barrier layer.
Pass through in this utility model to control in the thickness of each pair ingan layer and gan layer, ingan layer in component content and
Each pair ingan layer and the growth temperature of gan layer, can adjust half-breadth hw of superlattices multiple quantum well light emitting layer.
Specifically, in present embodiment, superlattices multiple quantum well light emitting layer includes the first multiple quantum well light emitting from the top down
Layer, the second multiple quantum well light emitting layer, the 3rd multiple quantum well light emitting layer, the 4th multiple quantum well light emitting layer and the 5th multiple quantum well light emitting
Layer, the 5th multiple quantum well light emitting layer is gradually lowered 5 ~ 20 DEG C to the growth temperature of the first multiple quantum well light emitting layer by 800 DEG C, with 10
As a example DEG C, the growth temperature of the 5th multiple quantum well light emitting layer to the first multiple quantum well light emitting layer be respectively 800 DEG C, 790 DEG C, 780
℃、770℃、760℃.
It should be appreciated that present embodiment growth temperature is reduced with constant amplitude, can also be non-in other embodiments
Constant amplitude reduces, such as the growth temperature of the 5th multiple quantum well light emitting layer to the first multiple quantum well light emitting layer be respectively 800 DEG C, 795 DEG C,
785 DEG C, 775 DEG C, 760 DEG C, the growth temperature difference that only need to meet every layer of multiple quantum well light emitting layer is 5 ~ 20 DEG C.
Further, the growth temperature of the first multiple quantum well light emitting layer to the 5th multiple quantum well light emitting layer gradually rises 5 ~ 20
DEG C, such as the growth temperature of the 5th multiple quantum well light emitting layer to the first multiple quantum well light emitting layer be respectively 760 DEG C, 770 DEG C, 780 DEG C,
790 DEG C, 800 DEG C, it can raise for constant amplitude or non-constant amplitude raises, and no longer citing illustrates one by one herein.
In addition, above-mentioned five layers of multiple quantum well light emitting layer not necessarily will be gradually lowered according to growth temperature or raise arrangement,
5 layers of multiple quantum well light emitting layer of different growth temperatures can be arranged with independent assortment, and no longer citing is described in detail herein.
As can be seen from the above technical solutions, this utility model has the advantages that
Superlattices multiple quantum well light emitting layer includes the different multilamellar multiple quantum well light emitting layer of half-breadth hw, can reach wide spectrum
Effect, superlattices multiple quantum well light emitting layer half-breadth hw can be controlled between 40 ~ 60nm；Also frequency spectrum can be adjusted according to practical application
Scope, afforesting, the industry such as breed fish has a wide range of applications.
Wide spectrum gan base led epitaxial structure, described led epitaxial structure includes substrate and the N-shaped being located on substrate successively
Gan layer, stress release layer, superlattices multiple quantum well light emitting layer, p-type algan electronic barrier layer and p-type gan layer, its feature exists
In, the inclusion at least two-layer multiple quantum well light emitting layer of described superlattices multiple quantum well light emitting layer, different multiple quantum well light emitting layer
Half-breadth hw different.
It is obvious to a person skilled in the art that this utility model is not limited to the details of above-mentioned one exemplary embodiment, and
And in the case of without departing substantially from spirit or essential attributes of the present utility model, this practicality can be realized in other specific forms new
Type.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, this practicality is new
The scope of type is limited by claims rather than described above, it is intended that the containing of equivalency that will fall in claim
All changes in justice and scope are included in this utility model.Any reference in claim should not be considered as limiting
Involved claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment only wraps
Containing an independent technical scheme, only for clarity, those skilled in the art should for this narrating mode of description
Using description as an entirety, the technical scheme in each embodiment can also form those skilled in the art through appropriately combined
Understandable other embodiment.
Claims (5)
1. a kind of wide spectrum gan base led epitaxial structure, described led epitaxial structure includes substrate and the N-shaped being located on substrate successively
Gan layer, stress release layer, superlattices multiple quantum well light emitting layer, p-type algan electronic barrier layer and p-type gan layer, its feature exists
Include at least two-layer multiple quantum well light emitting layer in, described superlattices multiple quantum well light emitting layer, different multiple quantum well light emitting layer
Half-breadth hw is different, and every layer of multiple quantum well light emitting layer is made up of some being stacked gradually with gan layer to ingan layer.
2. wide spectrum gan base led epitaxial structure according to claim 1 is it is characterised in that described superlattices MQW
Luminescent layer includes 2 ~ 10 layers of multiple quantum well light emitting layer.
3. wide spectrum gan base led epitaxial structure according to claim 2 is it is characterised in that described multiple quantum well light emitting layer
Stacked gradually with gan layer by 2 ~ 8 pairs of ingan layers and form.
4. wide spectrum gan base led epitaxial structure according to claim 1 is it is characterised in that described multiple quantum well light emitting layer
Middle each pair ingan layer is 6 ~ 16nm with the gross thickness of gan layer, and the thickness of every layer of ingan layer is 2 ~ 6nm, the thickness of every layer of gan layer
For 4 ~ 13nm.
5. wide spectrum gan base led epitaxial structure according to claim 2 is it is characterised in that described superlattices MQW
Luminescent layer includes 5 layers of multiple quantum well light emitting layer, and half-breadth hw of superlattices multiple quantum well light emitting layer is 40 ~ 60nm.
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| CN201620524657.2U CN205900577U (en) | 2016-06-01 | 2016-06-01 | Wide spectrum gaN base LED epitaxial structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957929A (en) * | 2016-06-01 | 2016-09-21 | 聚灿光电科技股份有限公司 | Wide frequency spectrum GaN-based LED epitaxial structure and manufacturing method thereof |
| CN114899263A (en) * | 2022-05-25 | 2022-08-12 | 陕西科技大学 | InGaN/GaN superlattice structure solar cell epitaxial structure and preparation method thereof |
-
2016
- 2016-06-01 CN CN201620524657.2U patent/CN205900577U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957929A (en) * | 2016-06-01 | 2016-09-21 | 聚灿光电科技股份有限公司 | Wide frequency spectrum GaN-based LED epitaxial structure and manufacturing method thereof |
| CN114899263A (en) * | 2022-05-25 | 2022-08-12 | 陕西科技大学 | InGaN/GaN superlattice structure solar cell epitaxial structure and preparation method thereof |
| CN114899263B (en) * | 2022-05-25 | 2024-01-30 | 陕西科技大学 | InGaN/GaN superlattice structure solar cell epitaxial structure and preparation method thereof |
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| TR01 | Transfer of patent right |
Effective date of registration: 20211101 Address after: 223800 south of Dongwu Road, Suqian Economic and Technological Development Zone, Jiangsu Province Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) CO.,LTD. Address before: 215123 Xin Qing Road, Suzhou Industrial Park, Jiangsu Province, No. 8 Patentee before: FOCUS LIGHTINGS TECH Co.,Ltd. |
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| TR01 | Transfer of patent right |