CN205900574U - Intrinsic thin layer heterojunction HIT low temperature silver thick liquid curing equipment - Google Patents
Intrinsic thin layer heterojunction HIT low temperature silver thick liquid curing equipment Download PDFInfo
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- CN205900574U CN205900574U CN201620885891.8U CN201620885891U CN205900574U CN 205900574 U CN205900574 U CN 205900574U CN 201620885891 U CN201620885891 U CN 201620885891U CN 205900574 U CN205900574 U CN 205900574U
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Abstract
The embodiment of the utility model discloses intrinsic thin layer heterojunction HIT low temperature silver thick liquid curing equipment, wherein equipment includes: the furnace body, infrared spectrum heating device sets up in the furnace body for the silicon chip of predetermineeing thickness silver thick liquid is had through the internal brush of infrared spectrum heating furnace, exhaust apparatus is equipped with a plurality of mipor gas distribution passageways and is filled with the gaseous induction -pipe of atmosphere on intake pipe, conduit wall, set up exhaust device installation passageway on the furnace body wall of furnace body for through exhaust device installation passageway with the inside intercommunication of exhaust device with the furnace body, wherein, the one end of intake pipe is located the outside of furnace body, and the other end of intake pipe is worn to establish the furnace body wall of furnace body and is connected with the one end of gas distribution passageway, and the other end and the induction -pipe of gas distribution passageway are connected, and the induction -pipe sets up in the inside of furnace body, and the organic gas of the silicon chip production of heating is carry over out of to the atmosphere gas of gas distribution passageway, and is gaseous through exhaust device discharge organic gas and atmosphere.
Description
Technical field
This utility model is related to solar cell conductive silver paste field, more particularly, to a kind of intrinsic sheet hetero-junctions hit
Low temperature silver paste curing apparatus.
Background technology
Hit (heterojunction with intrinsic thin-layer, intrinsic sheet hetero-junctions) thickness 5～
10nm.Hit solaode is to clamp single crystals si with the i/n type a-si film of the p/i type a-si film of light irradiation side and rear side
Piece constituting.Hit solar-energy photo-voltaic cell substrate is based on silicon substrate；Deposit high energy gap (energy on a silicon substrate
Band gap) silicon nm thin film, top layer redeposition nesa coating, back surface has back surface electric field.By optimizing silicon
Surface texture, can reduce the optical absorption loss of oxidic, transparent, conductive layers (tco) and a-si layer.
Because hit battery preparation technique temperature is low, high conversion efficiency, the process time is short and high temperatures good feature, hit electricity
Pond material therefor leads to the material printing electrode can only adopt low temperature silver paste in high temperature, and battery surface prints conductive silver paste
Afterwards, need to be dried, then use not higher than 250 DEG C of curing process by silver paste and conductive layer (as tco, ito, iwo, imo,
Ic-h, zno, etc.) be effectively conductively connected.The method of the low temperature silver paste solidification that traditional industry adopts substantially employs hot blast
The method drying body of heater heating, this hot-air seasoning body of heater heats, and mainly adopts hot air circulation, hot-air seasoning and solidification in solidification
From the beginning of the surface of slurry, lead to the place that the organic gas of remnants is contacted with silicon chip surface from silver paste to escape, drive out of completely
Organic gas need the process time grown very much, and contact site can be led to form cavity, lead to process time length, solidification after
The problem that silver grating line pulling force is low, photoelectric transformation efficiency is low.
Utility model content
The purpose of this utility model embodiment is to provide a kind of intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus,
Silver grating line pulling force after shortening process time, lifting solidification and the conversion efficiency of solaode.
For reaching above-mentioned purpose, this utility model embodiment discloses a kind of hit low temperature silver paste curing apparatus, comprising:
Body of heater；
Infrared spectrum heater, is arranged in described body of heater, for heating the brush in described body of heater by infrared spectrum
There is the silicon chip of preset thickness silver paste；
Exhaust apparatus, is provided with the gas distribution passage of multiple micropores and is filled with sending of atmosphere gas including air inlet pipe, conduit wall
Trachea；
One air exhausting device installation passage is opened up on the furnace body wall of described body of heater, for by described air exhausting device installation passage
Air exhausting device is connected with the inside of described body of heater；
Wherein, one end of described air inlet pipe is located at the outside of described body of heater, and the other end of described air inlet pipe wears described stove
The furnace body wall of the body and one end with described gas distribution passage is connected, the other end of described gas distribution passage is connected with described snorkel, institute
State the inside that snorkel is arranged at described body of heater, the organic gas that the silicon chip heating is produced by the atmosphere gas of described gas distribution passage
Take out of, described organic gas and described atmosphere gas are discharged by described air exhausting device.
Preferably, described infrared spectrum heater includes: heat lamp；
Described body of heater, have spaced second body of heater portion including the first oven body part with and described first oven body part between
Point；
Described heat lamp is located inside internal or described second oven body part of described first oven body part.
Preferably, described gas distribution passage setting direction is consistent with the length direction of described body of heater；Or described gas distribution passage
Setting direction is consistent with the short transverse of described body of heater；Or described gas distribution passage setting direction and the width of described body of heater
Unanimously.
Preferably, described gas distribution passage is opened on the furnace body wall of described body of heater, wherein, being shaped as of described gas distribution passage
Rectangle or circle；Or
Described gas distribution passage is described gas distribution pipe, and wherein, described gas distribution pipe is straight tube or bend pipe, described gas distribution caliber cut
The area in the footpath section on the gas distribution pipe length direction generally circular in shape, described in face different and or the material of described gas distribution pipe be
Pottery, plastics, carbon fiber, glass or metal material；
The arrangement mode that the plurality of micropore is located on the tube wall of described gas distribution pipe is uneven arrangement mode or uniformly
Arrangement mode with or the plurality of micropore each micropore diameter different；
Described atmosphere gas are compressed air or nitrogen.
Preferably, described intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus also include:
The driving means being connected with described body of heater, comprising: the first drive roll, motor, driving belt, driver element
And, wear the furnace body wall of described body of heater and run through the transmission belt of described body of heater；
Wherein, described motor is connected with described first drive roll, and described driving belt is wrapped in described first actively
On second drive roll of roller and described driver element, described transmission belt is wrapped in described second drive roll and described driver element
At least one live-roller on, described transmission belt and described driving belt are wrapped in the diverse location on described second drive roll
Place；Described motor drives described first drive roll to rotate, and drives described driving belt, described second drive roll, institute successively
State at least one live-roller, described transmission belt rotates.
Preferably, the footpath area of section of the center of gravity of described first drive roll cuts less than the footpath at described first drive roll two ends
Face area；With or
The footpath area of section of the center of gravity of described second drive roll is less than the footpath area of section at described second drive roll two ends；
With or
The footpath area of section of the center of gravity of at least one live-roller described is less than the footpath at least one live-roller two ends described
Area of section.
Preferably, described driver element at least also includes: driver element support, at least one transmission of described driver element
The first live-roller in roller, plain bearing housing, spring and stop screw；
Wherein, described driver element support has a limited impression, described plain bearing housing is at least partially arranged at institute
State in limited impression, the roller head of described first live-roller is located in described limited impression and is connected to holding of described plain bearing housing
On section；
Described stop screw penetrates described driver element support and is arranged on plain bearing housing, and described spring housing is located at institute
State on stop screw, described stop screw place direction is perpendicular to described first live-roller place direction, described plain bearing housing
Loading end equal with the groove surface of described limited impression, the groove surface of described limited impression is more than the roller of described first live-roller
Head and the contact surface of described plain bearing housing；
Two kinds of working conditions of described driver element include: described spring is in spring original length state, described slip
There is between bearing block and described limited impression the state in gap；
Described stop screw rotates, and described spring is in spring-compressed state, by positioned at described loading end and described the
Bearing between the roller head of one live-roller, described first live-roller is to described driver element support gap described in gravity motion
Length distance, the state that described plain bearing housing is fitted with described limited impression.
Preferably, described body of heater includes the second body of heater portion of the first oven body part connection relative with described first oven body part
Point, and the contact surface between the furnace body wall of the furnace body wall of described first oven body part and described second oven body part is formed with two
The first relative opening, wherein, described two the first relative openings respectively transmit described transmission belt inlet port and with
The corresponding outlet of described inlet port.
Preferably, described intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus also include:
Clean chamber, is embedded on the furnace body wall inwall of described body of heater, and the cavity volume in described cleaning chamber is less than described body of heater
Body of heater volume, described cleaning chamber offers two the second relative openings, wherein, described second opening and described first opening
It is adapted；
Described exhaust apparatus and described transmission belt are also provided at described cleaning intracavity portion, and the other end of described air inlet pipe is also
Wear the described cleaning inwall in chamber and is connected with one end of described gas distribution pipe, the other end of described gas distribution pipe and described snorkel
One end connects, and the other end of described snorkel wears the inwall in described cleaning chamber to the first body of heater portion being provided with heat lamp
Point.
Preferably, the material of described transmission belt includes: polyether-ether-ketone, politef, CTFE, polyvinylidene fluoride
Alkene, polyvinylidene chloride, polyformaldehyde, polyamide, polystyrene, polyethylene, engineering plastics, polymethyl methacrylate, poly- fluorine
One or more of ethylene, nylon, polysulfones, polyphenylene oxide, epoxy material, synthetic material, pottery, carbon fiber, tungsten alloy filament.
As seen from the above technical solutions, this utility model embodiment provides a kind of intrinsic sheet hetero-junctions hit low temperature
Silver paste curing apparatus, are heated to the silicon chip being brushed with silver paste by infrared spectrum heater, make remnants organic gas from
Effusion elsewhere beyond silver paste and silicon chip surface contact position, shortens the process time, improves the silver grating line after solidification
Pulling force and the conversion efficiency of solaode.Certainly, implement arbitrary product of the present utility model or method must be not necessarily required to together
When reach all the above advantage.
Brief description
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art, below will be to this practicality
In new embodiment or description of the prior art the accompanying drawing of required use be briefly described it should be apparent that, below describe in
Accompanying drawing be only some embodiments of the present utility model, for those of ordinary skill in the art, do not paying creativeness
On the premise of work, other accompanying drawings can also be obtained according to these accompanying drawings.
A kind of intrinsic film heterojunction hit low temperature silver paste curing apparatus structure that Fig. 1 provides for this utility model embodiment
Schematic diagram；
A kind of heat lamp schematic device that Fig. 2 provides for this utility model embodiment；
A kind of structure of driving unit schematic diagram that Fig. 3 provides for this utility model embodiment；
A kind of driver element cross-sectional view that Fig. 4 provides for this utility model embodiment；
One kind of the method for the intrinsic film heterojunction hit low temperature silver paste solidification that Fig. 5 provides for this utility model embodiment
Schematic flow sheet；
The method of a kind of intrinsic film heterojunction hit low temperature silver paste solidification that Fig. 6 provides for this utility model embodiment
Process curve figure.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely description is it is clear that described embodiment is only a part of embodiment of this utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under the premise of making creative work
The every other embodiment being obtained, broadly falls into the scope of this utility model protection.
This utility model embodiment discloses a kind of intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus, below carries out
Describe in detail.
A kind of intrinsic sheet hetero-junctions hit low temperature silver paste solidification providing for this utility model embodiment referring to Fig. 1, Fig. 1
Device structure schematic diagram, comprising:
Part I, body of heater 1.
Part II, infrared spectrum heater, it is arranged in body of heater 1, for by infrared spectrum heating furnace body
It is brushed with the silicon chip 18 of preset thickness silver paste 17, here with silicon chip 18, this infrared spectrum is absorbed heat than silver paste 17 to this infrared spectrum
The fast feature of heat absorption, to realize the thermograde of silver paste 17.
Here infrared spectrum heater can be heat lamp or infrared hot plate, infrared heating
Pipe etc. is any can be realized heating generation infrared spectrum to the silicon chip 18 being brushed with preset thickness silver paste 17, so that silicon chip 18 is red to this
The external spectrum heat absorption device faster to the heat absorption of this infrared spectrum than silver paste 17, belongs to the protection domain of this utility model embodiment,
Here differs a citing.
Here preset thickness be the demand of electric conductivity according to silver paste 17 and user being set, this default thickness
Degree is so that reaching required electric conductivity after silver paste 17 solidification, and wherein, silver paste 17 typically adopts preparation under different condition
The flake silver powder of different shape, variety classes resinite, surface dispersant and Organic substance are constituted, the solidification temperature of general low temperature silver paste
Degree, curing etc. have large effect to low-temperature solidified silver paste electrical property.
Part III, exhaust apparatus, it is provided with the gas distribution passage of multiple micropores and is filled with gas including air inlet pipe 3, conduit wall
The snorkel 5 of atmosphere gas.
Wherein, the furnace body wall of body of heater 1 opens up an air exhausting device installation passage 7, for by air exhausting device installation passage 7
Air exhausting device is connected with the inside of body of heater 1.
One end of air inlet pipe 3 is located at the outside of body of heater 1, and the other end of air inlet pipe 3 wears furnace body wall and and the gas distribution of body of heater 1
One end of passage connects, and the other end of gas distribution passage is connected with snorkel 5, and snorkel 5 is arranged at the inside of body of heater 1, by cloth
The organic gas that the silicon chip 18 of heating is produced by the atmosphere gas of gas passage is discharged, here, by air inlet pipe 3 by atmosphere gas
Deliver in gas distribution passage, then through snorkel 5, the atmosphere gas in gas distribution passage are distributed in body of heater 1, atmosphere gas here
The organic gas that silver paste 17 evaporates is conducive to carry discharge, subsequent atmosphere gas carry organic gas and arrange through air exhausting device
Go out, air exhausting device here can be fan, or other can be primarily used to discharge the gas in body of heater 1 with the device of air draft
Body.
Preferably, in the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment, infrared spectrum
Heater includes: heat lamp 6, wherein, is provided with multiple heat lamps 6, by infrared in infrared spectrum heater
Infrared spectrum energy in heating lamp 6 heats to the silicon chip 18 being brushed with preset thickness silver paste 17 in body of heater, is conducive to being brushed with
The uniform heating of the silicon chip 18 of preset thickness silver paste 17, in addition, the region of heat lamp 6 heating can arrange several heating temperature
Area, to reach technological design curve of the present utility model.
Preferably, the body of heater 1 in the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment,
Have spaced second oven body part 20 including the first oven body part 19 with and the first oven body part 19 between, this two parts both may be used
To be to be integrally formed or first process respectively, then re-form a body of heater, wherein, heat lamp 6 is located at the first stove
Inside body portion 19 inside or the second oven body part 20.
Preferably, the gas distribution in the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment leads to
Road setting direction is consistent with the length direction of body of heater 1；Or gas distribution passage setting direction is consistent with the short transverse of body of heater 1；Or
Person's gas distribution passage setting direction is consistent with the width of body of heater 1, and the effect of gas distribution passage here is uniformly to send atmosphere gas
To in body of heater 1.
Preferably, gas distribution passage is opened on the furnace body wall of body of heater 1, gas distribution passage be shaped as rectangle or circle.
Preferably, gas distribution passage is gas distribution pipe 4；
Wherein, gas distribution pipe 4 is straight tube or bend pipe；With or
Gas distribution pipe 4 footpath section generally circular in shape；With or
The area in the footpath section on described gas distribution pipe 4 length direction is different；With or
The material of gas distribution pipe 4 is pottery, plastics, carbon fiber, glass or metal material；With or
The arrangement mode that multiple micropores are located on the tube wall of gas distribution pipe 4 is uneven arrangement mode or evenly distributed side
Formula, the tube wall of whole gas distribution pipe 4 here can be all have micropore or part to have micropore, can also be that other are each
Plant mode of micropore interval arrangement etc.；With or
The diameter of each micropore of multiple micropores is different；With or
Atmosphere gas be compressed air or nitrogen or other be conducive to will in silver paste 17 volatilization organic gas
Carry the atmosphere gas of discharge.
Gas distribution pipe 4 in the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment is provided with
Micropore achieve uniform air-flow introduction method, in this method atmosphere gas enter through the gas distribution passage with micropore clean
Cavity and non-immediate supplied gas by gas distribution passage, so can make atmosphere gas highly uniform entrance cleaning cavity, subtract simultaneously
Lack the usage amount of atmosphere gas.
Preferably, the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment also include:
The driving means being connected with body of heater 1, comprising: the first drive roll 11, motor 12, driving belt 13, driving are single
Unit 16 and, wear the furnace body wall of body of heater 1 and run through the transmission belt 9 of body of heater 1.
Wherein, motor 11 is connected with the first drive roll 12, and driving belt 13 is wrapped in the first drive roll 11 and drives
On second drive roll 15 of unit 16, transmission belt 9 is wrapped at least one transmission of the second drive roll 15 and driver element 16
On roller 10, transmission belt 9 and driving belt 13 are wrapped on the second drive roll 15 various location；Motor 12 drives the
One drive roll rotates 11, drives driving belt 13, the second drive roll 15, at least one live-roller 10,9 turns of transmission belt successively
Dynamic, driving means here are used for for the chip transmission on transmission belt 9 entering clean chamber 2.
Wherein, the driving means being connected with body of heater 1 are also included: be arranged at patch on the cylinder surface on drive roll and live-roller
Conjunction has line with rubber, and cylinder line with rubber can be effectively improved the operation conditions of induction system, protect metal roller not to be worn, prevent conveyer belt
Skidding, make cylinder and belt run-in synchronism, thus ensureing that belt is efficient, the operating of large conveying quantity, cylinder line with rubber can also be effective
The sliding friction preventing between cylinder and belt, reduce cylinder surface materials from bonding, thus reducing sideslip and the mill of belt
Damage, the line with rubber of cylinder can adopt natural rubber, natural rubber, nitrile rubber, neoprene, ethylene propylene diene rubber, polyurethane etc..
Preferably, the footpath area of section of the center of gravity of the first drive roll 11 is less than the footpath section face at the first drive roll 11 two ends
Long-pending；With or
The footpath area of section of the center of gravity of the second drive roll 15 is less than the footpath area of section at the second drive roll 15 two ends；With
Or
The footpath area of section of the center of gravity of at least one live-roller 10 is less than the footpath section at least one live-roller 10 two ends
Area, this ensure that belt on drive roll and live-roller not sideslip in transmitting procedure.
Preferably, the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus in this utility model embodiment include first
Second oven body part 20 of oven body part 19 and the relative connection of the first oven body part 19, and the furnace body wall of the first oven body part 19 with
Contact surface between the furnace body wall of the second oven body part 20 is formed with two the first relative openings, wherein, two relative
One opening is respectively the inlet port transmitting transmission belt 9 and the outlet corresponding with inlet port.
Preferably, the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus in this utility model embodiment also include:
Chiller 8, outside the outlet of body of heater 1, for cooling down on transmission belt 9 silicon chip 18, cooling here
Device 8 is mainly the cooling realizing silicon chip 18 by the cold wind in device, and silicon chip 18 is sent out clean chamber 2 in vitro, reaches cold
But, below device 8, in the presence of cold wind, silicon chip 18 is gradually cooled to take off.
Preferably, the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus of this utility model embodiment also include:
Clean chamber 2, is embedded on the furnace body wall inwall of body of heater 1, and the cavity volume in clean chamber 2 is less than the body of heater body of body of heater 1
Long-pending, clean chamber 2 offers two the second relative openings, and wherein, the second opening is adapted with the first opening, clean chamber here
2 is only the effect that body of heater 1 is played with cleaning.
Exhaust apparatus and transmission belt 9 are also provided inside clean chamber 2, and the other end of air inlet pipe 3 also wears clean chamber 2
The inwall and one end with gas distribution pipe 4 is connected, the other end of gas distribution pipe 4 is connected with one end of snorkel 5, the other end of snorkel 5
To the first oven body part 19 being provided with heat lamp 6, exhaust apparatus is mainly used to clean chamber the inwall wearing clean chamber 2
The organic gas that atmosphere gas in 2 carry in body of heater 1 is discharged, here because clean chamber 2 can be made up of quartz piece, and infrared
Spectrum can penetrate quartz, and therefore heat lamp 6 installation site is no matter body of heater 1 is built-in does not fill clean chamber 2 and all do not change.If clean
Net chamber 2 adopts other materials, such as: aluminum, rustless steel, glass, gold, silver, copper, ferrum, tungsten, molybdenum, nickel, other kinds metal or metal close
When golden material, pottery, carbon or carbon fiber, temperature resistant plastic, other inorganic material, because infrared spectrum cannot penetrate, so
Heat lamp 6 is arranged in clean chamber 2, here the material in clean chamber 2 is met in selection with heatproof and exceedes technological temperature, clean
Only, all materials of the condition of low heat capacity, belong to the protection domain of this utility model embodiment, and here differs a citing.
Preferably, the material of transmission belt 9 includes: peek (polyetheretherketone, polyether-ether-ketone), ptfe
(polytetrafluoroethylene, politef), ctfe (chlorotrifluorethene, CTFE),
(polyvinylidene chloride gathers inclined two for pvdf (poly vinylidene fluoride, Kynoar), pvdc
Vinyl chloride), pom (polyoxymethylene, polyformaldehyde), pa (polyamide, polyamide), ps (polystyrene, polyphenyl
Ethylene), pe (polyethylene, polyethylene), abs (acrylonitrile butadiene styrene, acrylonitrile-benzene second
Alkene-butadiene copolymer), pmma (polymethylmethacrylate, polymethyl methacrylate), pvf (poly vinyl
Formal, polyvinyl fluoride), nylon (nylon), polysulfones (poly-sulfone), ppo (polyphenylene oxide, polyphenyl
Ether), epoxy material, material modified, one or more of synthetic material, pottery, carbon fiber, tungsten alloy filament, wherein, epoxy material
Material can be epoxy resin etc., and synthetic material can be plastics, glass, iron and steel etc., and the material of transmission belt 9 can also include respectively
Plant material modified, as modified pa (polyamide, polyamide) material, modified pp (polypropylene, polypropylene) material, change
Property pc (polycarbonate, Merlon) material, modified abs (acrylonitrile butadiene styrene, propylene
Nitrile-SB) material, modified pbt (poly butylene terephthalate, poly terephthalic acid
Butanediol ester) material etc..Here the material to transmission belt 9 meets heatproof in selection and exceedes technological temperature, cleaning, low grade fever
All materials of the condition held, belong to the protection domain of this utility model embodiment, and here differs a citing.Wherein, clean
Feature silicon chip contact surface will not be produced with the pollution of impact electrical property or impact outward appearance, the feature of low heat capacity do not interfere with silicon
The temperature rise of piece 18, temperature drop and thermograde, so could more stable realizing the solidification of hit low temperature silver paste.
A kind of heat lamp schematic device providing for this utility model embodiment referring to Fig. 2, Fig. 2；
This heat lamp 6 is placed on the first oven body part 19 or the second oven body part 20, wherein, the first oven body part
19 can therefore be referred to as upper furnace body as shown in figure 4, being in the top of transmission belt 9 in whole body of heater.
Second oven body part 20 can therefore can also as shown in figure 4, being in the lower section of transmission belt 9 in whole body of heater
Referred to as lower furnace body.
A kind of structure of driving unit schematic diagram providing for this utility model embodiment referring to Fig. 3 and Fig. 4, Fig. 3, Fig. 4 is
The cross-sectional view of a-a in Fig. 3.
Preferably, driver element 16 at least also includes: driver element support 168, at least one transmission of driver element 16
The first live-roller 14 in roller 10, plain bearing housing 167, spring 163 and stop screw 164.
Wherein, driver element support 168 has a limited impression 162, plain bearing housing 167 is at least partially arranged at limit
In the groove 162 of position, the roller head of the first live-roller 14 is located in limited impression 162 and is connected to the loading end of plain bearing housing 167
On 161.
Stop screw 164 penetrates driver element support 168 and is arranged on plain bearing housing 167, and spring 163 is sheathed on limit
On the screw 164 of position, stop screw 164 place direction is perpendicular to the first live-roller 14 place direction, the carrying of plain bearing housing 167
Face 161 is equal with the groove surface of limited impression 162, and the groove surface of limited impression 162 is more than roller head and the cunning of the first live-roller 14
The contact surface 166 of moving axis bearing 167.
Two kinds of working conditions of driver element 16 include: spring 163 is in spring original length state, plain bearing housing
There is between 167 and limited impression 162 state in gap, now transmission belt 9 is in relaxed state, the transmission skin of relaxed state
Band 9 is convenient to be installed.
Stop screw 164 rotates, and spring 163 is in spring-compressed state, by positioned at loading end 161 and the first live-roller
Bearing 165 between 14 roller head, the length distance in the gravity motion gap to driver element support 168 for first live-roller 14,
The state that plain bearing housing 167 is fitted with limited impression 162, now transmission belt 9 be in tensioning state, the biography of tensioning state
Defeated belt 9 is conducive to belt to carry out normal transmission.
From above-mentioned intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus, this utility model embodiment is mainly led to
The transmission belt 9 of installation is changed into tensioning state from relaxed state by over-drive unit 16, under the driving of motor 12, transmission
Silicon chip 18 on belt 9 is transferred into body of heater 1, in the presence of heat lamp 6 in body of heater 1, silicon chip 18 is solidified, Gu
Organic gas is volatilized, the atmosphere gas in gas distribution pipe 4 in body of heater 1 carry organic gas through air exhausting device in silver paste during change
Discharge, the silicon chip 18 being brushed with preset thickness silver paste 17 that transmission belt 9 is cured is transferred to outside body of heater, finally by cooling dress
Put 8 pairs of silicon chips 18 to cool down, complete whole curing process.As can be seen here, by this utility model embodiment provide intrinsic
Thin layer hetero-junctions hit low temperature silver paste curing apparatus, shorten the process time, improve silver grating line pulling force and the hit sun after solidification
The conversion efficiency of energy battery, possesses good economic benefit and promotion prospect.
The side of the intrinsic sheet hetero-junctions hit low temperature silver paste solidification providing for this utility model embodiment referring to Fig. 5, Fig. 5
A kind of schematic flow sheet of method, comprises the steps:
Step 501, infrared spectrum heating is brushed with the silicon chip of preset thickness silver paste.
The firing equipment of the silicon chip that the heating of this utility model embodiment infrared spectrum is brushed with preset thickness silver paste can be red
Additional thermolamp or infrared hot plate, infrared ray heating tube, any can realize to the silicon chip being brushed with preset thickness silver paste
Heating produces infrared spectrum, the device faster to the heat absorption of this infrared spectrum than silver paste so that silicon chip absorbs heat to this infrared spectrum, all belongs to
In the protection domain of this utility model embodiment, here differs a citing.
Here, infrared spectrum heating is brushed with the silicon chip of preset thickness silver paste, mainly make use of silicon chip to this infrared spectrum
The heat absorption feature faster to the heat absorption of this infrared spectrum than silver paste, realizes the warming temperature gradient of silver paste, that is, silver paste contacts position with silicon chip
The temperature put is higher than the temperature on silver paste surface.
Here preset thickness be the demand of electric conductivity according to silver paste and user being set, this preset thickness
It is so that reaching required electric conductivity after silver paste solidification, wherein, silver paste typically adopts the not similar shape of preparation under different condition
The flake silver powder of state, variety classes resinite, surface dispersant and Organic substance are constituted, the solidification temperature of general low temperature silver paste, solid
Change method etc. has large effect to low-temperature solidified silver paste electrical property.
Step 502, the temperature of heating silicon chip is higher than the temperature of silver paste, and silicon chip is higher than silver paste with the temperature of silver paste contact position
The temperature on surface, and the resin in silver paste is in partly to melt state, so that in the other positions effusion silver paste in addition to contact position
The organic gas in portion.
Here, because silicon chip is faster to the heat absorption of this infrared spectrum than silver paste to the heat absorption of this infrared spectrum, so
In heating process, the temperature of silicon chip is higher than the temperature of silver paste, then the temperature of silver paste is first delivered to silver paste by the temperature of silicon chip and connects
Tactile position, so that the temperature of silicon chip and silver paste contact position is higher than the temperature on silver paste surface, silver paste in heating process simultaneously
In resin be in partly to melt state, be conducive to the organic gas in silver paste volatilize, and because the temperature of silicon chip and silver paste contact position
Higher than the temperature on silver paste surface, lead to the organic gas evaporating in silver paste from its in addition to silicon chip with silver paste contact position
He escapes position, decreases the time of liberation of silicon chip and silver paste contact site organic gas.
Step 503, the resin in silver paste being in partly to melt state covers silicon chip formation bonded structure.
Here, due to the organic gas that evaporates in silver paste in heating process from except silicon chip and silver paste contact position with
Outer other positions effusion, so the resin in silver paste being in partly to melt state is easier covering on silicon chip, is more likely formed bonding knot
Structure, thus improve the pulling force of silver grating line.
Step 504, cools down bonded structure, obtains the silicon chip with solidification silver paste.
Specifically, the bonded structure that the position that in cooling silver paste, the resin in partly to melt state is contacted with silicon chip is formed, obtains
There is the silicon chip of solidification silver paste, facilitate the use of later stage silicon chip, finally give the hit solaode being cured.
As can be seen here, the method being heated by infrared spectrum, using the silicon chip heat absorption feature faster than silver paste, realizes silver paste
Warming temperature gradient, that is, silver paste is high with the temperature of silicon chip contact position, and the temperature on silver paste surface is low, so leads to remain in silver paste
From the other positions effusion except silicon chip and silver paste contact position, effusion surface area increases interior organic gas, and is not result in silver
Slurry and silicon chip contact site form cavity, and the process time declines, the silver grating line pulling force lifting after solidification, the conversion of solaode
Efficiency is also lifted.
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, by red
External spectrum heating is brushed with the silicon chip of preset thickness silver paste, comprising:
The infrared spectrum being sent by the infrared heating pipe of heat lamp, is carried out to the silicon chip being brushed with preset thickness silver paste
Heating, wherein, in 750nm to 4000nm wave-length coverage, within this range, heated at constant temperature is brushed with default the wavelength of infrared spectrum
The silicon chip of thickness silver paste, silicon chip is faster to the heat absorption of this infrared spectrum than silver paste to the heat absorption of this infrared spectrum, is more beneficial for reality
The thermograde of existing silver paste.
Because hit solaode uses a-si to constitute p-n junction, it is possible to the low temperature below 250 DEG C completes entirely
Operation, about compares in 900 DEG C of temperature compared to the formation of the crystallization solar cell of thermal diffusion type, system is greatly reduced
Make the temperature of technique.Due to the symmetric construction of this p-n junction and the feature of low temperature process, decrease because when heat or film formation
Produce the deformation of si chip and hot injury, to realize chip lightening and efficient for be favourable, have industry lead
First high conversion efficiency, such as MAT, after purchase Sanyo in 2009, continue the exploitation of hit battery, laboratory
Highest conversion efficiency reaches 24.7% (voc=750mv, jsc=39.5ma/cm2, ff=83.2%), and volume production average efficiency reaches
22.5%, even if at high temperature, conversion efficiency also seldom reduces, and improves generated energy using double surface unit.
Preferably, in order to improve technique, in the curing process obtaining the silicon chip with solidification silver paste, do thermograde.
A kind of intrinsic sheet hetero-junctions hit low temperature silver paste solidification providing for this utility model embodiment referring to Fig. 6, Fig. 6
Method process curve figure, wherein, curing process temperature is set to three warm areas: the first low-temperature space, high-temperature region, the second low temperature
Area, specifically includes:
First low-temperature space as shown in Figure 6, the first low-temperature space is the Organic substance volatilization area being brushed with preset thickness silver paste,
Main purpose is so that the resin material in silver paste is softened, and this can make the organic gas remaining in silver paste faster escape from silver paste
Go out, and so that silicon chip is bonding with silver paste contact position more firm, because the formula of different silver paste production firms is different,
So the temperature of the first low-temperature space will adjust its technological temperature according to the formula of silver paste, usual first low-temperature space is at 120 DEG C extremely
Within the temperature range of 220 DEG C, set temperature is conducive to organic gas volatilization in silver paste.Wherein, the first low-temperature space shown in Fig. 6
Temperature curve be only to illustrate, actual temperature generally has temperature step according to the practical situation that silicon temperature rises.
High-temperature region as shown in Figure 6, high-temperature region is the curing area of the silicon chip being brushed with preset thickness silver paste, and this high-temperature region sets
Constant temperature degree is low-temperature silver slurry silver paste solidification temperature recommended by the manufacturer, the slurry of the different lot numbers that different silver paste manufacturers produces due to
Formula is different, and solidification temperature is different, and the recommendation solidification temperature of low-temperature pulp is generally at 140 DEG C to 220 in the market
Within the temperature range of DEG C, set temperature is to be conducive to silver paste quickly to solidify.
Second low-temperature space as shown in Figure 6, the second low-temperature space is the cooling zone of the silicon chip being brushed with preset thickness silver paste, the
Within the temperature range of 70 DEG C to 220 DEG C, set temperature is conducive to being brushed with the silicon chip of preset thickness silver paste two low-temperature spaces
Cooling.Wherein, the temperature curve of the second low-temperature space shown in Fig. 6 is only to illustrate, the reality that actual temperature rises according to silicon temperature
Situation generally has temperature step.
Wherein, the control of each warm area temperature adopts pid temperature control, detects actual temperature, temperature by temperature probe
Control can be temperature control instrument or be controlled using Programmable Logic Controller (plc) etc..
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, by red
External spectrum heating is brushed with the silicon chip of preset thickness silver paste, specifically includes:
First, the first low-temperature space being formed by the infrared spectrum of heat lamp, is heated to silicon chip, heats here
The temperature of silicon chip is higher than the temperature of silver paste afterwards, and the temperature of silicon chip and silver paste contact position is higher than the temperature on silver paste surface, and silver paste
In resin be in partly to melt state, be more beneficial for the as far as possible many discharges of organic gas in silver paste, silicon chip contacts position with silver paste simultaneously
The temperature put is higher than that the temperature on silver paste surface leads to the organic gas within silver paste from addition to silicon chip with silver paste contact position
Other positions escape.
Secondly, after the first low-temperature space heats silicon chip, by the high-temperature region of the infrared spectrum formation of heat lamp, right
The silicon chip of the first warm area heating is solidified, and wherein, the temperature of the first low-temperature space is less than the temperature of high-temperature region, is so conducive to silver
In slurry organic gas volatilization, here due to silver paste after the heating of the first warm area by organic for the major part in silver paste gas
Body is discharged, so high-temperature region here is more beneficial for the fast setting of silver paste, thus will be in the resin coating of partly to melt state in silver paste
Lid silicon chip forms bonded structure.
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, cooling is viscous
Access node structure, obtains the silicon chip with solidification silver paste, comprising:
After the silicon chip after the solidification of high-temperature region, by the second low-temperature space of the infrared spectrum formation of heat lamp, right
Silicon chip after the solidification of high-temperature region is cooled down, and wherein, the temperature of the second low-temperature space is less than the temperature of the first low-temperature space, is conducive to silver
Slurry and the cooling of silicon chip.
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, heat silicon
The temperature of piece is higher than the temperature of silver paste, and the temperature of silicon chip and silver paste contact position is higher than the temperature on silver paste surface, and in silver paste
Resin is in partly to melt state, so that the other positions beyond contact position escape the organic gas within silver paste, comprising:
When silicon chip being heated by the first low-temperature space being formed in heat lamp, the temperature of heating silicon chip is higher than silver
The temperature of the temperature of slurry, silicon chip and silver paste contact position is higher than the temperature on silver paste surface, and the resin in silver paste is in partly to melt state,
So that escaping the organic gas within silver paste from the other positions in addition to contact position, wherein, the first low-temperature space is at 120 DEG C extremely
Within the temperature range of 220 DEG C, set temperature is conducive to organic gas volatilization in silver paste.
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, in silver paste
Resin in partly to melt state covers silicon chip and forms bonded structure, comprising:
The high-temperature region being formed by heat lamp, is solidified to the silicon chip after the first low-temperature space heating, by silver paste
Resin in partly to melt state covers silicon chip and forms bonded structure, wherein, high-temperature region within the temperature range of 140 DEG C to 220 DEG C, institute
The temperature setting quickly solidifies as being conducive to silver paste.
Preferably, in the method for intrinsic sheet hetero-junctions hit low temperature silver paste solidification of this utility model embodiment, cooling is viscous
Access node structure, obtains the silicon chip with solidification silver paste, comprising:
The second low-temperature space being formed by heat lamp, to the bonded structure after solidifying high-temperature region and be brushed with default thickness
The silicon chip of degree silver paste is cooled down, and obtains having the silicon chip of solidification silver paste, and wherein, the second low-temperature space is in 70 DEG C to 220 DEG C of temperature
In the range of degree, set temperature is conducive to being brushed with the cooling of the silicon chip of preset thickness silver paste.
Preferably, the following is the data of actual large-scale production, as shown in table 1 below.
Table 1
It can be seen that, battery efficiency rises 0.46%, and volume production data proves improved efficiency more than 0.4%.
From the method for above-mentioned intrinsic sheet hetero-junctions hit low temperature silver paste solidification, this utility model embodiment is main
Overcome process time length present in traditional intrinsic sheet hetero-junctions hit curing process, solidification after silver grating line pulling force low and
The low shortcoming of conversion efficiency of solar cell, decreases the time of gas discharge, shortens the process time with new method, and by
After gas effusion, the contact position of silicon chip and silver paste is not easily formed cavity, improves after solidification silver grating line pulling force and intrinsic
The conversion efficiency of thin layer hetero-junctions hit solaode, possesses good economic benefit and promotion prospect.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation are made a distinction with another entity or operation, and not necessarily require or imply these entities or deposit between operating
In any this actual relation or order.And, term " inclusion ", "comprising" or its any other variant are intended to
Comprising of nonexcludability, wants so that including a series of process of key elements, method, article or equipment and not only including those
Element, but also include other key elements being not expressly set out, or also include for this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element that limited by sentence "including a ..." it is not excluded that
Also there is other identical element including in the process of described key element, method, article or equipment.
Each embodiment in this specification is all described by the way of related, identical similar portion between each embodiment
Divide mutually referring to what each embodiment stressed is the difference with other embodiment.Real especially for system
For applying example, because it is substantially similar to embodiment of the method, so description is fairly simple, referring to embodiment of the method in place of correlation
Part illustrate.
The foregoing is only preferred embodiment of the present utility model, be not intended to limit protection model of the present utility model
Enclose.All any modification, equivalent substitution and improvement made within spirit of the present utility model and principle etc., are all contained in this reality
With in new protection domain.
Claims (10)
1. a kind of intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus are it is characterised in that include:
Body of heater (1)；
Infrared spectrum heater, is arranged in described body of heater (1), for being heated in described body of heater (1) by infrared spectrum
It is brushed with the silicon chip (18) of preset thickness silver paste (17)；
Exhaust apparatus, is provided with the gas distribution passage of multiple micropores and is filled with supplying gas of atmosphere gas including air inlet pipe (3), conduit wall
Pipe (5)；
One air exhausting device installation passage (7) is opened up on the furnace body wall of described body of heater (1), logical for being installed by described air exhausting device
Air exhausting device is connected by road (7) with the inside of described body of heater (1)；
Wherein, one end of described air inlet pipe (3) is located at the outside of described body of heater (1), and the other end of described air inlet pipe (3) wears institute
State the furnace body wall of body of heater (1) and be connected with one end of described gas distribution passage, the other end of described gas distribution passage and described snorkel
(5) connect, described snorkel (5) is arranged at the inside of described body of heater (1), the silicon that the atmosphere gas of described gas distribution passage will heat
The organic gas that piece (18) produces is taken out of, discharges described organic gas and described atmosphere gas by described air exhausting device.
2. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 1 are it is characterised in that described infrared
Spectrum heater includes: heat lamp (6)；
Described body of heater (1), have spaced including the first oven body part (19) with and described first oven body part (19) between
Two oven body part (20)；
It is internal that described heat lamp (6) is located at internal or described second oven body part (20) of described first oven body part (19).
3. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 1 are it is characterised in that described gas distribution
Passage setting direction is consistent with the length direction of described body of heater (1)；Or described gas distribution passage setting direction and described body of heater (1)
Short transverse consistent；Or described gas distribution passage setting direction is consistent with the width of described body of heater (1).
4. the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as described in claim 1,2 or 3 are it is characterised in that described
Gas distribution passage is opened on the furnace body wall of described body of heater (1), wherein, described gas distribution passage be shaped as rectangle or circle；Or
Person
Described gas distribution passage is described gas distribution pipe (4), and wherein, described gas distribution pipe (4) is straight tube or bend pipe, described gas distribution pipe
(4) area in the footpath section on generally circular in shape, described gas distribution pipe (4) length direction in footpath section different and or described gas distribution
The material of pipe (4) is pottery, plastics, carbon fiber, glass or metal material；
The arrangement mode that the plurality of micropore is located on the tube wall of described gas distribution pipe (4) is uneven arrangement mode or uniform row
Row mode with or the plurality of micropore each micropore diameter different；
Described atmosphere gas are compressed air or nitrogen.
5. the intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as described in claim 1,2 or 3 are it is characterised in that described
Intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus also include:
The driving means being connected with described body of heater (1), comprising: the first drive roll (11), motor (12), driving belt
(13), driver element (16) and, wear the furnace body wall of described body of heater (1) and run through the transmission belt (9) of described body of heater (1)；
Wherein, described motor (12) is connected with described first drive roll (11), and described driving belt (13) is wrapped in described
On second drive roll (15) of the first drive roll (11) and described driver element (16), described transmission belt (13) is wrapped in described
On at least one live-roller (10) of second drive roll (15) and described driver element (16), described transmission belt (9) with described
Driving belt (13) is wrapped in the various location on described second drive roll (15)；Described motor (12) drives described the
One drive roll (11) rotates, and drives described driving belt (13), described second drive roll (15), at least one transmission described successively
Roller (10), described transmission belt (9) rotate.
6. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 5 are it is characterised in that described first
The footpath area of section of the center of gravity of drive roll (11) is less than the footpath area of section at described first drive roll (11) two ends；With or
The footpath area of section of the center of gravity of described second drive roll (15) is less than the footpath section at described second drive roll (15) two ends
Area；With or
The footpath area of section of the center of gravity of described at least one live-roller (10) is less than described at least one live-roller (10) two ends
Footpath area of section.
7. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 6 are it is characterised in that described driving
Unit (16) at least also includes: in driver element support (168), at least one live-roller (10) of described driver element (16)
First live-roller (14), plain bearing housing (167), spring (163) and stop screw (164)；
Wherein, described driver element support (168) have a limited impression (162), described plain bearing housing (167) at least portion
Set up separately and be placed in described limited impression (162), the roller head of described first live-roller (14) be located in described limited impression (162) and
It is connected on the loading end (161) of described plain bearing housing (167)；
Described stop screw (164) penetrates described driver element support (168) and is arranged on plain bearing housing (167), described
Spring (163) is sheathed on described stop screw (164), and described stop screw (164) place direction is perpendicular to the described first biography
The groove surface of dynamic roller (14) place direction, the loading end (161) of described plain bearing housing (167) and described limited impression (162)
Equal, the groove surface of described limited impression (162) is more than the roller head of described first live-roller (14) and described plain bearing housing
(167) contact surface (166)；
Two kinds of working conditions of described driver element (16) include: described spring (163) is in spring original length state, described
There is between plain bearing housing (167) and described limited impression (162) state in gap；
Described stop screw (164) rotates, and described spring (163) is in spring-compressed state, by positioned at described loading end
(161) bearing (165) and the roller head of described first live-roller (14) between, described first live-roller (14) drives list to described
The length distance in the gap described in gravity motion of first support (168), described plain bearing housing (167) and described limited impression
(162) state fitting.
8. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 5 it is characterised in that
Described body of heater (1) includes the second body of heater portion of the first oven body part (19) connection relative with described first oven body part (19)
Divide the contact between (20), and the furnace body wall of described first oven body part (19) and the furnace body wall of described second oven body part (20)
Face is formed with two the first relative openings, and wherein, described two the first relative openings respectively transmit described transmission belt
(9) inlet port and the outlet corresponding with described inlet port.
9. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 5 are it is characterised in that described basis
Levy thin layer hetero-junctions hit low temperature silver paste curing apparatus also to include:
Clean chamber (2), is embedded on the furnace body wall inwall of described body of heater (1), and the cavity volume of described cleaning chamber (2) is less than described
The body of heater volume of body of heater (1), described cleaning chamber (2) offers two the second relative openings, wherein, described second opening and institute
State the first opening to be adapted；
Described exhaust apparatus and described transmission belt (9) are also provided at that described cleaning chamber (2) is internal, described air inlet pipe (3) another
One end also wear described cleaning chamber (2) inwall and be connected with one end of described gas distribution pipe (4), described gas distribution pipe (4) another
End is connected with one end of described snorkel (5), and the other end of described snorkel (5) wears the inwall of described clean chamber (2) to setting
It is equipped with first oven body part (19) of heat lamp (6).
10. intrinsic sheet hetero-junctions hit low temperature silver paste curing apparatus as claimed in claim 5 are it is characterised in that described transmission
The material of belt (9) includes: polyether-ether-ketone, politef, CTFE, Kynoar, polyvinylidene chloride, poly- first
Aldehyde, polyamide, polystyrene, polyethylene, engineering plastics, polymethyl methacrylate, polyvinyl fluoride, nylon, polysulfones, polyphenyl
One or more of ether, epoxy material, synthetic material, pottery, carbon fiber, tungsten alloy filament.
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| CN201620885891.8U CN205900574U (en) | 2016-08-12 | 2016-08-12 | Intrinsic thin layer heterojunction HIT low temperature silver thick liquid curing equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
| CN113539895A (en) * | 2021-06-17 | 2021-10-22 | 深圳米飞泰克科技有限公司 | Chip baking and curing method and chip mounting method |
-
2016
- 2016-08-12 CN CN201620885891.8U patent/CN205900574U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
| CN113539895A (en) * | 2021-06-17 | 2021-10-22 | 深圳米飞泰克科技有限公司 | Chip baking and curing method and chip mounting method |
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