CN205900524U - Power semiconductor module based on heat dissipation scheme - Google Patents
Power semiconductor module based on heat dissipation scheme Download PDFInfo
- Publication number
- CN205900524U CN205900524U CN201620889313.1U CN201620889313U CN205900524U CN 205900524 U CN205900524 U CN 205900524U CN 201620889313 U CN201620889313 U CN 201620889313U CN 205900524 U CN205900524 U CN 205900524U
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- Prior art keywords
- power semiconductor
- utility
- model
- heat dissipation
- module based
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Abstract
The utility model relates to a power semiconductor module based on heat dissipation scheme belongs to the power semiconductor field. The utility model discloses a power semiconductor, metal heat diffuser and PCB base plate, be equipped with the opening on the PCB base plate, the PCB base plate openly is equipped with power semiconductor's circuit, PCB back of the substrate fixes metal heat diffuser is last, power semiconductor fixes in the opening metal heat diffuser is last, the welding of power semiconductor pin is in on the circuit. The utility model discloses be applied to the power semiconductor related fields, through the utility model discloses the integrative design of PCB base plate and metal heat diffuser can be realized and the radiating effect is improved, through the utility model discloses available ordinary PCB base plate replaces aluminium base board, with reduce cost, furthermore, the utility model discloses select for use the copper bar as the radiator, can also play the current -carrying effect as the power cord when realizing the radiating effect.
Description
Technical field
This utility model belongs to power semiconductor field and in particular to a kind of power semiconductor based on heat dissipation design
Device blocks.
Background technology
Power semiconductor is also called power electronic devices, is mainly used in the transformation of electrical energy of Power Electronic Circuit.In electricity
During the work of power electronic device, device heating, intensification can be caused because of power attenuation.Device temperature is too high will to shorten device lifetime, very
To burning device, this is also to limit power electronic devices electric current, the major reason of capacity.
For that purpose it is necessary to consider the cooling problem of power semiconductor, the radiating of power semiconductor is electric power
Emphasis in electronic device design work and difficult point.Aluminium base pcb is the normal of solution power semiconductor radiating installation question
Rule means.This scheme needs power semiconductor is welded on aluminium base, and control circuit part is welded on common pcb
On, so cause also to need between two pieces of circuit boards to connect and could work using wire.And it is former due to aluminium base pcb price
Cause, it is very high to adopt cost in this way, and structure is also troublesome.
Utility model content
In view of this, the purpose of this utility model is to overcome the deficiencies in the prior art, provides one kind to be based on heat dissipation design
Power semiconductor device module, realize common pcb substrate and metal heat sink Integral design and improve radiating effect.
For realizing object above, this utility model adopts the following technical scheme that
A kind of power semiconductor device module based on heat dissipation design, including power semiconductor, metal heat sink and
Pcb substrate, described pcb substrate is provided with opening, and described pcb substrate front side is provided with the circuit of described power semiconductor, institute
State pcb substrate back to be fixed on described metal heat sink, fixing in said opening described of described power semiconductor
On metal heat sink, described power semiconductor pin is welded on described circuit.
Further, described metal heat sink is copper bar.
Further, described power semiconductor and described opening match each other.
Further, between described power semiconductor and described opening, there is gap.
Further, described metal heat sink is made up of copper bar and copper billet, and described pcb substrate back is fixed on described copper bar
On, on the fixing described copper bar in said opening of described copper billet, described power semiconductor is fixed on described copper billet.
Further, described copper billet and described opening match each other.
Further, between described copper billet and described opening, there is gap.
Further, between described pcb substrate and described metal heat sink, and described power semiconductor with described
Fixed by scolding tin respectively between metal heat sink.
Further, fixed by scolding tin between described copper bar and described copper billet.
Further, described copper bar and described copper billet are structure as a whole.
This utility model adopts above technical scheme, at least possesses following beneficial effect:
This utility model is provided with opening by pcb substrate, and pcb substrate back is fixed on metal heat sink, and power is partly led
Body device is fixed on the metal heat sink in pcb base openings, realizes pcb substrate and metal heat sink Integral design and improves
Radiating effect, can use common pcb substrate to replace aluminium base by this utility model, with reduces cost；Additionally, this utility model
From copper bar as radiator, it is also used as power line while realizing radiating effect and plays current-carrying effect.
Brief description
Fig. 1 is a kind of section of the power semiconductor device module embodiment one based on heat dissipation design of this utility model
Figure；
Fig. 2 is a kind of section of the power semiconductor device module embodiment two based on heat dissipation design of this utility model
Figure；
Fig. 3 is a kind of section of the power semiconductor device module embodiment three based on heat dissipation design of this utility model
Figure；
Fig. 4 is a kind of section of the power semiconductor device module embodiment three based on heat dissipation design of this utility model
Figure.
In figure: 1, power semiconductor；101st, pin；2nd, metal heat sink；201st, copper bar；202nd, copper billet；3rd, metal
Radiator；4th, scolding tin.
Specific embodiment
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
As depicted in figs. 1 and 2, this utility model provides a kind of power semiconductor device module based on heat dissipation design, bag
Include power semiconductor 1, metal heat sink 2 and metal heat sink 3, described pcb substrate 3 is provided with opening, described pcb substrate
3 fronts are provided with the circuit of described power semiconductor 1, and described pcb substrate 3 back side is fixed on described metal heat sink 2, institute
State on the fixing described metal heat sink 2 in said opening of power semiconductor 1, the pipe of described power semiconductor 1
Foot 101 is welded on described circuit.
Understand, this utility model is provided with opening by described pcb substrate, and pcb substrate back is fixed on metal heat sink,
Power semiconductor is fixed on the metal heat sink in pcb base openings, realizes pcb substrate and metal heat sink integrally sets
Count and improve radiating effect.
As further improvement of the utility model, described metal heat sink 2 is copper bar 101.
It is understood that this utility model selects copper bar as radiator, acceptable while realizing radiating effect
Play current-carrying effect as power line.
Further, as shown in figure 1, described power semiconductor 1 is matched each other with described opening；Preferably, as Fig. 2
Shown, between described power semiconductor 1 and described opening, there is gap.
It is understood that because each power semiconductor shape is different, by described power semiconductor 1 and institute
Stating open design is to match each other, as shown in figure 1, being easy to during such assembling match, thus accelerating built-up time it is also possible to reduce
The probability of assembling error；And from the aspect of radiating, increasing heat-dissipating space can effectively improve radiating effect as far as possible, so described work(
Between rate semiconductor device 1 and described opening, there is gap, as shown in Fig. 2 to increase heat-dissipating space.
As shown in Figure 3 and Figure 4, as the improvement further of this utility model radiating, described metal heat sink 2 is by copper bar
201 and copper billet 202 constitute, described pcb substrate 3 back side is fixed on described copper bar 201, described copper billet 202 be fixed on described in open
On described copper bar 201 in mouthful, described power semiconductor 1 is fixed on described copper billet 202, by adding described copper billet
Described power semiconductor 1 is also protruded from described pcb substrate 3 by 202 increasing heat radiation areas simultaneously, makes this utility model real
Existing three-dimensional radiator structure, improves radiating effect further.
Further, as shown in figure 3, described copper billet 202 is matched each other with described opening, so described copper billet 202 and institute
State and do not have, between opening, the gap leading to rock, be easy to fixing assembling, and do not need extra location equipment it is ensured that assembling
Concordance.
Further, as shown in figure 4, there is gap between described copper billet 202 and described opening, so examine in terms of radiating
Consider, increase heat-dissipating space as far as possible and can effectively improve radiating effect.
Above-mentioned two kinds of described copper billets 202 of offer and the scheme of described open design, concrete condition can be in conjunction with described power half
The heating effect of conductor device 1 makes the Scheme Choice suiting the requirements.
Further, between described pcb substrate 3 and described metal heat sink 2, and described power semiconductor 1 with
Pass through scolding tin 4 respectively fixing between described metal heat sink 2.In practical operation, can be injected into by the way of injection scolding tin is needed
Between two faces to be fixed, so can ensure that the maximization of area of dissipation, improve radiating effect.
Pass through scolding tin 4 between described copper bar 201 and described copper billet 202 to fix, the mode that may also be employed injecting scolding tin is injected
To needing, between two fixing faces, so to can ensure that the maximization of area of dissipation, improve radiating effect.Preferably, in order to
Improve radiating effect, reduce welding step, described copper bar 201 is structure as a whole with described copper billet 202.
Pcb substrate in this utility model selects common pcb substrate, such as the pcb substrate of fr4 material, by copper bar, device
It is structure as a whole with common pcb substrate design, first by welding copper bus on pcb, then dissipating power semiconductor
Hot face is welded on copper bar, and its pin is welded on pcb simultaneously.So on the premise of effective realization radiating, can substitute
Using aluminum pcb substrate, with reduces cost, but also can install on one piece of common pcb and include power semiconductor and control
Component processed is in interior all devices.
This utility model is not limited to above-mentioned preferred forms, and anyone can draw under enlightenment of the present utility model
Other various forms of products, however, making any change in its shape or structure, every have same as the present application or phase
Approximate technical scheme, all falls within protection domain of the present utility model.
Claims (10)
1. a kind of power semiconductor device module based on heat dissipation design it is characterised in that: include power semiconductor, metal
Radiator and pcb substrate, described pcb substrate is provided with opening, and described pcb substrate front side is provided with described power semiconductor
Circuit, described pcb substrate back is fixed on described metal heat sink, and described power semiconductor is fixing in said opening
Described metal heat sink on, described power semiconductor pin is welded on described circuit.
2. the power semiconductor device module based on heat dissipation design according to claim 1 it is characterised in that: described metal
Radiator is copper bar.
3. the power semiconductor device module based on heat dissipation design according to claim 2 it is characterised in that: described power
Semiconductor device is matched each other with described opening.
4. the power semiconductor device module based on heat dissipation design according to claim 2 it is characterised in that: described power
Between semiconductor device and described opening, there is gap.
5. the power semiconductor device module based on heat dissipation design according to claim 1 it is characterised in that: described metal
Radiator is made up of copper bar and copper billet, and described pcb substrate back is fixed on described copper bar, and described copper billet is fixed on described opening
In described copper bar on, described power semiconductor is fixed on described copper billet.
6. the power semiconductor device module based on heat dissipation design according to claim 5 it is characterised in that: described copper billet
Match each other with described opening.
7. the power semiconductor device module based on heat dissipation design according to claim 5 it is characterised in that: described copper billet
And described opening between, there is gap.
8. the power semiconductor device module based on heat dissipation design according to any one of claim 1 to 7, its feature exists
In: between described pcb substrate and described metal heat sink, and between described power semiconductor and described metal heat sink
Fixed by scolding tin respectively.
9. the power semiconductor device module based on heat dissipation design according to any one of claim 5 to 7, its feature exists
In: fixed by scolding tin between described copper bar and described copper billet.
10. the power semiconductor device module based on heat dissipation design according to any one of claim 5 to 7, its feature exists
In: described copper bar is structure as a whole with described copper billet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620889313.1U CN205900524U (en) | 2016-08-16 | 2016-08-16 | Power semiconductor module based on heat dissipation scheme |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620889313.1U CN205900524U (en) | 2016-08-16 | 2016-08-16 | Power semiconductor module based on heat dissipation scheme |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205900524U true CN205900524U (en) | 2017-01-18 |
Family
ID=57779370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620889313.1U Expired - Fee Related CN205900524U (en) | 2016-08-16 | 2016-08-16 | Power semiconductor module based on heat dissipation scheme |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205900524U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129024A (en) * | 2016-08-16 | 2016-11-16 | 中山大象动力科技有限公司 | A kind of power semiconductor device module based on heat dissipation design |
| CN110290639A (en) * | 2019-07-31 | 2019-09-27 | 东莞市沃德普自动化科技有限公司 | A kind of equipment and its pcb board |
| WO2020191650A1 (en) * | 2019-03-27 | 2020-10-01 | 华为技术有限公司 | Heat dissipating assembly and electronic device |
-
2016
- 2016-08-16 CN CN201620889313.1U patent/CN205900524U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129024A (en) * | 2016-08-16 | 2016-11-16 | 中山大象动力科技有限公司 | A kind of power semiconductor device module based on heat dissipation design |
| WO2020191650A1 (en) * | 2019-03-27 | 2020-10-01 | 华为技术有限公司 | Heat dissipating assembly and electronic device |
| CN112005368A (en) * | 2019-03-27 | 2020-11-27 | 华为技术有限公司 | Heat dissipation assembly and electronic equipment |
| CN110290639A (en) * | 2019-07-31 | 2019-09-27 | 东莞市沃德普自动化科技有限公司 | A kind of equipment and its pcb board |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170118 Termination date: 20190816 |