CN205879411U - Pressure drag sensor and pressure -sensitive element who is used for pressure drag sensor - Google Patents
Pressure drag sensor and pressure -sensitive element who is used for pressure drag sensor Download PDFInfo
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- CN205879411U CN205879411U CN201620685808.2U CN201620685808U CN205879411U CN 205879411 U CN205879411 U CN 205879411U CN 201620685808 U CN201620685808 U CN 201620685808U CN 205879411 U CN205879411 U CN 205879411U
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Abstract
The utility model discloses a pressure -sensitive element of pressure drag sensor and the pressure drag sensor that has it, pressure -sensitive element includes: the conductor layer, the pressure sensitive layer, the pressure sensitive layer covers on the upper surface of conductor layer partly at least, the pressure sensitive layer is constructed to be done the specific resistance of pressure sensitive layer by last under to the gradient reduce or increase. According to the utility model discloses pressure -sensitive element can respond pressure in a big way, makes the sensor wider to pressure detection's scope, and the accuracy of detection is higher.
Description
Technical field
This utility model relates to sensor technical field, more particularly, to a kind of pressure-sensitive unit for piezoresistance sensor
Part and the piezoresistance sensor with this pressure cell.
Background technology
Pressure transducer can be divided into piezoelectric transducer based on piezoelectric and based on pressure drag material according to material
Piezoresistance sensor.It is made for sensing element by piezoelectric ceramics, piezoquartz, piezo-electric electret and organic piezoelectric film etc.
Piezoelectric transducer when bearing pressure material surface produce transferable electric charge, electric charge can through the voltage of detection equipment
Size with direct reaction pressure.With material piezoresistance sensors as sensing element such as alloy sensitive grid, quasiconductors when pressurized
Producing deformation, deformation causes the resistance of sensing element to change, by the change of the sensitive original paper resistance of Wheatstone bridge detection
Just can detect the pressure size being applied on voltage sensitive sensor.
In recent years, piezoresistance sensitivity material (pressure sensitive) based on macro quanta tunnel effect is ripe, based on this type of all the more
The pressure transducer of pressure sensitive have also been obtained to be developed widely and applies.This type of pressure sensitive be usually insulation resin,
Rubber participates in a certain amount of conduction or semiconductor nano forms to micro-size particles.When pressed, the conductive particle in material
The spacing reduction of son, when distance tapers to a certain degree, just can occur electricity due to quantum tunneling effect between conducting particles
The transfer of lotus, conduction the most macroscopically.The size being applied to sensor upward pressure can be by detecting the size of sensor resistance
And obtain.
All there is respective shortcoming in any of the above pressure transducer.Such as, piezoelectric transducer is adapted only to dynamic measurement amount,
Power acts on the faint electric charge produced on piezoelectric transducer and can be leaked away by self, and only under dynamic force effect, electric charge could be mended
Fill.Piezoresistance sensor needs to bond with measured body, and bonds selection and process suffers from the biggest impact to sensor.Tool
The sensor having pressure sensitive measures the error of pressure can reach about 20%, and accuracy of measurement is poor.
Utility model content
The application is to make following facts and the discovery of problem and understanding based on inventor:
For using the sensor of pressure sensitive, sensor resistance is not linear relationship with the change of pressure, and
It is to meet following relation: along with the increase of pressure, resistance rapid decrease before this, the most slowly decline.This makes pressure reach
Cannot accurate evaluation stress level time near sensor upper limit of detection.If in order to reach the purpose measured, it is necessary to selected range
Bigger sensor, but have the most again and cannot accurately detect that the problem of little force value occurs.Wherein, initial resistance is with pressure
The rapid decrease that power increases quickly increases with the contact area of laminated photosensitive layer mainly due to topping wire layer/piezoresistance sensitivity layer
Caused.
In view of this, present inventor devises the piezoresistance sensor of a kind of new construction, and this piezoresistance sensor is one
Resistance in the range of constant-pressure is more mild with the change of pressure, the most linear, and also has very under minimum pressure
Good response, makes detection accuracy improve.
One of technical problem that this utility model is intended to solve in correlation technique the most to a certain extent.To this end, this reality
Proposing a kind of pressure cell for piezoresistance sensor with novel, the pressure that scope is bigger can be carried out by described pressure cell
Response, improves the accuracy of sensor detection.
This utility model also proposed a kind of piezoresistance sensor with above-mentioned pressure cell.
According to the pressure cell for piezoresistance sensor of this utility model first aspect, including: conductor layer；Presser sensor
Layer, described pressure sensitive layer cover described conductor layer upper surface at least some of on, described pressure sensitive layer is constructed
Ratio resistance gradient from top to bottom for described pressure-sensitive sensitive layer is decreased or increased.
Large range of pressure can be responded according to pressure cell of the present utility model, make sensor that pressure to be examined
That surveys is wider, and the accuracy of detection is higher.
It addition, can also have the technical characteristic added as follows according to pressure cell of the present utility model:
According to embodiments more of the present utility model, described pressure sensitive layer includes polymer gradient layer, described polymer
Conducting particles is distributed in gradient layer, and wherein, the elastic modelling quantity of described polymer gradient layer and described conducting particles are described poly-
At least one in distributed density in compound layer is formed with gradient from top to bottom.
According to embodiments more of the present utility model, it is multiple that described polymer gradient layer includes that stacking from top to bottom is arranged
Polymeric layer, the elastic modelling quantity of each described polymeric layer the most identical with the distributed density of conducting particles and any one
At least one in the elastic modelling quantity of described polymeric layer and the distributed density of conducting particles is with polymeric layer other described not
With.
According to embodiments more of the present utility model, described pressure sensitive layer includes the polymeric layer that two stackings are arranged,
The material of two described polymeric layers is identical and the distribution of conducting particles in two described polymeric layers and conducting particles is dense
Spend identical, in one of them the described sub-polymeric layer in two described polymeric layers, conductive materials or insulant are also distributed
Matter.
According to embodiments more of the present utility model, described polymeric layer is Silica-based polymer nitride layer or carbon-based polymer
Layer.
According to embodiments more of the present utility model, multiple described conducting particles include metal conductive particles, nonmetal lead
At least one in charged particle and metal conductive oxide particle, the particle diameter of described conducting particles is 10nm-1mm.
According to the piezoresistance sensor of this utility model embodiment, including: lower insulating barrier；Upper insulating barrier, described upper insulating barrier
It is located at above described lower insulating barrier and spaced apart with described lower insulating barrier；Wall, described wall is connected to described lower insulation
Layer coordinates with between described upper insulating barrier and with described lower insulating barrier and described upper insulating barrier and limits installation cavity；Lower wire
Layer, described lower wire layer be located at the upper surface of described lower insulating barrier at least some of on；First varistor layer, described first pressure-sensitive
Layer is located in described installation cavity and be formed gap spaced apart with described upper insulating barrier, this practicality according to described first varistor layer
Novel pressure cell, described conductor layer is formed as described lower wire layer.
According to embodiments more of the present utility model, piezoresistance sensor also includes: conductive layer, and described conductive layer is positioned at described
Installation cavity is interior and is located between the first varistor layer and described upper insulating barrier, and described conductive layer includes multiple conductive part, multiple described
Conductive part is nested in the horizontal direction to be arranged and spaced apart between two adjacent described conductive parts.
According to embodiments more of the present utility model, multiple described conductive parts are formed as multiple concentric ring, along described same
Radially, the radial width of multiple described concentric rings increases thimble the most successively.
According to embodiments more of the present utility model, piezoresistance sensor also includes: upper conductor layer, and described upper conductor layer is located at
In described installation cavity and cover on described on the lower surface of insulating barrier, described conductive part is located at described upper conductor layer and described the
Between one varistor layer and spaced apart with at least one of described upper conductor layer and described first varistor layer.
According to embodiments more of the present utility model, piezoresistance sensor also includes: the second varistor layer, described second varistor layer
Being formed as inverted described pressure cell, described second varistor layer is positioned at described installation cavity and is located under described upper insulating barrier
On surface, described conductive part be located between described first varistor layer and described second varistor layer and with described first varistor layer and institute
At least one stating the second varistor layer is spaced apart.
According to embodiments more of the present utility model, piezoresistance sensor also includes: upper conductor layer or the second varistor layer, described
Conductive part includes two, two the most spaced apart settings of described conductive part, and two described conductive parts are respectively provided at institute
State on upper conductor layer and described second varistor layer.
Additional aspect of the present utility model and advantage will part be given in the following description, and part will be from explained below
In become obvious, or recognized by practice of the present utility model.
Accompanying drawing explanation
Fig. 1 is the structural representation of the pressure cell for piezoresistance sensor according to one embodiment of this utility model；
Fig. 2 is the structural representation of the pressure cell for piezoresistance sensor according to another embodiment of this utility model
Figure；
Fig. 3 is the structural representation of the pressure cell for piezoresistance sensor according to this utility model further embodiment
Figure；
Fig. 4 is the structural representation of the piezoresistance sensor according to this utility model embodiment；
Fig. 5 is the structural representation of the conductive layer of the piezoresistance sensor according to this utility model embodiment.
Reference:
Piezoresistance sensor 100；
Lower insulating barrier 11；Upper insulating barrier 12；Wall 20；Pressure cell 30；Polymer gradient layer 31；Polymeric layer 311；
Conductor layer 32；Conducting particles 33；Lower wire layer 41；Upper conductor layer 42；Conductive layer 50；Installation cavity 101.
Detailed description of the invention
Of the present utility model embodiment is described below in detail, and the example of described embodiment is shown in the drawings.Below by
The embodiment being described with reference to the drawings is exemplary, it is intended to be used for explaining this utility model, and it is not intended that new to this practicality
The restriction of type.
Describe the pressure cell for piezoresistance sensor 100 according to this utility model embodiment below in conjunction with the accompanying drawings in detail
30。
Referring to figs. 1 through shown in Fig. 5, according to the pressure cell 30 for piezoresistance sensor 100 of this utility model embodiment
Conductor layer 32 and pressure sensitive layer can be included.Pressure sensitive layer can cover upper surface at least some of at conductor layer 32
On.Wherein, pressure sensitive layer is constructed in structure: the ratio resistance gradient from top to bottom of pressure sensitive layer is decreased or increased.
Here, it should be noted that in this application, " than resistance " refers to the change in resistance amount of resistance under unit pressure.Than electricity
Hinder the biggest, the change in resistance of the pressure sensitive layer resistance when pressurized is the biggest, less than resistance, and pressure sensitive layer is when pressurized
The change in resistance degree of resistance is the least.It is to say, from top to bottom, the different parts of pressure sensitive layer can be sent out at the same pressure
Raw resistance variations in various degree.
When the ratio resistance gradient from top to bottom of pressure sensitive layer reduces, the top of pressure sensitive layer can be in less pressure
Significant resistance variations occurs under power, and the bottom of pressure sensitive layer then can occur more significant resistance to become under bigger pressure
Change；Otherwise, when the ratio resistance gradient from down to up of pressure sensitive layer increases, then the bottom of pressure sensitive layer can be less
More significant resistance variations occurs under pressure, and the top of pressure sensitive layer then can occur more significant electricity under bigger pressure
Resistive.
Thus, no matter under less pressure, or under bigger pressure, pressure sensitive layer all can occur more to show
The resistance variations write, along with the increase of pressure, the resistance of pressure sensitive layer can occur to change slowly, so that pressure cell
30 can realize response to pressure in bigger pressure limit.
Pressure cell 30 according to this utility model embodiment, by arranging pressure sensitive layer and being constructed by pressure sensitive layer
For being decreased or increased than resistance gradient from top to bottom so that the resistance of pressure cell 30 is possible not only under bigger pressure occur
Change, and can change under less pressure, large range of pressure can be responded, make sensor to pressure
It is wider that power detects, and the accuracy of detection is higher.
In the related, the resistance of sensor is along with the increase of pressure, and resistance first rapid decrease, afterwards with regard to slowly change
Change.And for according to the pressure cell 30 in this utility model embodiment, the resistance of pressure sensitive layer can be along with the increasing of pressure
Big generation changes slowly.Such as, in embodiments more of the present utility model, the resistance of the resistance of pressure sensitive layer and pressure
Between relation can meet certain change curve or change straight line.In practice, this change curve or change straight line are permissible
Obtain by the several discrete point detected being carried out in certain deviation range linear fit.
Alternatively, as shown in Figure 1 to Figure 3, according to embodiments more of the present utility model, pressure sensitive layer can include gathering
Compound gradient layer 31, polymer gradient layer 31 can cover conductive layer 32 upper surface at least some of on, polymer ladder
Conducting particles 33 can be distributed in degree layer 31.The conducting particles 33 distributed density in polymer gradient layer 31 and polymer ladder
At least one in the elastic modelling quantity of degree layer 31 gradient from top to bottom is decreased or increased.
When elastic modelling quantity is formed with gradient, compressive deformation amount could be formed with gradient, and the position that elastic modelling quantity is big is permissible
Deforming under less pressure, the part that elastic modelling quantity is less can deform, so that leading under bigger pressure
The change of the spacing between charged particle 33 is formed with gradient, it is achieved than the gradient of resistance.Distributed density shape when conducting particles 33
When becoming to have gradient, the spacing between conducting particles 33 is formed with gradient, and closely spaced conducting particles 33 is permissible under less pressure
First conduct electricity, conducting particles 33 rear conduction under bigger pressure that spacing is big.Thus, it is also possible to form the gradient than resistance.
According to embodiments more of the present utility model, polymer gradient layer 31 can be formed as overall one layer, it is also possible to shape
Become stepped construction, as shown in Figure 3.When pressure cell 30 comprises the one layer of polymeric gradient layer 31 of entirety, polymer gradient
Layer 31 can be the polymeric layer 311 of one layer of gradient conducting particles concentration distribution, it is also possible to be one layer of ladder containing conducting particles
The polymeric layer 311 of degree elastic modelling quantity.
Such as, as it is shown in figure 1, in embodiments more of the present utility model, polymer gradient layer 31 can be formed as whole
Body one layer, wherein, the conducting particles 33 distributed density in polymer gradient layer 31 is the most different.Such as, such as Fig. 1 institute
Showing, the conducting particles 33 distributed density in polymer gradient layer 31 is gradually reduced from top to bottom.Thus, it is in polymer gradient
Layer 31 top conducting particles 33 distributed density can more than be in polymer gradient layer 31 bottom conducting particles 33 point
Cloth concentration, when mixing polymer gradient layer 31 pressurized of conducting particles 33, equal at polymer gradient layer 31 elastic modelling quantity everywhere
In the case of Yi Zhi, the top of polymer gradient layer 31 can be conducted electricity prior to the bottom of polymer gradient layer 31, when pressure strengthens
After, the bottom of polymer gradient layer 31 is electrically conductive, makes pressure cell 30 bigger to the response range of pressure.
In this has the structure of particle concentration gradient, pore space structure can be provided with in polymer gradient layer 31, in order to make to lead
The diffusion of charged particle 33.The most during fabrication, can first adjust the concentration of conducting particles 33 in ink and make piezoresistance sensor 100
Meet and the most just turn on, then at the surface of electrode layer silk-screen/spraying pressure-sensitive ink, band can be obtained after solidification free
The polymer gradient layer 31 of hole structure, the most again at the colloidal sol of polymer gradient layer 31 surface-coated conducting particles 33, or will
Polymer gradient layer 31 is immersed in a period of time in the colloidal sol of conducting particles 33, has particle concentration gradient such that it is able to prepare
Pressure sensitive material structure.At the surface layer that particle concentration increases, the response to pressure can become more sensitive, and inside is right
Respond in the case of high pressure, thus reach the most well to respond the effect of signal in the range of extensive pressure.
The most such as, as in figure 2 it is shown, in other embodiments of the present utility model, polymer gradient layer 31 can be formed
For overall one layer, the elastic modelling quantity of polymer gradient layer 31 is formed with gradient from top to bottom.Such as, as in figure 2 it is shown, polymer is terraced
The elastic modelling quantity of degree layer 31 is gradually reduced from top to bottom.Thus, the elastic modelling quantity on the top of polymer gradient layer 31 is more than polymerization
The elastic modelling quantity of the bottom of thing gradient layer 31.When polymer gradient layer 31 pressurized, the deformation on the top of polymer gradient layer 31
More than the deformation of the bottom of polymer gradient layer 31, so that the spacing change difference of conducting particles therein 33, work as conductive particle
When son 33 is evenly distributed in polymer gradient layer 31, when the top of the polymer gradient layer 31 that elastic modelling quantity is bigger is by little pressure
First turn on, turn on behind the bottom of the polymer gradient layer 31 that elastic modelling quantity is less, make the pressure cell 30 response range to pressure
Wider.
In this has the structure of elastic modelling quantity gradient, can be by adjusting conducting particles 33 in polymer gradient layer 31
Concentration make sensor meet the most just turn on, then at the surface of electrode layer silk-screen/spraying pressure-sensitive ink, Jing Guojin
The pressure sensitive material structure that elastic modelling quantity is higher can be obtained, the most again in pressure sensitive material structure after row primary solidification
Upper coating firming agent, or it is dipped in diluting in firming agent a period of time, thus prepare and there is elastic modelling quantity gradient
Pressure sensitive material structure.At the bottom that elastic modelling quantity is higher, the response to pressure can be more sensitive, and surface is to high pressure feelings
Respond under condition, thus reach the most well to respond the effect of signal in the range of extensive pressure.
In detailed description of the invention more of the present utility model, polymer gradient layer 31 can include that stacking sets from top to bottom
The multiple polymeric layers 311 put, the elastic modelling quantity of each polymeric layer 311 and the distributed density phase from top to bottom of conducting particles 33
With, and at least one and other in the distributed density of the elastic modelling quantity of any one polymeric layer 311 and conducting particles 33
The difference of polymeric layer 311.
It is to say, in each polymeric layer 311, elastic modelling quantity everywhere is the most identical, and conducting particles 33 is uniform
Be distributed in wherein, the elastic modelling quantity of each polymeric layer 311 can be different from the elastic modelling quantity of other polymeric layer 311, often
In individual polymeric layer 311, the distributed density of conducting particles is permissible with the distributed density of the conducting particles in other polymeric layer 311
Different.Thus, multiple polymeric layers 311 can be formed as the structure more different than resistance, multiple polymeric layers when same pressurized
311 can collectively form the structure having than resistance variations gradient.
Such as, as it is shown on figure 3, polymer gradient layer 31 includes two polymeric layers 311, the material of two polymeric layers 311
Matter can be different, and the distributed density of conducting particles 33 can also be different.In this pressure sensitive material laminated construction, can will carry
The two kinds of inks having conducting particles 33 spray successively/silk-screen to conductor layer 32 on.Wherein, two polymeric layers 311 are at bullet
In property modulus and conducting particles 33 concentration/properties different, to reach the purpose to different pressures range response.Example
As, the polymer in two polymeric layers 311 is same polymer, and the conducting particles 33 in two polymeric layers 311 is also
It is identical particle, but in two-layer, the distributed density of conducting particles 33 has the biggest difference.
When this kind of structure is applied on the piezoresistance sensor 100 according to this utility model embodiment, along with being applied to tool
There is the increase of pressure on the piezoresistance sensor 100 of this structure, have three kinds of turn on process and occur: be placed on insulating barrier 12
Upper conductor (or second varistor layer) and the first varistor layer being placed on lower insulating barrier 11 become from space state and contact, produce the
A kind of conducting；In two layers of polymers layer 311, the conducting particles 33 in bigger one layer of particle concentration just may be used when bearing little pressure
There is quantum tunneling effect, first turn on, produce the second conducting；The low polymeric layer 311 of particle concentration is under bigger pressure
Produce two-layer tunnel-effect, turn on afterwards, produce the third conducting.It should be noted that two polymeric layers 311 here are not having
It is quasiconductor when having by external force, is not insulator, so " conducting " here only represents turns on energy owing to resistance reduces
The meaning that power increases.
Thus, the piezoresistance sensor 100 with this kind of structure is made pressure widely can be produced response, pressure sensibility
Improve, improve the detection performance of piezoresistance sensor 100.
It addition, in detailed description of the invention more of the present utility model, the material of two polymeric layers 311 is identical, and
The same conductive particle 33 of same concentrations is distributed in two polymeric layers 311, and one of them in two polymeric layers 311 is gathered
Conductive materials or megohmite insulant are also distributed in compound layer 311.Conductive materials can increase electric conductivity, and megohmite insulant then increases
Insulating properties, makes pressure drag performance between two polymeric layers 311 make a big difference, and this also can reach the sensitivity to pressure-responsive
Property.Alternatively, the shape of conductive materials or megohmite insulant can be formed as dendritic, lamellar or wire etc. respectively.Thus, it is possible to protect
Card plays preferably conduction or insulating effect.
Alternatively, polymer gradient layer 31 can spray or silk-screen is formed.Alternatively, polymer gradient layer 31 can be silicon
Based polyalcohol layer or carbon-based polymer layer.Thus, it is not only convenient for manufacturing, and polymer gradient layer 31 good insulating.
Alternatively, multiple conducting particles 33 can include metal conductive particles 33, radio frequency particle 33 and metal oxygen
At least one in compound conducting particles 33, the particle diameter of conducting particles 33 can be 10nm-1mm.Such as, conducting particles 33 is permissible
It is the particle diameter metal based material at 10nm-1mm: fine powder, lamellar, the foil-like such as gold, silver, copper, nickel or be processed into metallic fiber shape
Thing and the nanoscale of various synthesis, micron level spherical, thorn-like, dendritic, wire, bar-shaped and variously-shaped metal or alloy
Granule etc..The most such as, conducting particles 33 can be particle diameter metal-oxide based material between 10nm-1mm, as ITO granule,
IZO granule, ATO granule or AZO granule etc.；The most such as, conducting particles 33 can also is that other between 10nm-1mm of particle diameter
Conductive material, such as white carbon black based material, metallic salt material, metal clad material, macromolecular material and other composites etc..
Conducting particles 33 in polymer gradient layer 31 can comprise one or more in above material.
As shown in Figure 4, according to the piezoresistance sensor 100 of this utility model embodiment can include lower insulating barrier 11, upper absolutely
Edge layer 12, wall 20, lower wire layer 41 and the first varistor layer.Upper insulating barrier 12 can be located at above lower insulating barrier 11 and with
Lower insulating barrier 11 is spaced apart is formed with gap, i.e. goes up and has air layer between insulating barrier 12 and lower insulating barrier 11.Wall 20 can
To be connected between lower insulating barrier 11 and upper insulating barrier 12, wall 20 can coordinate with lower insulating barrier 11 and upper insulating barrier 12
Limit installation cavity 101.Lower wire layer 41 can be located at the upper surface of lower insulating barrier 11 at least some of on.First varistor layer
In can being located at installation cavity 101 and spaced apart with upper insulating barrier 12 be formed with gap, the first varistor layer can be above-mentioned pressure-sensitive
Element 30, now, the conductor layer 32 that conductor layer 32 can be formed as in lower wire layer 41, i.e. pressure cell 30 covers in lower insulation
Layer 11 upper surface at least some of on, polymer gradient layer 31 is spaced apart with upper insulating barrier 12 is formed with gap.
Owing to the pressure cell 30 according to this utility model embodiment has above-mentioned useful technique effect, therefore according to this
The response performance of pressure is improved by the piezoresistance sensor 100 of utility model embodiment, and detection accuracy improves.
In view of in pressure transducer in the related, the rapid decrease that initial resistance increases along with pressure is main
To be upper conductor layer/piezoresistance sensitivity layer with lower floor's sensitive layer contact area quickly increase causes.Therefore, in order to control this contact
The Fast Process that area increases, is also carried out the structure of contact surface according to the piezoresistance sensor 100 of this utility model embodiment
Modify.
As shown in Figure 4 and Figure 5, conductive layer 50 can also be included according to the piezoresistance sensor 100 of this utility model embodiment,
In conductive layer 50 may be located at installation cavity 101 and be located between the first varistor layer and upper insulating barrier 12, conductive layer 50 can wrap
Including multiple conductive part, multiple conductive parts can nested in the horizontal direction be arranged, and permissible between two adjacent conductive parts
Spaced apart.Thus, conductive layer 50 can be formed as discontinuous structure in the horizontal direction, when pressing piezoresistance sensor 100
Time, contact area can incrementally increase, and can improve the response range to pressure further.
Conductive part structure is formed as multiple, alternatively, according to embodiments more of the present utility model, such as, such as Fig. 5 institute
Showing, multiple conductive parts are formed as concentric ring, and along concentric ring radially, the radial width of multiple concentric rings from inside to outside may be used
To increase successively.Here, from inside to outside can be understood as from the center of concentric ring to the outside direction of concentric ring.In other words, lead
Electric layer 50 can be distributed in multiple concentric rings, and the concentric ring of inside is narrow, by antermarginal bigger.
Thus, conductive layer 50 can be formed as the structure with certain geometrical pattern, is distributed in pressure sensitive area
Uneven and regular.It is easy for making the sensor sensing part between insulating barrier 12 and lower insulating barrier 11 connect under little pressure
The core conductive compositions area touched is less, and sensor peripheral part conductive compositions face of contact of just having an opportunity at big pressure
Long-pending bigger.The contact area between upper conductor layer 42 or the second varistor layer and the second varistor layer can be better controled over pressure
Change, makes contact area change relatively slow, can have preferable response in widely pressure limit.Alternatively, as
Shown in Fig. 5, concentric ring can be formed as donut, it is, of course, also possible to be formed as concentric many side rings, and such as three square rings, four limits
Ring or five side rings etc..
As shown in Figure 4, upper conductor layer 42 can also be included according to the piezoresistance sensor 100 of this utility model embodiment, on
In conductor layer 42 can be located at installation cavity 101 and cover upper insulating barrier 12 lower surface at least some of on, conductive layer
50 can be arranged between upper conductor layer 42 and the first varistor layer, and conductive layer 50 can be pressure-sensitive with upper conductor layer 42 and first
At least one of layer is spaced apart.It is to say, conductive layer 50 can be located on the lower surface of upper conductor layer 42 and presses with first
Photosensitive layer spaced apart formation air layer, or, conductive layer 50 can be located on the upper surface of the first varistor layer and and upper conductor layer
42 spaced apart formation air layers, then or, conductive layer 50 can be the most spaced apart, now with the first varistor layer and upper conductor layer 42
The two ends of conductive layer 50 can be connected with wall.
Thus, during piezoresistance sensor 100 pressurized, the conduction that upper conductor layer 42 and the first varistor layer can be arranged by centre
Layer 50 contact, can control upper conductor layer 42 and the contact area of the first varistor layer by conductive layer 50, make piezoresistance sensor 100
Can respond pressure interior in a big way, detection performance is good.
Alternatively, in unshowned embodiments more of the present utility model, piezoresistance sensor 100 can include insulation
Layer 12, lower insulating barrier the 11, first varistor layer, the second varistor layer and conductive part 50.Second varistor layer can be located at installation cavity 101
In, and spaced apart with the first varistor layer.Second varistor layer can be above-mentioned pressure cell 30, and pressure cell 30 can be inverted and set
Put on the lower surface of upper insulating barrier 12.It is to say, piezoresistance sensor 100 has two pressure cells 30, one of them
Just putting, another is inverted, and two polymer gradient layers 31 are relative and spaced apart setting, are inverted in the pressure cell 30 arranged
Conductor layer 32 is considered as upper conductor layer 42.
Conductive part 50 can be located between the first varistor layer and the second varistor layer, and conductive part 50 can be pressure-sensitive with first
At least one of layer and the second varistor layer is spaced apart.It is to say, conductive part 50 can be arranged on the polymer of the first varistor layer
Layer 31 upper surface on and spaced apart with the polymeric layer 31 of the second varistor layer, or, conductive part 50 can be arranged on second
On the lower surface of the polymeric layer 31 of varistor layer and spaced apart with the polymeric layer 31 of the first varistor layer, or, conductive layer with
First varistor layer and the second varistor layer are the most spaced apart.
Thus, during piezoresistance sensor 100 pressurized, the conductive part 50 that the first varistor layer and the second varistor layer are arranged by centre
Contact, can control the first varistor layer and the contact area of the second varistor layer by conductive layer 50, make the pressure drag of this structure sense
Device 100 can also have and preferably detects performance, can respond the pressure in a big way.
It addition, according to concrete examples more of the present utility model, for having the first varistor layer and the pressure of upper conductor layer 42
Resistance sensor 100, conductive layer 50 can also include two, and two conductive layers 50 can spaced apart be arranged, i.e. in the vertical direction
Between two conductive layers 50, there is air layer at interval.One of them conductive layer 50 can be arranged on the lower surface of upper conductor layer 42,
Another conductive layer 50 can be arranged on the lower surface of the first varistor layer.Thus, when piezoresistance sensor 100 pressurized, two
Conductive layer 50 can contact, and thus, can also control contacting of the first varistor layer and upper conductor layer 42 by two conductive layers 50
Area, equally realizes the effect to pressure with widely response range.
For having the piezoresistance sensor 100 of the first varistor layer and the second varistor layer, conductive layer 50 also may be used
To include two, two conductive layers 50 can spaced apart be arranged, and one of them conductive layer 50 can be arranged on first pressure-sensitive
On the upper surface of layer, other in which conductive layer 50 can be arranged on the lower surface of the second varistor layer.Thus, led by two
Electric layer 50 can also realize controlling the effect of the contact area of the first varistor layer and the second varistor layer.
Alternatively, upper insulating barrier 12 can be identical with the material of lower insulating barrier 11, it is also possible to different.Upper insulating barrier 12 is permissible
For layer of polyethylene terephthalate (PET), PEN layer (PEN), novolac resin layer, epoxy resin layer or
Polyimide layers etc., lower insulating barrier 11 can also be layer of polyethylene terephthalate, PEN layer, phenolic aldehyde
Resin bed, epoxy resin layer or polyimide layer etc..Thus, it is simple to manufacture and advantage of lower cost.
Alternatively, conductive layer 50 can be development ink, Graphene ink, carbon nanotube ink, PEDOT ink or
The conductive materials such as silver slurry are made.Wherein, the upper surface for the first varistor layer is provided with conductive layer 50 or the second varistor layer
For lower surface is provided with the structure of conductive layer 50, when conductive layer 50 is made up of wire, conductive layer 50 can be regarded one as and lead
Line layer 32, now, can regard as respectively above and below polymer gradient layer 31 and be provided with a conductor layer 32.
In more preferably embodiment more of the present utility model, wall 20 can be glue-line.Thus, wall 20 can
To be formed as the glue frame bondd by upper insulating barrier 12 with lower insulating barrier 11, may be used for encapsulating sensing area, and by upper insulating barrier 12
Spaced apart with lower insulating barrier 11, form air layer, thus solid without upper insulating barrier 12 and lower insulating barrier 11 being attached
Fixed, assemble easier, cost is relatively low.Alternatively, this glue-line can use the material such as double faced adhesive tape or OCA to make.
Alternatively, conductor layer 32 can be that spraying or silk-screen form on upper insulating barrier 12 or lower insulating barrier 11, now leads
Wire material can be development ink, Graphene ink, carbon nanotube ink, PEDOT ink and or the silver conduction material such as slurry
Material.Conductor layer 32 can also form by processing the conductive coating at upper insulating barrier 12 or lower insulating barrier 11, and conductive coating is permissible
It is to cover on upper insulating barrier 12 or the surface of lower insulating barrier 11 by modes such as evaporation, sputter, spraying or silk-screens, conductor layer 32
Formation can be to be to be formed by etching or the mode such as radium-shine, conductor material can be ITO, IZO, development, Graphene, carbon
Nanotube, PEDOT, copper facing or the conductive material such as silver-plated.
Conductor layer 32 can with silk-screen, spray, be deposited with, sputter, etching or radium-shine formation.It is to say, can be in upper insulation
Silk-screen on layer 12 or lower insulating barrier 11, spray, be deposited with, sputter, etching or radium-shine formation conductor layer 32, thus at upper insulating barrier 12
With form upper conductor layer 42 and lower wire layer 41 on lower insulating barrier 11 respectively.
In sum, the piezoresistance sensor 100 according to this utility model embodiment can be by adjusting pressure sensitive material
Character and the contact area of regulation pressure conducting, reached there is pressure in pressure limit widely good response
Can, this piezoresistance sensor 100 resistance in the range of certain pressure is more mild with the change of pressure, the most linear, and
And under minimum pressure, also having well response, performance is greatly improved, and can improve detection accuracy.
Other of piezoresistance sensor 100 according to this utility model embodiment are constituted and common for this area of operation
It is knowable for technical staff, is not described in detail at this.
In description of the present utility model, it is to be understood that term " " center ", " on ", D score, "front", "rear",
Orientation or the position relationship of the instruction such as " interior ", " outward ", " radially " they are based on orientation shown in the drawings or position relationship, merely to
It is easy to describe this utility model and simplification description rather than instruction or the device of hint indication or element must have specific side
Position, with specific azimuth configuration and operation, therefore it is not intended that to restriction of the present utility model.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include at least one this feature.In description of the present utility model, " multiple " are meant that at least two, such as two
Individual, three etc., unless otherwise expressly limited specifically.
In this utility model, unless otherwise clearly defined and limited, term " install ", " being connected ", " connection ", " Gu
Fixed " etc. term should be interpreted broadly, connect for example, it may be fixing, it is also possible to be to removably connect, or integral；Can be
Be mechanically connected, it is also possible to be electrical connection or each other can communication；Can be to be joined directly together, it is also possible to by the indirect phase of intermediary
Even, can be connection or the interaction relationship of two elements of two element internals, unless otherwise clear and definite restriction.For this
For the those of ordinary skill in field, above-mentioned term concrete meaning in this utility model can be understood as the case may be.
In this utility model, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score
Can be that the first and second features directly contact, or the first and second features are by intermediary mediate contact.And, first is special
Levy second feature " on ", " top " can be fisrt feature directly over second feature or oblique upper, or be merely representative of
One characteristic level height is higher than second feature.Fisrt feature second feature " under ", " lower section " can be that fisrt feature is
Immediately below two features or obliquely downward, or it is merely representative of fisrt feature level height less than second feature.
In the description of this specification, reference term " embodiment ", " specific embodiment ", " example " or " concrete example " etc.
Description means to combine this embodiment or example describes specific features, structure, material or feature be contained in this utility model
At least one embodiment or example in.In this manual, the schematic representation of above-mentioned term is necessarily directed to phase
Same embodiment or example.And, the specific features of description, structure, material or feature can be with one or more enforcements in office
Example or example combine in an appropriate manner.Additionally, in the case of the most conflicting, those skilled in the art can be by this
Different embodiments or the feature of example and different embodiment or example described in description are combined and combine.
Although above it has been shown and described that embodiment of the present utility model, it is to be understood that above-described embodiment is
Exemplary, it is impossible to it is interpreted as that those of ordinary skill in the art is in scope of the present utility model to restriction of the present utility model
In above-described embodiment can be changed, revise, replace and modification.
Claims (11)
1. the pressure cell for piezoresistance sensor, it is characterised in that including:
Conductor layer；
Pressure sensitive layer, described pressure sensitive layer cover described conductor layer upper surface at least some of on, described pressure
Sensitive layer is configured to the ratio resistance gradient from top to bottom of described pressure sensitive layer and is decreased or increased.
Pressure cell the most according to claim 1, it is characterised in that described pressure sensitive layer includes polymer gradient layer,
Conducting particles is distributed in described polymer gradient layer, wherein, the elastic modelling quantity of described polymer gradient layer and described conductive particle
At least one in son distributed density in described polymeric layer is formed with gradient from top to bottom.
Pressure cell the most according to claim 2, it is characterised in that described polymer gradient layer includes stacking from top to bottom
The multiple polymeric layers arranged, the elastic modelling quantity of each described polymeric layer is the most identical with the distributed density of conducting particles
And at least one in any one of elastic modelling quantity of polymeric layer and the distributed density of conducting particles is poly-with other described
The difference of compound layer.
Pressure cell the most according to claim 1, it is characterised in that described pressure sensitive layer includes what two stackings were arranged
Polymeric layer, the material of two described polymeric layers is identical and the kind of conducting particles in two described polymeric layers and distribution
Concentration is identical, conductive materials or insulant is also distributed in one of them the described polymeric layer in two described polymeric layers
Matter.
5. according to the pressure cell described in claim 3 or 4, it is characterised in that described polymeric layer be Silica-based polymer nitride layer or
Person's carbon-based polymer layer.
6. a piezoresistance sensor, it is characterised in that including:
Lower insulating barrier；
Upper insulating barrier, described upper insulating barrier is located at above described lower insulating barrier and spaced apart with described lower insulating barrier；
Wall, described wall be connected between described lower insulating barrier and described upper insulating barrier and with described lower insulating barrier and
The cooperation of described upper insulating barrier limits installation cavity；
Lower wire layer, described lower wire layer is located on the upper surface of described lower insulating barrier；
First varistor layer, it is interior and spaced apart with described upper insulating barrier that described first varistor layer is located at described installation cavity, and described first
Varistor layer is according to the pressure cell according to any one of claim 1-5, and described conductor layer is formed as described lower wire layer.
Piezoresistance sensor the most according to claim 6, also includes: conductive layer, and described conductive layer is positioned at described installation cavity
And be located between the first varistor layer and described upper insulating barrier, described conductive layer includes that multiple conductive part, multiple described conductive parts exist
Nested setting and two adjacent spaced apart settings of described conductive part in horizontal direction.
Piezoresistance sensor the most according to claim 7, it is characterised in that multiple described conductive parts be formed as multiple with one heart
Ring, along described concentric ring radially, the radial width of multiple described concentric rings increases the most successively.
9. according to the piezoresistance sensor described in claim 7 or 8, it is characterised in that also include: upper conductor layer, described upper conductor
Layer is located in described installation cavity and covers on described on the lower surface of insulating barrier, described conductive part be located at described upper conductor layer with
Between described first varistor layer and spaced apart with at least one of described upper conductor layer and described first varistor layer.
10. according to the piezoresistance sensor described in claim 7 or 8, it is characterised in that also include: the second varistor layer, described second
Varistor layer is formed as inverted described pressure cell, and described second varistor layer is positioned at described installation cavity and is located at described upper insulation
On the lower surface of layer, described conductive part is located between described first varistor layer and described second varistor layer and first pressure-sensitive with described
At least one of layer and described second varistor layer is spaced apart.
11., according to the piezoresistance sensor described in claim 7 or 8, also include: upper conductor layer or the second varistor layer, described conduction
Portion includes two, two the most spaced apart settings of described conductive part, and two described conductive parts are respectively provided on described
On conductor layer and described second varistor layer.
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