CN205845949U - Sinusoidal signal drives and closed loop controller - Google Patents
Sinusoidal signal drives and closed loop controller Download PDFInfo
- Publication number
- CN205845949U CN205845949U CN201620847482.9U CN201620847482U CN205845949U CN 205845949 U CN205845949 U CN 205845949U CN 201620847482 U CN201620847482 U CN 201620847482U CN 205845949 U CN205845949 U CN 205845949U
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- China
- Prior art keywords
- circuit
- ceramic substrate
- thick film
- gold
- film ceramic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
nullA kind of sinusoidal signal that both realized drives and the function of closed loop control，Save again assembling space and there is sinusoidal signal driving and the closed loop controller of good heat-sinking capability and reliability，Including shell，On shell, sintering has thick film ceramic substrate，Thick film ceramic substrate is provided with the golden conduction band using Gold conductor to make，Resistance in each circuit is made up of the resistance slurry being located on thick film ceramic substrate，Filter capacitor in described current rectifying and wave filtering circuit uses Surface Mount capacitor，Pliotron in described Surface Mount capacitor and drive circuit is installed on thick film ceramic substrate by hot plate welding respectively，Remaining components and parts and each circuit chips are installed on thick film ceramic substrate by bonding way，And described each chip is unpackaged chip，Each chip、Resistance、Pliotron、Surface Mount capacitor is attached by lead spun gold and gold conduction band，It is attached by outer lead spun gold between gold conduction band and shell pin.
Description
Technical field
This utility model relates to the sinusoidal signal of a kind of thick-film hybrid integration and drives and closed loop controller.
Background technology
Sinusoidal signal drives and closed loop controller is the control part for complete machine, specifically by the amplification electricity being sequentially connected with
Road, current rectifying and wave filtering circuit, automatic gain control circuit and drive circuit composition, inside also includes by oscillating circuit, signal
The noise generation circuit that reason circuit and sampling hold circuit are constituted, has automatic gain control function, can realize piezoelectric ceramics steady
Fixed mechanical shaking.Original circuit uses printed circuit board (PCB) to be substrate, and integrated plastic packaged circuitry chip and resistor-capacitor unit realize
The functions such as sinusoidal signal driving and closed loop control.It is contemplated that heat radiation and the problem such as anti-interference, not only take big in complete machine
Measure assembling space and be highly prone to the impact of environmental change, such as under the conditions of superhigh temperature, ultralow temperature, high humility, strong vibration etc.,
Pcb board can be caused to deform upon, plastic device cannot normally work or the fault such as inefficacy occurs, and reduces the reliability of circuit, accounts for
Big with space, assemble loaded down with trivial details.
Summary of the invention
The technical problems to be solved in the utility model is to provide one and is integrated by multiple elements simultaneously, has just both realized
String signal drives and the function of closed loop control, saves again assembling space and has the sinusoidal letter of good heat-sinking capability and reliability
Number drive and closed loop controller.
The sinusoidal signal that this utility model relates to drives and closed loop controller, including shell, is provided with and is sequentially connected with in shell
Amplifying circuit, current rectifying and wave filtering circuit, automatic gain control circuit and drive circuit and by oscillating circuit, signal processing circuit
The noise generation circuit constituted with sampling hold circuit, it is characterized in that: on shell, sintering has thick film ceramic substrate, in thickness
Film ceramic substrate is provided with the golden conduction band using Gold conductor to make, and the resistance in each circuit is by the electricity being located on thick film ceramic substrate
Resistance paste is constituted, and the filter capacitor in described current rectifying and wave filtering circuit uses Surface Mount capacitor, described Surface Mount capacitor and driving electricity
Pliotron in road is installed on thick film ceramic substrate by hot plate welding respectively, and remaining components and parts and each circuit chips are led to
Cross bonding way to be installed on thick film ceramic substrate, and described each chip is unpackaged chip, each chip, resistance, power three
Pole pipe, Surface Mount capacitor are attached by lead spun gold and gold conduction band, pass through outer lead between gold conduction band and shell pin
Spun gold is attached.
Described thick film ceramic substrate back metal layer sets the air slot leaving width as the transverse and longitudinal arranged crosswise of 0.5mm,
Be conducive to discharging the gas produced when slicker solder silver solder in sintering process melts, thus improve effective bonding plane of substrate and shell
Long-pending.
The utility model has the advantages that: this circuit has smaller group dress volume, use when assembling sintering process by substrate
It is sintered on base, by hot plate welding, Surface Mount capacitor and power three pipe pole is welded on thick film ceramic substrate, by power three
The heat that pole pipe produces is directly transferred to shell, greatly reduces contact resistance.Substrate and the effective bond area of shell reach
More than 75%, not only make circuit heat-sinking capability more outstanding, and substrate and shell fastness be good, it is ensured that power device can
By property, it is applicable to the working environment of-55 DEG C～+125 DEG C.
Accompanying drawing explanation
Fig. 1 is this utility model structural representation；
Fig. 2 is the top view of Fig. 1 (removing pipe cap)；
Fig. 3 is circuit block diagram of the present utility model；
Fig. 4 is driving circuit principle figure of the present utility model；
Fig. 5 is thick film ceramic substrate back metallization structure schematic diagram；
In figure, 1 is shell, and 2 is thick film ceramic substrate, and 3 is gold conduction band, and 4 is resistance, and 5 is chip, and 6 is pliotron, 7
For Surface Mount capacitor, 8 is lead spun gold, and 9 is outer lead spun gold, and 10 is shell pin, and 201 is air slot.
Detailed description of the invention
As shown in Figure 1 and Figure 2, this utility model includes metal hermetically sealed power shell 1, is provided with thick film on power shell 1
Ceramic substrate 2, as the substrate of integrated multiple components and parts, is provided with the amplification being sequentially connected with in shell 1 on thick film ceramic substrate 2
Circuit, current rectifying and wave filtering circuit, automatic gain control circuit and drive circuit and by oscillating circuit, signal processing circuit and sampling
The noise generation circuit that holding circuit is constituted, described drive circuit is by resistance R31-R40, operational amplifier U, power three pole
Pipe 6 (Q1-Q4) and electric capacity C13 are constituted, and are provided with the golden conduction band 3 using Gold conductor to make, in each circuit on thick film ceramic substrate
Resistance be made up of the resistance slurry being located on thick film ceramic substrate 2, filter capacitor in described current rectifying and wave filtering circuit uses table
Patch capacitor 7, the pliotron 6 in described Surface Mount capacitor 7 and drive circuit is installed in thick film by hot plate welding respectively and makes pottery
On ceramic chip 2, remaining components and parts and each circuit chips 5 are installed on thick film ceramic substrate 2 by bonding way, and described core
Sheet 5 is unpackaged chip.
Described thick film ceramic substrate 2 back face metalization layer sets the air slot leaving width as the transverse and longitudinal arranged crosswise of 0.5mm
201, be conducive to discharging the gas produced when slicker solder silver solder in sintering process melts, thus improve the most viscous of substrate and shell
Junction is amassed.
Carried out by lead spun gold 8 between each chip 5, resistance 4, pliotron 6, Surface Mount capacitor 7 and gold conduction band 3
Connect, be attached by outer lead spun gold 9 between gold conduction band 3 and shell pin 10 (pin 1-pin 32).
Claims (2)
1. sinusoidal signal drives and closed loop controller, including shell, is provided with amplifying circuit, the rectification filter being sequentially connected with in shell
Wave circuit, automatic gain control circuit and drive circuit and by oscillating circuit, signal processing circuit and sampling hold circuit structure
The noise generation circuit become, is characterized in that: on shell, sintering has thick film ceramic substrate, is provided with employing on thick film ceramic substrate
The golden conduction band that Gold conductor is made, the resistance in each circuit is made up of the resistance slurry being located on thick film ceramic substrate, described rectification
Filter capacitor in filter circuit uses Surface Mount capacitor, and the pliotron in described Surface Mount capacitor and drive circuit is respectively
Being installed on thick film ceramic substrate by hot plate welding, remaining components and parts and each circuit chips are installed in thick film by bonding way
On ceramic substrate, and described each chip is unpackaged chip, and each chip, resistance, pliotron, Surface Mount capacitor are by interior
Lead-in wire spun gold and gold conduction band are attached, and are attached by outer lead spun gold between gold conduction band and shell pin.
Sinusoidal signal the most according to claim 1 drives and closed loop controller, it is characterized in that: described thick film ceramic substrate is carried on the back
Face metal layer sets the air slot leaving width as the transverse and longitudinal arranged crosswise of 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620847482.9U CN205845949U (en) | 2016-08-04 | 2016-08-04 | Sinusoidal signal drives and closed loop controller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620847482.9U CN205845949U (en) | 2016-08-04 | 2016-08-04 | Sinusoidal signal drives and closed loop controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205845949U true CN205845949U (en) | 2016-12-28 |
Family
ID=57618197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620847482.9U Active CN205845949U (en) | 2016-08-04 | 2016-08-04 | Sinusoidal signal drives and closed loop controller |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205845949U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109286386A (en) * | 2018-12-03 | 2019-01-29 | 全讯射频科技(无锡)有限公司 | The filter of integrated varistor |
| CN110265364A (en) * | 2019-06-11 | 2019-09-20 | 贵州振华风光半导体有限公司 | A kind of high thermal conductivity beryllium oxide thick film substrate of high power integrated ciruit chip assembling |
-
2016
- 2016-08-04 CN CN201620847482.9U patent/CN205845949U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109286386A (en) * | 2018-12-03 | 2019-01-29 | 全讯射频科技(无锡)有限公司 | The filter of integrated varistor |
| CN110265364A (en) * | 2019-06-11 | 2019-09-20 | 贵州振华风光半导体有限公司 | A kind of high thermal conductivity beryllium oxide thick film substrate of high power integrated ciruit chip assembling |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |