CN205810842U - A kind of ultraviolet and infrared double color focus plane detector array - Google Patents
A kind of ultraviolet and infrared double color focus plane detector array Download PDFInfo
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- CN205810842U CN205810842U CN201620559122.9U CN201620559122U CN205810842U CN 205810842 U CN205810842 U CN 205810842U CN 201620559122 U CN201620559122 U CN 201620559122U CN 205810842 U CN205810842 U CN 205810842U
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Abstract
This patent discloses a kind of ultraviolet and infrared double color focus plane detector array.This structure single-chip integration Pt/CdS ultraviolet focal-plane and InSb infrared focus plane, Pt/CdS ultraviolet focal-plane is incident by front, owing to infra-red radiation can arrive InSb absorbed layer through CdS, such that it is able to detect while realizing ultraviolet radiation and infra-red radiation.Pt/CdS ultraviolet is 300～550nm and 2.9～5.7 μm with the service band of InSb infrared double color focus plane array.The advantage of this patent is, Pt/CdS ultraviolet and InSb infrared double color focus plane array structure medium ultraviolet focal plane and infrared focus plane are apart from close thus confocal, and ultraviolet infrared photosensitive unit consistency from top to bottom is conducive to the design of optical system.This patent suffers from highly important meaning for optimization design and the preparation of actual two-color device.
Description
Technical field
This patent relates to Pt/CdS Schottky joint ultraviolet detector device and InSb photovoltaic type infrared spectrum detecting device, specifically
Refer to carry out the dual-color detection method of ultraviolet band and infrared band based on Pt/CdS ultraviolet focal-plane and InSb infrared focus plane.
Background technology
The ability of multi-color detection has critically important status in advanced seeker system, by obtaining the signal of different-waveband
Can accurately distinguish temperature and the feature of object in search coverage.Compared to monochromatic probe, multi-color detection provides various dimensions
Contrast also can improve device sensitivity with basis signal Processing Algorithm.Such as, double color focus plane detector array can process
The radiation signal of two wave bands is removed the interference information such as background clutter and sunlight and is left behind target object.Double color focus plane battle array
Arrange owing to effective signal-to-noise ratio is widely used in earth planetary remote sensing, astronomical and military etc. higher than monochromatic focus planardetector array
Field.
Ultraviolet radiation wave band is 0.01 μm～0.4 μm, and the sun is then the strongest UV source.For different wave length
Ultraviolet absorbance in an atmosphere is the most different, and the wavelength ultraviolet radiation less than 280nm is the most all absorbed by air, and this
The ultraviolet radiation also referred to as non-solar-blind band of wave band.The ultraviolet of 300nm～400nm wave band can arrive ground, quilt through air
It is referred to as ultraviolet window.Military field ultraviolet detection technology is based primarily upon the detection of ultraviolet window near the ground.
For aerial object (being in uniform Lyα Forest), block and radiated also by the ultraviolet of atmospheric scattering
And self sends infra-red radiation, then ultraviolet/infrared double color focus plane array is by simultaneously to ultraviolet radiation signal and infra-red radiation
Signal is processed to detection or follows the tracks of this object, thus discrimination is substantially improved.The service band of CdS be 300nm～
500nm, including ultraviolet window and a part of visible light wave range, simultaneously because infra-red radiation has good transmission in CdS material
Property, so this material has having great advantage in the application of double-color detector.Choose bigger Pt Yu CdS of work function to be formed simultaneously
Schottky saves, and as the core of ultraviolet detector.Owing to InSb material has high-quantum efficiency, Gao Ling in middle-infrared band
The advantage of sensitivity and large scale array InSb focal plane arrays (FPA) processing technology are ripe, so infrared detection members then uses InSb red
Outer focal plane arrays (FPA).
This patent is by design Pt/CdS ultraviolet and InSb infrared double color focus plane array, and passes through ISE-TCAD software
The spectral response of this device of numerical computations and cross-talk, thus verify ultraviolet and the feasibility of IR dual spectral detection method.
Summary of the invention
This patent discloses a kind of ultraviolet and infrared double color focus plane detector and performance design thereof and preparation method.Pass through
Numerical Design obtains the spectral response corresponding to Pt/CdS ultraviolet and the structure of InSb infrared double color focus plane array and this structure
And service band, demonstrate the feasibility of this device dual-color detection.
A kind of ultraviolet infrared double color focus plane detector array, including n-type substrate InSb absorbed layer 4, SiO2Barrier layer 3, n
Type CdS absorbed layer 2, p-type InSb absorbed layer 5, the structure of described ultraviolet infrared double color focus plane detector array is: at N-shaped
It is followed successively by SiO above substrate InSb absorbed layer 42Barrier layer 3, N-shaped CdS absorbed layer 2 and Pt thin film 1, each spy of ultraviolet focal-plane
Surveying the electrode 6 corresponding to device pixel to be positioned on Pt thin film 1, the public electrode 7 of ultraviolet focal-plane is positioned on N-shaped CdS absorbed layer 2；
Being p-type InSb absorbed layer 5 at n-type substrate InSb absorbed layer 4 back side, the electrode 8 that infrared focal plane detector pixel is corresponding is positioned at p
On type InSb absorbed layer 5, the public electrode 9 of infrared focus plane is positioned on n-type substrate InSb absorbed layer 4；
Described n-type substrate InSb absorbed layer 4 thickness is dn, arsenic doping concn be Nn；
Described p-substrate InSb absorbed layer 5 thickness is dp, boron doping concentration be Np；
Described CdS absorbed layer 2 thickness is dcds, arsenic doping concn be Ncds；
Described Pt thin film 1 thickness is dpt。
Performance design and the preparation method of double-color detector are as follows:
1) .n type substrate InSb absorbed layer 4 is SiO above2Barrier layer 3, and 2 is N-shaped CdS absorbed layer, Pt thin film 1 surface
The electrode 6 electrode corresponding to ultraviolet focal-plane each detector pixel, 7 is the public electrode of ultraviolet focal-plane, p-type InSb
The electrode on absorbed layer 5 surface, 8 is the electrode that infrared focal plane detector pixel is corresponding, and 9 is the public electrode of infrared focus plane.
2). described n-type substrate InSb absorbed layer 4 thickness is dn, arsenic doping concn be Nn, described p-substrate InSb absorbed layer
Thickness is dp, boron doping concentration be Np, p district and n district are respectively mounted electrode 6 and 7 to measure output current signal simultaneously；
3). described Pt thin film 1 thickness is dpt, described CdS absorbed layer 2 thickness is dcds, arsenic doping concn be Ncds, exist simultaneously
Pt thin film and CdS absorbed layer are respectively mounted electrode 8,9 to measure output current signal.
4). build physical model.Finite time-domain calculus of finite differences (FDTD) and FInite Element (FEM) combined simulation is used to come device
Part carries out two-dimensional numerical analysis.During FDTD method analog electromagnetic field, first set up the data base of various material parameter, as
Electrical conductivity, relative dielectric constant and the relative permeabilities etc. that each frequency is corresponding, then carry out grid to the device architecture designed and draw
Point, bond material parameter and dispersive model use FDTD method calculate the magnetic distribution in target area and be converted into photoproduction load
Flow the distribution of sub-concentration.During FEM method analog device electrology characteristic, in conjunction with photoproduction carrier concentration distribution results, lead
Enter the parameters such as the mobility of material, band gap, absorptance, dielectric constant, and compound according to classical drift domination, SRH and
The electric current that the basic physical model calculating devices zero such as auger recombination are on the lower side.
5). arranging ambient temperature is T, and a length of λ of incident light wave of the ultraviolet detection pixel of centre, luminous power are incided in front
Perseverance is P, and the incident illumination of ultraviolet band can be absorbed by CdS absorbed layer, and infrared light then can be through CdS absorbed layer by InSb absorbed layer
Absorbing, the photoresponse rate in the case of being irradiated by numerical simulation different wave length incident illumination can obtain spectral response and cross-talk.
6). first prepare corresponding photo etched mask according to the scale of Pt/CdS ultraviolet and InSb infrared double color focus plane array
Version, then uses plasma enhanced chemical vapor deposition method (PECVD) growth thickness to be 1 μm with N-shaped InSb material for substrate
The SiO of left and right2, and then use physical vapor transport (PVT) at SiO2Superficial growth thickness is the N-shaped CdS monocrystalline about 5 μm.
7). clean CdS surface by acetone and methanol and use hydrochloric acid solution to remove the oxide layer on surface, then using
Ultraviolet photolithographic technology and etching technics make CdS mesa structure and Schottky joint window, then use radiofrequency magnetron sputtering technology
The Pt membrane electrode of growth high transmission rate is to form Schottky contacts, and obtains ultraviolet focal-plane array through stripping technology.
8). device is placed on clean glass plate (InSb substrate is upward), places appropriate wax also in device surrounding
Heating, after wax to be melted enters bottom device, rinses unnecessary wax with trichloro ethylene, and uses ether propanol flushing to disappear
Poison.N-shaped InSb substrate is polished thinning, and carries out ion implanting formation p+District, then by photoetching process, etching work
Skill, thermal evaporation method and stripping technology make InSb mesa structure and electrode.Finally heated glass plate and use trichloro ethylene
Rinse out the wax of adhesion to obtain Pt/CdS ultraviolet and InSb infrared double color focus plane array device.
The advantage of this patent is: Pt/CdS ultraviolet and InSb infrared double color focus plane array structure medium ultraviolet focal plane are with red
Outer focal plane is apart from close thus confocal, and ultraviolet infrared photosensitive unit consistency from top to bottom is conducive to the design of optical system.Double-colored
Focal plane arrays (FPA) medium ultraviolet focal plane is in infrared focus plane upper strata, and CdS absorbed layer is several for the incident illumination of infrared band
It is transparent.The design of mesa structure reduces the area of photosensitive region thus effectively reduces dark current and cross-talk.Pass through
The feasibility of the result verification of numerical simulation Pt/CdS ultraviolet and InSb infrared double color focus plane array dual-color detection, for reality
Preparation and the optimization of device provide theoretical direction.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of Pt/CdS ultraviolet and InSb infrared double color focus plane array.Wherein 1 is Pt thin film, and 2 are
N-shaped CdS absorbed layer, 3 is SiO2Barrier layer, 4 is N-shaped InSb absorbed layer, and 5 is p-type InSb collecting layer, and 6 is that ultraviolet focal-plane is every
Electrode corresponding to individual detector pixel, 7 is the public electrode of ultraviolet focal-plane, and 8 is that infrared focal plane detector pixel is corresponding
Electrode, 9 is the public electrode of infrared focus plane.
Fig. 2 is Pt/CdS ultraviolet and InSb infrared double color focus plane array normalization spectral response.
Fig. 3 is the cross-talk of Pt/CdS ultraviolet and InSb infrared double color focus plane array.
Detailed description of the invention
Below in conjunction with the accompanying drawings specific implementation of the patent mode is elaborated:
1. build Pt/CdS ultraviolet and InSb infrared double color focus plane array two dimensional model, CdS absorber thickness dcdsArrange
It is 4.5 μm, doping content NcdsIt is 1.6 × 10cm-3, Pt film thickness dptFor 8nm, ultraviolet photosensitive face length degree LUVIt is 25 μm.
InSb N-shaped absorber thickness dnIt is 9.2 μm, N-shaped doping content NnIt is 1015cm-3, p-type doping content NpIt is 1017cm-3.Infrared
Detection pixel photosurface length LIRIt is 15 μm, and the focal plane arrays (FPA) cycle is 50 μm, see Fig. 1.
2. build physical model.Use FDTD method to calculate the photoproduction carrier concentration distribution at simulated domain, then will
This result is coupled in the simulation of electricity part, and the electrical properties simulation process of device is combined according to drift domination, SRH
The basic physical mechanism such as model, auger recombination model, radiation recombination model and dispersive model carries out numerical computations, finally obtains electricity
The macroscopic physical quantities such as stream and voltage research and analyse the performance of device and further optimum structural parameter.
3. arranging ambient temperature is T=77K, incident optical power P=0.0001W/cm-2, lambda1-wavelength changes from 300nm
To 5.9 μm, obtained the normalization spectral response (figure of Pt/CdS ultraviolet and InSb infrared double color focus plane array by numerical simulation
2) and cross-talk (Fig. 3).
4. the service band of result of study display Pt/CdS ultraviolet and InSb infrared double color focus plane array be 300～
550nm (ultraviolet) and 2.9～5.7 μm (infrared).At ultraviolet band, device has peak response when a length of 500nm of incident light wave
Rate is 0.0403A/W, and at infrared band, has peak response rate 1.07A/W during a length of 5.1 μm of incident light wave.Pass through Numerical-Mode
Intend demonstrating Pt/CdS ultraviolet and InSb infrared double color focus plane array and can carry out the double-colored spy of ultraviolet band and infrared band
Survey.
5. determine Pt/CdS ultraviolet and the geometry of InSb infrared double color focus plane array according to numerical simulation result, first
First prepare corresponding lithography mask version according to the scale of this double color focus plane array, then use for substrate with N-shaped InSb material
Plasma enhanced chemical vapor deposition method (PECVD) growth thickness is the SiO about 1 μm2, and then use physical vapor transport
Method (PVT) is at SiO2Superficial growth thickness is the N-shaped CdS monocrystalline about 5 μm.
6. clean CdS surface by acetone and methanol and use hydrochloric acid solution to remove the oxide layer on surface, then using
Ultraviolet photolithographic technology and etching technics make CdS mesa structure and Schottky joint window, then use radiofrequency magnetron sputtering technology
The Pt membrane electrode of growth high transmission rate is to form Schottky contacts, and obtains ultraviolet focal-plane array through stripping technology.
7. device is placed on (InSb substrate is upward) on clean glass plate, places appropriate wax in device surrounding and add
Heat, after wax to be melted enters bottom device, rinses unnecessary wax with trichloro ethylene, and uses ether propanol flushing to disappear
Poison.N-shaped InSb substrate is polished thinning, and carries out ion implanting formation p+District, then by photoetching process, etching work
Skill, thermal evaporation method and stripping technology make InSb mesa structure and electrode.Finally heated glass plate and use trichloro ethylene
Rinse out the wax of adhesion to obtain Pt/CdS ultraviolet and InSb infrared double color focus plane array device.
Claims (1)
1. ultraviolet and an infrared double color focus plane detector array, including n-type substrate InSb absorbed layer (4) SiO2Barrier layer
(3), N-shaped CdS absorbed layer (2), p-type InSb absorbed layer (5), it is characterised in that:
The structure of described ultraviolet infrared double color focus plane detector array is: at n-type substrate InSb absorbed layer (4) the most successively
For SiO2Barrier layer (3), N-shaped CdS absorbed layer (2) and Pt thin film (1), the electricity corresponding to ultraviolet focal-plane each detector pixel
Pole (6) is positioned on Pt thin film (1), and the public electrode (7) of ultraviolet focal-plane is positioned on N-shaped CdS absorbed layer (2)；In n-type substrate
InSb absorbed layer (4) back side is p-type InSb absorbed layer (5), and the electrode (8) that infrared focal plane detector pixel is corresponding is positioned at p-type
On InSb absorbed layer (5), the public electrode (9) of infrared focus plane is positioned on n-type substrate InSb absorbed layer (4).
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| CN201620559122.9U CN205810842U (en) | 2016-06-12 | 2016-06-12 | A kind of ultraviolet and infrared double color focus plane detector array |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN108646404A (en) * | 2018-05-21 | 2018-10-12 | 复旦大学 | tunable focal plane array device and preparation method thereof |
-
2016
- 2016-06-12 CN CN201620559122.9U patent/CN205810842U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN105914252B (en) * | 2016-06-12 | 2017-06-27 | 中国科学院上海技术物理研究所 | Ultraviolet infrared double color focus plane detector array and its performance design and preparation method |
| CN108646404A (en) * | 2018-05-21 | 2018-10-12 | 复旦大学 | tunable focal plane array device and preparation method thereof |
| CN108646404B (en) * | 2018-05-21 | 2020-07-03 | 复旦大学 | Tunable focal plane array device and preparation method thereof |
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| GR01 | Patent grant | ||
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20161214 Effective date of abandoning: 20170627 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20161214 Effective date of abandoning: 20170627 |