CN205790075U - A kind of perovskite thin film solaode - Google Patents
A kind of perovskite thin film solaode Download PDFInfo
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- CN205790075U CN205790075U CN201620693493.6U CN201620693493U CN205790075U CN 205790075 U CN205790075 U CN 205790075U CN 201620693493 U CN201620693493 U CN 201620693493U CN 205790075 U CN205790075 U CN 205790075U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The utility model discloses a kind of perovskite thin film solaode, including the glass substrate set gradually, transparency electrode, electron transfer layer, perovskite light-absorption layer, hole transmission layer and metal electrode, wherein, described electron transfer layer includes the TiO set gradually according to the direction away from described transparency electrode2Compacted zone and TiO2Mesoporous layer, described TiO2PVP interface-modifying layer also it is coated with on mesoporous layer；Carbon black materials layer it is coated with between described hole transmission layer and described metal electrode.In the perovskite thin film solaode that this utility model embodiment provides, PVP interface-modifying layer and carbon black materials layer improve the counter electrode capacity gauge to hole-electron pair respectively, thus improve the performance of perovskite battery.
Description
Technical field
This utility model relates to technical field of solar batteries, particularly relates to a kind of perovskite thin film solaode.
Background technology
The perovskite solar energy electronic of organic inorganic hybridization has solvable liquefaction processing because of it, and preparation process energy consumption is low and relatively
High device efficiency causes everybody extensive concern.The particularly efficiency aspect of device, the perovskite solaode device of unijunction
Part efficiency has been over 20% up till now.Along with the lifting of device efficiency, the structure of device is also progressively developing, from dyestuff
The meso-hole structure that sensitized cells structure is similar, heterogeneous to the planar heterojunction structure and trans plane with fine and close electron transfer layer
Junction structure.
The structure of the most conventional perovskite battery mainly includes the glass substrate of lamination setting, transparency electrode, electronics successively
Transport layer, perovskite light-absorption layer, hole transmission layer and metal electrode.Wherein, excite after perovskite light-absorption layer extinction generation hole-
Electronics pair, transparency electrode is then collected hole by hole transmission layer by electron transfer layer collection electronics, metal electrode, is formed light
Electric current.If the electrode capacity gauge to hole-electron pair can be promoted, then can increase the photoelectric current of device output, improve
The performance of perovskite battery.
Utility model content
In view of this, this utility model provides a kind of perovskite thin film solaode, by changing device architecture
Enter, improve the electrode capacity gauge to hole-electron pair, improve the performance of perovskite battery.
To achieve these goals, this utility model have employed following technical scheme:
A kind of perovskite thin film solaode, including the glass substrate set gradually, transparency electrode, electron transfer layer,
Perovskite light-absorption layer, hole transmission layer and metal electrode, wherein, described electron transfer layer includes according to away from described transparent electrical
The TiO that the direction of pole sets gradually2Compacted zone and TiO2Mesoporous layer, described TiO2PVP modifying interface also it is coated with on mesoporous layer
Layer；Carbon black materials layer it is coated with between described hole transmission layer and described metal electrode.
Wherein, the thickness of described PVP interface-modifying layer is 10～20nm.
Wherein, the thickness of described carbon black materials layer is 80～100nm.
Wherein, described TiO2The thickness of compacted zone is 80～100nm, described TiO2The thickness of mesoporous layer is 60～100nm.
Wherein, the thickness of described perovskite light-absorption layer is 300～500nm.
Wherein, the thickness of described hole transmission layer is 150～200nm.
Wherein, described transparency electrode is FTO electrode or ITO electrode.
Wherein, described metal electrode is gold electrode, silver electrode or aluminum electrode.
Compared to prior art, the perovskite thin film solaode that this utility model embodiment provides, in electric transmission
It is provided with PVP interface-modifying layer in Ceng, hole transmission layer is provided with carbon black materials layer, PVP interface-modifying layer and white carbon black material
The bed of material improves the counter electrode capacity gauge to hole-electron pair respectively, thus improves the performance of perovskite battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of the perovskite thin film solaode that this utility model embodiment provides.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with the accompanying drawings to this utility model
Detailed description of the invention be described in detail.The example of these preferred implementations is illustrated in the accompanying drawings.Institute in accompanying drawing
The embodiment of the present utility model shown and describe with reference to the accompanying drawings is merely exemplary, and this utility model is not limited to this
A little embodiments.
Here, also, it should be noted in order to avoid having obscured this utility model because of unnecessary details, in the accompanying drawings
Illustrate only and according to the closely-related structure of scheme of the present utility model and/or process step, and eliminate and this practicality
Other details that new relationship is little.
Present embodiments provide a kind of perovskite thin film solaode, as it is shown in figure 1, described perovskite thin film solar energy
Glass substrate 1 that battery includes setting gradually, transparency electrode 2, electron transfer layer 3, perovskite light-absorption layer 4, hole transmission layer 5 with
And metal electrode 6.
Wherein, described electron transfer layer 3 includes the TiO set gradually according to the direction away from described transparency electrode 22Fine and close
Layer 31 and TiO2Mesoporous layer 32, described TiO2PVP (polyvinylpyrrolidone, Polyvinyl also it is coated with on mesoporous layer 32
Pyrrolidone) interface-modifying layer 33.Further, it is coated with charcoal between described hole transmission layer 5 and described metal electrode 6
Black-materials layer 7.
Specifically, described transparency electrode 2 can be chosen as FTO electrode or ITO electrode.
Specifically, described TiO2The thickness of compacted zone 31 can be chosen as 80～100nm.Metatitanic acid four by 5～40mM is different
Propyl ester aqueous isopropanol is spun in transparency electrode 2, rotating speed 3000-6000rpm.Carry out the high temperature anneal afterwards, it is thus achieved that institute
State TiO2Compacted zone 31.
Specifically, described TiO2The thickness of mesoporous layer 32 can be chosen as 60～100nm.Using particle diameter is 10～30nm
Titania nanoparticles slurry, uses spin coating or is screen printed onto described TiO2Layer of titanium dioxide is deposited on compacted zone 31
Nano-particle layer, sinters 10～60min at 400 DEG C～550 DEG C, it is thus achieved that described TiO2Mesoporous layer 32.
Specifically, the thickness of described PVP interface-modifying layer 33 can be chosen as 10～20nm.PVP is dissolved in isopropanol
In so that the concentration of PVP is 0.5～1.5mg/mL；The aqueous isopropanol of the PVP configured is sprayed to described TiO2Mesoporous layer
On 32, it is thus achieved that described PVP interface-modifying layer 33.
Specifically, the thickness of described perovskite light-absorption layer 4 can be chosen as 300～500nm.Described perovskite light-absorption layer 4
Preparation process include: by methylamine iodine material and PbX2Materials such as (X=Cl, Br, I) is dissolved in solvent together, forms presoma
Solution；Use precursor solution spin-coating film, then annealing forms perovskite thin film on hot plate.Conventional, synthesis concentration is about
The CH of 40wt%3NH3PbIxCl3-xThe DMF solution of (0 < x < 3), after spin-coating film at a temperature of 80～100 DEG C anneal 30～
80min, it is thus achieved that perovskite light-absorption layer 4.
Specifically, the thickness of described hole transmission layer 5 can be chosen as 150～200nm.Described hole transmission layer 5 deposits
In the surface of perovskite light-absorption layer 4, play transporting holes, the effect of stop electronics.Described hole transmission layer 5 is selected has high hole
The material of mobility, can select organic material, it is also possible to selecting inorganic material, wherein organic material is selected from Spiro-
Any one in OMeTAD, P3HT, PCPDTBT, PEDOT:PSS, NPB and TPD, inorganic material selected from CuI, CuSCN, NiO,
V2O5And MoO3In any one, preferably Spiro-OMeTAD.Hole transmission layer 5 preparation method is that hole mobile material is equal
Even it is scattered in organic solvent, forms the solution of clear homogeneous, this solution is coated with by spin-coating method, czochralski method or silk screen print method
Overlay on the surface of perovskite light-absorption layer 4, it is thus achieved that described hole transmission layer 5.
Specifically, the thickness of described carbon black materials layer 7 can be chosen as 80～100nm.White carbon black is dissolved in isopropanol,
The concentration making white carbon black is 10～12mg/mL；The aqueous isopropanol of the white carbon black configured is sprayed to described hole transmission layer 5
On；Then under conditions of temperature is 120～150 DEG C, 5～10min are heated, it is thus achieved that described carbon black materials layer 7.Wherein, heating
Purpose mainly removes isopropanol therein.
Specifically, described metal electrode is gold electrode, silver electrode or aluminum electrode, and metal deposition process preparation can be used to obtain
?.
Compared to prior art, the perovskite thin film solaode that this utility model embodiment provides, in electric transmission
It is provided with PVP interface-modifying layer in Ceng, hole transmission layer is provided with carbon black materials layer, PVP interface-modifying layer and white carbon black material
The bed of material improves the counter electrode capacity gauge to hole-electron pair respectively, thus improves the performance of perovskite battery.
It should be noted that in this article, the relational terms of such as first and second or the like is used merely to a reality
Body or operation separate with another entity or operating space, and deposit between not necessarily requiring or imply these entities or operating
Relation or order in any this reality.And, term " includes ", " comprising " or its any other variant are intended to
Comprising of nonexcludability, so that include that the process of a series of key element, method, article or equipment not only include that those are wanted
Element, but also include other key elements being not expressly set out, or also include for this process, method, article or equipment
Intrinsic key element.In the case of there is no more restriction, statement " including ... " key element limited, it is not excluded that
Including process, method, article or the equipment of described key element there is also other identical element.
The above is only the detailed description of the invention of the application, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the application principle, it is also possible to make some improvements and modifications, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (8)
1. a perovskite thin film solaode, including the glass substrate set gradually, transparency electrode, electron transfer layer, calcium
Titanium ore light-absorption layer, hole transmission layer and metal electrode, it is characterised in that
Described electron transfer layer includes the TiO set gradually according to the direction away from described transparency electrode2Compacted zone and TiO2Mesoporous
Layer, described TiO2PVP interface-modifying layer also it is coated with on mesoporous layer；
Carbon black materials layer it is coated with between described hole transmission layer and described metal electrode.
Perovskite thin film solaode the most according to claim 1, it is characterised in that described PVP interface-modifying layer
Thickness is 10～20nm.
Perovskite thin film solaode the most according to claim 1, it is characterised in that the thickness of described carbon black materials layer
It is 80～100nm.
4. according to the arbitrary described perovskite thin film solaode of claim 1-3, it is characterised in that described TiO2Compacted zone
Thickness be 80～100nm, described TiO2The thickness of mesoporous layer is 60～100nm.
5. according to the arbitrary described perovskite thin film solaode of claim 1-3, it is characterised in that described perovskite extinction
The thickness of layer is 300～500nm.
6. according to the arbitrary described perovskite thin film solaode of claim 1-3, it is characterised in that described hole transmission layer
Thickness be 150～200nm.
7. according to the arbitrary described perovskite thin film solaode of claim 1-3, it is characterised in that described transparency electrode is
FTO electrode or ITO electrode.
8. according to the arbitrary described perovskite thin film solaode of claim 1-3, it is characterised in that described metal electrode is
Gold electrode, silver electrode or aluminum electrode.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638163A (en) * | 2018-12-17 | 2019-04-16 | 齐齐哈尔大学 | It is a kind of using phosphotungstic acid as the perovskite solar battery and preparation method of boundary layer |
| CN110858624A (en) * | 2018-08-22 | 2020-03-03 | 中国科学院化学研究所 | Polyvinylpyrrolidone cathode interface layer prepared by adsorption method and application thereof |
-
2016
- 2016-07-04 CN CN201620693493.6U patent/CN205790075U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110858624A (en) * | 2018-08-22 | 2020-03-03 | 中国科学院化学研究所 | Polyvinylpyrrolidone cathode interface layer prepared by adsorption method and application thereof |
| CN110858624B (en) * | 2018-08-22 | 2021-06-01 | 中国科学院化学研究所 | Polyvinylpyrrolidone cathode interface layer prepared by adsorption method and application thereof |
| CN109638163A (en) * | 2018-12-17 | 2019-04-16 | 齐齐哈尔大学 | It is a kind of using phosphotungstic acid as the perovskite solar battery and preparation method of boundary layer |
| CN109638163B (en) * | 2018-12-17 | 2020-10-09 | 齐齐哈尔大学 | Perovskite solar cell with phosphotungstic acid as interface layer and preparation method |
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