CN205723436U - A kind of L-band, the controlled high-power pulsed ion beams of Ku waveband double-frequency - Google Patents
A kind of L-band, the controlled high-power pulsed ion beams of Ku waveband double-frequency Download PDFInfo
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- CN205723436U CN205723436U CN201620308849.XU CN201620308849U CN205723436U CN 205723436 U CN205723436 U CN 205723436U CN 201620308849 U CN201620308849 U CN 201620308849U CN 205723436 U CN205723436 U CN 205723436U
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Abstract
The open a kind of L-band of this utility model, the controlled high-power pulsed ion beams of Ku waveband double-frequency, including: insulating end, the L-band Relativistic backward-wave oscillator being connected with insulating end, it is provided with negative electrode in described insulating end, described negative electrode sends out negative electrode for double diameter electron beams, Ku wave band Relativistic backward-wave oscillator it is provided with in the cavity of described L-band Relativistic backward-wave oscillator, L-band Relativistic backward-wave oscillator and Ku wave band Relativistic backward-wave oscillator are fixed as one by supporting annulus, described L-band Relativistic backward-wave oscillator, Ku wave band Relativistic backward-wave oscillator, negative electrode is arranged on same level axis；This utility model utilizes the construction features research of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as high band device, controlled pair of diameter electron beam is utilized to make Relativistic backward-wave oscillator can be sequentially generated L-band as required, Ku wave band single frequency high-power microwave, or produce L-band, Ku waveband double-frequency High-Power Microwave simultaneously.
Description
Technical field
Patent of the present invention relates to high-power pulsed ion beams technical field, is specifically related to a kind of L-band, the controlled high-power pulsed ion beams of Ku waveband double-frequency.
Background technology
In recent years, high-power microwave source, while pursuing high power, high efficiency and realizing long pulse and Gao Zhongying operation, also presents other some development characteristic, has the microwave of multiple frequency as pursued the generation of single microwave source device.The device of the type is capable of the multifrequency output of single agitator, is the expansion research to single-frequency oscillator and integrated innovation application, has certain learning value and potential application prospect.Relativistic backward-wave oscillator has high power, high efficiency, is suitable for the work characteristics that repetition runs, it is that current most potential High-Power Microwave produces one of device, occupy an important position in High-Power Microwave produces device, the research of multifrequency Relativistic backward-wave oscillator is conducive to expanding its application further, has important practical significance.
Due to the application potential of High-Power Microwave, build especially as complex electromagnetic environment so that High-Power Microwave technology is the most tempting in the effect of hyundai electronics message context.If it has recently been demonstrated that attack electronic system by the high power microwave beam of two or more frequencies, required damage threshold can reduce, and uses this technology that power microwave technology can be made to tend to practical quickly.But, generation its essence of double-frequency high-power microwave method of report is and overlaps single single-frequency microwave source with two both at home and abroad, and this method comes with some shortcomings: the microwave source synchronism output of first two sets or many set independent operatings will exist certain difficulty；Secondly, the space radiation pattern of the microwave source of two sets or many set independent operatings is complex, is unfavorable for the actual application of High-Power Microwave；It addition, the microwave source of two set independent operatings also can increase research cost.Therefore, study a kind of energy controlled output difference single-frequency or simultaneously output two frequencies microwave source will there is important learning value and using value, this is also another new research direction of High-Power Microwave technical research, will provide excellent basis for high power microwave effects research.
Current various communication and detection microwave frequency band are concentrated mainly on L ~ Ku wave band.Simply judge certain high-power pulsed ion beams physical dimension from frequency, more than 10 times of the high-power pulsed ion beams of the high-power pulsed ion beams physical dimension of 1GHz the chances are 14.25GHz.If L-band and the High-Power Microwave of Ku wave band can be realized in same device, then the High-Power Microwave of other frequency ranges can radiate generation substantially in a device.
Summary of the invention
It is an object of the invention to utilize the construction features research of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as high band device, controlled pair of diameter electron beam is utilized to make Relativistic backward-wave oscillator can be sequentially generated L as required, Ku wave band single frequency high-power microwave, or produce L, Ku waveband double-frequency High-Power Microwave simultaneously.Low frequency and high-frequency element in the present invention can design accordingly according to actual frequency demand, and flexible structure is changeable, can well realize greatly across the generation of the controlled High-Power Microwave of waveband double-frequency in high-power pulsed ion beams.
For achieving the above object, the present invention adopts the following technical scheme that
A kind of L-band, the controlled high-power pulsed ion beams of Ku waveband double-frequency, including: the L-band Relativistic backward-wave oscillator that insulating end is connected with insulating end,
It is provided with negative electrode in described insulating end, described negative electrode sends out negative electrode for double diameter electron beams, Ku wave band Relativistic backward-wave oscillator it is provided with in the cavity of described L-band Relativistic backward-wave oscillator, L-band Relativistic backward-wave oscillator and Ku wave band Relativistic backward-wave oscillator are fixed as one by supporting annulus, described L-band Relativistic backward-wave oscillator, Ku wave band Relativistic backward-wave oscillator, negative electrode is arranged on same level axis, the end of described L-band Relativistic backward-wave oscillator is provided with Dual Spectral Radiation antenna medium window, Ku wave band Relativistic backward-wave oscillator end is provided with spoke side, described Dual Spectral Radiation antenna medium window, insulating end, negative electrode, L-band, Ku wave band Relativistic backward-wave oscillator constitutes vacuum chamber.
In technique scheme, described Ku wave band Relativistic backward-wave oscillator and L-band Relativistic backward-wave oscillator are in isoelectric level state by supporting annulus.
In technique scheme, described support annulus is provided with two, and two spacing supporting annulus are 1/4th L-band wavelength.
In technique scheme, the spoke side external dimensions structure of described Ku wave band Relativistic backward-wave oscillator is mode converter, and inside dimension structure is Ku wave band device radiating horn antenna.
In technique scheme, described mode converter is L-band TEM mode to TM01The mode converter of pattern.
In technique scheme, the minimum emission ratio that thickness is Ku wave band and L-band of described Dual Spectral Radiation antenna medium window.
In technique scheme, described pair of diameter electron beam sends out the cavity in one of them negative electrode correspondence Ku wave band Relativistic backward-wave oscillator of negative electrode, and another negative electrode corresponds to the space between Ku wave band Relativistic backward-wave oscillator and L-band Relativistic backward-wave oscillator.
In technique scheme, described pair of diameter electron beam is sent out two negative electrodes in negative electrode and is hollow cathode pipe, and the electron beam that described hollow cathode pipe is launched is annular electron beam.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows:
The present invention utilizes the construction features research of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as high band device, controlled pair of diameter electron beam is utilized to make Relativistic backward-wave oscillator can be sequentially generated L-band as required, Ku wave band single frequency high-power microwave, or produce L-band, Ku waveband double-frequency High-Power Microwave simultaneously.Low frequency and high-frequency element in the present invention can design accordingly according to actual frequency demand, and flexible structure is changeable, can well realize greatly across the generation of the controlled High-Power Microwave of waveband double-frequency in high-power pulsed ion beams.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the front section view of the present invention；
Fig. 2 is cathode construction schematic diagram in the present invention；
Wherein: 1 is insulating end, 2 is negative electrode, 3 is L-band Relativistic backward-wave oscillator, 4 is Ku wave band Relativistic backward-wave oscillator, 5 is the annular electron beam for transmitting in L-band Relativistic backward-wave oscillator, and 6 is the annular electron beam of transmission in Ku wave band Relativistic backward-wave oscillator, and 7 is to support annulus, 8 is radiation tail end, and 9 is active antenna medium window.
Detailed description of the invention
As shown in Figure 1, the present invention utilizes the construction features research of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as high band device, controlled pair of diameter electron beam is utilized to make Relativistic backward-wave oscillator can be sequentially generated L-band as required, Ku wave band single frequency high-power microwave, or produce L-band, Ku waveband double-frequency High-Power Microwave simultaneously.Controlled double diameter negative electrode of launching is become by coaxial inside and outside annular cathode sets, and is connected with the screw rod with true left-hand thread.By the controllable rotary of screw rod, it is achieved the controlled list inside and outside diameter electron beam of double transmitting diameters is launched, or double diameter electron beam is launched simultaneously.
The big method for designing using preposition reflection cavity, rearmounted power draw chamber and electron beam to interact with forward-wave in the controlled Relativistic backward-wave oscillator of waveband double-frequency in L-band device, under ensureing bundle ripple conversion efficiency premise, decrease the slow-wave structure cycle, significantly reduce device axial dimension；Ku wave band device uses preposition electron beam premodulated method for designing, makes full use of L-band device axial space, and bundle ripple conversion efficiency is greatly improved.
At Ku wave band device end, it is connected with L-band device by the support annulus of two interval 1/4th L-band wavelength.The device making two wave bands is in isoelectric level state.As the Ku wave band device radiation tail end of coaxial inner conductor, its external dimensions structure is L-band TEM mode to TM01The mode converter of pattern, its inside dimension structure is Ku wave band device radiating horn antenna.
At big L-band active antenna medium window (material is generally politef) in the controlled Relativistic backward-wave oscillator of waveband double-frequency, simultaneously as Ku wave band active antenna medium window.The medium window thickness each required according to calculated two band microwave and natural relation curve, finally determine the optimum thickness of medium window.Now, the reflection of two band microwave is all minimized by medium window.
As in figure 2 it is shown, the negative electrode that the present invention uses individually is applied in separate case patent, concrete scheme is shown in (application number: 2015108093969).
In conjunction with strong current electron beam emission of cathode diameter tunable arrangement front view in the controlled Relativistic backward-wave oscillator of waveband double-frequency big in Fig. 1 and Fig. 2, the emitting cathode of two different-diameters is connected again with corresponding right-and-left threaded screw rod be positioned at cathode central line position by positive/negative thread.Screw rod is rotated clockwise by the swing handle of negative electrode rear end, the explosive emission cathode internal of the emitting cathode contracting of major diameter, no longer launch electronics；The emitting cathode that diameter is less leans out from cathode internal, when the emitting cathode of minor diameter arrives design cathode and anode spacing, generation electron beam is launched, and annular electron beam transmits in Ku wave band Relativistic backward-wave oscillator, and now device radiation produces Ku wave band High-Power Microwave.Screw rod is rotated counterclockwise by the swing handle of negative electrode rear end, the emitting cathode of major diameter leans out from cathode internal, when the emitting cathode of major diameter arrives design cathode and anode spacing, generation electron beam is launched, annular electron beam transmits in L-band Relativistic backward-wave oscillator, and now device radiation produces L-band High-Power Microwave.The explosive emission cathode internal of the emitting cathode contracting of minor diameter, no longer launches electronics.Or two negative electrodes launch generation electron beam, produce Ku wave band High-Power Microwave and L-band High-Power Microwave simultaneously simultaneously.
The invention is not limited in aforesaid detailed description of the invention.The present invention expands to any new feature disclosed in this manual or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (8)
1. a L-band, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that including: the L-band Relativistic backward-wave oscillator that insulating end is connected with insulating end, it is provided with negative electrode in described insulating end, described negative electrode sends out negative electrode for double diameter electron beams,
Being provided with Ku wave band Relativistic backward-wave oscillator in the cavity of described L-band Relativistic backward-wave oscillator, L-band Relativistic backward-wave oscillator and Ku wave band Relativistic backward-wave oscillator are fixed as one by supporting annulus,
Described L-band Relativistic backward-wave oscillator, Ku wave band Relativistic backward-wave oscillator, negative electrode are arranged on same level axis, the end of described L-band Relativistic backward-wave oscillator is provided with Dual Spectral Radiation antenna medium window, Ku wave band Relativistic backward-wave oscillator end is provided with spoke side, and described Dual Spectral Radiation antenna medium window, insulating end, negative electrode, L-band, Ku wave band Relativistic backward-wave oscillator constitute vacuum chamber.
A kind of L-band the most according to claim 1, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that described Ku wave band Relativistic backward-wave oscillator and L-band Relativistic backward-wave oscillator are in isoelectric level state by supporting annulus.
A kind of L-band the most according to claim 2, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that described support annulus is provided with two, two spacing supporting annulus are 1/4th L-band wavelength.
A kind of L-band the most according to claim 1, the controlled high-power pulsed ion beams of Ku waveband double-frequency, the spoke side external dimensions structure that it is characterized in that described Ku wave band Relativistic backward-wave oscillator is mode converter, and inside dimension structure is Ku wave band device radiating horn antenna.
A kind of L-band the most according to claim 4, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that described mode converter is L-band TEM mode to TM01The mode converter of pattern.
A kind of L-band the most according to claim 1, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that the minimum emission ratio that thickness is Ku wave band and L-band of described Dual Spectral Radiation antenna medium window.
A kind of L-band the most according to claim 1, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterized in that described pair of diameter electron beam sends out the cavity in one of them negative electrode correspondence Ku wave band Relativistic backward-wave oscillator of negative electrode, another negative electrode corresponds to the space between Ku wave band Relativistic backward-wave oscillator and L-band Relativistic backward-wave oscillator.
A kind of L-band the most according to claim 7, the controlled high-power pulsed ion beams of Ku waveband double-frequency, it is characterised in that described pair of diameter electron beam is sent out two negative electrodes in negative electrode and be hollow cathode pipe, and the electron beam that described hollow cathode pipe is launched is annular electron beam.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN106971929A (en) * | 2017-04-26 | 2017-07-21 | 中国工程物理研究院应用电子学研究所 | A kind of across wave band controllable Relativistic backward-wave oscillator of multifrequency |
| CN108682605A (en) * | 2018-05-21 | 2018-10-19 | 中国工程物理研究院应用电子学研究所 | A kind of two cavity high power microwave generators of coupling and application method |
| CN108807112A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of interdigital arrangement high-power pulsed ion beams of coaxial double dielectrics |
| CN109585242A (en) * | 2018-11-08 | 2019-04-05 | 西北核技术研究所 | A kind of double-frequency high-power microwave generator |
| CN112687504A (en) * | 2020-12-24 | 2021-04-20 | 西安交通大学 | Double-electron-beam relativistic backward wave tube capable of directly outputting double-frequency microwaves |
-
2016
- 2016-04-14 CN CN201620308849.XU patent/CN205723436U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN106971929A (en) * | 2017-04-26 | 2017-07-21 | 中国工程物理研究院应用电子学研究所 | A kind of across wave band controllable Relativistic backward-wave oscillator of multifrequency |
| CN106971929B (en) * | 2017-04-26 | 2018-08-14 | 中国工程物理研究院应用电子学研究所 | The controllable Relativistic backward-wave oscillator of across the wave band multifrequency of one kind |
| CN108682605A (en) * | 2018-05-21 | 2018-10-19 | 中国工程物理研究院应用电子学研究所 | A kind of two cavity high power microwave generators of coupling and application method |
| CN108807112A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of interdigital arrangement high-power pulsed ion beams of coaxial double dielectrics |
| CN109585242A (en) * | 2018-11-08 | 2019-04-05 | 西北核技术研究所 | A kind of double-frequency high-power microwave generator |
| CN112687504A (en) * | 2020-12-24 | 2021-04-20 | 西安交通大学 | Double-electron-beam relativistic backward wave tube capable of directly outputting double-frequency microwaves |
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Granted publication date: 20161123 Effective date of abandoning: 20180320 |
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