CN205620072U - Thin film transistor pressure sensor based on organic elastomer gate insulation layer - Google Patents
Thin film transistor pressure sensor based on organic elastomer gate insulation layer Download PDFInfo
- Publication number
- CN205620072U CN205620072U CN201521077671.4U CN201521077671U CN205620072U CN 205620072 U CN205620072 U CN 205620072U CN 201521077671 U CN201521077671 U CN 201521077671U CN 205620072 U CN205620072 U CN 205620072U
- Authority
- CN
- China
- Prior art keywords
- thin film
- film transistor
- insulation layer
- gate insulation
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Thin Film Transistor (AREA)
- Pressure Sensors (AREA)
Abstract
The utility model discloses a thin film transistor pressure sensor based on organic elastomer gate insulation layer. This pressure sensor structure is top bars stagger arrangement type structure, mainly includes: take place deformation behind the pressurized, organic elastomer that the rapid reconversion in back was dismantled to pressure is as the gate insulation layer, electricity excellent performance's inorganic semi conducting material is as the active layer. The pressure that the thin film transistor grid received makes the actual thickness on organic elastomer gate insulation layer change to influence gate insulation layer electric capacity, and then change inorganic semiconductor thin film transistor's drain current, can reflect the size that the grid was stressed through the detection to the drain current.
Description
Technical field
This utility model relates to MEMS pressure sensor field, is more particularly to a kind of gate insulation layer and can occur elastically-deformable
Inorganic semiconductor thin film transistor (TFT) pressure transducer.
Background technology
Traditional pressure type sensor mainly includes resistance-type, inductance type and condenser type three major types, respectively by device mainly group
Becoming the resistance of structure, inductance and electric capacity to change under external pressure, recycling measuring circuit is by the change of these three physical quantity
Change the change finally giving voltage through a series of process and conversion, thus reach to detect the purpose of external pressure change.This kind of
Sensor not only needs the measuring circuit of complexity, and the change of pressure easily causes bigger error, no via the conversion of multiple electrical quantities
It is beneficial to the raising of Pressure Sensor Precision.The OTFT sensor occurred in recent years uses organic semiconducting materials to make device
The active layer of part, but the carrier mobility of organic semiconducting materials is low, and the thin film transistor (TFT) of formation needs very when normal work
Big bias voltage, causes power consumption to increase, and the major part organic semiconducting materials life-span is shorter, has a strong impact on device electric property
Long-time stability.
Utility model content
For overcoming disadvantages mentioned above, the utility model proposes a kind of inorganic semiconductor thin film with organic elastomer as gate insulation layer brilliant
Body pipe pressure sensor.
In order to realize above-mentioned utility model purpose, this utility model provides the technical scheme of complete set:
A kind of inorganic semiconductor thin film transistor (TFT) pressure sensor structure with organic elastomer body thin film as gate insulation layer, mainly wraps
Include: top-gated staggered thin-film transistor structure；Organic elastomer gate insulation layer；The inorganic semiconductor active layer that electric property is excellent.
Described top-gated staggered thin-film transistor structure, is different from traditional capacitance pressure transducer, is leaked by detection thin film transistor (TFT)
Electrode current rather than the change of dielectric layer electric capacity, directly reflection grid pressure situation；Source/drain electrode is divided with top gate electrode
Cloth, at active layer the most not homonymy, does not affect organic elastomer/inorganic semiconductor interface, is conducive to improving the stability of device.
Described top-gated staggered thin film transistor (TFT) is by its drain electrode output electric current IDChange directly reflect grid pressure feelings
Condition；First top-gated staggered structure particularly as follows: deposit source/drain electrode on substrate, and deposit subsequently covers the inorganic of source/drain electrode
Semiconductor active layer, makes the source/drain contact of device be positioned at the lower surface of inorganic semiconductor active layer, and active to inorganic semiconductor
Layer surface carries out process and obtains flat surfaces, then deposit organic elastomer gate insulation layer, and finally deposit covers whole top device
The top gate electrode thin layer in region, and it is allowed to that there is smooth surface；The gate electrode of described top-gated staggered thin film transistor (TFT) is positioned at
The top of whole device, source/drain electrode contacts with the lower surface of inorganic semiconductor active layer, and top gate electrode controls inorganic half
Conductor active layer upper surface forms conducting channel, i.e. source/drain contact is positioned at the upper and lower of inorganic semiconductor active layer with top gate electrode
Not homonymy.
Described organic elastomer material for the gate insulation layer of thin film transistor (TFT), organic elastomer gate insulation layer use have excellent absolutely
The organic elastomer material of edge and high-k is compared to being that dielectric transistor sensor has sensitivity more with air
Height, the feature that performance is more stable.The active layer of described thin film transistor (TFT) is the inorganic semiconductor material that electric property is excellent, phase
Than having in organic semiconductor thin film transistor sensor, sensitivity is higher, power consumption is lower, the more preferable feature of long-time stability.
The top-gated staggered thin-film transistor structure that this utility model uses, top grid insulating barrier can be with extraneous stress generation shape
Become, directly result in the change of device drain current.Gate electrode and source/drain electrode are positioned at semiconductor active layer the most not homonymy, have
It is beneficial to be formed good gate insulation layer/active layer interface, improves device stability；
, there is elastic deformation in organic elastomer gate insulation layer, pressure recovers rapidly after removing after pressurized, inorganic partly leads for described
Body thin film transistor top gate insulating barrier, can deform upon in a thickness direction with gate planar pressure, make the gate insulation layer of device
Thickness produces change, and then affects the drain current of device.
The inorganic semiconductor active layer that electric property is excellent, its carrier mobility is bigger, stable chemical nature, as thin film
The active layer of transistor can obtain electric property and the long-time stability being better than major part organic semiconductor thin film transistor.
Compared with prior art, this utility model has the advantage that and technique effect:
The inorganic semiconductor pressure transducer with organic elastomer body thin film as gate insulation layer that the utility model proposes, can directly pass through
The pressure size of top device grid is detected by the change of device drain output electric current, has higher in the range of certain pressure
Sensitivity.Compared to capacitance pressure transducer, the testing circuit of the pressure transducer that the utility model proposes is the simplest；
Compared with OTFT pressure transducer, during proper device operation, required bias voltage is little, low in energy consumption, and has higher
Long term device stability.
Accompanying drawing explanation
Fig. 1 be organic elastomer be the structural representation of the inorganic semiconductor thin film transistor (TFT) pressure transducer of gate insulation layer.
Fig. 2 be organic elastomer be the fundamental diagram of the inorganic semiconductor thin film transistor (TFT) pressure transducer of gate insulation layer.
Fig. 3 is that in example, organic elastomer is the drain electrode output electric current of the inorganic semiconductor thin film transistor (TFT) pressure transducer of gate insulation layer
IDRelation with gate stress P.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, this utility model is described in further detail, but embodiment party of the present utility model
Formula is not limited to this, if it is noted that there be process or the raw material parameter of not detailed description especially below, being all people in the art
Member can refer to prior art realize or understand.
With reference to Fig. 1, this example gives the inorganic semiconductor thin film transistor (TFT) pressure transducer that organic elastomer is gate insulation layer
A kind of specific embodiment, its main material and construction features include: top-gated staggered thin film transistor (TFT)；Polydimethylsiloxane
(PDMS) organic elastomer is as gate insulation layer；Amorphous indium gallium zinc oxygen (a-IGZO) inorganic semiconductor is as active layer.Thin film is brilliant
Body pipe (TFT) device overall length is 20 μm, a width of 180 μm, and for top-gated staggered structure, " top-gated " refers to this utility model
The gate electrode of described thin film transistor (TFT) is positioned at the top of whole device, and " stagger arrangement " refers to the lower surface of source/drain electrode and active layer
Contact, and top gate electrode controls active layer upper surface and forms conducting channel, i.e. source/drain contact is positioned at active with the grid at top
The most not homonymy of layer.Wherein active layer channel length L=10 μm, channel width W=180 μm.Example device uses glass
Glass substrate, on substrate, thickness is the Au/Ti source-drain electrode of the Au composition bilayer of Ti and 20nm of 5nm, source-drain electrode
Length is 5 μm, the inorganic semiconductor amorphous indium gallium zinc oxygen that the active layer above source-drain electrode uses thickness to be 30nm
(a-IGZO) in the a-IGZO thin film, magnetron sputtering method deposited, each chemical constituent ratio is In:Ga:Zn=1:0.9:0.6.
For the smooth interface obtained and between PDMS, dry etching is used to process the convex of a-IGZO thin film directly over source-drain electrode
Go out part, thus obtain smooth upper surface, the original depth t of PDMS organic elastomer gate insulation layer thin film0For 500nm,
Its preparation process is as follows: by polydimethylsiloxane (PDMS) performed polymer and the firming agent (crosslinking of the band silicon hydrogen-based of catalyst made from platonic
Agent) it is mixed and stirred for uniformly for 10:1 by volume, it is poured into the a-IGZO being obtained flat surfaces by etching after vacuum outgas
On active layer, i.e. obtaining PDMS elastomer gate insulation layer after its fully crosslinked solidification, its thickness is by the mixture poured into a mould
Volume determines.Tin indium oxide (ITO) the electrode conduct covering whole top device that last top device uses thickness to be 50nm
The gate electrode of device.
The fundamental diagram of pressure transducer described in this example such as Fig. 2, wherein VDFor 15V, VGS=10V, for making device work
Make in saturation region, RDValue be 33k Ω, the pressure acting perpendicularly to gate upper surface is 0N～1.008 × 10-3N, and with
7.2×10-5The interval of N is stepped up.
The drain electrode output electric current I of the a-IGZO TFT pressure transducer based on PDMS gate insulation layer that example obtainsDWith grid
Curve such as Fig. 3 of pressure change.Its test process is as follows: upper surface at top device gate electrode is uniformly applied is perpendicular to this
The applanation on surface, according to described this utility model example, the area of device grids upper surface is 180 μ m 20 μm, grid
Size P (MPa) of pole pressing force represents the pressure (N/mm that its every square millimeter of surface is suffered2).Gate upper surface is executed
The pressure added is from 0N～1.008 × 10-3N (0MPa～0.28MPa) is with 7.2 × 10-5The interval of N (0.02MPa) is stepped up,
The change of grid pressurized causes PDMS gate insulation layer thickness variation, shows as the drain electrode output electric current of device in this instance graph 2
Change, incrementally increase with gate stress, device saturated drain electrode output electric current from 9.27 × 10-5A increases to 1.45 × 10-4A,
The then drain electrode output electric current I of pressure transducer described in this exampleD(A) can with the variation relation of applanation P (MPa) added by grid
Being expressed as the curve shown in this instance graph 3, this slope of a curve can characterize the sensitivity of thin film transistor (TFT) pressure transducer.Definition
The sensitivity of pressure transducer is S=Δ ID/ΔP.Result according to Fig. 3 is visible, when device grids is stressed less, and PDMS
The deformation that gate insulation layer occurs is smaller, IDChange with P is the most linear, i.e. the sensitivity of sensor keeps substantially
Constant, the sensitivity extracting and obtaining under less pressure (< 0.1MPa) device from Fig. 3 is S=0.119mA/MPa, and works as
Gate stress increase to make PDMS film thickness reduce to close to original depth 50% time (P～0.28MPa), on sensitivity
It is raised to about S=0.351mA/MPa.
Claims (3)
1. thin film transistor (TFT) pressure transducer based on organic elastomer gate insulation layer, by directly detection drain electrode output electric currentI DSize variation obtain the size variation of grid pressure, it is characterised in that include top-gated staggered thin film transistor (TFT), organic elastomer gate insulation layer and inorganic semiconductor active layer；Described top-gated staggered structure is particularly as follows: source/drain electrode is deposited on substrate, deposit covers the inorganic semiconductor active layer of source/drain electrode again, the source/drain contact making device is positioned at the lower surface of inorganic semiconductor active layer, inorganic semiconductor active layer surface is flat surfaces, organic elastomer gate insulation layer is deposited in inorganic semiconductor active layer surface, finally deposit covers the top gate electrode thin layer in whole top device region, and makes top gate electrode thin layer have smooth surface；The gate electrode of described top-gated staggered thin film transistor (TFT) is positioned at the top of whole device, source/drain electrode contacts with the lower surface of inorganic semiconductor active layer, and top gate electrode controls inorganic semiconductor active layer upper surface formation conducting channel, i.e. source/drain contact and top gate electrode and is positioned at the most not homonymy of inorganic semiconductor active layer.
Thin film transistor (TFT) pressure transducer based on organic elastomer gate insulation layer the most according to claim 1, it is characterised in that: described organic elastomer gate insulation layer uses cured elastomer silicone.
Thin film transistor (TFT) pressure transducer based on organic elastomer gate insulation layer the most according to claim 1, it is characterised in that: the inorganic semiconductor active layer of described thin film transistor (TFT) is non-crystalline silicon, polysilicon or current existing metal-oxide semiconductor (MOS).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521077671.4U CN205620072U (en) | 2015-12-20 | 2015-12-20 | Thin film transistor pressure sensor based on organic elastomer gate insulation layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521077671.4U CN205620072U (en) | 2015-12-20 | 2015-12-20 | Thin film transistor pressure sensor based on organic elastomer gate insulation layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205620072U true CN205620072U (en) | 2016-10-05 |
Family
ID=57032520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521077671.4U Expired - Fee Related CN205620072U (en) | 2015-12-20 | 2015-12-20 | Thin film transistor pressure sensor based on organic elastomer gate insulation layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205620072U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105628262A (en) * | 2015-12-20 | 2016-06-01 | 华南理工大学 | Thin film transistor pressure sensor based on organic elastomer gate insulating layer |
| CN107843364A (en) * | 2017-11-02 | 2018-03-27 | 上海交通大学 | Pressure sensor, array of pressure sensors and preparation method thereof |
-
2015
- 2015-12-20 CN CN201521077671.4U patent/CN205620072U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105628262A (en) * | 2015-12-20 | 2016-06-01 | 华南理工大学 | Thin film transistor pressure sensor based on organic elastomer gate insulating layer |
| CN107843364A (en) * | 2017-11-02 | 2018-03-27 | 上海交通大学 | Pressure sensor, array of pressure sensors and preparation method thereof |
| CN107843364B (en) * | 2017-11-02 | 2020-06-23 | 上海交通大学 | Pressure sensor, pressure sensor array and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105628262A (en) | Thin film transistor pressure sensor based on organic elastomer gate insulating layer | |
| Hayashi et al. | 42.1: Invited paper: improved amorphous In‐Ga‐Zn‐O TFTs | |
| Merlo et al. | Field effect transport and trapping in regioregular polythiophene nanofibers | |
| CN107478977B (en) | Method for extracting trap state density of oxide semiconductor thin film transistor | |
| Hu et al. | Vertical organic-inorganic hybrid transparent oxide TFTs gated by biodegradable electric-double-layer biopolymer | |
| CN109682863A (en) | Gas sensor and preparation method thereof based on TMDCs-SFOI hetero-junctions | |
| CN101771076B (en) | Full transparent AlGaN/GaN high electron mobility transistor and manufacturing method thereof | |
| CN108807546A (en) | Oxide thin film transistor and its manufacturing method | |
| CN103268891A (en) | Thin film transistor, amorphous silicon flat detecting substrate and preparation method | |
| KR101694270B1 (en) | Substrate for high mobility electronic sensor and manufacturing method thereof | |
| CN205620072U (en) | Thin film transistor pressure sensor based on organic elastomer gate insulation layer | |
| Liu et al. | Dielectric interface passivation of polyelectrolyte-gated organic field-effect transistors for ultrasensitive low-voltage pressure sensors in wearable applications | |
| CN107464847A (en) | Crystal of molybdenum disulfide pipe and preparation method based on alkali metal soln doping | |
| CN106155421B (en) | A kind of touch panel, touch control display apparatus and touch control method | |
| Shimotani et al. | Electric double layer transistor of organic semiconductor crystals in a four-probe configuration | |
| CN104124277A (en) | Thin film transistor and production method thereof and array substrate | |
| Jiang et al. | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte | |
| Li et al. | Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator | |
| CN107565020B (en) | A kind of formaldehyde sensor and preparation method thereof based on organic field-effect tube | |
| CN101262042A (en) | Organic transistor, method for manufacturing the same, and electronic apparatus | |
| Lu et al. | Flexible low-voltage electric-double-layer TFTs self-assembled on paper substrates | |
| CN101964360A (en) | Ion sensitive field effect transistor and production method thereof | |
| CN207009479U (en) | Otft | |
| CN106992207A (en) | A kind of power semiconductor terminal structure and power semiconductor | |
| CN106847930A (en) | Thin film transistor (TFT), array base palte and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161005 Termination date: 20211220 |