CN205582962U - Quantum dot superradiance emitting diode - Google Patents
Quantum dot superradiance emitting diode Download PDFInfo
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- CN205582962U CN205582962U CN201620374082.0U CN201620374082U CN205582962U CN 205582962 U CN205582962 U CN 205582962U CN 201620374082 U CN201620374082 U CN 201620374082U CN 205582962 U CN205582962 U CN 205582962U
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Abstract
The utility model relates to a quantum dot superradiance emitting diode, include: epitaxial structure with bury heterostructure, one time the epitaxial structure includes: the N+ that the crystal orientation set gradually follows gaAs substrate layer (1), N gaAs buffer layer (2), N under alGaAs overburden (3), the alGaAs limiting layer (4), contain active area (5), the last limiting layer of alGaAs (6) and the P of multilayer inAs quantum dot alGaAs overburden (7), N is P arrived in alGaAs overburden (3) alGaAs overburden (7) form along the spine structure in crystal orientation, do it include the P who follows the crystal orientation and set gradually to bury heterostructure alGaAs buried layer (12), N gaAs buried layer (13) and P+ gaAs contact layer (14). The utility model provides a superradiance emitting diode chip has the advantage of high power, wide spectral output, low shake.
Description
Technical field
This utility model relates to a kind of light emitting diode, is specifically related to a kind of quantum dot super-radiance light emitting diode.
Background technology
Super-radiance light emitting diode (Super luminescent Diodes, SLD) is a kind of high-output power, wide spectral range
High stable light source, it has luminous spectrum more broader than semiconductor laser and lower coherence length；Compared with light emitting diode, tool
There is higher output, be widely used in the systems such as OCT (optical coherence tomography) imaging, optical fibre gyro, Fibre Optical Sensor
In.For being currently used for the SLD light source of OCT (optical coherence tomography) 800nm wavelength, owing to its spectrum width is narrower, with
Time its peak wavelength is shorter and that cause backscattering largely have impact on imaging resolution and the detectivity of OCT.Cause
This improves the peak wavelength of light source the most further, increase spectrum width is to improve present stage 800nm GaAs base SLD in OCT
One important method of light source.
Conventional uniform MQW, its gain spectral all relative narrower, it is difficult to obtain the output of wide spectrum；For non-homogeneous Multiple-quantum
For trap, output spectrum width can be improved to a certain extent, but owing to the electron energy state between different SQWs is discontinuous, it is difficult to obtain
There is the spectrum of regular gaussian shape.
For quantum spot semiconductor device, by the quantum dot of self-organizing growth, there is certain heterogeneity dimensionally, this
Planting heteropical quantum dot for making the device of wide spectrum is a favourable factor.Relevant result of study shows, tool
The quantum dot set having certain size to be distributed has wider gain spectral, and size heterogeneity is the biggest, peak-fall is the biggest, broadening more
By force.Meanwhile, the distribution of sizes general satisfaction Gauss distribution of quantum dot, the ground state of different size quantum dot overlaps on excited level
Together so that the energy level approximate continuous distribution of quantum dot set, it is more likely formed the output spectra of regular shape.For single quantum well or equal
Even MQW super-radiance light emitting diode, can only obtain the narrowest spectral width, for volume under relatively low injected current density
Sub-trap SLD, different in width SQW ground state transition energy is discontinuous thus can cause the in irregular shape of bands of a spectrum.Along with superradiance
The research of light emitting diode is deepened, and the application of super-radiance light emitting diode is more and more extensive, therewith to the performance requirement of device increasingly
High.SLD there is also some problems at present, needs the design of material to SLD and structure to be optimized, and improves device further defeated
Go out power, widen spectral width etc..
Utility model content
This utility model purpose is to provide a kind of quantum dot super-radiance light emitting diode for OCT, by quantum dot barrier layer
Material component and growth temperature, it is achieved wide spectrum export；On the other hand buried structure is used to realize low divergence and high carrier note
Entering efficiency, the SLD chip of making has wide spectrum, the output of low ripple.
A kind of quantum dot super-radiance light emitting diode that the utility model proposes, this quantum dot super-radiance light emitting diode includes: once
Epitaxial structure and buried heterostructure structure, wherein, a described epitaxial structure includes: the N set gradually along crystal orientation+-GaAs serves as a contrast
Bottom, N-GaAs cushion, N-AlGaAs cover layer, AlGaAs lower limit layer, active area containing Multilayer InAs Quantum Dots,
AlGaAs upper limiting layer and P-AlGaAs cover layer；Wherein said active area includes the first undoped p set gradually along crystal orientation
GaAs layer, Multilayer InAs Quantum Dots and the second undoped p GaAs layer；
N-AlGaAs cover layer, AlGaAs lower limit layer, active area containing Multilayer InAs Quantum Dots, AlGaAs upper limiting layer and
P-AlGaAs cover layer forms the ridge structure along crystal orientation；
P-AlGaAs buried layer that described buried heterostructure structure is included on N-GaAs cushion and sets gradually along crystal orientation,
N-GaAs buried layer and P+-GaAs contact layer, P-AlGaAs buried layer and N-GaAs buried layer as current barrier layer,
P-AlGaAs buried layer and N-GaAs buried layer are formed at the sidewall surfaces of ridge structure, P+-GaAs contact layer is formed at N-GaAs
On the upper surface of buried layer and P-AlGaAs cover layer.
Further, N-GaAs cushion is specially doping content 1 × 1018200nm N-GaAs cushion；
N-AlGaAs cover layer is specially doping content 1 × 1018100nm N-AlGaAs cover layer；
AlGaAs lower limit layer is specially 200nm AlGaAs lower limit layer；
AlGaAs upper limiting layer is specially 200nm AlGaAs upper limiting layer；
P-AlGaAs cover layer is specially doping content 1 × 1018100nm P-AlGaAs cover layer.
Further, described Multilayer InAs Quantum Dots is specially four layers of InAs quantum dot.
Further, every layer of InAs quantum dot includes InAs quantum dot, In0.05Ga0.95As cover layer and GaAs cover layer.
Further, undoped p GaAs layer is specially 100nm undoped p GaAs layer；
InAs quantum dot is specially the InAs quantum dot of 2ML；
In0.05Ga0.95As cover layer is specially 5nm In0.05Ga0.95As cover layer；
GaAs cover layer is specially the GaAs cover layer of 25nm.
Further, N-GaAs buried layer upper surface is concordant with P-AlGaAs cover layer upper surface.
Further, a width of 2um of the ridge of described ridge structure.
Further, described ridge structure is divided into straight wave guide region and tapered waveguide region, tapered waveguide region and straight ripple along cavity length direction
Leading region to be connected, tapered waveguide region is near light output end, and straight wave guide region is near backlight end face.
Further, straight wave guide region becomes 2～5 ° of angles with the end face normal direction of this diode；Tapered waveguide region subtended angle is 2～5 °.
Further, a length of 1000 μm of this diode cavity, straight wave guide region is along a length of 750 μm of cavity length direction, conical wave
Lead the region a length of 250 μm along cavity length direction.
The beneficial effects of the utility model: the super-radiance light emitting diode of the quantum-dot structure that the utility model proposes, its extension
Structure uses MBE to grow successively on N+-GaAs substrate layer: N-GaAs cushion, N-AlGaAs cover layer, AlGaAs
Lower limit layer, the active area containing four layers of InAs quantum dot, AlGaAs upper limiting layer, P-AlGaAs cover layer, P-GaAs protection
Layer, completes an epitaxial growth；Use when an extension active region growth and become component and high temperature quantum dot cap rock, it is achieved different chis
Very little, the growth of even density quantum dot, it is achieved thereby that wide gain spectrum epitaxial structure.Epitaxial wafer is corroded,
The method using MOCVD diauxic growth completes the buried heterostructure of chip, it is achieved laterally limiting of light field and carrier；With
The tapered transmission line that Shi Caiyong tilts, optimizes output spectrum further, is finally all deposited with at chip light-emitting end face and backlight end face high saturating
Film, to reduce the feedback of chamber surface model, reduces spectral ripple.The super-radiance light emitting diode chip that the utility model proposes has height
Power, wide spectrum output, the advantage of low jitter.
Accompanying drawing explanation
Fig. 1 is this utility model quantum dot super-radiance light emitting diode process chart.
Fig. 2 is an epitaxial slice structure schematic diagram of the super-radiance light emitting diode of quantum-dot structure of the present utility model.
Fig. 3 is the structural representation of light emitting diode with quantum dots chip of the present utility model.
Description of reference numerals: 1N+-GaAs substrate, 2N-GaAs cushion, 3N-AlGaAs cover layer, 4AlGaAs lower limit
Preparative layer, 5 active areas containing four layers of InAs quantum dot, 6AlGaAs upper limiting layer, 7P-AlGaAs cover layer, 8P-GaAs
Protective layer, 9InAs quantum dot, 10InGaAs cover layer, 11GaAs cover layer；12P-AlGaAs buried layer, 13N-GaAs
Buried layer, 14P+-GaAs contact layer, 15 tapered waveguide region, 16 straight wave guide regions, 17 light output ends, 18 backlight end faces.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to attached
Figure, further describes this utility model.But those skilled in the art know, this utility model be not limited to accompanying drawing and with
Lower embodiment.
This utility model relates to a kind of quantum dot super-radiance light emitting diode, and this utility model uses MBE successively at Grown
Cushion, cover layer, lower limit layer, complete an epitaxial growth containing quantum dot active region, upper limiting layer, cover layer, protective layer；
Use when an extension active region growth and become component and high temperature quantum dot cap rock, it is achieved different size, the life of even density quantum dot
Long.Epitaxial wafer is corroded, uses the method for MOCVD diauxic growth to complete the buried heterostructure of chip, it is achieved
Laterally limiting of light field and carrier；Use the tapered transmission line of inclination simultaneously, optimize output spectrum further.Finally go out at chip
Light end face and backlight end face are all deposited with high transmittance film, to reduce the feedback of chamber surface model, reduce spectral ripple.This quantum dot superradiance is sent out
Optical diode has high power, the wide advantage such as spectrum, low jitter.
Embodiment 1:
The manufacture method of a kind of quantum dot super-radiance light emitting diode that the utility model proposes, as it is shown in figure 1, the method include with
Lower step:
1. an epitaxial growth steps: as in figure 2 it is shown, use MBE grow an epitaxial structure, its structure along crystal orientation successively (as
Include N shown in Fig. 2 from top to bottom)+-GaAs substrate layer 1, N-GaAs cushion 2, N-AlGaAs cover layer 3, AlGaAs
Lower limit layer 4, the active area 5 containing four layers of InAs quantum dot, AlGaAs upper limiting layer 6, P-AlGaAs cover layer 7, P-GaAs
Protective layer 8.
Wherein active area 5 includes the first undoped p GaAs layer, four layers of InAs quantum dot and the second undoped p GaAs layer, every layer of InAs
Quantum dot includes InAs quantum dot 9, InGaAs cover layer 10 and GaAs cover layer 11.
During active region growth, In component bigger in InGaAs cover layer is conducive to the stress in release InAs quantum dot,
Reduce the lattice mismatch between InAs and GaAs cap rock so that the size of InAs quantum dot increases, peak luminous wavelength red shift.
On the other hand, bigger In component is conducive to suppression In to separate out to cap rock from InAs quantum dot so that In in InAs quantum dot
Component improves, and quantum dot band gap reduces, and peak luminous wavelength red shift is moved.The InGaAs cap rock of growth can cover most
Quantum dot, in further high growth temperature GaAs overlay process, high growth temperature can melt excessive quantum dot so that growth table
Face is smooth, and this makes, and the quantum dot stress of subsequent growth is low, density is big.Therefore use change of component InGaAs/ high temperature GaAs double
Cap rock can realize quantum dot density spectrum uniform, wide and peak luminous wavelength red shift.
2. form the step of ridge shape: as it is shown on figure 3, remove P-GaAs protective layer 8, deposition medium film, photoetching, etching are situated between
Plasma membrane, corrosion form ridge structure；
3. grow the step of buried heterostructure: as it is shown on figure 3, use MOCVD epitaxy growth that the slice, thin piece forming ridge structure is carried out
Bury growth, form buried heterostructure structure；
4. evaporation N, the step of P-type electrode: slice, thin piece is carried out deposit passivation layer, photoetching, Etch Passivation, deposition P face metal,
Thinning, deposition N face metal, alloy, form chip；
5. plating steps: slice, thin piece is dissociated into bar bar along crystal orientation, bar bar is gone out light, backlight end face carry out be deposited with blooming.
Embodiment 2:
The present embodiment is the preferred embodiment on the basis of embodiment 1.Quantum dot superradiation light-emitting two pole that the utility model proposes
The manufacture method of pipe is as it is shown in figure 1, the method includes:
1. an epitaxial growth steps: as in figure 2 it is shown, at N+On-GaAs substrate 1, at 500 DEG C, MBE grows doping content 1
×1018200nm N-GaAs cushion 2, doping content 1 × 1018100nm N-AlGaAs cover layer 3,200nm AlGaAs
Lower limit layer 4, active area 5 containing four layers of InAs quantum dot, then grow at 500 DEG C 200nm AlGaAs upper limiting layer 6,
Doping content 1 × 1018100nm P-AlGaAs cover layer 7, doping content 1 × 101810nm P-GaAs protective layer 8, completes
The growth of extension, its structure is as shown in Figure 2.
Wherein active area 5 growing method is as follows: grows 100nm undoped p GaAs layer at 500 DEG C, grows 2ML (ML: former
Sublayer) InAs quantum dot 9, grow 5nm In0.05Ga0.95As cover layer 10, improves growth temperature to 600 DEG C, annealing
30s, then grows the GaAs cover layer 11 of 25nm, thus grows ground floor InAs quantum dot on undoped p GaAs layer；
Cool the temperature to 500 DEG C, the GaAs cover layer 11 grown before grows 2ML InAs quantum dot, grows 5nm
In0.08Ga0.92As cover layer, is increased to 600 DEG C by growth temperature, and anneal 30s, growth 25nm GaAs cover layer, thus
Second layer InAs quantum dot is grown on ground floor InAs quantum dot；Again repeat above-mentioned InAs Quantum Dots Growth step, until
Second layer InAs quantum dot grows third layer InAs quantum dot and on third layer InAs quantum dot, grows the 4th layer
InAs quantum dot；At 500 DEG C, on the 4th layer of InAs quantum dot, grow 100nm undoped p GaAs layer again, complete active area
Growth.
2. form the step of ridge shape: as it is shown on figure 3, remove P-GaAs protective layer, the SiO of deposition 250nm2Dielectric layer, light
Carve and form ridge pattern, RIE etching point exposure area dielectric layer, use H2O:H2O2:H2SO4(8:8:1) corrosive liquid, at room temperature
Corrode to N-GaAs cushion 2, form ridge structure, corrosion depth 1.2 μm.As it is shown on figure 3, a length of 1000 μm in chip chamber,
The a width of 2um of ridge.Ridge structure includes straight wave guide region 16 and tapered waveguide region 15, and tapered waveguide region 15 is near light output end
17, straight wave guide region 16 is near backlight end face 18, and wherein straight wave guide region 16 is along cavity length direction length 750 μm, with die terminals
Face normal direction becomes 2～5 ° of angles, preferably 3 °；Tapered waveguide region 15 is connected with straight wave guide region 16, tapered waveguide region 15
Subtended angle is 2～5 °, preferably 3 °.
3. grow the step of buried heterostructure: as it is shown on figure 3, put in MOCVD device by the sample forming ridge structure,
Logical AsH at 630 DEG C3Within 15 minutes, remove ridge sidewall surfaces oxide layer, successively growth 600nm P-AlGaAs buried layer 12 and 900nm
N-GaAs buried layer 13 is as current barrier layer；Remove the SiO on ridge2Dielectric layer, then grow 200nm P with MOCVD+-GaAs
Contact layer 14, completes to bury growth.
4. evaporation N, the step of P-type electrode: deposit 300nm SiO at sample surfaces2Passivation layer, by photoetching, RIE etches exposure
Light region passivation layer, sample, as P face metal, is thinned to thickness by electron beam evaporation Au (20nm)/Zn (50nm)/Au (1000nm)
Spending 110 μm, electron beam evaporation AuGe (500nm)/Ni (800nm)/Au (1000nm) is as N face metal, and 420 DEG C at nitrogen gas
Alloy 60s under atmosphere.
5. plating steps: the bar bar of coelosis length 1000 of being dissociated by sample μm, uses electron beam evaporation at the light output end of chip and the back of the body
Monolayer SiO it is deposited with on light end face2High transmittance film, completes the making of chip.
Embodiment 3:
The quantum dot super-radiance light emitting diode that the utility model proposes as shown in Figures 2 and 3, this quantum dot superradiation light-emitting two pole
Pipe includes: an epitaxial structure and buried heterostructure structure, and wherein, a described epitaxial structure includes: set gradually along crystal orientation
N+-GaAs substrate layer 1, N-GaAs cushion 2, N-AlGaAs cover layer 3, AlGaAs lower limit layer 4, containing four layers of InAs
The active area 5 of quantum dot, AlGaAs upper limiting layer 6 and P-AlGaAs cover layer 7；Wherein active area 5 includes along crystal orientation successively
The first undoped p GaAs layer, four layers of InAs quantum dot and the second undoped p GaAs layer arranged.
N-AlGaAs cover layer 3, AlGaAs lower limit layer 4, the active area 5 containing four layers of InAs quantum dot, the AlGaAs upper limit
Preparative layer 6 and P-AlGaAs cover layer 7 forms the ridge structure along crystal orientation, and ridge structure is divided into straight wave guide region 16 He along cavity length direction
Tapered waveguide region 15, tapered waveguide region 15 is connected with straight wave guide region 16, tapered waveguide region 15 near light output end 17,
Straight wave guide region 16 is near backlight end face 18.Preferably, the light output end of chip and backlight end face are deposited with monolayer SiO2High transmittance film.
Wherein straight wave guide region 16 is along cavity length direction length 750 μm, becomes 2～5 ° of angles, preferably 3 ° folders with chip end face normal direction
Angle；Tapered waveguide region 15 subtended angle is 2～5 °, preferably 3 °, and tapered waveguide region 15 is along cavity length direction length 250 μm.
P-AlGaAs buried layer 12 that described buried heterostructure structure is included on N-GaAs cushion 2 and sets gradually along crystal orientation,
N-GaAs buried layer 13 and P+-GaAs contact layer 14, P-AlGaAs buried layer 12 and N-GaAs buried layer 13 is as electric current
Barrier layer, P-AlGaAs buried layer 12 and N-GaAs buried layer 13 is formed at the sidewall (sidewall as shown in Figure 3) of ridge structure
Surface, N-GaAs buried layer 13 is concordant with P-AlGaAs cover layer 7 upper surface (upper surface as shown in Figure 3), P+-GaAs
Contact layer 14 is formed on N-GaAs buried layer 13 and P-AlGaAs cover layer 7 upper surface.
Wherein, SiO is deposited at sample surfaces2Passivation layer, by photoetching, RIE etching exposure area passivation layer, electron beam evaporation
Au (20nm)/Zn (50nm)/Au (1000nm) is as P face metal, electron beam evaporation
AuGe (500nm)/Ni (800nm)/Au (1000nm) is as N face metal.
Preferably, the quantum dot super-radiance light emitting diode of the present embodiment can use the arbitrary manufacture method in embodiment 1 to 2 to make.
Above, embodiment of the present utility model is illustrated.But, this utility model is not limited to above-mentioned embodiment.
All within spirit of the present utility model and principle, any modification, equivalent substitution and improvement etc. done, should be included in this practicality
Within novel protection domain.
Claims (10)
1. a quantum dot super-radiance light emitting diode, it is characterised in that this quantum dot super-radiance light emitting diode includes: once
Epitaxial structure and buried heterostructure structure, wherein, a described epitaxial structure includes: the N set gradually along crystal orientation+-GaAs serves as a contrast
Bottom (1), N-GaAs cushion (2), N-AlGaAs cover layer (3), AlGaAs lower limit layer (4), containing multilamellar InAs
The active area (5) of quantum dot, AlGaAs upper limiting layer (6) and P-AlGaAs cover layer (7)；Wherein said active area (5)
Including the first undoped p GaAs layer set gradually along crystal orientation, Multilayer InAs Quantum Dots and the second undoped p GaAs layer；
N-AlGaAs cover layer (3), AlGaAs lower limit layer (4), the active area (5) containing Multilayer InAs Quantum Dots, AlGaAs
Upper limiting layer (6) and P-AlGaAs cover layer (7) form the ridge structure along crystal orientation；
Described buried heterostructure structure is included in N-GaAs cushion (2) P-AlGaAs that is upper and that set gradually along crystal orientation and buries
Layer (12), N-GaAs buried layer (13) and P+-GaAs contact layer (14), P-AlGaAs buried layer (12) and N-GaAs
Buried layer (13) is formed at ridge knot as current barrier layer, P-AlGaAs buried layer (12) and N-GaAs buried layer (13)
The sidewall surfaces of structure, P+-GaAs contact layer (14) is formed at N-GaAs buried layer (13) and P-AlGaAs cover layer (7)
Upper surface on.
Quantum dot super-radiance light emitting diode the most according to claim 1, it is characterised in that N-GaAs cushion (2)
It is specially doping content 1 × 1018200nm N-GaAs cushion；
N-AlGaAs cover layer (3) is specially doping content 1 × 1018100nm N-AlGaAs cover layer；
AlGaAs lower limit layer (4) is specially 200nm AlGaAs lower limit layer；
AlGaAs upper limiting layer (6) is specially 200nm AlGaAs upper limiting layer；
P-AlGaAs cover layer (7) is specially doping content 1 × 1018100nm P-AlGaAs cover layer.
Quantum dot super-radiance light emitting diode the most according to claim 1, it is characterised in that described Multilayer InAs Quantum Dots
It is specially four layers of InAs quantum dot.
4. according to the quantum dot super-radiance light emitting diode described in claim 1 or 3, it is characterised in that every layer of InAs quantum dot
Including InAs quantum dot (9), In0.05Ga0.95As cover layer (10) and GaAs cover layer (11).
Quantum dot super-radiance light emitting diode the most according to claim 4, it is characterised in that undoped p GaAs layer is specially
100nm undoped p GaAs layer；
InAs quantum dot (9) is specially the InAs quantum dot of 2ML；
In0.05Ga0.95As cover layer (10) is specially 5nm In0.05Ga0.95As cover layer；
GaAs cover layer (11) is specially the GaAs cover layer of 25nm.
Quantum dot super-radiance light emitting diode the most according to claim 1, it is characterised in that N-GaAs buried layer (13)
Upper surface is concordant with P-AlGaAs cover layer (7) upper surface.
Quantum dot super-radiance light emitting diode the most according to claim 1, it is characterised in that the ridge of described ridge structure is a width of
2um。
8. according to the quantum dot super-radiance light emitting diode described in claim 1 or 7, it is characterised in that described ridge structure is along chamber
Length direction is divided into straight wave guide region (16) and tapered waveguide region (15), tapered waveguide region (15) and straight wave guide region (16)
Being connected, tapered waveguide region (15), near light output end (17), straight wave guide region (16) are near backlight end face (18).
Quantum dot super-radiance light emitting diode the most according to claim 8, it is characterised in that straight wave guide region (16) with
The end face normal direction of this diode becomes 2～5 ° of angles；Tapered waveguide region (15) subtended angle is 2～5 °.
Quantum dot super-radiance light emitting diode the most according to claim 8, it is characterised in that this diode cavity a length of 1000
μm, straight wave guide region (16), along a length of 750 μm of cavity length direction, tapered waveguide region (15) are along the length of cavity length direction
Degree is 250 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870267A (en) * | 2016-04-28 | 2016-08-17 | 中国科学院福建物质结构研究所 | Quantum dot super luminescent diode and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870267A (en) * | 2016-04-28 | 2016-08-17 | 中国科学院福建物质结构研究所 | Quantum dot super luminescent diode and manufacturing method thereof |
| CN105870267B (en) * | 2016-04-28 | 2018-02-16 | 中国科学院福建物质结构研究所 | A kind of quantum dot super-radiance light emitting diode and preparation method thereof |
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