CN205564791U - CIGS base thin -film solar cell - Google Patents
CIGS base thin -film solar cell Download PDFInfo
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- CN205564791U CN205564791U CN201620109991.1U CN201620109991U CN205564791U CN 205564791 U CN205564791 U CN 205564791U CN 201620109991 U CN201620109991 U CN 201620109991U CN 205564791 U CN205564791 U CN 205564791U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model provides a CIGS base thin -film solar cell, it includes: substrate, back electrode layer, metal nitride layer, light absorbing zone, buffer layer, transparent conducting film. The utility model discloses a but set up a metal nitride layer effective control selenylation thermal treatment to the influence on back electrode layer between back electrode layer and light absorbing zone, can get into the light absorbing zone with the light reflex simultaneously, consequently the utility model discloses increase thin -film solar cell's short -circuit current just can reduce thin -film solar cell's series resistance, improves the performance of hull cell.
Description
Technical field
The utility model relates to technical field of thin-film solar, particularly relates to a kind of CIGS based thin film solar cell with yellow copper structure.
Background technology
Along with the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, increasing country starts to greatly develop solar utilization technique.Solar energy power generating is the clean energy resource of zero-emission, has safe and reliable, noiselessness, the advantage such as pollution-free, resource is inexhaustible, the construction period is short, length in service life, thus receives much concern.CIGS is the P-type semiconductor material of a kind of direct band gap, and its absorption coefficient is up to 105The sunshine of the CIGS thin-film the most absorbable more than 90% that/cm, 2um are thick.The band gap of CIGS thin film from 1.04eV to 1.67eV in the range of continuously adjustabe, can realize mating with the optimal of solar spectrum.CIGS thin-film solar cell has the advantages such as low cost, stable performance, capability of resistance to radiation is strong, the low light level also can generate electricity as the hull cell of a new generation, its conversion efficiency is the highest in thin-film solar cells, and the conversion ratio in current laboratory is more than 22%.
The structure of traditional CIGS based thin film solar cell is followed successively by: substrate, Mo dorsum electrode layer, CIGS light absorbing zone, CdS cushion, intrinsic zno layer, AZO electrically conducting transparent Window layer.When carrying out selenizing and being heat-treated, can form layer of metal selenide layers between dorsum electrode layer and light absorbing zone, this can make not to be again reflected back through the light of light absorbing zone in absorbed layer, therefore reduces the performance of thin-film solar cells；The metal selenide layer simultaneously produced can affect the series resistance of thin-film solar cells, thus also have impact on the performance of thin-film solar cells.
Utility model content
The technical problems to be solved in the utility model, is to provide a kind of CIGS based thin film solar cell, and this thin-film solar cells can the light of reflectance-transmittance light absorbing zone turn again in light absorbing zone, increases the short circuit current of thin-film solar cells；The thickness of metal selenide layer can be controlled again and then improve the series resistance of thin-film solar cells simultaneously, thus improving the conversion efficiency of battery.
For achieving the above object, the utility model is by the following technical solutions: a kind of CIGS based thin film solar cell, including substrate, cover the dorsum electrode layer of substrate surface, cover the metal nitride film layers of dorsum electrode layer, cover the light absorbing zone with yellow copper structure of metal nitride film layers, cover the cushion of light absorbing zone, cover the transparency conducting layer of cushion.
Further, described metal nitride film layers is made up of at least one of which metal nitride elementary layer；Described metal nitride unit membrane layer is the one in zirconium nitride film layer, titanium nitride film, molybdenum nitride film layer, niobium nitride film layer, chromium nitride film layer.
Further, the one during described substrate is glass, polyimides, aluminium sheet, titanium sheet metal or thin corrosion resistant plate.
Further, at least one during described dorsum electrode layer is molybdenum layer, titanium layer, layers of chrome, layers of copper, AZO film layer, ito film layer, GZO film layer, graphene film layer；Described dorsum electrode layer is preferably molybdenum；Containing aerobic in described dorsum electrode layer, in described dorsum electrode layer or containing alkali element.
Further, at least one during described light absorbing zone is CIGS, Cu-In-Ga-Se-S, copper indium gallium sulphur, CIS, copper and indium sulphur, Cu-In-Al-Se, copper and indium aluminium sulphur, Cu-In-Al-Se sulphur, copper-zinc-tin-sulfur, copper zinc tin sulfur selenium；Containing alkali element in described light absorbing zone, described light absorbing zone preferably comprises sodium.
Further, the one during described cushion is cadmium sulfide, zinc sulphide, zinc selenide, indium sulfide, indium selenide, zinc oxide or zinc-magnesium oxide.
Further, described transparency conducting layer selects that indium oxide mixes tin, doped zinc oxide aluminium, doped zinc oxide gallium, zinc oxide boron-doping, zinc oxide is indium-doped, tin oxide fluorine doped, tin oxide mix antimony, tin oxide mixes iodine, at least one in Graphene, cadmium stannate, money base nesa coating.
Further, the antireflection film layer of deposition it is additionally included on transparency conducting layer.
Further, described antireflection film layer is one layer of magnesium fluoride film layer or membranous layer of silicon oxide.
Further, described antireflection film layer has two-layer, is more than the first material layer of 1.80, and the second material layer that the refractive index covering this first material layer is less than 1.70 including refractive index.
Further, the barrier layer of the one layer of stop substrate Elements Diffusion inserted it is additionally included between substrate and dorsum electrode layer.
Further, a kind of in silica, silicon nitride, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitrides, nitrogen zirconium oxide, zirconium oxide, zirconium nitride, aluminium nitride, aluminum oxide, oxidation sial, aluminium silicon nitride, silicon oxynitride aluminium, the zinc tin oxide of described barrier material or their mixture.
Further, described barrier material is consisted of by least one element in silicon, zirconium and titanium and molybdenum and comprises the oxide of at least two element, nitride or nitrogen oxides.
Further, when substrate is glass substrate, described barrier layer is substituted containing the alkali filter course of at least one element in Li, K by one, and this alkali filter course comprises at least one element in Li, K and tri-kinds of elements of Si, Al, O.
Further, it is additionally included between cushion and transparency conducting layer the one layer of high resistivity film layer inserted, described high resistivity film layer is at least one in zinc oxide film, doping zinc-oxide film layer, and described doping zinc-oxide film layer is Zinc oxide doped at least one element having in boron, aluminium, gallium or indium；The resistivity of described zinc oxide film is not less than 0.08 Ω cm；Described doping zinc-oxide film layer, its resistivity is not less than 0.08 Ω cm, the most no more than 95 Ω cm.
The utility model can increase the short circuit current of thin-film solar cells by inserting layer of metal nitride layer between dorsum electrode layer and the light absorbing zone of CIGS base film battery, reduces the series resistance of thin-film solar cells, thus improves the conversion efficiency of battery.
Accompanying drawing explanation
The utility model is further described the most in conjunction with the embodiments.
Fig. 1 is the structural representation of CIGS based thin film solar cell of the present utility model；
Fig. 2 is another structural representation of CIGS based thin film solar cell of the present utility model.
In figure, 1-substrate 2-barrier layer 3-dorsum electrode layer 4-metal nitride film layers 5-light absorbing zone 6-cushion 7-intrinsic zinc oxide film layer 8-transparency conducting layer 9-antireflection film layer.
Detailed description of the invention
Below in conjunction with specific embodiment, the utility model is described in detail.
Embodiment 1
As it is shown in figure 1, use the metal molybdenum electrode layer of magnetron sputtering deposition 500nm on soda-lime glass substrate；Then the zirconium nitride film layer of sputtering sedimentation 50nm on molybdenum electrode layer；Then on zirconium nitride film layer, form the thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 1.8um；Light absorbing zone uses the CdS cushion of chemical bath (CBD) method deposition 50nm；Use the intrinsic zinc oxide film layer of sputtering sedimentation 50nm on the buffer layer；Then use magnetron sputtering deposition 600nmAZO film layer as transparency conducting layer.
The present embodiment is as most preferred embodiment of the present utility model.
Embodiment 2
As in figure 2 it is shown, on soda-lime glass substrate the silicon nitride film layer of sputtering sedimentation 50nm；Then on silicon nitride film layer, use the metal molybdenum electrode layer of magnetron sputtering deposition 500nm；Then the titanium nitride film of sputtering sedimentation 50nm on molybdenum electrode layer；Then on titanium nitride film, form the thick copper indium callium diselenide (CIGS) sulphur light absorbing zone with yellow copper structure of 1.9um；Light absorbing zone uses the indium sulfide cushion of chemical bath (CBD) method deposition 50nm；Use the intrinsic zinc oxide film layer of sputtering sedimentation 60nm on the buffer layer；Then use magnetron sputtering deposition 600nmAZO film layer as transparency conducting layer；Deposition 100nm magnesium fluoride film layer is as antireflection film layer the most over transparent conductive layer.
Embodiment 3
As it is shown in figure 1, use the metal molybdenum electrode layer of magnetron sputtering deposition 500nm on soda-lime glass substrate；Then the molybdenum nitride film layer of sputtering sedimentation 20nm, then sputtering sedimentation 30nm zirconium nitride film layer on Molybdenum nitride layers on molybdenum electrode layer；Then on zirconium nitride film layer, form the thick copper and indium gallium two sulphur light absorbing zone with yellow copper structure of 1.8um；Light absorbing zone uses the CdS cushion of chemical bath (CBD) method deposition 50nm；Use the zinc oxide film of the adulterated al that resistivity is 10 Ω cm of sputtering sedimentation 60nm on the buffer layer；Then use magnetron sputtering deposition 700nmAZO film layer as transparency conducting layer.
Embodiment 4
As it is shown in figure 1, on Thin Stainless Steel substrate the silicon oxynitride film of sputtering sedimentation 80nm；Then on silicon oxynitride film, use the metal molybdenum electrode layer of magnetron sputtering deposition 500nm；Then the zirconium nitride film layer of sputtering sedimentation 20nm on molybdenum electrode layer, then the molybdenum nitride film layer of sputtering sedimentation 20nm, then sputtering sedimentation 20nm zirconium nitride film layer on Molybdenum nitride layers on zirconium nitride film layer；Then on zirconium nitride film layer, form the thick copper and indium gallium aluminium two selenium absorbed layer with yellow copper structure of 1.8um；Light absorbing zone uses the CdS cushion of chemical bath (CBD) method deposition 40nm；Use the zinc oxide film of the adulterated al that resistivity is 12 Ω cm of sputtering sedimentation 80nm on the buffer layer；Then use magnetron sputtering deposition 900nmAZO film layer as transparency conducting layer.
Embodiment 5
As it is shown in figure 1, use the metal molybdenum electrode layer of magnetron sputtering deposition 600nm on soda-lime glass substrate；Then the niobium nitride film layer of sputtering sedimentation 60nm on molybdenum electrode layer；Then on niobium nitride film layer, form the thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.1um；Light absorbing zone uses the ZnS cushion of chemical bath (CBD) method deposition 40nm；Use the intrinsic zinc oxide film layer of sputtering sedimentation 60nm on the buffer layer；Then use magnetron sputtering deposition 800nmAZO film layer as transparency conducting layer.
Embodiment 6
As it is shown in figure 1, use the metal molybdenum electrode layer of magnetron sputtering deposition 550nm on soda-lime glass substrate；Then the chromium nitride film layer of sputtering sedimentation 50nm on molybdenum electrode layer；Then on chromium nitride film layer, form the thick copper indium callium diselenide (CIGS) light absorbing zone with yellow copper structure of 2.0um；Light absorbing zone uses the ZnS cushion of chemical bath (CBD) method deposition 350nm；Use the intrinsic zinc oxide film layer of sputtering sedimentation 60nm on the buffer layer；Then use magnetron sputtering deposition 800nmAZO film layer as transparency conducting layer.
Above in conjunction with accompanying drawing, the utility model is exemplarily described; obviously the utility model implements and is not subject to the restrictions described above; as long as have employed the improvement of the various unsubstantialities that method of the present utility model design is carried out with technical scheme; or the most improved design of the present utility model and technical scheme are directly applied to other occasion, all within protection domain of the present utility model.
Claims (7)
1. a CIGS based thin film solar cell, it is characterized in that, including substrate, cover the dorsum electrode layer of substrate surface, cover the metal nitride film layers of dorsum electrode layer, cover the light absorbing zone with yellow copper structure of metal nitride film layers, cover the cushion of light absorbing zone, cover the transparency conducting layer of cushion.
CIGS based thin film solar cell the most according to claim 1, it is characterised in that: described metal nitride film layers is made up of at least one of which metal nitride elementary layer；Described metal nitride elementary layer is the one in zirconium nitride film layer, titanium nitride film, molybdenum nitride film layer, niobium nitride film layer, chromium nitride film layer.
CIGS based thin film solar cell the most according to claim 1, it is characterised in that described substrate is the one in glass, polyimides, aluminium sheet, titanium sheet metal or thin corrosion resistant plate.
CIGS based thin film solar cell the most according to claim 1, it is characterised in that described dorsum electrode layer is at least one in molybdenum layer, titanium layer, layers of chrome, layers of copper, AZO film layer, ito film layer, GZO film layer, graphene film layer.
CIGS based thin film solar cell the most according to claim 1, it is characterised in that be additionally included on transparency conducting layer the antireflection film layer of deposition.
CIGS based thin film solar cell the most according to claim 1, it is characterised in that be additionally included between substrate and dorsum electrode layer the barrier layer of the one layer of stop substrate Elements Diffusion inserted.
CIGS based thin film solar cell the most according to claim 1, it is characterized in that, be additionally included between cushion and transparency conducting layer the film layer that a layer inserted has a high resistivity, described in have the film layer of high resistivity be at least one in zinc oxide film, doping zinc-oxide film layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246906A (en) * | 2019-06-12 | 2019-09-17 | 西安电子科技大学 | A kind of multiple layer thin film solar cells and its film thickness design method |
| CN110970524A (en) * | 2018-09-30 | 2020-04-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
| CN111092135A (en) * | 2018-10-22 | 2020-05-01 | 北京铂阳顶荣光伏科技有限公司 | Preparation method of thin-film solar cell prefabricated plate |
| CN112216750A (en) * | 2020-09-22 | 2021-01-12 | 中国电子科技集团公司第十八研究所 | Flexible thin film solar cell back electrode and preparation method thereof |
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2016
- 2016-02-03 CN CN201620109991.1U patent/CN205564791U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970524A (en) * | 2018-09-30 | 2020-04-07 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
| CN111092135A (en) * | 2018-10-22 | 2020-05-01 | 北京铂阳顶荣光伏科技有限公司 | Preparation method of thin-film solar cell prefabricated plate |
| CN111092135B (en) * | 2018-10-22 | 2023-01-20 | 鸿翌科技有限公司 | Preparation method of thin-film solar cell prefabricated plate |
| CN110246906A (en) * | 2019-06-12 | 2019-09-17 | 西安电子科技大学 | A kind of multiple layer thin film solar cells and its film thickness design method |
| CN112216750A (en) * | 2020-09-22 | 2021-01-12 | 中国电子科技集团公司第十八研究所 | Flexible thin film solar cell back electrode and preparation method thereof |
| CN112216750B (en) * | 2020-09-22 | 2023-07-18 | 中国电子科技集团公司第十八研究所 | Flexible thin film solar cell back electrode and preparation method thereof |
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