CN205556772U - Chemical vapor deposition is graphite deposition apparatus for stove - Google Patents
Chemical vapor deposition is graphite deposition apparatus for stove Download PDFInfo
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- CN205556772U CN205556772U CN201521144717.XU CN201521144717U CN205556772U CN 205556772 U CN205556772 U CN 205556772U CN 201521144717 U CN201521144717 U CN 201521144717U CN 205556772 U CN205556772 U CN 205556772U
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Abstract
The utility model provides a chemical vapor deposition is graphite deposition apparatus for stove, hold the device including solid starting material, arrange in solid starting material holds the apron at device top, be provided with the air current hole on the apron, the deposit mechanism that has the at least deposition chamber that vertically sets up more than two, the deposit establishment of institution in the apron top, the apron is as the bottom plate of deposit mechanism, be provided with the baffle between the deposition chamber, be provided with the air current hole on the baffle, be located the dust chamber of deposition chamber top, the dust chamber bottom is linked together through the deposition chamber of gather dust passageway and the top. The utility model discloses increase the baffle at the deposition chamber, cut apart whole cavity, make the thickness of the sedimentary product in different cavities the inside more even, present gradient nature, improved the transformation rate of product, improved subsequent machining efficiency greatly, reduce the processing degree of difficulty, improve the whole utilization ratio of product, effectively solved and have the problem that uneven thickness is even in the jumbo size deposition chamber deposition process.
Description
Technical field
The utility model relates to chemical vapour deposition technique field, particularly relates to a kind of chemical vapor deposition stove graphite deposits device.
Background technology
It must be high-purity that modern science and technology need to use the New Inorganic Materials of a large amount of Various Functions, these functional materials, or mixes the dopant material that certain impurity is formed in high-purity material wittingly.Chemical gaseous phase deposition is the new technology of the preparation inorganic material that recent decades grows up.Chemical vapour deposition technique is widely used for purifying substances, develops new crystal, deposits various monocrystalline, polycrystalline or glassy state inorganic thin film material.
Chemical vapour deposition technique is a kind of method of vapor-phase growing preparing material, it is one or more to be contained constitute the compound of film element, elementary gas and be passed through the reative cell being placed with base material, by space gas-phase chemical reaction technology of depositing solid films on matrix surface.These materials can be oxide, sulfide, nitride, carbide or selenides, can also be the binary in III-V, II-IV, group IV-VI or compound between polynary element, and their physical function accurately can be controlled by the deposition process of gas phase doping.At present, chemical gaseous phase deposition has become a frontier of Inorganic synthese chemistry.
Chemical deposition has plurality of advantages, it is possible under middle temperature or high temperature, is formed solid matter be deposited on matrix by the gas-phase chemical reaction between the precursor compound of gaseous state；Can be under normal pressure or vacuum condition；Use plasma and laser assist techniques can be obviously promoted chemical reaction, make deposition to carry out at a lower temperature；And the chemical composition of coating can change with the change of gas phase composition, thus obtain gradient deposition thing or obtain mixing coating, moreover it is possible to controls density and the coating purity of coating；Particularly can plated film on the matrix of complicated shape and on granular materials, it is suitable for coating the workpiece of various complicated shapes, due to it around plating performance good, so can coat with trough, hole, the even workpiece of blind hole, by various technology, chemical reaction can also be carried out gas phase disturbance, to improve its structure etc..
For common chemical gas-phase deposition system, graphite material is widely applied on gas-phase deposition system the assembly as liner body or deposition fraction, this is because graphite deposits assembly is easier processing, heat conductivility is relatively good.General chemical gas-phase deposition system; the graphite deposits device that it uses is substantially all as single chamber; the most whole depositing system only arranges a settling chamber; the graphite deposits assembly of this single chamber should use more convenient for little body of heater; but for the body of heater being applied in large-scale industrial production; during chemical gaseous phase deposits; the defect that whole deposition indoor production product thickness is uneven would generally occur, and then the utilization rate reducing product adds the difficulty of processing of rear end.And use the graphite deposits device not only production cost of single chamber higher, and the inconvenience that operates, cause production efficiency low.
Therefore, a kind of chemical vapor deposition stove graphite deposits device how is obtained, it is possible to overcome in large-scale industrial production, the defect that the product thickness in settling chamber is uneven, the most in the industry one of common focus of attention of production firm and user institute.
Utility model content
In view of this, the technical problems to be solved in the utility model is to provide a kind of chemical vapor deposition stove graphite deposits device, the graphite deposits device that the utility model provides not only increases the uniformity of product thickness, also improves production efficiency simultaneously, reduces production cost.
The utility model provides a kind of chemical vapor deposition stove graphite deposits device, including,
Solid material apparatus for placing；
It is placed in the cover plate at described solid material apparatus for placing top；It is provided with airflow hole on described cover plate；
There is the deposition mechanism of at least two longitudinally disposed settling chamber；Described deposition mechanism is arranged at described cover plate top, and described cover plate is as the base plate of deposition mechanism；
It is provided with dividing plate between described settling chamber, described dividing plate is provided with airflow hole；
It is positioned at the dust chamber above settling chamber；It is connected with the settling chamber of the top by the passage that gathers dust bottom described dust chamber.
Preferably, the airflow hole on described cover plate is one or more；Airflow hole on described dividing plate is one or more.
Preferably, the airflow hole on described cover plate is crisscross arranged with the airflow hole on described adjacent dividing plate.
Preferably, the airflow hole in described any two adjacent separator is crisscross arranged.
Preferably, the cross-sectional area of passage is gathered dust described in less than the area bottom dust chamber.
Preferably, described solid material apparatus for placing is graphite crucible, and described cover plate is crucible cover.
Preferably, described dust chamber is arranged above leading dirt passage.
Preferably, the thickness difference of the blank product that described settling chamber is produced is 0.1～1mm.
The utility model provides a kind of chemical vapor deposition stove, including the graphite deposits device described in technique scheme any one.
The utility model additionally provides a kind of chemical gas-phase deposition system, including the chemical vapor deposition stove described in technique scheme, multistage dust collecting system and exhaust gas processing device.
The utility model provides a kind of chemical vapor deposition stove graphite deposits device, including, solid material apparatus for placing；It is placed in the cover plate at described solid material apparatus for placing top；It is provided with airflow hole on described cover plate；There is the deposition mechanism of at least two longitudinally disposed settling chamber；Described deposition mechanism is arranged at described cover plate top, and described cover plate is as the base plate of deposition mechanism；It is provided with dividing plate between described settling chamber, described dividing plate is provided with airflow hole；It is positioned at the dust chamber above settling chamber；It is connected with the settling chamber of the top by the passage that gathers dust bottom described dust chamber.Compared with prior art, the utility model increases dividing plate in settling chamber, i.e. gas distribution plate, splits whole chamber, makes the thickness of the product of deposition inside different chamber more uniform, present gradient, improve the conversion ratio of product, be greatly improved follow-up working (machining) efficiency, reduce difficulty of processing, improve the overall utilization rate of product, effectively solve in large scale deposition chambers deposition process and there is problem in uneven thickness.Meanwhile, in whole deposition process, greatly improve the conversion ratio of zinc selenide.Test result indicate that, use the graphite deposits device that the utility model provides, zinc selenide is produced by chemical vapor deposition stove, the blank product thickness of different chamber presents uniform gradient, the thickness difference of single chamber blank product is 0.1～1mm, and the conversion ratio of zinc selenide can reach more than 75%.
Accompanying drawing explanation
Chemical vapor deposition stove graphite deposits device that Fig. 1 provides for the utility model embodiment and the Structure and Process simplified schematic diagram of chemical gas-phase deposition system；
Chemical vapor deposition stove graphite deposits device that Fig. 2 provides for the utility model embodiment 2 and the Structure and Process simplified schematic diagram of chemical gas-phase deposition system；
The structural representation sketch of the chemical vapor deposition stove graphite deposits device that Fig. 3 provides for the utility model embodiment 3.
Detailed description of the invention
In order to be further appreciated by the utility model, below in conjunction with embodiment, the utility model preferred embodiment is described, it is understood that these describe the restriction being intended merely to further illustrate feature and advantage of the present utility model rather than require utility model right.
The all raw materials of the utility model, be not particularly limited its source, that commercially buy or prepare according to conventional method well known to those skilled in the art.
The utility model all devices or parts, be not particularly limited its model, with model well known to those skilled in the art.
The utility model provides a kind of chemical vapor deposition stove graphite deposits device, including,
Solid material apparatus for placing；
It is placed in the cover plate at described solid material apparatus for placing top；It is provided with airflow hole on described cover plate；
There is the deposition mechanism of at least two longitudinally disposed settling chamber；Described deposition mechanism is arranged at described cover plate top, and described cover plate is as the base plate of deposition mechanism；
It is provided with dividing plate between described settling chamber, described dividing plate is provided with airflow hole；
It is positioned at the dust chamber above settling chamber；It is connected with the settling chamber of the top by the passage that gathers dust bottom described dust chamber.
Described chemical vapor deposition stove is not particularly limited by the utility model, with chemical vapor deposition stove well known to those skilled in the art.
In the present embodiment, described solid material apparatus for placing is preferably graphite crucible, and after its role is to stable placement solid material and heating, solid material becomes during liquid evaporates then, keeping stably being not involved in reaction；In other embodiments, described solid material apparatus for placing can also be other equipment or other materials, can stably place solid material and to be not involved in reaction as preferred version.
In the present embodiment, it is placed in the cover plate at described solid material apparatus for placing top, its role is to the settling chamber supported above and the evaporative air controlling solid material；In other embodiments, being placed in described solid material apparatus for placing top can also be for other device, to support, stablize and to control the evaporative air of solid material as preferred version.
In the present embodiment, described cover plate is preferably crucible cover, and after its role is to support settling chamber above and heating, solid material becomes during liquid evaporates then, keeping stably being not involved in reaction；In other embodiments, described cover plate can also be other equipment or other materials, can stably support settling chamber and to be not involved in reaction as preferred version.
In the present embodiment, described cover plate is provided with airflow hole, its role is to control and derive the evaporative air of solid material；In other embodiments, described cover plate can also be provided with other devices, to control and to derive the evaporative air of solid material as preferred version.
In the present embodiment, the airflow hole on described cover plate is the most one or more, the most multiple, its role is to control and derive the evaporative air of solid material；In other embodiments, described airflow hole can be the most individual, to control and to derive the evaporative air of solid material as preferred version.
In the present embodiment, there is the deposition mechanism of at least two longitudinally disposed settling chamber, more preferably 2～5, most preferably 2～3, its role is to product and deposit uniformly；In other embodiments, described longitudinally disposed settling chamber can be arbitrarily, with improve product thickness uniformity as preferred version.
In the present embodiment, described deposition mechanism is arranged at described cover plate top, and the evaporative air of the solid material that its role is to derivation is directly entered deposition mechanism；In other embodiments, described deposition mechanism can also be arranged at other positions, to facilitate the derivation evaporative air of solid material and beneficially vapour deposition as preferred version.
In the present embodiment, described cover plate is as the base plate of deposition mechanism, and the evaporative air of solid material that its role is to beneficially derive is directly entered deposition mechanism；In other embodiments, the base plate of described deposition mechanism can also be other equipment, to facilitate the derivation evaporative air of solid material and beneficially vapour deposition as preferred version.
In the present embodiment, it is provided with dividing plate between described settling chamber, described dividing plate is provided with airflow hole, be i.e. gas distribution plate, its role is to improve the uniformity of product thickness in settling chamber, improve the conversion ratio of zinc selenide simultaneously；In other embodiments, can also be for arranging other equipment between described settling chamber, to improve in settling chamber the uniformity of product thickness and beneficially vapour deposition as preferred version.
In the present embodiment, the airflow hole on described dividing plate is the most one or more, the most multiple, its role is to beneficially import and derive evaporative air and the vapour deposition of solid material；In other embodiments, described airflow hole can be the most individual, is that beneficially vapour deposition is preferred version to be conducive to the evaporative air importing and deriving solid material.
In the present embodiment, airflow hole on described cover plate is crisscross arranged with the airflow hole on described adjacent dividing plate, cover plate is the bottom of bottom settling chamber, vertically upward first dividing plate is dividing plate adjacent thereto, both airflow holes are crisscross arranged, and its role is to evaporative air and the vapour deposition being more beneficial for importing solid material；In other embodiments, described airflow hole between the two can be arbitrarily to arrange, and is deposited as preferred version with the evaporative air and gas phase being conducive to importing solid material.
In the present embodiment, airflow hole in described any two adjacent separator is crisscross arranged, some divider upright upward direction first or first dividing plate of vertical downward direction are dividing plate adjacent thereto, both airflow holes are crisscross arranged, and its role is to evaporative air and the vapour deposition being more beneficial for importing solid material；In other embodiments, described airflow hole between the two can be arbitrarily to arrange, and is deposited as preferred version with the evaporative air and gas phase being conducive to importing solid material.
In the present embodiment, described in be positioned at settling chamber and be provided above dust chamber, its role is to derive unreacted raw metal steam in time settling chamber, improve the purity of deposited product；In other embodiments, described dust chamber can also be arranged on its position, unreacted raw metal steam is derived settling chamber in time as preferred version facilitating.
In the present embodiment, it is connected with the settling chamber of the top by the passage that gathers dust bottom described dust chamber, its role is to derive unreacted raw metal steam in time settling chamber, improve the purity of deposited product；In other embodiments, can also be connected with the settling chamber of the top by other devices bottom dust chamber, unreacted raw metal steam be derived settling chamber in time as preferred version facilitating.
In the present embodiment, described in the gather dust cross-sectional area of passage less than the area bottom dust chamber, its role is to the dust settling space enough to dust chamber, improve the purity of deposited product；In other embodiments, gathering dust described in, there is no particular restriction, to facilitate dust chamber dust settling as preferred version for the cross-sectional area of passage.
In the present embodiment, described dust chamber is arranged above leading dirt passage, its role is to derive unreacted raw metal steam in time cvd furnace, improves the purity of deposited product；In other embodiments, above described dust chamber, it is also provided with other devices, unreacted raw metal steam is derived cvd furnace in time as preferred version facilitating.
The thickness difference of the blank product that settling chamber described in the utility model is produced, preferably 0.1～1mm, more preferably 0.3～0.7mm, most preferably 0.4～0.6mm.
The utility model provides a kind of chemical vapor deposition stove, including the graphite deposits device described in technique scheme any one.
The utility model provides a kind of chemical vapor deposition stove, including the graphite deposits device described in technique scheme any one.Described chemical vapor deposition stove is not particularly limited by the utility model, with chemical vapor deposition stove well known to those skilled in the art.The utility model arranges position to described graphite deposits device and is not particularly limited, and arranges position with the graphite deposits device of chemical vapor deposition stove well known to those skilled in the art.
The utility model additionally provides a kind of chemical vapor deposition stove, including the chemical vapor deposition stove described in technique scheme, multistage dust collecting system and exhaust gas processing device.
Described multistage dust collecting system is not particularly limited by the utility model, with multistage dust collecting system well known to those skilled in the art, the utility model preferably heat exchanger and the bucket that gathers dust；The progression of described multistage dust collecting system is not particularly limited by the utility model, and those skilled in the art can be adjusted according to practical condition, dust situation, and the utility model is preferably 2～6 grades, more preferably 3～5 grades, most preferably 4 grades.The progression annexation of described multistage dust collecting system is not particularly limited by the utility model, and those skilled in the art can be combined according to practical condition, dust situation and adjust, and the utility model is preferably connection in series-parallel.Described exhaust gas processing device is not particularly limited by the utility model, with exhaust gas processing device well known to those skilled in the art.
The utility model, through described above, illustrates chemical vapor deposition stove graphite deposits device, chemical vapor deposition stove and chemical gas-phase deposition system that the utility model provides.The utility model increases dividing plate in settling chamber, i.e. gas distribution plate, whole chamber is split, make the thickness of the product of deposition inside different chamber more uniform, present gradient, improve the conversion ratio of product, it is greatly improved follow-up working (machining) efficiency, reduce difficulty of processing, improve the overall utilization rate of product, effectively solve in large scale deposition chambers deposition process and there is problem in uneven thickness.Meanwhile, in whole deposition process, greatly improve the conversion ratio of zinc selenide.Test result indicate that, use the graphite deposits device that the utility model provides, zinc selenide is produced by chemical vapor deposition stove, the blank product thickness of different chamber presents uniform gradient, the thickness difference of single chamber blank product is 0.1～1mm, and the conversion ratio of zinc selenide can reach more than 75%.
See chemical vapor deposition stove graphite deposits device and the Structure and Process simplified schematic diagram of chemical gas-phase deposition system that Fig. 1, Fig. 1 provide for the utility model embodiment, wherein, 1 is crucible, and 2 is crucible cover plate, and 3 is the first settling chamber, 4 is the second settling chamber, and 5 is dividing plate, and 6 is the 3rd settling chamber, 7 is dust chamber, and 8 for leading dirt passage, and 9 is chemical vapor deposition stove, 10 is multistage dust collecting system, and 11 is sack cleaner, and 12 is metering device, 13 is the cylinder that gathers dust, and 14 is exhaust gas processing device.
In order to further illustrate the utility model, a kind of chemical vapor deposition stove graphite deposits device provided the utility model below in conjunction with embodiment is described in detail, and protection domain of the present utility model is not limited by the following examples.
Embodiment 1
First in solid material apparatus for placing graphite crucible, put into solid material, cover the crucible cover at top, confirm that crucible cover top airflow apertures is in good condition.
Then intensification and the deposition procedure of chemical vapor deposition stove are set, in deposition process, solid material steam and gas raw material are under the carrying of inert gas, enter in the first settling chamber by pore, after the bottom cover plate deposition fraction of the first settling chamber, then enter into the second settling chamber by the airflow hole (being crisscross arranged with the airflow hole on cover plate) on dividing plate to deposit, after the bottom baffles deposition fraction of the second settling chamber, the 3rd settling chamber is entered into finally by the airflow hole (airflow hole on the bottom baffles of the second settling chamber and the bottom baffles of the 3rd settling chamber is crisscross arranged) on dividing plate, deposit in the 3rd settling chamber, it is deposited on the bottom baffles of the 3rd settling chamber.
After last unreacted gas and the zinc selenide dust entrance dust chamber not deposited deposit, through leading the multistage collection system of rear end dust after dirt passage entrance chemical deposition operation and exhaust treatment system.
Embodiment 2
Zinc raw material is loaded in graphite crucible, intensification and deposition procedure are set, in deposition process, hydrogen selenide and zinc fume are under the carrying of inert gas in entrance settling chamber, it is first in the first settling chamber, deposition fraction in the first settling chamber, then enters the second settling chamber by gas distribution plate and deposit, after the bottom baffles deposition fraction of the second settling chamber, enter into the 3rd settling chamber by the airflow hole on dividing plate again, deposit in the 3rd settling chamber, be deposited on the bottom baffles of the 3rd settling chamber.After last unreacted gas and the zinc selenide dust entrance dust chamber not deposited deposit, through leading the multistage collection system of rear end dust after dirt passage entrance chemical deposition operation and exhaust treatment system.
See Fig. 2, the structural representation sketch of the chemical vapor deposition stove graphite deposits device that Fig. 2 provides for the utility model embodiment 2, wherein, 1 is crucible, 2 is crucible cover plate, 3 is the first settling chamber, and 4 is the second settling chamber, and 5 is dividing plate, 6 is the 3rd settling chamber, 7 is dust chamber, and 8 for leading dirt passage, and 9 is chemical vapor deposition stove.
The thickness utilizing the product of zinc selenide prepared by the method presents uniform gradient, the thickness of the product that the first settling chamber obtains is thicker than the second settling chamber 5mm, the product that second settling chamber obtains obtains the thick 3mm of the thickness of product than the 3rd settling chamber, the uniformity of the product of the zinc selenide in single settling chamber is preferable, and average thickness difference is within 0.3mm.
Through detection, the conversion ratio of zinc selenide is 76%.
Embodiment 3
Zinc raw material is loaded in graphite crucible, intensification and deposition procedure are set, in deposition process, hydrogen sulfide and zinc fume are under the carrying of inert gas in entrance settling chamber, it is first in the first settling chamber, deposition fraction in the first settling chamber, then enter the second settling chamber by gas distribution plate to deposit, after last unreacted gas and the zinc sulphide dust entrance dust chamber not deposited deposit, through leading the multistage collection system of rear end dust after dirt passage entrance chemical deposition operation and exhaust treatment system.
Seeing the structural representation sketch of the chemical vapor deposition stove graphite deposits device that Fig. 3, Fig. 3 provide for the utility model embodiment 3, wherein, 1 is crucible, 2 is crucible cover plate, and 3 is the first settling chamber, and 4 is dividing plate, and 5 is the second settling chamber, 6 is dust chamber, and 7 for leading dirt passage, and 8 is chemical vapor deposition stove.
The thickness utilizing the product of zinc sulphide prepared by the method presents uniform gradient, the thickness of the product that the first settling chamber obtains is thicker than the second settling chamber 3mm, and the uniformity of the product of the zinc sulphide in single settling chamber is preferable, and average thickness difference is within 0.6mm.
Through detection, the conversion ratio of zinc sulphide is 78%.
Above the apparatus and method of a kind of raw material evaporation capacity measuring chemical vapor deposition stove provided by the utility model are described in detail.Principle of the present utility model and embodiment are set forth by individual example specifically used herein, and the explanation of above example is only intended to help to understand method of the present utility model and core concept thereof.Should be understood that; for those skilled in the art; on the premise of without departing from the utility model principle, it is also possible to the utility model is carried out some improvement and modification, these improve and modification also falls in the utility model scope of the claims.
Claims (10)
1. a chemical vapor deposition stove graphite deposits device, it is characterised in that include,
Solid material apparatus for placing；
It is placed in the cover plate at described solid material apparatus for placing top；It is provided with airflow hole on described cover plate；
There is the deposition mechanism of at least two longitudinally disposed settling chamber；Described deposition mechanism is arranged at described cover plate top, and described cover plate is as the base plate of deposition mechanism；
It is provided with dividing plate between described settling chamber, described dividing plate is provided with airflow hole；
It is positioned at the dust chamber above settling chamber；It is connected with the settling chamber of the top by the passage that gathers dust bottom described dust chamber.
Graphite deposits device the most according to claim 1, it is characterised in that the airflow hole on described cover plate is one or more；Airflow hole on described dividing plate is one or more.
Graphite deposits device the most according to claim 1, it is characterised in that the airflow hole on described cover plate is crisscross arranged with the airflow hole on adjacent dividing plate.
Graphite deposits device the most according to claim 1, it is characterised in that in described dividing plate, the airflow hole in any two adjacent separator is crisscross arranged.
Graphite deposits device the most according to claim 1, it is characterised in that described in gather dust the cross-sectional area of passage less than the area bottom dust chamber.
Graphite deposits device the most according to claim 1, it is characterised in that described solid material apparatus for placing is graphite crucible, described cover plate is crucible cover.
Graphite deposits device the most according to claim 1, it is characterised in that described dust chamber is arranged above leading dirt passage.
Device the most according to claim 1, it is characterised in that the thickness difference of the blank product that described settling chamber is produced is 0.1～1mm.
9. a chemical vapor deposition stove, it is characterised in that include the graphite deposits device described in claim 1～8 any one.
10. a chemical gas-phase deposition system, it is characterised in that include the chemical vapor deposition stove described in claim 9, multistage dust collecting system and exhaust gas processing device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521144717.XU CN205556772U (en) | 2015-12-31 | 2015-12-31 | Chemical vapor deposition is graphite deposition apparatus for stove |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521144717.XU CN205556772U (en) | 2015-12-31 | 2015-12-31 | Chemical vapor deposition is graphite deposition apparatus for stove |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420686A (en) * | 2015-12-31 | 2016-03-23 | 清远先导材料有限公司 | Graphite depositing device for chemical vapor deposition furnace |
| CN107119322A (en) * | 2017-04-27 | 2017-09-01 | 云南北方驰宏光电有限公司 | The equipment that a kind of double-faced uniform deposits CVDZnS block materials |
| CN107604340A (en) * | 2017-08-31 | 2018-01-19 | 清远先导材料有限公司 | Chemical vapor deposition stove |
| CN111850511A (en) * | 2020-08-28 | 2020-10-30 | 上海岚玥新材料科技有限公司 | Novel pyrolytic graphite vapor deposition device and process |
-
2015
- 2015-12-31 CN CN201521144717.XU patent/CN205556772U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420686A (en) * | 2015-12-31 | 2016-03-23 | 清远先导材料有限公司 | Graphite depositing device for chemical vapor deposition furnace |
| CN107119322A (en) * | 2017-04-27 | 2017-09-01 | 云南北方驰宏光电有限公司 | The equipment that a kind of double-faced uniform deposits CVDZnS block materials |
| CN107119322B (en) * | 2017-04-27 | 2019-09-03 | 云南北方驰宏光电有限公司 | A kind of equipment of double-faced uniform deposition CVDZnS block materials |
| CN107604340A (en) * | 2017-08-31 | 2018-01-19 | 清远先导材料有限公司 | Chemical vapor deposition stove |
| CN107604340B (en) * | 2017-08-31 | 2023-09-01 | 安徽光智科技有限公司 | Chemical Vapor Deposition Furnace |
| CN111850511A (en) * | 2020-08-28 | 2020-10-30 | 上海岚玥新材料科技有限公司 | Novel pyrolytic graphite vapor deposition device and process |
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Effective date of registration: 20200529 Address after: 239000 east of yongyang Road, west of Nanjing Road, north of Anqing road and south of Lu'an road in Langya Economic Development Zone, Langya District, Chuzhou City, Anhui Province Patentee after: Anhui Guangzhi Technology Co.,Ltd. Address before: 511517 Guangdong city of Qingyuan province high tech Zone Industrial Park Baijia No. 27-9 Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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