CN205544903U - Sj-mos管电路的拓扑结构 - Google Patents
Sj-mos管电路的拓扑结构 Download PDFInfo
- Publication number
- CN205544903U CN205544903U CN201620074401.6U CN201620074401U CN205544903U CN 205544903 U CN205544903 U CN 205544903U CN 201620074401 U CN201620074401 U CN 201620074401U CN 205544903 U CN205544903 U CN 205544903U
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- Prior art keywords
- mos pipe
- mos
- pipe
- topological structure
- fast recovery
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000011084 recovery Methods 0.000 claims abstract description 29
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
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Priority Applications (1)
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CN201620074401.6U CN205544903U (zh) | 2016-01-25 | 2016-01-25 | Sj-mos管电路的拓扑结构 |
Applications Claiming Priority (1)
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CN201620074401.6U CN205544903U (zh) | 2016-01-25 | 2016-01-25 | Sj-mos管电路的拓扑结构 |
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Publication Number | Publication Date |
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CN205544903U true CN205544903U (zh) | 2016-08-31 |
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CN201620074401.6U Active CN205544903U (zh) | 2016-01-25 | 2016-01-25 | Sj-mos管电路的拓扑结构 |
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CN (1) | CN205544903U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106936298A (zh) * | 2017-03-15 | 2017-07-07 | 华为技术有限公司 | 一种半导体器件、控制方法以及变流器 |
CN110149108A (zh) * | 2019-06-05 | 2019-08-20 | 浙江明德微电子股份有限公司 | 一种低功耗的复合sj-mos管及其制备方法 |
-
2016
- 2016-01-25 CN CN201620074401.6U patent/CN205544903U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106936298A (zh) * | 2017-03-15 | 2017-07-07 | 华为技术有限公司 | 一种半导体器件、控制方法以及变流器 |
CN106936298B (zh) * | 2017-03-15 | 2020-01-10 | 华为技术有限公司 | 一种半导体器件、控制方法以及变流器 |
CN110149108A (zh) * | 2019-06-05 | 2019-08-20 | 浙江明德微电子股份有限公司 | 一种低功耗的复合sj-mos管及其制备方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Topological structure of SJ -MOS pipe circuit Effective date of registration: 20170117 Granted publication date: 20160831 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Registration number: 2017990000043 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CP01 | Change in the name or title of a patent holder |
Address after: 214135 China Jiangsu Sensor Network International Innovation Park 200, Linghu Avenue, Wuxi new district. Patentee after: WUXI UNIGROUP MICROELECTRONICS CO.,LTD. Address before: 214135 China Jiangsu Sensor Network International Innovation Park 200, Linghu Avenue, Wuxi new district. Patentee before: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20160831 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Registration number: 2017990000043 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240612 Address after: 100000 106A, Floor 1, B-1, Zhongguancun Dongsheng Science Park, 66 Xixiaokou Road, Haidian District, Northern Territory, Beijing Patentee after: ZIGUANG TONGXIN MICROELECTRONICS CO.,LTD. Country or region after: China Address before: 214135 Jiangsu Wuxi New District, 200, Linghu Road, China, four floor, D2 International Innovation Park, China sensor network. Patentee before: WUXI UNIGROUP MICROELECTRONICS CO.,LTD. Country or region before: China |
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TR01 | Transfer of patent right |