CN205452346U

CN205452346U - Compound basic heat conductive area source of copper aluminium

Info

Publication number: CN205452346U
Application number: CN201620159577.1U
Authority: CN
Inventors: 戴小琴
Original assignee: Shenzhen Crescent Optoelectronic Co ltd
Current assignee: Crescent Optoelectronics (Shenzhen) Limited by Share Ltd
Priority date: 2016-03-03
Filing date: 2016-03-03
Publication date: 2016-08-10
Anticipated expiration: 2026-03-03

Abstract

The utility model provides a compound basic heat conductive area source of copper aluminium, includes and is used for realizing switching on and the welded circuit layer for improve the light reflex, insulatingly hinder the white oil layer of welding, be used for to the quick uniform heat dissipation's of circuit layer heat dissipation layer, the white oil layer is through the surface of high reflection of light spraying technology spraying at the circuit layer, the circuit layer sets up the surface on the heat dissipation layer, the heat dissipation layer includes copper layer, aluminium lamination, wherein the aluminium lamination sets up the lower extreme on the copper layer, the circuit layer sets up the surface on the copper layer. The utility model discloses can effectively reduce wafer PN junction temperature, reduce phosphor powder and receive the thermal failure, reduce the overstocked metal that leads to the fact of heat and be out of shape, improve life.

Description

Copper-Aluminum compound base heat-conducting type area source

Technical field

This utility model relates to LED light source technical field, espespecially a kind of Copper-Aluminum compound base heat-conducting type area source.

Background technology

LED (LightingEmittingDiode) i.e. light emitting diode, is a kind of semiconducting solid luminescent device.Current energy-conserving and environment-protective are whole world major issues, and low-carbon (LC) life is gradually rooted in the hearts of the people.At lighting field, the application of power LED luminous product is just attract the sight of common people, and 21st century will enter the novel illumination light source epoch with LED as representative.The features such as LED has energy-saving and environmental protection, life-span length, sound construction, and response time is fast, can be widely applied to the fields such as various general lighting, backlight, display, instruction and urban landscape.

Existing LED light source is primarily present following shortcoming:

1. when electric current acts on wafer by wire when, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, and luminous point conversion ratio only 30%, the energy of 70% is converted into heat；

2.PN junction temperature can not be derived the most uniformly, and when LED wafer PN junction temperature is higher than limiting temperature, LED wafer reverse current increases, and reverse current is the biggest, LED wafer PN junction punctures damage bigger, causes light source fails；

3. in Surface Machining, the used fluorescent glue of coating processes combines together with wafer embedding, when wafer generation temperature passes through heat exchange action in fluorescent material, makes fluorescent material be raised with temperature by thermal failure by thermal failure, fluorescent material and strengthen；

4. wafer all uses highly conducting metal substrate such as aluminium oxide as heat sink, and this highly conducting metal material at high temperature temperature distortion coefficient is relatively big, and metal heat sink is heated and the cold cycling formed of lowering the temperature forms milli machine motion and result in wafer and heat sink disconnection and make LED failure.

Utility model content

For solving the problems referred to above, this utility model provides one can effectively reduce wafer PN junction temperature, reduces fluorescent material and is overstock and cause flow of metal by thermal failure, reduction heat, improve the Copper-Aluminum compound base heat-conducting type area source in service life.

For achieving the above object, the technical solution adopted in the utility model is: a kind of Copper-Aluminum compound base heat-conducting type area source,

Including in order to realize energising and the circuit layer welded, in order to improve luminous reflectance, the white oil layer of insulation welding resistance, in order to the heat dissipating layer that circuit layer Quick uniform is dispelled the heat, described white oil layer is sprayed on the surface of circuit layer by high reflective spraying coating process, described circuit layer is arranged on the surface of heat dissipating layer, described heat dissipating layer includes that layers of copper, aluminium lamination, wherein said aluminium lamination are arranged on the lower end of layers of copper, and described circuit layer is arranged on the surface of layers of copper.

Specifically, described layers of copper and aluminium lamination connect combination by hot melting way.

Specifically, it is additionally provided with insulating barrier between described circuit layer and heat dissipating layer.

Specifically, described insulating barrier is glass layer or ceramic layer.

Specifically, described circuit layer includes conduction region and LED wafer district, and described conduction region is positioned at the both sides in LED wafer district, is provided with LED wafer, and is electrically connected with conduction region in LED wafer district.

The beneficial effects of the utility model are:

Utilize the layers of copper first basic unit as heat exchange of high heat conduction low-thermal-expansion, and aluminium lamination is set in layers of copper lower end as buffering heat dissipating layer, design direction heat sink by LED wafer for light source entirety heat, layers of copper, aluminium lamination is derived and distributes, reduce fluorescent material by thermal failure, heat can be produced efficiently from the heat sink middle taking-up PN junction of LED wafer, reduce PN junction temperature, reverse current is avoided to puncture LED wafer and lost efficacy, and layers of copper has the little feature quick conductive of high heat conduction expansion and causes flow of metal to reduce hot overstocking, it is effectively improved service life.

Accompanying drawing explanation

Fig. 1 is structural representation of the present utility model；

Fig. 2 is the structural representation of circuit layer.

Drawing reference numeral illustrates: 1-white oil layer；2-circuit layer；21-conduction region；22-LED wafer region；23-LED wafer；31-layers of copper；32-aluminium lamination.

Detailed description of the invention

Referring to shown in Fig. 1-2, this utility model is about a kind of Copper-Aluminum compound base heat-conducting type area source, including using

To realize energising and the circuit layer 2 welded, in order to improve luminous reflectance, the white oil layer 1 of insulation welding resistance, in order to the heat dissipating layer that circuit layer 2 Quick uniform is dispelled the heat, described white oil layer 1 is sprayed on the surface of circuit layer 2 by high reflective spraying coating process, described circuit layer 2 is arranged on the surface of heat dissipating layer, described heat dissipating layer includes layers of copper 31, aluminium lamination 32, and wherein said aluminium lamination 32 is arranged on the lower end of layers of copper 31, and described circuit layer 2 is arranged on the surface of layers of copper 31.

nullCompared to existing technology，This utility model utilizes the layers of copper 31 first basic unit as heat exchange of high heat conduction low-thermal-expansion，And aluminium lamination 32 is set in layers of copper 31 lower end as buffering heat dissipating layer，Light source entirety heat is heat sink by LED wafer 23、Layers of copper、The design direction of aluminium lamination 32 is derived and is distributed，Reduce fluorescent material by thermal failure，Heat can be produced efficiently from the heat sink middle taking-up PN junction of LED wafer 23，Reduce PN junction temperature，Reverse current is avoided to puncture LED wafer 23 and lost efficacy，And layers of copper 31 has the little feature quick conductive of high heat conduction expansion, and to reduce, heat is overstocked causes flow of metal，It is effectively improved service life，Wherein the heat conduction of copper is fast (400W/M.KW)，The heat dissipation channel of LED wafer 23 can be strengthened，Realize heat flux uniformity processes (equivalent asbestos gauge effect)，Thermal conductivity points uniform heat conduction is made to become thermal conductive surface to expand heat conduction amount，As prioritization scheme，Copper can be with golden or silver-colored、Stannum、Nickel、The fusion of antioxidant or alloy improve the link compactness of each encapsulation original paper to a greater extent，Improve heat transduction；Solve aluminium and the aluminium alloy heat that is beyond one's reach to forward ability, copper and copper alloy thermal conductivity to and be up to 400W/M.KW, and aluminium and aluminium alloy thermal conductivity are less than 240W/M.KW；It is little that copper cash type thermal coefficient of expansion commonly uses aluminium relative to LED, copper thermal linear expansion coefficient 17.51E-6/ DEG C, aluminium thermal linear expansion coefficient 23.21E-6/ DEG C, and LED wafer 23 sinks to the bottom and silica gel material thermal linear expansion coefficient is less than 101E-6/ DEG C, use that copper material is the most bonding with LED wafer 23 and silica gel can effectively be reduced thermal deformation and cause dead lamp.

Specifically, described layers of copper 31 and aluminium lamination 32 connect combination by hot melting way.

Use such scheme, be combined with hot melting way between aluminium lamination 32 with layers of copper 31, layers of copper 31 and aluminium lamination 2 can be made to form gapless heat conduction, improve the effect of heat conduction.

Specifically, being additionally provided with insulating barrier between described circuit layer 2 and heat dissipating layer, described insulating barrier includes glass layer or ceramic layer.

Using such scheme, by arranging insulating barrier at circuit layer 2 and heat dissipating layer part, insulate reaching the layers of copper 31 of circuit layer 2 and bottom, formation thermal conductivity region separates with electrical areas thermoelectricity.

Specifically, described circuit layer 2 includes conduction region 21 and LED wafer district 22, and described conduction region 21 is positioned at the both sides in LED wafer district 22, is provided with LED wafer 23, and is electrically connected with conduction region 21 in LED wafer district 22.

Use such scheme, in circuit layer 2, conduction region 21 realizes the electric connection with LED wafer 23, in order to externally energising, LED wafer district 22 is in order to the placement of LED wafer 23, circuit layer 2 surface-coated has welding resistance white oil layer 1, in order to circuit layer 2 to be insulated and welding resistance, play the effect of the reflection of light, improve the luminance of LED wafer 23.

Embodiment of above is only to be described preferred implementation of the present utility model; not scope of the present utility model is defined; on the premise of without departing from this utility model design spirit; various deformation that the technical solution of the utility model is made by this area ordinary skill technical staff and improvement, all should fall in the protection domain that claims of the present utility model determine.

Claims

1. a Copper-Aluminum compound base heat-conducting type area source, it is characterized in that, including in order to realize energising and the circuit layer welded, in order to improve luminous reflectance, the white oil layer of insulation welding resistance, in order to the heat dissipating layer dispelling the heat circuit layer Quick uniform, described white oil layer is sprayed on the surface of circuit layer by high reflective spraying coating process, described circuit layer is arranged on the surface of heat dissipating layer, described heat dissipating layer includes that layers of copper, aluminium lamination, wherein said aluminium lamination are arranged on the lower end of layers of copper, and described circuit layer is arranged on the surface of layers of copper.

Copper-Aluminum compound base heat-conducting type area source the most according to claim 1, it is characterised in that described layers of copper and aluminium lamination connect combination by hot melting way.

Copper-Aluminum compound base heat-conducting type area source the most according to claim 1, it is characterised in that be additionally provided with insulating barrier between described circuit layer and heat dissipating layer.

Copper-Aluminum compound base heat-conducting type area source the most according to claim 1, it is characterised in that described insulating barrier is glass layer or ceramic layer.

Copper-Aluminum compound base heat-conducting type area source the most according to claim 1, it is characterised in that described circuit layer includes conduction region and LED wafer district, and described conduction region is positioned at the both sides in LED wafer district, is provided with LED wafer, and is electrically connected with conduction region in LED wafer district.