CN205407217U - Intelligent release that decompression is under -voltage - Google Patents
Intelligent release that decompression is under -voltage Download PDFInfo
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- CN205407217U CN205407217U CN201620176530.6U CN201620176530U CN205407217U CN 205407217 U CN205407217 U CN 205407217U CN 201620176530 U CN201620176530 U CN 201620176530U CN 205407217 U CN205407217 U CN 205407217U
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Abstract
The utility model relates to an intelligent release that decompression is under -voltage, including release and connected control circuit board, the last voltage detection circuit of control circuit board sends grid voltage sampled signal to CPU control chip, and CPU control chip reads the delay time control release drive circuit work of settlement, and two sets of isolation powers of inputing CPU control chip and release drive circuit through switching power supply circuit reach the function that makes the release actuation, keeps or thread off. The beneficial effects of the utility model are that: the release confining force does not receive the grid voltage influence of fluctuations, and electrical energy conversion is efficient, and the stand -by power consumption is low, and time delay hold time can satisfy the requirement of 10S decompression delayed after the release decompression.
Description
Technical field
This utility model relates to decompression device for under-voltage releasing equipment field, especially a kind of under-voltage intelligent electrical apparatus release of decompression for low-voltage circuit breaker with delay function.
Background technology
Current low-voltage circuit breaker decompression device for under-voltage releasing equipment technical scheme is conventional linear regulated power supply through PWM carrier wave rear drive trip coil adhesive, maintenance or dropout, its shortcoming is that energy conversion efficiency is low, product temperature rise, coil retentivity are big with voltage ripple of power network scope, after electrical apparatus release decompression the time delay retention time short, it is impossible to meet the particular/special requirement of some electricity consumption occasions and distributed photovoltaic power generation.
Summary of the invention
For solving the defect existed in above-mentioned prior art, this utility model provides a kind of under-voltage intelligent electrical apparatus release of decompression for low-voltage circuit breaker with delay function, network system suitable in rated voltage AC220V and AC380V, energy conversion efficiency is high, stand-by power consumption is low, can meet the harsh requirement of 10S decompression delayed releasing.
A kind of under-voltage intelligent electrical apparatus release of decompression described in the utility model, including electrical apparatus release and control circuit plate, described electrical apparatus release is connected with described control circuit plate, and described control circuit plate includes voltage detecting circuit, CPU control chip, decompression accumulator, switching power circuit, electrical apparatus release drive circuit and delay setting circuit；
Wherein, the input of described voltage detecting circuit is connected with electrical network, and its outfan connects CPU control chip, for inputting described CPU control chip after electrical network high pressure is converted to low tension signal；Described delay setting circuit is connected with described CPU control chip, and default delay time signal inputs to described CPU control chip；Described CPU control chip outfan is connected with described electrical apparatus release drive circuit, sends and controls signal to described electrical apparatus release drive circuit, controls described electrical apparatus release adhesive, maintenance or dropout；
The input of described decompression accumulator is connected with electrical network, its outfan is connected with described electrical apparatus release drive circuit and described switching power circuit respectively, after line voltage rectification, electric capacity will be charged energy storage, and provide high-voltage DC power supply to described switching power circuit；High-voltage DC power supply is converted to the low-voltage dc power supply output of two groups of isolation by described switching power circuit by high frequency transformer, one of which low-voltage dc power supply is connected with described electrical apparatus release drive circuit and provides described CPU control chip power supply, and another group low-voltage dc power supply is only to described electrical apparatus release drive circuitry；Described electrical apparatus release drive circuit receives the signal of described CPU control chip output, and the power supply of input is carried out voltage switching to drive electrical apparatus release to work.
Improve further, described switching power circuit includes transformator T1, switch chip U2, optocoupler U3, primary and the described decompression accumulator outfan of described transformator T1 is connected, two groups of insulating power supplies of secondary output of described transformator T1, one of which power supply is followed by AGND through diode D6 parallel connection storage capacitor C13 and resistance R22, obtaining DC10V DC source, this group power supply and described primary isolated from power, only to described electrical apparatus release drive circuitry；Another group power supply obtains DC20V DC source by the diode D5 electric capacity C8 through being connected in parallel, DC12V DC source is obtained after three-terminal voltage-stabilizing chip U5, obtaining DC5V DC source after shunt capacitance C9, electric capacity C10 after three-terminal voltage-stabilizing chip U6, this group power supply and described primary power supply are not isolated.
nullImprove further，Described decompression accumulator includes bridge heap BR1、Resistance R6、Resistance R7、Resistance R8、Resistance R9、Resistance R10、Stabilivolt VZ1、Stabilivolt VZ2、Stabilivolt VZ3、Stabilivolt VZ4、Diode D2、Metal-oxide-semiconductor Q1、Electric capacity C1，The ac input end of described bridge heap BR1 is connected with electrical network，Its negative pole meets GND，Positive pole passes through resistance R6、Resistance R7、It is divided into two-way after resistance R8，One tunnel is connected with metal-oxide-semiconductor Q1 drain electrode，Separately lead up to resistance R10、Metal-oxide-semiconductor Q1 grid is connected after resistance R9，Simultaneously through stabilivolt VZ1、Stabilivolt VZ2、It is connected to GND after stabilivolt VZ3，Stabilivolt VZ4 connects grid and the source electrode of metal-oxide-semiconductor Q1，Described diode D2 anode connects the source electrode of metal-oxide-semiconductor Q1，Its negative electrode meets GND by described electric capacity C1，The positive pole of described electric capacity C1 is connected to switching power circuit and electrical apparatus release drive circuit,The DC voltage after the rectified carrier Control by metal-oxide-semiconductor Q1、Diode D2 obtains galvanic current pressure energy storage in electric capacity C1 two ends.
Improve further, described voltage detecting circuit includes bridge heap BR1, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5 and electric capacity C2, the positive pole of described bridge heap BR1 is connected with resistance R1, resistance R2, resistance R3, through resistance R4 ground connection, and access described CPU control chip after resistance R5 coupling electric capacity C2 filtering.
nullImprove further，Described electrical apparatus release drive circuit includes diode D7、Diode D8、Diode D9、Diode D10、Optocoupler U7、Metal-oxide-semiconductor drives U8、Resistance R23、Resistance R24、Resistance R25、Resistance R26、Resistance R27、Metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3，Described electric capacity C1 positive pole is piled BR1 positive pole after diode D7 and is parallel to metal-oxide-semiconductor Q2 drain electrode after diode D8 with bridge，DC20V power supply meets AGND through diode D9 and connects metal-oxide-semiconductor Q2 source electrode，Connect metal-oxide-semiconductor Q3 drain electrode through described electrical apparatus release simultaneously，Metal-oxide-semiconductor Q3 source electrode is connected to GND，1 foot of optocoupler U7 meets DC5V，3 feet of optocoupler U7 meet DC10V，4 feet of optocoupler U7 are connected to metal-oxide-semiconductor Q2 grid by resistance R24，Meet AGND by resistance R24 and resistance R25 simultaneously，Resistance R25 is parallel between grid and the source electrode of metal-oxide-semiconductor Q2，Metal-oxide-semiconductor drives 4 feet of U8 to meet GND，Metal-oxide-semiconductor drives 1 foot of U8 to meet DC12V，Metal-oxide-semiconductor drives 3 feet of U8 to be connected to metal-oxide-semiconductor Q3 grid by resistance R26，Meet GND by resistance R26 and resistance R27 simultaneously，Resistance R27 is parallel between grid and the source electrode of metal-oxide-semiconductor Q3.
Improve further, the low pressure measurement signal of described voltage detecting circuit accesses 11 feet of described CPU control chip, described delay setting circuit output signal accesses 2,3,6,7,8,9 feet of described CPU control chip, 2 feet of the optocoupler U7 of described electrical apparatus release drive circuit access 10 feet of described CPU control chip by resistance R23, and described metal-oxide-semiconductor drives 5 feet of U8 to access 5 feet of described CPU control chip.
Improving further, described electrical apparatus release is magnetictrip.
The beneficial effects of the utility model are: intelligent electrical apparatus release energy conversion efficiency that this decompression is under-voltage is high, and stand-by power consumption is low, and trip coil retentivity is not by grid voltage fluctuation influence, and after electrical apparatus release decompression, the time delay retention time can meet the requirement of 10S decompression time delay.
Accompanying drawing explanation
In order to make content of the present utility model be easier to be clearly understood, below according to specific embodiment and in conjunction with accompanying drawing, this utility model is described in further detail.
Fig. 1 is utility model works schematic diagram.
Fig. 2 is this utility model voltage detecting circuit and decompression accumulator schematic diagram.
Fig. 3 is this utility model Switching Power Supply DC-DC transfer principle figure.
Fig. 4 is this utility model electrical apparatus release driving circuit principle figure.
Fig. 5 is this utility model delay setting circuit schematic diagram.
Fig. 6 is this utility model CPU control chip catenation principle figure.
Detailed description of the invention
A kind of under-voltage intelligent electrical apparatus release of decompression described in the utility model, including electrical apparatus release and control circuit plate, described electrical apparatus release is connected with described control circuit plate, and described control circuit plate includes voltage detecting circuit, CPU control chip, decompression accumulator, switching power circuit, electrical apparatus release drive circuit and delay setting circuit；
Wherein, the input of described voltage detecting circuit is connected with electrical network, and its outfan connects CPU control chip；Described delay setting circuit is connected with described CPU control chip；Described CPU control chip outfan is connected with described electrical apparatus release drive circuit；The input of described decompression accumulator is connected with electrical network, and its outfan is connected with described electrical apparatus release drive circuit and described switching power circuit respectively；Described switching power circuit exports two groups of insulating power supplies, one of which output is connected with described electrical apparatus release drive circuit and as the power supply of described CPU control chip, another group output is connected with described electrical apparatus release drive circuit, and it is only used as the triggering voltage turning on described driver drives circuit；Described electrical apparatus release drive circuit receives the signal of described CPU control chip output, and the power supply of input is carried out voltage switching to drive electrical apparatus release to work.
Physical circuit connected mode is as follows:
Described switching power circuit includes transformator T1, switch chip U2, optocoupler U3, primary and the described decompression accumulator outfan of described transformator T1 is connected, two groups of insulating power supplies of secondary output of described transformator T1, one of which power supply is followed by AGND through diode D6 parallel connection storage capacitor C13 and resistance R22, obtain DC10V DC source, this group power supply and described primary isolated from power.Another group power supply obtains DC20V DC source by the diode D5 electric capacity C8 through being connected in parallel, DC12V DC source is obtained after three-terminal voltage-stabilizing chip U5, obtaining DC5V DC source after shunt capacitance C9, electric capacity C10 after three-terminal voltage-stabilizing chip U6, this group power supply and described primary power supply are not isolated.
nullDescribed decompression accumulator includes bridge heap BR1、Resistance R6、Resistance R7、Resistance R8、Resistance R9、Resistance R10、Stabilivolt VZ1、Stabilivolt VZ2、Stabilivolt VZ3、Stabilivolt VZ4、Diode D2、Metal-oxide-semiconductor Q1、Electric capacity C1，The ac input end of described bridge heap BR1 is connected with electrical network，Its negative pole meets GND，Positive pole passes through resistance R6、Resistance R7、It is divided into two-way after resistance R8，One tunnel is connected with metal-oxide-semiconductor Q1 drain electrode，Separately lead up to resistance R10、Metal-oxide-semiconductor Q1 grid is connected after resistance R9，Simultaneously through stabilivolt VZ1、Stabilivolt VZ2、It is connected to GND after stabilivolt VZ3，Stabilivolt VZ4 connects grid and the source electrode of metal-oxide-semiconductor Q1，Described diode D2 anode connects the source electrode of metal-oxide-semiconductor Q1，Its negative electrode meets GND by described electric capacity C1，The positive pole of described electric capacity C1 is connected to switching power circuit and electrical apparatus release drive circuit,The DC voltage after the rectified carrier Control by metal-oxide-semiconductor Q1、Diode D2 obtains galvanic current pressure energy storage in electric capacity C1 two ends.
nullDescribed electrical apparatus release drive circuit includes diode D7、Diode D8、Diode D9、Diode D10、Optocoupler U7、Metal-oxide-semiconductor drives U8、Resistance R23、Resistance R24、Resistance R25、Resistance R26、Resistance R27、Metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3，Described electric capacity C1 positive pole is piled BR1 positive pole after diode D7 and is parallel to metal-oxide-semiconductor Q2 drain electrode after diode D8 with bridge，DC20V power supply meets AGND through diode D9 and connects metal-oxide-semiconductor Q2 source electrode，Connect metal-oxide-semiconductor Q3 drain electrode through described electrical apparatus release simultaneously，Metal-oxide-semiconductor Q3 source electrode is connected to GND，1 foot of optocoupler U7 meets DC5V，3 feet of optocoupler U7 meet DC10V，4 feet of optocoupler U7 are connected to metal-oxide-semiconductor Q2 grid by resistance R24，Meet AGND by resistance R24 and resistance R25 simultaneously，Resistance R25 is parallel between grid and the source electrode of metal-oxide-semiconductor Q2，Metal-oxide-semiconductor drives 4 feet of U8 to meet GND，Metal-oxide-semiconductor drives 1 foot of U8 to meet DC12V，Metal-oxide-semiconductor drives 3 feet of U8 to be connected to metal-oxide-semiconductor Q3 grid by resistance R26，Meet GND by resistance R26 and resistance R27 simultaneously，Resistance R27 is parallel between grid and the source electrode of metal-oxide-semiconductor Q3.
Described voltage detecting circuit includes bridge heap BR1, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5 and electric capacity C2, the positive pole of described bridge heap BR1 is connected with resistance R1, resistance R2, resistance R3, through resistance R4 ground connection, and access described CPU control chip after resistance R5 coupling electric capacity C2 filtering.
The low pressure measurement signal of described voltage detecting circuit accesses 11 feet of described CPU control chip, described delay setting circuit output signal accesses 2,3,6,7,8,9 feet of described CPU control chip, 2 feet of the optocoupler U7 of described electrical apparatus release drive circuit access 10 feet of described CPU control chip by resistance R23, and described metal-oxide-semiconductor drives 5 feet of U8 to access 5 feet of described CPU control chip.
Described voltage detecting circuit detects when line voltage reaches more than the 85% of rated voltage, described CPU control chip sends pickup signal to described electrical apparatus release drive circuit, drive metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 conducting, now bridge heap BR1 rectification after voltage and Chu Rong electric capacity C1 on DC voltage superposition combined effect in electrical apparatus release so that it is quick pick-up；After described electrical apparatus release adhesive, described CPU control chip sends maintenance signal to described electrical apparatus release drive circuit, drive metal-oxide-semiconductor Q2 to disconnect, metal-oxide-semiconductor Q3 still turns on, and the DC20V power supply that described electrical apparatus release is exported by described switching power circuit is powered, and electrical apparatus release keeps attracting state；Described voltage detecting circuit detects line voltage in real time, and when dropping to 35% ~ 70% rated voltage or directly decompression when line voltage, electric capacity electric discharge is held in the storage of described decompression accumulator, keeps metal-oxide-semiconductor Q3 still in conducting state, and electrical apparatus release still keeps adhesive；If in the delay time of regulation, line voltage returns back to more than the 85% of rated voltage, and electrical apparatus release keeps attracting state, if line voltage is abnormal within the time of regulation, CPU control chip drives the metal-oxide-semiconductor of electrical apparatus release drive circuit to drive U8, makes metal-oxide-semiconductor Q3 disconnect, and electrical apparatus release is threaded off.
The foregoing is only preferred version of the present utility model, be not intended as further restriction of the present utility model, every various equivalence changes utilizing this utility model description and accompanying drawing content to make are all within protection domain of the present utility model.
Claims (7)
1. the under-voltage intelligent electrical apparatus release of decompression, it is characterized in that, including electrical apparatus release and control circuit plate, described electrical apparatus release is connected with described control circuit plate, and described control circuit plate includes voltage detecting circuit, CPU control chip, decompression accumulator, switching power circuit, electrical apparatus release drive circuit and delay setting circuit；
The input of described voltage detecting circuit is connected with electrical network, and its outfan connects CPU control chip, inputs described CPU control chip after electrical network high pressure is converted to low tension signal；Described delay setting circuit is connected with described CPU control chip, and default delay time signal inputs to described CPU control chip；Described CPU control chip outfan is connected with described electrical apparatus release drive circuit, sends and controls signal to described electrical apparatus release drive circuit, controls described electrical apparatus release adhesive, maintenance or dropout；
The input of described decompression accumulator is connected with electrical network, its outfan is connected with described electrical apparatus release drive circuit and described switching power circuit respectively, after line voltage rectification, electric capacity will be charged energy storage, and provide high-voltage DC power supply to described switching power circuit；High-voltage DC power supply is converted to the low-voltage dc power supply output of two groups of isolation by described switching power circuit by high frequency transformer, one of which low-voltage dc power supply is connected with described electrical apparatus release drive circuit and provides described CPU control chip power supply, and another group low-voltage dc power supply is only to described electrical apparatus release drive circuitry；Described electrical apparatus release drive circuit receives the signal of described CPU control chip output, and the power supply of input is switched over and drives electrical apparatus release to work.
null2. a kind of under-voltage intelligent electrical apparatus release of decompression according to claim 1，It is characterized in that，Described switching power circuit includes transformator T1、Switch chip U2、Optocoupler U3，Primary and the described decompression accumulator outfan of described transformator T1 is connected，Two groups of insulating power supplies of secondary output of described transformator T1，One of which power supply is followed by AGND through diode D6 parallel connection storage capacitor C13 and resistance R22，Obtain DC10V DC source，The primary source of this group power supply and described transformator T1 is isolated，Another group power supply obtains DC20V DC source by the diode D5 electric capacity C8 through being connected in parallel，DC12V DC source is obtained after three-terminal voltage-stabilizing chip U5，Shunt capacitance C9 after three-terminal voltage-stabilizing chip U6、DC5V DC source is obtained after electric capacity C10，This group power supply and described primary power supply are not isolated.
null3. the under-voltage intelligent electrical apparatus release of a kind of decompression according to any one of claim 1-2，It is characterized in that，Described decompression accumulator includes bridge heap BR1、Resistance R6、Resistance R7、Resistance R8、Resistance R9、Resistance R10、Stabilivolt VZ1、Stabilivolt VZ2、Stabilivolt VZ3、Stabilivolt VZ4、Diode D2、Metal-oxide-semiconductor Q1、Electric capacity C1，The ac input end of described bridge heap BR1 is connected with electrical network，Its negative pole meets GND，Positive pole passes through resistance R6、Resistance R7、It is divided into two-way after resistance R8，One tunnel is connected with metal-oxide-semiconductor Q1 drain electrode，Separately lead up to resistance R10、Metal-oxide-semiconductor Q1 grid is connected after resistance R9，Simultaneously through stabilivolt VZ1、Stabilivolt VZ2、It is connected to GND after stabilivolt VZ3，Stabilivolt VZ4 connects grid and the source electrode of metal-oxide-semiconductor Q1，Described diode D2 anode connects the source electrode of metal-oxide-semiconductor Q1，Its negative electrode meets GND by described electric capacity C1，The positive pole of described electric capacity C1 is connected to switching power circuit and electrical apparatus release drive circuit,The DC voltage after the rectified carrier Control by metal-oxide-semiconductor Q1、Diode D2 obtains galvanic current pressure energy storage in electric capacity C1 two ends.
4. a kind of under-voltage intelligent electrical apparatus release of decompression according to claim 3, it is characterized in that, described voltage detecting circuit includes bridge heap BR1, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5 and electric capacity C2, the positive pole of described bridge heap BR1 is connected with resistance R1, resistance R2, resistance R3, through resistance R4 ground connection, and access described CPU control chip after resistance R5 coupling electric capacity C2 filtering.
null5. a kind of under-voltage intelligent electrical apparatus release of decompression according to claim 4，It is characterized in that，Described electrical apparatus release drive circuit includes diode D7、Diode D8、Diode D9、Diode D10、Optocoupler U7、Metal-oxide-semiconductor drives U8、Resistance R23、Resistance R24、Resistance R25、Resistance R26、Resistance R27、Metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3，Described electric capacity C1 positive pole is piled BR1 positive pole after diode D7 and is parallel to metal-oxide-semiconductor Q2 drain electrode after diode D8 with bridge，DC20V power supply meets AGND through diode D9 and connects metal-oxide-semiconductor Q2 source electrode，Connect metal-oxide-semiconductor Q3 drain electrode through described electrical apparatus release simultaneously，Metal-oxide-semiconductor Q3 source electrode is connected to GND，1 foot of optocoupler U7 meets DC5V，3 feet of optocoupler U7 meet DC10V，4 feet of optocoupler U7 are connected to metal-oxide-semiconductor Q2 grid by resistance R24，Meet AGND by resistance R24 and resistance R25 simultaneously，Resistance R25 is parallel between grid and the source electrode of metal-oxide-semiconductor Q2，Metal-oxide-semiconductor drives 4 feet of U8 to meet GND，Metal-oxide-semiconductor drives 1 foot of U8 to meet DC12V，Metal-oxide-semiconductor drives 3 feet of U8 to be connected to metal-oxide-semiconductor Q3 grid by resistance R26，Meet GND by resistance R26 and resistance R27 simultaneously，Resistance R27 is parallel between grid and the source electrode of metal-oxide-semiconductor Q3.
6. a kind of under-voltage intelligent electrical apparatus release of decompression according to claim 5, it is characterized in that, the low pressure measurement signal of described voltage detecting circuit accesses 11 feet of described CPU control chip, described delay setting circuit output signal accesses 2,3,6,7,8,9 feet of described CPU control chip, 2 feet of the optocoupler U7 of described electrical apparatus release drive circuit access 10 feet of described CPU control chip by resistance R23, and described metal-oxide-semiconductor drives 5 feet of U8 to access 5 feet of described CPU control chip.
7. a kind of under-voltage intelligent electrical apparatus release of decompression according to claim 6, it is characterised in that described electrical apparatus release is magnetictrip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620176530.6U CN205407217U (en) | 2016-03-09 | 2016-03-09 | Intelligent release that decompression is under -voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620176530.6U CN205407217U (en) | 2016-03-09 | 2016-03-09 | Intelligent release that decompression is under -voltage |
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| Publication Number | Publication Date |
|---|---|
| CN205407217U true CN205407217U (en) | 2016-07-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620176530.6U Withdrawn - After Issue CN205407217U (en) | 2016-03-09 | 2016-03-09 | Intelligent release that decompression is under -voltage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552830A (en) * | 2016-03-09 | 2016-05-04 | 苏州未来电器股份有限公司 | Intelligent release for under voltage and voltage loss |
-
2016
- 2016-03-09 CN CN201620176530.6U patent/CN205407217U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552830A (en) * | 2016-03-09 | 2016-05-04 | 苏州未来电器股份有限公司 | Intelligent release for under voltage and voltage loss |
| CN105552830B (en) * | 2016-03-09 | 2018-11-13 | 苏州未来电器股份有限公司 | A kind of under-voltage intelligent electrical apparatus release of decompression |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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| AV01 | Patent right actively abandoned |
Granted publication date: 20160727 Effective date of abandoning: 20181113 |