CN205246224U - Novel little bolometer based on infrared antenna - Google Patents
Novel little bolometer based on infrared antenna Download PDFInfo
- Publication number
- CN205246224U CN205246224U CN201520907888.7U CN201520907888U CN205246224U CN 205246224 U CN205246224 U CN 205246224U CN 201520907888 U CN201520907888 U CN 201520907888U CN 205246224 U CN205246224 U CN 205246224U
- Authority
- CN
- China
- Prior art keywords
- micro
- infrared
- layer
- antenna
- bolometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model is suitable for a non - refrigeration infrared detection technical field provides a novel little bolometer based on infrared antenna who has antenna structure. The bolometer includes antenna structure, underlying structure and microbridge structure a little, and this underlying structure is located microbridge structure below, and forms the optical resonator between the two, and this antenna structure has the arm of two relative extensions, and this optical resonator is arranged in the clearance that forms between two arms, and the upper surface of these two arms and underlying structure all has the infrared external reflection in situ. A little antenna structure of bolometer is showing and has strengthened infrared ray intensity, has improved detectivity.
Description
Technical field
The utility model belongs to uncooled ir detection technique field, relates to a kind of thermal infrared imager technology, and particularly, the utility model relates to a kind of micro-bolometer that comprises antenna structure.
Background technology
Thermal infrared imager is to utilize Infrared Detectors, optical imagery object lens to receive the infrared radiation signal of measured target, through the infrared thermal imagery of measured object is scanned and converts the signal of telecommunication to, shows thermal-induced imagery through amplifying to process and change by monitor. Thermal infrared imager, according to detector image-forming principle, can be divided into two kinds of photon Infrared Detectors and temperature-sensitive Infrared Detectors. Temperature-sensitive Infrared Detectors utilizes the fuel factor of infra-red radiation, measures by the conversion of heat and other physical quantitys. Micro-metering bolometer (micro-bolometer) is the one of temperature-sensitive Infrared Detectors, wherein mainstream technology is thermistor-type micro-metering bolometer, can be divided into two kinds of vanadium oxide detector and non-crystalline silicon detectors according to the difference of thermistor material using.
Vanadium oxide technology is researched and developed successfully in the early 1990s in last century by the Honeywell company of the U.S., and amorphous silicon technology is is mainly researched and developed successfully in late nineteen nineties in last century by French CEA/LETI/LIR laboratory, mainly produced by French SOFRADIR and ULIS company at present, they are the suppliers of Chinese market.
The operation principle of micro-metering bolometer is that variations in temperature causes that material resistance changes, and utilizes object resistance to detect the sensitiveness of temperature simultaneously. Its kind is more, comprises VOx, a-Si and YBaCuO, wherein VOxWith a-Si be main product.
The structure of at present popular micro-metering bolometer all comprises optical resonator and micro-bridge structure conventionally, is substantially all the S type bridge type micro-metering bolometer that utilizes surperficial sacrificial layer technology to make. Wherein bridge deck structure is to be made up of passivation layer, infrared absorption layer, metal interconnected, thermally sensitive layer, structural support layers and heat insulation layer; Brachium pontis is realized support and the heat insulation to bridge floor. Reflecting layer, for the infra-red radiation that sees through bridge floor is reflected back to bridge floor, increases the absorptivity of infra-red radiation; The distance of micro-bridge structure and substrate is λ/4, and optical resonator is in order to increase the absorptivity to infra-red radiation. The detection sensitivity that how to improve micro-metering bolometer is the direction that this area scientific research personnel constantly makes great efforts always. On the other hand, at present also not about optical antenna structure applications is reported in the research of the application scheme of micro-metering bolometer.
Utility model content
The purpose of this utility model is to provide a kind of novel micro-bolometer based on infrared antenna, by antenna structure being introduced in micro-bolometer structure, so that micro-bolometer with higher detection sensitivity to be provided.
Embodiment of the present utility model realizes like this, a kind of novel micro-bolometer based on infrared antenna, comprise antenna structure, underlying structure and micro-bridge structure, wherein this underlying structure is positioned at micro-bridge structure below, and form optical resonator between this underlying structure and micro-bridge structure, this antenna structure has two arms that relatively extend, between these two arms, have gap, this optical resonator is arranged in this gap, the upper surface of these two arms and underlying structure is provided with infrared reflecting layer, and the upper surface of the upper surface of the infrared reflecting layer of described two arms and the infrared reflecting layer of underlying structure is in same plane.
According to an embodiment of the present utility model, the infrared reflecting layer of two arms of this micro-bolometer and the thickness of the infrared reflecting layer of underlying structure are all within the scope of 50-100nm.
According to another embodiment of the present utility model, the infrared reflecting layer of these two arms and the infrared reflecting layer of underlying structure are gold layer.
According to another embodiment of the present utility model, this antenna structure is dipole antenna or bowknot hole antenna.
According to another embodiment of the present utility model, the gap width of this antenna structure is 60-160nm.
According to another embodiment of the present utility model, this micro-bridge structure comprises stress regulating course, metal electrode layer, active layer and infrared absorption layer.
Micro-bolometer that the utility model provides, introduce antenna structure, two arms of this antenna structure are arranged at the both sides of optical resonator, this antenna structure can significantly strengthen infra-red intensity in the gap between two arms, and the optical resonator of micro-bolometer of the present utility model is sitting in this gap, by significantly improving micro-bolometer signal to noise ratio at ambient temperature to ultrared the reading that strengthens intensity (gathering), thereby strengthen detection sensitivity.
Brief description of the drawings
Fig. 1 is the top view of the micro-bolometer that comprises dipole antenna structure that provides of embodiment of the utility model;
Fig. 2 is the stereogram that comprises the micro-bolometer of bowknot hole antenna structure that another embodiment of the utility model provides;
Fig. 3 is the process chart of simultaneously preparing antenna structure of the present utility model and underlying structure;
Fig. 4 is the profile that does not contain micro-bolometer of antenna structure that the utility model embodiment provides;
Fig. 5 is the process chart of further processing in underlying structure after the technological process of Fig. 3;
Fig. 6-Figure 19 is the schematic cross-section of the product corresponding according to the each step in the micro-bolometer preparation technology who contains antenna structure of an embodiment of the utility model;
Figure 20 has shown the gap middle infrared (Mid-IR) strength-enhanced of dipole antenna of the present utility model and the functional relation of wavelength;
Figure 21 has shown the gap middle infrared (Mid-IR) strength-enhanced of bowknot of the present utility model hole antenna and the functional relation of wavelength.
Detailed description of the invention
In order to make the technical problems to be solved in the utility model, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the utility model is further elaborated. Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The utility model provides a kind of novel micro-bolometer based on infrared antenna, it comprises antenna structure, underlying structure and micro-bridge structure, wherein this underlying structure is positioned at micro-bridge structure below, and form optical resonator between this underlying structure and micro-bridge structure, this antenna structure has two arms that relatively extend but be not in contact with one another, front end at these two arms has gap, this optical resonator is arranged in this gap, the upper surface of these two arms and underlying structure is provided with infrared reflecting layer, and the upper surface of the upper surface of the infrared reflecting layer of described two arms and the infrared reflecting layer of underlying structure is in same plane.
Fig. 1 has shown according to the top view of micro-bolometer 1 of an embodiment of the present utility model. As shown in the figure, micro-bolometer 1 comprises antenna structure 12 and checkout gear 11, this antenna structure 12 is dipole antenna, wherein not shown for the body of supporting antenna structure, this checkout gear 11 comprises underlying structure and micro-bridge structure, has shown the relative position relation of underlying structure 111 and micro-bridge structure 112 in Fig. 4. As shown in Figure 1, this dipole antenna 12 has the arm of two rectangles, and the arm shape of these two rectangles is basic identical, between two arms, forms gap. According to preferred embodiment, the brachium of each arm is 200-2500nm, and arm is wide is 100-300nm, and gap width (minimum range of two arms, the namely most advanced and sophisticated distance of two arms) is 60-160nm, and the thickness of this antenna structure is 50-100nm. More preferably, the brachium of each arm is 400nm, and arm is wide is 100nm, and gap width is 60nm, and this antenna structure thickness is 50nm.
Fig. 2 shown according to the stereogram of micro-bolometer 1 of another embodiment of the utility model, and the antenna structure 12 in this embodiment is bowknot hole antenna, and checkout gear 11 is with embodiment illustrated in fig. 1 identical. As shown in Figure 2, two arms of this bowknot hole antenna 12 are triangle, and their tip is relative, and checkout gear 11 is arranged in the gap between these two tips. Preferably, the gap width of this bowknot hole antenna is 60-160nm, and the brachium (minimum range from triangular apex to bottom) of each arm is 200-2500nm, and the thickness of this antenna structure is 50-100nm. More preferably, the gap width of this bowknot hole antenna is 100nm, and the brachium of each arm is 200nm, and the thickness of this antenna structure is 100nm.
According to an embodiment of the present utility model, two arms and the underlying structure of this antenna structure all contain infrared reflecting layer, and their infrared reflecting layer forms simultaneously. That is to say, in making the infrared reflecting layer of underlying structure, can obtain antenna structure.
Fig. 3 has shown a kind of technological process of simultaneously preparing antenna structure of the present utility model and underlying structure. Particularly, the infrared reflecting layer of antenna structure of the present utility model and underlying structure can be prepared in the following manner: flow sequence refers to Fig. 3, first on substrate, apply the photosensitive layer that one deck 50-100nm is thick, this photosensitive layer is made up of the polymethyl methacrylate (PMMA) of 0.5-2%, then imports into EBL cavity, selects beam electronic current, low power focal length, selected good exposure position, exposes, and after exposure, develops. At 90 DEG C, dry subsequently, the gold layer of sputter 50-100nm is as infrared reflecting layer. Then utilize lift-off (peeling off) technique to carry out graphical treatment, can obtain antenna structure and the underlying structure of micro-bolometer of separation, and now two kinds of structures all contain infrared reflecting layer (gold layer), and the infrared reflecting layer forming is like this all in a plane.
Preferably, be also provided with protective layer on photosensitive layer and infrared reflecting layer, this protective layer can be by SiO2Make.
In superincumbent preparation process, used PMMA as photosensitive layer, advantage is that resolution ratio is high, and resolution ratio can reach 1nm left and right, also has contrast large simultaneously, is beneficial to and peels off, the advantage that price is low. This photosensitive layer is preferably about 60nm.
Fig. 4 has shown the profile of the checkout gear of micro-bolometer of the utility model embodiment, and namely micro-bolometer does not comprise the part of antenna structure. As shown in the figure, checkout gear 11 comprises underlying structure 111 and the micro-bridge structure 112 being located thereon.
Should be understood that Fig. 1 of the present utility model, Fig. 2 and Fig. 4 are only for setting forth the relative position relation of each structure of micro-bolometer of the present utility model, its dimension scale relation each other is also not used in and limits concrete proportionate relationship in kind. And underlying structure 111 and the micro-bridge structure 112 of the checkout gear 11 in Fig. 4 can be made up of sandwich construction, and Fig. 4 is only schematic diagram, can not be used for limiting the practical structures of this checkout gear 11. According in micro-bolometer 1 of the present utility model, be the unsettled micro-bridge structure 112 of part in infrared reflecting layer (not illustrating separately in Fig. 4) top of underlying structure 111, between this infrared reflecting layer and micro-bridge structure, be optical resonator.
According to an embodiment of the present utility model, this micro-bridge structure comprises stress regulating course, metal electrode layer, active layer and infrared absorption layer (specifically referring to Fig. 6 to Figure 19, as described below) from the bottom to top. Wherein, this stress regulating course is made up of SiNx; This metal electrode layer is made of titanium; This active layer is by VOxMake; This infrared absorption layer is by TiNxLayer is made.
According to preferred embodiment of the present utility model, this INFRARED ABSORPTION layer thickness be 8nm to 20nm, uniformity is 3%. Above-mentioned thickness is preferred for obtaining best infrared reflection rate, if too thick, can infrared reflection is complete, if too thin, its thermal capacitance is corresponding reducing also.
Preferably, the infrared absorption layer in this micro-bolometer is through lift-off technology graphical treatment.
According to an embodiment of the present utility model, this micro-bolometer also can comprise reading circuit (ROIC), is coated with BPSG (boron-phosphorosilicate glass) on this reading circuit, makes ROIC surfacing. This reading circuit is arranged in underlying structure, and is positioned at infrared reflecting layer below.
In the utility model embodiment, infrared absorption layer can be by silicon nitride, gold black (gold-black) or titanium nitride (TiNx) etc. make, preferably by titanium nitride (TiNx) make. The technique of making these materials is mainly film deposition art, and processing compatibility is better. Particularly, this TiNxThe Ti that layer comprises multivalence state. TiNxIn plated film, need to regulate thickness and square resistance, preferably, the square resistance of this infrared absorption layer is 350-450 Ω/, square resistance is that resistivity is divided by thickness, more preferably, the square resistance of this infrared absorption layer is 377-400 Ω/, and its thickness is that thickness is preferably 8nm to 20nm, now TiNxAbsorptivity be approximately 50%, optical resonator can make INFRARED ABSORPTION double. Absorptivity refers to that the incident radiation power that pixel absorbs accounts for the ratio that incides general power on photosurface. For different wavelength, absorptivity is different often.
Another object of the present utility model is to provide a kind of preparation method of micro-bolometer, the combination of Fig. 3 and Fig. 5 has shown this preparation method's whole technological process, the sectional view of concrete corresponding structure is asked for an interview Fig. 6 to Figure 19, wherein Fig. 5 carries out after the technique of Fig. 3 in underlying structure, and the method comprises the following steps:
(1) infrared reflecting layer is set, with reference to figure 6-Fig. 9, as mentioned above, its preparation process is: first on substrate 1111, apply the photosensitive layer 1112 that one deck 50-100nm is thick, this photosensitive layer 1112 is made up of the PMMA of 0.5-2%, then imports into EBL cavity, exposes and develops. At 90 DEG C, dry subsequently, the gold layer of sputter 50-100nm is as infrared reflecting layer 1113. Then utilize lift-off technique to carry out graphical treatment, can obtain antenna structure and the underlying structure of micro-bolometer of separation, optionally on photosensitive layer 1112 and infrared reflecting layer 1113, be respectively arranged with protective layer (referring to Fig. 9, wherein 1211 and 1111 be substrate, 1212 and 1112 are photosensitive layer, 1213 and 1113 are infrared reflecting layer, do not have the protective layer that labelled layer structure is non-functional, lower same);
(2) sacrifice layer 1121 (Figure 10) is set on the infrared reflecting layer of underlying structure, this sacrifice layer 1121 is made up of polysilicon or polyimides;
(3) stress regulating course 1122 (seeing Figure 11) is set, this stress regulating course 1122 is made up of SiNx;
(4) metal electrode layer is set, this metal electrode layer is made of titanium, and this step comprises: first deposit SiO2As the passivation layer (Figure 12) of titanium, then depositing metal titanium is also graphically made electrode (Figure 13 and Figure 14, not label of this electrode);
(5) active layer 1123 (Figure 15 and Figure 16) is set, this step comprises: the lower passivation layer of deposit active layer, this lower passivation layer is SiNxLayer; Sputter active layer 1123 also carries out annealing in process, and this active layer is VOxLayer, passivation layer (not label) in deposit first on this active layer, this on first passivation layer be SiO2Layer, carries out graphical treatment to this active layer, then passivation layer (not label) in deposit second, this on second passivation layer be SiNxLayer;
(6) infrared absorption layer 1124 (Figure 17) is set, this infrared absorption layer 1124 is TiNxLayer, and thickness be 8nm to 20nm, uniformity is 3%;
(7) etching discharge micro-bridge structure (Figure 18 and Figure 19), has shown in Figure 18 and the situation of preparation etching seam for to stitch the structure after sacrifice layer 1121 is etched away completely by etching, has discharged micro-bridge structure in Figure 19.
The technological process of above-mentioned steps (1) is described in detail with reference to figure 3 above. Fig. 5 has shown the technological process of above-mentioned steps (2) to (7), and these techniques are all to carry out in underlying structure, namely do not relate to the further processing of the antenna structure to micro-bolometer of the present utility model.
Sacrifice layer 1121 in above-mentioned steps (2) is preferably made up of polyimides, and wherein polyimides can adopt dry process to remove, and dry process has been simplified the processing technology of micro-bolometer. Dry etching can be realized zero corrosion to silicon nitride supporting construction, and simultaneously its oxide layer to reading circuit and the corrosion of metal level are also zero. The silicon nitride layer that dry process can make to make supporting construction is thinner, and this is very meaningful to reducing the size of picture dot.
The etching of above-mentioned steps (7) refers to the wide etching seam (Figure 18) of etching 1-3 μ m around microbridge and beam, discharges micro-structural and discharges micro-bridge structure, and it is stitched and utilized hydrazine (H by etching2NNH2) etching sacrificial layer, form microcavity, discharge thus micro-bridge structure (Figure 19).
According to preparation method of the present utility model, this INFRARED ABSORPTION layer thickness is preferably 8nm to 20nm, and uniformity is 3%. The square resistance of this infrared absorption layer is preferably 350-450 Ω/.
In the prior art, several failure modes common in the process of the micro-bolometer structure of vanadium oxide are: microbridge face adheres to substrate after corrosion sacrifice layer, causes adhesion failure; The residual stress of microbridge face is excessive, causes structure to produce afterwards very large warpage in release, is easy to cause brace summer generation fracture failure; Bridge floor lamination layer structure in dispose procedure is peeled off inefficacy.
For overcoming the problems referred to above, prevent that microbridge and substrate from adhering to, preparation method of the present utility model has carried out following improvement: after micro-bridge structure discharges, in above-mentioned steps (7) afterwards, use deionized water to clean, then substrate (comprising optical resonator and micro-bridge structure) is put into the IPA vapor of drier and purified (remove electrostatic charge and reduce capillary force), finally put into again air ambient, can effectively reduce like this generation of adhesion. Dry in the air compression ring border of 80 degrees Celsius the micro-structural that causes 60% is adhered to if be placed directly in.
Further, in preparation method of the present utility model, pass through to control the 3rd layer of silicon nitride, it is the residual-stress value that the thickness of above-mentioned steps (6) middle infrared absorption layer can effectively reduce bridge floor, prevent micro-bridge structure generation warpage, improve like this accuracy detecting, extended service life.
On the other hand, the inefficacy of peeling off conventionally occurring is mainly because the adhesion strength between bridge floor composite bed is little, and the size of adhesion strength is relevant with the deposition technology of film. If directly above apply photoresist and vanadium oxide carried out graphically at vanadium oxide layer (being the active layer in step (5)), by the adhesion strength reducing between the silicon nitride (second on passivation layer) of vanadium oxide and deposit below, this causes after micro-bridge structure discharges, and compound microbridge will be peeled off inefficacy. Tracing it to its cause, is mainly to cause because vanadium oxide is subject to the pollution of photoetching glue residue, and therefore, in order to prevent polluting, preparation method of the present utility model is provided with passivation layer on first, at sputter vanadium oxide and annealing deposit layer of silicon dioxide separation layer afterwards. But in the time of etching sacrificial layer, silica can not well be protected vanadium oxide layer, after structure discharges, the resistance coefficient of vanadium oxide layer will raise, and its reason is mainly that the lewis' acid in etching agent sees through the impact of silica on vanadium dioxide. Therefore utilize again PECVD deposition techniques one deck silicon nitride to protect. Can effectively strengthen like this adhesion strength between composite bed, prevent that structure from peeling off inefficacy.
The application's technical scheme merges gapped tool antenna structure to micro-bolometer, and this antenna structure can be brought into play significant infrared ray humidification at gap location. Preparation method of the present utility model is described in detail in conjunction with Fig. 1 to Fig. 5 and Fig. 6 to Figure 19 by specific embodiment below
Embodiment mono-has the preparation of micro-bolometer of dipole antenna
1. on substrate, apply the PMMA of 60nm, form photosensitive layer, be then passed in EBL cavity, select beam electronic current, low power focal length, selected good exposure position, exposes, and after exposure, develops. At 90 DEG C, dry subsequently, the gold layer of sputter 60nm is as infrared reflecting layer. Then utilize lift-off technique to carry out graphical treatment. As shown in Figure 1, the brachium of gained antenna is 2500nm, and arm is wide is 300nm, and gap width is 160nm.
In the underlying structure separating with antenna the polysilicon of deposit 1300nm as sacrifice layer.
3. the thick S of meteorological deposit (LPCVD) one deck 80nm of low pressure chemical on the sacrifice layer of gainediNx(stress regulating course) regulates stress.
4. the S of deposit one deck 170nm on stress regulating courseiO2As the passivation layer of titanium. The Titanium that deposit 100nm is thick is also patterned into electrode, the thicker S of LPCVD one deck 200nmiNxAs VOxThe passivation layer of layer.
5. the thick VO of reactive sputtering one deck 110nm on passivation layerxAs the active layer of micro-bolometer and carry out annealing in process. The S of deposit one deck 56nm againiO2As VOxFirst on passivation layer.
6. use the VO of the graphical gained of ion beam etching technologyx, the S of deposit one deck 300nmiNxAs VOxSecond on passivation layer.
7. the infrared absorption layer TiN of deposit 377 Ω/ on passivation layer on secondx, its thickness is 10nm, and utilizes lift-off technology graphical.
8. the wide etching seam of etching 2 μ m around microbridge and beam.
9. stitch and utilize hydrazine (H by etching2NNH2) etching sacrificial layer, form microcavity, discharge micro-bridge structure.
10. use deionized water to clean, then substrate (comprising optical resonator and micro-bridge structure) is put into the IPA vapor of drier and purified (remove electrostatic charge and reduce capillary force), finally put into again air ambient.
Embodiment bis-has the preparation of micro-bolometer of bowknot hole antenna
1. on substrate, apply the PMMA of 60nm, form photosensitive layer, be then passed in EBL cavity, select beam electronic current, low power focal length, selected good exposure position, exposes, and after exposure, develops. At 90 DEG C, dry subsequently, the gold layer of sputter 60nm is as infrared reflecting layer. Then utilize lift-off technique to carry out graphical treatment. As shown in Figure 2, the antenna of gained is two triangles that tip is relative, and the thickness of antenna is 100nm, and the distance (gap width) between two triangle tips is 100nm.
In the underlying structure separating with antenna the polyimides of deposit 2000nm as sacrifice layer.
3. the thick S of meteorological deposit (LPCVD) one deck 100nm of low pressure chemical on the sacrifice layer of gainediNx(stress regulating course) regulates stress.
4. the S of deposit one deck 170nm on stress regulating courseiO2As the passivation layer of titanium. The Titanium that deposit 100nm is thick is also patterned into electrode, the thicker S of LPCVD one deck 200nmiNxAs VOxThe passivation layer of layer.
5. the thick VO of reactive sputtering one deck 110nm on passivation layerxAs the active layer of micro-bolometer and carry out annealing in process. The S of deposit one deck 56nm againiO2As VOxFirst on passivation layer.
6. use the VO of the graphical gained of ion beam etching technologyx, the S of deposit one deck 300nmiNxAs VOxSecond on passivation layer.
7. the infrared absorption layer T of deposit 400 Ω/ on passivation layer on secondiN, its thickness is 15nm, and utilizes lift-off technology graphical.
8. the wide etching seam of etching 2 μ m around microbridge and beam.
9. stitch and utilize hydrazine (H by etching2NNH2) etching sacrificial layer, form microcavity, discharge micro-bridge structure.
10. use deionized water to clean, then substrate (comprising optical resonator and micro-bridge structure) is put into the IPA vapor of drier and purified (remove electrostatic charge and reduce capillary force), finally put into again air ambient.
Assemble ultrared effect in order to verify the antenna structure that the application provides, the relation of the IR wavelength of the gap middle infrared (Mid-IR) strength-enhanced of utility model people to two kinds of antenna structures (dipole antenna and bowknot hole antenna) and incident has been carried out analog computation, and result respectively as shown in Figure 20 and Figure 21. Figure 20 has shown the strengthened situation of gap middle infrared (Mid-IR) of dipole antenna, as shown in the figure, at wavelength 2 μ m places, ultrared strength-enhanced reaches peak value, at the gap of antenna middle infrared (Mid-IR) strength increase about 400 times, this represent, the in the situation that of ceteris paribus, be the incident infrared of 2 μ m for wavelength, add micro-bolometer sensitivity of dipole antenna can improve 400 times.
Figure 21 has shown the strengthened situation of gap middle infrared (Mid-IR) of bowknot hole antenna, as shown in the figure, at the wavelength place of about 8 μ m, the gap middle infrared (Mid-IR) strength-enhanced of bowknot hole antenna reaches peak value, is about 20,000, this can be understood as, the in the situation that of ceteris paribus, add micro-bolometer sensitivity in the time that incident infrared wavelength is 8 μ m of bowknot hole antenna can improve about 20,000 times.
The application, by adding antenna structure, is significantly improved the sensitivity of micro-bolometer.
A kind of novel micro-bolometer tool based on infrared antenna of the present utility model is of use in many ways, and is particularly useful for infrared night vision product, as infrared viewing device etc.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any amendments of doing within spirit of the present utility model and principle, be equal to replace and improved, within all should being included in protection domain of the present utility model.
Claims (6)
1. a novel micro-bolometer based on infrared antenna, comprise antenna structure, underlying structure and micro-bridge structure, wherein said underlying structure is positioned at described micro-bridge structure below, and form optical resonator between described underlying structure and micro-bridge structure, described antenna structure has two arms that extend toward each other, between two arms, have gap, described optical resonator is arranged in described gap, the upper surface of described two arms and underlying structure is provided with infrared reflecting layer, and the upper surface of the upper surface of the infrared reflecting layer of described two arms and the infrared reflecting layer of described underlying structure is in same plane.
2. a kind of novel micro-bolometer based on infrared antenna according to claim 1, is characterized in that, the thickness of the infrared reflecting layer of described two arms and the infrared reflecting layer of described underlying structure is within the scope of 50-100nm.
3. a kind of novel micro-bolometer based on infrared antenna according to claim 1, is characterized in that, the infrared reflecting layer of described two arms and the infrared reflecting layer of described underlying structure are gold layer.
4. a kind of novel micro-bolometer based on infrared antenna according to claim 1, is characterized in that, described antenna structure is dipole antenna or bowknot hole antenna.
5. a kind of novel micro-bolometer based on infrared antenna according to claim 1, is characterized in that, the gap width of described antenna structure is 60-160nm.
6. a kind of novel micro-bolometer based on infrared antenna according to claim 1, is characterized in that, described micro-bridge structure comprises stress regulating course, metal electrode layer, active layer and infrared absorption layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520907888.7U CN205246224U (en) | 2015-11-13 | 2015-11-13 | Novel little bolometer based on infrared antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520907888.7U CN205246224U (en) | 2015-11-13 | 2015-11-13 | Novel little bolometer based on infrared antenna |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205246224U true CN205246224U (en) | 2016-05-18 |
Family
ID=55945296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520907888.7U Active CN205246224U (en) | 2015-11-13 | 2015-11-13 | Novel little bolometer based on infrared antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205246224U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371966A (en) * | 2015-11-13 | 2016-03-02 | 南方科技大学 | Novel bolometer and manufacturing method |
| CN110081987A (en) * | 2019-04-24 | 2019-08-02 | 上海交通大学 | Utilize the method for molecule adsorption desorption process choosing detection different wave length infrared light |
-
2015
- 2015-11-13 CN CN201520907888.7U patent/CN205246224U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371966A (en) * | 2015-11-13 | 2016-03-02 | 南方科技大学 | Novel bolometer and manufacturing method |
| CN105371966B (en) * | 2015-11-13 | 2019-01-11 | 南方科技大学 | A kind of novel radiation bolometer and manufacturing method |
| CN110081987A (en) * | 2019-04-24 | 2019-08-02 | 上海交通大学 | Utilize the method for molecule adsorption desorption process choosing detection different wave length infrared light |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8513606B2 (en) | THz wave detector | |
| US7268349B2 (en) | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure | |
| CN106352989B (en) | A kind of production method and structure of non-refrigerated infrared focal plane probe microbridge | |
| JP4677044B2 (en) | Dual band imaging device having a visible or SWIR detector combined with an uncooled LWIR detector | |
| CN101713688B (en) | MEMS non-refrigerated two-band infrared detector and preparation method thereof | |
| CN103193190B (en) | A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof | |
| US7667202B2 (en) | Multilayer-structured bolometer and method of fabricating the same | |
| JP5636787B2 (en) | Thermal photodetector, thermal photodetector, and electronic device | |
| CN103759838A (en) | Infrared detector of microbridge structure and method for manufacturing same | |
| CN103715307A (en) | Non-refrigeration infrared detector and preparation method thereof | |
| CN106784165B (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| CN102226721A (en) | Non-refrigerated infrared detection focal plane device | |
| CN106115604B (en) | Terahertz micro-metering bolometer based on metamaterial structure and preparation method thereof | |
| CN102998725B (en) | Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film | |
| CN205246224U (en) | Novel little bolometer based on infrared antenna | |
| CN102874735A (en) | Two-material micro-cantilever, electromagnetic radiation detector and detection method | |
| CN110943138B (en) | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method | |
| CN205940776U (en) | Micro -bolometer | |
| US20170082497A1 (en) | Systems and methods for enhanced bolometer response | |
| Zhou et al. | A compact polarization-integrated long wavelength infrared focal plane array based on InAs/GaSb superlattice | |
| CN113447148B (en) | Infrared focal plane detector | |
| CN202066596U (en) | Infrared detector and multiband uncooled infrared focal plane | |
| CN103855238B (en) | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors | |
| CN105371966A (en) | Novel bolometer and manufacturing method | |
| CN106672891A (en) | Double-layer uncooled infrared detector structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |