CN205205219U - Evaporate device that sputter mixes - Google Patents
Evaporate device that sputter mixes Download PDFInfo
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- CN205205219U CN205205219U CN201520698039.5U CN201520698039U CN205205219U CN 205205219 U CN205205219 U CN 205205219U CN 201520698039 U CN201520698039 U CN 201520698039U CN 205205219 U CN205205219 U CN 205205219U
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Abstract
The utility model provides an evaporate device that sputter mixes, exocoel (1) is the closed cabin body, exocoel (1) left end is equipped with from inside to outside in proper order receives cylinder (8), supporting wheel (6) and blowing cylinder (5), the utility model discloses make the in -process of manufacturing of compliance subassembly (CIGSOLED etc. ) all go on in vacuous environment, avoid receiving the influence of the aqueous vapor in the atmosphere, because the utility model discloses a mixture of evaporating the sputter, so reduce the required area of production line, one set of vacuum system of coating by vaporization and sputter sharing has reduced equipment manufacturing cost moreover, the device structure that its modular design made is easier with the maintenance, moreover because linking up of production process has also improved the efficiency of production.
Description
Technical field
The utility model relates to a kind of device, particularly relates to a kind of device steaming sputter mixing.
Background technology
The huge number of solar cell, and CIGS (copper-indium-galliun-selenium) thin-film solar cells has high conversion efficiency and development potentiality and is attracted attention, the most high conversion efficiency of current CIGS (copper-indium-galliun-selenium) thin-film solar cells created by U.S.'s Renewable Energy Laboratory (NREL), and its efficiency reaches 20%.CIGS (copper-indium-galliun-selenium) thin-film solar cells be developed so far its unit construction roughly part by top electrode (Al/Ni, Ag), optical window layer (AZO low-resistance and ZnO high resistant), buffer layer (CdS, ZnOS, ZnMgO), absorption layer (CIGS), lower electrode (Mo/NaMo), barrier layer (Ti/Cr/SiO2/NiCr) and substrate (GLASS, SS, PI) formed, in single rete, the parameter allotment of each material composition ratio, film crystal structure, processing procedure mode and various factorss such as optimizing processing procedure are the challenge on it is prepared, in addition, also need to consider that each rete is stacked into the matching of assembly, the many factors such as to influence each other between each Film preparation mode and processing procedure, especially CIGS (copper-indium-galliun-selenium) is shown for extremely responsive for component influences various process parameter from pertinent literature, more increase the difficulty of CIGS (copper-indium-galliun-selenium) thin-film solar cells in preparation, also make technology door relatively improve simultaneously, a kind of solar cell that technical difficulty is larger is thought at international photovoltaic circle.General upper electrode layer and optical window layer can adopt vacuum splashing and plating mode, and buffer layer adopts chemical waters mode, and compared in each rete of unit construction, absorption layer preparation method is divided into two large classes: 1. vacuum process, comprise common evaporation and sputter precursors and selenizing processing procedure; 2. antivacuum processing procedure, comprises plating and coating etc.; And lower electrode (Mo/MoNa) and barrier layer generally adopt the mode of sputter.Wherein use that to prepare buffer layer major cause absorption layer surface made by the current stage in chemical bath mode very thick, need reach complete batch of buffer layer by immersion method is overlying on absorption layer, but, in whole production CIGS solar cell process, immersion method processing procedure mode is used to have several restriction: 1. do not add for continuous production; 2. large-area uniformity is wayward; 3. need in immersion method making processes to consume large water gaging; 4. immersion method uses chemical solvents subsequent treatment cost high.If the flattening surface of absorption layer just can not be able to be adopted waters method to do buffer layer, avoid the discontinuity of producing to enhance productivity and yield, and reduce production cost.Therefore traditional mode of production, when making CIGS solar components, rete must repeatedly be exposed under vacuum, and the impact being subject to external environment aqueous vapor reduces film quality, simultaneously due to repeatedly enter vacuum system and repeatedly heating and cooling also had a strong impact on production efficiency.
Summary of the invention
The purpose of this utility model is to provide a kind of device steaming sputter mixing, manufacturing in process of flexible components (CIGS/OLED etc.) is all carried out in the environment of vacuum, avoid the impact by the aqueous vapor in air, because the utility model is the mixing of steaming sputter, so the area required for reduction production line, and evaporation and sputter share a set of vacuum system, reduce device fabrication cost, the maintenance of equipment that its modular design makes and maintenance are more prone to, and due to the coherent efficiency also improving production of production process.
The utility model realizes like this, it comprises exocoel, vacuum extractor, heating control apparatus, monitoring device, blowing cylinder, supporting-point roller, orientation cylinder, receive cylinder, the linear evaporation chamber of vacuum, vacuum magnetic control sputtering chamber, described exocoel side connects monitoring device, vacuum extractor and heating control apparatus, it is characterized in that, described exocoel is enclosed cabin body, described exocoel left end is provided with receipts cylinder from inside to outside successively, supporting-point roller, supporting-point roller, supporting-point roller, supporting-point roller and blowing cylinder, the centre of described exocoel right-hand member is provided with orientation cylinder, several cavitys are provided with in exocoel between described receipts cylinder and orientation cylinder, described inside cavities is provided with the linear evaporation chamber of vacuum, vacuum magnetic control sputtering chamber is provided with outside described cavity, described vacuum is provided with supporting-point roller outside linear evaporation chamber, supporting-point roller is provided with inside described vacuum magnetic control sputtering chamber.
Described exocoel adopts stainless steel, and it must bear and be less than 5x10
-6the negative pressure of below torr.
Described blowing cylinder material is stainless steel, and diameter is 200-350mm.
Described support roller material is stainless steel, and diameter is 50-200mm.
Described orientation cylinder material is stainless steel, and diameter is 50-200mm.
Described rewinding cylinder material is stainless steel, and diameter is 200-350mm.
Described vacuum linear evaporation cavity material is stainless steel, and its body includes linear vapor deposition source; It is 50-150mm insulation layer that described linear vapor deposition source skin is provided with thickness, and described insulation layer is graphite or molybdenum; Described linear vapor deposition source includes heater coil, several crucibles and several voltage stabilizing separations.
Described vacuum magnetic control sputtering chamber material is stainless steel, and its body includes magnetic control sputtering plating source, and it is provided with two target position; Described target is planar target or column type target.
The power supply of the preferred RF of sputter power supply, the DC in described magnetic control sputtering plating source, pulsed D C or intermediate frequency.
Technique effect of the present utility model is: the utility model makes manufacturing in process of flexible components (CIGS/OLED etc.) all carry out in the environment of vacuum, avoid the impact by the aqueous vapor in air, because the utility model is the mixing of steaming sputter, so the area required for reduction production line, and evaporation and sputter share a set of vacuum system, reduce device fabrication cost, the maintenance of equipment that its modular design makes and maintenance are more prone to, and due to the coherent efficiency also improving production of production process.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In the drawings, 1, exocoel 2, vacuum extractor 3, heating control apparatus 4, monitoring device 5, blowing cylinder 6, supporting-point roller 7, orientation cylinder 8, receive cylinder 9, the linear evaporation chamber 10 of vacuum, vacuum magnetic control sputtering chamber.
Embodiment
Composition graphs 1 illustrates the utility model, described exocoel (1) side connects monitoring device (4), vacuum extractor (2) and heating control apparatus (3), described exocoel (1) is enclosed cabin body, described exocoel (1) left end is provided with from inside to outside successively receives cylinder (8), supporting-point roller (6), supporting-point roller (6), supporting-point roller (6), supporting-point roller (6) and blowing cylinder (5), the centre of described exocoel (1) right-hand member is provided with orientation cylinder (7), several cavitys are provided with in exocoel (1) between described receipts cylinder (8) and orientation cylinder (7), described inside cavities is provided with the linear evaporation chamber (9) of vacuum, vacuum magnetic control sputtering chamber (10) is provided with outside described cavity, linear evaporation chamber (9) outside of described vacuum is provided with supporting-point roller (6), described vacuum magnetic control sputtering chamber (10) inner side is provided with supporting-point roller (6).
Described exocoel (1) adopts stainless steel, and it must bear and be less than 5x10
-6the negative pressure of below torr.
Described blowing cylinder (5) material is stainless steel, and diameter is 200-350mm.
Described support roller (6) material is stainless steel, and diameter is 50-200mm.
Described orientation cylinder (7) material is stainless steel, and diameter is 50-200mm.
Described receipts cylinder (8) material is stainless steel, and diameter is 200-350mm.
Described vacuum linear evaporation chamber (9) material is stainless steel, and its body includes linear vapor deposition source; It is 50-150mm insulation layer that described linear vapor deposition source skin is provided with thickness, and described insulation layer is graphite or molybdenum; Described linear vapor deposition source includes heater coil, several crucibles and several voltage stabilizing separations.
Described vacuum magnetic control sputtering chamber (10) material is stainless steel, and its body includes magnetic control sputtering plating source, and it is provided with two target position; Described target is planar target or column type target.
The power supply of the preferred RF of sputter power supply, the DC in described magnetic control sputtering plating source, pulsed D C or intermediate frequency.
Described vacuum extractor (2), comprises one and slightly takes out mechanical pump and one group of high vacuum diffusion pump, vacuum cavity can be evacuated to and be less than 5x10
-6the negative pressure of below torr.
Described heating control apparatus (3), has base material heating to more than 500 DEG C and by the ability of the various heating materials of evaporation to more than 1100 DEG C.
Described monitoring and detection device (4), can real-time measurement thickness or efficiency of conversion.
For the making of pliability CIGS thin film solar cell, before plated film, pliability stainless steel or pliability glass substrate part need to carry out pre-treatment, comprise destatic, ion beam bombardment, heat de-airing process etc.
The flexible base plate entire volume cleaned out is arranged on above blowing cylinder (5), its fabric width is 30-80cm, one end is elongated through several supporting-point roller (6), orientation wheel (7) is then fixed on receives above cylinder (8), then exocoel (1) all chambeies door is closed, be evacuated to the vacuum being less than 5x10-6torr, receive cylinder (8) and pull base material with the speed of 25cm/min, first first through the vacuum magnetic control sputtering chamber (10) of a plating barrier layer, barrier layer is based on (Cr/Ti/NiCr/TiN/SiO2), material purity 99.95%, through throttling valve by pass into argon gas control vacuum magnetic control sputtering chamber (10) operating pressure be 5 × 10
-3torr, then plated film is carried out, substrate temperature 25-400 DEG C can be controlled during plated film, then base material is again through the vacuum magnetic control sputtering chamber (10) of a plating lower electrode, lower electrode is based on MoNa/Mo, material purity 99.95%, through throttling valve by pass into argon gas control vacuum magnetic control sputtering chamber (10) operating pressure be 5 × 10
-3torr, then plated film is carried out, substrate temperature 25-400 DEG C can be controlled during plated film, then flexible substrate linearly steams chamber (9) through the vacuum of more than 5, each vacuum linearly steams chamber (9) by heating control apparatus (3) by more than base plate heating to 500 DEG C, each linear vapor deposition source places evaporation material containing at least plural crucible, and each placement material crucible can be heated to more than 1100 DEG C, and its vacuum tightness is 5x10
-6torr, evaporation InGaSe, CuSe, CuSe, InGaSe and CuInGaSe respectively, material purity 99.995%, complete the multistage evaporation of CIGS thin film, after having plated CIGS thin film, base material is advanced past orientation cylinder (7), then enters the vacuum magnetic control sputtering chamber (10) of buffer layer, through throttling valve by pass into argon gas control vacuum magnetic control sputtering chamber (10) operating pressure be 5 × 10
-3torr, then plated film is carried out, buffer layer is preferably with ZnMgO, CdS and ZnOS, material purity 99.95%, base material does not reheat, after completing buffer layer plated film, the vacuum plating district of base material progress light inlet window layer, through throttling valve by pass into argon gas control vacuum magnetic control sputtering chamber (10) operating pressure be 3 × 10
-3torr, then carry out plated film, base material does not reheat, and preferably (ZnO/AZO/IZO/ITO) etc., material purity 99.95%, after completing plated film, base material enters rewinding bucket and winds up optical window layer, completes the process of whole plated film.
Above-described embodiment is only be described preferred implementation of the present utility model; not scope of the present utility model is limited; under the prerequisite not departing from the utility model design spirit; the various distortion that those of ordinary skill in the art make the technical solution of the utility model and improvement, all should fall in protection domain that the utility model claims determine.
Claims (8)
1. steam a device for sputter mixing, it comprises exocoel, vacuum extractor, heating control apparatus, monitoring device, blowing cylinder, supporting-point roller, orientation cylinder, receive cylinder, the linear evaporation chamber of vacuum, vacuum magnetic control sputtering chamber, described exocoel (1) side connects monitoring device (4), vacuum extractor (2) and heating control apparatus (3), is characterized in that, described exocoel (1) is enclosed cabin body, and described exocoel (1) left end is provided with from inside to outside successively receives cylinder (8), supporting-point roller (6), supporting-point roller (6), supporting-point roller (6), supporting-point roller (6) and blowing cylinder (5), the centre of described exocoel (1) right-hand member is provided with orientation cylinder (7), several cavitys are provided with in exocoel (1) between described receipts cylinder (8) and orientation cylinder (7), described inside cavities is provided with the linear evaporation chamber (9) of vacuum, vacuum magnetic control sputtering chamber (10) is provided with outside described cavity, linear evaporation chamber (9) outside of described vacuum is provided with supporting-point roller (6), and described vacuum magnetic control sputtering chamber (10) inner side is provided with supporting-point roller (6).
2. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described exocoel (1) adopts stainless steel, and it must bear and be less than 5x10
-6the negative pressure of below torr.
3. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described blowing cylinder (5) material is stainless steel, and diameter is 200-350mm.
4. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described orientation cylinder (7) material is stainless steel, and diameter is 50-200mm.
5. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described receipts cylinder (8) material is stainless steel, and diameter is 200-350mm.
6. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described vacuum linear evaporation chamber (9) material is stainless steel, and its body includes linear vapor deposition source; It is 50-150mm insulation layer that described linear vapor deposition source skin is provided with thickness, and described insulation layer is graphite or molybdenum; Described linear vapor deposition source includes heater coil, several crucibles and several voltage stabilizing separations.
7. a kind of device steaming sputter mixing according to claim 1, it is characterized in that, described vacuum magnetic control sputtering chamber (10) material is stainless steel, and its body includes magnetic control sputtering plating source, it is provided with two target position, and described target position is planar target or column type target.
8. a kind of device steaming sputter mixing according to claim 7, is characterized in that, the sputter power supply in described magnetic control sputtering plating source is the power supply of RF, DC, pulsed D C or intermediate frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520698039.5U CN205205219U (en) | 2015-09-10 | 2015-09-10 | Evaporate device that sputter mixes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520698039.5U CN205205219U (en) | 2015-09-10 | 2015-09-10 | Evaporate device that sputter mixes |
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| Publication Number | Publication Date |
|---|---|
| CN205205219U true CN205205219U (en) | 2016-05-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520698039.5U Active CN205205219U (en) | 2015-09-10 | 2015-09-10 | Evaporate device that sputter mixes |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118028761A (en) * | 2024-04-12 | 2024-05-14 | 山东省宝丰镀膜有限公司 | Winding type magnetic control cathode main roller evaporation film forming system |
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2015
- 2015-09-10 CN CN201520698039.5U patent/CN205205219U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118028761A (en) * | 2024-04-12 | 2024-05-14 | 山东省宝丰镀膜有限公司 | Winding type magnetic control cathode main roller evaporation film forming system |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200520 Address after: 341000 building 6, standard workshop, north area, Hong Kong Industrial Park, 168 Xiangjiang Avenue, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Chuangfa Photoelectric Technology Co., Ltd Address before: 341000 standard factory building, North Zone, Hongkong Industrial Park, Ganzhou economic and Technological Development Zone, Jiangxi, 6 Patentee before: YANCHUANG APPLIED MATERIALS (GANZHOU) INC., Ltd. |