CN205177848U - High voltage power device with special pressure ring - Google Patents
High voltage power device with special pressure ring Download PDFInfo
- Publication number
- CN205177848U CN205177848U CN201520890629.8U CN201520890629U CN205177848U CN 205177848 U CN205177848 U CN 205177848U CN 201520890629 U CN201520890629 U CN 201520890629U CN 205177848 U CN205177848 U CN 205177848U
- Authority
- CN
- China
- Prior art keywords
- pressure ring
- power device
- high voltage
- voltage power
- termination environment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
The utility model relates to a high voltage power device with special pressure ring, it includes workspace (1) and terminal area (2), substrate (3) upper surface of workspace (1) and terminal area (2) is equipped with epitaxial layer (4), terminal area (2) from pressure ring slot (21) have been seted up downwards to the upper surface of epitaxial layer (4), the degree of depth of pressure ring slot (21) is less than the thickness of epitaxial layer (4), its inside packing has lightly doped P type gaN material and fills the back the upper surface of P type gaN material with the upper surface parallel and level of epitaxial layer (4), and simultaneously, pack in pressure ring slot (21) P type gaN material upper surface has still covered one deck edge passivation layer (5). The utility model has advantages of simple and reasonable structure design, use steadily, reliable, in the breakdown voltage who effectively improves the device, can effectively reduce the area of terminal area, the cost is reduced.
Description
Technical field
The utility model relates to technical field of semiconductor device, particularly a kind of high voltage power device with special pressure ring.
Background technology
Along with developing rapidly of power electronic technology, high voltage power device is also towards the future development of Large Copacity, high frequency, energy-efficient, low cost.Improve puncture voltage then one of research direction becoming people of device.Desirable device electric breakdown strength refers to that pn knot or metal-semiconductor become the situation of parallel plane knot, but, due to practical devices and the impact of some factor in the technological process of production, also there is sideways diffusion in impurity, so the terminal profile of knot is bending while carrying out longitudinal diffusion.For high voltage power device, when adding reversed bias voltage to knot, being very high close to field intensity when puncturing near knot, exceeding much than other regions in the electric field strength at knot terminal bend place, also more easily puncturing.In order to address this problem, around main knot, add pressure ring, applying reversed bias voltage when giving knot is, the depletion region of main knot is along outwardly side expansion, when depletion region expands to withstand voltage loops, main knot knee electric field strength does not also reach critical breakdown strength, and namely main knot also can not puncture.Along with the increase of reverse biased, main knot and pressure ring are binded up one's hair raw break-through, join together in depletion region, and like this, depletion region radius of curvature increases, and it is weakened that the electric field in main knot knee gathers effect, and therefore puncture voltage is improved.
As shown in Figure 4, traditional power device comprises service area 05 and termination environment 06, the heavy doping N+ substrate 01 of this service area 05 and termination environment 06 is provided with light dope N-epitaxial loayer 02, this light dope N-epitaxial loayer 02 establishes plane pressure ring 03, this light dope N-epitaxial loayer 02 is provided with SiO2 insulating barrier 04 being located at plane pressure ring 03 upper surface, known traditional pressure ring technology, be plane pressure ring, namely in Si substrate, implanting impurity ion forms withstand voltage loops, disperse the Electric Field Distribution of main knot, weaken the electric field accumulation phenomena in main knot knee, thus improve puncture voltage; Around main knot, add pressure ring, certainly will will increase the area of chip, and require more and more higher to puncture voltage along with power device, pressure ring number also can correspondingly increase, this just causes terminal pressure ring area occupied to increase, and the area of whole chip also increases thereupon, improves cost.
Given this, mention in patent CN201180050935 and a kind ofly have for high-voltage applications the trench-dmos devices improving terminal structure, comprise Semiconductor substrate, this Semiconductor substrate has active area and termination environment.This substrate has the first conduction type.Terminal trenches is arranged in termination environment, and extends in the specific range at the edge of Semiconductor substrate from the border of educating source region.Doped region has the second conduction type, is arranged in the substrate below terminal trenches.The sidewall adjacent with border forms mos gate pole.This doped region extends from the sidewall of the distant place of direction terminal trenches a part for the mos gate pole separated with border.Terminal structure oxide skin(coating) is formed in terminal trenches, and covers a part for mos gate pole, and extends to the edge of substrate.The back surface of Semiconductor substrate is formed the first conductive layer.Form the second conductive layer at the expose portion of mos gate pole, top, active area, and the second conductive layer extends to cover terminal structure oxide skin(coating) at least partially.Although this invention termination environment also adopts groove-shaped and at beneath trenches doped p-type impurity, but it is at trench sidewall deposition grid, dielectric layer deposition, metal level in groove, this device making technics more complicated, cost is higher, and the withstand voltage properties of device cannot obtain Reliable guarantee.
Terminal structure of a kind of mesohigh slot type power device and preparation method thereof is mentioned in patent CN201310086262, the terminal area of its terminal structure has a groove at least, all there is surface knot the both sides of groove, be that N-shaped injects knot near the side of active area, side away from active area is that p-type injects knot, has filler in groove.Although this invention termination environment also adopts groove-shaped, but what fill in groove is silica, silicon nitride, silicon oxynitride or polysilicon, these materials when withstand voltage identical, comparing other materials then needs terminal area larger, not only manufacture craft relative complex, and withstand voltage properties is general.
A kind of super junction high-voltage power device structure is mentioned in another patent CN201210009184, it includes source region and termination environment, termination environment arranges the epitaxial loayer of the first conductivity type material on substrate layer, epitaxial loayer forms compound buffer layer, the second semiconductor region that the first semiconductor region containing the first conductivity type material formation be alternately arranged in compound buffer layer and the second conductivity type material are formed; The well region of the second conduction type is positioned at the surface of the second semiconductor region, be between two the first semiconductor regions or last first semiconductor region and cut-off ring between.Although it is withstand voltage that this invention adopts super-junction structure to improve, its termination environment is plane, and therefore withstand voltage properties is poor, and terminal area occupied is larger, and cost is also higher.
In sum, be necessary to do perfect further to prior art.
Summary of the invention
In order to solve the problem mentioned in above background technology, it is simple, reasonable that the utility model provides a kind of structural design, use stable, reliable, while the puncture voltage effectively improving device, the area of termination environment can be effectively reduced, reduce cost, improve the high voltage power device with special pressure ring of withstand voltage properties.
The technical solution of the utility model is as follows:
The above-mentioned high voltage power device with special pressure ring, comprises service area (1) and termination environment (2); Substrate (3) upper surface of described service area (1) and termination environment (2) is provided with epitaxial loayer (4); Described termination environment (2) offers pressure ring groove (21) downwards from the upper surface of described epitaxial loayer (4); The degree of depth of described pressure ring groove (21) is less than the thickness of described epitaxial loayer (4), and its inside is filled with lightly doped P type GaN material and the upper surface of described P type GaN material after filling is concordant with the upper surface of described epitaxial loayer (4); Meanwhile, the described P type GaN material upper surface of filling in described pressure ring groove (21) is also coated with the boundary-passivated layer of one deck (5).
The described high voltage power device with special pressure ring, wherein: what described boundary-passivated layer (5) adopted is SiN dielectric layer.
The described high voltage power device with special pressure ring, wherein: described pressure ring groove (21) is the epitaxial loayer (4) being opened in described termination environment (2) by lithographic etch process.
The described high voltage power device with special pressure ring, wherein: described high voltage power device comprises insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET and fast recovery diode FRD; The service area of described insulated gate bipolar transistor IGBT comprises gate regions G and emitter region E.
The described high voltage power device with special pressure ring, wherein: the central region of described high voltage power device is service area (1), being positioned at region around, described service area (1) is described termination environment (2).
Beneficial effect:
The utility model has the high-voltage power device structure simplicity of design, rationally of special pressure ring, use stable, reliable, while the puncture voltage effectively improving device, the area of termination environment can be effectively reduced, and then whole chip area is reduced, reduce cost.
Service area of the present utility model is identical with the service area of traditional high voltage power semiconductor device, difference part is, termination environment of the present utility model pressure ring adopts groove-shaped, P type GaN material is filled in groove, GaN groove pressure ring replaces conventional planar pressure ring, reduce the width shared by pressure ring, reduce chip area, reduce cost, the withstand voltage properties of GaN material is ten times of traditional Si material, therefore while reduction terminal pressure ring area occupied, turn improve the withstand voltage properties of power device.
Accompanying drawing explanation
Fig. 1 is the cutaway view that the utility model has the high voltage power device of special pressure ring;
Fig. 2 is the vertical view that the utility model has the high voltage power device of special pressure ring;
Fig. 3 is the workspace architecture profile of insulated gate bipolar transistor IGBT;
Fig. 4 is traditional power unit structure cutaway view.
Embodiment
As shown in Figure 1, 2, the utility model has the high voltage power device of special pressure ring, can be the devices such as IGBT, MOSFET, FRD, comprises service area 1 and termination environment 2.
This service area 1 is positioned at the central region of power device, and the region around service area 1 is termination environment 2; Wherein, take power device IGBT, Fig. 3 as the service area 1 of IGBT, comprise gate regions G and emitter region E.
The substrate 3 of this service area 1 and termination environment 2 is heavy doping N+ silicon substrate structure, and the epitaxial loayer 4 of this service area 1 and termination environment 2 is light dope N-epitaxial layer structure and is located at the upper surface of heavy doping N+ substrate 3; The thickness of this epitaxial loayer 4 is 50-150um.
This termination environment 2 offers pressure ring groove 21 downwards from the upper surface of epitaxial loayer 4; Wherein, this pressure ring groove 21 offers formation by lithographic etch process in termination environment 2, and its degree of depth is less than the thickness of epitaxial loayer 4.
Lightly doped P type GaN material is filled with in this pressure ring groove 21, wherein, the gash depth position 5-15um of this pressure ring groove 21, its inner GaN material upper surface of filling is concordant with the upper surface of epitaxial loayer 4, meanwhile, the GaN material upper surface of filling in this pressure ring groove 21 is also coated with the boundary-passivated layer 5 of one deck, and what this boundary-passivated layer 5 adopted is SiN dielectric layer, and it instead of traditional Si O
2insulating barrier, SiN dielectric layer compares SiO
2insulating barrier has more stable surface chemistry performance, plays better protective effect.
Wherein, pressure ring groove 21 of the present utility model is different from the plane pressure ring 03 of the conventional high-tension power device in Fig. 4, the utility model fills lightly doped P type GaN material in pressure ring groove 21, because the voltage endurance capability of GaN material is than traditional Si material high ten times, therefore, pressure ring groove 21 of the present utility model is tied than traditional plane pressure ring 03 junction depth; Meanwhile, compare traditional plane pressure ring 03, the quantity of pressure ring groove 21 of the present utility model obviously reduces and area shared by pressure ring also obviously reduces, and then the area of whole high voltage power device is reduced, and reduces cost.
Moreover can find out from the contrast of Fig. 4 and Fig. 1, Fig. 2, pressure ring groove 21 quantity that termination environment 22 area occupied of Fig. 1 is significantly less than Fig. 4 conventional power devices termination environment 06, Fig. 2 is obviously less than Fig. 4.Again due to the high resistance to pressure of GaN material, the reverse BV of device is improved greatly.
The utility model structural design is simple, reasonable, uses stable, reliable, while the puncture voltage effectively improving device, can effectively reduce the area of termination environment, reduce cost, be suitable for large-scale propagation and employment.
The above; it is only the utility model preferred embodiment; not restriction the utility model being made to any other form, and any amendment done according to technical spirit of the present utility model or equivalent variations, still belong to the utility model scope required for protection.
Claims (5)
1. there is a high voltage power device for special pressure ring, comprise service area (1) and termination environment (2); Substrate (3) upper surface of described service area (1) and termination environment (2) is provided with epitaxial loayer (4); It is characterized in that: described termination environment (2) offer pressure ring groove (21) downwards from the upper surface of described epitaxial loayer (4); The degree of depth of described pressure ring groove (21) is less than the thickness of described epitaxial loayer (4), and its inside is filled with lightly doped P type GaN material and the upper surface of described P type GaN material after filling is concordant with the upper surface of described epitaxial loayer (4); Meanwhile, the described P type GaN material upper surface of filling in described pressure ring groove (21) is also coated with the boundary-passivated layer of one deck (5).
2. there is the high voltage power device of special pressure ring as claimed in claim 1, it is characterized in that: what described boundary-passivated layer (5) adopted is SiN dielectric layer.
3. there is the high voltage power device of special pressure ring as claimed in claim 1, it is characterized in that: described pressure ring groove (21) is the epitaxial loayer (4) being opened in described termination environment (2) by lithographic etch process.
4. there is the high voltage power device of special pressure ring as claimed in claim 1, it is characterized in that: described high voltage power device comprises insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET and fast recovery diode FRD.
5. the high voltage power device with special pressure ring as described in as arbitrary in Claims 1-4, it is characterized in that: the central region of described high voltage power device is service area (1), being positioned at region around, described service area (1) is described termination environment (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520890629.8U CN205177848U (en) | 2015-07-16 | 2015-11-10 | High voltage power device with special pressure ring |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520513869 | 2015-07-16 | ||
| CN2015205138696 | 2015-07-16 | ||
| CN201520890629.8U CN205177848U (en) | 2015-07-16 | 2015-11-10 | High voltage power device with special pressure ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205177848U true CN205177848U (en) | 2016-04-20 |
Family
ID=55741796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520890629.8U Expired - Fee Related CN205177848U (en) | 2015-07-16 | 2015-11-10 | High voltage power device with special pressure ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205177848U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356398A (en) * | 2015-07-16 | 2017-01-25 | 张家港意发功率半导体有限公司 | High-voltage power device with special voltage withstanding ring |
| CN107369620A (en) * | 2016-05-12 | 2017-11-21 | 北大方正集团有限公司 | Knot terminal expansion structure preparation method and knot terminal expansion structure, VDMOS power devices |
| CN108615677A (en) * | 2016-12-09 | 2018-10-02 | 全球能源互联网研究院 | A kind of metal electrode preparation method and plane grid-type compression joint type IGBT |
-
2015
- 2015-11-10 CN CN201520890629.8U patent/CN205177848U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356398A (en) * | 2015-07-16 | 2017-01-25 | 张家港意发功率半导体有限公司 | High-voltage power device with special voltage withstanding ring |
| CN107369620A (en) * | 2016-05-12 | 2017-11-21 | 北大方正集团有限公司 | Knot terminal expansion structure preparation method and knot terminal expansion structure, VDMOS power devices |
| CN108615677A (en) * | 2016-12-09 | 2018-10-02 | 全球能源互联网研究院 | A kind of metal electrode preparation method and plane grid-type compression joint type IGBT |
| CN108615677B (en) * | 2016-12-09 | 2021-04-16 | 全球能源互联网研究院 | Metal electrode preparation method and planar gate type crimping IGBT |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9786736B2 (en) | Power semiconductor device | |
| CN101645448B (en) | Rectifier with pn clamp regions under trenches | |
| US8294235B2 (en) | Edge termination with improved breakdown voltage | |
| US20220406929A1 (en) | Silicon carbide mosfet device and cell structure thereof | |
| CN108292677B (en) | Folded form terminal with internal field board | |
| US8748973B2 (en) | Super junction transistor and fabrication method thereof | |
| CN102956680A (en) | Semiconductor device and method for forming semiconductor device | |
| CN108701617B (en) | Method for manufacturing semiconductor device | |
| KR200474421Y1 (en) | Trench structure of semiconductor device | |
| TW201248851A (en) | New and improved edge termination configurations for high voltage semiconductor power devices | |
| CN103887331A (en) | High-voltage IGBT (Insulated Gate Bipolar Transistor) device VLD terminal and manufacturing method thereof | |
| CN105448997B (en) | Improve the superjunction MOS device and its manufacturing method of reverse recovery characteristic and avalanche capacity | |
| CN205177848U (en) | High voltage power device with special pressure ring | |
| CN104103691A (en) | Semiconductor device with compensation regions | |
| CN107221561A (en) | A kind of lamination Electric Field Modulated high-voltage MOSFET structure and preparation method thereof | |
| CN204130542U (en) | Power semiconductor | |
| CN106356401A (en) | Field limiting ring terminal structure for power semiconductor device | |
| CN105826360B (en) | Groove-shaped half super junction power device and preparation method thereof | |
| CN104319284A (en) | Semiconductor device structure and manufacturing method thereof | |
| CN202205755U (en) | Plane power MOSFET device having super junction structure | |
| US20120267708A1 (en) | Termination structure for power devices | |
| CN106356398A (en) | High-voltage power device with special voltage withstanding ring | |
| CN105304687A (en) | End connection device for nanotube MOSFET | |
| CN108054195A (en) | Semiconductor power device and preparation method thereof | |
| CN107994067A (en) | The terminal structure and preparation method thereof of semiconductor power device, semiconductor power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20211110 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |