CN205140532U - Isotope battery of horizontal groove structure - Google Patents
Isotope battery of horizontal groove structure Download PDFInfo
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- CN205140532U CN205140532U CN201520912516.3U CN201520912516U CN205140532U CN 205140532 U CN205140532 U CN 205140532U CN 201520912516 U CN201520912516 U CN 201520912516U CN 205140532 U CN205140532 U CN 205140532U
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- ohmic contact
- doped region
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Abstract
The utility model discloses an isotope battery of horizontal groove structure, aim at: the efficiency of the energy conversion is improved and packaging density, being favorable to the integration, the practicality is strong, and is novel in design reasonable, the convenient realization, the utility model discloses a technical scheme do: include the substrate that comprises the siC substrate, substrate upper portion is provided with N type siC epitaxial layer, be equipped with a plurality of step on the N type siC epitaxial layer, be equipped with the slot between the adjacent step, the top intermediate position of a plurality of step is provided with N type siC ohmic contact doped region, is provided with N type ohmic contact electrode on the N type siC ohmic contact doped region, be provided with alpha radiation source on the step top position of N type ohmic contact electrode both sides, slot bottom between the adjacent step is provided with P type siC ohmic contact doped region, and the upper portion of P type siC ohmic contact doped region is provided with P type ohmic contact electrode.
Description
Technical field
The utility model relates to semiconductor devices and semiconductor process techniques field, especially relates to a kind of isotope battery of lateral trench structure.
Background technology
Isotope battery adopts semiconductor diode as inverting element, and the charged particle ionisation effect in a semiconductor material adopting radioisotope decays to produce converts core radiant to electric energy.In order to obtain the output power of enough high and long-term stability to accelerate to advance it practical, need to be optimized design from inverting element and radioactive source two aspects simultaneously.
In radioactive source, as energy source, its electron flux density is lower mostly to adopt low energy radiator beta-ray (as 63Ni, particle average energy 17.1KeV) at present; Simultaneously due to the self absorption effect of radioactive source, the meaning that the simple intensity by raising radioactive source promotes output power is limited.If adopt high energy radiator beta-ray (as 147Pm etc.), because particle range is comparatively dark, bring difficulty to effective absorption of the raw charge carrier of irradiation.The angle of collecting from ionization energy is said, αsource is more satisfactory as the energy.For 241Am, particle energy high (5.5MeV) but range moderate (in Si material about 28 μm), and mainly with the mode sedimentary energy in the material of ionization, if be used as the output power that energy source effectively can improve battery; But α particle easily causes the irradiation damage of semiconductor devices, reduce the serviceable life of inverting element.
With the semiconductor material with wide forbidden band that SiC, GaN are representative, there is the advantages such as energy gap is large, capability of resistance to radiation is strong, the Built-in potential of the isotope battery inverting element made with it is high, leakage current is little, can obtain the open-circuit voltage higher than silicon based cells and energy conversion efficiency in theory.Meanwhile, wide-band gap material and the superior radioresistance characteristic of device, also make to adopt αsource to become possibility as the isotope battery energy.Compared to SiC Schottky diode, SiCPIN diode has the advantages such as Built-in potential is high, leakage current is little, has that open-circuit voltage is high, conversion efficiency advantages of higher with the isotope battery that it is made.
But also there is a lot of problems in the research of PIN type isotope battery at present, particularly the isotope battery of report mostly adopts vertical structure at present, namely two electrodes of diode lay respectively in substrate and epitaxial surface, and adopt low-doped thick epitaxial layer fully to absorb the raw charge carrier of irradiation.This structural manufacturing process is comparatively simple, but and is not suitable for αsource, this is because according to radiation volt theory, the irradiation in depletion region and in a neighbouring minority diffusion length is given birth to charge carrier and can be collected.For SiC diode, even if adopt low-doped epitaxial loayer, width of depletion region is 1 ~ 2um only, and in SiC material, minority diffusion length is only a few um.Because alpha partical range is comparatively dark and energy concentrates release near range, therefore the raw charge carrier of the irradiation of material depths is difficult to abundant absorption.Meanwhile, thick epitaxial loayer also can cause devices in series resistance comparatively large, thus affects conversion efficiency.Therefore, development of new device architecture, the raw charge carrier of irradiation of abundant absorbing material depths, being promote battery conversion efficiency, is the key advancing αsource isotope battery practical as early as possible.
Utility model content
In order to solve the problems of the prior art, the utility model proposes one and being conducive to improving energy conversion efficiency and packaging density, being conducive to integrated, the isotope battery of practical lateral trench structure.
In order to solve the problems of the prior art, the technical scheme that the utility model adopts is: comprise the substrate be made up of SiC substrate, substrate top is provided with N-type SiC epitaxial layer, described N-type SiC epitaxial layer is provided with several steps, groove is provided with between adjacent step, the crown center position of several steps described is all injected and is formed with N-type SiC ohmic contact doped region, upper end, N-type SiC ohmic contact doped region is provided with N-type Ohm contact electrode, and the step-shaped top position of described N-type Ohm contact electrode both sides is provided with αsource; Channel bottom between described adjacent step is provided with P type SiC ohmic contact doped region, and the top of P type SiC ohmic contact doped region is provided with P type Ohm contact electrode.
Bench height in described N-type SiC epitaxial layer is 5 μm ~ 15 μm, and step width is 10 μm ~ 20 μm, and the spacing between step is 2 μm ~ 5 μm.
The integral thickness of described N-type SiC epitaxial layer is 10 μm ~ 30 μm.
Described P type Ohm contact electrode shape is identical with described P type SiC ohmic contact doped region shape.
Described P type SiC ohmic contact doped region is all identical with step spacing with the width of described P type Ohm contact electrode.
Described P type Ohm contact electrode comprises the Ni layer and Pt layer formation that set gradually from below to up, and the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
The shape of described N-type Ohm contact electrode is identical with described N-type SiC ohmic contact doped region shape.
The width of described N-type SiC ohmic contact doped region and described N-type Ohm contact electrode is 0.5 μm ~ 2 μm.
Described N-type Ohm contact electrode comprises the Ni layer and Pt layer that set gradually from below to up, and the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
Compared with prior art, the utility model is provided with several steps in N-type SiC epitaxial layer, groove is provided with between adjacent step, P type SiC ohmic contact doped region is arranged on channel bottom, P type Ohm contact electrode is arranged on the top of P type SiC ohmic contact doped region, utilize groove structure that P district is deep into I layer depth place, effectively can strengthen the absorption to the raw charge carrier of irradiation near alpha partical range, promote output power and energy conversion efficiency, in traditional architectures because main by the raw charge carrier of depletion region collection irradiation, the loss of projectile energy can be caused in Ohm contact electrode and Ohmic contact doped region, the utility model mainly collects the raw charge carrier of irradiation by the differential gap within the scope of a minority diffusion length near P type Ohmic contact doped region, no longer rely on the area of P type Ohmic contact doped region, thus effectively decrease the energy loss of incident particle, improve energy conversion efficiency.
For the device of vertical structure, the doping content in I district can affect multiple parameters such as open-circuit voltage, sensitive volume thickness, resistance in series, is difficult to compromise, and transversary collects the raw charge carrier of irradiation owing to have employed differential gap, spacing between P type Ohm contact electrode and N-type Ohm contact electrode is determined by minority diffusion length, therefore open-circuit voltage can be improved by the method for the doping content suitably improving I district N-type SiC epitaxial layer, reduce resistance in series, and make the design of device more flexible, also can effectively promote irradiation tolerance limit simultaneously, this is more great for adopting the isotope battery meaning of αsource, the utility model battery have employed lateral device structure, due to the impact without substrate, the resistance in series that easy acquisition is lower than vertical structure, thus raising fill factor, curve factor, simultaneously can reduce the volume of battery by organic semiconductor device, improve packaging density, being conducive to this minisize nuclear battery is integrated in MEMS micro-system, device architecture of the present utility model, so responsive unlike vertical structure to the thickness of P type Ohm contact electrode metal layer thickness and P type SiC ohmic contact doped region, be easy to technologic realization.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Wherein, 1-substrate; 2-N type SiC epitaxial layer; 3-N type SiC ohmic contact doped region; 4-P type SiC ohmic contact doped region; 5-N type Ohm contact electrode; 6-P type Ohm contact electrode; 7-αsource.
Embodiment
Below in conjunction with the utility model is further explained the explanation of specific embodiment and Figure of description.
See Fig. 1, the utility model comprises the substrate 1 be made up of SiC substrate, substrate 1 top is provided with N-type SiC epitaxial layer 2, N-type SiC epitaxial layer 2 is provided with several steps, groove is provided with between adjacent step, bench height is 5 μm ~ 15 μm, step width is 10 μm ~ 20 μm, spacing between step is 2 μm ~ 5 μm, the integral thickness of N-type SiC epitaxial layer 2 is 10 μm ~ 30 μm, the crown center position of several steps is all injected and is formed with N-type SiC ohmic contact doped region 3, upper end, N-type SiC ohmic contact doped region 3 flushes with step top, upper end, N-type SiC ohmic contact doped region 3 is provided with N-type Ohm contact electrode 5, the shape of N-type Ohm contact electrode 5 is identical with N-type SiC ohmic contact doped region 3 shape, the width of N-type SiC ohmic contact doped region 3 and N-type Ohm contact electrode 5 is 0.5 μm ~ 2 μm, N-type Ohm contact electrode 5 comprises the Ni layer and Pt layer that set gradually from below to up, the thickness of Ni layer is 200nm ~ 400nm, the thickness of Pt layer is 50nm ~ 200nm.The step-shaped top position of N-type Ohm contact electrode 5 both sides is provided with αsource 7.It is identical with P type SiC ohmic contact doped region 4 shape that the top that channel bottom between adjacent step is provided with type SiC ohmic contact doped region, P type SiC ohmic contact doped region 4, P 4 is provided with P type Ohm contact electrode 6, P type Ohm contact electrode 6 shape.P type SiC ohmic contact doped region 4 is all identical with step spacing with the width of P type Ohm contact electrode 6, P type Ohm contact electrode 6 comprises the Ni layer and Pt layer that set gradually from below to up, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm.
Manufacture method of the present utility model, comprises the following steps:
Step one, provide the substrate 1 be made up of SiC substrate;
Step 2, employing chemical vapour deposition technique are 1 × 10 in the upper surface Epitaxial growth doping content of substrate 1
16cm
-3~ 5 × 10
17cm
-3, thickness is the N-type SiC epitaxial layer 2 of 10 μm ~ 30 μm;
Step 3, pass through SF
6gas, adopting reactive ion dry etching method to etch in N-type SiC epitaxial layer 2 is highly 5 μm ~ 15 μm, and width is 10 μm ~ 20 μm, and spacing is several steps of 2 μm ~ 5 μm, establishes groove between adjacent step;
It is 1 × 10 that step 4, employing ion implantation form doping content at the step top of N-type SiC epitaxial layer 2
18cm
-3~ 1 × 10
19cm
-3n-type SiC ohmic contact doped region 3;
It is 1 × 10 that step 5, the channel bottom of employing ion implantation between the step of N-type SiC epitaxial layer 2 form doping content
18cm
-3~ 1 × 10
19cm
-3p type SiC ohmic contact doped region 4, and carry out the thermal annealing that temperature is 1650 DEG C ~ 1700 DEG C under an ar atmosphere;
Step 6, above N-type SiC ohmic contact doped region 3 deposit Ni layer and Pt layer successively, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm;
Step 7, above P type SiC ohmic contact doped region 4 deposit Ni layer and Pt layer successively, the thickness of Ni layer is the thickness of 200nm ~ 400nm, Pt layer is 50nm ~ 200nm;
Step 8, at N
2carry out the thermal annealing 2 minutes that temperature is 950 DEG C ~ 1050 DEG C under atmosphere, form on the top of N-type SiC ohmic contact doped region 3 the N-type Ohm contact electrode 5 be made up of Ni layer and Pt layer; The P type Ohm contact electrode 6 be made up of Ni layer and Pt layer is formed on the top of P type SiC ohmic contact doped region 4;
Step 9, remove N-type Ohm contact electrode 5 at two ends, step top, only retain middle N-type Ohm contact electrode 5, and αsource 7 is set in the region of step top removing N-type Ohm contact electrode 5, namely obtain the silit PIN type isotope battery of employing αsource as shown in Figure 1.
Traditional structure is because main by the raw charge carrier of depletion region collection irradiation, and the loss of projectile energy can be caused in Ohm contact electrode and Ohmic contact doped region; The utility model mainly collects the raw charge carrier of irradiation by the differential gap within the scope of a minority diffusion length near P type Ohmic contact doped region, no longer rely on the area of P type Ohmic contact doped region, thus effectively decrease the energy loss of incident particle, improve energy conversion efficiency.The utility model adopts groove structure that P district is deep into I layer depth place, effectively can strengthen the absorption to the raw charge carrier of irradiation near alpha partical range, promote output power and energy conversion efficiency.
For the device of vertical structure, the doping content in I district can affect multiple parameters such as open-circuit voltage, sensitive volume thickness, resistance in series, is difficult to compromise; And transversary collects the raw charge carrier of irradiation owing to have employed differential gap, spacing between P type Ohm contact electrode and N-type Ohm contact electrode is determined by minority diffusion length, therefore open-circuit voltage can be improved by the method for the doping content suitably improving I district N-type SiC epitaxial layer, reduce resistance in series, and make the design of device more flexible.Also can effectively promote irradiation tolerance limit, this is more great for adopting the isotope battery meaning of αsource simultaneously.The utility model have employed lateral device structure, due to the impact without substrate, the resistance in series that easy acquisition is lower than vertical structure, thus raising fill factor, curve factor, simultaneously can reduce the volume of battery by organic semiconductor device, improve packaging density, be conducive to this minisize nuclear battery and be integrated in MEMS micro-system.Device architecture of the present utility model, so responsive unlike vertical structure to the thickness of P type Ohm contact electrode metal layer thickness and P type SiC ohmic contact doped region, be easy to technologic realization.
In sum, the utility model is rationally novel in design, and it is convenient to realize, and be conducive to the energy conversion efficiency and the packaging density that improve the isotope battery adopting αsource, be conducive to integrated, practical, application value is high.
The above is only illustrate specific explanations of the present utility model; not the utility model is imposed any restrictions; every above embodiment is done according to the utility model technical spirit any simple modification, change and equivalent structure change, all still belong in the protection domain of technical solutions of the utility model.
Claims (9)
1. the isotope battery of a lateral trench structure, it is characterized in that, comprise the substrate (1) be made up of SiC substrate, substrate (1) top is provided with N-type SiC epitaxial layer (2), described N-type SiC epitaxial layer (2) is provided with several steps, groove is provided with between adjacent step, the crown center position of several steps described is injected with N-type SiC ohmic contact doped region (3), N-type SiC ohmic contact doped region (3) upper end is provided with N-type Ohm contact electrode (5), the step-shaped top position of described N-type Ohm contact electrode (5) both sides is provided with αsource (7), channel bottom between described adjacent step is provided with P type SiC ohmic contact doped region (4), and the top of P type SiC ohmic contact doped region (4) is provided with P type Ohm contact electrode (6).
2. the isotope battery of a kind of lateral trench structure according to claim 1, it is characterized in that, bench height on described N-type SiC epitaxial layer (2) is 5 μm ~ 15 μm, and step width is 10 μm ~ 20 μm, and the spacing between step is 2 μm ~ 5 μm.
3. the isotope battery of a kind of lateral trench structure according to claim 2, is characterized in that, the integral thickness of described N-type SiC epitaxial layer (2) is 10 μm ~ 30 μm.
4. the isotope battery of a kind of lateral trench structure according to claim 1, is characterized in that, described P type Ohm contact electrode (6) shape is identical with described P type SiC ohmic contact doped region (4) shape.
5. the isotope battery of a kind of lateral trench structure according to claim 4, is characterized in that, described P type SiC ohmic contact doped region (4) is all identical with step spacing with the width of described P type Ohm contact electrode (6).
6. the isotope battery of a kind of lateral trench structure according to claim 5, it is characterized in that, described P type Ohm contact electrode (6) comprises the Ni layer and Pt layer formation that set gradually from below to up, the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
7. the isotope battery of a kind of lateral trench structure according to claim 1, is characterized in that, the shape of described N-type Ohm contact electrode (5) is identical with described N-type SiC ohmic contact doped region (3) shape.
8. the isotope battery of a kind of lateral trench structure according to claim 7, is characterized in that, the width of described N-type SiC ohmic contact doped region (3) and described N-type Ohm contact electrode (5) is 0.5 μm ~ 2 μm.
9. the isotope battery of a kind of lateral trench structure according to claim 8, it is characterized in that, described N-type Ohm contact electrode (5) comprises the Ni layer and Pt layer that set gradually from below to up, the thickness of described Ni layer is 200nm ~ 400nm, and the thickness of described Pt layer is 50nm ~ 200nm.
Priority Applications (1)
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CN201520912516.3U CN205140532U (en) | 2015-11-16 | 2015-11-16 | Isotope battery of horizontal groove structure |
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CN201520912516.3U CN205140532U (en) | 2015-11-16 | 2015-11-16 | Isotope battery of horizontal groove structure |
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CN205140532U true CN205140532U (en) | 2016-04-06 |
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GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20161116 |