CN205103408U - Miniaturized radiation detector of high performance - Google Patents
Miniaturized radiation detector of high performance Download PDFInfo
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- CN205103408U CN205103408U CN201520836528.2U CN201520836528U CN205103408U CN 205103408 U CN205103408 U CN 205103408U CN 201520836528 U CN201520836528 U CN 201520836528U CN 205103408 U CN205103408 U CN 205103408U
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- radiation detector
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- high performance
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- probe
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Abstract
The utility model relates to a communication device specifically is miniaturized radiation detector of high performance. Miniaturized radiation detector of high performance, including the shell, there is the window at the shell top, installs the disk in the shell, installs a pair of P channel enhancement mode MOS field effect transistor on the disk, and the disk is connecting resistance, wiring stem stem and probe respectively, and the probe is pluged with molten metal under the shell bottom has outside being located the shell bottom. The utility model provides a miniaturized radiation detector of high performance, the volume that makes radiation detector dwindle to original 20%, and volume and weight are obviously dwindled, and square portability is with low costs.
Description
Technical field
The utility model relates to a kind of communication device, is specially high performance mini radiation detector.
Background technology
The principle of work of radiation detector is when particle is by detector, and detector produces ionization or excitation with regard to absorption one portion or whole energy, if particle is charged, and the orbital electron direct interaction of its electromagnetic field and material Atom.Radiation detector is exactly with suitable probing medium as the material with particle effect, the ionization produced in probing medium by particle or excite, and changes detectable electric signal into, amplifies, process through electronic circuit, just can carry out recording and analyzing.
Radiation detector provides the mode of information, is mainly divided into two classes: a class is after particle incides detector, is just given the receptible information of people's sense organ through certain disposal.After another kind of detector receives incident particle, provide corresponding electric signal immediately, amplify through electronic circuit, process, just can carry out recording and analyzing, this Equations of The Second Kind can be referred to as electric explorer, electric explorer is the appearance of most widely used radiation detector, this class detector, result in appearance and the development of this new subdiscipline of nuclear electronics.
Existing radiation detector mainly or continuity uses gas ionization detector, scintillation detector.Ubiquity detection accuracy is inadequate, and the shortcoming that detectivity is little, particularly cannot meet detection demand to the mineral matter resource having labyrinth to form.In addition the volume ratio of existing detector is comparatively large, is not suitable for conventional use, and price is generally higher promotes there is obstruction to market.
Utility model content
For above-mentioned technical matters, the utility model provides high performance mini radiation detector, and concrete technical scheme is:
High performance mini radiation detector, comprises shell, and cover top portion has form, be provided with disk in shell, disk be provided with a pair P-channel enhancement type metal-oxide-semiconductor field effect transistor, disk is contact resistance, wiring stem stem and probe respectively, probe is positioned at outside outer casing bottom, plugs with molten metal under outer casing bottom has.
Adopt P-channel enhancement type metal-oxide-semiconductor field effect transistor, i.e. interdigital grid thick gate oxygen structure P-channel enhancement type metal-oxide-semiconductor field effect transistor structure, detector has good detection sensitivity.In order to reach higher detection sensitivity, this circuit have employed the grid structure of large breadth length ratio, and the breadth length ratio increasing grid contributes to the deviation reducing actual measurement physical quantity and threshold voltage in application.In addition, the breadth length ratio increasing gate electrode also facilitates the zero temperature coefficient point needing to find in device application under fixed bias current.
Adopt symmetrical structure, be namely made up of a pair identical, that performance is symmetrical P-channel enhancement type metal-oxide-semiconductor field effect transistor of structure on same disk, this design to tubular construction, make the electrical quantity of two groups of devices and temperature coefficient and threshold voltage all similar.
P-channel enhancement type metal-oxide-semiconductor field effect transistor is after being subject to high-energy ray gamma-radiation, electron hole pair is produced in grid silicon dioxide layer, under positive electric field effect, the hole of positively charged capture by the silicon dioxide hole trap of the side, interface near silicon and silicon dioxide, and the electronics of the electron-hole centering produced or by the effusion of silicon-aluminium interface, or capture by silicon dioxide electron trap.Due to P-channel enhancement type metal-oxide-semiconductor field effect transistor threshold voltage with there is corresponding linear changing relation between irradiation intensity, thus can make it for the preparation of portable radiant dosemeter.
Adopt the design rule of large breadth length ratio 6 microns of alum gate PMOS techniques, gate oxide thickness is 1 micron, adopts ion implantation technique adjustment channel doping density simultaneously, the radiosensitivity of circuit is adjusted to maximum rating.
The high performance mini radiation detector that the utility model provides, make the volume-diminished of radiation detector to original 20%, volume and weight obviously reduces, and square portability, cost is low.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Accompanying drawings embodiment of the present utility model.
As shown in Figure 1, high performance mini radiation detector, comprise shell 1, form 2 is arranged at shell 1 top, be provided with disk 7 in shell 1, disk 7 be provided with a pair P-channel enhancement type metal-oxide-semiconductor field effect transistor 5, disk 7 is contact resistance 3, wiring stem stem 4 and probe 8 respectively, probe 8 is positioned at outside bottom shell 1, plugs with molten metal 6 under having bottom shell 1.
P-channel enhancement type metal-oxide-semiconductor field effect transistor 5 adopts the design rule of large breadth length ratio 6 microns of alum gate PMOS techniques, and gate oxide thickness is 1 micron, adopts ion implantation technique adjustment channel doping density simultaneously, the radiosensitivity of circuit is adjusted to maximum rating.
Claims (1)
1. high performance mini radiation detector, comprise shell (1), form (2) is arranged at shell (1) top, it is characterized in that: in described shell (1), disk (7) is installed, disk (7) is provided with a pair P-channel enhancement type metal-oxide-semiconductor field effect transistor (5), disk (7) is contact resistance (3), wiring stem stem (4) and probe (8) respectively, and probe (8) is positioned at outside shell (1) bottom, plugs with molten metal (6) under shell (1) bottom has.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520836528.2U CN205103408U (en) | 2015-10-27 | 2015-10-27 | Miniaturized radiation detector of high performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520836528.2U CN205103408U (en) | 2015-10-27 | 2015-10-27 | Miniaturized radiation detector of high performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205103408U true CN205103408U (en) | 2016-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520836528.2U Expired - Fee Related CN205103408U (en) | 2015-10-27 | 2015-10-27 | Miniaturized radiation detector of high performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205103408U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113484902A (en) * | 2021-07-24 | 2021-10-08 | 中国科学院新疆理化技术研究所 | PMOS dosimeter zero temperature coefficient measuring and inhibiting method |
-
2015
- 2015-10-27 CN CN201520836528.2U patent/CN205103408U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113484902A (en) * | 2021-07-24 | 2021-10-08 | 中国科学院新疆理化技术研究所 | PMOS dosimeter zero temperature coefficient measuring and inhibiting method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160323 Termination date: 20211027 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |