CN205092240U - Temperature protection circuit - Google Patents

Temperature protection circuit Download PDF

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Publication number
CN205092240U
CN205092240U CN201520844227.4U CN201520844227U CN205092240U CN 205092240 U CN205092240 U CN 205092240U CN 201520844227 U CN201520844227 U CN 201520844227U CN 205092240 U CN205092240 U CN 205092240U
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CN
China
Prior art keywords
resistance
npn
npn pipe
pipe
nmos tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520844227.4U
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Chinese (zh)
Inventor
陶霞菲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Kuanfu Technology Co Ltd
Original Assignee
Hangzhou Kuanfu Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Kuanfu Technology Co Ltd filed Critical Hangzhou Kuanfu Technology Co Ltd
Priority to CN201520844227.4U priority Critical patent/CN205092240U/en
Application granted granted Critical
Publication of CN205092240U publication Critical patent/CN205092240U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a TEMPERATURE PROTECTION CIRCUIT, including first resistance, second resistance, a NMOS pipe, third resistance and a NPN pipe, a termination power voltage VCC of first resistance, the one end of another termination second resistance and the drain electrode of NMOS pipe and the base that a NPN managed, the base of the one end of the first resistance of a termination of second resistance and the drain electrode of NMOS pipe and NPN pipe, other end ground connection, the grid of NMOS pipe connects the one end of third resistance and the collecting electrode of NPN pipe, and the drain electrode connects one end and the one end of second resistance and the base of NPN pipe of first resistance, source electrode ground connection. The utility model discloses first resistance and the 2nd resistive voltage divider obtain the base voltage that a voltage was managed as a NPN, and when the temperature rose, a NPN piping expert made output VOUT become the low level, normal during operation, NPN pipe does not switch on, and output VOUT is the high level.

Description

Temperature protection circuit
Technical field
The utility model relates to integrated circuit technique, refers more particularly to temperature protection circuit.
Background technology
In integrated circuits, can produce error message when temperature is too high, in order to avoid such phenomenon occurs, meeting set temperature protective circuit, is used for turning off corresponding output.
Summary of the invention
The utility model aims to provide a kind of output signal can along with the temperature protection circuit of variations in temperature.
Temperature protection circuit, comprises the first resistance, the second resistance, the first NMOS tube, the 3rd resistance and a NPN and manages:
One termination supply voltage VCC of described first resistance, the base stage of one end of the second resistance described in another termination and the drain electrode of described first NMOS tube and a described NPN pipe;
The base stage of one end of the first resistance described in one termination of described second resistance and the drain electrode of described first NMOS tube and a described NPN pipe, other end ground connection;
The grid of described first NMOS tube connects one end of described 3rd resistance and the collector electrode of a described NPN pipe, and drain electrode connects the base stage of one end of described first resistance and one end of described second resistance and a described NPN pipe, source ground;
One termination supply voltage VCC of described 3rd resistance, the collector electrode of a NPN pipe described in another termination and the grid of described first NMOS tube;
The base stage of a described NPN pipe connects the drain electrode of one end of described first resistance and one end of described second resistance and described first NMOS tube, and collector electrode connects one end of described 3rd resistance and the grid of described first NMOS tube, grounded emitter.
Described first resistance and described second electric resistance partial pressure obtain the base voltage of a voltage as a described NPN pipe, when temperature height, because the BE junction voltage of a described NPN pipe 50 is negative temperature coefficients, when temperature reaches uniform temperature, a described NPN pipe conducting makes output VOUT become low level; During normal work, because a described NPN manages not conducting, such output VOUT is high level.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of a kind of temperature protection circuit of the present utility model.
Fig. 2 is temperature protection voltage variation with temperature figure of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model content is further illustrated.
Temperature protection circuit, as shown in Figure 1, comprises the first resistance 10, second resistance 20, first NMOS tube 30, the 3rd resistance 40 and a NPN pipe 50:
One termination supply voltage VCC of described first resistance 10, the base stage of one end of the second resistance 20 described in another termination and the drain electrode of described first NMOS tube 30 and a described NPN pipe 50;
The base stage of one end of the first resistance 10 described in one termination of described second resistance 20 and the drain electrode of described first NMOS tube 30 and a described NPN pipe 50, other end ground connection;
The grid of described first NMOS tube 30 connects one end of described 3rd resistance 40 and the collector electrode of a described NPN pipe 50, and drain electrode connects the base stage of one end of described first resistance 10 and one end of described second resistance 20 and a described NPN pipe 50, source ground;
One termination supply voltage VCC of described 3rd resistance 40, the collector electrode of a NPN pipe 50 described in another termination and the grid of described first NMOS tube 30;
The base stage of a described NPN pipe 50 connects the drain electrode of one end of described first resistance 10 and one end of described second resistance 20 and described first NMOS tube 30, and collector electrode connects one end of described 3rd resistance 40 and the grid of described first NMOS tube 30, grounded emitter.
Described first resistance 10 and described second resistance 20 dividing potential drop obtain the base voltage of a voltage as a described NPN pipe 50, when temperature height, because the BE junction voltage of a described NPN pipe 50 is negative temperature coefficients, when temperature reaches uniform temperature, described NPN pipe 50 conducting makes output VOUT become low level; During normal work, due to a described NPN pipe 50 not conducting, such output VOUT is high level.
As shown in Figure 2, be temperature protection voltage variation with temperature figure.During normal work, output VOUT is high level; When temperature reaches preset temperature, output VOUT becomes low level.

Claims (1)

1. temperature protection circuit, is characterized in that: comprise the first resistance, the second resistance, the first NMOS tube, the 3rd resistance and a NPN and manage;
One termination supply voltage VCC of described first resistance, the base stage of one end of the second resistance described in another termination and the drain electrode of described first NMOS tube and a described NPN pipe;
The base stage of one end of the first resistance described in one termination of described second resistance and the drain electrode of described first NMOS tube and a described NPN pipe, other end ground connection;
The grid of described first NMOS tube connects one end of described 3rd resistance and the collector electrode of a described NPN pipe, and drain electrode connects the base stage of one end of described first resistance and one end of described second resistance and a described NPN pipe, source ground;
One termination supply voltage VCC of described 3rd resistance, the collector electrode of a NPN pipe described in another termination and the grid of described first NMOS tube;
The base stage of a described NPN pipe connects the drain electrode of one end of described first resistance and one end of described second resistance and described first NMOS tube, and collector electrode connects one end of described 3rd resistance and the grid of described first NMOS tube, grounded emitter.
CN201520844227.4U 2015-10-26 2015-10-26 Temperature protection circuit Expired - Fee Related CN205092240U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520844227.4U CN205092240U (en) 2015-10-26 2015-10-26 Temperature protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520844227.4U CN205092240U (en) 2015-10-26 2015-10-26 Temperature protection circuit

Publications (1)

Publication Number Publication Date
CN205092240U true CN205092240U (en) 2016-03-16

Family

ID=55482899

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520844227.4U Expired - Fee Related CN205092240U (en) 2015-10-26 2015-10-26 Temperature protection circuit

Country Status (1)

Country Link
CN (1) CN205092240U (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160316

Termination date: 20161026