CN205070972U - Touch panel - Google Patents
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- CN205070972U CN205070972U CN201520812636.6U CN201520812636U CN205070972U CN 205070972 U CN205070972 U CN 205070972U CN 201520812636 U CN201520812636 U CN 201520812636U CN 205070972 U CN205070972 U CN 205070972U
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Abstract
The utility model discloses a touch panel belongs to panel display technical field. The utility model discloses a base plate, it has the first surface at least, and the first surface includes first region and second area at least, and the second area lies in the at least one side in first region, the first electrode layer, it is on the first surface at first regional place, and the first electrode layer includes an at least first electrode tandem, and the first electrode tandem is arranged along the first direction, the second electrode lay, it is on the first electrode layer, and the second electrode lay includes an at least second electrode tandem, and the second electrode tandem is arranged along the first direction, and the second electrode lay still includes an at least the third electrode tandem, the third electrode tandem is arranged along the second direction, the first electrode tandem sets up with the third electrode tandem transposition insulator with second electrode tandem coincidence, first electrode tandem. The utility model discloses resistance is low, and the preparation process is simple and convenient and save the cost, and the outward appearance effect is good.
Description
Technical field
The utility model relates to technical field of flat panel display, particularly relates to a kind of contact panel.
Background technology
G+G capacitance plate is by being mainly made up of the sensor glass layer of bottom and contact panel and top cover plate two parts.Its top cover plate is generally toughened glass, and surface is very hard, and hardness can reach more than 8H, and surface corrosion-resistant loses, and light transmittance is up to more than 91% simultaneously, and high permeability is little on display frame impact, and manipulation feel is smooth.
The sensor glass layer of G+G capacitance plate bottom, namely contact panel adopts ITO bridge formation technology usually, be generally tin indium oxide in high temperature environments twice vacuum sputtering coating form ITO (tin indium oxide) layer that two-layer insulation intersects as touch control electrode layer, between above-mentioned two-layer touch control electrode layer, on photoresist, photoetching ITO bridge formation pattern obtains ITO layer.The tin indium oxide used in above-mentioned traditional handicraft, twice plated film must carry out under the high temperature conditions, working condition requires high, and in the process of etching touch control electrode pattern, in the electrode layer of second time plated film, the part of non-electrode tandem need all etch away, because easily produced problem at quarter when being etched in the ITO on bridge formation layer (the first insulating barrier), especially (when resistance is lower) especially severe when the second electrode lay tin indium oxide thickness is thicker, thus product yield may be caused low.The current requirement for meeting drive IC, ITO resistance value should select less resistance value.In addition, spend quarter and also cause ITO pattern edge transition district to become large (namely ITO pattern end face inclined-plane slope angle is less), edge transition district causes greatly the empty limit of ITO pattern serious thus makes ITO pattern outward appearance obvious.
Therefore, current urgent need a kind of can make resistance value less, do not use high temperature plated film, ITO pattern edge transition district is little, ITO pattern outward appearance is better contact panel.
Utility model content
In view of this, the utility model provide a kind of the utility model provide a kind of can make resistance value less, do not use high temperature plated film, ITO edge transition district is little, ITO pattern outward appearance is better contact panel.
For achieving the above object, the technical solution of the utility model is as follows:
According to a kind of contact panel that the utility model provides, it at least comprises: a substrate, and this substrate at least has first surface, and this first surface at least comprises first area and second area, and second area is positioned at least side of first area; First electrode layer, it is formed on the first surface at place, first area, and the first electrode layer comprises at least one the first electrode tandems, and the first electrode tandem arranges along first direction; The second electrode lay, it is formed on the first electrode layer, and the second electrode lay comprises at least one the second electrode tandems, and the second electrode tandem arranges along first direction, and the second electrode lay also comprises at least one third electrode tandem, and third electrode tandem arranges along second direction; First electrode tandem and the second electrode array column weight close, and the first electrode tandem and third electrode tandem transposition insulator are arranged.
Preferably, in the contact panel that the utility model provides, the first electrode layer is completed plated film by tin indium oxide and is etched and forms the first pattern under substrate temperature is not less than 200 degrees celsius, the second electrode lay completes plated film by non-crystalline tin indium oxide room temperature and is formed under substrate temperature is not more than 100 degrees celsius, again by weak acid etching solution etching the second electrode lay formed the second pattern again after through annealing under substrate temperature is not less than 200 degrees celsius, form the second electrode tandem and third electrode tandem, the second electrode lay formed is identical with the first electrode layer performance, close the second electrode lay electrode pattern, etching solution does not change the electric conducting material that the first pattern plated film formed selected by the first electrode layer and the second electrode lay and is low resistance conductive material, preferably, resistance value-the square resistance of the tin indium oxide selected by plated film and non-crystalline tin indium oxide is at most 20 ohm.
Further, in the contact panel that the utility model provides, between the first electrode layer and the second electrode lay, be provided with the first insulating barrier, the second electrode lay be formed with the second insulating barrier; First insulating barrier comprises at least one collets, and the first electrode tandem and third electrode tandem infall are insulated by these collets; The second electrode lay is after etching solution etching, and the second electrode array is listed in collets place and disconnects and close with the first electrode array column weight.
Further, in the contact panel that the utility model provides, be also provided with the first trace layer between the first electrode layer and the first insulating barrier, the first trace layer is drawn from the first electrode tandem, and extends to second area; Also be provided with the second trace layer between the second electrode lay and the second insulating barrier, the second trace layer is drawn from third electrode tandem, and extends to second area.
Preferably, in the contact panel that the utility model provides, the second insulating barrier above the first surface of substrate arranges a cover plate, cover plate covered substrate.
Further, in the contact panel that the utility model provides, be provided with optical functional layer between above-mentioned cover plate and the second insulating barrier, optical functional layer is deposited by least one in silicon nitride, silicon oxynitride and silicon dioxide or other inorganic oxide layer and forms.
In the panel construction that the utility model provides, owing to selecting non-crystalline tin indium oxide as the material of the second electrode lay, the plated film of the second electrode lay is carried out under substrate temperature is not more than 100 degrees celsius, can't therefore etch away after the part that itself and the first electrode array column weight close is etched by etching solution, but with the first electrode tandem superposition, form parallel resistance, first electrode layer and the second electrode lay all can select low electrical resistant material, resistance after the two parallel connection is lower, more meet the service requirement of drive IC, fixing through annealing under substrate temperature is not less than 200 degrees celsius again, second electrode tandem of intersection need not be etched, there is better effect on the contrary, simplify production process, saved production cost simultaneously.Being not more than the part of third electrode tandem on collets formed under 100 degrees celsius at substrate temperature, to carry out etch effect clean to non-crystalline tin indium oxide to utilize etching solution, and the problem of the too fast conductive pattern incompleteness caused in ITO layer of etch-rate can be solved, the pattern edge transition region that the second electrode lay obtains after etching is little, end face surface slope is large, and ITO outward appearance is not obvious.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing:
The schematic cross-section of the contact panel of the preferred embodiment that Fig. 1 provides for the utility model;
Fig. 2 is the schematic diagram of the contact panel of the preferred embodiment shown in Fig. 1;
Schematic diagram after the amplification at the A place that Fig. 3 is the contact panel of the preferred embodiment shown in Fig. 2;
Embodiment
For the contact panel that the utility model provides is described, be described in detail below in conjunction with Figure of description and explanatory note.
The schematic cross-section of the contact panel of the preferred embodiment provided for the utility model with reference to figure 1 and Fig. 2, Fig. 1, Fig. 2 is the schematic diagram of the contact panel of the preferred embodiment shown in Fig. 1.The contact panel that the utility model provides at least comprises a substrate 10, and substrate 10 can select transparent material such as glass, resin to make, and also preferably can use toughened glass.Substrate 10 at least has first surface 100, and this first surface 100 is a continuous and smooth plane or curved surface, and first surface 100 at least comprises first area 101 and second area 102, and second area 102 is positioned at least side of first area 101.The first area 101 of first surface 100 is for touch control operation, and the second area 102 of this first surface 100 is for laying lead-in wire and arranging and the drive IC (not shown) be connected that goes between.First electrode layer 110, it is formed on the first surface 100 at place, first area 101, first electrode layer 110 comprises at least one the first electrode tandems 111, for obtaining better technique effect, first electrode tandem 111 being had one's face covered with is layed on the first area 101 of first surface 100, and the first electrode tandem 111 arranges along first direction.The second electrode lay 120, it is formed on the first electrode layer 110, the second electrode lay 120 comprises at least one the second electrode tandems 121, second electrode tandem 121 arranges along first direction, the second electrode lay 120 also comprises at least one third electrode tandem 122, and third electrode tandem 122 arranges along second direction.First electrode tandem 111 overlaps with the second electrode tandem 121, for obtaining better technique effect, the second electrode tandem 121 is covered the projection of the relative first surface 100 of the first electrode tandem 111 relative to the projection of first surface 100.First electrode tandem 111 and third electrode tandem 122 transposition insulator are arranged, and it can be 90 degree or other angles that the first electrode tandem 111 and third electrode tandem 122 intersect the angle produced.Be provided with the first insulating barrier 130 between first electrode layer 110 and the second electrode lay 120, the second electrode lay 120 be formed with the second insulating barrier 140.It is transparent optical cement that first insulating barrier 130 and the second insulating barrier 140 form material used, and in the adhesive such as the optional organic silica gel of this optical cement, acrylic type resin and unsaturated polyester (UP), polyurethane, epoxy resin, at least one is made.First insulating barrier 130 comprises at least one collets 131, the location point that each first electrode tandem 111 and third electrode tandem 122 intersect arranges collets 131 between, first electrode tandem 111 is insulated by collets 131 with third electrode tandem 122 infall, first electrode tandem 111 is by being electrically insulated with third electrode tandem 122 between collets 131 and first surface 100, and third electrode tandem 122 is electrically insulated away from the side of first surface 100 and the first electrode tandem 111 by collets 131.The second electrode lay 120 is after etching solution etching formation second pattern, and wherein the second electrode tandem 121 disconnects at collets 131 place, and the second electrode tandem 121 is not connected, and cuts off form fragment in collets 131 place, each other can not circulating current.The second electrode tandem 121 part beyond collets 131 project overlaps with the first electrode tandem 111 with the form of fragment.
First electrode layer 110 is completed plated film by tin indium oxide and is etched and forms the first pattern under substrate temperature is not less than 200 degrees celsius, the second electrode lay 120 is by non-crystalline tin indium oxide, namely α-ITO completes plated film under 100 degrees celsius and forms the second pattern being not more than at substrate temperature, this kind of non-crystalline tin indium oxide also has the low and characteristic of electrically conducting transparent of resistance, the non-crystalline tin indium oxide at collets 131 place runs into etching solution solution can be etched, and the conductive pattern of ITO layer needed for reservation that can be complete, the conductive pattern in ITO layer will be caused incomplete because of etching is too fast.The direct contact site branch of tin indium oxide of non-crystalline tin indium oxide and the first electrode layer 110 plated film merges, not easily separated, and when etching with etching solution, the non-crystalline tin indium oxide of this part is not removed by etching.Formation second electrode tandem of annealing under temperature conditions again by 245 degrees centigrade 121 and third electrode tandem 122.The second electrode lay 120 formed is the second electrode lay 120 electrode patterns identical, close with the first electrode layer 110 performance, and etching solution does not change the first pattern.Due to by etching solution etching non-crystalline tin indium oxide, make the conductive pattern edge slope after the second electrode lay 120 etching much larger than the requirement of 25 degree, play the shadow effect that necessarily disappears.
As a kind of preferred embodiment, the resistance value-square resistance of the first electrode layer 110 is less than 20 ohm; The resistance of the second electrode lay 120 is less than 20 ohm.Now, non-crystalline tin indium oxide and the tin indium oxide of the first electrode layer 110 plated film directly contact the part that occurs to merge because the two is in parallel, the resistance value in this region, much smaller than the resistance value of the first electrode layer 110 and the second electrode lay 120, therefore obtains the touch control electrode that resistance is lower.Also be provided with the first trace layer 150, first trace layer 150 between first electrode layer 110 and the first insulating barrier 130 to draw from the first electrode tandem 111, and extend to second area 102.First trace layer 150 is routed at second area 102 and is connected with drive IC.Also be provided with the second trace layer 160, second trace layer 160 between the second electrode lay 120 and the second insulating barrier 140 to draw from third electrode tandem 122, and extend to second area 102.Second trace layer 160 is routed at second area 102 and is connected with drive IC.Second insulating barrier 140 covers the second trace layer 160, has water proof, isolated air, etch-proof effect.First trace layer 150 and the second trace layer 160 are at least made up of metal or metal alloy, also comprise transparent conductive material, and transparent conductive material can be tin indium oxide or its compound.
The second insulating barrier above the first surface of substrate is arranged a cover plate (not shown), this cover plate can select toughened glass to make, and this cover plate substrate covered below it plays the effect of protection contact panel.Be provided with optical functional layer 170 between above-mentioned cover plate and the second insulating barrier 140, optical functional layer 170 is deposited by least one in silicon nitride, silicon oxynitride and silicon dioxide or other inorganic oxide layer and forms.The transmitance reducing non-patterned district is reached by the optical functional layer 170 laid, promote its reflecting rate, and promote the transmitance of patterned area, reduce its reflecting rate, below the reflection differences of non-patterned district and patterned area is down to degree that human eye None-identified distinguishes, reach the effect of the shadow that disappears.
With reference to schematic diagram after the amplification at figure 3, Fig. 3 A place that is the contact panel of the preferred embodiment shown in Fig. 2.As a kind of preferred embodiment, third electrode tandem 122 comprises multiple electrode unit 123.Arbitrary collets 131 are arranged at the location point that the first electrode tandem 111 intersects with third electrode tandem 122, the first electrode tandem 111 at this crosspoint place is positioned at below collets 131, and the third electrode tandem 122 at this crosspoint place is arranged at the top of collets 131.The non-crystalline tin indium oxide line segment extending to adjacent two electrode units 123 along collets 131 surface that in third electrode tandem 122, any two adjacent electrode unit 123 retain after etching above these collets 131 is ITO bridge 124, and this ITO bridge 124 two electrode units 123 adjacent with this place are connected to form path.The resistance value of the first electrode layer 110 is less than 20 ohm; The resistance value of the second electrode lay 120 is less than 20 ohm.Coincide with the first electrode tandem 111 and do not etched liquid corrosion and carve this partial second electrode layer 120 removed and form the second electrode tandem 121, this the second electrode tandem 121 and the first electrode tandem 111 permeate current path, and the resistance value of this path is less than the resistance of the first electrode layer 110, is also less than the resistance of the second electrode lay 120.Therefore, this first electrode layer 110, the second electrode lay 120 and the first electrode layer 110 resistance after parallel connection that overlaps with the second electrode lay 120 can both meet the service requirement of drive IC.
The patterned area of above-mentioned contact panel is because being equipped with low-resistance tin indium oxide or non-crystalline tin indium oxide, and comparatively non-patterned district is low for the transmitance at this place, and its reflectivity comparatively non-patterned district is high.Second insulating barrier 140 is provided with optical functional layer 170, optical functional layer 170 is deposited by least one in silicon nitride, silicon oxynitride and silicon dioxide or other inorganic oxide layer and forms, better, on the second insulating barrier 140, deposited silicon nitride is as optical functional layer.In figure 3, the region of the first electrode tandem 111 region, electrode unit 123 region and ITO bridge 124 is patterned area, and the region beyond the patterned area of substrate 10 is non-patterned district.By the refraction action of optical functional layer 170, non-patterned district, namely the transmitance at substrate 10 place of glass material reduces, and reflectivity increases; The transmitance of patterned area increases, and reflectance reduction, makes reflection differences therebetween effectively be regulated, and makes human eye cannot distinguish vision difference therebetween, reaches the effect of the shadow that disappears.
The utility model obtains the less touch control electrode of resistance value, simplifies production process, has saved production cost simultaneously.Solve the problem of the too fast conductive pattern incompleteness caused in ITO layer of etch-rate.Etched non-crystalline tin indium oxide by etching solution, conductive pattern edge slope is large, plays the shadow effect that disappears.And this contact panel is equipped with optical functional layer 170, below the degree effectively regulating the reflection differences in this contact panel patterned area and non-patterned district to human eye None-identified to distinguish by the refraction action of this optical functional layer 170, do not used high temperature plated film, ITO edge transition district is little, ITO pattern outward appearance is better contact panel.
The better embodiment of the contact panel provided for the utility model above; the restriction to the utility model rights protection scope can not be interpreted as; those skilled in the art should know; without departing from the concept of the premise utility; also can do multiple improvement or replacement; these all improvement or replacement all should within the scope of rights protections of the present utility model, and namely rights protection scope of the present utility model should be as the criterion with claim.
Claims (6)
1. a contact panel, is characterized in that, described contact panel at least comprises:
One substrate, described substrate at least has first surface, and described first surface at least comprises first area and second area, and described second area is positioned at least side of described first area;
First electrode layer, it is formed on the described first surface at place, described first area, and described first electrode layer comprises at least one the first electrode tandems, and described first electrode tandem arranges along first direction;
The second electrode lay, it is formed on described first electrode layer, described the second electrode lay comprises at least one the second electrode tandems, described second electrode tandem arranges along described first direction, described the second electrode lay also comprises at least one third electrode tandem, and described third electrode tandem arranges along second direction;
Described first electrode tandem and described second electrode array column weight close, and described first electrode tandem and described third electrode tandem transposition insulator are arranged.
2. contact panel as claimed in claim 1, it is characterized in that, described first electrode layer is completed plated film by tin indium oxide and is etched and forms the first pattern under substrate temperature is not less than 200 degrees celsius;
Described the second electrode lay completes plated film by non-crystalline tin indium oxide under substrate temperature is not more than 100 degrees celsius, form the second pattern by etching solution etching the second electrode lay again and form described second electrode tandem and described third electrode tandem through annealing under substrate temperature is not less than 200 degrees celsius again, described etching solution does not change described first pattern.
3. contact panel as claimed in claim 2, is characterized in that, be provided with the first insulating barrier, described the second electrode lay be formed with the second insulating barrier between described first electrode layer and described the second electrode lay;
Described first insulating barrier comprises at least one collets, and described first electrode tandem and described third electrode tandem infall are insulated by described collets;
Described the second electrode lay is after etching solution etching, and described second electrode array is listed in described collets place and disconnects and close with described first electrode array column weight.
4. contact panel as claimed in claim 3, it is characterized in that, be also provided with the first trace layer between described first electrode layer and described first insulating barrier, described first trace layer is drawn from described first electrode tandem, and extends to described second area;
Also be provided with the second trace layer between described the second electrode lay and described second insulating barrier, described second trace layer is drawn from described third electrode tandem, and extends to described second area.
5. the contact panel as described in any one of Claims 1-4, is characterized in that, described second insulating barrier above the described first surface of described substrate arranges a cover plate, and described cover plate covers described substrate.。
6. contact panel as claimed in claim 5, it is characterized in that, be provided with optical functional layer between described cover plate and described second insulating barrier, described optical functional layer is deposited by least one in silicon nitride, silicon oxynitride and silicon dioxide or other inorganic oxide layer and forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520812636.6U CN205070972U (en) | 2015-10-20 | 2015-10-20 | Touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520812636.6U CN205070972U (en) | 2015-10-20 | 2015-10-20 | Touch panel |
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| Publication Number | Publication Date |
|---|---|
| CN205070972U true CN205070972U (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520812636.6U Active CN205070972U (en) | 2015-10-20 | 2015-10-20 | Touch panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106598317A (en) * | 2015-10-20 | 2017-04-26 | 深圳莱宝高科技股份有限公司 | Touch panel and manufacture method thereof |
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- 2015-10-20 CN CN201520812636.6U patent/CN205070972U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106598317A (en) * | 2015-10-20 | 2017-04-26 | 深圳莱宝高科技股份有限公司 | Touch panel and manufacture method thereof |
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