CN205046216U - Wafer electroplating fixture - Google Patents
Wafer electroplating fixture Download PDFInfo
- Publication number
- CN205046216U CN205046216U CN201520749646.XU CN201520749646U CN205046216U CN 205046216 U CN205046216 U CN 205046216U CN 201520749646 U CN201520749646 U CN 201520749646U CN 205046216 U CN205046216 U CN 205046216U
- Authority
- CN
- China
- Prior art keywords
- wafer
- hole
- electroplating fixture
- groove structure
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The utility model provides a wafer electroplating fixture, including groove structure, baffle structure and apron structure. Wafer electroplating fixture, design simple structure, effectual wafer edge and the uneven problem of central zone electric current solved, it is final that realize electroplating the coating film thickness of back wafer fringe region and central zone's coating film thickness has fine uniformity.
Description
Technical field
The utility model belongs to semiconductor production manufacturing technology field, is specifically related to wafer electroplating fixture.
Background technology
Copper electroplating technology utilizes electronics and ion transport, transferred on the plating piece of negative electrode by the copper target of anode by plating basal liquid.How coating film thickness on plating piece (wafer), with current density positive correlation, controls the coating film thickness of plating piece (wafer) surperficial different zones, keeps good homogeneity, need the current density improving different zones especially.The usual way of traditional technique is: 1, is placed on by disk in fixture groove in advance, and directly by the contact of several (more than 3 and 3) press contacts, wafer is immersed in electroplate liquid afterwards, and by wafer frontside towards target location; 2, wafer is placed in fixture groove, wafer just to dozens of contact (arrangement position is completely corresponding with crystal round fringes), and is immersed in electroplate liquid after screwing realization contact by the cover plate being placed on wafer rear by wafer frontside edge, and by wafer frontside towards target location.Above two kinds of modes solve only fixation problem and the conductive contact problem of wafer in electroplating process, do not solve crystal circle center region and the uneven problem of the current density of fringe region in technological process, finally cause electroplating rear crystal round fringes region coating film thickness apparently higher than central zone.
Utility model content
The technical problems to be solved in the utility model is to provide wafer electroplating fixture, overcome above-mentioned defect, by improving wafer electroplating fixture, solving crystal circle center region and the current density inequality of fringe region in technological process, electroplating the problem of rear crystal round fringes region coating film thickness apparently higher than central zone.
For solving the problems of the technologies described above, the utility model provides wafer electroplating fixture, comprise groove structure, baffle arrangement and covering plate structure, described groove structure has first surface and the second surface corresponding with described first surface, described first surface is provided with the first wafer hole, described second surface is provided with the second wafer hole, described first wafer hole and the second wafer hole through, sealing-ring is provided with between described first wafer hole and the second wafer hole, described sealing-ring center is provided with the 3rd wafer hole of through described sealing-ring, the surrounding in described 3rd wafer hole is provided with several contacts, the center of described baffle arrangement is provided with the 4th wafer hole of through described baffle arrangement, described covering plate structure has the 3rd surface and four surface corresponding with described 3rd surface, the first surface of described groove structure is fixedly connected with baffle arrangement by retaining screw, the second surface of described groove structure is fixedly connected with the 3rd surface of described covering plate structure by tighten the screws.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the size and dimension in described first wafer hole, the size and dimension in described second wafer hole are all identical with the size and dimension of wafer.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the shape in described 3rd wafer hole is identical with the shape of wafer, and the size in described 3rd wafer hole is less than the size of wafer.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the shape in described 4th wafer hole is identical with the shape of wafer, and the size in described 4th wafer hole is less than the size of wafer.
As a kind of preferred version of wafer electroplating fixture described in the utility model, described groove structure also comprises the first handle, and described first handle is arranged on the top of described groove structure.
As a kind of preferred version of wafer electroplating fixture described in the utility model, described groove structure also comprises joint, and described joint is arranged on the top of described groove structure.
As a kind of preferred version of wafer electroplating fixture described in the utility model, described covering plate structure also comprises the second handle, and described second handle is arranged on the 4th surface of described covering plate structure.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the number of described contact is more than or equal to 10.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the distance between described baffle arrangement and described groove structure is 5mm ~ 15mm.
As a kind of preferred version of wafer electroplating fixture described in the utility model, the material of described baffle arrangement is tetrafluoroethylene.
Compared with prior art, the wafer electroplating fixture that the utility model proposes is by increasing the baffle plate of special shape at specific position, improve the problem of crystal round fringes and central zone current density inequality, after final realization plating, the coating film thickness in crystal round fringes region and the coating film thickness of central zone have good consistence.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.Wherein,
Fig. 1 is the structural representation of wafer electroplating fixture of the present utility model;
Fig. 2 is the structural representation of the groove structure of wafer electroplating fixture of the present utility model;
Fig. 3 is the structural representation of the baffle arrangement of wafer electroplating fixture of the present utility model; With
Fig. 4 is the structural representation of the covering plate structure of wafer electroplating fixture of the present utility model.
Wherein: 1 be groove structure, 11 be second surface for first surface, 111 is the first wafer hole, 12,13 be sealing-ring, 131 be joint for contact, 14 is the first handle, 15,2 for baffle arrangement, 21 be the 4th wafer hole, 3 for covering plate structure, 31 be that the 3rd surface, 32 is the 4th surface, 33 is the second handle.
Embodiment
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in further detail the utility model below in conjunction with embodiment.
First, alleged herein " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the utility model.Different local in this manual " in one embodiment " occurred not all refers to same embodiment, neither be independent or optionally mutually exclusive with other embodiments embodiment.
Secondly; the utility model utilizes structural representation etc. to be described in detail; when describing the utility model embodiment in detail; for ease of explanation; represent that the schematic diagram of wafer electroplating fixture can be disobeyed general ratio and be made partial enlargement; and described schematic diagram is example, it should not limit the scope of the utility model protection at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Embodiment one
Refer to Fig. 1 to Fig. 4, Fig. 1 is the structural representation of wafer electroplating fixture of the present utility model; Fig. 2 is the structural representation of the groove structure of wafer electroplating fixture of the present utility model; Fig. 3 is the structural representation of the baffle arrangement of wafer electroplating fixture of the present utility model; Fig. 4 is the structural representation of the covering plate structure of wafer electroplating fixture of the present utility model.As shown in Figures 1 to 4, described wafer electroplating fixture, it comprises: groove structure 1, baffle arrangement 2 and covering plate structure 3, described groove structure 1 has first surface 11 and the second surface 12 corresponding with described first surface 11, described first surface 11 is provided with the first wafer hole 111, described second surface 12 is provided with the second wafer hole (not shown), described first wafer hole 111 and the second wafer hole through, sealing-ring 13 is provided with between described first wafer hole 111 and the second wafer hole, described sealing-ring 13 center is provided with the 3rd wafer hole (not shown) of through described sealing-ring 13, the surrounding in described 3rd wafer hole is provided with several contacts 131, the center of described baffle arrangement 2 is provided with the 4th wafer hole 21 of through described baffle arrangement 2, described covering plate structure 3 has the 3rd surface 31 and four surface 32 corresponding with described 3rd surface 31, the first surface 11 of described groove structure 1 is fixedly connected with baffle arrangement 2 by retaining screw (not shown), the second surface 12 of described groove structure 1 is fixedly connected with the 3rd surface 31 of described covering plate structure 3 by tighten the screws (not shown).
Wherein, the size and dimension in the size and dimension in described first wafer hole 111, described second wafer hole is all identical with the size and dimension of wafer (not shown).The shape in described 3rd wafer hole is identical with the shape of wafer, and the size in described 3rd wafer hole is less than the size of wafer.The shape in described 4th wafer hole 21 is identical with the shape of wafer, and the size in described 4th wafer hole 21 is less than the size of wafer.
Conveniently extracting, described groove structure 1 also comprises the first handle 14, and described first handle 14 is arranged on the top of described groove structure 1.
Because wafer electroplating fixture is negative electrode, CU target is anode, and therefore, described groove structure 1 also comprises joint 15, and described joint 15 is arranged on the top of described groove structure 1, for being electrically connected with anode.
For the ease of rotating described covering plate structure 3 and picking and placeing described covering plate structure 3, described covering plate structure 3 also comprises the second handle 33, and described second handle 33 is arranged on the 4th surface 32 of described covering plate structure 3.
In a preferred embodiment, the number of described contact 131 is more than or equal to 10.
Distance between described baffle arrangement 2 and described groove structure 1 is 5mm ~ 15mm.
Described groove structure 1 is generally the preparation of PE material, has comparatively strong hardness; The material of described baffle arrangement 2 for being generally tetrafluoroethylene, acid and alkali-resistance, square thin plate; Described covering plate structure is generally PE material, has comparatively strong hardness.
Concrete implementation is:
Described baffle arrangement 2 retaining screw of certain length is fixed on groove structure 1, position is just to the front of wafer, and keep certain level interval with crystal column surface, during operation, wafer is placed between the first wafer hole and the second wafer hole, wafer frontside edge is just to dozens of contact (arrangement position is completely corresponding with crystal round fringes shape), and screw realization contact by the covering plate structure 3 being placed on wafer rear, wafer electroplating fixture with wafer is immersed in electroplate liquid, is energized afterwards.
What the those of ordinary skill in affiliated field should be understood that is, one of feature of the present utility model or object are: the wafer electroplating fixture that the utility model proposes, project organization is simple, effectively solve crystal round fringes and central zone current unevenness problem, after final realization plating, the coating film thickness in crystal round fringes region and the coating film thickness of central zone have good consistence.
It should be noted that, above embodiment is only in order to illustrate the technical solution of the utility model and unrestricted, although be described in detail the utility model with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can modify to the technical solution of the utility model or equivalent replacement, and not departing from the spirit and scope of technical solutions of the utility model, it all should be encompassed in the middle of right of the present utility model.
Claims (10)
1. wafer electroplating fixture, it is characterized in that: comprise groove structure, baffle arrangement and covering plate structure, described groove structure has first surface and the second surface corresponding with described first surface, described first surface is provided with the first wafer hole, described second surface is provided with the second wafer hole, described first wafer hole and the second wafer hole through, sealing-ring is provided with between described first wafer hole and the second wafer hole, described sealing-ring center is provided with the 3rd wafer hole of through described sealing-ring, the surrounding in described 3rd wafer hole is provided with several contacts, the center of described baffle arrangement is provided with the 4th wafer hole of through described baffle arrangement, described covering plate structure has the 3rd surface and four surface corresponding with described 3rd surface, the first surface of described groove structure is fixedly connected with baffle arrangement by retaining screw, the second surface of described groove structure is fixedly connected with the 3rd surface of described covering plate structure by tighten the screws.
2. wafer electroplating fixture as claimed in claim 1, is characterized in that: the size and dimension in described first wafer hole, the size and dimension in described second wafer hole are all identical with the size and dimension of wafer.
3. wafer electroplating fixture as claimed in claim 1, it is characterized in that: the shape in described 3rd wafer hole is identical with the shape of wafer, the size in described 3rd wafer hole is less than the size of wafer.
4. wafer electroplating fixture as claimed in claim 1, it is characterized in that: the shape in described 4th wafer hole is identical with the shape of wafer, the size in described 4th wafer hole is less than the size of wafer.
5. wafer electroplating fixture as claimed in claim 1, it is characterized in that: described groove structure also comprises the first handle, described first handle is arranged on the top of described groove structure.
6. wafer electroplating fixture as claimed in claim 1, it is characterized in that: described groove structure also comprises joint, described joint is arranged on the top of described groove structure.
7. wafer electroplating fixture as claimed in claim 1, is characterized in that: described covering plate structure also comprises the second handle, and described second handle is arranged on the 4th surface of described covering plate structure.
8. wafer electroplating fixture as claimed in claim 1, is characterized in that: the number of described contact is more than or equal to 10.
9. wafer electroplating fixture as claimed in claim 1, is characterized in that: the distance between described baffle arrangement and described groove structure is 5mm ~ 15mm.
10. wafer electroplating fixture as claimed in claim 1, is characterized in that: the material of described baffle arrangement is tetrafluoroethylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520749646.XU CN205046216U (en) | 2015-09-24 | 2015-09-24 | Wafer electroplating fixture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520749646.XU CN205046216U (en) | 2015-09-24 | 2015-09-24 | Wafer electroplating fixture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205046216U true CN205046216U (en) | 2016-02-24 |
Family
ID=55339814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520749646.XU Active CN205046216U (en) | 2015-09-24 | 2015-09-24 | Wafer electroplating fixture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205046216U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106555220A (en) * | 2016-11-11 | 2017-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Semiconductor wafer electroplating clamp and clamping method |
| CN109518244A (en) * | 2018-12-27 | 2019-03-26 | 中国电子科技集团公司第二研究所 | The wafer copper-plating technique of coating edge effect can be weakened |
| CN110528041A (en) * | 2019-08-13 | 2019-12-03 | 广州兴森快捷电路科技有限公司 | For the electroplating processing method of wafer, wafer and wiring board |
-
2015
- 2015-09-24 CN CN201520749646.XU patent/CN205046216U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106555220A (en) * | 2016-11-11 | 2017-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Semiconductor wafer electroplating clamp and clamping method |
| CN106555220B (en) * | 2016-11-11 | 2018-05-18 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Semiconductor wafer electroplating clamp and clamping method |
| CN109518244A (en) * | 2018-12-27 | 2019-03-26 | 中国电子科技集团公司第二研究所 | The wafer copper-plating technique of coating edge effect can be weakened |
| CN110528041A (en) * | 2019-08-13 | 2019-12-03 | 广州兴森快捷电路科技有限公司 | For the electroplating processing method of wafer, wafer and wiring board |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205046216U (en) | Wafer electroplating fixture | |
| CN110760920B (en) | Segmented anode device, electroplating equipment and method for improving coating uniformity | |
| KR101546148B1 (en) | Electro-plating and apparatus for performing the same | |
| CN205508637U (en) | Graphite polar plate | |
| CN201574207U (en) | Electroplating bath with uniform distribution of power lines | |
| CN105648509B (en) | More size compatibility single-wafer electroplating clamps | |
| TW201833389A (en) | Mother plate and producing method of the same, and producing method of mask | |
| CN103233250B (en) | A kind of thick layer gold gold finger galvanizing method | |
| CN204237882U (en) | Many size compatibilities single-wafer electroplating clamp | |
| CN212451705U (en) | Electroplating carrier | |
| CN201545928U (en) | Electroplating tank with shielding device | |
| CN204303565U (en) | A kind of conductive plate | |
| CN206359652U (en) | De-plating device | |
| CN102296336B (en) | Solar cell electroplating equipment capable of improving electroplating uniformity | |
| CN202543369U (en) | Anode module for industrial electrofacing | |
| CN204455338U (en) | For the electroplating clamp of printed circuit board (PCB) | |
| TWI504785B (en) | An electroplating holder and an assembly of the electroplating holder and the electroplating rack | |
| CN204939652U (en) | Electro-plating roller | |
| CN204550742U (en) | A kind of electroplanting device and equipment preparing HIT solar cell gate line electrode | |
| US2766194A (en) | Method of plating | |
| KR20110097225A (en) | Apparatus for plate substrate | |
| CN202643877U (en) | Printed-circuit board electroplating hanging-board structure | |
| CN206843616U (en) | One kind is used for polymorphic structure electroplating jig | |
| CN218951534U (en) | Multi-point conductive wafer electroplating tool | |
| CN203890480U (en) | Jig for partially electroplating stainless steel parts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |