CN204968177U - Protection circuit based on diode temperature test - Google Patents
Protection circuit based on diode temperature test Download PDFInfo
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- CN204968177U CN204968177U CN201520656923.2U CN201520656923U CN204968177U CN 204968177 U CN204968177 U CN 204968177U CN 201520656923 U CN201520656923 U CN 201520656923U CN 204968177 U CN204968177 U CN 204968177U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
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Abstract
The utility model provides a protection circuit based on diode temperature test, include the temperature monitoring module for monitoring system's temperature variation converts the temperature into voltage and carries for host system, host system for carry out the comparison with the voltage conversion who reads for corresponding temperature and to set the temperature value, when the temperature exceedes the setting value, send control signal and give protection control module, protection control module for control signal that the reception control master control was sent carries out control signal, and power module is used for carrying out mains operated to temperature monitoring module, protection control module and host system. The potentiometre is not adopted in this application, but gains better actual effect through the mode of cutting resistance of resistance. Increase MOS pipe switch circuit on the veneer circuit, protected in the veneer crucial device or temperature rise sensitive apparatus to avoid the high temperature influence. This circuit has with low costsly, saves the resource, has good expansibility.
Description
Technical field
The utility model relates to protective circuit, particularly relates to a kind of protective circuit based on diode temperature test.
Background technology
In ultraviolet curing technology, to obtain as the regeneration product of conventional high-tension mercury lamp based on the ultraviolet curing lamp of high-power ultraviolet light emitting diode matrix and apply more and more widely.The ultraviolet curing lamp of ultraviolet LED array composition.Be arranged on the dissimilar high-power ultraviolet light-emitting diode on base plate.Its general principle is all use high-power ultraviolet light-emitting diode composition light emitting diode matrix, thus obtains large-powder ultraviolet output.Relative to high-pressure mercury lamp, ultraviolet curing lamp based on high-power ultraviolet light emitting diode matrix has all many-sided advantages, as light-emitting area irradiation energy evenly, belong to cold light source, cooling system is simple, ultraviolet generation efficiency is high, do not produce infrared ray, be applicable to heat-sensitive material, long working life (at 2 to 5 ten thousand hours), environmentally friendly, cost is lower.
In general, the quantity of the ultraviolet LED adopted based on the ultraviolet curing lamp of high-power ultraviolet light emitting diode matrix is more, in order to improve the intensity of unit optical power, the arrangement also comparatively dense of ultraviolet LED, currently used ultraviolet LED all belongs to large-power light-emitting diodes, single power is at 1W(watt) to about 5W, caloric value is large, temperature rise is fast, if the temperature of light-emitting diode can not be detected in time and carry out respective handling, lifetime of LED may be caused to reduce and even to lose efficacy.
The mode of the embedding temperature sensor generally adopted at present, it is the temperature indirectly being obtained light-emitting diode by the temperature of detection light-emitting diodes tube bottom plate, which not only takies the arrangement space of light-emitting diode, and be a kind of mode of indirect inspection, promptly and accurately cannot reflect the working temperature that light-emitting diode chip for backlight unit is inner real.
Utility model content
In order to solve the problems of the prior art, the utility model provides a kind of protective circuit based on diode temperature test.
The utility model provides a kind of protective circuit based on diode temperature test, this protective circuit comprises temperature monitoring module, protecting control module, main control module and supply module, the output of described temperature monitoring module connects the input of described main control module, the output of described main control module connects the input of described protecting control module, described supply module is electrically connected described temperature monitoring module respectively, protecting control module and main control module, described temperature monitoring module, for monitoring system variations in temperature and be that voltage flows to main control module by temperature transition, main control module, for being that the temperature value of corresponding temperature and setting compares by the voltage transitions of reading, when temperature exceedes set point, sends control signal to protecting control module, protecting control module, for receiving the control signal of control master control transmission and performing control signal, supply module, for carrying out Power supply to temperature monitoring module, protecting control module and main control module.
As further improvement of the utility model, described temperature monitoring module comprises operational amplifier U112A, operational amplifier U112B, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12 level diode D7, 2nd pin of described operational amplifier U112A connects one end of described resistance R8 and the 1st pin of operational amplifier U112A respectively, 3rd pin of described operational amplifier U112A is respectively by described resistance R10 and resistance R12 ground connection, 5th pin of described operational amplifier U112A meets the VCC of power supply, the 4th pin ground connection of described operational amplifier U112A, one end of resistance R3 described in the other end of described resistance R8, one end of described resistance R3 also connects the 2nd pin of described operational amplifier U112B, 3rd pin of described operational amplifier U112B connects one end of described resistance R4, 1st pin of described operational amplifier U112B connects one end of described resistance R9 and one end of resistance R11 respectively and exports OUT, the other end of described resistance R9 is through described resistance R10 ground connection, the other end of described resistance R11 is through resistance R12 ground connection, 5th pin of described operational amplifier U112B connects the VCC of power supply, the 4th pin ground connection of described operational amplifier U112B, the other end of described resistance R3 connects one end of described resistance R1 and the anode of diode D7 respectively, the other end of described resistance R1 connects the VCC of power supply, the minus earth of described diode D7, the other end of described resistance R4 is respectively through resistance R6 ground connection and resistance R7 ground connection, the other end of described resistance R4 also connects described resistance R2 one end in parallel with resistance R5, described resistance R2 is connected the VCC of power supply with the other end of resistance R5 parallel connection.
As further improvement of the utility model, described protecting control module comprises the first control and protection unit and the second control and protection unit, and the input of described first control and protection unit and the input of the second control and protection unit connect described main control module respectively.
As further improvement of the utility model; described first control and protection unit is identical with described second control and protection unit; it comprises metal-oxide-semiconductor Q2, resistance R80, resistance R79 and resistance R78; the grid of described metal-oxide-semiconductor Q2 connects one end of described resistance R80 and one end of resistance R79 respectively; the other end of described resistance R80 connects the output of described main control module; one end of the source electrode of described metal-oxide-semiconductor Q2, the other end of resistance R79 and resistance R78 connects power vd D33 respectively, and the drain electrode of described metal-oxide-semiconductor Q2 and the other end of resistance R78 connect power vd D33_F respectively.
As further improvement of the utility model, described main control module comprises chip U108, electric capacity C322 and resistance R148, 4th pin of described chip U108 connects one end and the power vd D33 of described electric capacity C322 respectively, 5th pin of described chip U108 connects power vd D33 through described resistance R148, described chip U148 the 3rd pin ground connection, 19th pin of described chip U108 connects the first pin output OUT of described operational amplifier U112B, 16th pin of described chip U108 connects the input of described second control and protection unit, 15th pin of described chip U108 connects the input of described first control and protection unit.
The beneficial effects of the utility model are: this application does not adopt potentiometer, but obtain good actual effect by the mode of cutting resistance of resistance.Veneer circuit increases metal-oxide-semiconductor switching circuit, to protect in veneer Primary Component or temperature rise Sensitive Apparatus from temperatures involved.It is low that this circuit has cost, saving resource, has good autgmentability.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the protective circuit that the utility model is tested based on diode temperature;
Fig. 2 is the electrical schematic diagram of the temperature monitoring module of the protective circuit that the utility model is tested based on diode temperature;
Fig. 3 is the electrical schematic diagram of the protective circuit that the utility model is tested based on diode temperature.
Embodiment
To illustrate below in conjunction with accompanying drawing and embodiment further illustrates the utility model.
As Figure 1-3, a kind of protective circuit based on diode temperature test, this protective circuit comprises temperature monitoring module, protecting control module, main control module and supply module, the output of described temperature monitoring module connects the input of described main control module, the output of described main control module connects the input of described protecting control module, described supply module is electrically connected described temperature monitoring module, protecting control module and main control module respectively, described temperature monitoring module, for monitoring system variations in temperature and be that voltage flows to main control module by temperature transition; Main control module, for being that the temperature value of corresponding temperature and setting compares by the voltage transitions of reading, when temperature exceedes set point, sends control signal to protecting control module; Protecting control module, for receiving the control signal of control master control transmission and performing control signal, supply module, for carrying out Power supply to temperature monitoring module, protecting control module and main control module.This application does not adopt potentiometer, but obtains good actual effect by the mode of cutting resistance of resistance.Veneer circuit increases metal-oxide-semiconductor switching circuit, to protect in veneer Primary Component or temperature rise Sensitive Apparatus from temperatures involved.It is low that this circuit has cost, saving resource, has good autgmentability.
Described temperature monitoring module comprises operational amplifier U112A, operational amplifier U112B, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12 level diode D7, 2nd pin of described operational amplifier U112A connects one end of described resistance R8 and the 1st pin of operational amplifier U112A respectively, 3rd pin of described operational amplifier U112A is respectively by described resistance R10 and resistance R12 ground connection, 5th pin of described operational amplifier U112A meets the VCC of power supply, the 4th pin ground connection of described operational amplifier U112A, one end of resistance R3 described in the other end of described resistance R8, one end of described resistance R3 also connects the 2nd pin of described operational amplifier U112B, 3rd pin of described operational amplifier U112B connects one end of described resistance R4, 1st pin of described operational amplifier U112B connects one end of described resistance R9 and one end of resistance R11 respectively and exports OUT, the other end of described resistance R9 is through described resistance R10 ground connection, the other end of described resistance R11 is through resistance R12 ground connection, 5th pin of described operational amplifier U112B connects the VCC of power supply, the 4th pin ground connection of described operational amplifier U112B, the other end of described resistance R3 connects one end of described resistance R1 and the anode of diode D7 respectively, the other end of described resistance R1 connects the VCC of power supply, the minus earth of described diode D7, the other end of described resistance R4 is respectively through resistance R6 ground connection and resistance R7 ground connection, the other end of described resistance R4 also connects described resistance R2 one end in parallel with resistance R5, described resistance R2 is connected the VCC of power supply with the other end of resistance R5 parallel connection.
Described protecting control module comprises the first control and protection unit and the second control and protection unit, and the input of described first control and protection unit and the input of the second control and protection unit connect described main control module respectively.
Described first control and protection unit is identical with described second control and protection unit; it comprises metal-oxide-semiconductor Q2, resistance R80, resistance R79 and resistance R78; the grid of described metal-oxide-semiconductor Q2 connects one end of described resistance R80 and one end of resistance R79 respectively; the other end of described resistance R80 connects the output of described main control module; one end of the source electrode of described metal-oxide-semiconductor Q2, the other end of resistance R79 and resistance R78 connects power vd D33 respectively, and the drain electrode of described metal-oxide-semiconductor Q2 and the other end of resistance R78 connect power vd D33_F respectively.
Described main control module comprises chip U108, electric capacity C322 and resistance R148; 4th pin of described chip U108 connects one end and the power vd D33 of described electric capacity C322 respectively; 5th pin of described chip U108 connects power vd D33 through described resistance R148; described chip U148 the 3rd pin ground connection; 19th pin of described chip U108 connects the first pin output OUT of described operational amplifier U112B; 16th pin of described chip U108 connects the input of described second control and protection unit, and the 15th pin of described chip U108 connects the input of described first control and protection unit.
Be voltage by temperature monitoring module by temperature transition, then read the voltage of sampling by the ADC of main control module, be converted to corresponding temperature, when the temperature recorded exceedes the mistake temperature value of setting, the voltage of power supply disconnects by master control module controls metal-oxide-semiconductor.Thus the protection realized circuit board.
The performance of temperature on diode has larger impact, and when temperature raises, the forward voltage drop of diode will reduce, and often increase by 1 DEG C, forward voltage drop reduces about 2mV.R2, R5, R6 and R7 circuit dividing potential drop is set to the diode forward conducting voltage 50 DEG C time of D7 diode.According to diode characteristic, electric current has good temperature linearity more than 20 milliamperes, so the resistance of R1 is very little, ensure that D7 at least flows through the electric current of 20ma.R5, R7 are greater than 50*R6 or more than R2.At normal temperatures 25 DEG C time, temperature rise is at 75 DEG C, and 75*0.002, approximates 0.15V, and at this moment D7 voltage is higher than R2, R5, R6 and R7 circuit dividing potential drop, and the voltage of U112A equals for U112B range 10%.
Above content is in conjunction with concrete preferred implementation further detailed description of the utility model, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, without departing from the concept of the premise utility, some simple deduction or replace can also be made, all should be considered as belonging to protection range of the present utility model.
Claims (5)
1. the protective circuit based on diode temperature test, it is characterized in that: this protective circuit comprises temperature monitoring module, protecting control module, main control module and supply module, the output of described temperature monitoring module connects the input of described main control module, the output of described main control module connects the input of described protecting control module, described supply module is electrically connected described temperature monitoring module respectively, protecting control module and main control module, described temperature monitoring module, for monitoring system variations in temperature and be that voltage flows to main control module by temperature transition, main control module, for being that the temperature value of corresponding temperature and setting compares by the voltage transitions of reading, when temperature exceedes set point, sends control signal to protecting control module, protecting control module, for receiving the control signal of control master control transmission and performing control signal, supply module, for carrying out Power supply to temperature monitoring module, protecting control module and main control module.
2. protective circuit according to claim 1, it is characterized in that: described temperature monitoring module comprises operational amplifier U112A, operational amplifier U112B, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12 level diode D7, 2nd pin of described operational amplifier U112A connects one end of described resistance R8 and the 1st pin of operational amplifier U112A respectively, 3rd pin of described operational amplifier U112A is respectively by described resistance R10 and resistance R12 ground connection, 5th pin of described operational amplifier U112A meets the VCC of power supply, the 4th pin ground connection of described operational amplifier U112A, one end of resistance R3 described in the other end of described resistance R8, one end of described resistance R3 also connects the 2nd pin of described operational amplifier U112B, 3rd pin of described operational amplifier U112B connects one end of described resistance R4, 1st pin of described operational amplifier U112B connects one end of described resistance R9 and one end of resistance R11 respectively and exports OUT, the other end of described resistance R9 is through described resistance R10 ground connection, the other end of described resistance R11 is through resistance R12 ground connection, 5th pin of described operational amplifier U112B connects the VCC of power supply, the 4th pin ground connection of described operational amplifier U112B, the other end of described resistance R3 connects one end of described resistance R1 and the anode of diode D7 respectively, the other end of described resistance R1 connects the VCC of power supply, the minus earth of described diode D7, the other end of described resistance R4 is respectively through resistance R6 ground connection and resistance R7 ground connection, the other end of described resistance R4 also connects described resistance R2 one end in parallel with resistance R5, described resistance R2 is connected the VCC of power supply with the other end of resistance R5 parallel connection.
3. protective circuit according to claim 2; it is characterized in that: described protecting control module comprises the first control and protection unit and the second control and protection unit, the input of described first control and protection unit and the input of the second control and protection unit connect described main control module respectively.
4. protective circuit according to claim 3, it is characterized in that: described first control and protection unit is identical with described second control and protection unit, it comprises metal-oxide-semiconductor Q2, resistance R80, resistance R79 and resistance R78, the grid of described metal-oxide-semiconductor Q2 connects one end of described resistance R80 and one end of resistance R79 respectively, the other end of described resistance R80 connects the output of described main control module, the source electrode of described metal-oxide-semiconductor Q2, the other end of resistance R79 and one end of resistance R78 connect power vd D33 respectively, the drain electrode of described metal-oxide-semiconductor Q2 and the other end of resistance R78 connect power vd D33_F respectively.
5. protective circuit according to claim 4, it is characterized in that: described main control module comprises chip U108, electric capacity C322 and resistance R148, 4th pin of described chip U108 connects one end and the power vd D33 of described electric capacity C322 respectively, 5th pin of described chip U108 connects power vd D33 through described resistance R148, described chip U148 the 3rd pin ground connection, 19th pin of described chip U108 connects the first pin output OUT of described operational amplifier U112B, 16th pin of described chip U108 connects the input of described second control and protection unit, 15th pin of described chip U108 connects the input of described first control and protection unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520656923.2U CN204968177U (en) | 2015-08-26 | 2015-08-26 | Protection circuit based on diode temperature test |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520656923.2U CN204968177U (en) | 2015-08-26 | 2015-08-26 | Protection circuit based on diode temperature test |
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| Publication Number | Publication Date |
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| CN204968177U true CN204968177U (en) | 2016-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520656923.2U Active CN204968177U (en) | 2015-08-26 | 2015-08-26 | Protection circuit based on diode temperature test |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111083856A (en) * | 2019-12-16 | 2020-04-28 | 华帝股份有限公司 | Failure detection circuit and detection method for LED lamp |
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2015
- 2015-08-26 CN CN201520656923.2U patent/CN204968177U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111083856A (en) * | 2019-12-16 | 2020-04-28 | 华帝股份有限公司 | Failure detection circuit and detection method for LED lamp |
| CN111083856B (en) * | 2019-12-16 | 2022-02-22 | 华帝股份有限公司 | Failure detection circuit and detection method for LED lamp |
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