CN204945318U - Measure the device of silicon nano-pillar photoelectric characteristic - Google Patents
Measure the device of silicon nano-pillar photoelectric characteristic Download PDFInfo
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- CN204945318U CN204945318U CN201520292856.0U CN201520292856U CN204945318U CN 204945318 U CN204945318 U CN 204945318U CN 201520292856 U CN201520292856 U CN 201520292856U CN 204945318 U CN204945318 U CN 204945318U
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Abstract
The utility model belongs to nanometer semiconductor structure field of measuring technique, is specially in the device measuring silicon nano-pillar photoelectric characteristic.This device comprises atomic force microscope, semiconductor laser and fixed mount; Atomic force microscope comprises sample stage, conductive pinpoint, current processing module and control system, and control system moves above sample stage for controlling conductive pinpoint, and the electric signal recorded in record current processing module; Semiconductor laser comprises power governor and optical fiber; Fixed mount comprises panel and base, and panel is fixed on base, the angle adjustable between panel and base, and face plate center arranges a circular hole, and optical fiber is arranged at the top of sample stage through circular hole, and optical fiber forms area on sample stage surface and is less than 1mm
2hot spot.The device of measurement silicon nano-pillar photoelectric characteristic of the present utility model, utilizes the measurement advantage in atomic force microscope nanometer magnitude, obtains the photocurrent of single silicon nano-pillar and the relation between the local quantity of electric charge and laser power.
Description
Technical field
The utility model belongs to nanometer semiconductor structure field of measuring technique, is specifically related to a kind of device measuring silicon nano-pillar photoelectric characteristic.
Background technology
One-dimensional silicon nanostructure is paid close attention to because it is more and more subject to people in the potential application of electronics and field of photoelectric devices.Theoretical and experimentally research all shows after nano-pillar is vertically arranged in periodic ordered structure, and the absorption light of nano-pillar and the ability of trap-charge are all improved.The application in solar cell of silicon nano column array and the efficiency of raising solar cell receive great concern.At present, had considerable about the preparation of nano column array, the research of photoelectricity, but imperfection has been gone back for the research of the photoelectric characteristic of the single nano-pillar of different structure.
In nanometer scale, the characteristic of application SPM technical research nano material has very large advantage, wherein, photoconduction atomic force microscope (PhotoconductiveAtomicForceMicroscopy, PCAFM) technology and electrostatic force microscope (ElectrostaticForceMicroscopy, EFM) have been used to the electric charge local character studying the nano material such as carbon nano-tube, CdSe quantum dot.And EFM is when additional AC bias, and the phase signal of output can the electric polarization of direct detection quantum dot and the photoinduced charged phenomenon of photovoltaic film.
Utility model content
The purpose of this utility model is, provides a kind of device measuring silicon nano-pillar photoelectric characteristic, measures the photoelectric characteristic of single silicon nano-pillar.
The device of the measurement silicon nano-pillar photoelectric characteristic that the utility model provides, comprises atomic force microscope, semiconductor laser and fixed mount; Wherein:
Described atomic force microscope, comprises sample stage, conductive pinpoint, current processing module and control system, and control system moves above sample stage for controlling conductive pinpoint, and the electric signal recorded in record current processing module;
Described semiconductor laser, comprises power governor and optical fiber;
Described fixed mount, comprises panel and base, and panel is fixed on base, angle adjustable between panel and base, face plate center arranges a circular hole, and optical fiber is arranged at the top of sample stage through circular hole, after opening semiconductor laser, optical fiber forms area on sample stage surface and is less than 1mm
2hot spot.
Optionally, the two sides of panel are respectively arranged with and regulate the first vernier adjustment knob of optical fiber relative sample platform vertical direction movement and the second vernier adjustment knob of relative sample platform horizontal direction movement.
Optionally, described atomic force microscope also comprises CCD imaging system, for observing conductive pinpoint and the hot spot position relative to silicon nano-pillar sample surfaces.
Optionally, the device measuring silicon nano-pillar photoelectric characteristic also comprises temperature control system, and temperature control system is positioned at sample stage surface, and the temperature-control range of temperature control system is-10 DEG C-100 DEG C.
Optionally, the sample stage of atomic force microscope and fixed mount are all arranged on vibration isolators.
Optionally, the output wavelength of described semiconductor laser is 405nm.
Optionally, described fiber optic aperture is 100 μm-200 μm.
Optionally, the range of adjustment of described semiconductor laser output power is 0-300mW.
Optionally, the cycle of silicon nano column array is 500nm, and the height of single silicon nano-pillar is 0.5 μm-1.5 μm, and diameter is 100nm-150nm.
Optionally, described conductive pinpoint is Diamond tip, SCM-PIT needle point or 75EG needle point.
The utility model provides in the device measuring silicon nano-pillar photoelectric characteristic, comprises atomic force microscope, semiconductor laser and fixed mount; Described atomic force microscope comprises sample stage, conductive pinpoint, current processing module and control system, and control system moves above sample stage for controlling conductive pinpoint, and the electric signal recorded in record current processing module; Described semiconductor laser comprises power governor and optical fiber; Described fixed mount comprises panel and base, and panel is fixed on base, the angle adjustable between panel and base, face plate center arranges a circular hole, optical fiber is arranged at the top of sample stage through circular hole, and after opening semiconductor laser, optical fiber forms area on sample stage surface and is less than 1mm
2hot spot.The device of measurement silicon nano-pillar photoelectric characteristic of the present utility model, utilizes the measurement advantage in atomic force microscope nanometer magnitude, obtains the photocurrent of single silicon nano-pillar and the relation between the local quantity of electric charge and laser power.
Accompanying drawing explanation
Fig. 1 is the structural representation of the device of measurement silicon nano-pillar photoelectric characteristic of the present utility model.
Fig. 2 is the scanning electron microscope (SEM) photograph of silicon nano-pillar sample of the present utility model.
Fig. 3 is the curve of electric current under the different laser power of silicon nano-pillar measured in the utility model.
Fig. 4 is the curve of the local electric charge under the different laser power of silicon nano-pillar measured in the utility model.
Embodiment
Be described in more detail below in conjunction with the device of schematic diagram to measurement silicon nano-pillar photoelectric characteristic of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
Core concept of the present utility model is, provides in the device measuring silicon nano-pillar photoelectric characteristic, comprises atomic force microscope, semiconductor laser and fixed mount; Described atomic force microscope comprises sample stage, conductive pinpoint, current processing module and control system, and control system moves above sample stage for controlling conductive pinpoint, and the electric signal recorded in record current processing module; Described semiconductor laser comprises power governor and optical fiber; Described fixed mount comprises panel and base, and panel is fixed on base, the angle adjustable between panel and base, face plate center arranges a circular hole, optical fiber is arranged at the top of sample stage through circular hole, and after opening semiconductor laser, optical fiber forms area on sample stage surface and is less than 1mm
2hot spot.The device of measurement silicon nano-pillar photoelectric characteristic of the present utility model, utilizes the measurement advantage in atomic force microscope nanometer magnitude, obtains the photocurrent of single silicon nano-pillar and the relation between the local quantity of electric charge and laser power.
Hereafter the device of composition graphs 1-Fig. 4 to the photoelectric characteristic of measurement semiconductor nano-pillar of the present utility model is specifically described.
Shown in figure 1, the device of measurement silicon nano-pillar photoelectric characteristic of the present utility model, comprises atomic force microscope 10, semiconductor laser 20 and fixed mount 30.
Wherein, described atomic force microscope 10 comprises sample stage 13, conductive pinpoint 11, current processing module 12 and control system 14.In test process, the sample conductive copper of silicon nano-pillar to be measured is adhesive on iron plate, be positioned on sample stage 13, thus silicon nano-pillar with realize between sample stage being electrically connected, conductive pinpoint 11 is positioned at above silicon nano-pillar, and the distance between silicon nano-pillar is controlling in nanometer scale, the shape appearance figure of the silicon nano-pillar sample in the utility model is with reference to shown in figure 2, silicon nano-pillar is for adopting polystyrene sphere as template, metal catalyzed process etching is formed, the cycle of silicon nano column array is 500nm, the height of silicon nano-pillar is 0.5 μm-1.5 μm, diameter is 100nm-150nm.Current processing module 12 carries out the process such as amplification for the electric signal recorded conductive pinpoint 11, and control system 14 moves for controlling conductive pinpoint 11 above sample stage 13, and the electric signal recorded in record current processing module 12.In the present embodiment, conductive pinpoint 11 can be selected to be the needle point of Diamond tip, SCM-PIT needle point or 75EG needle point model according to the requirement of measuring, the resonance peak of Diamond tip is 400Hz-450Hz, for measuring the electric current of silicon nano-pillar under connecing PCAFM pattern, SCM-PIT needle point or 75EG needle point, first resonance peak of SCM-PIT7 needle point and 5EG needle point is 70Hz-80Hz, for measuring the quantity of electric charge of the local of silicon nano-pillar under EFM pattern.
In addition, atomic force microscope 10 also includes CCD imaging device (not shown), can in test preparatory stage and test process, observe the position relationship of hot spot relative to silicon nano-pillar sample surfaces of conductive pinpoint and laser, ensure that the silicon nano-pillar that conductive pinpoint 11 is tested is subject to exciting of laser facula.
Described semiconductor laser 20 comprises power governor 21 and optical fiber 22, in the present embodiment, the output wavelength that described semiconductor laser 20 adopts is the bluish violet color laser of 405nm, the range of adjustment of described semiconductor laser 20 output power is 0-300mW, described fiber optic aperture is 100 μm-200 μm, has good collimation.In test process, change laser power, thus test different voltage in a silicon nano-pillar under, the photoelectric characteristic of different laser power.This is, in other embodiments of the present utility model, can also adopt the semiconductor laser of different optical maser wavelength, and such as, 590nm, or the semiconductor laser of variable wavelength, this is the selection carried out as required, and the utility model is not as limit.
Described fixed mount 30 comprises panel 32 and base 31, panel 32 is movably connected on base 31, and the angle between panel 32 and base 31 is A, and, angle A between panel 32 and base 31 is adjustable, for regulating coarse adjustment optical fiber 22 dozens of positions at sample surfaces.Panel 32 center arranges a circular hole (not shown), and optical fiber 22 is arranged at the top of sample stage 13 through circular hole, and after opening the switch of semiconductor laser 20, optical fiber 22 forms area on sample stage 13 surface and is less than 1mm
2hot spot.The two sides of panel are respectively arranged with and regulate the first vernier adjustment knob 321 of optical fiber relative sample platform vertical direction movement and the second vernier adjustment knob 322 of relative sample platform horizontal direction movement, thus the first vernier adjustment knob 321 and the second vernier adjustment knob 322 can regulate fine tuning hot spot to beat position at sample surfaces.Silicon nano-pillar sample is placed on sample stage 13, by the coarse adjustment of panel 32 and the fine tuning of the first vernier adjustment knob 321 and the second vernier adjustment knob 322, and, observed the position relationship of hot spot relative to silicon nano-pillar sample surfaces of conductive pinpoint 13 and laser by CCD imaging system, ensure that the silicon nano-pillar that conductive pinpoint 11 is tested is subject to exciting of laser facula.
Be understandable that, in order to ensure accuracy and the reliability of measurement, sample stage 13 and the fixed mount 30 of atomic force microscope 10 are all arranged on vibration isolators 40, thus in test process, the disturbance of surrounding environment etc. can be ignored for the impact of test.Meanwhile, sample stage 13, conductive pinpoint 11 and current processing module 12 and optical fiber 22 are placed in a chamber, in test process, in chamber, pass into nitrogen always, prevent silicon nano-pillar or conductive pinpoint 11 in test process to be subject to the impact of oxygen.
The photoelectricity flow graph of the silicon nano-pillar of testing under PCAFM pattern is with reference to shown in figure 3, and wherein, ordinate is voltage (V), and horizontal ordinate is electric current (nA), and test does not add laser (0W/cm
2), 4W/cm
2and 6W/cm
2under laser power, voltage arrives between+2V at-2V, the size of photocurrent.As can be seen from Figure 3, along with the increase of laser power, silicon nano-pillar under forward voltage and negative voltage situation, photocurrent increases all thereupon.
The quantity of electric charge of the local of the silicon nano-pillar of testing under EFM pattern is with reference to shown in figure 4, and in Fig. 3, horizontal ordinate is laser power (0W/cm
2), ordinate is electric charge number.Test does not add laser (0W/cm
2), 2W/cm
2, 4W/cm
2, 6W/cm
2and 8W/cm
2under laser power, the amount of charge of silicon nano-pillar local, can obviously find out in figure, and along with the increase of laser power, the quantity of electric charge of silicon nano-pillar local also increases thereupon.
Claims (9)
1. measure a device for silicon nano-pillar photoelectric characteristic, it is characterized in that, comprise atomic force microscope, semiconductor laser and fixed mount;
Described atomic force microscope comprises sample stage, conductive pinpoint, current processing module and control system, and control system moves above sample stage for controlling conductive pinpoint, and the electric signal recorded in record current processing module;
Described semiconductor laser comprises power governor and optical fiber;
Described fixed mount comprises panel and base, active link between panel and base, the angle adjustable between panel and base, and face plate center arranges a circular hole, and optical fiber is arranged at the top of sample stage through circular hole, and optical fiber forms area on sample stage surface and is less than 1mm
2hot spot.
2. the device measuring silicon nano-pillar photoelectric characteristic as claimed in claim 1, it is characterized in that, the two sides of panel are respectively arranged with and regulate the first vernier adjustment knob of optical fiber relative sample platform vertical direction movement and the second vernier adjustment knob of relative sample platform horizontal direction movement.
3. the as claimed in claim 1 or 2 device measuring silicon nano-pillar photoelectric characteristic, it is characterized in that, described atomic force microscope also comprises CCD imaging system, for observing conductive pinpoint and the hot spot position relative to silicon nano-pillar sample surfaces.
4. the device measuring silicon nano-pillar photoelectric characteristic as claimed in claim 3, it is characterized in that, the sample stage of atomic force microscope and fixed mount are all arranged on vibration isolators.
5. the device of the measurement silicon nano-pillar photoelectric characteristic as described in claim 1,2 or 4, is characterized in that, the output wavelength of described semiconductor laser is 405nm.
6. the device measuring silicon nano-pillar photoelectric characteristic as claimed in claim 5, it is characterized in that, described fiber optic aperture is 100 μm-200 μm.
7. the device measuring silicon nano-pillar photoelectric characteristic as claimed in claim 5, it is characterized in that, the range of adjustment of described semiconductor laser output power is 0-300mW.
8. the device of the measurement silicon nano-pillar photoelectric characteristic as described in claim 1,2,4,6 or 7, it is characterized in that, the cycle of silicon nano column array is 500nm, the height of single silicon nano-pillar is 0.5 μm-1.5 μm, and diameter is 100nm-150nm.
9. the device of the measurement silicon nano-pillar photoelectric characteristic as described in claim 1,2,4,6 or 7, is characterized in that, described conductive pinpoint is Diamond tip, SCM-PIT needle point or 75EG needle point.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520292856.0U CN204945318U (en) | 2015-05-07 | 2015-05-07 | Measure the device of silicon nano-pillar photoelectric characteristic |
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|---|---|---|---|
| CN201520292856.0U CN204945318U (en) | 2015-05-07 | 2015-05-07 | Measure the device of silicon nano-pillar photoelectric characteristic |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109142796A (en) * | 2018-09-04 | 2019-01-04 | 南京航空航天大学 | A kind of object sunk area surface geometry appearance restoring method and system |
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2015
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109142796A (en) * | 2018-09-04 | 2019-01-04 | 南京航空航天大学 | A kind of object sunk area surface geometry appearance restoring method and system |
| CN109142796B (en) * | 2018-09-04 | 2019-11-15 | 南京航空航天大学 | A kind of object sunk area surface geometry appearance restoring method and system |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160106 Termination date: 20180507 |
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| CF01 | Termination of patent right due to non-payment of annual fee |