CN204894653U - Antireflection coating and subtract reflection glass - Google Patents

Antireflection coating and subtract reflection glass Download PDF

Info

Publication number
CN204894653U
CN204894653U CN201520112558.9U CN201520112558U CN204894653U CN 204894653 U CN204894653 U CN 204894653U CN 201520112558 U CN201520112558 U CN 201520112558U CN 204894653 U CN204894653 U CN 204894653U
Authority
CN
China
Prior art keywords
layer
silicon nitride
thickness
nitride layer
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201520112558.9U
Other languages
Chinese (zh)
Inventor
余鹏
王春平
郑建万
常小喜
汪学军
方凤军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YICHANG NANBO DISPLAY DEVICES CO., LTD.
Original Assignee
SHENZHEN NANBO WELLLIGHT CONDUCTIVE COATING CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHENZHEN NANBO WELLLIGHT CONDUCTIVE COATING CO Ltd filed Critical SHENZHEN NANBO WELLLIGHT CONDUCTIVE COATING CO Ltd
Priority to CN201520112558.9U priority Critical patent/CN204894653U/en
Application granted granted Critical
Publication of CN204894653U publication Critical patent/CN204894653U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)

Abstract

The utility model discloses an antireflection coating and subtract reflection glass. This antireflection coating is including the silicon nitride layer, a silicon dioxide layer, the 11 silicon nitride layer, the 2nd silicon dioxide layer and the 21 silicon nitride layer that stack gradually, the thickness on silicon nitride layer is 10nm-12nm, a silicon dioxide layer's thickness is 30nm-38nm, the thickness of the 11 silicon nitride layer is 30nm-40nm, the 2nd silicon dioxide layer's thickness is 80nm-100nm, the thickness of the 21 silicon nitride layer is 5nm-10nm. Above -mentioned antireflection coating's hardness is higher and insulating properties is good.

Description

Antireflective coating and anti reflection glass
Technical field
The utility model relates to a kind of antireflective coating and anti reflection glass.
Background technology
Along with intelligent touch mobile phone, dull and stereotyped situation of selling well, increasing people forms the custom using and touch electronic product, has cover-plate glass above the screen of touch electronic product.But because glass has the effect of reverberation, when outdoor solar light or indoor high light are better than the transmitted light of LCD backlight, the reflection ray that each surface of glass can exist about 4.2% reflects into human eye, causes eyes not see displaying contents on screen, affects the use of product.
Existing anti reflection glass glass substrate one side or two-sidedly prepare antireflective coating, thus under outdoor solar light or indoor high light, light reflectance is lower, creates Clear & Transparent visual space, promotes and touches the readability of electronic product in the sun or under high light.
But existing antireflective coating case hardness is not high enough, in use easily scratches, thus affects the attractive in appearance of product; The insulation resistance value of existing antireflective coating is at below 1G Ω simultaneously, and insulating properties are not good.
Utility model content
Based on this, be necessary to provide a kind of hardness higher and the good antireflective coating of insulating properties and anti reflection glass.
A kind of antireflective coating, comprises the silicon nitride layer, the first silicon dioxide layer, the one one silicon nitride layer, the second silicon dioxide layer and the 21 silicon nitride layer that stack gradually;
The thickness of described silicon nitride layer is 10nm ~ 15nm;
The thickness of described first silicon dioxide layer is 50nm ~ 65nm;
The thickness of described one one silicon nitride layer is 35nm ~ 45nm;
The thickness of described second silicon dioxide layer is 90nm ~ 105nm;
The thickness of described 21 silicon nitride layer is 5nm ~ 10nm.
In one embodiment, the thickness of described silicon nitride layer is 10nm; The thickness of described first silicon dioxide layer is 62nm; The thickness of described one one silicon nitride layer is 38nm; The thickness of described second silicon dioxide layer is 102nm; The thickness of described 21 silicon nitride layer is 5nm.
A kind of anti reflection glass, comprises glass substrate and is laminated in the above-mentioned antireflective coating of described glass baseplate surface.
In one embodiment, described silicon nitride layer is laminated in the surface of described glass substrate.
In one embodiment, the material of described glass substrate is high lead glass, and thickness is 0.5 μm ~ 0.56 μm.
In one embodiment, also comprise and to be formed between described glass substrate and described antireflective coating and the first conductive layer stacked gradually, the first photosensitive layer, the second conductive layer and the second photosensitive layer, described first conductive layer is laminated in described glass baseplate surface, and described silicon nitride layer is laminated in the surface of described second photosensitive layer.
In one embodiment, also comprise and be formed at the above-mentioned antireflective coating of described glass away from a side surface of described first conductive layer.
In one embodiment, described first conductive layer is ITO layer, and thickness is 30nm ~ 45nm; Described second conductive layer is ITO layer, and thickness is 200nm ~ 250nm.
In one embodiment, the thickness of described first photosensitive layer is 1.2 μm ~ 1.5 μm; The thickness of described second photosensitive layer is 1.2 μm ~ 1.5 μm.
This antireflective coating, comprise silicon nitride layer, the first silicon dioxide layer, the one one silicon nitride layer, the second silicon dioxide layer and the 21 silicon nitride layer, the film layer structure of the suitable thickness that transmitance height combines, make antireflective coating anti-reflective effect better, when being applied to electronic product, under outdoor solar light or indoor high light, light reflectance is 1% ~ 2.5%; Pass through Si 3n 4, SiN and SiO 2combination, make the hardness of antireflective coating better, insulaion resistance is greater than 1G Ω, and insulating properties are better, thus can ensure the insulating properties of electronic product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the antireflective coating of an embodiment;
Fig. 2 is the structural representation of the anti reflection glass of an embodiment.
Detailed description of the invention
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in detail detailed description of the invention of the present utility model below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the utility model.But the utility model can be much different from alternate manner described here to implement, those skilled in the art can when doing similar improvement without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public concrete enforcement.
Refer to Fig. 1, an embodiment antireflective coating 100, comprise silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60 stacked gradually.
The material of silicon nitride layer 20 is silicon nitride (Si 3n 4).Si 3n 4refractive index be 1.7 ~ 1.8.Adopt Si 3n 4as the material of silicon nitride layer 20, make the transmitance of silicon nitride layer 20 relatively low.
Thickness 10nm ~ the 15nm of silicon nitride layer 20.Preferably, the thickness of silicon nitride layer 20 is 10nm.
The material of the first silicon dioxide layer 30 is SiO 2.SiO 2refractive index be 1.48.Adopt SiO 2as the material of the first silicon dioxide layer 30, make the transmitance of the first silicon dioxide layer 30 higher relative to silicon nitride layer 20.
The thickness of the first silicon dioxide layer 30 is 50nm ~ 65nm.Preferably, the thickness of the first silicon dioxide layer 30 is 62nm.
The material of the one one silicon nitride layer 40 is a silicon nitride (SiN).The refractive index of SiN is 2.0.Adopt SiN as the material of the one one silicon nitride layer 40, make the transmitance of the one one silicon nitride layer 40 lower relative to the first silicon dioxide layer 30.
The thickness of the one one silicon nitride layer 40 is 35nm ~ 45nm.Preferably, the thickness of the one one silicon nitride layer 40 is 38nm.
The material of the second silicon dioxide layer 50 is SiO 2.SiO 2refractive index be 1.48.Adopt SiO 2as the material of the second silicon dioxide layer 50, make the transmitance of the second silicon dioxide layer 50 relatively high.
The thickness of the second silicon dioxide layer 50 is 90nm ~ 105nm.Preferably, the thickness of the second silicon dioxide layer 50 is 102nm.
The material of the 21 silicon nitride layer 60 is SiN.The refractive index of SiN is 2.0.Adopt SiN as the material of the 21 silicon nitride layer 60, make the transmitance of the 21 silicon nitride layer 60 relatively low.
The thickness of the 21 silicon nitride layer 60 is 5nm ~ 10nm.Preferably, the thickness of the 21 silicon nitride layer 60 is 5nm.
Above-mentioned antireflective coating, comprise silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60, the film layer structure of the suitable thickness that transmitance height combines, make antireflective coating 100 anti-reflective effect better, when being applied to electronic product, under outdoor solar light or indoor high light, light reflectance is 1.0% ~ 2.5%; Pass through Si 3n 4, SiN and SiO 2combination, make the hardness of antireflective coating 100 better, insulaion resistance is greater than 1G Ω, and insulating properties are better, thus can ensure the insulating properties of electronic product.
The preparation method of above-mentioned antireflective coating 100, comprises the steps:
S10, provide substrate.
It should be noted that, substrate can be glass substrate, silicon chip or PET film etc., uses the situation of antireflective coating 100 as required and determines.
Preferably, first cleaning is carried out and drying to substrate.
S20, deposit silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60 successively at substrate surface.
The material of silicon nitride layer 20 is silicon nitride (Si 3n 4).Si 3n 4refractive index be 1.7 ~ 1.8.Adopt Si 3n 4as the material of silicon nitride layer 20, make the transmitance of silicon nitride layer 20 relatively low.
Thickness 10nm ~ the 15nm of silicon nitride layer 20.Preferably, the thickness of silicon nitride layer 20 is 10nm.
Specifically in the present embodiment, silicon nitride layer 20 is prepared by magnetron sputtering, and the parameter that magnetron sputtering prepares silicon nitride layer 20 is: background vacuum is 4.8 × 10 -3~ 5.0 × 10 -3pa, the vacuum in plated film chamber is 2.3 × 10 -3~ 2.6 × 10 -3pa, power is 3 ~ 4Kw.
The material of the first silicon dioxide layer 30 is SiO 2.SiO 2refractive index be 1.48.Adopt SiO 2as the material of the first silicon dioxide layer 30, make the transmitance of the first silicon dioxide layer 30 higher relative to silicon nitride layer 20.
The thickness of the first silicon dioxide layer 30 is 50nm ~ 65nm.Preferably, the thickness of the first silicon dioxide layer 30 is 62nm.
Specifically in the present embodiment, the first silicon dioxide layer 30 is prepared by magnetron sputtering, and the parameter that magnetron sputtering prepares the first silicon dioxide layer 30 is: background vacuum is 4.8 × 10 -3~ 5.0 × 10 -3pa, the vacuum in plated film chamber is 2.3 × 10 -3~ 2.6 × 10 -3pa, power is 10 ~ 12Kw, and carrier gas is the mist of nitrogen and oxygen, and the flow proportional of nitrogen and oxygen is 8:1.
The material of the one one silicon nitride layer 40 is a silicon nitride (SiN).The refractive index of SiN is 2.0.Adopt SiN as the material of the one one silicon nitride layer 40, make the transmitance of the one one silicon nitride layer 40 lower relative to the first silicon dioxide layer 30.
The thickness of the one one silicon nitride layer 40 is 35nm ~ 40nm.Preferably, the thickness of the one one silicon nitride layer 40 is 38nm.
Specifically in the present embodiment, the one one silicon nitride layer 40 is prepared by magnetron sputtering, and the parameter that magnetron sputtering prepares the one one silicon nitride layer 40 is: background vacuum is 4.8 × 10 -3~ 5.0 × 10 -3pa, the vacuum in plated film chamber is 2.3 × 10 -3~ 2.6 × 10 -3pa, power is 5 ~ 6Kw, and carrier gas is the mist of nitrogen and oxygen, and the flow proportional of nitrogen and oxygen is 9:1.
The material of the second silicon dioxide layer 50 is SiO 2.SiO 2refractive index be 1.48.Adopt SiO 2as the material of the second silicon dioxide layer 50, make the transmitance of the second silicon dioxide layer 50 relatively high.
The thickness of the second silicon dioxide layer 50 is 90nm ~ 105nm.Preferably, the thickness of the second silicon dioxide layer 50 is 102nm.
Specifically in the present embodiment, the second silicon dioxide layer 50 is prepared by magnetron sputtering, and the parameter that magnetron sputtering prepares the second silicon dioxide layer 50 is: background vacuum is 4.8 × 10 -3~ 5.0 × 10 -3pa, the vacuum in plated film chamber is 2.3 × 10 -3~ 2.6 × 10 -3pa, power is 18 ~ 23Kw.
The material of the 21 silicon nitride layer 60 is SiN.The refractive index of SiN is 2.0.Adopt SiN as the material of the 21 silicon nitride layer 60, make the transmitance of the 21 silicon nitride layer 60 relatively low.
The thickness of the 21 silicon nitride layer 60 is 5nm ~ 10nm.Preferably, the thickness of the 21 silicon nitride layer 60 is 5nm.
Specifically in the present embodiment, the 21 silicon nitride layer 60 is prepared by magnetron sputtering, and the parameter that magnetron sputtering prepares the 21 silicon nitride layer 60 is: background vacuum is 4.8 × 10 -3~ 5.0 × 10 -3pa, the vacuum in plated film chamber is 2.3 × 10 -3~ 2.6 × 10 -3pa, power is 2 ~ 3Kw, and carrier gas is the mist of nitrogen and oxygen, and the flow proportional of nitrogen and oxygen is 100% nitrogen.
It should be noted that, silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60 is not limited to the method preparation adopting magnetron sputtering, also can adopt other film plating process commonly used in the industry such as ion beam deposition and evaporation.
Preparation method's technique of above-mentioned antireflective coating 100 is comparatively simple, all uses silicon target during plated film, and technique is simple on the one hand, avoids the situation that multiple target disturbs mutually on the other hand, therefore the color of rete and uniformity all better.
Refer to Fig. 2, the anti reflection glass 1000 of an embodiment comprises the first antireflective coating 100, glass substrate 200, first conductive layer 300, first photosensitive layer 400, second conductive layer 500, second photosensitive layer 600 and the second antireflective coating 700 that stack gradually.
The structure of the first antireflective coating 100 as shown in Figure 1, comprises silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60 stacked gradually.Each layer parameter is consistent with description above, does not repeat them here.Silicon nitride layer 20 is formed at a side surface of glass substrate 200.
Glass substrate 200 can select the glass of float glass or other this area routines, and preferred glass substrate 200 is for receiving lime glass.
Preferably, the thickness of glass substrate 200 is 0.52mm ~ 0.56mm.
Preferably, the refractive index of glass substrate 200 is 1.51.
First conductive layer 300 is formed at the side surface of glass substrate 200 away from silicon nitride layer 20.
Preferably, the material of the first conductive layer 300 is ITO.The refractive index of the first conductive layer 300 is 2.3.
Preferably, the thickness of the first conductive layer 300 is 35nm ~ 50nm.
First photosensitive layer 400 is formed at the surface of the first conductive layer 300.
Preferably, the material of the first photosensitive layer 400 is UV photosensitive resin.The refractive index of the first photosensitive layer 400 is 1.42.
Preferably, the thickness of the first photosensitive layer 400 is 1 μm ~ 1.5 μm.
Second conductive layer 500 is formed at the surface of the first photosensitive layer 400.
Preferably, the material of the second conductive layer 500 is ITO.The refractive index of the second conductive layer 500 is 2.3.
Preferably, the thickness of the second conductive layer 500 is 20nm ~ 30nm.
Second photosensitive layer 600 is formed at the surface of the second conductive layer 500.
Preferably, the material of the second photosensitive layer 600 is UV photosensitive resin.The refractive index of the second photosensitive layer 600 is 1.42.
Preferably, the thickness of the second photosensitive layer 600 is 1.0 μm ~ 1.5 μm.
The structure of the second antireflective coating 700 and the structure of the first antireflective coating 100 just the same, as shown in Figure 1, silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60 stacked gradually is comprised.Each layer parameter is consistent with description above, does not repeat them here.Silicon nitride layer 20 is formed at the second photosensitive layer 600 surface.
The antireflective coating of above-mentioned anti reflection glass 1000 comprises silicon nitride layer 20, first silicon dioxide layer the 30, the 1 silicon nitride layer 40, second silicon dioxide layer the 50 and the 21 silicon nitride layer 60, the film layer structure of the suitable thickness that transmitance height combines, make antireflective coating 100 anti-reflective effect better, when being applied to electronic product, under outdoor solar light or indoor high light, light reflectance is 1% ~ 2.5%; Pass through Si 3n 4, SiN and SiO 2combination, make the hardness of antireflective coating 100 better, insulaion resistance is greater than 1G Ω, and insulating properties are better, thus can ensure the insulating properties of electronic product.Reduce highlighting of ITO (2.3) high index of refraction by the collocation of multilayer height low-refraction simultaneously, thus reach the shadow effect that disappears.
Be appreciated that the first antireflective coating 100 can omit, only retain the second antireflective coating 700 and can reach antireflecting effect.First conductive layer 300, first photosensitive layer 400, second conductive layer 500, second photosensitive layer 600 also can omit, and now direct two surfaces at glass substrate 200 form antireflective coating.
Be specific embodiment below.
Embodiment 1
The structure of the antireflective coating of embodiment 1 is Si 3n 4(11nm)/SiO 2(10nm)/SiN (5nm)/SiO 2(105nm)/SiN (5nm).Wherein, "/" presentation layer stack structure, the numerical value representative thickness in bracket, following examples are identical.
The antireflective coating of embodiment 1 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The antireflective coating of embodiment 1, by using spectrophotometric test instrument, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.4%.
Embodiment 2
The structure of the antireflective coating of embodiment 2 is Si 3n 4(10nm)/SiO 2(5nm)/SiN (10nm)/SiO 2(102nm)/SiN (8nm).
The antireflective coating of embodiment 2 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The antireflective coating of embodiment 2, by using spectrophotometric test instrument, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.2%.
Embodiment 3
The structure of the antireflective coating of embodiment 3 is Si 3n 4(10nm)/SiO 2(35nm)/SiN (48nm)/SiO 2(95nm)/SiN (5nm).
The antireflective coating of embodiment 3 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The antireflective coating of embodiment 3, by using spectrophotometric test instrument, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.5%.
Embodiment 4
The structure of the anti reflection glass of embodiment 4 is substrate of glass/ITO (30nm)/OC (1.2 μm)/ITO (40nm)/OC (1.2 μm)/Si 3n 4(12nm)/SiO 2(32nm)/SiN (53nm)/SiO 2(102nm)/SiN (7nm).
The material of the glass substrate of embodiment 4 is soda-lime glass, and thickness is 0.55mm.
The material of the photoresists (OC) of embodiment 4 is UV photosensitive resin.
The anti reflection glass of embodiment 4 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The anti reflection glass of embodiment 4, by using spectrophotometric test instrument, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550 is 1.3%.
Embodiment 5
The structure of the anti reflection glass of embodiment 5 is substrate of glass/ITO (28nm)/OC (1.3 μm)/ITO (38nm)/OC (1.2 μm)/Si 3n 4(13nm)/SiO 2(41nm)/SiN (60nm)/SiO 2(102nm)/SiN (8nm).
The material of the glass substrate of embodiment 5 is aluminosilicate glass, and thickness is 0.55mm.
The material of the photoresists (OC) of embodiment 5 is UV photosensitive resin.
The anti reflection glass of embodiment 5 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The anti reflection glass of embodiment 5, by using spectral photometer, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.31%.
Embodiment 6
The structure of the anti reflection glass of embodiment 6 is SiN (15nm)/SiO 2(42nm)/SiN (62nm)/SiO 2(105nm)/Si 3n 4(8nm)/substrate of glass/ITO (32nm)/OC (1.3 μm)/ITO (23nm)/OC (1.3 μm)/Si 3n 4(10nm)/SiO 2(16nm)/SiN (38nm)/SiO 2(52nm)/SiN (43nm).
The material of the glass substrate of embodiment 6 is high lead glass, and thickness is 0.55mm.
The material of the photoresists (OC) of embodiment 6 is UV photosensitive resin.
The anti reflection glass of embodiment 6 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The anti reflection glass of embodiment 6, by using spectral photometer, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.5%.
Embodiment 7
The structure of the anti reflection glass of embodiment 7 is SiN (12nm)/SiO 2(41nm)/SiN (35nm)/SiO 2(100nm)/Si 3n 4(10nm)/substrate of glass/ITO (36nm)/OC (1.2 μm)/ITO (21nm)/OC (1 μm)/Si 3n 4(12nm)/SiO 2(26nm)/SiN (31nm)/SiO 2(92nm)/SiN (6nm).
The material of the glass substrate of embodiment 7 is aluminosilicate glass, and thickness is 0.55mm.
The material of the photoresists (OC) of embodiment 7 is UV photosensitive resin.
The anti reflection glass of embodiment 7 carries out hardness test by using Mitsubishi's pencil, and result is 8H.
The anti reflection glass of embodiment 7, by using spectral photometer, is tested the light that wave-length coverage is 380-780nm, and the one side reflectivity of test 550nm is 1.2%.
The above embodiment only have expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.

Claims (9)

1. an antireflective coating, is characterized in that, comprises the silicon nitride layer, the first silicon dioxide layer, the one one silicon nitride layer, the second silicon dioxide layer and the 21 silicon nitride layer that stack gradually;
The thickness of described silicon nitride layer is 10nm ~ 15nm;
The thickness of described first silicon dioxide layer is 50nm ~ 65nm;
The thickness of described one one silicon nitride layer is 35nm ~ 45nm;
The thickness of described second silicon dioxide layer is 90nm ~ 105nm;
The thickness of described 21 silicon nitride layer is 5nm ~ 10nm.
2. antireflective coating according to claim 1, is characterized in that, the thickness of described silicon nitride layer is 10nm; The thickness of described first silicon dioxide layer is 62nm; The thickness of described one one silicon nitride layer is 38nm; The thickness of described second silicon dioxide layer is 102nm; The thickness of described 21 silicon nitride layer is 5nm.
3. an anti reflection glass, is characterized in that, comprises glass substrate and is laminated in the antireflective coating as described in any one of claim 1-2 of described glass baseplate surface.
4. anti reflection glass according to claim 3, is characterized in that, described silicon nitride layer is laminated in the surface of described glass substrate.
5. anti reflection glass according to claim 3, is characterized in that, described glass substrate is soda-lime glass, and thickness is 0.5mm ~ 0.56mm.
6. anti reflection glass according to claim 3, it is characterized in that, also comprise and to be formed between described glass substrate and described antireflective coating and the first conductive layer stacked gradually, the first photosensitive layer, the second conductive layer and the second photosensitive layer, described first conductive layer is laminated in described glass baseplate surface, and described silicon nitride is stacked in the surface of described second photosensitive layer.
7. anti reflection glass according to claim 6, is characterized in that, also comprises and is formed at the antireflective coating as described in any one of claim 1-2 of described glass away from a side surface of described first conductive layer.
8. anti reflection glass according to claim 6, is characterized in that, described first conductive layer is ITO layer, and thickness is 35nm ~ 40nm; Described second conductive layer is ITO layer, and thickness is 20nm ~ 23nm.
9. anti reflection glass according to claim 6, is characterized in that, the thickness of described first photosensitive layer is 1.2 μm ~ 1.5 μm; The thickness of described second photosensitive layer is 1.2 μm ~ 1.5 μm.
CN201520112558.9U 2015-02-15 2015-02-15 Antireflection coating and subtract reflection glass Active CN204894653U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520112558.9U CN204894653U (en) 2015-02-15 2015-02-15 Antireflection coating and subtract reflection glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520112558.9U CN204894653U (en) 2015-02-15 2015-02-15 Antireflection coating and subtract reflection glass

Publications (1)

Publication Number Publication Date
CN204894653U true CN204894653U (en) 2015-12-23

Family

ID=54916862

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520112558.9U Active CN204894653U (en) 2015-02-15 2015-02-15 Antireflection coating and subtract reflection glass

Country Status (1)

Country Link
CN (1) CN204894653U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107382090A (en) * 2016-12-30 2017-11-24 深圳市晟砡科技有限公司 Transparent panel
CN108008558A (en) * 2017-11-28 2018-05-08 信利光电股份有限公司 A kind of touch-screen and preparation method thereof
CN108110064A (en) * 2017-12-21 2018-06-01 天津市职业大学 A kind of synergisting method of the poorly efficient antireflective coating of solar cell glass
CN108312655A (en) * 2017-01-16 2018-07-24 旭硝子株式会社 Transparent base with antireflective coating
CN114025545A (en) * 2021-11-22 2022-02-08 Oppo广东移动通信有限公司 Electronic equipment and shell thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107382090A (en) * 2016-12-30 2017-11-24 深圳市晟砡科技有限公司 Transparent panel
CN107417133A (en) * 2016-12-30 2017-12-01 深圳市晟砡科技有限公司 A kind of panel
CN107445490A (en) * 2016-12-30 2017-12-08 深圳市晟砡科技有限公司 Transparent panel
CN107522409A (en) * 2016-12-30 2017-12-29 深圳市晟砡科技有限公司 Transparent panel and its manufacture method and application
CN108312655A (en) * 2017-01-16 2018-07-24 旭硝子株式会社 Transparent base with antireflective coating
CN114734690A (en) * 2017-01-16 2022-07-12 Ａｇｃ株式会社 Transparent substrate with antireflection film
CN114734690B (en) * 2017-01-16 2023-06-09 Ａｇｃ株式会社 Transparent substrate with antireflection film
CN108008558A (en) * 2017-11-28 2018-05-08 信利光电股份有限公司 A kind of touch-screen and preparation method thereof
CN108008558B (en) * 2017-11-28 2019-12-10 信利光电股份有限公司 Touch screen and manufacturing method thereof
CN108110064A (en) * 2017-12-21 2018-06-01 天津市职业大学 A kind of synergisting method of the poorly efficient antireflective coating of solar cell glass
CN108110064B (en) * 2017-12-21 2019-11-08 天津市职业大学 A kind of synergisting method of the inefficient antireflective coating of solar cell glass
CN114025545A (en) * 2021-11-22 2022-02-08 Oppo广东移动通信有限公司 Electronic equipment and shell thereof

Similar Documents

Publication Publication Date Title
CN204894653U (en) Antireflection coating and subtract reflection glass
CN102909918B (en) Two-side coated glass and preparation method thereof
JP2018502803A (en) Glass articles with anti-reflection coating
CN106501882A (en) Scratch-resistant ARC
JP2008201633A (en) Glass sheet with antireflection film and laminated glass for window
CN102922825A (en) Aid-base resistance anti-reflection coated glass
CN104553126A (en) Antireflection glass and preparation method thereof
CN104691040B (en) Antireflective coating, its preparation method and anti reflection glass
WO1991002102A1 (en) Film based on silicon dioxide and production thereof
US7162141B1 (en) Electro-conductive anti-reflection coating
Moghal et al. Development of single layer nanoparticle anti-reflection coating for polymer substrates
WO2014126801A1 (en) Dielectric mirror
CN102555330A (en) Low-radiation coated glass with multiple function layers
CN201266244Y (en) High translucent conductive film series
CN109383083B (en) Antireflection glass and preparation method thereof
CN107206742A (en) Multilayer laminated boards substrate
CN204451390U (en) Anti reflection glass
JP2018501410A (en) Window film and manufacturing method thereof
CN109979975A (en) A kind of OLED display panel and preparation method thereof
US20230232559A1 (en) Ultraviolet light-resistant articles and methods for making the same
CN202782020U (en) Conductive glass
CN103570254B (en) Conductive glass, its preparation method and application
CN108017290A (en) The preparation method of anti reflection glass
CN102963076A (en) Electromagnetic shielding panel, preparation method thereof and display
Niu et al. Spreadability of Ag layer on oxides and high performance of AZO/Ag/AZO sandwiched transparent conductive film

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160127

Address after: 443005 No. 38, Dalian Road, Yichang, Hubei

Patentee after: YICHANG NANBO DISPLAY DEVICES CO., LTD.

Address before: 518000 Guangdong Province, Shenzhen high tech Zone of Nanshan District City, No. three North Road, CSG Electronics Building

Patentee before: Shenzhen Nanbo Welllight Conductive Coating Co., Ltd.