CN204859031U - Be used for strong charged high -voltage pulse generating device of thin granule - Google Patents

Be used for strong charged high -voltage pulse generating device of thin granule Download PDF

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CN204859031U
CN204859031U CN201520514833.XU CN201520514833U CN204859031U CN 204859031 U CN204859031 U CN 204859031U CN 201520514833 U CN201520514833 U CN 201520514833U CN 204859031 U CN204859031 U CN 204859031U
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voltage
voltage pulse
high voltage
generation device
fly
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CN201520514833.XU
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黄逸凡
刘振
闫克平
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

The utility model discloses a be used for strong charged high -voltage pulse generating device of thin granule, including high -pressure major loop and high voltage isolation trigger circuit, the vice limit of transformer is arranged in to the major loop, including current limiting inductance, energy -storage capacitor and multistage semiconductor switch subassembly and freewheeling diode subassembly, high voltage isolation trigger circuit includes optoelectronic isolation unit, amplifying unit and high voltage isolation unit. Compare with traditional high voltage DC, the corona current that high -voltage pulse produced is more than high voltage DC, consequently uses the utility model discloses high -voltage pulse generating device can improve fine particles's lotus electrical efficiency greatly, and then improves its collection efficiency, utilize semiconductor switch to produce low pressure pulse simultaneously with on transformer former limit, produce this kind of method of high -voltage pulse after rethread impulse transformer steps up and compare, the utility model discloses the device only needs conventional alternating current transformer, and is with low costs.

Description

A kind of high voltage pulse generation device charged by force for fine particle
Technical field
The utility model belongs to pulse generation technical field, is specifically related to a kind of high voltage pulse generation device charged by force for fine particle.
Background technology
Electric precipitation is now widely used burned-coal fly ash trapping technique, and its principle is that electrically charged particle directional migration under electric field action reaches the collection plate that gathers dust.Particle is charged can be divided into field charging and diffusional charging two kinds according to its particle size; Fine particle (PM2.5) is based on diffusional charging, and charged efficiency is low, cannot reach capacity charged, therefore collect difficulty in the electric field, and experiment confirms that improving corona current density can increase the charged of fine particle.
At present, the high-voltage power supply that electric precipitation adopts, based on high direct voltage (50-100kV), mainly comprises single phase poaer supply, three phase mains and high frequency electric source.Because deduster is capacitive load, the corona current that high-voltage pulse produces, much larger than high direct voltage, therefore uses high-voltage pulsed source greatly can improve the charged efficiency of fine particle, and then improves its collection efficiency.
Formed for the high-voltage pulse that fine particle is charged and mainly contain two kinds of methods.Method one utilizes semiconductor switch to produce action of low-voltage pulse at transformer primary side, then produce high-voltage pulse after being boosted by pulse transformer, as shown in Fig. 1 (a); The method shortcoming is the unipolarity due to pulse, and high power, high-tension pulse transformer need good insulating, and permeability is high, the magnetic core that magnetic flux is large, and therefore not only cost intensive, manufacture difficulty are large, and pulse transformer easily makes impulse waveform distort.Method two utilizes storage capacitor and multilevel semiconductor switch module to form pulse forming unit, as shown in Fig. 1 (b) at transformer secondary; The advantage of the method is transformer is conventional transformer, and secondary high-voltage alternating charges to storage capacitor after silicon stack rectification.Because multilevel semiconductor switch module is that the series connection of dozens of switch is (for controllable silicon, form the withstand voltage 4500V controllable silicon in serial connection that 90kV high voltage pulse exports needs more than 20), therefore its technical difficulty is mainly synchronous triggering and the high_voltage isolation method of all switches.
Summary of the invention
For the above-mentioned technical problem existing for prior art, the utility model provides a kind of high voltage pulse generation device charged by force for fine particle, its corona current produced is much larger than high direct voltage, therefore use high-voltage pulsed source greatly can improve the charged efficiency of fine particle, and then improve its collection efficiency.
For the high voltage pulse generation device that fine particle is charged by force, comprise high pressure major loop and high_voltage isolation circuits for triggering; Described high pressure major loop is placed in the secondary of transformer, and its high direct voltage utilizing transformer to export is charged to inner storage capacitor; After charging complete, produce by high_voltage isolation circuits for triggering the semiconductor switch that multiple synchronous trigger impulse triggers multiple series connection in high pressure major loop respectively; When all semiconductor switch conducts, storage capacitor carries out pulsed discharge to external loading.
Described high pressure major loop comprises current-limiting inductance, storage capacitor, the semiconductor switching component be composed in series by multiple semiconductor switch, the fly-wheel diode assembly be composed in series by multiple fly-wheel diode and high-pressure coaxial cable and forms; Wherein, the high direct voltage of one end external transformer output of current-limiting inductance, one end of the current-limiting inductance other end and one end of storage capacitor, one end of semiconductor switching component and fly-wheel diode assembly is connected, the other end of semiconductor switching component is connected with the center conductor of the other end of fly-wheel diode assembly and high-pressure coaxial cable one end, the other end of storage capacitor and the outer contact common ground of high-pressure coaxial cable one end, another terminating load of high-pressure coaxial cable.
Described high_voltage isolation circuits for triggering comprise multiple high_voltage isolation trigger element, and described high_voltage isolation trigger element comprises photoelectric isolation module, drive amplification module and high_voltage isolation module; Wherein, after drive amplification module carries out power amplification by the start pulse signal that photoelectric isolation module receives outside sequence timer and provides to it, then through high_voltage isolation module triggered semiconductor switch.
Described high_voltage isolation module can be single-stage isolated, also can be multi-stage isolation; Preferably, high_voltage isolation module adopts two-stage Isolated Pulse Transformer.
When described high voltage pulse generation device is positive polarity High voltage output, the current-limiting inductance other end is connected with the anode of semiconductor switching component and the negative electrode of fly-wheel diode assembly, and the negative electrode of semiconductor switching component is connected with the center conductor of the anode of fly-wheel diode assembly and high-pressure coaxial cable one end; When described high voltage pulse generation device is negative polarity High voltage output, the current-limiting inductance other end is connected with the negative electrode of semiconductor switching component and the anode of fly-wheel diode assembly, and the anode of semiconductor switching component is connected with the center conductor of the negative electrode of fly-wheel diode assembly and high-pressure coaxial cable one end.
Described fly-wheel diode number can be equal with semiconductor switch number or not etc.
Preferably, described semiconductor switch adopts SCR or IGBT.
Preferably, described current-limiting inductance adopts the air core inductor of high pressure resistant wire-wound.
Preferably, described storage capacitor adopts high voltage bearing low electrification to hold.
Preferably, described fly-wheel diode adopts avalanche diode.
The course of work of the utility model high voltage pulse generation device is as follows: the high direct voltage that external transformer exports is charged to storage capacitor by current-limiting inductance, when after charging complete, high_voltage isolation circuits for triggering by a start pulse signal after photoelectric isolation module and drive amplification module are amplified, multiple synchronous trigger pulse triggers semiconductor switching component is produced again through high_voltage isolation module, when all semiconductor switch conducts, storage capacitor carries out pulsed discharge to deduster load.
With Traditional DC high pressure phase ratio, the corona current that high-voltage pulse produces, much larger than high direct voltage, therefore uses the utility model high voltage pulse generation device greatly can improve the charged efficiency of fine particle, and then improves its collection efficiency; Produce action of low-voltage pulse with utilizing semiconductor switch at transformer primary side simultaneously, then compared by the method for generation producing high-voltage pulse after pulse transformer boosting, the utility model device only needs regular alternating current transformer, and cost is low.
Accompanying drawing explanation
Fig. 1 (a) is the existing high voltage pulse generation device structural representation formed based on transformer primary side.
Fig. 1 (b) is the existing high voltage pulse generation device structural representation formed based on transformer secondary.
The high voltage pulse generation device structural representation that Fig. 2 (a) exports for the utility model negative polarity.
The high voltage pulse generation device structural representation that Fig. 2 (b) exports for the utility model positive polarity.
Fig. 3 is the structural representation of high_voltage isolation circuits for triggering.
Fig. 4 is the measured waveform schematic diagram that high_voltage isolation circuits for triggering produce 10 road trigger impulse voltages.
Fig. 5 (a) is for high pressure major loop is with 2k Ω water resistance be load capacitance voltage and load voltage waveform schematic diagram.
The load current waveform schematic diagram that Fig. 5 (b) is load for high pressure major loop with 2k Ω water resistance.
Fig. 6 (a) is for high pressure major loop is with 20k Ω water resistance be load capacitance voltage and load voltage waveform schematic diagram.
The load current waveform schematic diagram that Fig. 6 (b) is load for high pressure major loop with 20k Ω water resistance.
Embodiment
In order to more specifically describe the utility model, below in conjunction with the drawings and the specific embodiments, the technical solution of the utility model is described in detail.
As shown in Figures 2 and 3, the utility model high voltage pulse generation device comprises high pressure major loop and high_voltage isolation circuits for triggering; High pressure major loop comprises current-limiting inductance (1), storage capacitor (2), multilevel semiconductor switch module (3) and fly-wheel diode assembly (4); High_voltage isolation circuits for triggering comprise Phototube Coupling unit (5), amplifying unit (6) and high_voltage isolation unit (7); Wherein:
High direct voltage is charged to storage capacitor (2) by current-limiting inductance (1).When after charging complete, high_voltage isolation circuits for triggering produce multiple synchronous trigger pulse triggers semiconductor switching component (3).High_voltage isolation circuits for triggering after Phototube Coupling unit (5) and amplifying unit (6) amplify, then are input to semiconductor switching component (3) through the high_voltage isolation unit (7) of two-stage by a start pulse signal.When all semiconductor switch conducts, storage capacitor (2) carries out pulsed discharge to deduster load, and the effect of fly-wheel diode assembly (4) is when conduct reverse current under major loop underdamping condition.
During negative polarity High voltage output, as shown in Fig. 2 (a), the negative electrode of semiconductor switching component (3) and the anode of fly-wheel diode assembly (4) are connected with the high-pressure side of storage capacitor (2); The anode of semiconductor switching component (3) and the negative electrode of fly-wheel diode assembly (4) are connected with the center conductor of high-pressure coaxial cable, and outer conductor and the low pressure of storage capacitor (2) of high-pressure coaxial cable are extremely connected and ground connection.
During positive polarity High voltage output, as shown in Fig. 2 (b), the anode of semiconductor switching component (3) and the negative electrode of fly-wheel diode assembly (4) are connected with the high-pressure side of storage capacitor (2); The negative electrode of semiconductor switching component (3) and the anode of fly-wheel diode assembly (4) are connected with the center conductor of high-pressure coaxial cable, and outer conductor and the low pressure of storage capacitor (2) of high-pressure coaxial cable are extremely connected and ground connection.
In present embodiment, in major loop, current-limiting inductance (1) adopts the air core inductor of high pressure resistant wire-wound, and inductance value is 50 μ H; Storage capacitor (2) adopts withstand voltage 80kV, 1 μ F electric capacity; Semiconductor switching component (3) adopts 10 2 inches of SCR switches in series; Fly-wheel diode assembly (4) adopts 10 2 inches of avalanche diode in series.Adopt negative polarity High voltage output, the negative electrode of semiconductor switching component (3) and the anode of fly-wheel diode assembly (4) are connected with the high-pressure side of storage capacitor (2); The anode of semiconductor switching component (3) and the negative electrode of fly-wheel diode assembly (4) are connected with the center conductor of high-pressure coaxial cable, and outer conductor and the low pressure of storage capacitor (2) of high-pressure coaxial cable are extremely connected and ground connection.
As shown in Figure 3, high_voltage isolation circuits for triggering have 10 tunnels and export, the Phototube Coupling unit (5) on each road is made up of P521 optocoupler and current-limiting resistance, and optocoupler input anode connects 5V source of stable pressure by current-limiting resistance, and negative electrode connects the output of sequence timer; Amplifying unit (6) is made up of BC639 triode, current-limiting resistance etc.; High_voltage isolation unit (7) adopts two-stage Isolated Pulse Transformer, first order isolating transformer is withstand voltage 10kV, no-load voltage ratio 1:1, second level isolating transformer is withstand voltage 90kV, and no-load voltage ratio is 2:1.
The measured result of high_voltage isolation circuits for triggering as shown in Figure 4,10 road trigger impulses have extraordinary leading edge synchronization, the difference of trigger pulse width and amplitude is mainly determined by the BC639 triode turn-on characteristics of amplifying unit (6), little to the triggering impact of SCR switch.Major loop is with two kinds of water resistances for load (2k Ω and 20k Ω), and the waveform of load voltage, capacitance voltage and load current as shown in Figure 5 and Figure 6.For 2k Ω load, charging voltage is-10kV, and voltage pulse output peak value is-10kV, output pulse current peak is 4A, pulse duration (half-peak breadth) at 0.15ms, much smaller than Voltage Pulse Width (half-peak breadth) 2.5ms, and load is larger, pulse is wider.
Above-mentioned is can understand for ease of those skilled in the art and apply the utility model to the description of embodiment.Person skilled in the art obviously easily can make various amendment to above-described embodiment, and General Principle described herein is applied in other embodiments and need not through performing creative labour.Therefore, the utility model is not limited to above-described embodiment, and those skilled in the art are according to announcement of the present utility model, and the improvement made for the utility model and amendment all should within protection ranges of the present utility model.

Claims (9)

1., for the high voltage pulse generation device that fine particle is charged by force, comprise high pressure major loop and high_voltage isolation circuits for triggering; It is characterized in that: described high pressure major loop is placed in the secondary of transformer, and its high direct voltage utilizing transformer to export is charged to inner storage capacitor; After charging complete, produce by high_voltage isolation circuits for triggering the semiconductor switch that multiple synchronous trigger impulse triggers multiple series connection in high pressure major loop respectively; When all semiconductor switch conducts, storage capacitor carries out pulsed discharge to external loading.
2. high voltage pulse generation device according to claim 1, is characterized in that: described high pressure major loop comprises current-limiting inductance, storage capacitor, the semiconductor switching component be composed in series by multiple semiconductor switch, the fly-wheel diode assembly be composed in series by multiple fly-wheel diode and high-pressure coaxial cable and forms; Wherein, the high direct voltage of one end external transformer output of current-limiting inductance, one end of the current-limiting inductance other end and one end of storage capacitor, one end of semiconductor switching component and fly-wheel diode assembly is connected, the other end of semiconductor switching component is connected with the center conductor of the other end of fly-wheel diode assembly and high-pressure coaxial cable one end, the other end of storage capacitor and the outer contact common ground of high-pressure coaxial cable one end, another terminating load of high-pressure coaxial cable.
3. high voltage pulse generation device according to claim 1, it is characterized in that: described high_voltage isolation circuits for triggering comprise multiple high_voltage isolation trigger element, described high_voltage isolation trigger element comprises photoelectric isolation module, drive amplification module and high_voltage isolation module; Wherein, after drive amplification module carries out power amplification by the start pulse signal that photoelectric isolation module receives outside sequence timer and provides to it, then through high_voltage isolation module triggered semiconductor switch.
4. high voltage pulse generation device according to claim 3, is characterized in that: described high_voltage isolation module adopts two-stage Isolated Pulse Transformer.
5. high voltage pulse generation device according to claim 2, it is characterized in that: when described high voltage pulse generation device is positive polarity High voltage output, the current-limiting inductance other end is connected with the anode of semiconductor switching component and the negative electrode of fly-wheel diode assembly, and the negative electrode of semiconductor switching component is connected with the center conductor of the anode of fly-wheel diode assembly and high-pressure coaxial cable one end; When described high voltage pulse generation device is negative polarity High voltage output, the current-limiting inductance other end is connected with the negative electrode of semiconductor switching component and the anode of fly-wheel diode assembly, and the anode of semiconductor switching component is connected with the center conductor of the negative electrode of fly-wheel diode assembly and high-pressure coaxial cable one end.
6. high voltage pulse generation device according to claim 1 and 2, is characterized in that: described semiconductor switch adopts SCR or IGBT.
7. high voltage pulse generation device according to claim 2, is characterized in that: described current-limiting inductance adopts the air core inductor of high pressure resistant wire-wound.
8. high voltage pulse generation device according to claim 1 and 2, is characterized in that: described storage capacitor adopts high voltage bearing low electrification to hold.
9. high voltage pulse generation device according to claim 2, is characterized in that: described fly-wheel diode adopts avalanche diode.
CN201520514833.XU 2015-07-15 2015-07-15 Be used for strong charged high -voltage pulse generating device of thin granule Expired - Fee Related CN204859031U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105024584A (en) * 2015-07-15 2015-11-04 浙江大学 High-voltage pulse generation device for strong charging of fine particles
CN109525139A (en) * 2018-12-21 2019-03-26 上海激光电源设备有限责任公司 A kind of Microsecond grade pulse power

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105024584A (en) * 2015-07-15 2015-11-04 浙江大学 High-voltage pulse generation device for strong charging of fine particles
CN109525139A (en) * 2018-12-21 2019-03-26 上海激光电源设备有限责任公司 A kind of Microsecond grade pulse power

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Granted publication date: 20151209