CN204831655U - 可改善工作性能的单晶硅压力传感器芯片 - Google Patents
可改善工作性能的单晶硅压力传感器芯片 Download PDFInfo
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- CN204831655U CN204831655U CN201520521299.5U CN201520521299U CN204831655U CN 204831655 U CN204831655 U CN 204831655U CN 201520521299 U CN201520521299 U CN 201520521299U CN 204831655 U CN204831655 U CN 204831655U
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- dependent resistor
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 58
- 230000003245 working effect Effects 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 241000826860 Trapezium Species 0.000 claims abstract description 7
- 230000001419 dependent effect Effects 0.000 claims description 63
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 230000001174 ascending effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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CN201520521299.5U CN204831655U (zh) | 2015-07-19 | 2015-07-19 | 可改善工作性能的单晶硅压力传感器芯片 |
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CN204831655U true CN204831655U (zh) | 2015-12-02 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105004457A (zh) * | 2015-07-19 | 2015-10-28 | 江苏德尔森传感器科技有限公司 | 可改善工作性能的单晶硅压力传感器芯片 |
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- 2015-07-19 CN CN201520521299.5U patent/CN204831655U/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105004457A (zh) * | 2015-07-19 | 2015-10-28 | 江苏德尔森传感器科技有限公司 | 可改善工作性能的单晶硅压力传感器芯片 |
CN105004457B (zh) * | 2015-07-19 | 2017-10-13 | 重庆德尔森传感器技术有限公司 | 可改善工作性能的单晶硅压力传感器芯片 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160222 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Patentee after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Patentee before: JIANGSU DERSON SENSOR TECHNOLOGY CO.,LTD. |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160318 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Patentee after: Chongqing Adelson Sensor Technology Co.,Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Patentee before: Mou Heng |
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TR01 | Transfer of patent right |
Effective date of registration: 20210422 Address after: 210000 Zhongguancun Software Park, 7 Yingcui Road, Jiangjun Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province Patentee after: JIANGSU DER SENSOR HOLDINGS Ltd. Address before: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Patentee before: Chongqing Adelson Sensor Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 |