CN204809223U - Image sensor packaging structure - Google Patents
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- CN204809223U CN204809223U CN201520324114.1U CN201520324114U CN204809223U CN 204809223 U CN204809223 U CN 204809223U CN 201520324114 U CN201520324114 U CN 201520324114U CN 204809223 U CN204809223 U CN 204809223U
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Abstract
The utility model provides an image sensor packaging structure, includes: image sensor has the function face and the back, function mask thoughts light zone territory and non - sense light zone territory, pixel has on the sense light zone territory, hollow wall, with function face fixed connection, hollow wall has the through -hole, feel light zone territory quilt the through -hole exposes, function face involution one of them port of through -hole, the transparency carrier has relative first surface and second surface, the second surface involution another port of through -hole, the nanometer line is located one of them surface of first surface and second surface perhaps is located the film, just the film is located one of them surface of first surface and second surface. Image sensor packaging structure can have the image of 3D information through polaroid acquisition.
Description
Technical field
The utility model relates to field of image sensors, particularly relates to a kind of image sensor package structure.
Background technology
People are always obtained by vision, the sense of hearing, sense of touch and the sense of taste etc. the perception of surrounding environment, and simulation reconstruction goes out these sensations when participating in the cintest realistically, is one of important subject of modern science and technology.By stereophonic sound system, people acoustically can experience on-the-spot sensation, and sterophonic technique has developed into higher technical merit at present.And 3D (three-dimensional/three-dimensional) vision technique, also need technological break-through.3D vision technique comprises 3D rendering and 3D video.
3D imaging is formed by sight equation in essence, namely sees different images by right and left eyes, reappears in human brain, and then realize the sensation of 3D.As shown in Figure 1,10 is display screens, and 01 and 02 is the eyes of people, 11 be perceived go out stereopsis.
Generally speaking, 3D imaging is realized by aberration formula, polarization type and active-shutter.Aberration formula is that color of image right and left eyes being seen by red blue filter coating is not used for realizing 3D imaging effect; Polarization type is that the direction of propagation difference of the image light that right and left eyes is seen is to realize 3D imaging effect by horizontal longitudinal polarizer; Active-shutter sees that the time difference of image realizes 3D imaging effect by controlling right and left eyes.
3D rendering can be divided into by viewing tool type and visually observe two types.The 3D rendering of polarization type, red green colour filter 3D rendering etc. is had, owing to being limited by viewing tool, so practical application is also not too convenient by viewing tool.Be applicable to macroscopic 3D rendering and have Lenticular screen image, microlens array image and hologram image.Lenticular screen image and microlens array image, adopt and cover one deck optical lens film on the pattern being printed with various visual angles information, the light realizing each Viewing-angle information is spatially separated, form 3D observing effect, but be limited by the size (hundreds of micron dimension) of optical texture, so image is coarse, manufacturing cost is also higher.
Laser holography also can realize 3D figure, and traditional hologram image technology obtains after laser appearance from the sixties in 20th century and develops rapidly, and simultaneously its Basic Mechanism utilizes optical interference method to record object light wave amplitude and phase place.Light wave due to holographic reconstructed image remains whole amplitude of original Object light wave and the information of phase place, reproduction image and the original have identical 3D characteristic, it is a kind of real 3D rendering, the microstructure of hologram image is small submicrometer structure, there is the characteristic of diffraction light, so hologram image is a kind of without ink image, color solid information can be presented, mould pressing technology can realize the batch duplicating of this image, thus achieving low manufacturing cost, the hologram image of plane successfully achieves the business application of mass.But, because traditional 3D hologram image mastering process step is many and complicated, production environment condition is harsh, limit the application of this stereo-picture, the case of commercial applications is very few, by the digitlization of this Three-dimensional holographic technology, avoid some uppity factors, this image can be made under industrialized condition, is the inevitable requirement of this image development, also will produce huge commercial value.
Crystal wafer chip dimension encapsulation (WaferLevelChipSizePackaging, WLCSP) technology is that after carrying out packaging and testing to full wafer wafer, cutting obtains the technology of single finished product chip again, the chip size after encapsulation and nude film completely the same.Crystal wafer chip dimension encapsulation technology has thoroughly overturned the pattern of conventional package as ceramic leadless chip carrier (CeramicLeadlessChipCarrier), organic leadless chip carrier (OrganicLeadlessChipCarrier) and digital-code camera module formula, has complied with that market is day by day light, little, short to microelectronic product, thinning and low priceization requirement.Chip size after the encapsulation of crystal wafer chip dimension encapsulation technology reaches highly microminiaturized, and chip cost significantly reduces along with the reduction of chip size and the increase of wafer size.Crystal wafer chip dimension encapsulation technology be IC can be designed, technology that wafer manufacture, packaging and testing, Substrate manufacture integrate, be the focus in current encapsulation field and the trend of future development.
Three-dimensional imaging refers to the three-dimensional a kind of formation method of performance scenery.Usually by the image of production two width different points of view, respectively watched by corresponding eyes, with Boris DVE.Shooting instrument has standard type stereocamera, also has and assemble stereoscopic adapter on single-lens camera.Ordinary camera uses the method moved left and right also can take.The image that three-dimensional imaging obtains is follow-up carries out stereo display by corresponding 3D display unit, also can be made into corresponding image in kind.
But in prior art, single image sensor package structure does not possess the function obtaining 3D information.
Utility model content
The problem that the utility model solves is to provide a kind of image sensor package structure, to realize adopting single image sensor package structure namely to obtain the image with 3D information.
For solving the problem, the utility model provides a kind of image sensor package structure, comprising:
Imageing sensor, has functional surfaces and the back side, and described functional surfaces has photosensitive region and non-photo-sensing region, and described photosensitive region has pixel cell;
Cavity wall, is fixedly connected with described functional surfaces, and described cavity wall has through hole, and described photosensitive region is exposed by described through hole, one of them port of through hole described in described functional surfaces involution;
Transparency carrier, has relative first surface and second surface, another port of through hole described in described second surface involution;
Nanometer lines, is positioned at one of them surface of described first surface and second surface, or is positioned at film, and described film is positioned at one of them surface of described first surface and second surface.
Optionally, described nanometer lines comprises multiple first nanometer line group and multiple second nanometer line group, described first nanometer line group has multiple tracks first nanometer line, described second nanometer line group has multiple tracks second nanometer line, described first nanometer line axially extends along first, described second nanometer line axially extends along second, and described first axially axially intersects with described second.
Optionally, described first nanometer line group and described second nanometer line group are arranged in array, and with in a line and in same row, described first nanometer line group and described second nanometer line group be arrangement all alternately.
Optionally, described first surface has the first nanometer lines, described second surface has the second nanometer lines, the described first nanometer line group of described first nanometer lines is just to the described first nanometer line group of described second nanometer lines, and the described second nanometer line group of described first nanometer lines is just to the described second nanometer line group of described second nanometer lines.
Optionally, described first surface has the first film, described second surface has the second film, described the first film has the first nanometer lines, described second film has the second nanometer lines, the described first nanometer line group of described first nanometer lines is just to the described first nanometer line group of described second nanometer lines, and the described second nanometer line group of described first nanometer lines is just to the described second nanometer line group of described second nanometer lines.
Optionally, the area of described first nanometer lines is more than or equal to the area of described second nanometer lines, and the area of described second nanometer lines is more than or equal to the area of described photosensitive region.
Optionally, described nanometer lines comprises multiple nanometer line group, and each nanometer line group comprises multiple nanometer line be parallel to each other, and the nanometer line of different nanometer line group is along axially different extension.
Compared with prior art, the technical solution of the utility model has the following advantages:
In the technical solution of the utility model, because image sensor package structure has the described nanometer lines be positioned on film, nanometer lines comprises multiple nanometer line group, therefore, before extraneous light enters the described pixel cell of imageing sensor, the light in different polarization direction is become by different nanometer line component, then just receive by described pixel cell and transform, now, be equivalent to the Polaroid image just obtaining multiple different angles, and the information of multiple image is distributed in an image by the distribution mode of different nanometer line group is corresponding, thus the image making described pixel cell obtain has 3D information.
Accompanying drawing explanation
Fig. 1 is the 3D image-forming principle schematic diagram of display screen;
Fig. 2 is the image sensor package structural representation that the utility model embodiment provides;
Fig. 3 is film plan structure schematic diagram in the structure of image sensor package shown in Fig. 2;
Fig. 4 to Fig. 8 is the method for packing schematic diagram of the image sensor package structure that the utility model embodiment provides.
Embodiment
As described in background, in prior art, single image sensor package structure does not possess the function obtaining 3D information, and namely single image sensor package structure is Polaroid only can obtain the image with 2D image information.
For this reason, the utility model proposes a kind of image sensor package structure.Imaging effect after general conventional images sensor-packaging structure is common 2D image, the utility model proposes and to form nanometer lines on photosensitive region, image sensor package structure, acted on by " light splitting " of nanometer lines, the pixel cell of image sensor package structure is made to obtain the light of different angles, thus reach the Polaroid object namely obtaining 3D information, namely described image sensor package structure just can obtain the image with 3D information by Polaroid.
For enabling above-mentioned purpose of the present utility model, feature and advantage more become apparent, and are described in detail specific embodiment of the utility model below in conjunction with accompanying drawing.
The utility model embodiment provides a kind of image sensor package structure, incorporated by reference to referring to figs. 2 and 3.
Please refer to Fig. 2, described image sensor package structure comprises imageing sensor 200, and imageing sensor 200 has functional surfaces 200A and back side 200B, and functional surfaces 200A has photosensitive region (mark) and non-photo-sensing region (mark).Display is not distinguished between described photosensitive region and non-photo-sensing region, but photosensitive region has pixel cell (not shown), described pixel cell is manufactured with microlens structure 202, therefore, the functional surfaces 200A region in Fig. 2 corresponding to microlens structure 202 is described photosensitive region.It should be noted that, in the present embodiment, described image sensor package structure can be imageing sensor wafer level chip scale package structure.
In the present embodiment, imageing sensor 200 can be cmos image sensor, wherein, described pixel cell can comprise the structures such as color rete (not shown) and photodiode (not shown), described color rete is positioned on described photodiode, and microlens structure 202 is positioned on color rete.Imageing sensor 200 inside can be formed and the metal-oxide-semiconductor that described photodiode coordinates, floating diffusion region, amplifying circuit and corresponding interconnection structure etc.These semiconductor device and structure are electrically connected with described photodiode on the one hand, process with the photosignal produced photodiode, are electrically connected on the other hand with weld pad 201.The internal circuit configuration of imageing sensor 200 and external projection 205, for subsequently through metal level 203 and welding resisting layer 204, are electrically connected by weld pad 201.
In other embodiment, imageing sensor 200 also can be ccd image sensor.
Please continue to refer to Fig. 2, described image sensor package structure also comprises cavity wall 210, and cavity wall 210 is fixedly connected with functional surfaces 200A.Cavity wall 210 has through hole 211 (incorporated by reference to reference to figure 5 and Fig. 6), and photosensitive region is exposed by through hole 211, one of them port of functional surfaces 200A involution through hole 211.The region that functional surfaces 200A and cavity wall 210 are fixed also is the part in above-mentioned non-photo-sensing region.
In the present embodiment, the material of cavity wall 210 can be ceramic material, organic material, glass material or silicon materials.
Please continue to refer to Fig. 2, described image sensor package structure also comprises transparency carrier 220, and transparency carrier 220 has relative first surface 220A and second surface 220B, another port of second surface 220B involution through hole 211.
In the present embodiment, through hole 211 involution of cavity wall 210 in centre, thus is become cavity 250 by cavity wall 210 involution by transparency carrier 220 and imageing sensor 200, and the sub-translucent structure of pixel cell and top thereof is exposed by cavity 250.
In the present embodiment, transparency carrier 220 can be glass substrate or plastic base.
Please continue to refer to Fig. 2, described image sensor package structure also comprises nanometer lines, and described nanometer lines is positioned on film 240, and film 240 is positioned at the first surface 220A of transparency carrier 220.
In the present embodiment, film 240 is specifically as follows organic film.Described nanometer lines can be produced on film 240 by photoetching or other method.
Please refer to Fig. 3, show the plan structure of film 240.In the present embodiment, described nanometer lines comprises multiple first nanometer line group 241 and multiple second nanometer line group 242, first nanometer line group 241 has multiple tracks first nanometer line 2411, second nanometer line group 242 has multiple tracks second nanometer line 2421, first nanometer line 2411 axially extends along first, second nanometer line 2421 axially extends along second, and first is axially axially vertical with second.Further, in the present embodiment, the first nanometer line group 241 and the second nanometer line group 242 are arranged in array, and with in a line and in same row, the first nanometer line group 241 and the second nanometer line group 242 be arrangement all alternately.
In other embodiment, first also can be axially non-perpendicular mutually to intersect with the second axis.
The wave-length coverage of visible ray is generally 380nm to 780nm, therefore, the width of described first nanometer line and the second nanometer line can relative set be twice, a times, 1/the 2nd and four/first-class width of corresponding visible wavelength, thus the diffraction realized visible ray, ensure that different nanometer line group receives the light of different angles, allow light be converted into the polarization light of different angles in other words.
In the image sensor package structure that the present embodiment provides, owing to having the described nanometer lines be positioned on film, nanometer lines comprises multiple first nanometer line group 241 and multiple second nanometer line group 242, therefore, before extraneous light enters the described pixel cell of imageing sensor 200, the light in different polarization direction is divided into by the first nanometer line group 241 and the second nanometer line group 242, then just receive by described pixel cell and transform, now, be equivalent to the Polaroid image just obtaining two different angles, and the information of two images is distributed in an image by the distribution mode of the first nanometer line group 241 and the second nanometer line group 242 is corresponding, be equivalent to, the image that described pixel cell obtains has 3D information (namely piece image has the information of two different angles images).
After acquisition has the image of 3D information, then after corresponding Graphics Processing, 3D rendering display can be realized.Described Graphics Processing both can be adopt corresponding tridimensional electronic display unit to show, and also can be the 3D rendering display image making of the corresponding 3D of having information being become solid images and realizes.
It should be noted that, in other embodiment, when nanometer lines comprises multiple nanometer line group, before extraneous light enters the described pixel cell of imageing sensor, the light in different polarization direction is become by different nanometer line component, then just receive by described pixel cell and transform, now, be equivalent to the Polaroid image just obtaining multiple different angles, and the information of multiple image is distributed in an image by the distribution mode of different nanometer line group is corresponding, thus the image making described pixel cell obtain has 3D information.
In other embodiment, the film with nanometer lines can be positioned at the second surface 220B of transparency carrier 220, also can be provided with described film on the first surface 220A of transparency carrier 220 and second surface 220B simultaneously, described film all have described nanometer lines.
In other embodiment, nanometer lines directly can be produced on first surface 220A or the second surface 220B of transparency carrier 220, or is directly produced on first surface 220A and the second surface 220B of transparency carrier 220.The area of the first nanometer lines is more than or equal to the area of the second nanometer lines, and the area of the second nanometer lines is more than or equal to the area of photosensitive region.
In other embodiment, first surface 220A has the first nanometer lines, second surface 220B has the second nanometer lines, first nanometer line group of the first nanometer lines is just to the first nanometer line group of the second nanometer lines, and the second nanometer line group of the first nanometer lines is just to the second nanometer line group of the second nanometer lines.
In other embodiment, first surface 220A has the first film, second surface 220B has the second film, the first film has the first nanometer lines, second film has the second nanometer lines, first nanometer line group of the first nanometer lines is just to the first nanometer line group of the second nanometer lines, and the second nanometer line group of the first nanometer lines is just to the second nanometer line group of the second nanometer lines.
When above-mentioned two kinds there is the first nanometer lines and the second nanometer lines, because the first nanometer line group of the first nanometer lines is just to the first nanometer line group of the second nanometer lines, and the second nanometer line group of the first nanometer lines is just to the second nanometer line group of the second nanometer lines, thus, light can arrive described pixel cell by corresponding nanometer line, and, because different light rays is after nanometer line, be recorded in different pixel cells, therefore, the image finally obtained has preferably 3D information.
In other embodiment, when first surface 220A has the first nanometer lines, and second surface 220B is when having the first nanometer lines, the area that can also control the first nanometer lines is more than or equal to the area of the second nanometer lines, and the area of the second nanometer lines is more than or equal to the area of photosensitive region.In this case, can ensure that light that whole described pixel cells receives is all through the first nanometer lines and the second nanometer lines, thus ensure that the whole described pixel cell of the whole image formed comprises complete 3D information.
In other embodiment, nanometer lines comprises multiple nanometer line group, and each nanometer line group comprises multiple nanometer line be parallel to each other, and the nanometer line of different nanometer line group is along axially different extension.In this case, the group number of nanometer line group can be two or more, such as three, more than four or five.When the group number of nanometer line group is three, the piece image adopting this image sensor package structure to collect can have the information of three width different angles images, when the group number of nanometer line group is four, the piece image adopting this image sensor package structure to collect can have the information of four width different angles images, that is, along with, the group number of nanometer line group increases, the 3D information that corresponding piece image can have is abundanter, but because described pixel cell number is normally certain, if the group number of nanometer line group is more, also the reduction of corresponding each angular image amount of information can be caused.
The utility model embodiment also provides a kind of method for packing of image sensor package structure, to form the image sensor package structure that above-described embodiment provides, therefore, incorporated by reference to reference to figure 4 to Fig. 8, and Fig. 2 and Fig. 3.It should be noted that, in the present embodiment, the method for packing of described image sensor package structure can be the method for packing of imageing sensor wafer level chip scale package structure.
Please refer to Fig. 4, provide transparency carrier 220, transparency carrier 220 has relative first surface 220A and second surface 220B.
Please refer to Fig. 5 and Fig. 6, provide cavity wall 210, cavity wall 210 has through hole 211.Wherein, Fig. 5 is the cut-away view of cavity wall 210, and Fig. 6 is the vertical view of cavity wall 210.
In the present embodiment, cavity wall 210 can adopt distinct methods to be formed according to the difference of material, and described through hole 211 together can be formed with the entity part of cavity wall 210, also after formation entity part, can form through hole 211 by methods such as etchings.
Please refer to Fig. 7, wafer is provided, described wafer has multiple image sensor cell 200a, Fig. 7 illustrates two described image sensor cell 200a, neighboring image sensors unit 200a has Cutting Road (not shown) each other, and separate with dotted line between the 200a of image sensor cell described in Fig. 7, the corresponding described Cutting Road position of dotted line position.In Fig. 4 to Fig. 6, and in Fig. 8, each dotted line is also correspond to the described Cutting Road between two adjacent images sensor unit 200a.
In the present embodiment, each image sensor cell 200a has functional surfaces 200A and back side 200B, functional surfaces 200A has photosensitive region and non-photo-sensing region, described photosensitive region has described pixel cell, and more structures and characteristics of image sensor cell 200a can with reference to imageing sensor in previous embodiment 200 corresponding contents.
Please refer to Fig. 8, be fixed on by cavity wall 210 on the functional surfaces 200A of image sensor cell 200a, photosensitive region is exposed by through hole 211, and makes one of them port of functional surfaces 200A involution through hole 211.
In the present embodiment, by method of attaching, cavity wall 210 can be fixed on the functional surfaces 200A of image sensor cell 200a.In other embodiment, by ultrasonic bonding or Reflow Soldering welding, cavity wall 210 can also be fixed on the functional surfaces 200A of image sensor cell 200a.
Please continue with reference to figure 8, transparency carrier 220 is fixed on cavity wall 210, and make another port of second surface 220B involution through hole 211.
In the present embodiment, through hole 211 involution of cavity wall 210 in centre, thus is become cavity 250 by cavity wall 210 involution by transparency carrier 220 and imageing sensor 200, and the sub-translucent structure of pixel cell and top thereof is exposed by cavity 250.
In the present embodiment, transparency carrier 220 can be fixed on cavity wall 210 by method of attaching, such as, both employing ultraviolet cured adhesive is bonding.
Please continue to refer to Fig. 8, first surface 220A arranges film 240, and film 240 forms nanometer lines, be produced on first surface 220A by described nanometer lines.
In the present embodiment, film 240 directly can be fitted on first surface 220A by optical cement.
In the present embodiment, can be able to comprise in the process of the upper making nanometer lines of first surface 220A: film 240 is set on first surface 220A, and photoetching is carried out to film 240, form described nanometer lines.Further, in the present embodiment, the straight write device of mask-free photolithography or nano graph lithographic equipment can be adopted to carry out photoetching to film 240, thus form nanometer lines as shown in Figure 3.
In the present embodiment, nanometer lines on film 240 comprises multiple first nanometer line group 241 and multiple second nanometer line group 242, first nanometer line group 241 has multiple tracks first nanometer line 2411, second nanometer line group 242 has multiple tracks second nanometer line 2421, first nanometer line 2411 axially extends along first, second nanometer line 2421 axially extends along second, and first is axially axially vertical with second.First nanometer line group 241 and the second nanometer line group 242 are arranged in array, and with in a line and in same row, the first nanometer line group 241 and the second nanometer line group 242 be arrangement all alternately.
Please continue to refer to Fig. 8, along Cutting Road cutting crystal wafer and cavity wall 210, the image sensor package structure finally obtained please refer to Fig. 2, and wherein, image sensor cell 200a becomes single imageing sensor 200 after being cut separation, as shown in Figure 2.
It should be noted that, in other embodiment, first can fix described wafer and cavity wall 210, then fixation hollow wall 210 and transparency carrier 220.The permanent order of the utility model to them does not limit.
It should be noted that, described method for packing can also comprise: carry out thinning to described wafer; Described non-photo-sensing region has weld pad 201, forms at described wafer rear 200B the groove that bottom is described weld pad 201; Insulating barrier (not shown) is formed on the surface of described recess sidewall; Full metal is filled or at groove surfaces plated metal, to form metal level 203 (when groove surfaces plated metal, metal level 203 can not fill completely described groove) in described groove; The metal level 203 of described back side 200B forms welding resisting layer 204; External projection 205 is formed at described welding resisting layer 204 outer surface.
In other embodiment, also only can make described nanometer lines at second surface 220B, or nanometer lines can be made on first surface 220A He on second surface 220B simultaneously.And, described nanometer lines can be produced on film, again film is arranged on described first surface 220A or second surface 220B by bonding or other method, also directly can be directly produced on described first surface 220A or second surface 220B by the method for photoetching or etching.
In other embodiment, the first nanometer lines is formed at first surface 220A, the second nanometer lines is formed at second surface 220B, first nanometer line group of the first nanometer lines is just to the first nanometer line group of the second nanometer lines, and the second nanometer line group of the first nanometer lines is just to the second nanometer line group of the second nanometer lines.
In other embodiment, the first film is formed at first surface 220A, the second film is formed at second surface 220B, the first film has the first nanometer lines, second film has the second nanometer lines, first nanometer line group of the first nanometer lines is just to the first nanometer line group of the second nanometer lines, and the second nanometer line group of the first nanometer lines is just to the second nanometer line group of the second nanometer lines.
In other embodiment, when first surface 220A exists the first nanometer lines, and second surface 220B is when existing the second nanometer lines, the area of the first nanometer lines can be made to be more than or equal to the area of the second nanometer lines, and the area of the second nanometer lines is more than or equal to the area of photosensitive region.
In other embodiment, nanometer lines can comprise multiple nanometer line group, and each nanometer line group comprises multiple nanometer line be parallel to each other, and the nanometer line of different nanometer line group is along axially different extension.
The method for packing that the present embodiment provides can form the image sensor package structure that above-described embodiment provides, and described image sensor package structure can have the image of 3D information by Polaroid acquisition.
Although the utility model discloses as above, the utility model is not defined in this.Any those skilled in the art, not departing from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection range of the present utility model should be as the criterion with claim limited range.
Claims (7)
1. an image sensor package structure, is characterized in that, comprising:
Imageing sensor, has functional surfaces and the back side, and described functional surfaces has photosensitive region and non-photo-sensing region, and described photosensitive region has pixel cell;
Cavity wall, is fixedly connected with described functional surfaces, and described cavity wall has through hole, and described photosensitive region is exposed by described through hole, one of them port of through hole described in described functional surfaces involution;
Transparency carrier, has relative first surface and second surface, another port of through hole described in described second surface involution;
Nanometer lines, is positioned at one of them surface of described first surface and second surface, or is positioned at film, and described film is positioned at one of them surface of described first surface and second surface.
2. image sensor package structure as claimed in claim 1, it is characterized in that, described nanometer lines comprises multiple first nanometer line group and multiple second nanometer line group, described first nanometer line group has multiple tracks first nanometer line, described second nanometer line group has multiple tracks second nanometer line, described first nanometer line axially extends along first, and described second nanometer line axially extends along second, and described first axially axially intersects with described second.
3. image sensor package structure as claimed in claim 2, it is characterized in that, described first nanometer line group and described second nanometer line group are arranged in array, and with in a line and in same row, described first nanometer line group and described second nanometer line group be arrangement all alternately.
4. image sensor package structure as claimed in claim 3, it is characterized in that, described first surface has the first nanometer lines, described second surface has the second nanometer lines, the described first nanometer line group of described first nanometer lines is just to the described first nanometer line group of described second nanometer lines, and the described second nanometer line group of described first nanometer lines is just to the described second nanometer line group of described second nanometer lines.
5. image sensor package structure as claimed in claim 3, it is characterized in that, described first surface has the first film, described second surface has the second film, described the first film has the first nanometer lines, described second film has the second nanometer lines, the described first nanometer line group of described first nanometer lines is just to the described first nanometer line group of described second nanometer lines, and the described second nanometer line group of described first nanometer lines is just to the described second nanometer line group of described second nanometer lines.
6. the image sensor package structure as described in claim 4 or 5, is characterized in that, the area of described first nanometer lines is more than or equal to the area of described second nanometer lines, and the area of described second nanometer lines is more than or equal to the area of described photosensitive region.
7. image sensor package structure as claimed in claim 1, it is characterized in that, described nanometer lines comprises multiple nanometer line group, and each nanometer line group comprises multiple nanometer line be parallel to each other, and the nanometer line of different nanometer line group is along axially different extension.
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| CN201520324114.1U CN204809223U (en) | 2015-05-19 | 2015-05-19 | Image sensor packaging structure |
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| CN201520324114.1U CN204809223U (en) | 2015-05-19 | 2015-05-19 | Image sensor packaging structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851899A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Image sensor packaging structure and packaging method thereof |
| CN107301392A (en) * | 2017-06-20 | 2017-10-27 | 华天科技（昆山）电子有限公司 | Wafer level image harvester |
| CN110087005A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | A kind of Color Polarization formula CIS and image processing method, storage medium |
-
2015
- 2015-05-19 CN CN201520324114.1U patent/CN204809223U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851899A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Image sensor packaging structure and packaging method thereof |
| CN104851899B (en) * | 2015-05-19 | 2018-01-19 | 苏州晶方半导体科技股份有限公司 | Image sensor package structure and its method for packing |
| CN107301392A (en) * | 2017-06-20 | 2017-10-27 | 华天科技（昆山）电子有限公司 | Wafer level image harvester |
| CN110087005A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | A kind of Color Polarization formula CIS and image processing method, storage medium |
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